SEU Error Rates in Advanced Digital CMOS (Englisch)
- Neue Suche nach: Massengill, L. W.
- Neue Suche nach: Alles, M. L.
- Neue Suche nach: Kerns, S. E.
- Neue Suche nach: Commissariat a l'Energie Atomique
- Neue Suche nach: Massengill, L. W.
- Neue Suche nach: Alles, M. L.
- Neue Suche nach: Kerns, S. E.
- Neue Suche nach: Leray, J.-L.
- Neue Suche nach: Commissariat a l'Energie Atomique
In:
RADECS 93
;
546-553
;
1994
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:SEU Error Rates in Advanced Digital CMOS
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Beteiligte:Massengill, L. W. ( Autor:in ) / Alles, M. L. ( Autor:in ) / Kerns, S. E. ( Autor:in ) / Leray, J.-L. / Commissariat a l'Energie Atomique
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Kongress:2nd European conference on radiation and its effects on components and systems, RADECS 93 ; 1993 ; Saint-Malo; France
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Erschienen in:RADECS 93 ; 546-553RADECS -EUROPEAN CONFERENCE- ; 546-553
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsdatum:01.01.1994
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Format / Umfang:8 pages
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Anmerkungen:See also 4363.208 vol 43 no 3 pt 1 1994 for selected papers
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 13
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Neutron, Proton, and Gamma Irradiations of Silicon DetectorsLemeilleur, F. / Glaser, M. / Heijne, E. H. M. / Jarron, P. / Commissariat a l'Energie Atomique et al. | 1994
- 20
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Measuring I MeV (Si) Equivalent Neutron Fluences with PIN Silicon DiodesMorin, J. / Arnoud, J. C. / David, J. / Zyromski, P. / Commissariat a l'Energie Atomique et al. | 1994
- 27
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Dose and Neutron-Fluence Measurements in Mixed Gamma-Neutron Fields by Means of Semi-Conductor DosimetersTavlet, M. / Leon Florian, M. E. / Commissariat a l'Energie Atomique et al. | 1994
- 33
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Pulsed Mixed n, gamma Radiation Fields for Electronic TestingVie, M. / Baboulet, J. P. / Lapeyre, P. / Ramisse, D. / Commissariat a l'Energie Atomique et al. | 1994
- 37
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High Gamma Dose Tolerant Glasses for Vision Systems in Nuclear ApplicationsDecreton, M. / Deparis, O. / Van Beckhoven, D. / Vos, F. / Commissariat a l'Energie Atomique et al. | 1994
- 43
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Rad-Hard Embedded Computers for Nuclear RoboticsGiraud, A. / Joffre, F. / Marceau, M. / Robiolle, M. / Commissariat a l'Energie Atomique et al. | 1994
- 48
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A Comparison of the Effects of Gamma Radiation from Spent Fuel and Cobalt-60 on Electronic ComponentsSharp, R. E. / Pater, S. L. / Commissariat a l'Energie Atomique et al. | 1994
- 56
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Tactical Army Dosimeter Based on P-MOS Single and Dual Gate InsulatorsBrucker, G. J. / Kronenberg, S. / Jordan, T. / Commissariat a l'Energie Atomique et al. | 1994
- 63
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Investigation into the Re-Use of PMOS DosimetersKelleher, A. / McDonnell, N. / O'Neill, B. / Lane, W. / Commissariat a l'Energie Atomique et al. | 1994
- 70
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Results from the CRRES MEP ExperimentCampbell, A. / McDonald, P. / Gonyea, R. / Reeves, M. / Commissariat a l'Energie Atomique et al. | 1994
- 77
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Calculations and Observations of Induced Radioactivity in Spaceborne MaterialsDyer, C. S. / Truscott, P. R. / Evans, H. E. / Hammond, N. / Commissariat a l'Energie Atomique et al. | 1994
- 84
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Solid State Microdosimeter for Spacecraft ApplicationsRoth, D. R. / McNulty, P. J. / Beauvais, W. J. / Reed, R. A. / Commissariat a l'Energie Atomique et al. | 1994
- 88
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SEU Tests with an Improved CF-252 SystemChen, R. / Howard, J. W. / Block, R. C. / Commissariat a l'Energie Atomique et al. | 1994
- 93
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A ^2^5^2Cf Time-of-Flight System for SEU TestingReier, M. / Swift, G. / Commissariat a l'Energie Atomique et al. | 1994
- 97
