Improving Adhesion of Polytetrafluoroethylene to Aluminum, Copper, and an Adhesive by Ar^+ Irradiation with and without Oxygen Environment (Englisch)
- Neue Suche nach: Koh, S.-K.
- Neue Suche nach: Park, S.-C.
- Neue Suche nach: Choi, C.-K.
- Neue Suche nach: Song, S.-K.
- Neue Suche nach: Koh, S.-K.
- Neue Suche nach: Park, S.-C.
- Neue Suche nach: Choi, C.-K.
- Neue Suche nach: Song, S.-K.
- Neue Suche nach: Poker, D. B.
In:
Ion-solid interactions for materials modification and processing
;
335-340
;
1996
-
ISBN:
- Aufsatz (Konferenz) / Print
-
Titel:Improving Adhesion of Polytetrafluoroethylene to Aluminum, Copper, and an Adhesive by Ar^+ Irradiation with and without Oxygen Environment
-
Beteiligte:Koh, S.-K. ( Autor:in ) / Park, S.-C. ( Autor:in ) / Choi, C.-K. ( Autor:in ) / Song, S.-K. ( Autor:in ) / Poker, D. B.
-
Kongress:Symposium, Ion-solid interactions for materials modification and processing ; 1995 ; Boston; MA
-
Erschienen in:MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 396 ; 335-340
-
Verlag:
- Neue Suche nach: Materials Research Society
-
Erscheinungsort:Pittsburgh
-
Erscheinungsdatum:01.01.1996
-
Format / Umfang:6 pages
-
Anmerkungen:Held as symposium A of the 1995 MRS Fall meeting
-
ISBN:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
-
Surface Effects During Ion Beam Processing of MaterialsAverback, R. S. / Ghaly, M. / Zhu, H. / Caturla, M. J. et al. | 1996
- 15
-
New Insight into Damage-Related Phenomena in Si Implanted Under Extreme ConditionsHolland, O. W. / Nielsen, B. / Budai, J. D. et al. | 1996
- 21
-
Dependence on Collision Time of Particle Ejection of Atom-Bombarded Single-Crystal SurfacesChang, C.-C. / Wang, S.-W. et al. | 1996
- 27
-
Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through Overlying Oxide LayersMorris, S. / Lim, D. / Yang, S.-H. / Tian, S. et al. | 1996
- 33
-
Tight-Binding Molecular Dynamics Simulations on Point Defects Diffusion and Interactions in Crystalline SiliconTang, M. / Colombo, L. / Diaz De la Rubia, T. et al. | 1996
- 39
-
A Molecular Dynamics Simulation Study of Defect Production in VanadiumMorishita, K. / Diaz De la Rubia, T. et al. | 1996
- 45
-
Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in SiliconCaturla, M.-J. / Diaz De la Rubia, T. / Jaraiz, M. / Gilmer, G. H. et al. | 1996
- 51
-
Depth Profiles of Medium Energy Phosphorus Implants into SiliconLavine, J. P. / Zheng, L. / Whalen, P. M. / Downey, D. F. et al. | 1996
- 57
-
In-Situ HVEM Studies of Radiation-Induced Segregation in Ni-Al Alloys During Simultaneous Irradiation with Electrons and IonsGiacobbe, M. J. / Lam, N. Q. / Okamoto, P. R. / Stubbins, J. F. et al. | 1996
- 63
-
The Ionization Degree of Ar Atoms Single Scattered from Pure Metal and Alloy SurfacesAbdulkasimov, F. B. / Ferleger, V. K. et al. | 1996
- 71
-
Role of Interface in Ion Mixing or Thermal Annealing Induced Amorphization in Multilayers in Some Immiscible SystemsLiu, B. X. / Zhang, Z. J. / Jin, O. / Pan, F. et al. | 1996
- 83
-
Ion Beam Mixing in Insulator SubstratesMcHargue, C. J. et al. | 1996
- 95
-
Enhancement of the Adhesion of Beryllium Films with Interfacial BeO to Carbon SubstratesMusket, R. G. / Wirtenson, O. R. et al. | 1996
