-X electron tunneling in AlAs/GaAs/AlAs double-barrier quantum-well heterostructure (Englisch)
- Neue Suche nach: Kim, G.
- Neue Suche nach: Kim, G.
- Neue Suche nach: Woo, J.-C.
- Neue Suche nach: Park, Y. S.
In:
Compound semiconductors
;
1235-1240
;
1996
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:-X electron tunneling in AlAs/GaAs/AlAs double-barrier quantum-well heterostructure
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Beteiligte:
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Kongress:International symposium, Compound semiconductors ; 1995
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Erschienen in:Compound semiconductors ; 1235-1240CONFERENCE SERIES- INSTITUTE OF PHYSICS ; 145 ; 1235-1240
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Verlag:
- Neue Suche nach: Institute of Physics
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Erscheinungsdatum:01.01.1996
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Format / Umfang:6 pages
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Anmerkungen:Held on Cheju Island, Korea
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Evolution of compound semiconductor microelectronics for nanoelectronicsSugano, T. et al. | 1996
- 7
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Optimization of GaAs-based HEMTs for microwave and millimeter wave IC applicationsGrave, T. et al. | 1996
- 13
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Photonics: An information age technologyLeheny, R. F. et al. | 1996
- 19
-
Present and future of group III nitride semiconductorsAkasaki, I. / Amano, H. et al. | 1996
- 23
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Gap between microelectronics and nanoelectronicsIkoma, T. / Hiramoto, T. / Hirakawa, K. et al. | 1996
- 29
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One million transistor circuits in GaAsTomasetta, L. R. et al. | 1996
- 33
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Cubic phase GaN: correlation between growth kinetics and material qualityBrandt, O. / Yang, H. / Ramsteiner, M. / Menniger, J. et al. | 1996
- 39
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Molecular beam epitaxy with gaseous sources: growth and applications of mixed group V compounds and selective-area growthTu, C. W. / Mei, X. B. / Li, N. Y. / Dong, H. K. et al. | 1996
- 45
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The dependence on growth temperatures of the electrical and structural properties of GaSb/InAs single quantum well structures grown by MBEChung, S. J. / Norman, A. G. / Yuen, W. T. / Malik, T. et al. | 1996
- 51
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Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):SiDaeweritz, L. / Schuetzenduebe, P. / Stahrenberg, K. / Maier, M. et al. | 1996
- 57
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Lateral compositional change of InAlAS on non-planar substrates by molecular beam epitaxySugaya, T. / Nakagawa, T. / Sugiyama, Y. et al. | 1996
- 63
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Hydrogenation effect in nitrogen doped ZnSe films grown by molecular beam epitaxyKim, M. D. / Oh, E. S. / Kim, J. R. / Jeong, H. D. et al. | 1996
- 69
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Real time in-situ thickness control of Fabry Perot cavities and thin quantum wells in MBE by ellipsometryKuo, C. H. / Boonzaayer, M. D. / Daryanani, S. / Maracas, G. N. et al. | 1996
- 75
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1.55 m (GaIn)(AsP)-MQW-laser diodes grown by chemical beam epitaxyTraenklee, G. / Mueller, R. / Nutsch, A. / Torabi, B. et al. | 1996
- 79
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Facet formation and selective area epitaxy of InGaAs by chemical beam epitaxy using unprecracked monoethylarsineKim, S.-B. / Park, S.-J. / Ro, J.-R. / Lee, E.-H. et al. | 1996
- 85
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Molecular beam epitaxy and mobility enhancement of In~xGa~1~-~xAs/In~0~.~5~2Al~0~.~4~8As/InP HEMT structureRoh, D.-W. / Lee, H.-G. / Lee, J.-J. / Pyun, K.-E. et al. | 1996
- 91
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Substrates orientation dependence of lateral composition modulation in (GaP)~n(InP)~n strained short period superlattices grown by gas source MBEKim, S. J. / Asahi, H. / Ishibashi, T. / Gonda, S. et al. | 1996
- 97
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The influence of surface reconstructions on the GaAs/AlAs interface formation by MBEMoshegov, N. T. / Sokolov, L. V. / Toropov, A. I. / Bakarov, A. K. et al. | 1996
- 103
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Growth and characterization of diluted magnetic semiconductor Zn~1~-~xMn~xSe/ZnSe strained-layer superlatticeJin, C. X. / Ling, Z. / Yu, G. C. / Wang, J. et al. | 1996
- 109
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Selective epitaxial growth of Si~1~-~xGe~x on SiO~2-patterned Si substrate using elemental source molecular beam epitaxyYun, S. J. / Lee, S.-C. / Lee, J.-J. / Nam, K.-S. et al. | 1996
- 115
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A RHEED study of the growth of InAs on InAs(111)ANomura, T. / Kamiya, I. / Fahy, M. R. / Neave, J. H. et al. | 1996
