Metastability of Thermal Donors in Silicon: Photo-EPR Study (Englisch)
- Neue Suche nach: Bagraev, N. T.
- Neue Suche nach: Bagraev, N. T.
- Neue Suche nach: Bagraev, N. T.
In:
Defects in semiconductors I
;
529-536
;
1993
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Metastability of Thermal Donors in Silicon: Photo-EPR Study
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Beteiligte:Bagraev, N. T. ( Autor:in ) / Bagraev, N. T.
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Kongress:1st National conference, Defects in semiconductors I ; 1992 ; Petersburg; Russia
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Erschienen in:Defects in semiconductors I ; 529-536DIFFUSION AND DEFECT DATA PART A DEFECT AND DIFFUSION FORUM ; 103-105 ; 529-536
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Verlag:
- Neue Suche nach: Sitec Publications
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Erscheinungsdatum:01.01.1993
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Format / Umfang:8 pages
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Anmerkungen:Also known as NCDS-1
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 13
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Anisotropic Acceptors Induced in GaAs by Group I Elements Cu, Ag, Au: Properties and Trends (invited)Gutkin, A. A. et al. | 1993
- 25
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3D-4D-5D Transition and 4F Rare Earth Elements in III-V and II-V Semiconductors as Luminescent Centers and Probes in Diagnostics of Implanted LayersUshakov, V. V. / Gippius, A. A. et al. | 1993
- 31
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Symmetry of V~G~aTe~A~s Complex in GaAs and its Reorientation at Low TemperatureAverkiev, N. S. / Gutkin, A. A. / Osipov, E. B. / Reshchikov, M. A. et al. | 1993
- 39
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Electrodipole Spin Transitions of the Neutral Manganese Acceptor Mn~O~G~a in Gallium ArsenideBaran, N. P. / Bratus, V. Y. / Maksimenko, V. M. / Markov, A. V. et al. | 1993
- 45
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On the Ground State of Mg~G~a Defects in a GaAs: Mn SystemYakubenya, S. M. / Schtel'makh, K. F. et al. | 1993
- 51
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Defect Impurity Interaction in Irradiated n-GaAsKorshunov, F. P. / Prokhorenko, T. A. / Sobolev, N. A. / Kudriavtseva, E. A. et al. | 1993
- 57
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Long-Range Effect of Ion Irradiation on the System of Defects in Indium PhosphideBaidus, N. V. / Bednyi, B. I. / Belich, T. V. / Tetelbaum, D. I. et al. | 1993
- 61
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Phonon-Impurity Photoconductivity due to Ge Acceptor in GaAs~1~-~xSb~x AlloysBilgildeyeva, T. Y. / Polyanskaya, T. A. / Kopylov, A. A. / Shakmaev, A. A. et al. | 1993
- 67
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The EL2 Center in GaAs: Symmetry and Metastability (invited)Bagraev, N. T. et al. | 1993
- 85
-
Metastable Electronic States Caused by Native Defects and III-Group Impurities in A^4B^6 Semiconductors (invited)Akimov, B. A. / Ryabova, L. I. et al. | 1993
- 105
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Electric Field Induced Electron Emission from Deep Level Center in GaAsBobrova, E. A. / Galkin, G. N. / Ivanov, E. I. / Papkova, T. B. et al. | 1993
- 111
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Generation of the EL2 Defect in n-GaAs Irradiated by High Energy ProtonsBrunkov, P. N. / Konnikov, S. G. / Sobolev, M. M. et al. | 1993
- 119
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Synergetic Photoelectric Phenomena Induced by Associations of Rare-Earth Metal Impurities with Lattice Defects in Si and Semiconductors of Type A~3B~5 and A~2B~6Karageorgy-Alkalaev, P. M. / Leiderman, A. Y. / Karazhanov, S. Z. et al. | 1993
- 125
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Peculiarities of Display of Multistable Defects in Relaxation SpectroscopySiratskii, V. M. / Sosnin, M. G. / Shakhovtsov, V. I. / Shindich, V. L. et al. | 1993