- 101
-
Search for Ion Induced Mixing in Ceramic-Ceramic SystemsPadmanabhan, K. R. et al. | 1996
- 107
-
Examination of Interface Roughening in Ion Irradiated Cu/Nb Films by Computer Simulation and by X-ray DiffractionPartyka, P. J. / Averback, R. S. / Robinson, I. K. / Lee, Y. S. et al. | 1996
- 113
-
Irradiation Mixing of Al into U~3SiBirtcher, R. C. / Ding, F.-R. / Kestel, B. J. / Baldo, P. M. et al. | 1996
- 119
-
Modification of the Structure-Phase State of Coatings by Ion Implantation TechniquesKorotaev, A. D. / Tyumentsev, A. N. / Pinzhin, Y. P. / Safarov, A. F. et al. | 1996
- 127
-
Damage in Refractory Oxides and Ion Beam Mixing at Metal-Oxide Interfaces Induced by GeV Ions and 20 MeV Cluster BeamThevenard, P. A. / Beranger, M. / Canut, B. / Ramos, S. M. M. et al. | 1996
- 137
-
Cantilever Beam Stress Measurements During Ion IrradiationVan Sambeek, A. I. / Averback, R. S. et al. | 1996
- 143
-
Sputter Roughening Instability on the Ge(001) Surface: Energy and Flux DependenceChason, E. / Mayer, T. M. / Kellerman, B. K. et al. | 1996
- 149
-
Lateral Sputtering by Gas Cluster Ion Beams and its Applications to Atomic Level Surface ModificationYamada, I. / Matsuo, J. et al. | 1996
- 155
-
Growth of Vacancy Clusters During Post-Irradiation Annealing of Ion Implanted SiliconVan Veen, A. / Schut, H. / Rivera, A. / Fedorov, A. V. et al. | 1996
- 161
-
In Situ Ion Beam Analysis of Radiation Damage Kinetics in MgTiO~3 Single Crystals at 170-470 KYu, N. / Mitchell, J. N. / Sickafus, K. E. / Hastasi, M. et al. | 1996
- 167
-
Effects of Arsenic Deactivation on Arsenic-Implant Induced Enhanced Diffusion in SiliconDokumaci, O. / Law, M. E. / Krishnamoorthy, V. / Jones, K. S. et al. | 1996
- 173
-
A Comparative Study of Radiation Damage in Al~2O~3, FeTiO~3, and MgTiO~3Mitchell, J. N. / Yu, N. / Sickafus, K. E. / Nastasi, M. et al. | 1996
- 179
-
Effect of Cascade Remnants on Freely Migrating Defects in Cu - 1% Au AlloysIwase, A. / Rehn, L. E. / Baldo, P. M. / Funk, L. et al. | 1996
- 185
-
Interaction of Alpha Particle Beams With Fe-Based and FeNi-Based Glassy FerromagnetsSorescu, M. / Barb, D. et al. | 1996
- 191
-
Effects of High Energy Ion Irradiation on Crystallization of Amorphous Germanium Films Deposited on Calcium Fluoride SubstratesNakao, S. / Saitoh, K. / Ikeyama, M. / Niwa, H. et al. | 1996
- 195
-
Effects of Ion Beam Irradiation on the Crystallization of Copper FilmsHishita, S. / Oyeshi, K. / Suehara, S. / Aizawa, T. et al. | 1996
- 201
-
Molecular Dynamics Studies of the Ion Beam Induced Crystallization in SiliconMarques, L. A. / Caturla, H.-J. / Huang, H. / Diaz De la Rubia, T. et al. | 1996
- 207
-
Growth of Si~1~-~xSn~x Layers on Si by Ion-Beam-Induced Epitaxial Crystallization (IBIEC) and Solid Phase Epitaxial Growth (SPEG)Kobayashi, N. / Hasegawa, M. / Hayashi, N. / Katsumata, H. et al. | 1996
- 215
-
Optical Switching of Coherent VO~2 Precipitates Embedded in SapphireGea, L. A. / Boatner, L. A. / Budai, J. D. / Zuhr, R. A. et al. | 1996
- 221
-
Study of Diamond Nucleation on Silicon Using Direct Negative Carbon Ion Beam SourceKo, Y. W. / Ahn, Y. O. / Sohn, M. H. / Park, Y. et al. | 1996
