N-K-Edge EXAFS Study of Epitaxial GaN Films (Englisch)
- Neue Suche nach: Katsikini, M.
- Neue Suche nach: Paloura, E. C.
- Neue Suche nach: Fieber-Erdmann, M.
- Neue Suche nach: Moustakas, T. D.
- Neue Suche nach: Materials Research Society
- Neue Suche nach: Katsikini, M.
- Neue Suche nach: Paloura, E. C.
- Neue Suche nach: Fieber-Erdmann, M.
- Neue Suche nach: Moustakas, T. D.
- Neue Suche nach: Ponce, F. A.
- Neue Suche nach: Materials Research Society
In:
III-V nitrides
;
459-464
;
1997
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:N-K-Edge EXAFS Study of Epitaxial GaN Films
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Beteiligte:Katsikini, M. ( Autor:in ) / Paloura, E. C. ( Autor:in ) / Fieber-Erdmann, M. ( Autor:in ) / Moustakas, T. D. ( Autor:in ) / Ponce, F. A. / Materials Research Society
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Kongress:Symposium, III-V nitrides ; 1996 ; Boston; MA
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Erschienen in:III-V nitrides ; 459-464MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 449 ; 459-464
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Verlag:
- Neue Suche nach: MRS
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Erscheinungsdatum:01.01.1997
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Format / Umfang:6 pages
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Metalorganic Vapor-Phase-Epitaxial Growth of GaInN/GaN Heterostructures and Quantum WellsScholz, F. / Haerle, V. / Steuber, F. / Sohmer, A. / Materials Research Society et al. | 1997
- 15
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Growth of GaN by Sublimation Technique and Homoepitaxial Growth by MOCVDSakai, S. / Kurai, S. / Nishino, K. / Wada, K. / Materials Research Society et al. | 1997
- 23
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MOVPE Growth and Optical Characterization of GaPN Metastable Alloy SemiconductorOnabe, K. / Materials Research Society et al. | 1997
- 35
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GaN Crystals Grown in the Increased Volume High-Pressure ReactorsPorowski, S. / Bockowski, M. / Lucznik, B. / Wroblewski, M. / Materials Research Society et al. | 1997
- 41
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Growth of Bulk AIN and GaN Single Crystals by SublimationBalkas, C. M. / Sitar, Z. / Zheleva, T. / Bergman, L. / Materials Research Society et al. | 1997
- 47
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Synthesis of Bulk, Polycrystalline Gallium Nitride at Low PressuresArgoitia, A. / Angus, J. C. / Hayman, C. C. / Wang, L. / Materials Research Society et al. | 1997
- 53
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Nitrogen Plasma Pretreatment of Sapphire Substrates for the GaN Buffer Growth by Remote Plasma Enhanced MOCVDMin Hong Kim / Sone, C. / Jae Hyung Yi / Soun Ok Heur / Materials Research Society et al. | 1997
- 59
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Effect of Sapphire Nitridation on GaN by MOCVDByun, D. / Jeong, J. / Lee, J.-I. / Kim, B. / Materials Research Society et al. | 1997
- 67
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Effect of the Nitridation of the Sapphire (0001) Substrate on the GaN GrowthGrandjean, N. / Massies, J. / Vennegues, P. / Laugt, M. / Materials Research Society et al. | 1997
- 73
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Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPEHorino, K. / Kuramata, A. / Tanahashi, T. / Materials Research Society et al. | 1997
- 79
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Al~xGa~1~-~xN-Based Materials and HeterostructuresKung, P. / Saxler, A. / Walker, D. / Zhang, X. / Materials Research Society et al. | 1997
- 85
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A Model for Indium Incorporation in the Growth of InGaN FilmsPiner, E. L. / McIntosh, F. G. / Roberts, J. C. / Boutros, K. S. / Materials Research Society et al. | 1997
- 89
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The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPEKawaguchi, Y. / Shimizu, M. / Hiramatsu, K. / Sawaki, N. / Materials Research Society et al. | 1997
- 95
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Low-Temperature Metalorganic Chemical Vapor Deposition of Gallium Nitride on (0001) Sapphire Substrates Using a Remote rf Nitrogen PlasmaSone, C. / Min Hong Kim / Jae Hyung Yi / Soun Ok Heur / Materials Research Society et al. | 1997
- 101
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MOVPE GaN Gas-Phase Chemistry for Reactor Design and OptimizationSafvi, S. A. / Redwing, J. M. / Thon, A. / Flynn, J. S. / Materials Research Society et al. | 1997
- 107
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Selective Growth of GaN and Al~0~.~2Ga~0~.~8N on GaN/AIN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase EpitaxyNam, O. H. / Bremser, M. D. / Ward, B. L. / Nemanich, R. J. / Materials Research Society et al. | 1997
- 113
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A Microstructural Analysis of Orientation Variation in Epitaxial AIN on Si, Its Probable Origin, and Effect on Subsequent GaN GrowthBeye, R. / George, T. / Yang, J. W. / Khan, M. A. / Materials Research Society et al. | 1997
- 119
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Observation of Near Band Edge Transition in Aluminum Nitride Thin Film Grown by MOCVDTang, X. / Hossain, F. R. B. / Wongchotigul, K. / Spencer, M. G. / Materials Research Society et al. | 1997