- 133
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Spectroscopy of II-VI Compounds Doped with Transition-Metal Ions (invited)Ryskin, A. I. et al. | 1993
- 143
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Photoionization of the Impurity ion in ZnS:Fe: Influence of Lattice RelaxationRosenfeld, Y. B. / Ryskin, A. I. / Vasil'ev, A. V. / Zinger, G. M. et al. | 1993
- 149
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Vibronic Interaction and Luminescence of ZnSe:CrRyskin, A. I. / Vasil'ev, A. V. / Kremerman, V. A. / Rosenfeld, Y. B. et al. | 1993
- 157
-
Quenching Centers of Red Luminescence in ZnSe:TeRaciukaitis, G. / Gavryushin, V. / Kazlauskas, A. / Ryzhikov, V. D. et al. | 1993
- 163
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Dynamic of Electron-Phonon Interaction in ZnSe:Cr Crystals under Photoexcitation in Charge Transfer BandBulany, M. P. / Jeru, I. I. / Ivanov, V. Y. / Stepanenko, A. P. et al. | 1993
- 169
-
Nonlinear Spectroscopy of DA-Centers of Green-Edge-Luminescence in CdS Crystals. Stepwise Exciton Localization by Isoelectronic DefectsBaltramiejunas, R. / Gavryushin, V. / Kubertavicius, V. / Raciukaitis, G. et al. | 1993
- 175
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Superfine Splitting in CdS Doped by FeVardapetyan, R. P. / Kuznetsov, V. D. / Kulbachinskii, V. A. / Reyman, S. I. et al. | 1993
- 181
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Peculiarities of Spin-Splitting in the Exciton Spectra of Cd~1~-~xMn~xS Crystals in a Magnetic FieldAbramishvili, V. G. / Komarov, A. V. / Ryabchenko, S. M. / Semenov, Y. G. et al. | 1993
- 187
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Excitonic Spectra of Cd~1~-~xFe~xTe CrystalsPermogorov, S. A. / Tenishev, L. N. / Surkova, T. P. et al. | 1993
- 201
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Non-Equilibrium Diffusion in SiliconBagraev, N. T. / Klyachkin, L. E. / Sukhanov, V. L. et al. | 1993
- 215
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Non-Equilibrium Phenomena During Impurity Diffusion in Heavily Doped SiliconKonstantinov, A. O. et al. | 1993
- 221
-
Diffusion of Gold in Single Crystal Silicon with Growth MicrodefectsVysotskaya, V. V. / Gorin, S. N. et al. | 1993
- 227
-
Enhanced Gold Diffusion in Silicon under Intrinsic Point Defect FlowKoveshnikov, S. V. / Yakimov, E. B. / Yarykin, N. A. et al. | 1993
- 233
-
Defect Formation in the Bulk of Silicon Wafers at the Heating Upon Internal GetteringGorin, S. N. / Petrov, G. N. / Tkacheva, T. M. et al. | 1993
- 239
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Impurity Diffusion in Silicon under Strong Interaction with the Point Defect ClustersPashkov, V. I. / Perevoshchikov, V. A. / Skupov, V. D. et al. | 1993
- 243
-
Mechanisms of Impurity Diffusion into Pb~1~-~xSn~x Te Solid SolutionChesnokova, J. B. / Chor, C. et al. | 1993
- 249
-
The Effect of Abnormal Ion Electromigration in a Disorder MediaAlimov, D. / Goldman, V. / Oksengendler, B. et al. | 1993
- 255
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H States Passivation of Defects and Impurities in Silicon (invited)Mukashev, B. N. / Tokmoldin, S. Z. et al. | 1993
- 265
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Electron Stimulated Defect Reactions in Silicon under Pulsed Photon TreatmentBelyavsky, V. I. / Kapustin, Y. A. / Sviridov, V. V. et al. | 1993
- 273
-
Piezocapacitance Spectroscopy of Deep Level Centers in SiliconLebedev, A. A. / Ecke, W. / Sultanov, N. A. et al. | 1993
- 277
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Deep Levels of Thermal Defects in High Resistivity SiliconVerbitskaya, E. M. / Gribov, A. A. / Eremin, V. K. / Ivanov, A. M. et al. | 1993
- 283
-
Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type SiliconAstrova, E. V. / Voronkov, V. B. / Lebedev, A. A. et al. | 1993
- 287
-