- 227
-
Structural Disorder in Hard Amorphous Carbon Films Implanted With Nitrogen IonsFreire, F. L. / Franceschini, D. F. / Achete, C. A. / Brusa, R. S. et al. | 1996
- 233
-
Scanning Tunneling Microscopy and Atomic Force Microscopy of Au Implanted in Highly Oriented Pyrolytic GraphiteTung, Y. S. / Ueda, A. / Henderson, D. O. / Mu, R. et al. | 1996
- 239
-
Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon CarbideSuvorov, A. V. / Usov, I. O. / Sokolov, V. V. / Suvorova, A. A. et al. | 1996
- 243
-
Modification of Magnetron Sputtered a-Si~1~-~xC~x:H Films by Implantation of Sn^+Tzenov, N. / Dimova-Malinovska, D. / Tsvetkova, T. et al. | 1996
- 249
-
Formation of Ultra-Thin Silicon Oxynitride Films by Low-Energy Nitrogen ImplantationDiniz, J. A. / Tatsch, P. J. / Kretly, L. C. / Queiroz, J. E. C. et al. | 1996
- 255
-
Carbon Nitride (CN~x) Films Formed by Ion Implantation into Thin Carbon FilmsHusein, I. F. / Zhou, Y. / Chan, C. / Kleiman, J. I. et al. | 1996
- 261
-
The Improvement of Mechanical Properties of Aluminum Nitride and Alumina by 1 keV Ar^+ Ion Irradiation in Reactive Gas EnvironmentKoh, S. K. / Son, Y.-B. / Gam, J.-S. / Kim, C.-J. et al. | 1996
- 267
-
A Novel Etching Method of Single Crystalline Al~2O~3 Film on Si and Sapphire Using Si Ion ImplantationKim, H. / Ishida, M. / Nakamura, T. et al. | 1996
- 273
-
Ion Induced Damage and Their Annealing in LiTaO~3 Single CrystalZhang, Z. / Rusakova, I. A. / Chu, W. K. et al. | 1996
- 279
-
Bombarding Effects of Gas Cluster Ion Beams on Sapphire Surfaces; Characteristics of Modified Layers and their Mechanical and Optical PropertiesTakeuchi, D. / Matsuo, J. / Yamada, I. et al. | 1996
- 285
-
Deposition of Lead-Silicate Glassy Thin Coatings by RF Magnetran Sputtering: Correlation Between Deposition Parameters and Electrical and Structural PropertiesRigato, V. / Maggioni, G. / Boscarino, D. / Della Mea, G. et al. | 1996
- 291
-
Persistent Photoconductivity Study on Ion Irradiated Carbon FilmsBhattacharyya, S. / Kanjilal, D. / Subramanyam, S. V. et al. | 1996
- 299
-
Modification of the Wettability of Plexiglas and Carbon by Means of Ion Beam Implantation: Application to Fluid Management and Materials Processing in MicrogravityFageau, J. F. / Ross, G. G. / Couture, E. / Poirier, A. et al. | 1996
- 305
-
Versatile Applications of Ion Implanted PolymersGiedd, R. E. / Wang, Y. Q. / Moss, M. G. / Kaufmann, J. et al. | 1996
- 311
-
Proton Modification of Ultra High Molecular Weight Polyethylene to Promote Crosslinking for Enhanced Chemical and Physical PropertiesWilson, J. F. / Liu, J. R. / Romero-Borja, F. / Chu, W. K. et al. | 1996
- 317
-
Structuring of Conducting Polymers by Ion ImplantationEdinger, K. / Schiestel, S. / Wolf, G. K. et al. | 1996
- 323
-
Ion Beam Modification of PVDC and PE PolymersEvelyn, A. L. / Ila, D. / Fisher, J. / Poker, D. B. et al. | 1996
- 329
-
Suspended Conductive Polymer Bridges from Ion Implanted PolymersKaufmann, J. / Moss, M. G. / Wang, Y. / Giedd, R. E. et al. | 1996
- 335
-