- 121
-
Atomic force microscopy and growth modeling of GaN nucleation layers on (001) GaAs by metalorganic chemical vapor depositionWang, K. / Pavlidis, D. / Singh, J. et al. | 1996
- 127
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Effects of the mask geometry on the selective-area growth by metalorganic chemical vapor depositionItagaki, T. / Takemi, M. / Takiguchi, T. / Kimura, T. / Mihashi, Y. / Takamiya, S. et al. | 1996
- 127
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Effects of the mask geometry on the selective-area growth by matalorganic chemical vapor depositionItagaki, T. / Takemi, M. / Takiguchi, T. / Kimura, T. et al. | 1996
- 133
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Production of P-type GaN in a multi-wafer-rotating-disc reactorYuan, C. / Walker, R. / Salagaj, T. / Gurary, A. et al. | 1996
- 137
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Lateral growth rate enhancement on patterned GaAs substrates with CCl~4 by MOCVDKim, S.-I. / Kim, Y. / Hwang, S.-M. / Kim, M.-S. et al. | 1996
- 143
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The study of the interface between GaAs substrate and the regrowth GaAs layer formed by MBE and MOCVDFujimoto, H. / Tanabe, M. / Tamura, A. et al. | 1996
- 149
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Erbium -doping to InP by OMVPEFujiwara, Y. / Matsubara, N. / Yuhara, J. / Tabuchi, M. et al. | 1996
- 155
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MOVPE growth of compressively strained GaInP/AlGaInP structure with MQBOh, M. / Park, H. / Lee, C. / Lim, G. et al. | 1996
- 161
-
Expitaxial growth and characterization of GaN films on 6-SiC by MOVPENam, O.-H. / Kim, G. / Park, D. / Yoo, J.-B. et al. | 1996
- 167
-
Effect of strain and growth temperature on In incorporation and properties of high power laser diodes in MOVPE grown (In, GA)(As, P)/GaAsBugge, F. / Erbert, G. / Gramlich, S. / Rechenberg, I. et al. | 1996
- 171
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MOVPE growth of (Ga, In)(As, P)/GaAs for high-power laser diodesKnauer, A. / Bugge, F. / Erbert, G. / Oster, A. et al. | 1996
- 177
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Carbon doped GaAs grown by MOVPE using CBr~4Kurpas, P. / Richter, E. / Gutsche, D. / Brunner, F. et al. | 1996
- 183
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MOVPE-grown AlGaInP (411)A-like micro-facets on nonplanar substratesAnayama, C. / Tanahashi, T. et al. | 1996
- 189
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AFM observation of atomically flat heterointerface of GaInAs/InP grown by OMVPESuhara, M. / Nagao, C. / Miyamoto, Y. / Furuya, K. et al. | 1996
- 195
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Properties of GaInP-based materials for UHB-LED production grown in multiwafer planetary reactorsBeccard, R. / Knauf, J. / Lengeling, G. / Schmitz, D. et al. | 1996
- 201
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Novel empirical expression and kinetic analysis for the incorporation of As and P in InGaAsP grown by metal-organic vapor phase epitaxyLee, S. W. / Lim, J. S. / Kim, H. M. et al. | 1996
- 205
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Study of HgCdTe/CdZnTe grown by isothermal vapor phase epitaxyLee, T. S. / Chang, J. M. / Song, W. S. / Kim, S. U. et al. | 1996
- 209
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Epitaxial growth of 3C-SiC(111) thin film on Si wafter by rapid thermal chemical vapor deposition using tetramethylsilaneSeo, Y. H. / Nahm, K. S. / Suh, E.-K. / Lee, Y. H. et al. | 1996
- 215
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GaN films prepared by hot-wall epitaxyYamamoto, E. / Ishino, K. / Ohta, M. / Kuwabara, M. et al. | 1996
- 221
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Strain relaxation and crystallographic tilt of compositional graded In~xGa~1~-~xAs and In~xAl~1~-~xAs (0Shieh, J.-L. / Chyi, J.-I. / Pan, J.-W. / Lin, R. M. et al. | 1996
- 227
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Distribution of As atoms in InP/InPAs/InP and InP/InGaAs/InP hetero-structures measured by x-ray CTR scatteringTabuchi, M. / Fujibayashi, K. / Yamada, N. / Hagiwara, K. et al. | 1996
- 233
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Applications of liftoff technologyFan, J. C. C. et al. | 1996
- 239
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Formation of high electrical resistance region in (InAs)(/AlSb) superlattice by Ga focused ion beam implantationKim, S. G. / Asahi, H. / Gonda, S. / Yu, S. J. et al. | 1996
- 245
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Mg-based dual ion implantation technique for high performance p-channel AlGaAs/InGaAs heterostructure FETsHara, N. / Shima, M. / Suehiro, H. / Kuroda, S. et al. | 1996
- 251
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Intermixing effect of (InAs)/(AlSb) superlattice by Ga ion implantationKim, S. G. / Asahi, H. / Gonda, S. / Yu, S. J. et al. | 1996
- 257
-
Evidence for introduction of extra Si from PECVD SiN~x cap during post-implantation annealing of implanted Si due to ion implantation damage in GaAsLee, K. H. / Lee, J.-J. / Pyun, K. E. et al. | 1996
