Monolithic InGaAs-on-silicon shortwave infrared detector arrays [2999-32] (Englisch)
- Neue Suche nach: Joshi, A. M.
- Neue Suche nach: Brown, R.
- Neue Suche nach: Fitzgerald, E. A.
- Neue Suche nach: Wang, X.
- Neue Suche nach: SPIE
- Neue Suche nach: Joshi, A. M.
- Neue Suche nach: Brown, R.
- Neue Suche nach: Fitzgerald, E. A.
- Neue Suche nach: Wang, X.
- Neue Suche nach: Brown, G. J.
- Neue Suche nach: Razeghi, M.
- Neue Suche nach: SPIE
In:
Photodetectors: materials and devices II
2999
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211-224
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1997
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Monolithic InGaAs-on-silicon shortwave infrared detector arrays [2999-32]
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Beteiligte:Joshi, A. M. ( Autor:in ) / Brown, R. ( Autor:in ) / Fitzgerald, E. A. ( Autor:in ) / Wang, X. ( Autor:in ) / Brown, G. J. / Razeghi, M. / SPIE
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Kongress:Conference, Photodetectors: materials and devices II ; 1997 ; San Jose; CA
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Erschienen in:Photodetectors: materials and devices II , 2999 ; 211-224PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING , 2999 ; 211-224
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsdatum:01.01.1997
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Format / Umfang:14 pages
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2
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State of infrared photodetectors and materials (Invited Paper) [2999-01]Casselman, T. N. / SPIE et al. | 1997
- 2
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State of infrared photodetectors and materialsCasselman, Thomas N. et al. | 1997
- 11
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Radiative lifetime in semiconductors: influence of photon recyclingGrein, Christoph H. / Ehrenreich, Henry / Runge, E. et al. | 1997
- 11
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Radiative lifetime in semiconductors: influence of photon recycling [2999-02]Grein, C. H. / Ehrenreich, H. / Runge, E. / SPIE et al. | 1997
- 19
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Pixelless infrared imaging device concept (Invited Paper) [2999-25]Liu, H. C. / SPIE et al. | 1997
- 19
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Pixelless infrared-imaging device conceptLiu, Hui C. et al. | 1997
- 25
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GaInAsSb and InAsSbP photodetectors for midinfrared wavelengths [2999-04]Shellenbarger, Z. A. / Mauk, M. G. / Gottfried, M. / Lesko, J. D. / SPIE et al. | 1997
- 25
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GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengthsShellenbarger, Zane A. / Mauk, Michael G. / Gottfried, Mark / Lesko, Joseph D. / DiNetta, Louis C. et al. | 1997
- 34
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Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectorsAdamiec, Krzysztof / Grudzien, Miroslaw / Nowak, Zenon / Pawluczyk, Jaroslaw / Piotrowski, Jozef / Antoszewski, Jarek / Dell, John M. / Musca, Charles A. / Faraone, Lorenzo et al. | 1997
- 34
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Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors [2999-05]Adamiec, K. / Grudzien, M. / Nowak, Z. / Pawluczyk, J. / SPIE et al. | 1997
- 46
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Design issues relating to low-temperature dark current in quantum well infrared photodetectorsSingh, Anjali / Cardimona, David A. et al. | 1997
- 46
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Design issues relating to low-temperature dark current in quantum well infrared photodetectors [2999-52]Singh, A. / Cardimona, D. A. / SPIE et al. | 1997
- 55
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Sb-based infrared materials and photodetectors for the near-room-temperature applicationsKim, Jedon D. / Michel, Erick J. / Mohseini, H. / Wojkowski, Joseph S. / Lee, J. J. / Razeghi, Manijeh et al. | 1997
- 55
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Sb-based infrared materials and photodetectors for the near-room-temperature applications [2999-07]Kim, J. D. / Michel, E. J. / Mohseini, H. / Wojkowski, J. / SPIE et al. | 1997
