IEEE Transactions on Electron Devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 4558
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Editorial Special Section on ESSDERCAndrieu, Francois / Ghione, Giovanni et al. | 2020
- 4559
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Generalized Constant Current Method for Determining MOSFET Threshold VoltageBucher, Matthias / Makris, Nikolaos / Chevas, Loukas et al. | 2020
- 4563
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Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic ApplicationsCardoso Paz, Bruna / Casse, Mikael / Theodorou, Christoforos et al. | 2020
- 4568
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A Method for Series-Resistance-Immune Extraction of Low-Frequency Noise Parameters in Nanoscale MOSFETsTataridou, Angeliki / Ghibaudo, Gerard / Theodorou, Christoforos et al. | 2020
- 4573
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Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETsChen, Wangyong / Cai, Linlin / Liu, Xiaoyan et al. | 2020
- 4578
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Polarization Independent Band Gaps in CMOS Back-End-of-Line for Monolithic High-Q MEMS Resonator ConfinementHudeczek, Richard / Baumgartner, Peter et al. | 2020
- 4582
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Out-of-Equilibrium Body Potential Measurement on Silicon-on-Insulator With Deposited Metal ContactsAlepidis, Miltiadis / Bouchard, Aude / Delacour, Cecile et al. | 2020
- 4587
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Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator ComponentsOttaviani, A. / Palacios, P. / Zweipfennig, T. et al. | 2020
- 4592
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Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTsElKashlan, R. Y. / Rodriguez, R. / Yadav, S. et al. | 2020
- 4597
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Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTsZagni, Nicolo / Puglisi, Francesco Maria / Verzellesi, Giovanni et al. | 2020
- 4602
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Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC StressMinetto, Andrea / Deutschmann, Bernd / Modolo, Nicola et al. | 2020
- 4606
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Vertically Replaceable Memory Block Architecture for Stacked DRAM Systems by Wafer-on-Wafer (WOW) TechnologySugatani, Shinji / Chujo, Norio / Sakui, Koji et al. | 2020
- 4611
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Reliability of Logic-in-Memory Circuits in Resistive Memory ArraysZanotti, Tommaso / Zambelli, Cristian / Puglisi, Francesco Maria et al. | 2020
- 4616
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IGZO-Based Compute Cell for Analog In-Memory Computing—DTCO Analysis to Enable Ultralow-Power AI at EdgeSaito, D. / Doevenspeck, J. / Cosemans, S. et al. | 2020
- 4621
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Array-Level Programming of 3-Bit per Cell Resistive Memory and Its Application for Deep Neural Network InferenceLuo, Yandong / Han, Xu / Ye, Zhilu et al. | 2020
- 4626
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Ultrahigh-Density 3-D Vertical RRAM With Stacked Junctionless Nanowires for In-Memory-Computing ApplicationsEzzadeen, M. / Bosch, D. / Giraud, B. et al. | 2020
- 4631
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Thermal Stress-Aware CMOS–SRAM Partitioning in Sequential 3-D TechnologySalahuddin, Shairfe Muhammad / Litta, Eugenio Dentoni / Gupta, Anshul et al. | 2020
- 4636
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Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and TransconductanceCasse, M. / Paz, B. Cardoso / Ghibaudo, G. et al. | 2020
- 4641
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Enhanced Ultraviolet Avalanche Photodiode With 640-nm-Thin Silicon Body Based on SOI TechnologyAlirezaei, Iman Sabri / Andre, Nicolas / Flandre, Denis et al. | 2020
- 4645
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TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC PassivationBalestra, L. / Reggiani, S. / Gnudi, A. et al. | 2020
- 4649
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Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential MethodKammeugne, R. Kom / Leroux, C. / Cluzel, J. et al. | 2020
- 4654
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Influence of Substrate Resistivity on Porous Silicon Small-Signal RF PropertiesGodet, Geoffroy / Augendre, Emmanuel / Lugo-Alvarez, Jose et al. | 2020
- 4658