- 123
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MOCVD Growth of GaN Films on Lattice-Matched Oxide SubstratesKryliouk, O. M. / Dann, T. W. / Anderson, T. J. / Maruska, H. P. / Materials Research Society et al. | 1997
- 129
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III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow ChannelUchida, K. / Tokunaga, H. / Inaishi, Y. / Akutsu, N. / Materials Research Society et al. | 1997
- 135
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GaN Quantum Dots in Al~xGa~l~-~xN Confined Layer StructuresTanaka, S. / Hirayama, H. / Iwai, S. / Aoyagi, Y. / Materials Research Society et al. | 1997
- 141
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Growth of AIBN Solid Solution by OMVPEShin, M. / Polyakov, A. Y. / Qian, W. / Skowronski, M. / Materials Research Society et al. | 1997
- 149
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MBE Growth of (In)GaN for LED ApplicationsRiechert, H. / Averbeck, R. / Graber, A. / Schienle, M. / Materials Research Society et al. | 1997
- 161
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On Surface Cracking of Ammonia for MBE Growth of GaNKamp, M. / Mayer, M. / Pelzmann, A. / Ebeling, K. J. / Materials Research Society et al. | 1997
- 173
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Growth of Cubic GaN by MBE and Its PropertiesYoshida, S. / Okumura, H. / Feuillet, G. / Hacke, P. / Materials Research Society et al. | 1997
- 185
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MBE Growth and Optical Characterization of InGaN/AlGaN Multiquantum WellsSingh, R. / Herzog, W. D. / Doppalapudi, D. / Uenlue, M. S. / Materials Research Society et al. | 1997
- 191
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In Situ Reflection High-Energy Electron Diffraction Study of Structure and Morphology Evolution of AIN Thin Films During GrowthJin, F. / Auner, G. W. / Naik, R. / Zatyko, P. / Materials Research Society et al. | 1997
- 197
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The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich ConditionsBuczkowski, S. L. / Yu, Z. / Richards-Babb, M. / Giles, N. C. / Materials Research Society et al. | 1997
- 203
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A Study of Mixed Group-V Nitrides Grown by Gas-Source Molecular Beam Epitaxy Using a Nitrogen Radical Beam SourceBi, W. G. / Tu, C. W. / Mathes, D. / Hull, R. / Materials Research Society et al. | 1997
- 209
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Kinetics of Nitrogen in GaAsN Layers During GaAs OvergrowthBandic, Z. Z. / Hauenstein, R. J. / O'Steen, M. L. / McGill, T. C. / Materials Research Society et al. | 1997
- 215
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Reactive MBE Growth of GaN and GaN:H on GaN/SiC SubstratesJohnson, M. A. L. / Yu, Z. / Boney, C. / Hughes, W. C. / Materials Research Society et al. | 1997
- 221
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Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion SourceLeung, M. S. H. / Klockenbrink, R. / Kisielowski, C. / Fujii, H. / Materials Research Society et al. | 1997
- 227
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Impact of Growth Temperature, Pressure, and Strain on the Morphology of GaN FilmsFujii, H. / Kisielowski, C. / Krueger, J. / Leung, M. S. H. / Materials Research Society et al. | 1997
- 233
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Doping Studies of n- and p-Type Al~xGa1~-~xN Grown by ECR-Assisted MBEKorakakis, D. / Ng, H. M. / Ludwig, K. / Moustakas, T. D. / Materials Research Society et al. | 1997
- 239
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Microstructures of AIN Buffer Layers for the Growth of GaN on (0001) Al~2O~3Yeadon, M. / Kim, W. / Botchkarev, A. E. / Mohammad, S. N. / Materials Research Society et al. | 1997
- 245
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Growth and Characterization of AIN on 6H-SiC SubstratesLekova, M. / Auner, G. W. / Jin, F. / Naik, R. / Materials Research Society et al. | 1997
- 251
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Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBERuvimov, S. / Liliental-Weber, Z. / Washburn, J. / Drummond, T. J. / Materials Research Society et al. | 1997
- 257
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Surface Reconstructions and III-V Stoichiometry: The Case of Cubic and Hexagonal GaNFeuillet, G. / Hacke, P. / Okumura, H. / Hamaguchi, H. / Materials Research Society et al. | 1997
- 265
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Large-Area Growth of InGaN/AlGaN Using In Situ MonitoringWoelk, E. / Schmitz, D. / Strauch, G. / Wachtendorf, B. / Materials Research Society et al. | 1997
- 271
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MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple rf Plasma SourcesJohnson, M. A. L. / Yu, Z. / Boney, C. / Rowland, W. H. / Materials Research Society et al. | 1997
- 277
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Large-Area Supersonic Jet Epitaxy of AIN, GaN, and SiC on SiliconLauhon, L. J. / Ustin, S. A. / Ho, W. / Materials Research Society et al. | 1997
- 283
