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Synonyme wurden verwendet für: Galliumnitrid
Suche ohne Synonyme: keywords:("Galliumnitrid")
Verwendete Synonyme:
- cas 25617 97 4
- gallium nitride
- gan
-
0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess
Online Contents | 2016|Schlagwörter: GaN -
0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess
Online Contents | 2016|Schlagwörter: GaN -
1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate
Springer Verlag | 2023|Schlagwörter: p-GaN gate -
3.3: Higher External Quantum Efficiency with Lower Current Density Injection of <10 μm Pixel Size Arrays for Display Application
Wiley | 2023|Schlagwörter: GaN-based Micro-LEDs -
3D building fabrication with geometry and texture coordination via hybrid GAN
Springer Verlag | 2022|Schlagwörter: GAN chain, Hybrid GAN -
3D CVT-GAN: A 3D Convolutional Vision Transformer-GAN for PET Reconstruction
Springer Verlag | 2022|Schlagwörter: Generative adversarial network (GAN) -
3DFaceGAN: Adversarial Nets for 3D Face Representation, Generation, and Translation
Freier ZugriffOnline Contents | 2020|Schlagwörter: GAN -
3DFaceGAN: Adversarial Nets for 3D Face Representation, Generation, and Translation
Freier ZugriffSpringer Verlag | 2020|Schlagwörter: GAN -
3D Fetal Pose Estimation with Adaptive Variance and Conditional Generative Adversarial Network
Springer Verlag | 2020|Schlagwörter: Generative adversarial network (GAN) -
3D Transformer-GAN for High-Quality PET Reconstruction
Springer Verlag | 2021|Schlagwörter: Generative Adversarial Network (GAN) -
3INGAN: Learning a 3D Generative Model from Images of a Self-similar Scene
Freier ZugriffBASE | 2023|Schlagwörter: 3D GAN, single 3D scene GAN -
4.4: Low Efficiency Attenuation and Stable Monochromaticity for Non‐polar M‐plane Micro‐light‐emitting‐diodes (Micro‐LEDs)
Wiley | 2022|Schlagwörter: GaN-based Micro-LEDs -
6‐1: Invited Paper: Status and Future Prospects for Visible‐Spectrum Light‐Emitting Diodes
Wiley | 2016|Schlagwörter: gallium nitride, indium gallium nitride -
9.1: Invited Paper: Materials, Process and Production Equipment Considerations to Achieve High‐Yield MicroLED Mass‐Production
Wiley | 2018|Schlagwörter: GaN -
16.2: Invited Paper: Challenges and solutions for High‐performance GaN MicroLED displays
Wiley | 2019|Schlagwörter: GaN -
17.1: SRAM‐based LED CMOS driver circuit for a 512x512 GaN microdisplay
Wiley | 2023|Schlagwörter: GaN-on-Si -
18‐2: Ultra‐Fine High Efficiency MicroLEDs with Testability and Transferability Using Layer‐Transfer Technology
Wiley | 2019|Schlagwörter: GaN -
18‐3: A New Approach for Fabricating High‐Performance MicroLED Displays
Wiley | 2019|Schlagwörter: GaN -
18‐4: MicroLED Displays based on Transfer with Microtubes Interconnections
Wiley | 2019|Schlagwörter: GaN -
18.5: Size‐dependence Characterization of GaN‐based Green Micro‐LED
Wiley | 2021|Schlagwörter: GaN LED -
19‐6: Invited Paper: A Novel Process for Fabricating High‐Resolution and Very Small Pixel‐pitch GaN LED Microdisplays
Wiley | 2017|Schlagwörter: GaN -
23.3: Invited Paper: Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes
Wiley | 2019|Schlagwörter: InGaN/GaN MQWs -
23‐5: Late‐News Paper: High‐Resolution Monolithic Micro‐LED Full‐color Micro‐display
Wiley | 2020|Schlagwörter: GaN-on-Si -
25‐1: Invited Paper: Achieving high uniformity and yield of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications with precise strain‐engineering