- 263
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Breakdown mechanism of focused-ion-beam-implantation-isolations in a GaAs/AlGaAs heterostructureHwang, S. W. / Lezec, H. J. / Sakamoto, T. / Nakamura, K. et al. | 1996
- 267
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Progress in sulfur passivation of GaAs surfacesWang, X. / Hou, X. et al. | 1996
- 273
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Sulfur passivation for thermal stability enhancement of RuO~2 Schottky contact on compound semiconductorKim, E. K. / Son, M. H. / Lee, H. N. / Kim, Y. T. et al. | 1996
- 279
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Combination of selective etching and AFM imaging for the thickness analysis of AlGaAs/GaAs heterostructuresMueller, S. / Weyher, J. L. / Koehler, K. / Jantz, W. et al. | 1996
- 285
-
Enhanced selectivity in GaAs/AlGaAs selective dry etching in BCl~3+CF~4 plasma by adsorbed C~xF~y precise control of HJFET threshold voltagesTokushima, M. / Hida, H. / Maeda, T. et al. | 1996
- 291
-
Annealing effects on low-temperature GaN layer grown by metalorganic chemical vapor depositionKim, B.-Y. / Choi, Y.-H. / Hong, C.-H. / Kim, S.-H. et al. | 1996
- 295
-
Comparison of AuGe/Ni/Au, AuGe/Pd/Au, and Ti/Pt/Au, WSi/Ti/Pt/Au ohmic contacts to n-type InGaAsPark, S. H. / Park, M. P. / Lee, T.-W. / Song, K. M. et al. | 1996
- 295
-
Comparison of AuGe/Ni/Au, AuGe/Pd/Au, Ti/Pt/Au, and WSi/Ti/Pt/Au ohmic contacts to n-type InGaAsPark, S.H. / Park, M.P. / Lee, T.W. / Song, K.M. / Pyun, K.E. / Park, H.M. et al. | 1996
- 301
-
Direct bonding of lattice-mismatched and orientation-mismatched III-V semiconductor wafers: a step toward establishing "Free-orientation integration"Okuno, Y. / Uomi, K. et al. | 1996
- 301
-
Direct bonding of lattic-mismatched and orientation-mismatched III-V semiconductor wafers: a step toward establishing ' free-orientation integration'Okuno, Y. / Uomi, K. et al. | 1996
- 307
-
Time-resolved photoluminescence study of radiative transition processes in GaP~1~-~xN~x alloysYaguchi, H. / Miyoshi, S. / Aromoto, H. / Saito, H. et al. | 1996
- 313
-
Reciprocal-space analysis of photoluminescence and photoluminescence excitation spectraYoo, S. D. / Aspnes, D. E. / Rhee, S. J. / Ko, H. S. et al. | 1996
- 319
-
Photoluminescence, reflectivity, and Raman study of ZnSe, ZnSSe, and ZnMgSSeOh, E. / Lee, S. D. / Jung, H. D. / Kim, M. D. et al. | 1996
- 325
-
Observation of suppressed thermal broadening of photoluminescence linewidth from flow rate modulation epitaxy grown AlGaAs/GaAs quantum wiresWang, X.-L. / Ogura, M. / Matsuhata, H. / Komori, K. et al. | 1996
- 331
-
Spectroscopic characterization for single quantum well structures of compound semiconductorsShen, W. Z. / Shen, S. C. et al. | 1996
- 337
-
Critical energies of photoreflectance and lineshape analysis of photoluminescence of heavily Si-doped GaAsLee, C. / Lee, N.-Y. / Lee, K.-J. / Park, H. Y. et al. | 1996
- 343
-
Piezoreflectance study of GaAs/AlGaAs digital alloy compositional graded heterostructuresLin, D. Y. / Lin, F. C. / Huang, Y. S. / Qiang, H. et al. | 1996
- 349
-
Birefringence and mode-conversion in ordered GaInP/AlGaInP optical waveguide structuresMoritz, A. / Wirth, R. / Geng, C. / Scholz, F. et al. | 1996
- 355
-
Suppression of degradation in the crystalline quality of InGaAs/(Al)GaAs strained quantum-well structures by increasing the barrier thicknessMiyashita, M. / Karakida, S. / Shima, A. / Kajikawa, Y. et al. | 1996
- 361
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Bound state induced absorption in a QW structureKim, D. W. / Rhee, S. J. / Kim, Y. M. / Ko, H. S. et al. | 1996
- 365
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Fast peak quench of the exciton transition in extremely shallow quantum well structuresPark, S. / Kwon, O. et al. | 1996
- 369
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Electrical and optical characterization of GaSb based diode laser material for 2-4 m applicationsJohnstone, D. K. / Marciniak, M. A. / Yeo, Y. K. / Hengehold, R. L. et al. | 1996
- 375
-
The variation of the structures and excited subband states for the thermal treated GaAs/AlGaAs multiple quantum wellsOh, Y. T. / Kang, T. W. / Hong, C. Y. / Kim, T. W. et al. | 1996
- 387
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Temperature dependence of type-I exciton absorption in type-II CdSe/ZnTe heterostructuresLee, E. H. / Stoltz, S. / Chang, H. C. / Yu, W. Y. et al. | 1996
- 393
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A new method for estimating band parameters in narrow InGaAs/InAlAs quantum wells at room temperatureKotera, N. / Tanaka, K. et al. | 1996
- 397
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Determination of band structure dispersion curves by optical techniquesJones, E. D. / Lyo, S. K. / Klem, J. F. et al. | 1996
- 403
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Strain effect on direct- and indirect-gap band lineups of GaAs~1~-~xP~x/GaP quantum wellsShima, A. / Yaguchi, H. / Onabe, K. / Shiraki, Y. et al. | 1996
- 409
