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All-optical switching based on self-assembled halide perovskite microwires
IOP Institute of Physics | 2022| -
Novel CMOS-based multi-band terahertz detector for passive imaging
IOP Institute of Physics | 2022| -
Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode
PaperIOP Institute of Physics | 2021| -
Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination
NationallizenzIOP Institute of Physics | 2010| -
Heteroepitaxial β-Ga2O3 thick films on sapphire substrate by carbothermal reduction rapid growth method
IOP Institute of Physics | 2022| -
Analytical models for the base transit time of a bipolar transistor with double base epilayers
NationallizenzIOP Institute of Physics | 2009| -
A 16-bit 1 MSPS SAR ADC with foreground calibration and residual voltage shift strategy
PaperIOP Institute of Physics | 2020| -
Neutron radiation effect on 4H-SiC MESFETs and SBDs
NationallizenzIOP Institute of Physics | 2010| -
A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technologyProject supported by the National Basic Research Program of China (No. 2010CBxxxx05), the Advance Research Project of China (No. 51308xxxx06), the Advance Research Foundation of China (No. 9140A08xxxx11DZ111), and Doctoral Scientific Research Foundation of Henan University of Science and Technology (No. 400613480011), and the Foundation of He'nan Educational Commettee (No. 15A510001).
PaperIOP Institute of Physics | 2015| -
The fabrication and ultraviolet detecting properties of ZnMgO-based thin film transistor by laser molecular beam epitaxy
NationallizenzIOP Institute of Physics | 2010| -
Fluorine-containing organic ammonium salt-doped inverted inorganic perovskite solar cells
IOP Institute of Physics | 2022| -
High-frequency characterization of high-speed modulators and photodetectors in a link with low-speed photonic sampling
PaperIOP Institute of Physics | 2021| -
Electronic origin of structural degradation in Li-rich transition metal oxides: The case of Li2MnO3 and Li2RuO3
IOP Institute of Physics | 2024| -
High temperature characterization of double base epilayer 4H-SiC BJTs
NationallizenzIOP Institute of Physics | 2010| -
First-principles calculation on the concentration of intrinsic defects in 4H-SiC
NationallizenzSEMICONDUCTOR MATERIALSIOP Institute of Physics | 2013| -
A unipolar nano-diode detector with improved performance using the high-k material SiNx
PaperIOP Institute of Physics | 2018|
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