Erscheinungsjahr
Medientyp
Datenquelle
Format
Sprache
-
Effect of the dispersion on multipartite continuous-variable entanglement in optical parametric amplifierProject supported by the State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, China (Grant No. KF201401) and the National Natural Science Foundation of China (Grant No. 11404084).
PaperIOP Institute of Physics | 2015| -
Einstein—Podolsky—Rosen entanglement in time-dependent broadband pumping frequency non-degenerate optical parametric amplifier
NationallizenzGENERALIOP Institute of Physics | 2011| -
Einstein–Podolsky–Rosen entanglement in time-dependent periodic pumping non-degenerate optical parametric amplifier
NationallizenzIOP Institute of Physics | 2009| -
The solution of the time-dependent Fokker–Planck equation of non-degenerate optical parametric amplification and its application to the optimum realization of EPR paradox
NationallizenzIOP Institute of Physics | 2007| -
The high squeezing and entanglement in regular loss modulated optical parametric amplifier
NationallizenzIOP Institute of Physics | 2010| -
The propagation characteristic of the EPR entanglement for a composite non-degenerate parametric optical amplification system
NationallizenzIOP Institute of Physics | 2010| -
Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methodsProject supported by the “National S&T Major Project 02”, the Opening Project of Microelectronics Devices & Bulk Si FinFET Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (No. 2013ZX02303007-001).
PaperIOP Institute of Physics | 2015| -
Hysteresis analysis of graphene transistor under repeated test and gate voltage stress
Semiconductor DevicesIOP Institute of Physics | 2014| -
Microwave Doppler spectra of sea return at small incidence angles: specular point scattering contribution
NationallizenzCLASSICAL AREAS OF PHENOMENOLOGYIOP Institute of Physics | 2010| -
Influence of pumping laser bandwidth on the quantum fluctuation chracteristic of a non-degenerate optical parametric amplifier
NationallizenzGENERALIOP Institute of Physics | 2012| -
Design of two-terminal PNPN diode for high-density and high-speed memory applications
SEMICONDUCTOR DEVICESIOP Institute of Physics | 2014| -
Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
PaperIOP Institute of Physics | 2015| -
Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers
IOP Institute of Physics | 2022| -
An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness
Semiconductor TechnologyIOP Institute of Physics | 2014| -
The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks
Semiconductor TechnologyIOP Institute of Physics | 2014| -
Simulations of backgate sandwich nanowire MOSFETs with improved device performance
Semiconductor DevicesIOP Institute of Physics | 2014| -
On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX
Semiconductor DevicesIOP Institute of Physics | 2014| -
Development of in situ characterization techniques in molecular beam epitaxy
IOP Institute of Physics | 2024| -
Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis
IOP Institute of Physics | 2022| -
Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacksProject supported by the National High Technology Research and Development Program (863 Program) of China (No. SS2015AA010601), the National Natural Science Foundation of China (Nos. 61176091, 61306129), and the Opening Project of the Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.
PaperIOP Institute of Physics | 2016| -
A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process
NationallizenzIOP Institute of Physics | 2013| -
Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process
Semiconductor DevicesIOP Institute of Physics | 2015| -
Energy distribution extraction of negative charges responsible for positive bias temperature instabilityProject supported by the National Science & Technology Major Projects of the Ministry of Science and Technology of China (Grant No. 2009ZX02035) and the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129).
PaperIOP Institute of Physics | 2015| -
Scale-out production of extracellular vesicles derived from natural killer cells via mechanical stimulation in a seesaw-motion bioreactor for cancer therapy
Freier ZugriffIOP Institute of Physics | 2022| -
Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last processProject supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601) and the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129).
PaperIOP Institute of Physics | 2015| -
Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last processProject supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601) and the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129).
PaperIOP Institute of Physics | 2015| -
Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process
NationallizenzIOP Institute of Physics | 2013| -
Device parameter optimization for sub-20 nm node HK/MG-last bulk FinFETsProject supported by the National 02 IC Projects and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.
PaperIOP Institute of Physics | 2015| -
Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM
IOP Institute of Physics | 2023|
- ««
- «
- 1
- »»
Meine Suche schicken an (beta)
Schicken Sie ihre Suchanfrage (Suchterm ohne Filter) an andere Datenbanken, Portale und Kataloge, um ggf. weitere interessante Treffer zu finden:
Dimensions ist eine Datenbank für Abstracts und Zitate, die Informationen zu Forschungsförderungen mit daraus resultierenden Veröffentlichungen, Studien und Patenten verknüpft.
Im TIB AV-Portal können audiovisuelle Medien aus Wissenschaft und Lehre recherchiert und eigene wissenschaftliche Videos publiziert werden.
Im FID move kann nach fachspezifischer Literatur, Forschungsdaten und weitere Informationen aus der Mobilitäts- und Verkehrsforschung gesucht werden.
Der Open Research Knowledge Graph liefert strukturiert beschriebene Forschungsinhalte und macht diese vergleichbar.
Frei zugänglicher Ausschnitt der Verbunddatenbank K10plus des GBV und des SWB mit für die Fernleihe und Direktlieferdienste relevanten Materialien.