Radiation Defect Formation in Silicon Doped with Impurities of the Group IV Transition MetalsKazakevich, L. A. / Kuznetsov, V. I. / Lugakov, P. F. / Salmanov, A. R. et al. | 1993
- 293
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Influence Intrinsic Elastic Stresses on the Annealing Processes of Radiation Defects in SiliconKhirunenko, L. I. / Pomozov, Y. V. / Shakhovtsov, V. I. / Shinkarenko, V. K. et al. | 1993
- 299
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Thermal Broadening of the Absorbtion Lines of Group III and V Elements in Single-Crystal SiliconAgladze, N. I. / Kaminskii, A. S. / Safonov, A. N. et al. | 1993
- 305
-
Interstitial Oxygen in Nature and Monoisotopic GermaniumVorobkalo, F. M. / Khirunenko, L. I. / Shakhovtsov, V. I. / Shinkarenko, V. K. et al. | 1993
- 311
-
Defect Production in Si:Ge Irradiated by Gamma-Rays at 4.2K, 78K and 300KEmtsev, V. V. / Golubev, V. G. / Klinger, P. M. / Kropotov, G. I. et al. | 1993
- 317
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The Substitutional Reaction in Alloys Si~1~-~xGe~xAskarov, B. / Oksengendler, B. / Sokhataliyev, S. / Khaitova, M. et al. | 1993
- 323
-
The Defects in Germanium-Silicon AlloysShakhovtsova, S. I. / Shvarts, M. M. et al. | 1993
- 329
-
The Influence of Current Carriers on Shallow Impurity Limited Solubility in SemiconductorsAtabaev, I. G. et al. | 1993
- 335
-
New Shape of Inhomogenously Broadened Resonance Lines in Semi-Infinite Media: Luminescence of Sm^2^+ Ions in the Epitaxial CaF~2 Films on Si (111)Averkiev, N. S. / Vikhnin, V. S. / Sokolov, N. S. / Yakovlev, N. L. et al. | 1993
- 341
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Hopping Conductivity of Ion-Implanted by Sulfur SiliconKulbachinskii, V. A. / Kytin, V. G. / Timofeev, A. B. / Uliashin, A. G. et al. | 1993
- 349
-
Method and Model for Treating Negative-U Centers in Silicon: Si:V^O and Si:(VH~3)^-Moliver, S. S. et al. | 1993
- 367
-
Zn-Related Center in Silicon: Negative-U PropertiesBagraev, N. T. / Polovtsev, I. S. et al. | 1993
- 387
-
Resonance (Quasilocal) States in A^I^VB^V^I Semiconductors (invited)Kaidanov, V. I. et al. | 1993
- 407
-
Superconductivity in IV-VI Semiconductors Induced by Impurity Resonance States (invited)Kaidanov, V. I. / Nemov, S. A. / Berezin, A. V. / Zhitinskaya, M. K. et al. | 1993
- 417
-
The Self-Compensation of Electrical Active Impurity by Intrinsic Defects in Solid Solutions Pb~0~,~8Sn~0~,~2Te and Pb~0~,~9~3Sn~0~,~0~7SeNemov, S. A. / Proshin, V. I. / Zhitinskaya, M. K. / Ravich, Y. I. et al. | 1993
- 421
-
Tunnel Spectroscopy of Resonance and Metastable Impurity States in Lead TellurideKaidanov, V. I. / Rykov, S. A. et al. | 1993
- 433
-
PbTe(Ga) Photoconductivity Spectra in the Far InfraredBelogorokhov, A. I. / Ivanchik, I. I. / Khokhlov, D. R. / Slyn'ko, E. I. et al. | 1993
- 437
-
Low-Temperature Switching in PbTeAkinov, B. A. / Albul, A. V. / Bogdanov, E. B. et al. | 1993
- 443
-
Localization in Ultrahigh Magnetic Fields in the Pb~1~-~xSn~xTe (In) AlloysIvanchik, I. I. / Khokhlov, D. R. / De Visser, A. / Nikorich, A. V. et al. | 1993
- 449
-
Microwave Resonance of the Persistent Photoconductivity in Pb~1~-~xSn~xTe(In) AlloysChesnokov, S. N. / Dolzhenko, D. E. / Ivanchik, I. I. / Khokhlov, D. R. et al. | 1993
- 453
-
Electrical and Photoelectrical Properties of PbSnTe/PbTeS Lattice Matched Heterostructure DiodesTetyorkin, V. V. / Sizov, F. F. / Alenberg, V. B. / Davidenko, S. N. et al. | 1993
- 461
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Dislocations in Semiconductors as One Dimensional Electronic Systems (invited)Kveder, V. V. et al. | 1993
- 473
-
Dislocation Superlattices Based on Lead Chalcogenides as HTSC Models (invited)Mironov, O. A. / Zorchenko, V. V. / Sipatov, A. Y. / Fedorenko, A. I. et al. | 1993
- 485
-
Metastable Behavior of Dislocation Charge in Space Charge RegionYakimov, E. B. / Yarykin, N. A. et al. | 1993
- 491
-
Possibility of Reconstruction of the Concentration Profile of Point Defects in Crystals by the Method of X-Ray Interference DiffractometryGoureev, T. E. / Nikulin, A. Y. / Petrachen, P. V. / Snigirev, A. A. et al. | 1993