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A Study of the Surface Morphological Features of the Polar Faces of ZnO by Atomic Force Microscopy (AFM) Methods and AIN Thin Films Deposited on ZnO Polar Faces by PLDSuscavage, M. J. / Ryder, D. F. / Yip, P. W. / Materials Research Society et al. | 1997
- 289
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Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase EpitaxySafvi, S. A. / Perkins, N. R. / Horton, M. N. / Kuech, T. F. / Materials Research Society et al. | 1997
- 295
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Morphology and Dielectric Properties of Reactively-Sputtered Aluminum Nitride Thin FilmsRandolph, A. G. / Kurinec, S. K. / Materials Research Society et al. | 1997
- 301
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Low-Temperature Deposition and Characterization of Al~xln~1~-~xN Thin FilmsQiu, G. / Olowolafe, J. O. / Peng, T. / Unruh, K. M. / Materials Research Society et al. | 1997
- 307
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Low Pressure CVD of GaN from OaCl~3 and NH~3Topf, M. / Koynov, S. / Fischer, S. / Dirnstorfer, I. / Materials Research Society et al. | 1997
- 313
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New Pathways to Heteroepitaxial GaN by Inorganic CVD Synthesis and Characterization of Related Ga-C-N Novel SystemsKouvetakis, J. / O'Keeffe, M. / Brouseau, L. / McMurran, J. / Materials Research Society et al. | 1997
- 319
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TOF-LEIS Characterization and Growth of GaN Thin Films Grown with ECR and NH~3Kim, E. / Bensaoula, A. / Rusakova, I. / Shultz, A. / Materials Research Society et al. | 1997
- 325
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The Growth of GaN Films by Migration-Enhanced EpitaxyHooper, S. E. / Poxon, C. T. / Cheng, T. S. / Jeffs, N. J. / Materials Research Society et al. | 1997
- 331
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Thin Film Growth of Group III Nitrides by Mass-Separated Ion Beam DepositionRonning, C. / Dreher, E. / Feldermann, H. / Sebastian, M. / Materials Research Society et al. | 1997
- 337
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Growth of (0001) ZnO Thin Films on SapphireDrehman, A. J. / Yip, P. W. / Materials Research Society et al. | 1997
- 343
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Gallium Nitride Thick Layers: Epitaxial Growth and Separation from SubstratesBel'kov, V. V. / Botnaryuk, V. M. / Pedorov, L. M. / Diakonu, I. I. / Materials Research Society et al. | 1997
- 347
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Surface Energy Constraints for Heteroepitaxial Growth on Compliant Substrates: Morphology of GaN Grown on Sc LayersKoleske, D. D. / Wickenden, A. E. / Freitas, J. A. / Kaplan, R. / Materials Research Society et al. | 1997
- 355
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Selected Energy Epitaxy of Gallium NitrideChilukuri, R. K. / Zhang, S. / Chen, E. / Davis, R. P. / Materials Research Society et al. | 1997
- 361
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Material and Device Characteristics of MBE-Grown GaN Using a New rf Plasma SourceBeresford, R. / Stevens, K. S. / Cui, Q. / Schwartzman, A. / Materials Research Society et al. | 1997
- 367
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Growth of Hexagonal Gallium Nitride Films on the (111) Surfaces of Silicon with Zinc Oxide Buffer LayersKim, Y. / Kim, C. G. / Lee, K.-W. / Yu, K.-S. / Materials Research Society et al. | 1997
- 373
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ZnO Buffer Formed on Si and Sapphire Substrates for GaN MOVPEShirasawa, T. / Honda, T. / Koyama, F. / Iga, K. / Materials Research Society et al. | 1997
- 379
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Deposition of AIN on WS~2 (0001) Substrate by Atomic Layer Growth ProcessChung, J.-W. / Ohuchi, F. S. / Materials Research Society et al. | 1997
- 385
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MBE Growth and Characterization of ZnS/GaN HererostructuresPiquette, E. C. / Bandic, Z. Z. / McCaldin, J. O. / McGill, T. C. / Materials Research Society et al. | 1997
- 393
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Structural and Optical Properties of Homoepitaxial GaN LayersBaranowski, J. M. / Liliental-Weber, Z. / Korona, K. / Pakula, K. / Materials Research Society et al. | 1997
- 405
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Nanopipes and Inversion Domains in High-Quality GaN Epitaxial LayersPonce, F. A. / Young, W. T. / Cherns, D. / Steeds, J. W. / Materials Research Society et al. | 1997
- 411
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Determination of the Percentage of the Cubic and Hexagonal Phases in GaN with NEXAFSKatsikini, M. / Paloura, E. C. / Moustakas, T. D. / Holub-Krappe, E. / Materials Research Society et al. | 1997
- 417
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Nanotubes in GaNLiliental-Weber, Z. / Chen, Y. / Ruvimov, S. / Swider, W. / Materials Research Society et al. | 1997
- 423
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Inversion Domain Boundaries in GaN Grown on SapphireRomano, L. T. / Northrup, J. E. / Materials Research Society et al. | 1997
- 429
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Mechanisms of Strain Reduction in GaN and AlGaN/GaN Epitaxial LayersGfroerer, O. / Schluesener, T. / Haerle, V. / Scholz, F. / Materials Research Society et al. | 1997
- 435