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A Multipurpose Irradiation FacilityStrasser, A. / Kuntz, F. / Commissariat a l'Energie Atomique et al. | 1994
- 101
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Dynamic Behavior of Ultra Stable Oscillators Under Irradiation at Low Dose RateBourrieau, J. / Brunet, M. / Dutrey, J. F. / Laporte, B. / Commissariat a l'Energie Atomique et al. | 1994
- 109
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Communication Interface Dose Rate HardeningClaraz, J. L. / Lalande, P. / Gluck, D. / Bredy, J. / Commissariat a l'Energie Atomique et al. | 1994
- 113
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Investigation of Single Event Effects at the System LevelNewberry, D. M. / Commissariat a l'Energie Atomique et al. | 1994
- 121
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System Hardening: Fact or Fancy?Messenger, G. C. / Commissariat a l'Energie Atomique et al. | 1994
- 125
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The Structure of SiO~2, its Defects and Radiation HardnessDevine, R. A. B. / Commissariat a l'Energie Atomique et al. | 1994
- 133
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Present and Future of Microelectronic Dielectrics: Hardening AspectsWarren, W. L. / Commissariat a l'Energie Atomique et al. | 1994
- 134
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Comparison of the Generation of Interface States in MOS Structures due to ^6^0Co and VUV Irradiation Accompanied with Photoinjection of ElectronsScharf, S. / Schmidt, M. / Wulf, F. / Braeunig, D. / Commissariat a l'Energie Atomique et al. | 1994
- 140
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Evidence of Negative Charge Trapping in High Temperature Annealed Thermal OxidePaillet, P. / Herve, D. / Leray, J. L. / Devine, R. A. B. / Commissariat a l'Energie Atomique et al. | 1994
- 146
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Development of Post-Irradiation Interface Traps and Oxide Charges in Thin Thermal Oxide and Thermal Oxinitride MOS StructuresKlaer, J. / Braeunig, D. / Wulf, F. / Commissariat a l'Energie Atomique et al. | 1994
- 154
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Space Charge Effects in SIMOX Buried OxidesHerve, D. / Paillet, P. / Leray, J. L. / Commissariat a l'Energie Atomique et al. | 1994
- 161
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Electron Transport and Impact Ionization in SiO~2Bradford, J. N. / Woolf, S. / Commissariat a l'Energie Atomique et al. | 1994
- 166
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Nuclear Evaluation of PZT Thin Films for Non Volatile MemoriesVerbeck, C. / Gaucher, P. / Commissariat a l'Energie Atomique et al. | 1994
- 174
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A Study of Radiation Vulnerability of Ferroelectric Material and DevicesCoic, Y. M. / Musseau, O. / Leray, J. L. / Commissariat a l'Energie Atomique et al. | 1994
- 182
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In-Flight Hipparcos Solar Array Performance Degradation after Three and a Half Years in GTOCrabb, R. L. / Commissariat a l'Energie Atomique et al. | 1994
- 191
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On the Degradation of 1-MeV Electron Irradiated Si~1~-~xGe~x DiodesOhyama, H. / Vanhellemont, J. / Sunaga, H. / Poortmans, J. / Commissariat a l'Energie Atomique et al. | 1994
- 199
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Generation and Annealing Behaviour of MeV Proton and ^2^5^2Cf Irradiation Induced Deep Levels in Silicon DiodesVanhellemont, J. / Kaniava, A. / Simoen, E. / Trauwaert, M.-A. / Commissariat a l'Energie Atomique et al. | 1994
- 207
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Neutron Radiation Effects in HEMTsPapaioannou, G. J. / Papastamatiou, M. / Arpatzanis, N. / Dimitrakis, P. / Commissariat a l'Energie Atomique et al. | 1994
- 213
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Optoelectronics and Fiber Optics in Space and Other Radiation EnvironmentsStassinopoulos, E. G. / Dale, C. / Commissariat a l'Energie Atomique et al. | 1994
- 215
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Current Status of Radiation Effects Knowledge for Fiber Based Systems and Associated ComponentsGreenwell, R. A. / Barnes, C. E. / Commissariat a l'Energie Atomique et al. | 1994
- 221
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Spaceflight Experiences and Lessons Learned with NASA's First Fiber Optic Data BusLaBel, K. A. / Flanegan, M. / Marshall, P. / Dale, C. / Commissariat a l'Energie Atomique et al. | 1994