- 497
-
Anomalously Wide Impurity Atmosphere Near the Dislocation Slip Plane in SiEremenko, V. G. / Trofimov, O. V. et al. | 1993
- 505
-
Oxygen-Related Thermal Donors in Heat-Treated Cz-Si (invited)Emtsev, V. V. / Oganesyan, G. A. / Schmalz, K. et al. | 1993
- 517
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Formation and Properties of Thermal Donors Generated by Prolonged Annealing in Si Crystals with Different Oxygen and Carbon Contents (invited)Babich, V. M. / Baran, N. P. / Bugai, A. A. / Kovalchuk, V. B. et al. | 1993
- 529
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Metastability of Thermal Donors in Silicon: Photo-EPR StudyBagraev, N. T. et al. | 1993
- 537
-
Peculiarities of Thermal Donors Generation and Oxygen Precipitation at 650C with Silicon Irradiated by NeutronsNejmash, V. B. / Pomozov, Y. V. / Shakhovtsov, V. I. / Cabaldin, A. N. et al. | 1993
- 543
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Thermal Donor Formation Affected by Strain Fields Induced Imperfections of Silicon Crystal LatticeKolkovskii, I. I. / Lugakov, P. F. / Lukyanitsa, V. V. / Tsikunov, A. V. et al. | 1993
- 551
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Analytical Approach to the Theory of Transition-Metal Impurities in Semiconductors (invited)Il'in, N. P. / Masterov, V. F. et al. | 1993
- 565
-
Cluster Approach for Investigation of Semiconductor CrystalsOnopko, D. E. / Ryskin, A. I. et al. | 1993
- 571
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Structure of Deep Impurity States of II, III, IV Group Elements in IV-VI SemiconductorsVinogradov, V. S. et al. | 1993
- 579
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Coexistence of Large and Small Radius Electron States on Defect and Problem of Charge Photo - Transfer in Ruby (invited)Vikhnin, V. S. et al. | 1993
- 587
-
Two-Level Correlated Model for Recombination in gamma,e - Irradiated SiliconDickmann, S. M. et al. | 1993
- 595
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Fluctuation-Slow-Interface-TrapsFouks, B. I. et al. | 1993
- 603
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Surface Coulomb TrapsFouks, B. I. / Storonskii, N. M. et al. | 1993
- 611
-
Impurity Polarizability in Silicon due to the Magnetic Degeneracy of Donor States in a Finite Magnetic FieldDickmann, S. M. / Sidel'nikov, D. I. et al. | 1993
- 619
-
New Ideas Concerning the Nitrogen Donor States in Noncubic SiC Basing on the High-Resolution EPR Data (invited)Shanina, B. D. / Kalabukhova, E. N. / Lukin, S. N. / Mokhov, E. N. et al. | 1993
- 627
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Definition of the Off-Center Positions Coordinates of Boron in 6H SiC from High-Resolution EPR SpectraShanina, B. D. / Kalabukhova, E. N. / Lukin, S. N. / Mokhov, E. N. et al. | 1993
- 633
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EPR and DLTS of Point Defects in Silicon Carbide Crystals (invited)Il'in, V. A. / Ballandovich, V. A. et al. | 1993
- 645
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Electronic Structure of Boron in Silicon CarbideBratus, V. Y. / Baran, N. P. / Bugai, A. A. / Klimov, A. A. et al. | 1993
- 655
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EPR of the Antisite Defect in Epitaxial Layers of 4H SiCKalabukhova, E. N. / Lukin, S. N. / Mokhov, E. N. / Shanina, B. D. et al. | 1993
- 661
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Electron Structure of ^1^1B Impurity in 6H SiC Crystal Measured by EndorPetrenko, T. L. / Teslenko, V. V. / Mokhov, E. N. et al. | 1993
- 667
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Models of Impurity Boron in Various SiC PolytypesPetrenko, T. L. / Teslenko, V. V. / Mokhov, E. N. et al. | 1993
- 673
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Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep CentersAnikin, M. M. / Lebedev, A. A. / Strel'chuk, A. M. et al. | 1993