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Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETsMakris, Nikolaos / Bucher, Matthias / Chevas, Loukas et al. | 2020
- 4662
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Local Variability Evaluation on Effective Channel Length Extracted With Shift-and-Ratio MethodBrito, Juan Pablo Martinez / Bampi, Sergio et al. | 2020
- 4667
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Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors Due to Carrier-Number and Correlated- Mobility FluctuationNikolaou, Aristeidis / Darbandy, Ghader / Leise, Jakob et al. | 2020
- 4672
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Macromodel for AC and Transient Simulations of Organic Thin-Film Transistor Circuits Including Nonquasistatic EffectsLeise, Jakob / Pruefer, Jakob / Nikolaou, Aristeidis et al. | 2020
- 4677
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Compact Modeling and Behavioral Simulation of an Optomechanical Sensor in Verilog ADawale, Houssein Elmi / Sibeud, Loic / Regord, Sebastien et al. | 2020
- 4682
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TCAD Simulation Framework of Gas Desorption in CNT FET NO2 SensorsCarapezzi, Stefania / Reggiani, Susanna / Gnani, Elena et al. | 2020
- 4687
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Conductance in a Nanoribbon of Topologically Insulating MoS2 in the 1T’ PhaseSverdlov, Viktor / El-Sayed, Al-Moatasem Bellah / Kosina, Hans et al. | 2020
- 4691
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Vₜ Extraction Methodologies Influence Process Induced Vₜ Variability: Does This Fact Still Hold for Advanced Technology Nodes?Bhoir, Mandar S. / Chiarella, Thomas / Mitard, Jerome et al. | 2020
- 4696
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Multidomain Negative Capacitance Effect in P(VDF-TrFE) Ferroelectric Capacitor and Passive Voltage AmplificationSingh, Khoirom Johnson / Bulusu, Anand / Dasgupta, Sudeb et al. | 2020
- 4701
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Monte Carlo Comparison of n-Type and p-Type Nanosheets With FinFETs: Effect of the Number of SheetsBufler, F. M. / Jang, D. / Hellings, G. et al. | 2020
- 4705
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Impact of Width Scaling and Parasitic Series Resistance on the Performance of Silicene Nanoribbon MOSFETsPoljak, Mirko et al. | 2020
- 4709
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Improved Design of a Thermophotovoltaic DeviceLiao, Tianjun / Zhang, Houcheng / Wang, Zhi-Yong et al. | 2020
- 4713
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Impact of Dummy Gate Removal and a Silicon Cap on the Low-Frequency Noise Performance of Germanium nFinFETsXie, Duan / Simoen, Eddy / Chen, Haifeng et al. | 2020
- 4720
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Impact of Channel Hot-Hole Stressing on Gate-Oxide Trap’s EmissionJu, Xin / Ang, Diing Shenp / Gu, Chenjie et al. | 2020
- 4728
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Device, Circuit, and Reliability Assessment of Drain-Extended FinFETs for Sub-14 nm System on Chip ApplicationsKumar, B. Sampath / Ajay / Paul, Milova et al. | 2020
- 4736
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Controlling the Effective Channel Thickness of Junctionless Transistors by Substrate BiasJeon, Dae-Young / Mouis, Mireille / Barraud, Sylvain et al. | 2020
- 4741
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A Stochastic Framework for the Time Kinetics of Interface and Bulk Oxide Traps for BTI, SILC, and TDDB in MOSFETsKumar, Satyam / Anandkrishnan, R. / Parihar, Narendra et al. | 2020
- 4749
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TCAD Framework for HCD Kinetics in Low VD Devices Spanning Full VG/VD SpaceSharma, Uma / Duan, Meng / Diwakar, Himanshu et al. | 2020
- 4757
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Analytical Modeling of Short-Channel Effects in MFIS Negative-Capacitance FET Including Quantum Confinement EffectsPandey, Nilesh / Chauhan, Yogesh Singh et al. | 2020
- 4765
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The Impact of a Single Displacement Defect on Tunneling Field-Effect TransistorsKim, Jungsik / Han, Jin-Woo / Meyyappan, M. et al. | 2020
- 4770
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Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE CosimulationFregonese, Sebastien / Cabbia, Marco / Yadav, Chandan et al. | 2020
- 4777
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Reliability-Aware Statistical BSIM Compact Model Parameter Generation MethodologyDing, Jie / Asenov, Asen et al. | 2020
- 4784