- 226
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Radiation Effects in Light Emitting Diodes, Laser Diodes, Photodiodes and OptocouplersLischka, H. / Henschel, H. / Koehn, O. / Lennartz, W. / Commissariat a l'Energie Atomique et al. | 1994
- 232
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Modelling Threshold Shift of Power Laser Diodes under Neutronic and Photonic IrradiationJolly, A. / Vicrey, J. / Commissariat a l'Energie Atomique et al. | 1994
- 239
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Effects in a Lithium Tantalate Waveguide Structure Exposed to Radiation from a Flash X-Ray SourceWest, R. H. / Dowling, S. / Commissariat a l'Energie Atomique et al. | 1994
- 244
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Optical Fibres for High Radiation Dose EnvironmentsHenschel, H. / Koehn, O. / Schmidt, H. U. / Bawirzanski, E. / Commissariat a l'Energie Atomique et al. | 1994
- 251
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Pulsed X-ray Induced Attenuation Measurements of Single Mode Optical Fibers and Coupler MaterialsJohan, A. / Charre, P. / Commissariat a l'Energie Atomique et al. | 1994
- 257
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Model for the Dose, Dose-Rate and Temperature Dependence of Radiation-Induced Loss in Optical FibersGriscom, D. L. / Gingerich, M. E. / Friebele, E. J. / Commissariat a l'Energie Atomique et al. | 1994
- 262
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Scintillating Fibre Detector System for Spacecraft Component DosimetryBoeder, C. P. W. / Adams, L. / Nickson, R. / Commissariat a l'Energie Atomique et al. | 1994
- 266
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Charged Particle Effects on Optoelectronic Devices and Bit Error Rate Measurements on 400 Mbps Fiber Based Data LinksMarshall, P. / Dale, C. / LaBel, K. / Commissariat a l'Energie Atomique et al. | 1994
- 272
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Low Dose Rate Gamma Ray Induced Loss and Data Error Rate in Multimode Silica Fiber LinksBreuze, G. / Fanet, H. / Serre, J. / Colas, D. / Commissariat a l'Energie Atomique et al. | 1994
- 280
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Evaluation of Fast-Neutron Radiation Effects in Optical Fibers for Fusion Reactor DiagnosticsGriscom, D. L. / Gingerich, M. E. / Friebele, E. J. / Putnam, M. A. / Commissariat a l'Energie Atomique et al. | 1994
- 289
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Advanced Qualification TechniquesWinokur, P. S. / Shaneyfelt, M. R. / Meisenheimer, T. L. / Fleetwood, D. M. / Commissariat a l'Energie Atomique et al. | 1994
- 300
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Application of Test Method 1019.4 to Non-Hardened Power MOSFETsKhosropour, P. / Galloway, K. F. / Zupac, D. / Schrimpf, R. D. / Commissariat a l'Energie Atomique et al. | 1994
- 306
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Experimental Procedure Influence on Total Dose CMOS Inverters HardnessMondot, E. / David, J. P. / Commissariat a l'Energie Atomique et al. | 1994
- 313
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Comparison of Proton and Gamma Irradiation on HCMOS ICsPesce, A. / Muschitiello, M. / Sasanelli, N. / Paccagnella, A. / Commissariat a l'Energie Atomique et al. | 1994
- 318
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Evaluation of Fast Neutron Irradiation Effects at Liquid Argon TemperatureMerkel, B. / Commissariat a l'Energie Atomique et al. | 1994
- 320
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Total Dose Response of Transconductance in MOSFETs at Low TemperaturePease, R. L. / Clark, S. D. / Cole, P. L. / Krieg, J. F. / Commissariat a l'Energie Atomique et al. | 1994
- 325
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A Cryogenic Mixed-Signal Process for Radiation-Hardened ApplicationsVan Vonno, N. W. / Commissariat a l'Energie Atomique et al. | 1994
- 329
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Radiation Hard LOCOS Field OxideNeumeier, K. / Bruemmer, H. P. / Commissariat a l'Energie Atomique et al. | 1994
- 334
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Power MOSFET Transistors Hardening: Way to Proceed and CharacterizationVadrot, J. F. / Briand, P. / Le Noc, E. / Gaudin, D. / Commissariat a l'Energie Atomique et al. | 1994
- 338
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Comparative Effect of Gamma Total Dose on Surface Mount and Non-Surface Mount Bipolar TransistorsDowling, S. / Commissariat a l'Energie Atomique et al. | 1994