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Structural and Optical Characterization of High-Quality Cubic GaN Epilayers Grown on GaAs and 3C-SiC Substrates by Gas-Source MBE Using RHEED In Situ MonitoringOkumura, H. / Balakrishnan, K. / Feuillet, G. / Ohta, K. / Materials Research Society et al. | 1997
- 441
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Structural Analysis of GaN and GaN/InGaN/GaN DH Structures on Sapphire (0001) Substrate Grown by MOCVDSato, H. / Naoi, Y. / Sakai, S. / Materials Research Society et al. | 1997
- 447
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STM Observation of Nitrided-Ga on SiNakada, Y. / Miwa, S. / Okumura, H. / Materials Research Society et al. | 1997
- 453
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Comparison of the Microstructure of AIN Films Grown by MOCVD and by PLD on Sapphire SubstratesLi, Y.-X. / Salamanca-Riba, L. / Talyansky, V. / Venkatesan, T. / Materials Research Society et al. | 1997
- 459
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N-K-Edge EXAFS Study of Epitaxial GaN FilmsKatsikini, M. / Paloura, E. C. / Fieber-Erdmann, M. / Moustakas, T. D. / Materials Research Society et al. | 1997
- 465
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Studies of Group-III-Nitride Growth on SiliconBlant, A. V. / Cheng, T. S. / Foxon, C. T. / Bussey, J. C. / Materials Research Society et al. | 1997
- 471
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Hexagonal Growth Hillocks in GaN EpilayersMiddleton, P. G. / Trager-Cowan, C. / Mohammed, A. / O'Donnell, K. P. / Materials Research Society et al. | 1997
- 477
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High-Resolution X-ray Diffraction of GaN Grown on Sapphire SubstratesSaxier, A. / Capano, M. A. / Mitchel, W. C. / Kung, P. / Materials Research Society et al. | 1997
- 483
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High-Resolution X-ray Diffraction from Epitaxial Gallium Nitride FilmsLafford, T. / Loxley, N. / Tanner, B. K. / Materials Research Society et al. | 1997
- 489
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High-Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPEGoorsky, M. S. / Polyakov, A. Y. / Skowronski, M. / Shin, M. / Materials Research Society et al. | 1997
- 497
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Free and Bound Excitons in GaN Epitaxial FilmsMeyer, B.-K. / Materials Research Society et al. | 1997
- 509
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Characterization of OMVPE-Grown AlGaInN HeterostructuresBour, D. P. / Chung, H. F. / Goetz, W. / Romano, L. / Materials Research Society et al. | 1997
- 519
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Spatial Distribution of Electron Concentration and Strain in Bulk GaN Single Crystals - Relation to Growth MechanismPerlin, P. / Suski, T. / Polian, A. / Chervin, J. C. / Materials Research Society et al. | 1997
- 525
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Thickness Dependence of Electronic Properties of GaN EpilayersGoetz, W. / Walker, J. / Romano, L. T. / Johnson, N. M. / Materials Research Society et al. | 1997
- 531
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Persistent Photoconductivity in n-Type GaNWickenden, A. E. / Beadie, G. / Koleske, D. D. / Rabinovich, W. S. / Materials Research Society et al. | 1997
- 537
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Persistent Photoconductivity in p-Type GaN Epilayers and n-Type AlGaN/GaN HeterostructuresLi, J. Z. / Lin, J. Y. / Jiang, H. X. / Khan, M. A. / Materials Research Society et al. | 1997
- 543
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Magnetic Resonance Studies of High-Resistivity GaN Films Grown on Al~2O~3Glaser, E. R. / Kennedy, T. A. / Wickenden, A. E. / Koleske, D. D. / Materials Research Society et al. | 1997
- 549
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Observation of Midgap States in GaN with Optical-Isothermal Capacitance Transient SpectroscopyHacke, P. / Miyoshi, H. / Hiramatsu, K. / Okumura, H. / Materials Research Society et al. | 1997
- 555
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Structural Characteristics of MOCVD-Grown AIN Films with Different Carbon ConcentrationLi, Y.-X. / Salamanca-Riba, L. / Spencer, M. G. / Wongchigul, K. / Materials Research Society et al. | 1997
- 561
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Deep Levels in GaN Studied by Extrinsic Photoconductivity MeasurementZhang, R. / Huang, Z. / Guo, B. / Chen, J. C. / Materials Research Society et al. | 1997
- 567
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Electron-Phonon Scattering in Si-Doped GaNWetzel, C. / Walukiewicz, W. / Ager, J. W. / Materials Research Society et al. | 1997
- 573
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Intrinsic Mobility Limits of a Two-Dimensional Electron Gas in AlGaN/GaN HeterostructuresWalukiewicz, W. / Hsu, L. / Redwing, J. M. / Materials Research Society et al. | 1997
- 579
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Spin Resonance Investigations of GaN and AlGaNReinacher, N. M. / Angerer, H. / Arnbacher, O. / Brandt, M. S. / Materials Research Society et al. | 1997
- 585
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Effects of X-ray and gamma-ray Irradiation on GaNQiu, C. H. / Leksono, M. W. / Pankove, J. I. / Rossington, C. / Materials Research Society et al. | 1997
- 591