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Enhancement of carrier confinement in pseudomorphic In~xGa~1~-~xAs/GaAs strained quantum wells using interfacial AlAs layersLee, C. D. / Leem, J. Y. / Noh, S. K. et al. | 1996
- 413
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Strain and crystallographic orientation in (11l) (In, Al, Ga)As/GaAs heterostructures: physics and device applicationsTowe, E. / Ramos, P. A. / Henderson, R. H. / McCullum, D. S. et al. | 1996
- 419
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Characterization of lattice-mismatched InGaAs/AlGaAs heterointerface by modified isothermal capacitance transient spectroscopyIzumi, S. / Shimura, T. / Hayafuji, N. / Sonoda, T. et al. | 1996
- 425
-
Interband transitions in Cd~xZn~1~-~xTe/ZnTe strained single quantum well grown by double-well temperature-gradient vapor depositionPark, H. L. / Lee, S. H. / Kim, T. W. et al. | 1996
- 431
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Stress in GaAs ridge waveguides integrated with ZnO piezoelectric transducersKim, H. K. / Almashary, B. A. / Kleemeier, W. / Li, Y. et al. | 1996
- 437
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Confined optical vibration of (311) GaAs/AlAs superlatticesMilekhin, A. / Pusep, Y. / Lubyshev, D. / Preobrazhenskii, V. et al. | 1996
- 443
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Confined AlAs LO phonons in GaAs/AlAs superlatticesTenne, D. A. / Haisler, V. A. / Moshegov, N. T. / Toropov, A. I. et al. | 1996
- 447
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Photoelastic characterization of slip lines generated by thermal processing with ring holderYamada, M. / Fukuzawa, M. / Kawase, T. / Tatsumi, M. et al. | 1996
- 451
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Faraday-Stark electrophotonic effectLee, Z. K. / Heiman, D. / Sundaram, M. / Gossard, A. C. et al. | 1996
- 455
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Sensitive observation of eigen-energy in InGaAs/InAlAs quantum wells by means of Stark-effect induced shift of photocurrentsTanaka, K. / Kotera, N. et al. | 1996
- 459
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Intensity oscillations in the magnetoluminescence of a modulation-doped (Al, Ga)As/GaAs single heterojunctionLee, K.-S. / Lee, E.-H. / Perry, C. H. / Kim, Y. et al. | 1996
- 463
-
Magnetotransport, magneto-optical, and electronic subband studies in In~xGa~1~-~xAs/In~yAl~1~-~yAs one-side-modulation-doped asymmetric double quantum wellsKim, T. W. / Jung, M. / Lee, D. U. / Yoo, K. H. et al. | 1996
- 469
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Exciton formation time measured with magneto-photoluminescenceZhu, J. B. / Suh, E.-K. / Lee, H. J. / Hwang, Y. G. et al. | 1996
- 475
-
Characterization of boron in 6H-SiC using optical absorptionYu, P. W. / Mahalingam, K. / Mitchel, W. C. / Roth, M. D. et al. | 1996
- 487
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Characteristics of group VI element DX centers in InGaPKwon, S. D. / Kwon, H. K. / Choe, B.-D. / Lim, H. et al. | 1996
- 491
-
Dislocation-related etch-pits and deep level in strain relaxed SiGe layersKim, H. S. / Shin, Y. G. / Hwang, Y. T. / Kim, J. Y. et al. | 1996
- 497
-
Electrical properties in Si/Si~1~-~xGe~x/Si p-type modulation doped heterostructuresHwang, Y. T. / Kim, H. S. / Woo, S. J. / Lim, S. H. et al. | 1996
- 501
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Ambipolar diffusion in GaAs/AlGaAs quantum wells with inserted AlAs monolayersFaller, F. / Ohnesorge, B. / Forchel, A. et al. | 1996
- 505
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Optical investigation of InGaAs/GaAs heterointerfacesJeon, H. I. / Jeong, M. S. / Shim, H. W. / Shin, Y. G. et al. | 1996
- 511
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Deep level investigation of bulk and epitaxial 6H-SiC at high temperaturesScofield, J. D. / Yeo, Y. K. / Hengehold, R. L. et al. | 1996
- 517
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Negative photoconductivity of Al~xGa~1~-~xAs:Sn/GaAs modulation-doped heterostructuresPeng, Z. / Saku, T. / Horikoshi, Y. et al. | 1996
- 523
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The anomalous photoconductive decay of carbon doped GaAsIm, H. / Kim, S.-I. / Kim, T.-G. / Son, C.-S. et al. | 1996
- 529
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The effective species for nitrogen doping in ZnSeIto, F. / Hamada, T. / Hariu, T. et al. | 1996
- 535
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Effect of Ge interlayers on threading dislocation behavior in GaAs on SiTamura, M. / Saitoh, T. et al. | 1996
- 541
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Properties of GaAs LEC single crystals grown at different inert gas pressuresSeifert, M. / Rudolph, P. / Neubert, M. / Ulrici, W. et al. | 1996
- 547
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Fermi-level effect on Ga self-diffusion studied using ^6^9GaAs/^6^9Ga^7^1GaAs isotope superlatticeMuraki, K. / Horikoshi, Y. et al. | 1996
- 553
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Some anomalies in the electron transport of Se-doped AlAsLee, B. C. / Cha, S. S. / Shin, Y. G. / Lim, K. Y. et al. | 1996
- 557