- 344
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A Detailed Hardness Evaluation of HCMOS DevicesDavid, J. P. / Mondot, E. / Villard, L. / Commissariat a l'Energie Atomique et al. | 1994
- 349
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Effects of gamma-Rays and Neutrons on the Noise Behaviour of Monolithic JFET CircuitsCesura, G. / Re, V. / Commissariat a l'Energie Atomique et al. | 1994
- 355
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Abnormal Behaviour of Low Frequency Noise in Irradiated LDD MOSFETsHoffmann, A. / Valenza, M. / Rigaud, D. / Dumas, M. / Commissariat a l'Energie Atomique et al. | 1994
- 361
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Comparison of the Low Frequency Noise Evolution with the Oxide Trapped Charge in Irradiated N-MOS TransistorsBerland, V. / Touboul, A. / Crevel, P. / Commissariat a l'Energie Atomique et al. | 1994
- 365
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Low Frequency Noise and DC Characterization of Ionization Damage in a 1-m SOI CMOS Technology Adapted for Space ApplicationsSimoen, E. / Magnusson, U. / Van den bosch, G. / Smeys, P. / Commissariat a l'Energie Atomique et al. | 1994
- 373
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Asymetrical Irradiation Effects in SIMOX MOSFETsCristoloveanu, S. / Ioannou, D. E. / Lawrence, R. K. / Campisi, G. J. / Commissariat a l'Energie Atomique et al. | 1994
- 378
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Radiation Effects on SOI Analog Devices ParametersFlament, O. / Leray, J. L. / Martin, J. L. / Montaron, J. / Commissariat a l'Energie Atomique et al. | 1994
- 385
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Radiation Induced Lifetime Degradation in SIMOX StructuresCristoloveanu, S. / Ionescu, A. M. / Chovet, A. / Heijne, E. H. M. / Commissariat a l'Energie Atomique et al. | 1994
- 392
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A 256k SRAM Static Random-Access Memory Implemented in Silicon-on-Insulator TechnologyVan Vonno, N. / Doyle, B. R. / Commissariat a l'Energie Atomique et al. | 1994
- 396
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Comparative Evolution of Various CCD Image Sensors Hardening Techniques with Ionizing RadiationCaranhac, S. / Coutures, J. L. / Commissariat a l'Energie Atomique et al. | 1994
- 401
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Radiation-Induced Dark Current Increases in CCD~5Hopkinson, G. R. / Commissariat a l'Energie Atomique et al. | 1994
- 409
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Radiation Data & Database: How and How Much?Touboul, A. / Commissariat a l'Energie Atomique et al. | 1994
- 413
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Hardening at the Design LevelKerns, S. / Commissariat a l'Energie Atomique et al. | 1994
- 415
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An 8Kx8 SRAM Designed for High Transient Radiation ToleranceKerr, J. A. / Wootten, D. / Robson, N. / Ellis, R. / Commissariat a l'Energie Atomique et al. | 1994
- 420
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A New Method for Determining the Transient Photocurrent in an Irradiated DiodeBruguier, G. / Pelanchon, F. / Sudre, C. / Moreau, Y. / Commissariat a l'Energie Atomique et al. | 1994
- 425
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Technological Parameters and Experimental Set-up Influences on Latch-up Triggering Level in Bulk CMOS DeviceDubuc, J. P. / Azais, B. / De Murcia, M. / Commissariat a l'Energie Atomique et al. | 1994
- 433
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Mechanisms for Single-Particle Latchup in CMOS StructuresJohnston, A. H. / Commissariat a l'Energie Atomique et al. | 1994
- 438
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Single Event Latchup (SEL) in IDT 7187 SRAMs - Dependence on Ion Penetration DepthLevinson, J. / Even, O. / Adler, E. / Hass, M. / Commissariat a l'Energie Atomique et al. | 1994
- 441
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Analysis of the Time-Dependent Turn-on Mechanism for Single-Event Burnout of N-Channel Power MOSFETsJohnson, G. H. / Brews, J. R. / Schrimpf, R. D. / Galloway, K. F. / Commissariat a l'Energie Atomique et al. | 1994
- 446
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Use of 2D Simulations to Study Parameters Influence on SEB Occurrence in N-Channel MOSFETsRoubaud, F. / Dachs, C. / Palau, J. M. / Gasiot, J. / Commissariat a l'Energie Atomique et al. | 1994
- 452