- 68
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Improvement of avalanche photodetectors through integration of InGaAs and Si (Invited Paper) [2999-09]Hawkins, A. R. / Wu, W. / Bowers, J. E. / SPIE et al. | 1997
- 68
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Improvement of avalanche photodetectors through integration of InGaAs and SiHawkins, Aaron R. / Wu, Weishu / Bowers, John E. et al. | 1997
- 78
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Techniques for the design and simulation of interdigitated MSM photodetectors [2999-10]Cahill, L. W. / SPIE et al. | 1997
- 78
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Techniques for the design and simulation of interdigitated MSM photodetectorsCahill, Laurence W. et al. | 1997
- 86
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Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes [2999-11]Rommel, S. L. / Erby, D. N. / Gao, W. / Berger, P. R. / SPIE et al. | 1997
- 86
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Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodesRommel, Sean L. / Erby, David N. / Gao, Wei / Berger, Paul R. / Zydzik, George J. / Rhodes, W. W. / O'Bryan, H. M. / Sivco, Deborah L. / Cho, Alfred Y. et al. | 1997
- 94
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Improved performance III-V quantum well IR photodetectors: review of current and potential focal plane technologyClaiborne, Lewis T. et al. | 1997
- 94
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Improved performance III-V quantum well IR photodetectors: review of current and potential focal plane technology (Invited Paper) [2999-19]Claiborne, L. T. / SPIE et al. | 1997
- 103
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Optical coupling mechanisms in quantum well infrared photodetectors [2999-20]Bandara, S. V. / Gunapala, S. D. / Liu, J. K. / Hong, W. / SPIE et al. | 1997
- 103
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Optical coupling mechanisms in quantum well infrared photodetectorsBandara, Sumith V. / Gunapala, Sarath D. / Liu, John K. / Hong, Winn / Park, Jin S. et al. | 1997
- 109
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Simplified quantum well infrared photodetectorsTidrow, Meimei Z. et al. | 1997
- 109
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Simplified quantum well infrared photodetectors (invited Paper) [2999-21]Tidrow, M. Z. / SPIE et al. | 1997
- 118
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Dry etching processes for fabrication of QWIPs and other detector structuresPearton, Stephen J. et al. | 1997
- 118
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Dry-etching processes for fabrication of QWIPs and other detector structures (Invited Paper) [2999-22]Pearton, S. J. / SPIE et al. | 1997
- 132
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Effect of compressive strain on the performance of p-type quantum well infrared photodetectorsLi, Sheng S. / Chu, Jerome T. et al. | 1997
- 132
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Effect of compressive strain on the performance of p-type quantum well infrared photodetectors (Invited Paper) [2999-23]Li, S. S. / Chu, J. T. / SPIE et al. | 1997
- 144
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Very long wavelength GaAs/GaInP quantum well infrared photodetectors [2999-24]Jelen, C. / Slivken, S. / Brown, G. J. / Razeghi, M. / SPIE et al. | 1997
- 144
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Very long wavelength GaAs/GaInP quantum well infrared photodetectorsJelen, Christopher L. / Slivken, Steven / Brown, Gail J. / Razeghi, Manijeh et al. | 1997
- 153
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Nonlinear photoresponse of quantum well infrared photodetectors at high-excitation powerErshov, Maxim / Liu, Hui C. / Buchanan, Margaret / Wasilewski, Zbigniew R. et al. | 1997
- 153
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Nonlinear photoresponse of quantum well infrared photodetectors at high-excitation power [2999-51]Ershov, M. / Liu, H. C. / Buchanan, M. / Wasilewski, Z. R. / SPIE et al. | 1997