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Temperature coefficients of low-field electron mobility in GaAs/AlGaAs heterostructuresNoh, S. K. / Yuk, J. S. / Ihm, G. / Lim, K. Y. et al. | 1996
- 563
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Electron and hole multiplication characteristics in short GaAs PINsPlimmer, S. A. / David, J. P. R. / Lee, T. W. / Rees, G. J. et al. | 1996
- 569
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Impact ionisation coefficients in (Al~xGa~1~-~x)~0~.~5~2In~0~.~4~8PDavid, J. P. R. / Ghin, R. / Hopkinson, M. / Pate, M. A. et al. | 1996
- 575
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The reduction of impact ionization and improvement of device reliability in heterostructure doped-channel FETsYang, M.-T. / Chan, Y.-J. / Chang, M. et al. | 1996
- 581
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An XPS study of novel wide band gap Zn~xSr~1~-~xS semiconductorsLee, S. T. / Kitagawa, M. / Ichino, K. / Kobayashi, H. et al. | 1996
- 587
-
Novel approach to enhance the optical property in AlGaAs and InGaAlP by natural ordering during growthChin, A. / Lin, B. C. / Gu, G. L. / Hsieh, K. Y. et al. | 1996
- 593
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Characterization of semiconductors by laser-generated photocharge voltage spectroscopyPark, N.-C. / Abbate, A. / Das, P. et al. | 1996
- 599
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SiC high power devicesWeitzel, C. E. / Palmour, J. W. / Carter, C. H. / Moore, K. et al. | 1996
- 605
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The fabrication of recessed gate GaN MODFET'sBurm, J. / Schaff, W. J. / Eastman, L. F. / Amano, H. et al. | 1996
- 609
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Ion-implantation into -SiC epilayers and application of high-temperature high-voltage devicesKimoto, T. / Itoh, A. / Inoue, N. / Yaguchi, S. et al. | 1996
- 615
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Technology of GaAs-based MMICs for high temperature applicationsWuerfl, J. / Janke, B. / Thierbach, S. et al. | 1996
- 621
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High power performance InP/InGaAs single HBTsSawdai, D. / Hong, K. / Samelis, A. / Pavlidis, D. et al. | 1996
- 627
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AlGaAs/GaAs HBTs with high FmaxAsbeck, P. M. / Ho, M. C. / Johnson, R. A. et al. | 1996
- 631
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Recent progress in InP-based HBT technologyHafizi, M. et al. | 1996
- 637
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InGaP/GaAs drift HBTs with strained In~xGa~1~-~xAs baseHartmann, Q. J. / Ahmari, D. A. / Fresina, M. T. / Mares, P. J. et al. | 1996
- 643
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Thermal stability and reliability of nonalloyed ohmic contacts on thin base InP/InGaAs/InP HBTsChor, E. F. / Malik, R. J. / Hamm, R. A. / Ryan, R. W. et al. | 1996
- 649
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DC and microwave characteristics of In~0~.~3(Al~xGa~1~-~x)~0~.~7As/In~0~.~3Ga~0~.~7As heterojunction bipolar transistors grown on GaAsHwang, H.-P. / Shieh, J.-L. / Pan, J.-W. / Chou, C.-C. et al. | 1996
- 655
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1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHzShin, J.-H. / Lee, J. / Suh, Y. / Kim, B. et al. | 1996
- 661
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AlGaAs/GaAs heterojunction bipolar transistors with InGaAs etch-stop layerMiyoshi, Y. / Tanaka, S. / Goto, N. / Honjo, K. et al. | 1996
- 667
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Investigation of emitter degradation in heterostructure bipolar transistorsHagley, W. A. / Rutyna, R. / Surridge, R. K. / Xu, J. M. et al. | 1996
- 673
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Thermal analysis of AlGaAs/GaAs heterojunction bipolar transistors including base recombination current effectIhn, B. U. / Lee, J. / Suh, Y. / Kim, B. et al. | 1996
- 679
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SiGe HBTs with very high germanium content in the baseGruhle, A. / Schueppen, A. / Kibbel, H. / Koenig, U. et al. | 1996
- 683
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Piezoelectric effect suppression in GaAs FETs by using Y-shaped gate structuresFukaishi, M. / Tokushima, M. / Wada, S. / Hida, H. et al. | 1996
- 689
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Design and fabrication technologies of a one-chip p-i-n/FET for 155 Mbps local loop applicationsPark, J.-W. / Si, S.-K. / Moon, Y.-B. / Sone, C. S. et al. | 1996
- 695
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A new GaAs BiFET structure using selective MOCVD techniqueShin, H. / Son, J.-H. / Kwon, Y.-S. et al. | 1996
- 699
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Novel sub-quarter micron GaAs MESFET process with WSi sidewall gateUda, T. / Nishii, K. / Fujimoto, K. / Tamura, A. et al. | 1996
- 705
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A 3.3V GaAs power MESFET for digital/analog dual-mode hand-held phoneLee, J.-L. / Maeng, S.-J. / Kim, H. / Mun, J. K. et al. | 1996
- 711
