Defect Control and Defect Engineering in Ion-Implanted Diamond (Englisch)
- Neue Suche nach: Gippius, A. A.
- Neue Suche nach: Gippius, A. A.
- Neue Suche nach: Suezawa, M.
- Neue Suche nach: Katayama-Yoshida, H.
In:
ICDS-18
196/201
;
85-90
;
1995
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ISBN:
-
ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Defect Control and Defect Engineering in Ion-Implanted Diamond
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Beteiligte:
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Kongress:18th International conference on defects in semiconductors, ICDS-18 ; 1995 ; Sendai; Japan
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Erschienen in:ICDS-18 , 196/201 ; 85-90MATERIALS SCIENCE FORUM , 196/201 ; 85-90
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsdatum:01.01.1995
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Format / Umfang:6 pages
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Anmerkungen:4; pts
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ISBN:
-
ISSN:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
-
Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Unified Theory of Defects in InsulatorsToyozawa, Y. et al. | 1995
- 9
-
Optical and Magnetic Resonance Studies of Defects in GaNGlaser, E. R. et al. | 1995
- 17
-
The Effective Mass Donor in GalliumnitrideAlt, H. C. / Meyer, B. K. / Volm, D. / Graber, A. et al. | 1995
- 23
-
Free Electrons and Resonant Donor State in Gallium NitridePerlin, P. / Suski, T. / Teisseyre, H. / Leszczynski, M. et al. | 1995
- 25
-
Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based HeterostructuresCarlos, W. E. / Glaser, E. R. / Kennedy, T. A. / Nakamura, S. et al. | 1995
- 31
-
Carrier Localization in Gallium NitrideWetzel, C. / Walukiewicz, W. / Haller, E. E. / Ager, J. W. et al. | 1995
- 37
-
Time-Resolved ODMR Measurements on the "Yellow Luminescence" in MOCVD-Grown GaN FilmsKoschnick, F. K. / Spaeth, J.-M. / Glaser, E. R. / Doverspike, K. et al. | 1995
- 43
-
Luminescence of Doped and Undoped Bulk Crystals of GaNTeisseyre, H. / Suski, T. / Perlin, P. / Gorczyca, I. et al. | 1995
- 49
-
Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase EpitaxyYi, G.-C. / Wessels, B. W. et al. | 1995
- 55
-
Characterization of Residual Transition Metal Ions in GaN and AlNBaur, J. / Kaufmann, U. / Kunzer, M. / Schneider, J. et al. | 1995
- 61
-
^1^1^9Sn Moessbauer Study of Ion Implanted GaNFanciulli, M. / Lindroos, M. / Weyer, G. / Moustakas, T. D. et al. | 1995
- 67
-
Ni Complexes in DiamondGoss, J. / Resende, A. / Jones, R. / Oeberg, S. et al. | 1995
- 73
-
Nickel and Nitrogen (?) Related Defects in High Pressure Synthetic DiamondNazare, M. H. / Rino, L. M. / Kanda, H. et al. | 1995
- 79
-
Ni Related Centers in Synthetic DiamondHofmann, D. M. / Christmann, P. / Volm, D. / Pressel, K. et al. | 1995
- 85
-
Defect Control and Defect Engineering in Ion-Implanted DiamondGippius, A. A. et al. | 1995
- 91
-
Ga Bound Excitons in 6H-SiCHenry, A. / Hallin, C. / Ivanov, I. G. / Bergman, J. P. et al. | 1995
- 97
-
Photoluminescence and Electron-Spin-Resonance Studies of Defects in Ion-Implanted Thermal SiO~2 FilmsNishikawa, H. / Fukui, H. / Watanabe, E. / Ito, D. et al. | 1995
- 103
-
Theory of Interstitial Oxygen in Silicon and GermaniumArtacho, E. / Yndurain, F. et al. | 1995
- 109
-
Impurity Behavior during Si Single Crystal Growth from the MeltIzumi, T. / Morita, H. / Fujiwara, T. / Fujiwara, H. et al. | 1995
- 115
-
Lattice Sites of Li in Si and GeWahl, U. / Jahn, S. G. / Restle, M. / Quintel, H. et al. | 1995
- 121
-
Oscillator Strengths and Linewidths of Shallow Impurity Spectra in Si and GeAndreev, B. A. / Kozlov, E. B. / Lifshits, T. M. et al. | 1995
- 127
-
Electric Field Broadening of Gallium Acceptor States in Compensated Ge:Ga,AsItoh, K. M. / Walukiewicz, W. / Beeman, J. W. / Haller, E. E. et al. | 1995
- 133
-
Carbon Induced Inhomogeneous Strain Splitting of the Phosphorus Bound Exciton Line in SiliconSafonov, A. N. / Lightowlers, E. C. / Davies, G. et al. | 1995
- 139
-
Isoelectronic Bound-Multiexciton Systems in Thermally-Treated Czochralski SiliconJeyanathan, L. / Lightowlers, E. C. / Davies, G. et al. | 1995
- 145
-
Excitons Bound to Isoelectronic C~3~V-Defects B^4~8~0 (1.1068 eV) in SiliconKaminskii, A. S. / Lavrov, E. V. et al. | 1995
- 151
-
Defect Production and Annealing in Degenerate Silicon Irradiated with Fast Electrons at Low TemperaturesEhrhart, P. / Emtsev, V. V. / Poloskin, D. S. / Zillgen, H. et al. | 1995
- 157
-
Optical Studies of Infrared Active Defects in Irradiated Si after Annealing at 450CShi, Y. / Suezawa, M. / Wu, F. M. / Imai, M. et al. | 1995
- 163
-
Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation ReactionsEmtsev, V. V. / Poloskin, D. S. / Shek, E. I. / Sobolev, N. A. et al. | 1995
- 167
-
EPR and IR Absorption of Defects in Isotopically Enriched GermaniumKhirunenko, L. / Tripachko, N. / Shakhovtsov, V. / Yashnik, V. et al. | 1995
- 173
-
NMR Study of Impurity Electronic Structure and DynamicsWarren, W. W. / Fuller, S. E. / Goebel, A. / Bindley, U. et al. | 1995
- 179
-
Native Point Defect Equilibria and the Phase Extent of Gallium ArsenideHurle, D. T. J. et al. | 1995
- 189
-
The Role of Point Defects in Non-Stoichiometric III-V CompoundsPrasad, A. / Liu, X. / Fujioka, H. / Jaeger, N. D. et al. | 1995
- 195
-
Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMRKrambrock, K. / Le Berre, C. / Corbel, C. / Saarinen, K. et al. | 1995
- 201
-
Bound Exciton Spectra in Semi-Insulating GaAsGislason, H. P. / Yang, B. H. et al. | 1995
- 207
-
Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li DonorsPetursson, J. / Ingvarsson, S. P. / Yang, B. H. / Gislason, H. P. et al. | 1995
- 213
-
Magneto-Optical and ODENDOR Investigations of the Substitutional Oxygen Defect in GalliumarsenideLinde, M. / Alt, H. C. / Spaeth, J.-M. et al. | 1995
- 219
-