- 161
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Can coupling with remote conduction bands cause a sufficient normal-incidence absorption in n-type direct-gap semiconductor quantum wells?Yang, Rui Q. et al. | 1997
- 161
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Can coupling with remote conduction bands cause a significant normal-incidence absorption in n-type direct-gap semiconductor quantum wells? [2999-26]Yang, R. Q. / SPIE et al. | 1997
- 170
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High-efficiency high-speed (60-GHz) InGaAsP multimode waveguide photodetectorsRenaud, Jean C. / Deborgies, Francois A. / Combemale, Y. / Blondeau, Robert R. / Duchemin, Jean-Pascal / Vilcot, Jean-Pierre / Harari, Joseph / Decoster, Didier J. et al. | 1997
- 170
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High-efficiency high-speed (60-GHz) InGaAsP multimode waveguide photodetectors (Invited Paper) [2999-27]Renaud, J. C. / Deborgies, F. A. / Combemale, Y. / Blondeau, R. R. / SPIE et al. | 1997
- 176
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InP photodetectors for millimeter-wave applications based on edge-coupled heterojunction phototransistors [2999-28]Van de Casteele, J. / Magnin, V. / Gouy, J.-P. / Vilcot, J.-P. / SPIE et al. | 1997
- 176
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InP photodetectors for millimeter wave applications based on edge-coupled heterojunction phototransistorsVan de Casteele, Jerome / Magnin, Vincent / Gouy, Jean-Philippe / Vilcot, Jean-Pierre / Harari, Joseph / Maricot, Sophie / Decoster, Didier J. et al. | 1997
- 183
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Wide-spectral-response photodetectors based on microcrystalline hydrogenated silicon thin films [2999-29]Vieira, M. / Fantoni, A. / Koynov, S. / Schwarz, R. / SPIE et al. | 1997
- 183
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Wide-spectral response photodetectors based on microcrystalline hydrogenated silicon thin filmsVieira, Manuela / Fantoni, Alessandro / Koynov, Svetoslav / Schwarz, Reinhard et al. | 1997
- 193
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Noise analysis of the detection unit pixel a-Si:HBalco, Peter / Peransin, Jean-Marie / Orsal, Bernard P. et al. | 1997
- 193
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Noise analysis of the detection unit pixel a-Si:H [2999-30]Balco, P. / Peransin, J.-M. / Orsal, B. P. / SPIE et al. | 1997
- 204
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High-quantum-efficiency 2.2-um InGaAs MOCVD photodiodesWojtczuk, Steven / Colter, Peter C. / Jhabvala, Murzy D. et al. | 1997
- 204
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High-quantum-efficiency 2.2-m InGaAs MOCVD photodiodes [2999-31]Wojtczuk, S. N. / Colter, P. C. / Jhabvala, M. D. / SPIE et al. | 1997
- 211
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Monolithic InGaAs-on-silicon shortwave infrared detector arraysJoshi, Abhay M. / Brown, Rene / Fitzgerald, Eugene A. / Wang, Xinde / Ting, Steve M. / Bulsara, Mayank T. et al. | 1997
- 211
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Monolithic InGaAs-on-silicon shortwave infrared detector arrays [2999-32]Joshi, A. M. / Brown, R. / Fitzgerald, E. A. / Wang, X. / SPIE et al. | 1997
- 225
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Monolithic active pixel InGaAs focal plane arrays for near-infrared imaging [2999-33]Sarathy, J. / Gasparian, G. A. / Lange, M. J. / Cohen, M. J. / SPIE et al. | 1997
- 225
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Monolithic active pixel InGaAs focal plane arrays for near-infrared imagingSarathy, Jiten / Gasparian, George A. / Lange, Michael J. / Cohen, Marshall J. / Olsen, Gregory H. / Kim, Dong-Su / Studenkov, Pavel / Forrest, Stephen R. et al. | 1997
- 235
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Photodetectors of slit and sandwich types based on CdS and CdS1-xSexfilms obtained using MOCVD method from dithiocarbamatesZavyalova, Ludmila V. / Svechnikov, Sergey V. / Tchoni, Vladimir G. et al. | 1997
- 235