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Burnout Sensitivity of Power MOSFETS Operating in a Switching ConverterTastet, P. / Garnier, J. / Constans, H. / Tizoni, A. H. / Commissariat a l'Energie Atomique et al. | 1994
- 458
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Dependence of Power MOSFET Static Burnout on Charge Distribution in the Active Region of IRF150Stassionpoulos, E. G. / Brucker, G. J. / Calvel, P. / Barillot, C. / Commissariat a l'Energie Atomique et al. | 1994
- 462
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Single Event Gate Rupture in Commercial Power MOSFETsNichols, D. K. / Coss, J. R. / McCarty, K. P. / Commissariat a l'Energie Atomique et al. | 1994
- 468
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Protons & Heavy Ions Induced Stuck Bits on Large Capacity RAMsDuzellier, S. / Falguere, D. / Ecoffet, R. / Commissariat a l'Energie Atomique et al. | 1994
- 473
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Numerical Simulation of Hard Errors Induced by Heavy Ions in 4T High Density SRAM CellsGaillard, R. / Poirault, G. / Commissariat a l'Energie Atomique et al. | 1994
- 479
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Study of SEUs Generated by High Energy IonsDreute, J. / Roecher, H. / Heinrich, W. / Harboe-Soerensen, R. / Commissariat a l'Energie Atomique et al. | 1994
- 485
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Single Ion Induced Multiple-bit Upset in IDT 256K SRAMsKoga, R. / Crawford, K. B. / Grant, P. B. / Kolasinski, W. A. / Commissariat a l'Energie Atomique et al. | 1994
- 490
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Radiation Testing of Flight Lots for MARS-94 Covering Semiconductor Types as 4 M-Bit DRAM, 256 K-Bit SRAM, 256 K-Bit EEPROM and a 53C90 SCSI ControllerHarboe-Soerensen, R. / Vuilleumier, P. / Adams, L. / Nickson, B. / Commissariat a l'Energie Atomique et al. | 1994
- 499
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Heavy Ion Microscopy of Single Event Upsets in CMOS SRAMsMetzger, S. / Dreute, J. / Heinrich, W. / Roecher, H. / Commissariat a l'Energie Atomique et al. | 1994
- 503
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Monte-Carlo Simulation of the Dynamic Behavior of a CMOS Inverter Struck by a Heavy IonBrisset, C. / Dollfus, P. / Hesto, P. / Musseau, O. / Commissariat a l'Energie Atomique et al. | 1994
- 509
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The Effects of Ion Track Structure in Simulating Single Event PhenomenaDussault, H. / Howard, J. W. / Block, R. C. / Pinto, M. R. / Commissariat a l'Energie Atomique et al. | 1994
- 517
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Electronic Component Response to Energetic Heavy IonsPatin, Y. / Lochard, J. P. / Gosselin, G. / Commissariat a l'Energie Atomique et al. | 1994
- 526
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Single and Multiple Proton-Induced NIEL Events in SiliconChen, L. / McNulty, P. J. / Abdel-Kader, W. G. / Miller, T. L. / Commissariat a l'Energie Atomique et al. | 1994
- 532
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Characterization of Proton Interactions in Electronic ComponentsDoucin, B. / Patin, Y. / Lochard, J. P. / Beaucour, J. / Commissariat a l'Energie Atomique et al. | 1994
- 540
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SEU Parameters and Proton-Induced UpsetsBeauvais, W. J. / McNulty, P. J. / Abdel-Kader, W. G. / Reed, R. A. / Commissariat a l'Energie Atomique et al. | 1994
- 546
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SEU Error Rates in Advanced Digital CMOSMassengill, L. W. / Alles, M. L. / Kerns, S. E. / Commissariat a l'Energie Atomique et al. | 1994
- 554
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SEU in SOI SRAMs - A Static ModelMusseau, O. / Leray, J. L. / Ferlet-Cavrois, V. / Coic, Y. M. / Commissariat a l'Energie Atomique et al. | 1994
- 560
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Influence of Cell Structure on the SEU Sensitivity of a SRAMBion, T. / Corbiere, T. / Musseau, O. / Commissariat a l'Energie Atomique et al. | 1994
- 563
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Design of SEU-Hardened CMOS Memory Cells: The HIT CellBessot, D. / Velazco, R. / Commissariat a l'Energie Atomique et al. | 1994
- 571
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Heavy Ion Sensitivity of a SRAM in SOI Bulk-like TechnologyFerlet-Cavrois, V. / Musseau, O. / Leray, J. L. / Coic, Y. M. / Commissariat a l'Energie Atomique et al. | 1994