Identification of Phonon Scattering Resonances with Defects in Gallium ArsenideMaier, F. / Eilenberger, R. / Beck, W. / Lassmann, K. et al. | 1995
- 225
-
Photoluminescence of Germanium Doped Gallium ArsenideWatanabe, T. / Suezawa, M. / Kasuya, A. / Sumino, K. et al. | 1995
- 231
-
Effect of Donor Nature on Behavior of Photoluminescence of the Callium Vacancy - Shallow Donor Complexes in n-Type GaAs under Uniaxial PressureGutkin, A. A. / Averkiev, N. S. / Reshchikov, M. A. / Sedov, V. E. et al. | 1995
- 237
-
Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAsReshchikov, M. A. / Gutkin, A. A. / Sedov, V. E. et al. | 1995
- 243
-
Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs SubstratesYoshida, H. / Kiyama, M. / Takebe, T. / Yamashita, M. et al. | 1995
- 249
-
Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Characterization of Localized StatesLandman, J. I. / Morgan, C. G. / Schick, J. T. / Kumar, A. et al. | 1995
- 255
-
Generation of EL2-Level upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBELin, T.-C. / Indou, S. / Okumura, T. et al. | 1995
- 261
-
Thermal and Optical Emission Processes of Electrons and Holes from EL2 in n- and p-Type GaAsOkushi, H. / Sekiguchi, T. / Tokumaru, Y. / Sumino, K. et al. | 1995
- 267
-
Studies of Deep Levels in n-GaAs by SADLTSSato, K. / Tanaka, K. / Yoshino, J. / Okamoto, Y. et al. | 1995
- 273
-
Trends in the Metastability of DX-CentersSchmidt, T. M. / Fazzio, A. / Caldas, M. J. et al. | 1995
- 279
-
Carrier Concentration Saturation in n Type Al~xGa~1~-~xAsDu, A. Y. / Li, M. F. / Chong, T. C. / Chua, S. J. et al. | 1995
- 285
-
Doping Puzzles in II-VI and III-V SemiconductorsChadi, D. J. / Park, C. H. et al. | 1995
- 293
-
Theoretical Study on Hole Compensation Mechanism: Stability of Two Nitrogen Atoms at Se Substitutional Site of ZnSeNakao, T. / Suzuki, M. / Uenoyama, T. / Funayose, Y. et al. | 1995
- 297
-
Acceptor Compensation in Nitrogen Doped Zinc SelenideSong, C. D. / Wu, Y. H. / Suezawa, M. / Nishiyama, F. et al. | 1995
- 303
-
Nitrogen-Doping Efficiency in ZnSe and ZnTeCheong, B. H. / Chang, K. J. et al. | 1995
- 309
-
Doping of ZnSe, ZnTe and CdTe with Group V ElementsWolf, H. / Burchard, A. / Deicher, M. / Filz, T. et al. | 1995
- 315
-
Lattice Sites of Ion Implanted Li in Zn-Rich ZnSeJahn, S. G. / Wahl, U. / Restle, M. / Quintel, H. et al. | 1995
- 321
-
Intrinsic Defects in ZnSe, ZnTe and CdS Doped with LiWolf, H. / Jost, A. / Lermen, R. / Filz, T. et al. | 1995
- 327
-
The Electronic Structure of Deep Donors and the Nature of the Anion Vacancy in II-VI Compound SemiconductorsIllgner, M. / Overhof, H. et al. | 1995
- 333
-
Studies of Defects in Electron and Proton Irradiated ZnO by Positron AnnihilationPuff, W. / Brunner, S. / Mascher, P. / Balogh, A. G. et al. | 1995
- 339
-
Photoluminescence of Bulk Si-Ge Single CrystalsHonda, T. / Suezawa, M. / Sumino, K. et al. | 1995
- 345
-
Dopant Diffusion in Strained and Relaxed Si~1~-~xGe~xPaine, A. D. N. / Morooka, M. / Willoughby, A. F. W. / Bonar, J. M. et al. | 1995
- 349
-
In Situ Phosphorus Doping of Si and Si~1~-~xGe~x Epitaxial Layers by RTP/VLP-CVDHuang, X.-D. / Han, P. / Shi, Y. / Zheng, Y.-D. et al. | 1995
- 353
-
Electrical Transport in Si~xGe~1~-~x Bulk AlloysMchedlidze, T. R. / Yonenaga, I. / Matsui, A. / Sumino, K. et al. | 1995
- 359
-
Electron Paramagnetic Resonance of Phosphorus, Platinum and Iron in Float Zone Si~1~-~xGe~x CrystalsHoehne, M. / Juda, U. / Wollweber, J. / Schulz, D. et al. | 1995
- 365
-
Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial FilmsMera, Y. / Maeda, K. / Shiraki, Y. et al. | 1995
- 371
-
Irradiation Induced Lattice Defects in Si~1~-~xGe~x Epitaxial DevicesOhyama, H. / Vanhellemont, J. / Takami, Y. / Hayama, K. et al. | 1995
- 377
-
Photoluminescence of Deformed Si-Ge AlloyTanaka, K. / Matui, A. / Suezawa, M. / Sumino, K. et al. | 1995
- 383
-
Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si EpilayersKittler, M. / Ulhaq-Bouillet, C. / Higgs, V. et al. | 1995
- 389
-
An Electron Paramagnetic Resonance Study of Defects in Semiconducting Iron DisilicideIrmscher, K. / Gehlhoff, W. / Tomm, Y. / Lange, H. et al. | 1995
- 395
-
DX Centers versus Shallow D^- Centers in AlGaAs Based Quantum WellsHuant, S. / Mandray, A. / Martinez, G. / Etienne, B. et al. | 1995
- 403
-
Extrinsic Self-Trapping of an Electron in Quantum-Well StructuresShinozuka, Y. et al. | 1995
- 409
-
Carbon Delta-Doping in GaAs and AlAsHart, L. / Davidson, B. R. / Fernandez, J. M. / Newman, R. C. et al. | 1995
- 415
-
Theory of Si -Doped GaAsJones, R. / Oeberg, S. et al. | 1995
- 421
-
Metastability and Electronic Structure of Periodically n-Type and p-Type -Doped Layer in GaAsFazzio, A. / Schmidt, T. M. et al. | 1995
- 425
-
Infrared and Raman Studies of Si -Doped (100) GaAs Grown by MBE at 400C on c(4x4) SurfacesNewman, R. C. / Ashwin, M. J. / Fahy, M. R. / Hart, L. et al. | 1995
- 431
-
Saturation of Luminescence Quenching due to Nonradiative Centers in a GaAs/AlGaAs Quantum WellKamata, N. / Kanoh, E. / Hoshino, K. / Yamada, K. et al. | 1995
- 437
-
Defect Induced Electron Transport through Semiconductor BarriersBourgoin, J. C. / El Mir, L. et al. | 1995
- 443
-
Correlated Charged Donors in GaAs/AlGaAs Quantum Well: Quantum- and Mobility-Scattering TimesSuski, T. / Wisniewski, P. / Litwin-Staszewska, E. / Skierbiszewski, C. et al. | 1995
- 449
-
Non-Radiative Recombination in Irradiated GaAs/AsGaAs Multiple Quantum WellsBergman, J. P. / Holtz, P. O. / Monemar, B. / Lindstroem, L. et al. | 1995
- 455
-
Defect Related Recombination Processes in II-VI Quantum WellsGodlewski, M. / Bergman, J. P. / Monemar, B. / Koziarska, B. et al. | 1995
- 461
-
Magnetoelectronic States in Semiconductor/Antiferromagnet SuperlatticesWilamowski, Z. / Jantsch, W. / Springholz, G. / Faschinger, W. et al. | 1995
- 467
-
Shallow and Deep Centers in Heavily Doped Silicon Quantum WellsGehlhoff, W. / Bagraev, N. T. / Klyachkin, L. E. et al. | 1995
- 473
-
Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si HeterostructuresChen, W. M. / Buyanova, I. A. / Henry, A. / Ni, W.-X. et al. | 1995