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Photodetectors of slit and sandwich types based on CdS and CdS~1~-~xSe~x films obtained using MOCVD method from dithiocarbamates [2999-35]Zavyalova, L. V. / Svechnikov, S. V. / Tchoni, V. G. / SPIE et al. | 1997
- 244
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Advances in astronomical UV image sensors and associated technologiesJoseph, Charles L. et al. | 1997
- 244
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Advances in astronomical UV image sensors and associated technologies (Invited Paper) [2999-39]Joseph, C. L. / SPIE et al. | 1997
- 259
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Requirements and design considerations of UV and x-ray detectors for astronomical purposesUlmer, Melville P. et al. | 1997
- 259
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Requirements and design considerations of UV and x-ray detectors for astronomical purposes (Invited Paper) [2999-36]Ulmer, M. P. / SPIE et al. | 1997
- 267
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Intrinsic Al~xGa~1~-~xN photodetectors for the entire compositional range [2999-42]Walker, D. / Zhang, X. / Saxler, A. / Kung, P. / SPIE et al. | 1997
- 267
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Intrinsic AlxGa1-xN photodetectors for the entire compositional rangeWalker, Danielle / Zhang, Xiaolong / Saxler, Adam W. / Kung, Patrick / Xu, Jianren / Razeghi, Manijeh et al. | 1997
- 275
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AlGaN ultraviolet detectorsRazeghi, Manijeh / Rogalski, Antoni et al. | 1997
- 275
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AlGaN ultraviolet detectors [2999-38]Razeghi, M. / Rogalski, A. / SPIE et al. | 1997
- 288
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Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates (Invited Paper) [2999-40]Ohsato, H. / Razeghi, M. / SPIE et al. | 1997
- 288
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Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substratesOhsato, Hitoshi / Razeghi, Manijeh et al. | 1997
- 298
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Growth of III-nitrides for photodetector applications [2999-50]Ferguson, I. / Tran, C. A. / Karlicek, R. F. / Feng, Z. C. / SPIE et al. | 1997
- 298
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Growth of III-nitrides for photodetector applicationsFerguson, Ian T. / Tran, Chuong A. / Karlicek, Robert F. / Feng, Zhe Chuan / Stall, Richard A. / Liang, Shaohua / Cai, W. / Li, Yuxin / Liu, Y. / Lu, Y. et al. | 1997
- 306
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High-sensitivity photodetectors made with charge-transfer polymer blends [2999-43]Yu, G. / Gao, J. / Yang, C. / Heeger, A. J. / SPIE et al. | 1997
- 306
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High-sensitivity photodetectors made with charge-transfer polymer blendsYu, Gang / Gao, Jun / Yang, Cuiying / Heeger, Alan J. et al. | 1997
- 316
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Highly sensitive and wideband optical detector in patterned YBa~2Cu~3O~7~4 thin film (Invited Paper) [2999-44]Tanaka, K. / Harada, Y. / Danerud, M. / Sekine, M. / SPIE et al. | 1997
- 316
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Highly sensitive and wideband optical detector in patterned YBa2Cu3O7-d thin filmTanaka, Ken'ichi / Harada, Yuichi / Danerud, Martin / Sekine, Matsuo / Ohtsu, Motoichi et al. | 1997
- 326
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Wavelength-selective photodetectors based on dye-superconductor assemblies (Invited Paper) [2999-45]Eames, S. J. / Jurbergs, D. C. / Gore, W. L. / Savoy, S. M. / SPIE et al. | 1997
- 326
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Wavelength-selective photodetectors based on dye-superconductor assembliesEames, Sara J. / Jurbergs, David C. / Savoy, Steven M. / Zhao, Jianai / McDevitt, John T. et al. | 1997
- 335
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Case for superconductivity associated primarily with charge-reservoirs rather than cuprate planesDow, John D. et al. | 1997
- 335
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Case for superconductivity associated primarily with charge-reservoirs rather than cuprate planes (Invited Paper) [2999-46]Dow, J. D. / SPIE et al. | 1997