Improving Adhesion of Polytetrafluoroethylene to Aluminum, Copper, and an Adhesive by Ar^+ Irradiation with and without Oxygen EnvironmentKoh, S.-K. / Park, S.-C. / Choi, C.-K. / Song, S.-K. et al. | 1996
- 341
-
Changes of Wettability and Surface Energy of Polymer by keV Ar^+ Ion IrradiationCho, J.-S. / Choi, W.-K. / Ki Hyun Yoon / Jung, H.-J. et al. | 1996
- 347
-
Chemical Reaction Between Polymers (PC, PMMA, and PET) and Oxygen Gas During Ar^+ IrradiationPark, S.-C. / Jung, H.-J. / Koh, S.-K. et al. | 1996
- 355
-
Structural and Optical Properties of Rare-Earth Doped Lithium Niobate Waveguides Formed by MeV Helium ImplantationHerreros, B. / Lifante, G. / Cusso, F. / Kling, A. et al. | 1996
- 361
-
Loss Measurements of Stoichiometric Ti and O Implanted LiNbO~3 WaveguidesWilliams, E. K. / Ila, D. / Sarkisov, S. / Venkateswarlu, P. et al. | 1996
- 365
-
Defect Creation by Electronic Processes in MgO Bombarded With GeV Heavy IonsBeranger, M. / Thevenard, P. / Brenier, R. / Balanzat, E. et al. | 1996
- 371
-
MeV Ion Beam Induced Index of Refraction Changes in Layered GaAs/AlGaAs WaveguidesTaylor, T. / Ila, D. / Zimmerman, R. L. / Ashley, P. R. et al. | 1996
- 377
-
Nanocrystals and Quantum Dots Formed by High-Dose Ion ImplantationWhite, C. W. / Budai, J. D. / Zhu, J. G. / Withrow, S. P. et al. | 1996
- 385
-
Silver Cluster Formation in Implanted Al~2O~3 Single CrystalsFreire, F. L. / Broll, N. / Mariotto, G. et al. | 1996
- 391
-
Optical Properties of Multi-Component Antimony-Silver Nanoclusters Formed in Silica by Sequential Ion ImplantationZuhr, R. A. / Magruder, R. H. / Anderson, T. S. et al. | 1996
- 397
-
The Role of Glass Structure in the Formation of Implanted Gold Nanoclusters for Enhanced Nonlinear Optical PropertiesArnold, G. W. / Battaglin, G. / Boscolo-Boscoletto, A. / Mazzoldi, P. et al. | 1996
- 403
-
Nanocrystal Formation via Yttrium Ion Implantation into SapphireHunt, E. M. / Hampikian, J. M. / Poker, D. B. et al. | 1996
- 411
-
Optical and Magnetic Properties of Silica Implanted with N^+ and Fe^+Isobe, T. / Weeks, R. A. / Zuhr, R. A. et al. | 1996
- 417
-
Waveguide Formation in Silica by Implantation with Si, P and Ge IonsLeech, P. W. / Ridgway, M. C. et al. | 1996
- 423
-
Ion Beam-Induced Changes in Optical Properties of MgOQian, Y. / Ila, D. / He, K. X. / Curley, M. et al. | 1996
- 429
-
Proton Induced Defect Formation in Quartz GlassesGulamova, R. R. / Gasanov, E. M. / Alimov, R. et al. | 1996
- 435
-
Ion-Beam-Assisted Deposition of Metal Nanocluster Thin Films with Nonlinear Optical PropertiesCotell, C. M. / Carosella, C. A. / Flom, S. R. / Schiestel, S. et al. | 1996
- 441
-
Vibrational and Electronic Transition in Inks Quantum Dots Formed by Sequential Implantation of In and As in a-SiO~2Ueda, A. / Henderson, D. O. / Mu, R. / Tung, Y.-S. et al. | 1996
- 447
-
Synthesis and Properties of GaAs Nanocrystals in SiO~2 Formed by Ion ImplantationZhu, J. G. / White, C. W. / Wallis, D. J. / Budai, J. D. et al. | 1996
- 455
-
Materials Science Issues of Plasma Source Ion ImplantationNastasi, M. / Elmoursi, A. A. / Faehl, R. J. / Hamdi, A. H. et al. | 1996
- 467
-
New Developments in Metal Ion Implantation by Vacuum Arc Ion Sources and Metal Plasma ImmersionBrown, I. G. / Anders, A. / Anders, S. / Dickinson, M. R. et al. | 1996