- 479
-
Defect Formation and Recombination Processes in p-Type Modulation-Doped Si EpilayersBuyanova, I. A. / Chen, W. M. / Henry, A. / Ni, W. X. et al. | 1995
- 485
-
Profiling the Deep Levels in SiGe/Si Microstructure by Small-Pulse Deep Level Transient SpectroscopyZhang, R. / Yang, K. / Qing, G.-Y. / Shi, Y. et al. | 1995
- 491
-
Multiphonon Carrier Emission and Capture by Defects in NanostructuresYassievich, I. N. / Pakhomov, A. A. et al. | 1995
- 497
-
Adsorption of Antimony on Si(113) Surfaces: Ab-Initio Calculations and STM InvestigationsDabrowski, J. / Muessig, H.-J. / Wolff, G. / Arabczyk, W. et al. | 1995
- 503
-
Enhanced Impurity Solubility and Diffusion Near SurfacesTersoff, J. et al. | 1995
- 505
-
A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer EpitaxyWalther, T. / Humphreys, C. J. / Cullis, A. G. / Robbins, D. J. et al. | 1995
- 511
-
Si/Ge Ordered Interface: Structure and Formation MechanismIkarashi, N. / Akimoto, K. / Oshiyama, A. / Tatsumi, T. et al. | 1995
- 517
-
Spin Dependent Recombination and EPR of Surface Paramagnetic Centers in Crystalline and Porous SiliconLaiho, R. / Vlasenko, L. S. / Vlasenko, M. P. et al. | 1995
- 523
-
Variation of 2DEG-Properties on Heterointerface Caused by the Surface Defects RechargingKreshchuk, A. M. / Kipshidze, G. D. / Novikov, S. V. / Savel'ev, I. G. et al. | 1995
- 529
-
Structure of the P~b Center: ENDOR InvestigationBratus, V. Y. / Ishchenko, S. S. / Okulov, S. M. / Vorona, I. P. et al. | 1995
- 535
-
High Quality GaAs on Si Grown by CBEUchida, H. / Adachi, M. / Egawa, T. / Nishikawa, H. et al. | 1995
- 539
-
Control of Defects in GaAs/GaInP Interface Grown by MOVPEArai, T. / Uchida, K. / Tokunaga, H. / Matsumoto, K. et al. | 1995
- 543
-
Ab Initio Study of CI Impurity at GaAs SurfacesOhno, T. / Sasaki, T. et al. | 1995
- 549
-
Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum RegimFarvacque, J. L. / Bougrioua, Z. / Ferre, D. et al. | 1995
- 555
-
High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the InterfaceShinohara, M. / Yokoyama, H. / Inoue, N. et al. | 1995
- 561
-
Strain Characterization of Hg~1~-~xFe~xSe-Layers by Electron Spin ResonanceHendorfer, G. / Jantsch, W. / Helzel, W. / Li, J. H. et al. | 1995
- 567
-
Photoreflectance, Reflectivity and Photoluminescence of MOVPE Crown ZnSe/GaAs Epilayers and ZnSeS/ZnSe SuperlatticesBoemare, C. / Nazare, M. H. / Taudt, W. / Soellner, J. et al. | 1995
- 573
-
Photoinduced Defects in CdS-Doped GlassesMiyoshi, T. / Towata, K. / Matsuki, H. / Matsuo, N. et al. | 1995
- 579
-
Electronic Structure of Erbium Centers in SiliconGan, F. / Assali, L. V. C. / Kimerling, L. C. et al. | 1995
- 585
-
Erbium in Silicon: A Defect System for Optoelectronic Integrated CircuitsMichel, J. / Palm, J. / Gan, F. / Ren, F. Y. G. et al. | 1995
- 591
-
Excitation of Rare Earths in Semiconductors by the Excitonic Auger RecombinationTsimperidis, I. / Gregorkiewicz, T. / Ammerlaan, C. A. J. et al. | 1995
- 597
-
Optical and Electrical Properties of Si:Er Light-Emitting StructuresSobolev, N. A. / Alexandrov, O. V. / Bresler, M. S. / Gusev, O. B. et al. | 1995
- 603
-
Light Emission from Er-Implanted Silicon Using AnodizationUekusa, S. / Yoshida, M. / Shimazu, K. / Majima, A. et al. | 1995
- 609
-
Erbium Related Centers in CZ-SiliconJantsch, W. / Przybylinska, H. / Suprun-Belevich, Y. / Stepikhova, M. et al. | 1995
- 615
-
Electrically Active Centers in Silicon Doped with ErbiumEmtsev, V. V. / Alexandrov, O. V. / Poloskin, D. S. / Shek, E. I. et al. | 1995
- 621
-
Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P SourceFujiwara, Y. / Ito, Y. / Nonogaki, Y. / Matsubara, N. et al. | 1995
- 627
-
Total Energy Calculation for Er Impurity in GaAsTaguchi, A. / Ohno, T. et al. | 1995
- 633
-
Estimation of Rare-Earth Energy Levels in the Bandgap of SemiconductorsTaguchi, A. / Takahei, K. et al. | 1995
- 639
-
Characteristics of Er-Oxygen Complex Centers in GaAsTakahei, K. / Horikoshi, Y. / Taguchi, A. et al. | 1995
- 645
-
Pressure-Induced Increase of the Intra-4f Luminescence of GaAs:Er,O at Room TemperatureTakarake, K. / Mizushima, T. / Minomura, S. / Taguchi, A. et al. | 1995
- 651
-
Relaxation of Yb 4f-Shell in In(P,As) AlloysKozanecki, A. / Szczerbakow, A. / Koziarska, B. et al. | 1995
- 657
-
The Importance of Auger Effect on the Efficiency of Er-Related Luminescence in InP:ErWang, X. Z. / Wessels, B. W. et al. | 1995
- 663
-
Investigation of Er-Related Centers in Doped GaPWang, X. Z. / Wessels, B. W. et al. | 1995
- 669
-
High Resolution DLTS Studies of Transition-Metal-Related Defects in SiliconDobaczewski, L. / Kaminski, P. / Kozlowski, R. / Surma, M. et al. | 1995
- 677
-
Ab-Initio Total Energy Calculations and the Hyperfine Interaction of Interstitial Iron in SiliconWeihrich, H. / Overhof, H. et al. | 1995
- 683
-
Substitutional Transition Metal Defects in Silicon Grown-In by the Float Zone TechniqueLemke, H. et al. | 1995
- 689
-
Interaction of Iron Donor with Transition-Metal Impurities in SiliconAli, A. / Zafar Iqbal, M. / Baber, N. / Gill, A. A. et al. | 1995
- 695
-
Lithium-Gold-Related Photoluminescence in n-Type SiliconGislason, H. P. / Kristjansson, S. / Sveinbjoernsson, E. O. et al. | 1995
- 701
-
Copper Species in Ultra-Pure Germanium CrystalsShmagin, V. B. / Andreev, B. A. / Gavva, V. A. / Gusev, A. V. et al. | 1995
- 707
-
Zeeman Spectroscopy and Crystal-Field Model of Neutral Vanadium in 6H-Silicon CarbideKaufmann, B. / Doernen, A. / Ham, F. S. et al. | 1995
- 713
-
Electronic Properties of GaAs Doped with CopperYang, B. H. / Gislason, H. P. et al. | 1995
- 719
-
Zeeman Spectroscopy of Transition Metals in Hexagonal GaNHeitz, R. / Thurian, P. / Loa, I. / Eckey, L. et al. | 1995
- 725
-
Paramagnetic Resonance of the Neutral Manganese Acceptor in GaPKreissl, J. / Ulrici, W. / El-Metoui, M. / Vasson, A.-M. et al. | 1995
- 737
-
Electron Paramagnetic Resonance of the Mn-Impurity in ZnS NanocrystalsKennedy, T. A. / Glaser, E. R. / Klein, P. B. / Bhargava, R. N. et al. | 1995
