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Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions
NationallizenzIOP Institute of Physics | 2009| -
A simple microwave photonic notch filter based on a semiconductor optical amplifier
NationallizenzIOP Institute of Physics | 2009| -
Collector optimization for improving the product of the breakdown voltage–cutoff frequency in SiGe HBTProject supported by the National Natural Science Foundation of China (Nos. 60776051, 61006059, 61006044), the Beijing Natural Science Foundation (Nos. 4082007, 4143059, 4142007, 4122014), and the Beijing Municipal Education Committee (Nos. KM200710005015, KM200910005001).
PaperIOP Institute of Physics | 2015| -
A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect
IOP Institute of Physics | 2022| -
Field-effect transistor memories based on ferroelectric polymers Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC–JSPS Bilateral Joint Research Projects (No. 61511140098).
PaperIOP Institute of Physics | 2017| -
Comprehensive,in operando, and correlative investigation of defects and their impact on device performance
IOP Institute of Physics | 2022| -
Properties of polaron in a triangular quantum well induced by the Rashba effect
Semiconductor PhysicsIOP Institute of Physics | 2014| -
An ultra high-speed 8-bit timing interleave folding & interpolating analog-to-digital converter with digital foreground calibration technology
NationallizenzSEMICONDUCTOR INTEGRATED CIRCUITSIOP Institute of Physics | 2011| -
Perylene diimide self-assembly: From electronic structural modulation to photocatalytic applications
PaperIOP Institute of Physics | 2020| -
Tuning two-dimensional electron gas of ferroelectric/GaN heterostructures by ferroelectric polarization
NationallizenzIOP Institute of Physics | 2010| -
Performance and analysis of an ultraviolet C-band light emitting diode with an emission wavelength of 268 nm
IOP Institute of Physics | 2022| -
Annular-aperture diffractive axicons illuminated by Gaussian beams
NationallizenzIOP Institute of Physics | 1999| -
Recent advances and prospects of asymmetric non-fullerene small molecule acceptors for polymer solar cells
IOP Institute of Physics | 2021| -
Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal–oxide–semiconductor capacitorsProject supported by the Advance Research Project of China (No. 5130803XXXX) and the National Natural Science Foundation of China (No. 61176070).
PaperIOP Institute of Physics | 2015| -
A 6.25 Gb/s equalizer in 0.18 μm CMOS technology for high-speed SerDes
NationallizenzSemiconductor Integrated CircuitsIOP Institute of Physics | 2013| -
Reducing vulnerability to soft errors in sub-100 nm content addressable memory circuits
NationallizenzSEMICONDUCTOR INTEGRATED CIRCUITSIOP Institute of Physics | 2010|
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