- 479
-
Residual Stress Control by Ion Beam Assisted DepositionWas, G. S. / Jones, J. W. / Parfitt, L. / Kalnas, C. E. et al. | 1996
- 491
-
Titanium Nitride Formation by Low Energy Ar Ion Bombardment and UV-Light Irradiation During DepositionGerlach, J. W. / Wengenmair, H. / Stritzker, B. / Rauschenbach, B. et al. | 1996
- 497
-
Low-Energy Deposition of High-Strength Al(O) Alloys from an ECR PlasmaBarbour, J. C. / Follstaedt, D. M. / Knapp, J. A. / Marshall, D. A. et al. | 1996
- 503
-
Dual Ion Beam Sputtering of Carbides for EUV ReflectanceSchwarcz, D. / Keski-Kuha, R. A. M. et al. | 1996
- 509
-
Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction FormationQin, S. / Bernstein, J. D. / Chan, C. et al. | 1996
- 515
-
Short-Time Hydrogen Passivation of Poly-Si CMOS Thin Film Transistors by High Dose Rate Plasma Ion ImplantationQin, S. / Bernstein, J. D. / Zhou, Y. / Liu, W. et al. | 1996
- 521
-
An Apparatus for Magnetran Sputter Coating and Plasma Immersion Ion ImplantationEnsinger, W. / Hartmann, J. / Klein, J. / Usedom, P. et al. | 1996
- 527
-
Using Electron Cyclotron Resonance Plasma for Depositing Epitaxial Titanium Nitride Thin FilmsMurzin, I. H. / Hayashi, N. / Sakamoto, I. et al. | 1996
- 533
-
Effect of Hydrogenation on the Electrical and Optical Properties of GaSbDutta, P. S. / Bhat, H. L. / Kumar, V. et al. | 1996
- 539
-
Deposition of High Quality SiO~2 Films Using TEOS by ECR PlasmaSano, K. / Tamamaki, H. / Nomura, M. / Wickramanayaka, S. et al. | 1996
- 545
-
Carbon Nitride Formation by Plasma Assisted Ion Beam DepositionTompa, G. S. / Murzin, I. H. / Kim, S. I. / Ahn, Y. O. et al. | 1996
- 551
-
Low-Temperature (Karimy, H. / Tobin, E. / Bricault, R. / Cremins-Costa, A. et al. | 1996
- 557
-
Deposition of Boron Nitride Coatings by Reactive rf Magnetron Sputtering: Correlation Between Boron and Nitrogen Contents and the Flux of Energetic Ar^+ Ions at the SubstrateRigato, V. / Spolaore, M. / Della Mea, G. et al. | 1996
- 563
-
Ion Beam Reactive Sputter-Deposition of Silicon and Zirconium OxidesPringle, S. D. / Valizadeh, R. / Colligon, J. S. / Faunce, C. A. et al. | 1996
- 569
-
Ion Beam Assisted Deposition of Si-Diamond-Like Carbon Coatings on Large Area SubstratesFountzoulas, C. G. et al. | 1996
- 575
-
Deposition of Cu Films for Laser Mirror by Partially Ionized Beam DepositionKoh, S.-K. / Yoon, Y.-S. / Kim, K.-H. / Jang, H.-G. et al. | 1996
- 581
-
Controls of Crystallinity and Surface Roughness of Cu Film in Partially Ionized Beam DepositionKoh, S.-K. / Kim, K.-H. / Choi, W.-K. / Jang, H.-G. et al. | 1996
- 587
-
Thin Mo Films Deposited and Analyzed Using Sub-keV Noble Gas IonsVan der Kuur, J. / Melker, E.-J. E. / Huijgen, T. P. / Hoondert, W. H. B. et al. | 1996
- 593
-
Growth and Structure of Thin Films by High-Intensity Pulsed Ion-Beam DepositionIvanov, Y. F. / Matvienko, V. M. / Potyomkin, A. V. / Remnev, G. E. et al. | 1996
- 599
-
Characterization of Defects Created in Silicon Due to Etching in Low-Pressure Plasmas Containing Fluorine and OxygenBuyanova, I. A. / Henry, A. / Monemar, B. / Lindstroem, J. L. et al. | 1996
- 605
-