- 743
-
Zeeman Splitting and Isotope Shift of Optical Transitions at Ni^2^+ Centers in Cubic ZnSSchrepel, C. / Schoepp, J. / Heitz, R. / Hoffmann, A. et al. | 1995
- 749
-
Energy States of Ni and Band Offsets in Zn~1~-~xCd~xSe(Ni) and ZnS~xSe~1~-~x(Ni) AlloysSurkova, T. P. / Giriat, W. / Godlewski, M. / Kaczor, P. et al. | 1995
- 755
-
Intermediately Bound Excitons in Wurtzite Type Semiconductors Doped with Transition Metal ImpuritiesDahan, P. / Fleurov, V. / Kikoin, K. A. et al. | 1995
- 761
-
Iron and Nickel as Centers of Nonradiative Recombination in ZnS and ZnSeSurma, M. / Zakrzewski, A. J. / Godlewski, M. et al. | 1995
- 767
-
Nonlinear Zeeman Behaviour of Copper Centers in ZnS and CdSTelahun, T. / Thurian, P. / Hoffmann, A. / Broser, I. et al. | 1995
- 773
-
Electron Paramagnetic Resonance and Optical Studies of Vanadium-Doped ZnTeKreissl, J. / Irmscher, K. / Peka, P. / Lehr, M. U. et al. | 1995
- 779
-
The Titanium and Vanadium Donor in CdTeChristmann, P. / Kreissl, J. / Hofmann, D. M. / Meyer, B. K. et al. | 1995
- 785
-
Peculiarities of Interstitial Carbon and Di-Carbon Defects in SiJones, R. / Oeberg, S. / Leary, P. / Torres, V. et al. | 1995
- 791
-
The NNO Defect in SiliconBerg Rasmussen, F. / Oeberg, S. / Jones, R. / Ewels, C. et al. | 1995
- 797
-
Generation of Deep Level by Nitrogen Diffusion in SiFuma, N. / Tashiro, K. / Kakumoto, K. / Takano, Y. et al. | 1995
- 803
-
A First-Principles Study of Carbon Impurities in GaAs and InAsChang, K. J. / Lee, S.-G. / Cheong, B.-H. et al. | 1995
- 809
-
Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen VibrationsStavola, M. / Zheng, J.-F. / Cheng, Y. M. / Abernathy, C. R. et al. | 1995
- 817
-
Hydrogen Incorporation and Interaction with Impurities and Defects in Silicon Investigated by Photoluminescence SpectroscopyLightowlers, E. C. et al. | 1995
- 825
-
A Hydrogen-Related Defect in Polycrystalline CVD DiamondZhou, X. / Watkins, G. D. / McNamara Rutledge, K. M. et al. | 1995
- 831
-
Dynamics of Hydrogen in Si and GaAs: Results from Muonium ExperimentsLichti, R. L. / Schwab, C. / Estle, T. L. et al. | 1995
- 837
-
Acceptor and Donor Neutralization by Hydrogen in Bulk 6H-SiCClerjaud, B. / Gendron, F. / Porte, C. / Wilkening, W. et al. | 1995
- 843
-
Hydrogen States and Passivation in SiliconMukashev, B. N. / Tokmoldin, S. Z. et al. | 1995
- 849
-
ENDOR Identification of a Hydrogen-Passivated Thermal DonorMartynov, Y. V. / Gregorkiewicz, T. / Ammerlaan, C. A. J. et al. | 1995
- 855
-
Hydrogen Passivation of the Sulfur Double Donor in Silicon Investigated by EPR and ENDORZevenbergen, I. S. / Gregorkiewicz, T. / Ammerlaan, C. A. J. et al. | 1995
- 861
-
Hydrogen Passivation of Iron-Related Hole Traps in SiliconKouketsu, M. / Watanabe, K. / Isomae, S. et al. | 1995
- 867
-
Boron Neutralization in Epitaxial Si Films Grown by Photo-CVD at Very Low Temperature (200C)Abe, K. / Oshima, T. / Yamada, A. / Konagai, M. et al. | 1995
- 873
-
Screening Effect of Binding of P-Si-H Complex in SiliconFukata, N. / Fujimura, S. / Murakami, K. et al. | 1995
- 879
-
The H~2^* Defect in Crystalline GermaniumBudde, M. / Bech Nielsen, B. / Jones, R. / Oeberg, S. et al. | 1995
- 885
-
A Theoretical Study of the B-H and Al-H Complexes in SiliconZhou, Y. / Luchsinger, R. / Meier, P. F. et al. | 1995
- 891
-
Calculations of the Neutral and Charged States of the {H,C} Pair in SiliconZhou, Y. / Luchsinger, R. / Meier, P. F. / Suter, H. U. et al. | 1995
- 897
-
Structural and Electronic Properties of Carbon-Hydrogen Complex in SiliconKaneta, C. / Katayama-Yoshida, H. et al. | 1995
- 903
-
Stability and Defect Reaction of Two Hydrogen-Carbon Complexes in SiliconKamiura, Y. / Tsutsue, M. / Hayashi, M. / Yamashita, Y. et al. | 1995
- 909
-
Carbon-Hydrogen Deep Level Luminescence Centre in Silicon Responsible for the T-LineSafonov, A. N. / Lightowlers, E. C. / Davies, G. et al. | 1995
- 915
-
Optical Absorption due to Vibration of Hydrogen-Oxygen Pairs in SiliconMarkevich, V. P. / Suezawa, M. / Sumino, K. et al. | 1995
- 921
-
Theory of the NiH~2 Complex in Si and the CuH~2 Complex in GaAsJones, R. / Goss, J. / Oeberg, S. / Briddon, P. R. et al. | 1995
- 927
-
Hydrogen Induced Defects in Cobalt Doped SiliconJost, W. / Weber, J. / Lemke, H. et al. | 1995
- 933
-
H Interacting with Intrinsic Defects in SiBech Nielsen, B. / Hoffmann, L. / Budde, M. / Jones, R. et al. | 1995
- 939
-
Formation of Hydrogen-Oxygen-Vacancy Complexes in SiliconHatakeyama, H. / Suezawa, M. / Markevich, V. P. / Sumino, K. et al. | 1995
- 945
-
Metastability and Negative-U Properties for Hydrogen-Related Radiation-Induced Defect in SiliconMarkevich, V. P. / Medvedeva, I. F. / Murin, L. I. / Sekiguchi, T. et al. | 1995
- 951
-
Interstitial Hydrogen and the Dissociation of C-H Defects in GaAsBreuer, S. J. / Jones, R. / Oeberg, S. / Briddon, P. R. et al. | 1995
- 957
-
Hydrogen Induced Degradation in Heavily Carbon-Doped GaAs DiodesFushimi, H. / Wada, K. et al. | 1995
- 963
-
Acceptor-Hydrogen Complexes in InAsForkel-Wirth, D. / Achtziger, N. / Burchard, A. / Correia, J. C. et al. | 1995
- 969
-
Vacancy- and Acceptor-H Complexes in InPEwels, C. P. / Oeberg, S. / Jones, R. / Pajot, B. et al. | 1995
- 975
-
Investigation of the Manganese-Hydrogen Complex in InPClerjaud, B. / Cote, D. / Lebkiri, A. / Mari, A. et al. | 1995
- 981
-
First-Principles Calculation on Hydrogen Passivation Mechanism in Mg Doped GaNOkamoto, Y. / Saito, M. / Oshiyama, A. et al. | 1995
- 987
-
Acceptor-Hydrogen Interaction in Ternary III-V SemiconductorsBurchard, A. / Deicher, M. / Forkel-Wirth, D. / Freidinger, J. et al. | 1995
- 993
-
Upconversion Induced by Deep Defects in GaAsIino, T. / Weber, J. et al. | 1995
- 1001
-
Negative Effective-U and Positive Effective-U Nature of the Bistable Dangling-Bonds in a-Si, a-Si:H and c-Si Studied by ab initio Molecular-Dynamics SimulationOrita, N. / Matsumura, T. / Katayama-Yoshida, H. et al. | 1995