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GaAs MESFET model for the temperature range from 4 K to 625 KYtterddal, Y. / Moon, B. J. / Fjeldly, T. A. / Shur, M. S. et al. | 1996
- 717
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High device performance of ion-implanted WN 0.25 m gate MESFET fabricated using I-line photolithography with application to MMICOh, E.-G. / Yang, J.-W. / Park, C.-S. / Pyun, K.-E. et al. | 1996
- 721
-
Non-uniform light emission from parasitic oscillating GaAs MESFET'sTakahashi, H. / Morikawa, J. / Asano, K. / Nashimoto, Y. et al. | 1996
- 725
-
A physically based high frequency noise model of MESFET's taking static feedback effect into accountHan, J.-H. / Ko, J. / Lee, K. et al. | 1996
- 731
-
WSi gate GaAs MESFET's with shallow channels fabricated by ion implantation through WSi filmsUda, T. / Fujimoto, H. / Nishii, K. / Tamura, A. et al. | 1996
- 737
-
Novel high power GaAs MESFET's with low distortion and high gate-drain breakdown voltageFujimoto, H. / Morimoto, S. / Masato, H. / Tamura, A. et al. | 1996
- 743
-
A 3.3 V GaAs MESFET monolithic driver amplifier for digital/analog dual-mode hand-held phonesKim, M.-G. / Kim, C.-H. / Hwang, I.-G. / Oh, E.-G. et al. | 1996
- 747
-
Fabrication of power MESFETs/Si with a reduced parasitic capacitanceAigo, T. / Takayama, S. / Goto, M. / Ohta, Y. et al. | 1996
- 753
-
Effects of buffer structures on GaAs MESFET'sLee, J.-J. / Kim, D.-W. / Lee, H.-G. / Pyun, K.-E. et al. | 1996
- 757
-
Anomalous behaviors of cut-off frequencies in 0.5 m GaAs power MESFET'sRhee, J.-K. / Lee, I.-H. / Kim, S.-M. et al. | 1996
- 763
-
Microwave characteristics of GaAs MESFET with optical illuminationKim, H. J. / Kim, S. J. / Kim, D. M. / Chung, H. et al. | 1996
- 769
-
Physical processes of effective V-F characteristics for submicrometer GaAs MESFETsYamada, Y. / Takahashi, T. et al. | 1996
- 775
-
Effects of sulfide treatment on the gate voltage swing of InP MISFETs with photo-CVD grown P~3N~5 gate insulatorJo, S. K. / Lee, B. H. / Jeong, M. Y. / Jeong, Y. H. et al. | 1996
- 779
-
Low voltage operated GaAs MISFET using a novel self-alignment technique for power amplifier in mobile communication systemOta, Y. / Nishitsuji, M. / Masato, H. / Morimoto, S. et al. | 1996
- 779
-
Low voltage operated GaAs MISFET using a novel self-alignment technique for power amplifiers in mobile communication systemsOta, Y. / Nishitsuji, M. / Morimoto, S. / Fujimoto, H. et al. | 1996
- 785
-
Detection and mixing of terahertz radiation by two dimensional electronic fluidDyakonov, M. I. / Shur, M. S. et al. | 1996
- 791
-
Photoelectric measurement of interband transitions in fully fabricated pseudomorphic high electron mobility transistorsSchuermeyer, F. / Loehr, J. P. / Sherriff, R. E. / Cerny, C. et al. | 1996
- 797
-
Metamorphic In(GaAl)As-HEMTs on GaAs-substratesKraus, S. / Chertouk, M. / Heiss, H. / Xu, D. et al. | 1996
- 803
-
Device structure and substrate effects on drain lag phenomena in HJFETsNogome, M. / Kunihiro, K. / Ohno, Y. et al. | 1996
- 809
-
Noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with wide head T-shaped gate fabricated by optimized dose split e-beam lithographyLee, J.-H. / Yoon, H.-S. / Choi, S.-S. / Park, C.-S. et al. | 1996
- 813
-
Single low-voltage operation of power heterojunction FETs for digital cellular applicationsIwata, N. / Inosako, K. / Kuzuhara, M. et al. | 1996
- 817
-
In~0~.~5~2(Al~xGa~1~-~x)~0~.~4~8As/In~0~.~5~3Ga~0~.~4~7As(0 x 1) heterostructures and its application on HEMTsWu, C.-S. / Chan, Y.-J. / Chen, C.-H. / Shieh, J.-L. et al. | 1996
- 823
-
Submicron PHEMT with a dielectric interface gateGong, C.-S. / Yoon, J. W. / Lee, J. W. et al. | 1996
- 829
-
Al-free GaInP/InGaAs MODFETs on GaAs grown by OMVPE with f~T > 1000 GHzPereiaslavets, B. / Bachem, K. / Braunstein, J. / Burm, J. et al. | 1996
- 835
-
AlInAs/GaInAs/AlInAs MODFETs fabricated on InP and on GaAs with metamorphic buffer - a comparisonFink, T. / Haupt, M. / Koehler, K. / Raynor, B. et al. | 1996
- 839
-
Controlling dissipation in quantum devicesLeburton, J.-P. / Lyanda-Geller, Y. et al. | 1996
- 845
-
Magnetic-field-induced tunneling and minigap transport in double quantum wellsLyo, S. K. / Simmons, J. A. / Harff, N. E. / Eiles, T. M. et al. | 1996
- 851
-
Resonant tunneling in asymmetric triple barrier diodesJo, J. / Wang, K. L. et al. | 1996
- 855
-
Anomalously large Stokes and anti-Stokes real space charge transfer between quantum wells separated by thick alloy barriers: beyond the mean field approachKim, D. S. / Ko, H. S. / Kim, Y. M. / Rhee, S. J. et al. | 1996
- 861
-
Theoretical study of electron tunneling time through a single/double barrier(s), and the effect of wave packet spreadLee, B. / Lee, W. et al. | 1996
- 867
-
Correlation effects on the single electron tunneling through a quantum dot in magnetic fieldsAhn, K.-H. / Oh, J. H. / Chang, K. J. et al. | 1996
- 871
-
A novel resonant tunneling diode with single-peak I-V characteristicsArai, K. / Yamamoto, M. et al. | 1996
- 877
-
GaAs surface tunnel transistors with a symmetric source-to-drain structureBaba, T. / Uemura, T. et al. | 1996
- 883
-
Effects of photogenerated carriers on oscillation frequency in resonant tunneling structureChu, H. Y. / Lee, E.-H. et al. | 1996