TEM and X-ray Investigation of Single Crystal-Like Zirconia Films Fabricated by Dual Ion Beam DepositionRessler, K. G. / Sonnenberg, N. / Cima, M. J. et al. | 1996
- 611
-
Growth of Tin Oxide Film Deposited by a Hybrid Ion BeamChoi, W. K. / Cho, J. S. / Song, S. K. / Jung, H.-J. et al. | 1996
- 617
-
Crystalline Structure and Composition of Tin Oxide Film Grown by Reactive Ion Assisted Deposition as a Function of Average Irradiating EnergyChoi, W. K. / Song, S. K. / Cho, J. S. / Jung, H.-J. et al. | 1996
- 623
-
Design of a Compact Negative Metal Ion Beam Source for Surface StudiesPark, Y. / Ko, Y. W. / Sohn, M. H. / Kim, S. I. et al. | 1996
- 629
-
A Novel Rectilinear Negative Carbon Ion Beam Source for Large-Area Amorphous Diamond Like Carbon CoatingsSohn, M. H. / Ahn, Y. O. / Ko, Y. W. / Park, Y. et al. | 1996
- 635
-
Ion Sources for Ion Beam Assisted Thin Film DepositionSvadkovski, I. V. / Dostanko, A. P. et al. | 1996
- 641
-
New Instrumentation in Argonne's HVEM-Tandem Facility: Expanded Capability for In Situ Ion Beam StudiesAllen, C. W. / Funk, L. L. / Ryan, E. A. et al. | 1996
- 649
-
Nanoscale/Multilayer Gradient Materials for Application in the Electromagnetic Gun SystemsOtooni, M. A. / Brown, I. G. / Anders, S. / Wang, Z. et al. | 1996
- 661
-
Carbon, Nitrogen, and Oxygen Ion Implantation of Stainless SteelRej, D. J. / Gavrilov, N. V. / Emlin, D. / Henins, I. et al. | 1996
- 667
-
Friction Change Induced by Single MeV Ion Impact Measured by Scanning Probe MicroscopeOgiso, H. / Nakano, S. / Tokumoto, H. / Yamanaka, K. et al. | 1996
- 675
-
Focused Ion Beam MetrologyWagner, A. / Blauner, P. / Longo, P. / Cohen, S. et al. | 1996
- 687
-
The Gas Field Ion Source for Finely Focused Ion Beam SystemsThompson, W. / Armstrong, A. / Etchin, S. / Percival, R. et al. | 1996
- 695
-
High Conductivity FIB Deposited MetalBlauner, P. G. / Wagner, A. et al. | 1996
- 701
-
Formation of Buried Two-Dimensional Electron Gas in GaAs by Si Ion Doping Using MBE-FIB Combined SystemYanagisawa, J. / Nakayama, H. / Wakaya, F. / Yuba, Y. et al. | 1996
- 709
-
On the Influence of Illumination During Ion Damage Defect Anneal of SiliconTanabe, A. / Ashok, S. et al. | 1996
- 715
-
The Detailed Dependence of Implanted Phosphorus Profiles in (100) Single-Crystal Si on Key Implant ParametersGhante, V. / Lam, L. M. / Morris, S. / Yang, S.-H. et al. | 1996
- 721
-
Hyperthinning of Silicon and SiO~2 for Low Power Electronic ApplicationsOakes, D. B. / Gelb, A. / Green, B. D. / Pirri, A. N. et al. | 1996
- 727
-
Synthesis of Thin Membranes in Si Technology by Carbon Ion ImplantationSerre, C. / Perez-Rodriguez, A. / Calvo-Barrio, L. / Romano-Rodriguez, A. et al. | 1996
- 733
-
Diffusion, Precipitation, and Cavity-Wall Reactions of Ion-Implanted Gold in SiliconMyers, S. M. / Petersen, G. A. et al. | 1996
- 739
-
Anomalous Leakage Current Reduction by Ramping Rate Control in MeV ImplantationHamada, K. / Nishio, N. / Saito, S. et al. | 1996
- 745
-
Properties of Silicon-on-Defect-Layer MaterialLi, J. / Jones, K. W. / Coleman, J. H. / Yi, J. et al. | 1996
- 751
-
Investigation of Lateral and Vertical Profiles Enhanced by ImplantationMineji, A. / Hamada, K. / Saito, S. et al. | 1996