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Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPEPolyakov, A. Y. / Govorkov, A. V. / Smirnov, N. B. / Shin, M. / Materials Research Society et al. | 1997
- 597
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Photoconducting Properties of Ultraviolet Detectors Based on GaN and Al~1~-~xGa~xN Films Grown by ECR-MBEMisra, M. / Korakakis, D. / Singh, R. / Sampath, A. / Materials Research Society et al. | 1997
- 603
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Electrical Characterization of Al-AlN(PSMBE Grown)-Si MIS StructuresKrupitskaya, R. Y. / Auner, G. W. / Daley, T. E. / Materials Research Society et al. | 1997
- 609
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Analytical Theory of Electron Mobility and Drift Velocity in GaNGelmont, B. L. / Shut, M. S. / Stroscio, M. / Materials Research Society et al. | 1997
- 615
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p-Type Conductivity with a High Hole Mobility in Cubic GaN/GaAs EpilayersAs, D. J. / Ruether, A. / Luebbers, M. / Mimkes, J. / Materials Research Society et al. | 1997
- 621
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Multiphoton Excitation Studies on GaN with PS PulsesLibon, I. H. / Voelkmann, C. / Kim, D. / Petrova-Koch, V. / Materials Research Society et al. | 1997
- 627
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Observation of a Two-Dimensional Electron Gas in the AlGaN/GaN on SiC SubstratesChi, G. C. / Lin, C. F. / Cheng, H. C. / Huang, J. A. / Materials Research Society et al. | 1997
- 633
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Study of Traps in GaN by Thermally-Stimulated CurrentZhang, R. / Huang, Z. / Chen, J. C. / Zheng, Y. / Materials Research Society et al. | 1997
- 641
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Spontaneous and Stimulated Recombination in the NitridesHangleiter, A. / Scholz, F. / Haerle, V. / Im, J.-S. / Materials Research Society et al. | 1997
- 653
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Recombination of Localized Excitons in InGaN Single- and Multiquantum-Well StructuresChichibu, S. / Azuhata, T. / Sota, T. / Nakamura, S. / Materials Research Society et al. | 1997
- 659
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Gain Spectra and Stimulated Emission in Epitaxial (In,Al) GaN Thin FilmsWiesmann, D. / Brener, I. / Pfeiffer, L. N. / Khan, M. A. / Materials Research Society et al. | 1997
- 665
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Emission Mechanism of the InGaN MQW Grown by MOCVDNarukawa, Y. / Kawakami, Y. / Fujita, S. / Materials Research Society et al. | 1997
- 671
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Defect Transitions in GaN Between 3.0 and 3.4 eVRieger, W. / Ambacher, O. / Rohrer, E. / Angerer, H. / Materials Research Society et al. | 1997
- 677
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Depth Profile of the Excitonic Luminescence in Gallium-Nitride LayersSiegle, H. / Hoffmann, A. / Eckey, L. / Thomsen, C. / Materials Research Society et al. | 1997
- 683
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Dislocation Luminescence in Wurtzite GaNShreter, Y. G. / Rebane, Y. T. / Davis, T. J. / Barnard, J. / Materials Research Society et al. | 1997
- 689
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Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman SpectroscopyPerlin, P. / Suski, T. / Polian, A. / Chervin, J. C. / Materials Research Society et al. | 1997
- 695
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Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBELeroux, M. / Beaumont, B. / Grandjean, N. / Massies, J. / Materials Research Society et al. | 1997
- 701
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Photoluminescence Excitation Studies of the Optical Transitions in GaNKovalev, D. / Averboukh, B. / Meyer, B.-K. / Volm, D. / Materials Research Society et al. | 1997
- 707
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Photoluminescence of Fe Complexes in GaNThurian, P. / Hoffmann, A. / Eckey, L. / Maxim, P. / Materials Research Society et al. | 1997
- 713
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Photoluminescence, Reflectance, and Magnetospectroscopy of Shallow Excitons in GaNSkromme, B. J. / Zhao, H. / Goldenberg, B. / Kong, H. S. / Materials Research Society et al. | 1997
- 719
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Characterization of GaN Films on Sapphire by CathodoluminescenceChao, L.-L. / Cargill, G. S. / Kothandaraman, C. / Materials Research Society et al. | 1997
- 725
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Raman Analysis of Electron-Phonon Interactions in GaN FilmsBergman, L. / Bremser, M. D. / Christman, J. A. / King, S. W. / Materials Research Society et al. | 1997
- 731
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Direct Imaging of Impurity-Induced Raman Scattering in GaNPonce, F. A. / Steeds, J. W. / Dyer, C. D. / Pitt, G. D. / Materials Research Society et al. | 1997
- 737
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Subpicosecond Time-Resolved Raman Studies of Nonequilibrium Excitations in Wurtzite GaNTsen, K. T. / Joshi, R. P. / Ferry, D. K. / Botchkarev, A. / Materials Research Society et al. | 1997
- 745
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Effects of Strain Fields on Excitons and Phonons in Wurtzite GaN EpilayersGil, B. / Briot, O. / Aulombard, R. L. / Demangeot, J. P. / Materials Research Society et al. | 1997