- 1007
-
New Bistable Oxygen-Related Complex in SiliconAbdullin, K. A. / Mukashev, B. N. / Gorelkinskii, Y. V. et al. | 1995
- 1013
-
Theoretical Modelling of Donor Metastable States in n-Type Gallium ArsenideBarmby, P. W. / Dunn, J. L. / Bates, C. A. / Klaassen, T. O. et al. | 1995
- 1019
-
Donor Metastable States and the Polaron Effect in n-Type Gallium ArsenideBarmby, P. W. / Dunn, J. L. / Bates, C. A. / Klaassen, T. O. et al. | 1995
- 1025
-
A New Type of Metastability Due to Donors in GaAsSkierbiszewski, C. / Jantsch, W. / Wilamowski, Z. / Luebke, K. et al. | 1995
- 1031
-
Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in SI-GaAsFukuyama, A. / Ikari, T. / Akashi, Y. / Futagami, K. et al. | 1995
- 1037
-
The Role of a 70-80 meV Acceptor in the Photoquenching of EL2Suemitsu, M. / Takahashi, H. / Sagae, Y. / Miyamoto, N. et al. | 1995
- 1043
-
Holes Induced by Strong Near Band Gap Light in GaAs:O - EL2 Related?Machado, W. V. / Amato, M. A. / Landim, A. F. S. / Ridley, B. K. et al. | 1995
- 1049
-
Metastable Photogenerated Effects in Low Resistivity GaAsMachado, W. V. / Landin, A. F. S. / Amato, M. A. / Ridley, B. K. et al. | 1995
- 1055
-
Introduction of Metastable Vacancy Defects in Electron Irradiated Semi-Insulating GaAsSaarinen, K. / Kuisma, S. / Maekinen, J. / Hautojaervi, P. et al. | 1995
- 1061
-
Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects?Wietzke, K.-H. / Koschnick, F. K. / Spaeth, J.-M. et al. | 1995
- 1067
-
Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAsAuret, F. D. / Goodman, S. A. / Meyer, W. E. et al. | 1995
- 1073
-
Local Structure of the DX Center in AlGaAs: Results from Positron SpectroscopyLaine, T. / Maekinen, J. / Saarinen, K. / Hautojaervi, P. et al. | 1995
- 1079
-
Direct Experimental Evidence of Autolocalization Nature of DX^- CentersGanichev, S. D. / Yassievich, I. N. / Prettl, W. / Diener, J. et al. | 1995
- 1085
-
Magneto-Optical and EPR Investigation of Ionised DX Centers in Te-Doped Al~xGa~1~-~xAsPinheiro, M. V. B. / Linde, M. / Ohkura, H. / Spaeth, J.-M. et al. | 1995
- 1091
-
Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAsKaczor, P. / Zytkiewicz, Z. R. / Dobaczewski, L. et al. | 1995
- 1097
-
A Bistable Defect in Si-Doped Al~0~.~3Ga~0~.~7AsSobolev, M. M. / Kochnev, I. V. / Papentsev, M. I. / Kalinovsky, V. S. et al. | 1995
- 1103
-
Use of Bistable Centers in CdF~2 in Holographic RecordingKoziarska, B. / Langer, J. M. / Ryskin, A. I. / Shcheulin, A. S. et al. | 1995
- 1109
-
Structural Study of Degraded II-VI Blue-Light EmittersTomiya, S. / Ukita, M. / Okuyama, H. / Nakano, K. et al. | 1995
- 1117
-
Evidence for High Vacancy Concentrations in Heavily Doped n-Type Silicon from Moessbauer ExperimentsWeyer, G. / Fanciulli, M. / Freitag, K. / Nylandsted, A. et al. | 1995
- 1123
-
Analysis of the Recombination-Active Region Around Extended Defects in SiliconKittler, M. / Seifert, W. et al. | 1995
- 1129
-
Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski SiliconTerashima, K. / Ikarashi, T. / Ono, H. / Tajima, M. et al. | 1995
- 1135
-
Positron Lifetime in Si MultivacanciesSaito, M. / Oshiyama, A. et al. | 1995
- 1141
-
Frenkel Defects in Low Temperature e-Irradiated Ge and Si Investigated by X-Ray DiffractionBausch, S. / Zillgen, H. / Ehrhart, P. et al. | 1995
- 1147
-
On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350CTrauwaert, M.-A. / Vanhellemont, J. / Maes, H. E. / Van Bavel, A.-M. et al. | 1995
- 1153
-
Defects in NTD MCZ Si Doped with MagnesiumTkacheva, T. / Petrov, G. / Shabalin, E. / Golubev, V. et al. | 1995
- 1159
-
Irradiation Temperature Dependence of Residual Defects in 17 MeV-Proton Bombarded SiliconAmekura, H. / Kishimoto, N. / Kono, K. / Saito, T. et al. | 1995
- 1165
-
Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation SpectroscopyFujinami, M. / Hayashi, S. et al. | 1995
- 1171
-
Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron MicroscopyMuto, S. / Takeda, S. / Hirata, M. et al. | 1995
- 1177
-
A Positron Lifetime Study of Defects in Plastically Deformed SiliconKawasuso, A. / Suezawa, M. / Hasegawa, M. / Yamaguchi, S. et al. | 1995
- 1183
-
Increase of Electrical Activity of Dislocations in Si during Plastic DeformationKononchuk, O. / Orlov, V. / Feklisova, O. / Yakimov, E. et al. | 1995
- 1189
-
Electronic States Associated with Straight Dislocations in p-Type Silicon Studied by Means of Electric-Dipole Spin ResonanceKveder, V. / Sekiguchi, T. / Sumino, K. et al. | 1995
- 1195
-
Energy States of Deformation-Induced Dislocations in Silicon CrystalsKusanagi, S. / Sekiguchi, T. / Sumino, K. et al. | 1995
- 1201
-
Cathodoluminescence Study on Dislocation-Related Luminescence in SiliconSekiguchi, T. / Sumino, K. et al. | 1995
- 1207
-
Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown SiliconShen, B. / Sekiguchi, T. / Sumino, K. et al. | 1995
- 1213
-
Effect of Transition Metal Impurities on the Photoluminescence of Deformed Si CrystalOkuyama, T. / Suezawa, M. / Yonenaga, I. / Sumino, K. et al. | 1995
- 1219
-
New Effect of Interaction between Moving Dislocation and Point Defects in SiliconEremenko, V. G. / Fedorov, A. V. et al. | 1995
- 1225
-
Computer Simulation Study on Dislocation Motion in SemiconductorsMasuda-Jindo, K. / Aoki, M. / Horsfield, A. P. / Pettifor, D. G. et al. | 1995
- 1231
-
Scratch-Related Effects on Silicon SurfaceShreter, Y. G. / Rebane, Y. T. / Tarhin, D. V. / Cherns, D. et al. | 1995
- 1237
-
Study of Electron Irradiation-Induced Defects of 3c-SiC and Diamond by Ultra-High Voltage Electron MicroscopyOshima, R. / Nie, C. Y. / Komatsu, M. / Mori, H. et al. | 1995
- 1243
-
Study on the Irradiation Induced Defects in 6H-SiCHayashi, N. / Watanabe, H. / Sakai, K. / Kuriyama, K. et al. | 1995
- 1249
-
Vacancy Type Defects in GaAs after Electron Irradiation Studied by Positron Lifetime SpectroscopyPolity, A. / Nagel, C. / Krause-Rehberg, R. et al. | 1995
- 1255
-
Ga-Vacancies and As~G~a-Antisites in Electron Irradiated GaAsHausmann, H. / Ehrhart, P. et al. | 1995
