Erscheinungsjahr
Medientyp
Format
Lizenz
Sprache
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Electricity consumption from renewable and non-renewable sources and economic growth: Evidence from Latin American countries
British Library Online Contents | 2014| -
Electrical properties of lightly doped polycrystalline silicon
NationallizenzAmerican Institute of Physics | 1982| -
Temperature Dependence of Electrical Conduction in Pb(Zr,Ti)O~3 Thin Films
British Library Online Contents | 2005| -
Electrical conduction mechanism in high-dielectric-constant (Ba~0~.~5,Sr~0~.~5)TiO~3 thin films
British Library Online Contents | 2002| -
Thickness Dependence of the Time Dependent Dielectric Breakdown Characteristics of Pb(Zr, Ti)O~3 Thin Film Capacitors for Memory Device Applications
British Library Online Contents | 2000| -
Electrical characteristics of metal-ferroelectric (PbZr~xTi~1~-~xO~3)-insulator(Ta~2O~5)-silicon structure for nonvolatile memory applications
British Library Online Contents | 2000| -
Electron trapping process in ferroelectric lead-zirconate-titanate thin-film capacitors
British Library Online Contents | 1998| -
The temperature dependence of the conduction current in Ba~0~.~5Sr~0~.~5TiO~3 thin-film capacitors for memory device applications
British Library Online Contents | 2000| -
The temperature dependence of the transient current in ferroelectric Pb(Zr~xTi~1~-~x)O~3 thin films for memory devices applications
British Library Online Contents | 1997| -
P - 17 "Fabrication and Characterization of Metal-Oxide-Semiconductor Field-Effect Transistors Using HfO~2 Gate Oxide"
British Library Conference Proceedings | 2003| -
Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La~2O~3 gate dielectric (3 pages)
British Library Online Contents | 2006| -
Pd/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing
British Library Online Contents | 1994| -
AlGaAs/GaAs charge injection transistor/negative resistance field-effect transistor fabricated with shallow Pd/Ge ohmic contacts
British Library Online Contents | 1994| -
Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with Dy~2O~3 gate dielectric (3 pages)
British Library Online Contents | 2006| -
Leakage Current Mechanism of Metal-Ta~2O~5-Metal Capacitors for Memory Device Applications
British Library Online Contents | 1999| -
Enhancement of electron transfer and negative differential resistance in GaAs-based real-space transfer devices by using strained InGaAs channel layers
British Library Online Contents | 1994| -
Temperature Dependence of Electrical Conduction in Pb(Zr,Ti)O~3 Thin Films
British Library Conference Proceedings | 2005| -
Redistribution of constituent elements in Pd/Ge contacts to n-type GaAs using rapid thermal annealing
British Library Online Contents | 1994|
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