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Effects of postanneal conditions on the dielectric properties of CaCu3Ti4O12 thin films prepared on Pt/Ti/SiO2/Si substrates
NationallizenzAmerican Institute of Physics | 2004| -
Effect of double-sided CaTiO3 buffer layers on the electrical properties of CaCu3Ti4O12 films on Pt/Ti/SiO2/Si substrates
NationallizenzAmerican Institute of Physics | 2006| -
Mechanical and electrical properties of CdTe tetrapods studied by atomic force microscopy
NationallizenzAmerican Institute of Physics | 2007| -
Separation of the Schottky barrier and polarization effects on the photocurrent of Pt sandwiched Pb(Zr0.20Ti0.80)O3 films
NationallizenzAmerican Institute of Physics | 2008| -
Dielectric responses and multirelaxation behaviors of pure and doped CaCu3Ti4O12 ceramics
NationallizenzAmerican Institute of Physics | 2008| -
Pr3+ photoluminescence in ferroelectric (Ba0.77Ca0.23)TiO3 ceramics: Sensitive to polarization and phase transitions
NationallizenzAmerican Institute of Physics | 2008| -
Enhancement of magnetization in Eu doped BiFeO3 nanoparticles
NationallizenzAmerican Institute of Physics | 2009| -
Effects of Eu substituting positions and concentrations on luminescent, dielectric, and magnetic properties of SrTiO3 ceramics
NationallizenzAmerican Institute of Physics | 2009| -
Space charge effect on the photocurrent of Pt-sandwiched Pb(Zr0.20Ti0.80)O3 film capacitors
NationallizenzAmerican Institute of Physics | 2009| -
Effect of oxygen vacancies on the red emission of SrTiO3:Pr3+ phosphor films
NationallizenzAmerican Institute of Physics | 2009| -
Transparent flexible resistive random access memory fabricated at room temperature
NationallizenzAmerican Institute of Physics | 2009| -
Experimental and theoretical evidence of enhanced ferromagnetism in sonochemical synthesized BiFeO3 nanoparticles
NationallizenzAmerican Institute of Physics | 2010| -
Interface effect on the photocurrent: A comparative study on Pt sandwiched (Bi3.7Nd0.3)Ti3O12 and Pb(Zr0.2Ti0.8)O3 films
NationallizenzAmerican Institute of Physics | 2010| -
Interface layer thickness effect on the photocurrent of Pt sandwiched polycrystalline ferroelectric Pb(Zr,Ti)O3 films
NationallizenzAmerican Institute of Physics | 2010| -
Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells
NationallizenzAmerican Institute of Physics | 2010| -
Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device
NationallizenzAmerican Institute of Physics | 2010| -
Erratum: “Transparent flexible resistive random access memory fabricated at room temperature” [Appl. Phys. Lett. 95, 133508 (2009)]
Freier ZugriffAmerican Institute of Physics | 2010| -
Dielectric and nonlinear current–voltage characteristics of rare–earth doped CaCu3Ti4O12 ceramics
NationallizenzAmerican Institute of Physics | 2011| -
Towards a high efficiency amorphous silicon solar cell using molybdenum oxide as a window layer instead of conventional p-type amorphous silicon carbide
NationallizenzAmerican Institute of Physics | 2011| -
Tunable work function of a WOx buffer layer for enhanced photocarrier collection of pin-type amorphous silicon solar cells
NationallizenzAmerican Institute of Physics | 2011|
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