- 757
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Magnetic Resonance Studies of GaN-Based Single-Quantum Well LEDsCarlos, W. E. / Glaser, E. R. / Kennedy, T. A. / Nakamura, S. / Materials Research Society et al. | 1997
- 769
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Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on SapphireNiebuhr, R. / Bachem, K. H. / Behr, D. / Hoffmann, C. / Materials Research Society et al. | 1997
- 775
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Intrinsic and Thermal Stress in Gallium Nitride Epitaxial FilmsAger, J. W. / Suski, T. / Ruvimov, S. / Krueger, J. / Materials Research Society et al. | 1997
- 781
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Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band ParametersEdwards, N. V. / Yoo, S. D. / Bremser, M. D. / Horton, M. N. / Materials Research Society et al. | 1997
- 787
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Bulk and Surface Electronic Structure of GaN Measured Using Angle-Resolved Photoemission, Soft X-ray Emission and Soft X-ray AbsorptionSmith, K. E. / Dhesi, S. S. / Duda, L.-C. / Stagarescu, C. B. / Materials Research Society et al. | 1997
- 793
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Yellow Luminescence and Associated ODMR in MOVPE GaN: A Comparison of Defect ModelsMason, P. W. / Doernen, A. / Haerle, V. / Scholz, F. / Materials Research Society et al. | 1997
- 799
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Optical Quenching of Photoconductivity in GaN PhotoconductorsHuang, Z. C. / Mort, D. B. / Shu, P. K. / Zhang, R. / Materials Research Society et al. | 1997
- 805
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Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic EllipsometryYao, H. / Yan, C. H. / Jenkinson, H. A. / Zavada, J. M. / Materials Research Society et al. | 1997
- 811
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Changes in Optical Transmittance of Aluminum Nitride Thin Films Exposed to AirSakuragi, Y. / Watanabe, Y. / Nakamura, Y. / Amamoto, Y. / Materials Research Society et al. | 1997
- 817
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An Optical Waveguide Formed by Aluminum Nitride Thin Film on SapphireTang, X. / Yuan, Y. / Wongchotigul, K. / Spencer, M. G. / Materials Research Society et al. | 1997
- 823
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Optical Studies of MOCVD In~xGa~1~-~xN AlloysLittle, B. D. / Shan, M. / Song, J. J. / Feng, Z. C. / Materials Research Society et al. | 1997
- 829
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Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum WellsSmith, M. / Lin, J. Y. / Jiang, H. X. / Khan, A. / Materials Research Society et al. | 1997
- 835
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In-Plane Optical Anisotropies of Al~xGa~1~-~xN Films in Their Regions of TransparencyRossow, U. / Edwards, N. V. / Bremser, M. D. / Kern, R. S. / Materials Research Society et al. | 1997
- 841
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Strain Effects on Excitonic Transitions in GaNShah, W. / Hauenstein, R. J. / Fischer, A. J. / Song, J. J. / Materials Research Society et al. | 1997
- 847
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Bound Exciton Energies, Biaxial Strains, and Defect Microstructures in GaN/AlN/6H-SiC(0001) HeterostructuresPerry, W. G. / Zheleva, T. / Linthicum, K. J. / Bremser, M. D. / Materials Research Society et al. | 1997
- 853
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Investigation of Vacancies in GaN by Positron AnnihilationJoergensen, L. V. / Kruseman, A. C. / Schut, H. / Van Veen, A. / Materials Research Society et al. | 1997
- 861
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Theory of Point Defects and InterfacesVan De Walle, C. G. / Neugebauer, J. / Materials Research Society et al. | 1997
- 871
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Incomplete Solubility in Nitride AlloysHo, I. H. / Stringfellow, G. B. / Materials Research Society et al. | 1997
- 881
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X-ray Absorption and Reflection as Probes of the GaN Conduction Bands: Theory and Experiment of the N-K-Edge and Ga M~2~,~3 EdgesLambrecht, W. R. L. / Rashkeev, S. N. / Segall, B. / Lawniczak-Jablonska, K. / Materials Research Society et al. | 1997
- 887
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Electronic Structure of Biaxially-Strained Wurtzite Crystals GaN and AlNMajewski, J. A. / Staedele, M. / Vogl, P. / Materials Research Society et al. | 1997
- 893
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Theory of Interfaces in Wide-Gap NitridesBuongiorno Nardelli, M. / Rapcewicz, K. / Briggs, E. L. / Bungaro, C. / Materials Research Society et al. | 1997
- 899
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Energetics of AlN Epitaxial Wetting Layers on SiC (0001)Di Felice, R. / Northrup, J. E. / Neugebauer, J. / Materials Research Society et al. | 1997
- 905
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Band Structure and Cation Ordering in LiGaO~2Limpijumnong, S. / Lambrecht, W. R. L. / Segall, B. / Kim, K. / Materials Research Society et al. | 1997
- 911
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Optical Signature of the GaN (1010) SurfaceNoguez, C. / Esquivel-Sirvent, R. / Alfonso, D. R. / Ulloa, S. E. / Materials Research Society et al. | 1997