- 1261
-
Frenkel Pairs and P~I~n Antisites in Low Temperature Electron Irradiated InPHausmann, H. / Ehrhart, P. et al. | 1995
- 1267
-
Generation of Point Defects during Plastic Deformation of InPLeipner, H. S. / Krause-Rehberg, R. / Huebner, C. et al. | 1995
- 1273
-
Category II and Category III Defects in 200 keV Fe Implanted InPFrigeri, C. et al. | 1995
- 1279
-
Clustering Process of Point Defects in GaP Studied by Transmission Electron MicroscopyOhno, Y. / Takeda, S. / Hirata, M. et al. | 1995
- 1285
-
Hg Vacancies in Hg~1~-~xCd~xTe Studied by Positron AnnihilationKrause-Rehberg, R. / Abgarjan, T. / Polity, A. / Neubert, M. et al. | 1995
- 1291
-
ESR Study of a-Ge~1~-~xN~x Prepared by Magnetron SputteringYokomichi, H. et al. | 1995
- 1297
-
First Principles Investigation of Vacancy Oxygen Defects in SiEwels, C. P. / Jones, R. / Oeberg, S. et al. | 1995
- 1303
-
Oxygen Complexing with Group II Impurities in SiliconDaly, S. E. / McGlynn, E. / Henry, M. O. / Campion, J. D. et al. | 1995
- 1309
-
Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen DimersMcQuaid, S. A. / Newman, R. C. / Mu�oz, E. et al. | 1995
- 1315
-
Effect of Carbon on Thermal Double Donor Formation in SiliconMurin, L. I. / Markevich, V. P. et al. | 1995
- 1321
-
Anomalous Fast Annihilation of Thermal Donors in Carbon-Rich SiliconKamiura, Y. / Maeda, T. / Yamashita, Y. / Hashimoto, F. et al. | 1995
- 1327
-
Ab Initio Total Energy Calculation and the Hyperfine Interactions of Iron-Acceptor Pairs in SiliconWeihrich, H. / Overhof, H. et al. | 1995
- 1333
-
The Structure and Bonding of Iron-Acceptor Pairs in SiliconZhao, S. / Assali, L. V. C. / Kimerling, L. C. et al. | 1995
- 1339
-
Ab Initio Study on Fe-Acceptor Pairing in SiliconSugimoto, M. / Seki, A. et al. | 1995
- 1345
-
Photo-Induced Iron Atom Motion of Iron-Acceptor Pairs in SiliconSakauchi, S. / Suezawa, M. / Sumino, K. et al. | 1995
- 1351
-
Recombination-Enhanced Migration of Interstitial Iron in SiliconNakashima, H. / Sadoh, T. / Tsurushima, T. et al. | 1995
- 1357
-
The Origin of the Low-Spin Ground State for Trigonal Fe~i-Au~S~i and Fe~1-Ag~S~i Pairs in SiliconOverhof, H. / Weihrich, H. et al. | 1995
- 1363
-
The Atomic Structure of Mn~4 Clusters in SiliconOverhof, H. et al. | 1995
- 1369
-
Perturbed Angular Correlation Study of Impurities Interaction in SiHanada, R. / Shinozuka, T. / Fujioka, M. et al. | 1995
- 1375
-
TDS and RBS Studies of Ar Implanted to SiHanada, R. / Saito, S. / Nagata, S. / Yamaguchi, S. et al. | 1995
- 1381
-
Reactions between Point Defects in Silicon Doped with GermaniumKhirunenko, L. I. / Shakhovtsov, V. I. / Shumov, V. V. / Yashnik, V. I. et al. | 1995
- 1385
-
Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in SiKhirunenko, L. I. / Shakovtsov, V. I. / Yashnik, V. I. et al. | 1995
- 1389
-
Surface Recombination in SemiconductorsLanger, J. M. / Walukiewicz, W. et al. | 1995
- 1395
-
Reactivation Kinetics of Lithium-Passivated Acceptors in GaAsLeosson, K. / Yang, B. H. / Gislason, H. P. et al. | 1995
- 1401
-
Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias AnnealingWada, K. / Nakanishi, H. / Kimerling, L. C. et al. | 1995
- 1407
-
Mechanism of Deep Penetration of Plasma-Induced Defects in GaAs: Minority Carrier Injection EffectNakanishi, H. / Wada, K. et al. | 1995
- 1413
-
Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium CrystalsBykovsky, V. A. / Dolgikh, N. I. / Emtsev, V. V. / Haller, E. E. et al. | 1995
- 1419
-
PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe ^7^7Br(^7^7Se)Wehner, M. / Friedsam, P. / Vianden, R. / Jahn, S. et al. | 1995
- 1425
-
Scanning Tunneling Spectroscopic Studies of GaAs Doped with SiKarpierz, K. / Suezawa, M. / Wawro, A. / Kasuya, A. et al. | 1995
- 1431
-
Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grown GaAs CrystalOtoki, Y. / Sahara, M. / Shibata, M. / Kuma, S. et al. | 1995
- 1437
-
Optically Induced Anneal of GaAs and AlGaAs LayersAbramov, A. V. / Deryagin, N. G. / Deryagin, A. G. / Kuchinsciy, V. I. et al. | 1995
- 1443
-
Electron-Irradiation Induced Defects in Fe-Doped Semi-Insulating InPKuriyama, K. / Sakai, K. / Kato, T. / Iijima, T. et al. | 1995
- 1449
-
Deformation-Induced Defects in GaSbMahony, J. / Tessaro, G. / Mascher, P. / Siethoff, H. et al. | 1995
- 1455
-
Damages in AlGaAs/GaAs Heterostructures Induced by keV-Electron-Beam IrradiationWada, T. / Kanayama, T. / Tada, T. / Wang, X.-L. et al. | 1995
- 1461
-
TEM Investigation of Point Defect Interactions in II-VI CompoundsLoginov, Y. Y. / Brown, P. D. / Humphreys, C. J. et al. | 1995
- 1467
-
Athermal Motion of Donors under Ultrasound In CdS CrystalsSheinkman, M. K. / Borkovskaya, L. V. / Dzhymaev, B. R. / Drozdova, I. A. et al. | 1995
- 1471
-
Chemical Identification of the Atomic Scale in MBE-Grown III-V Alloy SemiconductorsKoenraad, P. M. / Johnson, M. B. / Pfister, M. / Salemink, H. W. M. et al. | 1995
- 1481
-
Positron-Annihilation 2D-ACAR Study of Divacancy and Vacancy-Oxygen Pairs in SiHasegawa, M. / Chiba, T. / Kawasuso, A. / Akahane, T. et al. | 1995
- 1491
-
Defect Studies with Isotopically Designed SemiconductorsHaller, E. E. et al. | 1995
- 1497
-
The Chemical Identification of Defect Impurities Using Radioactive IsotopesDaly, S. E. / Henry, M. O. / Frehill, C. A. / Freitag, K. et al. | 1995
- 1503
-
Radioactive Isotopes in Photoluminescence Experiments: Identification of Defect LevelsMagerle, R. / Burchard, A. / Kerle, T. / Pfeiffer, W. et al. | 1995
- 1509
-
Electrical Detection of Electron Paramagnetic Resonance: Studies of the Mechanism of the Spin-Dependent Recombination ProcessGreulich-Weber, S. / Stich, B. / Spaeth, J.-M. et al. | 1995
- 1515
-
The Bending of Si Crystals as a Means to Determine the Orientation of Defects in SiVan Bavel, A.-M. / Degroote, S. / Vantomme, A. / Stesmans, A. et al. | 1995
- 1521
-
Novel Very Slow Photoluminescence Processes at Transition Metal Ions in III-V SemiconductorsThonke, K. / Baier, T. / Hamann, J. / Scheerer, O. et al. | 1995