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Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiOx Gate MaterialsZhang, Minghui / Wang, Wei / Chen, Genqiang et al. | 2020
- 4789
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Low-Noise Si-JFETs Enhanced by Split-Channel ConceptSturm-Rogon, Leonhard / Neumeier, Karl / Kutter, Christoph et al. | 2020
- 4794
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Modeling of Current Mismatch and 1/f Noise for Halo-Implanted Drain-Extended MOSFETsGupta, Chetan / Dey, Sagnik / Goel, Ravi et al. | 2020
- 4802
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Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal GatesOliveira, Alberto / Veloso, Anabela / Claeys, Cor et al. | 2020
- 4808
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Improved the C–V Curve Shift, Trap State Responsiveness, and Dynamic RON of SBDs by the Composite 2-D–3-D Channel Heterostructure Under the OFF-State StressYang, Ling / Zhang, Meng / Hou, Bin et al. | 2020
- 4813
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Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial PassivationJoishi, Chandan / Xia, Zhanbo / Jamison, John S. et al. | 2020
- 4820
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Ga0.84In0.16As0.14Sb0.86/InAs0.91Sb0.09 Dual-Junction Device for Thermophotovoltaic Energy ConversionFan, Tingmei / Tian, Chengyi / Cui, Min et al. | 2020
- 4827
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Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping ConcentrationWang, Hongyue / Hsu, Po-Chun / Zhao, Ming et al. | 2020
- 4834
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Design Guidelines and Performance Tradeoffs in Recessed AlGaN/GaN Schottky Barrier DiodesSoni, Ankit / K. M., Amogh / Shrivastava, Mayank et al. | 2020
- 4842
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Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced BreakdownRoy, Saurav / Bhattacharyya, Arkka / Krishnamoorthy, Sriram et al. | 2020
- 4849
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A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTsXue, Peng / Maresca, Luca / Riccio, Michele et al. | 2020
- 4858
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p-Diamond, Si, GaN, and InGaAs TeraFETsZhang, Yuhui / Shur, Michael S. et al. | 2020
- 4866
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2-D Strain FET (2D-SFET) Based SRAMs—Part I: Device-Circuit InteractionsThakuria, Niharika / Schulman, Daniel / Das, Saptarshi et al. | 2020
- 4875
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2D Strain FET (2D-SFET)-Based SRAMs—Part II: Back Voltage-Enabled DesignsThakuria, Niharika / Schulman, Daniel / Das, Saptarshi et al. | 2020
- 4884
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Study on Multilevel Resistive Switching Behavior With Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAMWang, Wenxiao / Li, Yang / Yue, Wenjing et al. | 2020
- 4891
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Impact of Mechanical Stress on 3-D NAND Flash Current ConductionKruv, Anastasiia / Arreghini, Antonio / Verreck, Devin et al. | 2020
- 4897
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Impact of Program/Erase Cycling Interval on the Transconductance Distribution of NAND Flash Memory DevicesChiu, Yung-Yueh / Chang, Kai-Chieh / Lin, Hsin-Jyun et al. | 2020
- 4904
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Bidirectional Analog Conductance Modulation for RRAM-Based Neural NetworksJiang, Zizhen / Wang, Ziwen / Zheng, Xin et al. | 2020
- 4911
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Investigation of Imprint in FE-HfO₂ and Its RecoveryHigashi, Y. / Kaczer, B. / Verhulst, A. S. et al. | 2020
- 4918
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An Inkjet-Printed Full-Wave Rectifier for Low-Voltage Operation Using Electrolyte-Gated Indium-Oxide Thin-Film TransistorsFeng, Xiaowei / Scholz, Alexander / Tahoori, Mehdi B. et al. | 2020
- 4924
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Improved Field-Effect Mobility of In–Ga–Zn–O TFTs by Oxidized Metal LayerPark, Ji-Min / Kim, Hyoung-Do / Jang, Seong Cheol et al. | 2020
- 4929
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An 18.6-μm-Pitch Gate Driver Using a-IGZO TFTs for Ultrahigh-Definition AR/VR DisplaysChen, Yuanfeng / Kim, Hyunho / Lee, Jiseob et al. | 2020
- 4934
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Long-Term Aging of Al2O3 Passivated and Unpassivated Flexible a-IGZO TFTsCosta, Julio Cesar / Kermani, Arash Pour Yazdan Panah / Cantarella, Giuseppe et al. | 2020
- 4940