- 917
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Stability and Band Offsets of SiC/GaN, SiC/AlN, and AlN/GaN HeterostructuresMajewski, J. A. / Staedele, M. / Vogl, P. / Materials Research Society et al. | 1997
- 923
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Offsets and Polarization at Strained AlN/GaN Polar InterfacesBernardini, F. / Fiorentini, V. / Vanderbilt, D. / Materials Research Society et al. | 1997
- 929
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Theoretical Study of Group-III-Nitride AlloysKim, K. / Limpijumnong, S. / Lambrecht, W. R. L. / Segall, B. / Materials Research Society et al. | 1997
- 935
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Shallow Impurity States in Wurtzite and Zinc Blende Structure GaNWang, R. / Ruden, P. P. / Kolnik, J. / Oguzman, L. / Materials Research Society et al. | 1997
- 941
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Structure, Electronic Properties, and Defects of GaN Using a Self-Consistent Molecular-Dynamics MethodStumm, P. / Drabold, D. A. / Materials Research Society et al. | 1997
- 947
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A First Model of Amorphous GaN from Ab Initio Molecular DynamicsDrabold, D. A. / Stumm, P. / Materials Research Society et al. | 1997
- 953
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Relaxations at GaN (1010) and (110) SurfacesFilipetti, A. / Menchi, M. / Bosin, A. / Cappellini, G. / Materials Research Society et al. | 1997
- 961
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First Microscopic Observation of Cadmium-Hydrogen Pairs in GaNBurchard, A. / Deicher, M. / Forkel-Wirth, D. / Haller, E. E. / Materials Research Society et al. | 1997
- 969
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Chlorine-Based Plasma Etching of GaNShul, R. J. / Briggs, R. D. / Pearton, S. J. / Vartuli, C. B. / Materials Research Society et al. | 1997
- 981
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Ion Implantation and Annealing Studies in III-V NitridesZolper, J. C. / Pearton, S. J. / Williams, J. S. / Tan, H. H. / Materials Research Society et al. | 1997
- 993
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Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double HeterostructuresPearton, S. J. / Bendi, S. / Jones, K. S. / Krishnamoorthy, V. / Materials Research Society et al. | 1997
- 999
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The Influence of Hydrogen Addition on the Chemical Properties of Hydrogenated Aluminum Nitride Films Prepared by rf Reactive SputteringLee, J.-Y. / Yong, Y.-J. / Materials Research Society et al. | 1997
- 1005
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Monitoring of Indium X-ray Peak to Optimize In~xGa~1~-~xN Layer Grown by Metalorganic Chemical Vapor DepositionLu, H. / Thothathiri, M. / Wu, Z. / Bhat, I. / Materials Research Society et al. | 1997
- 1011
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Pulsed Excimer Laser Processing of AlN/GaN Thin FilmsWong, W. S. / Schloss, L. F. / Sudhir, G. S. / Linder, B. P. / Materials Research Society et al. | 1997
- 1017
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Chemical Etching of AlN and InAlN in KOH SolutionsVartuli, C. B. / Lee, J. W. / MacKenzie, J. D. / Pearton, S. J. / Materials Research Society et al. | 1997
- 1023
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Comparison of ICl and IBr for Dry Etching of III-NitridesVartuli, C. B. / Lee, J. W. / MacKenzie, J. D. / Pearton, S. J. / Materials Research Society et al. | 1997
- 1029
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Reactive Ion-Beam Etching of GaN Grown by MOVPESaotome, K. / Matsutani, A. / Shirasawa, T. / Mori, M. / Materials Research Society et al. | 1997
- 1035
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Photo-Assisted Anodic Etching of Gallium Nitride Grown by MOCVDLu, H. / Wu, Z. / Bhat, I. / Materials Research Society et al. | 1997
- 1041
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Patterning of LiGaO~2 and LiAlO~2 by Wet and Dry EtchingLee, J. W. / Pearton, S. J. / Abernathy, C. R. / Wilson, R. G. / Materials Research Society et al. | 1997
- 1049
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Thermal Stability of Pt, Pd, and Ni on GaNDuxstad, K. J. / Haller, E. E. / Yu, K.-M. / Hirsch, M. T. / Materials Research Society et al. | 1997
- 1055
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Ohmic Contact to n-GaN with TiN Diffusion BarrierKaminska, E. / Piotrowska, A. / Guziewicz, M. / Kasjaniuk, S. / Materials Research Society et al. | 1997
- 1061
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Cr/Ni/Au Ohmic Contacts to the Moderately-Doped p- and n-GaNKim, T. / Yoo, M. C. / Materials Research Society et al. | 1997
- 1067
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InN-Based Ohmic Contacts to AlInNDonovan, S. M. / Ren, F. / Mackenzie, J. D. / Abernathy, C. R. / Materials Research Society et al. | 1997
- 1073
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Characterization of Metal/Al~xIn~1~-~xN Interface Thermal Stability and Electrical PropertiesQiu, G. / Chen, P. / Olowolafe, J. O. / Swann, C. P. / Materials Research Society et al. | 1997
- 1079