Wiley | 2019|Schlagwörter: GaN-on-Si -
25.2: Invited Paper: Active‐matrix, WVGA GaN Led microdisplay for augmented reality applications
Wiley | 2018|Schlagwörter: GaN -
25.4: Contact Model Analysis of GaN‐based Micro Light Emitting Diodes (Micro‐LEDs) With Distinct Structures and Bonding Pads
Wiley | 2021|Schlagwörter: GaN-based Micro-LEDs -
25‐4: Investigation and Improvement of 10μm Pixel‐pitch GaN‐based Micro‐LED Arrays with Very High Brightness
Wiley | 2017|Schlagwörter: GaN -
29‐2: Invited Paper: Temporal Study of Micro‐LED Arrays for Potential High Efficiency Driving
Wiley | 2023|Schlagwörter: GaN semiconductor -
29‐3: Exploring the Temperature Dependence of GaN‐on‐GaN Homoepitaxy Micro‐LEDs
Wiley | 2023|Schlagwörter: GaN substrate -
29‐4: Higher External Quantum Efficiency with Lower Current Density Injection of <10 μm Pixel Size Arrays for Display Application
Wiley | 2023|Schlagwörter: GaN-based Micro-LEDs -
30‐3: Distinguished Paper: Sub‐Micron Full‐Color LED Pixels for Micro‐Displays and Micro‐LED Main Displays
Wiley | 2020|Schlagwörter: GaN -
31.3: Low Optical Crosstalk Micro‐LED Micro‐Display with Semi‐Sphere Micro‐Lens for Light Collimation
Wiley | 2018|Schlagwörter: GaN, Gallium Nitride -
37‐2: Distinguished Paper: Efficiency Enhancement of Submicron‐size Light‐Emitting Diodes by Triple Dielectric Layers
Wiley | 2023|Schlagwörter: GaN based micro-LEDs -
37‐4: Invited Paper: Towards Small, Ultrahigh‐Definition Micro‐LED Displays Using Monolithic Vertically Stacked RGB LEDs
Wiley | 2023|Schlagwörter: RGB integration: Eu-doped GaN -
38‐2: Latest Breakthroughs in 200 and 300 mm EPI Technology to Unlock the Micro LED Revolution for the Metaverse and Beyond
Wiley | 2022|Schlagwörter: GaN-on-Si -
42‐3: Invited Paper: Requirements for Next Generation Wearable Display and Battery Technologies
Wiley | 2016|Schlagwörter: Gallium Nitride (GaN) -
43‐2: Low Efficiency Attenuation and Stable Monochromaticity for Non‐Polar m‐Plane Micro‐Ligh‐Emitting‐Diodes (Micro‐LEDs)
Wiley | 2022|Schlagwörter: GaN-based Micro-LEDs -
46.2: Invited Paper: High‐resolution GaN microdisplays and solution for full‐color devices for AR/MR applications
Wiley | 2021|Schlagwörter: GaN -
46.3: Invited Paper: Technologies for scaling wafer diameter up to 300 mm to enable high yield and low cost micro LED production
Wiley | 2021|Schlagwörter: GaN-on-Si -
47‐3: Invited Paper: High Brightness and RGB Integration of Eu‐doped GaN‐based Red LEDs for Ultrahigh‐resolution Micro‐LED Display
Wiley | 2020|Schlagwörter: Eu-doped GaN -
53.3: The Size and Temperature Effect of Ideality Factor in GaN/InGaN Multiple Quantum Wells Micro Light Emitting Diodes (Micro‐LEDs)
Wiley | 2021|Schlagwörter: GaN/InGaN multiple quantum wells -
53‐4: The path of 300 mm GaN‐on‐Si epiwafers into silicon semiconductor fabs
Wiley | 2023|Schlagwörter: GaN-on-Si -
55.1: Invited Paper: Achieving high uniformity of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications
Wiley | 2019|Schlagwörter: GaN-on-Si -
59‐4: Invited Paper: Electro‐optical size‐dependence investigation in GaN micro‐LED devices
Wiley | 2018|Schlagwörter: GaN -
60‐2: Contact Model Analysis of GaN‐Based Micro Light‐Emitting Diodes (MicroLEDs) with Distinct Structures and Bonding Pads
Wiley | 2021|Schlagwörter: GaN-based Micro-LEDs -
60‐5: Invited Paper: Display Technology Responds to COVID‐19 Challenges
Wiley | 2021|Schlagwörter: GaN
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