- 887
-
Quantum Hall effect devices of delta-doped Al~0~.~2~5Ga~0~.~7~5As/In~0~.~2~5Ga~0~.~7~5As/GaAs pseudomorphic heterostructures grown by LP-MOCVDLee, J. S. / Ahn, K. H. / Jeong, Y. H. et al. | 1996
- 893
-
Quantum Hall effect in GaAs/AlGaAs heterostructures: its breakdown due to currentKawaji, S. et al. | 1996
- 899
-
2D-1D crossover behaviors in low-field magnetrotransportNoh, S. K. / Lim, K. Y. / Ihm, G. / Lee, S. J. et al. | 1996
- 905
-
Two different types of the h/e oscillation in an AlGaAs/GaAs-based mesoscopic ring structureLee, S. / Park, K. W. / Shin, M. / Lee, E.-H. et al. | 1996
- 909
-
Aharonov-Bohm oscillations beating and universal conductance fluctuations in a single-mode quantum interferometerBykov, A. A. / Kvon, Z. D. / Ol'shanetskii, E. B. et al. | 1996
- 915
-
Optical-microwave signal mixing in a GaAs uniplanar ring resonatorLee, J.-C. / Taylor, H. F. / Chang, K. et al. | 1996
- 919
-
Coherent multiatomic step formation on GaAs (001) vicinal surfaces by MOVPE and its application to quantum well wiresFukui, T. / Hara, S. / Ishizaki, J. / Ohkuri, K. et al. | 1996
- 925
-
Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire structures grown on V-grooved GaAs substratesPan, W. / Yaguchi, H. / Onabe, K. / Ito, R. et al. | 1996
- 931
-
Magneto-excitons and Landau level states in quantum wire superlatticesWeman, H. / Potemski, M. / Miller, M. S. / Lazzouni, M. E. et al. | 1996
- 935
-
Fabrication and optical characteristics of GaAs double-coupled quantum-wires on V-grooved substrateKomori, K. / Wang, X.-L. / Ogura, M. / Matuhata, H. et al. | 1996
- 939
-
Of serpents, SADs and cells - recent progress on quantum structuresMerz, J. L. et al. | 1996
- 943
-
Polarization dependence of optical gain in unstrained and strained InAlGaAs quantum wire arraysYi, J. C. / Dagli, N. et al. | 1996
- 949
-
Photoluminescence from a single quantum dotArakawa, Y. / Nagamune, Y. et al. | 1996
- 955
-
Nanometer-scale GaAs dot structures fabricated using in-situ gas etching technique with InAs dots as maskYusa, G. / Noge, H. / Kadoya, Y. / Someya, T. et al. | 1996
- 961
-
The electronic structure of coupled quantum dots in magnetic fieldsOh, J. H. / Chang, K. J. / Ihm, G. / Lee, S. J. et al. | 1996
- 967
-
Prospects of surface emitting lasersIga, K. et al. | 1996
- 973
-
Visible (630-650 nm) vertical cavity surface emitting lasers with Al-oxide/AlGaInP/AlGaAs distributed Bragg reflectorsLott, J. A. / Buydens, L. V. / Malloy, K. J. / Kobayashi, K. et al. | 1996
- 977
-
A single transverse mode operation of gain-guided top surface emitting laser diodes with a very low series resistanceKim, T. / Kim, T. K. / Lee, E. K. / Kim, T. I. et al. | 1996
- 981
-
InGaAs vertical-cavity surface-emitting lasers buried in an amorphous GaAs passivation layerYoo, B.-S. / Chu, H. Y. / Park, M. S. / Park, H.-H. et al. | 1996
- 985
-
High-reflectivity AlAsSb/In(Ga~1~-~xAl~x)As distributed Bragg reflectors on InP substrates for 1.3-1.5 m wavelengthsAsai, H. / Iwamura, H. et al. | 1996
- 991
-
Anomalous above-threshold spontaneous emission in gain-guided vertical cavity surface emitting lasersShin, J. H. / Hwang, J. K. / Ha, K. H. / Lee, Y. H. et al. | 1996
- 995
-
High power tapered InGaAs/GaAs laser diodes with carbon doped cladding layers grown by solid source molecular beam epitaxyMikulla, M. / Benz, W. / Chazan, P. / Daleiden, J. et al. | 1996
- 999
-
MOCVD-grown Al~0~.~0~7Ga~0~.~9~3As high-power laser diode arraySon, N. J. / Park, S. / Ahn, J. C. / Kwon, O. D. et al. | 1996
- 1003
-
Picosecond dynamics of InGaAs microcavity lasers - influence of carrier transport/capture and gain flatteningSogawa, F. / Hangleiter, A. / Watabe, H. / Nagamune, Y. et al. | 1996
- 1007
-
Ultralow laser threshold operation of InGaAs-GaAs-InGaP strained quantum well DFB and DBR lasersSin, Y. K. et al. | 1996
- 1013
-
Fabrication of serpentine shaped laser diode using reactive ion beam etchingChoi, J.-H. / Hong, S.-C. / Kwon, Y.-S. et al. | 1996
- 1019
-
Very low threshold current density 1.3 m InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasersKasukawa, A. / Yokouchi, N. / Yamanaka, N. / Iwai, N. et al. | 1996
- 1025
-
High performance strain-compensated 1.3 m MQW-PBH-LD using two-step etchingCho, H. S. / Jang, D. H. / Lee, J. K. / Kim, J. S. et al. | 1996
- 1029
-
Very low threshold current 630 nm band AlGaInP single quantum well laser with strain compensated layersChoi, W.-J. / Kim, J.-S. / Cho, M.-W. / Cho, I.-S. et al. | 1996
- 1033
-
High temperature operation of 650 nm AlGaInP laser diodeLim, G. / Shin, D. / Kang, S. / Oh, M. et al. | 1996
- 1037
-
Optimized characteristics of 1.55 m MQW DFB lasersHan, S.-K. / Kang, J.-K. / Choi, B.-H. / Jeong, S.-J. et al. | 1996
- 1041
-
High-temperature reliability of aluminium-free 980 nm and 808 nm laser diodesDiaz, J. / Yi, Y. / Jelen, C. / Kim, S. et al. | 1996
- 1047
-
Quantum cascade lasersCapasso, F. / Faist, J. / Sirtori, C. / Hutchinson, A. L. et al. | 1996
- 1053
-
Long-wavelength lasers and transmitters: physics and technology roadblocksBhattacharya, P. / Yoon, H. / Gutierrez-Aitken, A. / Kamath, K. et al. | 1996
- 1059
-
Optical interconnection technology for large computing and switching systemsDutta, N. K. et al. | 1996