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On the Epitaxy of Metal Films on GaNLiu, Q. Z. / Smith, K. V. / Yu, E. T. / Lau, S. S. / Materials Research Society et al. | 1997
- 1085
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Influence of Surface Defects on the Characteristics of GaN Schottky DiodesDuboz, J.-Y. / Binet, F. / Laurent, N. / Rosencher, E. / Materials Research Society et al. | 1997
- 1091
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Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaNTrexler, J. T. / Pearton, S. J. / Holloway, P. H. / Mier, M. G. / Materials Research Society et al. | 1997
- 1097
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Investigation of Aluminum and Titanium/Aluminum Contacts to n-Type Gallium NitrideLuther, B. P. / Mohney, S. E. / Jackson, T. N. / Asif Khan, M. / Materials Research Society et al. | 1997
- 1103
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PtIn~2 Ohmic Contacts to n-GaNIngerly, D. B. / Chang, Y. A. / Perkins, N. R. / Kuech, T. F. / Materials Research Society et al. | 1997
- 1109
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Wide Bandgap Semiconductors for Cold Cathodes: A Theoretical AnalysisLerner, P. / Cutler, P. H. / Miskovsky, N. M. / Materials Research Society et al. | 1997
- 1115
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Evolution of Ti Schottky Barrier Heights on n-Type GaN with AnnealingHirsch, M. T. / Duxstad, K. J. / Haller, E. E. / Materials Research Society et al. | 1997
- 1121
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Nitride-Based Thin-Film Cold Cathode EmittersChristman, J. A. / Sowers, A. T. / Bremser, M. D. / Ward, B. L. / Materials Research Society et al. | 1997
- 1127
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Electron Emission from Cold CathodesPryor, R. W. / Li, L. / Busta, H. H. / Materials Research Society et al. | 1997
- 1135
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Characteristics of InGaN Multiquantum-Well-Structure Laser DiodesNakamura, S. / Materials Research Society et al. | 1997
- 1143
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Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well StructureAmario, H. / Takeuchi, T. / Sofa, S. / Sakai, H. / Materials Research Society et al. | 1997
- 1151
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Design Consideration of GaN-Based Surface Emitting LasersHonda, T. / Koyama, F. / Iga, K. / Materials Research Society et al. | 1997
- 1161
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Stacked InGaN/AlGaN Double HeterostructuresRoberts, J. C. / McIntosh, F. G. / Aumer, M. E. / Piner, E. L. / Materials Research Society et al. | 1997
- 1167
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Tunnel Effects in Luminescence Spectra of InGaN/AlGaN/GaN Light-Emitting DiodesYunovich, A. E. / Kovalev, A. N. / Kudryashov, V. E. / Manyachin, F. I. / Materials Research Society et al. | 1997
- 1173
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Optical and Electrical Characteristics of Single-Quantum-Well InGaN light-Emitting DiodesPerlin, P. / Osinski, M. / Eliseev, P. G. / Materials Research Society et al. | 1997
- 1179
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Degradation of Single-Quantum-Well InGaN Green Light Emitting Diodes Under High Electrical StressOsinski, M. / Perlin, P. / Eliseev, P. G. / Liu, G. / Materials Research Society et al. | 1997
- 1185
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Carrier Recombination Dynamics of InGaN/GaN LEDs and Its Applications to the Optimization of uv Generation EfficiencyBasrur, J. P. / Choa, F. S. / Liu, P.-L. / Sipior, J. / Materials Research Society et al. | 1997
- 1191
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Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVDEgawa, T. / Ishikawa, H. / Jimbo, T. / Umeno, M. / Materials Research Society et al. | 1997
- 1197
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Realization and Characterization of Optically-Pumped GaInN-DFB LasersHofmann, R. / Wagner, V. / Gauggel, H.-P. / Adler, F. / Materials Research Society et al. | 1997
- 1203
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Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement HeterostructuresLoeber, D. A. S. / Anderson, N. G. / Redwing, J. M. / Flynn, J. S. / Materials Research Society et al. | 1997
- 1209
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Stimulated Emission and Gain Measurements from InGaN/GaN HeterostructuresShmagin, I. K. / Muth, J. F. / Krishnankutty, S. / Kolbas, R. M. / Materials Research Society et al. | 1997
- 1215
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High-Quality Photoconductive Ultraviolet GaN/6H-SiC Detector and Its PropertiesYang, K. / Zhang, R. / Zang, L. / Shen, B. / Materials Research Society et al. | 1997
- 1221
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GaN-Based MSM uv PhotodetectorsLiang, S. / Cai, W. / Li, Y. / Liu, Y. / Materials Research Society et al. | 1997
- 1227
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Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBEVan Hove, J. M. / Chow, P. P. / Hickman, R. / Wowchak, A. M. / Materials Research Society et al. | 1997
- 1233
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Study of IBAD-Deposited AlN Films for Vacuum Diode Electron EmissionForsythe, E. W. / Sprague, J. A. / Khan, B. A. / Metha, S. / Materials Research Society et al. | 1997