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Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel ArraysDurnez, Clementine / Goiffon, Vincent / Virmontois, Cedric et al. | 2020
- 4947
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Improvement of the Deep UV Sensor Performance of a β-Ga2O3 Photodiode by Coupling of Two Planar DiodesVieira, Douglas H. / Badiei, Nafiseh / Evans, Jonathan E. et al. | 2020
- 4953
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Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface StructureChen, Wei-Cheng / Niu, Jing-Shiuan / Liu, I-Ping et al. | 2020
- 4958
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Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum BarriersKang, Yang / Yu, Huabin / Ren, Zhongjie et al. | 2020
- 4963
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Performance Investigation of Bulk Photoconductive Semiconductor Switch Based on Reversely Biased p+-i-n+ StructureHu, Long / Xu, Ming / Li, Xin et al. | 2020
- 4970
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High-Performance Inverted Structure Broadband Photodetector Based on ZnO Nanorods/PCDTBT:PCBM:PbS QDsUpadhyay, Deep Chandra / Upadhyay, Rishibrind Kumar / Singh, Abhinav Pratap et al. | 2020
- 4977
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The Effect of the Carrier Drift Velocity Saturation in High-Power Semiconductor Lasers at Ultrahigh Drive CurrentsSoboleva, Olga S. / Zolotarev, Vasily V. / Golovin, Vyacheslav S. et al. | 2020
- 4983
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Investigation on Photoanode Modified With TiO2–ZnO–Ag Nanofibers in Dye-Sensitized Solar Cell Under Different Intensities of IlluminationsNien, Yu-Hsun / Hu, Geng-Ming / Rangasamy, Manjunath et al. | 2020
- 4990
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Simulation Study on the Optimization and Scaling Behavior of LDMOS Transistors for Low-Voltage Power ApplicationsSaadat, Ali / Van de Put, Maarten L. / Edwards, Hal et al. | 2020
- 4998
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New Strained LDMOS With Ultralow ON-Resistance by Si1−yCy Source Stressor for About 20 V Low-Voltage ApplicationsLi, Mingzhe / Duan, Baoxing / Song, Haitao et al. | 2020
- 5005
-
Design and Fabrication Approaches of 400–600 V 4H-SiC Lateral MOSFETs for Emerging Power ICs ApplicationYun, Nick / Sung, Woongje et al. | 2020
- 5012
-
Measurement and Analysis for Time Jitter of Reversely Switched DynistorPi, Yicheng / Liang, Lin / Yan, Xiaoxue et al. | 2020
- 5020
-
A Novel Dual-Directional SCR Structure With High Holding Voltage for 12-V Applications in 0.13-μm BCD ProcessDo, Kyoung-Il / Song, Bo-Bae / Koo, Yong-Seo et al. | 2020
- 5028
-
AC-SSRM 2-D Cross-Sectional Doping Profiling for DRAM Access Devices Contact ImplantsQin, Shu et al. | 2020
- 5033
-
Electrical Properties of Al2O3/ZnO Metal–Insulator–Semiconductor CapacitorsZhang, Qihao / Lu, Jiwu / Zhai, Dongyuan et al. | 2020
- 5039
-
Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact MetallizationMao, Shujuan / Zhao, Chao / Liu, Jinbiao et al. | 2020
- 5045
-
Passivation of n- and p-Type Silicon Surfaces With Spray-Coated Sol-Gel Silicon Oxide Thin FilmBhajipale, Jayshree / Kottantharayil, Anil et al. | 2020
- 5053
-
Low Contact Resistivity to Ge Using In-Situ B and Sn Incorporation by Chemical Vapor DepositionTsai, Chung-En / Lu, Fang-Liang / Liu, Yi-Chun et al. | 2020
- 5059
-
Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector With Vanadium ElectrodeYeh, Tsung-Han / Chen, Po-Hsun / Lin, Chih-Yang et al. | 2020
- 5063
-
Fabrication of Ferroelectric Liquid Crystal ThermistorMuchenedi, Hari Kishor / N., Pongali Sathya Prabu / Madhu Mohan, M. L. N. et al. | 2020
- 5069
-
An Efficient Thermal Model for Multifinger SiGe HBTs Under Real Operating ConditionK, Nidhin / Pande, Shubham / Yadav, Shon et al. | 2020
- 5076
-
Experimental Study of the Direct-Charge Beta Radiation Method for Energy HarvestingHaim, Yedidia / deBotton, Gal et al. | 2020
- 5082
-
Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film TransistorsPruefer, Jakob / Leise, Jakob / Darbandy, Ghader et al. | 2020
- 5091
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Modeling of Both Arrhenius and Non-Arrhenius Temperature-Dependent Drain Current for Organic Thin-Film TransistorsHe, Hongyu / Xiong, Chao / Yin, Junli et al. | 2020
- 5097
-
Electromicrofluidic Device on Multilayered Laser-Induced Polyamide Substrate for Diverse Electrochemical ApplicationsKothuru, Avinash / Amreen, Khairunnisa / Goel, Sanket et al. | 2020
- 5104