- 757
-
Ion Implantation Damage and B Diffusion in Low Energy B Implantation with Ge PreimplantationKase, M. / Mori, H. et al. | 1996
- 763
-
AFM Study of Surface Morphology of High Dose Co Implanted Si with a MEVVA Ion SourcePeng, Q. / Wong, S. P. / Xu, J. B. / Wilson, I. H. et al. | 1996
- 769
-
Detailed Analysis and Computationally Efficient Modeling of Ultra-Shallow Dopant Profiles Obtained by Low Energy B, BF~2, and As Ion ImplantationParab, K. B. / Yang, S.-H. / Morris, S. J. / Tian, S. et al. | 1996
- 775
-
Low Temperature Phase Transition (PT) and Defect Formation (DF) in Silicon with Dioxide Inclusions Under X-ray IrradiationMakhkamov, S. M. / Abdurakhmanova, S. N. et al. | 1996
- 781
-
MeV Ion Induced Damages and their Annealing Behavior in SiliconCho, N.-H. / Jang, K.-W. / Lee, J.-Y. / Ro, J.-S. et al. | 1996
- 789
-
Carbon Implantation in Al~x Ga~1~-~x AsPearton, S. J. / Abernathy, C. R. et al. | 1996
- 795
-
Optical and Electrical Properties of Heavily Carbon-Doped GaAs Fabricated by High-Energy Ion-ImplantationShima, T. / Makita, Y. / Kimura, S. / Harada, K. et al. | 1996
- 801
-
Cavity Nucleation and Evolution in He-Implanted Si and GaAsFollstaedt, D. M. / Myers, S. M. / Petersen, G. A. / Barbour, J. C. et al. | 1996
- 807
-
The Effects of Low Energy Ion-Beam Milling on the Physical and Electrical Properties of n-GaAsSeng, W. F. / Barnes, P. A. / Lovejoy, M. L. / Fu, L. P. et al. | 1996
- 815
-
Ion Beam Assisted Quantum Well IntermixingGoldberg, R. D. / Mitchell, I. V. / Charbonneau, S. / Poole, P. et al. | 1996
- 823
-
Irradiation-Induced Damage and Intermixing of GaAs-AlGaAs Quantum WellsTan, H. H. / Williams, J. S. / Jagadish, C. / Burke, P. T. et al. | 1996
- 829
-
Dose and Doping Dependence of Damage Annealing in Fe MeV Implanted InPCarnera, A. / Fraboni, B. / Gasparotto, A. / Priolo, F. et al. | 1996
- 835
-
High-Energy Ion-Implantation of a Moderately Deep Acceptor Hg Into Liquid Encapsulated Czochralski Grown GaAs: Formation of New Shallow Emission BandsHarada, K. / Makita, Y. / Shibata, H. / Lo, B. et al. | 1996
- 841
-
Annealing Effect of Cd^+ Ion-Implanted Liquid Encapsulated Czochralski-GaAsKawasumi, Y. / Makita, Y. / Kimura, S. / Iida, T. et al. | 1996
- 847
-
Suppression of Secondary Defects in Silicon by Carbon ImplantationSimpson, T. W. / Mitchell, I. V. et al. | 1996
- 853
-
The Fabrication of Complex Membrane Structures in n-GaAs for Micromechanical ApplicationsMiao, J. / Weiss, B. L. / Hartnagel, H. L. / Wilson, R. J. et al. | 1996
- 859
-
Energetic Ion Beams in Semiconductor Processing: Summary of a DOE Panel StudyPicraux, S. T. / Chason, E. / Poate, J. M. / Borland, J. O. et al. | 1996
- 871
-
Ion Mixing in Film-Substrate Systems Under Polyenergetic Ar^+ Ion Beam IrradiationKalin, B. A. / Volkov, N. V. / Gladkov, B. P. / Sabo, S. E. et al. | 1996
- 877
-
MeV Ion Beam Synthesis of Well-Defined Buried 3C-SiC Layers in SiliconLindner, J. K. N. / Goetz, B. / Frohnwieser, A. / Stritzker, B. et al. | 1996
- 883
-
Structural and Magnetic Properties of Ion Beam Deposited Ag~(~1~-~x~)Fe~x FilmsKhan, H. R. / Loebich, O. et al. | 1996