- 1527
-
Frenkel Pairs in InSb Induced by Neutrino Recoil and Observed by Moessbauer SpectroscopyWende, L. / Sielemann, R. / Weyer, G. et al. | 1995
- 1531
-
High Sensitivity Detection of Silicon Surface Reactions by Photoconductance DecayNorga, G. J. / Black, M. R. / Black, K. A. / M'Saad, H. et al. | 1995
- 1537
-
New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon p-n Junctions and DiodesVlasenko, L. S. / Vlasenko, M. P. et al. | 1995
- 1543
-
Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic FieldsGanichev, S. D. / Mayerhofer, B. / Yassievich, I. N. / Diener, J. et al. | 1995
- 1547
-
Raman Image Study of Defects in Ion-Implanted and Post-Annealed SiliconMizoguchi, K. / Nakashima, S. / Harima, H. / Hara, T. et al. | 1995
- 1553
-
Determination of High Relative Deep Level Concentrations in DLTSKotereva, T. V. / Kasatkin, A. P. / Shmagin, V. B. et al. | 1995
- 1559
-
Generation of Ultra-High Acceleration Field for New Extreme Condition ScienceMashimo, T. / Okazaki, S. et al. | 1995
- 1563
-
Phonon Spectroscopy of Low-Energy Excitations of Defects in SemiconductorsLassmann, K. et al. | 1995
- 1571
-
Local Vibrational Modes of 3d Elements in Wurtzite Type ZnO and GaN CrystalsThurian, P. / Kaczmarczyk, G. / Siegle, H. / Heitz, R. et al. | 1995
- 1577
-
Anharmonicity of the C~A~s Local Oscillator in Gallium ArsenideAlt, H. C. et al. | 1995
- 1583
-
Calculation of Local Vibrational Modes at Point Defects in SemiconductorsScherz, U. / Schrepel, C. et al. | 1995
- 1589
-
The Migration of Carbon and Self Interstitials in SiliconMainwood, A. et al. | 1995
- 1595
-
Anomalous Diffusion of Phosphorus in Silicon by Pair Diffusion Model and Decrease in Quasi Vacancy Formation EnergyYoshida, M. et al. | 1995
- 1601
-
Electric-Dipole Spin Resonance of Defects Correlated with the Diffusion of Zn into SiSchroth, H. / App, R. / Koepf, A. / Lassmann, K. et al. | 1995
- 1607
-
Enhanced Diffusion of Impurities into Solids by Electron Beam DopingWada, T. / Fujimoto, H. / Masuda, H. et al. | 1995
- 1613
-
Interstitials in Silicon Produced by Electron Beam Doping (Superdiffusion)Wada, T. / Hagino, T. / Fujimoto, H. / Masuda, H. et al. | 1995
- 1619
-
Electron Energy Dependence of Impurity Concentrations in Semiconductors by Electron Beam Doping (Superdiffusion)Wada, T. / Yasuda, K. / Fujimoto, H. / Masuda, H. et al. | 1995
- 1625
-
Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion)Wada, T. / Fujimoto, H. / Masuda, H. et al. | 1995
- 1631
-
Dopant Diffusion and Stacking Fault in Silicon during Thermal OxidationOkino, T. / Takaue, R. / Onishi, M. et al. | 1995
- 1637
-
Influence of Simultaneously Implanted As^+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into SiliconYokota, K. / Nakamura, T. / Miyashita, F. / Hirai, K. et al. | 1995
- 1643
-
Effects of Background Doping Level on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well StructuresKy, N. H. et al. | 1995
- 1649
-
Study of the Compensating Centres in GaAs:Te by Positron AnnihilationKrause-Rehberg, R. / Dlubek, G. / Polity, A. et al. | 1995
- 1655
-
Time-of-Flight in Lithium-Compensated GaAsIngvarsson, S. P. / Gislason, H. P. et al. | 1995
- 1661
-
The Influence of the Zinc Concentration on the Defect Characteristics of InPMahony, J. / Mascher, P. et al. | 1995
- 1667
-
Influence of Intrinsic Defects on the Electronic Structure of Non-Stoichiometric CuInS~2 Chalcopyrite SemiconductorsYamamoto, T. / Katayama-Yoshida, H. et al. | 1995
- 1673
-
Defects in Porous Silicon: A Study with Optical and Spin Resonance MethodsHofmann, D. M. / Meyer, B. K. / Christmann, P. / Wimbauer, T. et al. | 1995
- 1679
-
Oxygen Related Defect Centers: The Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous SiliconProkes, S. M. / Carlos, W. E. et al. | 1995
- 1683
-
Review of the Influence of Micro Crystal Defects in Silicon Single Crystals on Gate Oxide IntegrityFusegawa, I. / Takano, K. / Kimura, M. / Fujimaki, N. et al. | 1995
- 1691
-
Fundamentals of Point Defect Aggregation and Dissolution Phenomena of Crystal Originated Defects in Czochralski SiliconWijaranakula, W. et al. | 1995
- 1697
-
Nature of D-Defect in CZ Silicon: D-Defect Dissolution and D-Defect Related T.D.D.BPark, J.-G. / Jung, J.-K. / Cho, K.-C. / Rozgonyi, G. A. et al. | 1995
- 1707
-
Relationship between Grown-in Defects and Thermal History during CZ Si Crystal GrowthTakano, K. / Kitagawa, K. / Iino, E. / Kimura, M. et al. | 1995
- 1713
-
Growth Parameters Determining the Type of Grown-in Defects in Czochralski Silicon CrystalsHourai, M. / Kajita, E. / Nagashima, T. / Fujiwara, H. et al. | 1995
- 1719
-
Effect of Magnetic Field and Heat Treatment on the Grown-in Defects in MCZ Si Single CrystalsTkacheva, T. M. / Petrov, G. N. / Datsenko, L. I. et al. | 1995
- 1725
-
Annealing Behavior of a Light Scattering Tomography Detected Defect near the Surface of Si WafersFurukawa, J. / Iwaoka, N. / Furuya, H. et al. | 1995
- 1731
-
Influence of Point Defect Concentration in Growing CZ-Si on the Formation Temperature of the Defects Affecting Gate Oxide IntegrityIwasaki, T. / Harada, H. / Haga, H. et al. | 1995
- 1737
-
Generation of Oxidation Induced Stacking Faults in CZ Silicon WafersSueoka, K. / Akatsuka, M. / Nishihara, K. / Yamamoto, T. et al. | 1995
- 1743
-
Relation between Minute Lattice Strain and Anomalous Oxygen Precipitation in a Czochralski-Grown Silicon CrystalKimura, S. / Ikarashi, T. / Tanikawa, A. / Ishikawa, T. et al. | 1995
- 1749
-
Photoluminescence due to Oxygen Precipitates Distinguished from the D Lines in Annealed SiTajima, M. / Tokita, M. / Warashima, M. et al. | 1995
- 1755
-
Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Light Scattering and Preferential Etching TechniquesVanhellemont, J. / Kissinger, G. / Graef, D. / Kenis, K. et al. | 1995
- 1761
-
Microdefects in Nitrogen Doped FZ Silicon Revealed by Li^+ DriftingKnowlton, W. B. / Walton, J. T. / Lee, J. S. / Wong, Y. K. et al. | 1995
- 1767
-