- 348
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Room-temperature operation of a YBaCuO microbolometer [2999-47]Celik-Butler, Z. / Butler, D. P. / Jahanzeb, A. / Travers, C. M. / SPIE et al. | 1997
- 348
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Room-temperature operation of a YBaCuO microbolometerCelik-Butler, Zeynep / Butler, Donald P. / Jahanzeb, Agha / Gray, John E. / Travers, C.M. et al. | 1997
- 358
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Terahertz radiation from high-Tc superconducting films excited by femtosecond optical pulsesHangyo, Masanori et al. | 1997
- 358
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Terahertz radiation from high-T~c superconducting films excited by femtosecond optical pulses (Invited Paper) [2999-48]Hangyo, M. / SPIE et al. | 1997
- 371
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Spectral-component monitoring and control of pulsed laser deposition of YBCO filmsBiggers, Rand R. / Murray, Paul T. / Mast, David B. / Maartense, I. / Peterson, T. L. / Dempsey, D. / Varanasi, C. / Murray, S. / Lubbers, D. P. / Laube, S. et al. | 1997
- 371
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Spectral-component monitoring and control of pulsed laser deposition of YBCO films (Invited Paper) [2999-49]Biggers, R. R. / Murray, P. T. / Mast, D. B. / Maartense, I. / SPIE et al. | 1997
- 384
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MSM-photodetectors with corrugated metal-semiconductor-interface based on III-V semiconductorsDmitruk, Nikolas L. / Borkovskaya, Olga Y. / Mayeva, Olga I. / Mamikin, Sergey V. / Yastrubchak, Oxana B. et al. | 1997
- 384
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MSM photodetectors with corrugated metal-semiconductor interface based on III-V semiconductors [2999-12]Dmitruk, N. L. / Borkovskaya, O. Y. / Mayeva, O. I. / Mamikin, S. V. / SPIE et al. | 1997
- 391
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Comparative study of surface-plasma enhanced grating-coupled detectors [2999-13]Krishnaswami, K. / Tremblay, R. J. / Goodhue, W. D. / Karakashian, A. S. / SPIE et al. | 1997
- 391
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Comparative study of surface-plasma enhanced-grating coupled detectorsKrishnaswami, Kannan / Tremblay, Robert J. / Goodhue, William T. / Karakashian, Aram S. et al. | 1997
- 402
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Monolithically integrated resonant-cavity photodetectors for measurement and feedback control of spontaneous and stimulated emission [2999-14]Lott, J. A. / SPIE et al. | 1997
- 402
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Monolithically integrated resonant-cavity photodetectors for measurement and feedback control of spontaneous and stimulated emissionLott, James A. et al. | 1997
- 414
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High-performance guard ring p-i-n photodetectors for digital fiber optic communicationsOdubanjo, Babatunde / Wang, Chen-Show / Wang, Wen I. et al. | 1997
- 414
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High-performance guard ring p-i-n photodetectors for digital fiber optic communications [2999-15]Odubanjo, B. / Wang, C. S. / Wang, W. I. / SPIE et al. | 1997
- 424
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Time dependence of the magnetization in Ba2Sr2CaCu2Ox single crystal under zero field cooled conditionWang, Jin T. / Dawson, Wayne K. / Chinkhota, Manford / Lin, C. L. / Xu, M. / Chen, Ted et al. | 1997
- 424
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Time dependence of the magnetization in Ba~2Sr~2CaCu~2O~x single crystal under zero field cooled condition [2999-17]Wang, J. T. / Dawson, W. K. / Chinkhota, M. / Lin, L. / SPIE et al. | 1997
- 431
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Normal-incidence infrared modulators based on InAs/GaSb/AlSb quantum wells grown by molecular beam epitaxyAlperin, Jody / Du, Qinghong / Wang, Wen I. et al. | 1997
- 431
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Normal-incidence infrared modulators based on InAs/GaSb/AlSb quantum wells grown by molecular beam epitaxy [2999-18]Alperin, J. / Du, Q. / Wang, W. I. / SPIE et al. | 1997