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The Analysis of Potentiometric Flexible Arrayed Urea Biosensor Modified by Graphene Oxide and γ-Fe2O3 NanoparticlesNien, Yu-Hsun / Su, Tzu-Yu / Ho, Chih-Sung et al. | 2020
- 5111
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Amplified Methanol Sensitivity in Reduced Graphene Oxide FET Using Appropriate Gate ElectrostaticHazra, Arnab et al. | 2020
- 5119
-
A New Emission Mechanism for Island-Metal-Film-Based Electron SourcesZhan, Fangyuan / Li, Zhiwei / Wang, Yuwei et al. | 2020
- 5125
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Suspended Nanoscale Field Emitter Devices for High-Temperature OperationDe Rose, Lucia B. / Scherer, Axel / Jones, William M. et al. | 2020
- 5132
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Wafer-Scale Fabricated On-Chip Thermionic Electron Sources With an Integrated Extraction GateWang, Yuwei / Liu, Wenchao / Xiang, Li et al. | 2020
- 5138
-
Facile Fabrication and High Field Emission Performance of 2-D Ti₃C₂Tₓ MXene Nanosheets for Vacuum Electronic DevicesWu, Han / Shen, Siqi / Xu, Xiyan et al. | 2020
- 5144
-
Simulations of the Multipactor Effect in Ferrite Circulator Junction With Wedge-Shaped Cross Section GeometryRen, Haiping / Xie, Yongjun et al. | 2020
- 5151
-
Magnetron Injection Gun for High-Power GyroklystronZhang, Liang / Nix, Laurence J. R. / Cross, Adrian W. et al. | 2020
- 5158
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Bidirectional Volatile Signatures of Metal–Oxide Memristors—Part I: CharacterizationGiotis, Christos / Serb, Alex / Stathopoulos, Spyros et al. | 2020
- 5166
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Bidirectional Volatile Signatures of Metal-Oxide Memristors—Part II: ModelingGiotis, C. / Serb, A. / Stathopoulos, S. et al. | 2020
- 5174
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SPICE-Based Multiphysics Model to Analyze the Dynamics of Ferroelectric Negative-Capacitance–Electrostatic MEMS Hybrid ActuatorsRaman, Raghuram Tattamangalam / Ajoy, Arvind et al. | 2020
- 5182
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Compact Modeling and Electrothermal Measurements of Indirectly Heated Phase-Change RF SwitchesWainstein, Nicolas / Ankonina, Guy / Kvatinsky, Shahar et al. | 2020
- 5188
-
A Comprehensive Physics-Based Current–Voltage SPICE Compact Model for 2-D-Material-Based Top-Contact Bottom-Gated Schottky-Barrier FETsAhsan, Sheikh Aamir / Singh, Shivendra Kumar / Yadav, Chandan et al. | 2020
- 5196
-
High-Quality CVD-MoS2 Synthesized on Surface-Modified Al2O3 for High-Performance MoS2 Field-Effect TransistorsSong, Xingjuan / Xu, Jingping / Liu, Lu et al. | 2020
- 5201
-
Hall Effect Measurements in Rotating Magnetic Field on Sub-30-nm Silicon Nanowires Fabricated by a Top–Down ApproachVerma, Akshara / Borisov, Kiril / Connaughton, Stephen et al. | 2020
- 5209
-
Armchair Graphene Nanoribbon Gate-Controllable RTD With Boron Nitride BarriersMonfared, M. H. Ghasemian / Hosseini, Seyed Ebrahim et al. | 2020
- 5216
-
Flexible Oxide-Based Schottky Neuromorphic TFTs With Configurable Spiking Dynamic FunctionsHe, Yongli / Zhu, Ying / Chen, Chunsheng et al. | 2020
- 5221
-
Design and Investigation of Split-Gate MoTe2-Based FET as Single Transistor AND Gate Using Nonequilibrium Green’s FunctionKumar, Prateek / Gupta, Maneesha / Singh, Kunwar et al. | 2020
- 5229
-
Speed Up Quantum Transport Device Simulation on Ferroelectric Tunnel Junction With Machine Learning MethodsWu, Tong / Guo, Jing et al. | 2020
- 5236
-
Exploration of Negative Capacitance in Gate-All-Around Si Nanosheet TransistorsSakib, Fahimul Islam / Hasan, Md. Azizul / Hossain, Mainul et al. | 2020
- 5243
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Impacts of Stress Voltage and Channel Length on Hot-Carrier Characteristics of Tunnel Field-Effect Thin-Film TransistorMa, William Cheng-Yu / Luo, Shen-Ming et al. | 2020
- 5247
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Low Temperature Processing of Electronic Materials for Cuttung Edge Devices| 2020
- 5249
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on New simulation methodologies for next-generation TCAD tools| 2020
- 5251
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TechRxiv: Share Your Preprint Research with the World!| 2020
- 5252
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Introducing IEEE Collabratec| 2020
- C1
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Table of contents| 2020
- C2
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IEEE Transactions on Electron Devices publication information| 2020
- C3
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IEEE Transactions on Electron Devices information for authors| 2020