- 1063
-
Free-space integrated optics on a chipWu, M. C. / Lin, L.-Y. / Lee, S.-S. et al. | 1996
- 1069
-
Performance enhancement of non-biased symmetric self electro-optic effect device with extremely shallow multiple quantum wells using an impedance-mismatched asymmetric Fabry-Perot structureKim, K. / Kwon, O. K. / Choi, Y. W. / Lee, E.-H. et al. | 1996
- 1073
-
Nonlinearly chirped grating for extended tuning range semiconductor lasersKim, D.-B. / Yoon, T.-H. / Kim, J. C. / Kim, S. H. et al. | 1996
- 1079
-
All-optical switching by field-enhancement in MQW structuresKnorr, C. / Wilhelm, U. / Haerle, V. / Scholz, F. et al. | 1996
- 1085
-
New infrared materials and detectorsRazeghi, M. / Kim, J. D. / Park, S. J. / Choi, Y. H. et al. | 1996
- 1091
-
Monolithic millimeter wave optical receivers using MSM photodetectors and SMODFET'sBurm, J. / Litvin, K. I. / Martin, G. H. / Schaff, W. J. et al. | 1996
- 1097
-
A monolithic ultrahigh-speed InAlAs/InGaAs PIN-HBT photoreceiver with a bandwidth of 18.6 GHzYang, K. / Gutierrez-Aitken, A. L. / Zhang, X. / Bhattacharya, P. et al. | 1996
- 1103
-
High-speed GaAs photodetectors and photodetector arrays for optical processingAnderson, G. W. / Kub, F. J. et al. | 1996
- 1109
-
Background limited performance in aluminum-free p-doped quantum well intersubband photodetectorsHoff, J. / Piotrowski, J. / Bigan, E. / Razeghi, M. et al. | 1996
- 1115
-
PIN-like Si(p)/ZnSe(n^-)/ZnSe(n^+) visible photodiodeChang, C.-C. / Lour, W.-S. / Chen, M.-H. et al. | 1996
- 1119
-
High-responsivity InGaAs metal-semiconductor-metal photodetectors with semi-transparent Schottky contactsYuang, R. H. / Chyi, J.-I. / Chan, Y. J. / Lin, W. et al. | 1996
- 1125
-
Analysis of avalanche gain with multiplication layer width and application to floating guard ring avalanche photodiodePark, C.-Y. / Hyun, K.-S. / Kim, J. S. / Kang, S.-G. et al. | 1996
- 1129
-
A monolithic GaAs photovoltaic device array with a self-aligned dielectric isolation on sidewallKim, Y.-G. / Chen, A. / Alavi, K. / Shieh, T.-J. et al. | 1996
- 1133
-
GaN based semiconductors for future optoelectronicsWalker, D. / Kung, P. / Saxler, A. / Zhang, X. et al. | 1996
- 1139
-
The 6 x 6 Luttinger-Kohn model of a cubic GaN quantum wellAhn, D. et al. | 1996
- 1145
-
Heterojunction GaN light emitting diodes grown by plasma-assisted ionized source beam epitaxyYoo, M. C. / Shim, K. H. / Myoung, J. M. / Ping, A. T. et al. | 1996
- 1151
-
Recent progress in optical studies of wurtzite GaN grown by metalorganic chemical vapor depositionShan, W. / Schmidt, T. / Yang, X. H. / Song, J. J. et al. | 1996
- 1157
-
ZnMgSSe-based semiconductor lasersOzawa, M. / Itoh, S. / Ishibashi, A. / Ikeda, M. et al. | 1996
- 1163
-
Growth and characterization of II-VI structures for micro-cavities, distributed Bragg reflectors, and blue-green lasersPessa, M. / Rakennus, K. / Uusimaa, P. / Salokatve, A. et al. | 1996
- 1169
-
II-VI blue/green laser diodes on ZnSe substratesPark, Y. S. / Yu, Z. / Boney, C. / Rowland, W. H. et al. | 1996
- 1175
-
Device modeling from first principles at the atomic levelChang, Y.-C. et al. | 1996
- 1181
-
Wannier-Stark states in semiconductor superlatticesHamaguchi, C. / Yamaguchi, M. / Nagasawa, H. / Murayama, K. et al. | 1996
- 1187
-
Intersubband transitions to the above-barrier states controlled by electron Bragg mirrorsSung, B. / Chui, H. C. / Martinet, E. L. / Harris, J. S. et al. | 1996
- 1193
-
Windows of full photon-assisted electron transmission via Stark ladder of semiconductor superlatticeTkachenko, O. A. / Tkachenko, V. A. / Baksheyev, D. G. et al. | 1996
- 1199
-
Electric field induced type-I to type-II switching in GaAs/AlAs quantum wellsErdogan, M. U. / Sankaran, V. / Kim, K. W. / Stroscio, M. A. et al. | 1996
- 1203
-
Effective-mass approximation at heterointerfaces: intervalley mixing and interface fluctuationsAndo, T. et al. | 1996
- 1209
-
Energetics of N-related defects in Zn-based II-VI semiconductorsCheong, B.-H. / Chang, K. J. et al. | 1996
- 1213
-
Miniband formation in graded-gap superlatticesGrahn, H. T. / Schrottke, L. / Ploog, K. H. / Agullo-Rueda, F. et al. | 1996
- 1219
-
Simple mesoscopic dimensional approach to exciton properties in a quantum well under an applied electric fieldKim, B. W. / Charlson, E. M. et al. | 1996
- 1225
-
A simple approach for the valence-band structure of strained-layer quantum wells within the 6 x 6 Luttinger-Kohn modelYoon, S. J. / Ahn, D. et al. | 1996
- 1229
-
High-field electron transport of the ZnS phosphor in AC thin-film electroluminescent devicesLee, I. / Pennathur, S. / Streicher, K. / Plant, T. K. et al. | 1996
- 1235
-
-X electron tunneling in AlAs/GaAs/AlAs double-barrier quantum-well heterostructureKim, G. et al. | 1996
- 1241
-
Modeling of strained quantum-well lasers and comparison with experimentsChuang, S. L. / Chang, C. S. / Minch, J. / Fang, W. et al. | 1996
-
The band lineup of AlGaInP/AlInP indirect semiconductorsIshitani, Y. / Nomoto, E. / Tanaka, T. / Minagawa, S. et al. | 1996
-
Photoluminescence spectra of heavily Si-doped GaAs at low temperatureLee, N.-Y. / Kim, J.-E. / Park, H. Y. / Kwak, D.-H. et al. | 1996