Influence of Al Doping on Deep Levels in MBE GaAsQurashi, U. S. / Zafar Iqbal, M. / Baber, N. / Andersson, T. G. et al. | 1995
- 1773
-
Deep Donor-Acceptor Correlations in Low Temperature GaAsKorona, K. P. / Kaminska, M. / Baranowski, J. M. et al. | 1995
- 1779
-
Dislocation Reduction of GaAs and AlGaAs on Si Substrate for High Efficiency Solar CellSoga, T. / Yang, M. / Kato, T. / Jimbo, T. et al. | 1995
- 1785
-
Spatial Distribution of Microdefects around Dislocations in Si-Doped GaAsToba, R. / Warashina, M. / Tajima, M. et al. | 1995
- 1791
-
Study of the Dislocation Atmospheres in n-Type GaAs by DSL Photoetching, EBIC and Microraman MeasurementsMartin, P. / Jimenez, J. / Frigeri, C. / Weyher, J. et al. | 1995
- 1797
-
Study of Gallium and Antimony Cluster Formation in GaSb Bulk Crystals Grown from Nonstoichiometric MeltsBert, N. A. / Chaldyshev, V. V. / Kunitsyn, A. E. / Milvidskaya, A. G. et al. | 1995
- 1801
-
TEM Evaluation of Ordered and Modulated Structures in MBE-Grown InAlAs Crystals on (110)InPUeda, O. / Nakata, Y. / Muto, S. et al. | 1995
- 1807
-
SF~6/O~2 and CF~4/O~2 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of OxygenBuyanova, I. A. / Henry, A. / Monemar, B. / Lindstroem, J. L. et al. | 1995
- 1813
-
Measurements of Polishing-Induced Residual Damages in Silicon Wafers Using Noncontact Photoconductivity Amplitude TechniqueOgita, Y. / Nakano, M. / Masumura, H. et al. | 1995
- 1817
-
Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon WafersDaio, H. / Yakushii, K. / Buczkowski, A. / Shimura, F. et al. | 1995
- 1823
-
Transmission Electron Microscopy of Lattice Defects in CZ-Silicon Wafer Formed by Two-Stage AnnealingIshikawa, S. / Matsushita, M. / Shimomura, J. et al. | 1995
- 1829
-
Rhombic Aggregation of Dislocations in CZ-Si CrystalMinowa, K. / Isomae, S. / Kitano, M. et al. | 1995
- 1835
-
Study of Near-Surface Microdefects in Czochralski-Si Wafers after a CMOS Thermal ProcessKitagawara, Y. / Aihara, K. / Oka, S. / Takenaka, T. et al. | 1995
- 1841
-
Subsurface Damage in Single Diamond Tool Machined Si WafersMchedlidze, T. R. / Yonenaga, I. / Sumino, K. et al. | 1995
- 1847
-
Interface Defects of Bonded Silicon WafersReiche, M. / Tong, Q.-Y. / Goesele, U. / Heydenreich, J. et al. | 1995
- 1853
-
Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power DevicesGrekhov, I. V. / Argunova, T. S. / Gutkin, M. Y. / Kostina, L. S. et al. | 1995
- 1859
-
Oxygen Precipitation in CZ Silicon Crystals Contaminated with IronJablonski, J. / Shen, B. / Mchedlidze, T. R. / Imai, M. et al. | 1995
- 1865
-
Evaluation Method of Precipitated Oxygen Concentration in Low Resistivity Silicon Wafers Using X-Ray DiffractionTakeno, H. / Mizuno, M. / Ushio, S. / Takenaka, T. et al. | 1995
- 1871
-
Precipitates in Antimony Implanted SiliconKikuchi, Y. / Uesugi, F. / Kase, M. / Yoshida, M. et al. | 1995
- 1875
-
Secondary Defects and Deep Levels in n-Si Induced by High Energy P Ion ImplantationTatsukawa, S. / Nakahara, Y. / Matsumoto, S. et al. | 1995
- 1881
-
High Energy Si, Zn and Ga Ion Implantation into GaAs on SiTamura, M. / Saitoh, T. et al. | 1995
- 1887
-
Local Structure Analysis around Arsenic Implanted into Silicon by XAFS TechniqueHorii, Y. / Kikuchi, Y. / Kase, M. / Komiya, S. et al. | 1995
- 1891
-
Effects of Si~3N~4 Films on Diffusion of Boron and Extended Defects in Silicon during Post-Implantation AnnealingZaitsu, Y. / Osada, K. / Shimizu, T. / Matsumoto, S. et al. | 1995
- 1897
-
Photoluminescence Defect Diagnostics in Poly-Si Thin FilmsOstapenko, S. S. / Savchuk, A. U. / Nowak, G. / Lagowski, J. et al. | 1995
- 1903
-
DLTS of Polysilicon Emitter Solar CellsParton, D. P. / Markvart, T. / Ashburn, P. / Carter, J. C. et al. | 1995
- 1909
-
Photoluminescence Study on Point Defects in SIMOX Buried SiO~2 FilmSeol, K. S. / Ieki, A. / Ohki, Y. / Nishikawa, H. et al. | 1995
- 1915
-
Spin-Dependent Transport in SiC and III-V Semiconductor DevicesReinacher, N. M. / Brandt, M. S. / Stutzmann, M. et al. | 1995
- 1923
-
Room Temperature Defect Etching of III-V Compounds and Alloys Grown on Si Substrate Using Hydrogen Fluoride and Nitric AcidNishikawa, H. / Soga, T. / Jimbo, T. / Umeno, M. et al. | 1995
- 1927
-
ODMR Investigation of Near-Surface Damage Induced by Dry-Etching Process Using GaAs/AlAs Quantum Well StructuresMochizuki, Y. / Mizuta, M. / Mochizuki, A. et al. | 1995
- 1933
-
Novel Technique for Reliable AlGaAs/GaAs Light Emitting Diodes on Si Using GaAs Islands Active RegionsHasegawa, Y. / Egawa, T. / Jimbo, T. / Umeno, M. et al. | 1995
- 1939
-
Thermal and Athermal Migration of Ion-Irradiation Defects in Al~0~.~3Ga~0~.~7As/GaAs HeterostructuresKanayama, T. / Wada, T. / Sugiyama, Y. et al. | 1995
- 1943
-
Characterization of Mg+F, Mg+Ar Dual Ion Implanted Al~xGa~1~-~xAs (0x0.75) LayersHara, N. / Suehiro, H. / Kuroda, S. et al. | 1995
- 1949
-
Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scanning Tunnelling MicroscopyGwo, S. / Miwa, S. / Ohno, H. / Fan, J.-F. et al. | 1995
- 1955
-
Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAsGoodman, S. A. / Auret, F. D. / Le Clerc, Y. et al. | 1995
- 1961
-
Optical and Electrical Characterisation of He Plasma Sputtered n-GaAsMurtagh, M. / Hildebrandt, S. / Herbert, P. A. F. / O'Connor, G. M. et al. | 1995
- 1967
-
Contamination and Cleaning of GaAs-(100) SurfacesGutjahr, K. / Reiche, M. / Goesele, U. et al. | 1995
- 1973
-
Characterization of Electron Traps in n-InP Induced by Hydrogen PlasmaSakamoto, Y. / Sugino, T. / Matsuda, K. / Shirafuji, J. et al. | 1995
- 1979
-
Gettering of Transition Metals in Multicrystalline SiliconMcHugo, S. A. / Hieslmair, H. / Weber, E. R. et al. | 1995
- 1985
-
Substitutional Gettering of Platinum by Diffusion into Ion-Beam Damaged SiliconNielsen, K. B. / Holm, B. et al. | 1995
- 1991
-
Gettering of Iron Using Electrically Inactive Boron Doped LayerTomita, H. / Saito, M. / Yamabe, K. et al. | 1995
- 1997
-
Ab Initio Calculation for g-Values of ESR Centers in a-Si:HKatagiri, H. et al. | 1995