The analysis of nanopipes and inversion domains in GaN thin films (Englisch)
- Neue Suche nach: Cherns, D.
- Neue Suche nach: Young, W. T.
- Neue Suche nach: Saunders, M. A.
- Neue Suche nach: Ponce, F. A.
- Neue Suche nach: Royal Microscopical Society
- Neue Suche nach: Cherns, D.
- Neue Suche nach: Young, W. T.
- Neue Suche nach: Saunders, M. A.
- Neue Suche nach: Ponce, F. A.
- Neue Suche nach: Cullis, A. G.
- Neue Suche nach: Hutchison, J. L.
- Neue Suche nach: Royal Microscopical Society
In:
Microscopy of semiconducting materials
;
187-190
;
1997
-
ISBN:
-
ISSN:
- Aufsatz (Konferenz) / Print
-
Titel:The analysis of nanopipes and inversion domains in GaN thin films
-
Beteiligte:Cherns, D. ( Autor:in ) / Young, W. T. ( Autor:in ) / Saunders, M. A. ( Autor:in ) / Ponce, F. A. ( Autor:in ) / Cullis, A. G. / Hutchison, J. L. / Royal Microscopical Society
-
Kongress:Conference; 10th, Microscopy of semiconducting materials ; 1997 ; Oxford
-
Erschienen in:Microscopy of semiconducting materials ; 187-190CONFERENCE SERIES - INSTITUTE OF PHYSICS ; 157 ; 187-190
-
Verlag:
- Neue Suche nach: Institute of Physics
-
Erscheinungsort:Philadelphia
-
Erscheinungsdatum:01.01.1997
-
Format / Umfang:4 pages
-
ISBN:
-
ISSN:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
The materials basis behind the telecommunications revolutionBrinkman, W. F. / Royal Microscopical Society et al. | 1997
- 13
-
The evolution of electron beam lithography and metrology for semiconductor technologiesMatsuo, T. / Royal Microscopical Society et al. | 1997
- 25
-
The structures of extended defects in Si and other materials studied by HRTEMTakeda, S. / Royal Microscopical Society et al. | 1997
- 35
-
Defect structure of InSb grown within a synthetic opal matrixBogomolov, V. N. / Hutchison, J. L. / Samoilovich, S. M. / Kurdyukov, D. A. / Royal Microscopical Society et al. | 1997
- 39
-
Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice imagesRosenauer, A. / Remmele, T. / Fischer, U. / Foerster, A. / Royal Microscopical Society et al. | 1997
- 43
-
New intermediate defect configuration in Si studied by in situ HREM irradiationFedina, L. / Gutakovskii, A. / Aseev, A. / Van Landuyt, J. / Royal Microscopical Society et al. | 1997
- 47
-
A study of interdiffusion and germanium segregation in low-pressure chemical vapour deposition of SiGe/Si quantum wellsWalther, T. / Humphreys, C. J. / Cullis, A. G. / Robbins, D. J. / Royal Microscopical Society et al. | 1997
- 55
-
In-situ HREM irradiation study of point defect clustering in strained Ge~xSi~1~-~x/(001)Si heterostructureFedina, L. / Lebedev, O. / Van Tendeloo, G. / Van Landuyt, J. / Royal Microscopical Society et al. | 1997
- 59
-
Structural characterisation of MnSb/GaAs and MnSb/Si heterostructures grown by hot-wall epitaxyTatsuoka, H. / Brown, P. D. / Xin, Y. / Isaji, K. / Royal Microscopical Society et al. | 1997
- 63
-
Atomic modelling and HREM-imaging of dislocations associated with steps at Si/Si(001) vicinal interfacesBelov, A. Y. / Conrad, D. / Scheerschmidt, K. / Goesele, U. / Royal Microscopical Society et al. | 1997
- 67
-
The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imagingLiu, C. P. / Boothroyd, C. B. / Brown, P. D. / Humphreys, C. J. / Royal Microscopical Society et al. | 1997
- 71
-
Electron diffraction from cross-sectional semiconductor heterointerfaces using subnanometer electron probesRadefeld, A. / Lakner, H. / Royal Microscopical Society et al. | 1997
- 75
-
The use of electron holography for composition profiling of semiconductor heterostructuresMidgley, P. A. / Barnard, J. / Cherns, D. / Royal Microscopical Society et al. | 1997
- 79
-
Imaging dislocation kinks, their motion and pinning in SiSpence, J. C. H. / Kolar, H. R. / Alexander, H. / Royal Microscopical Society et al. | 1997
- 91
-
Analytical expression for the kink profilePolyakov, M. E. / Royal Microscopical Society et al. | 1997
- 95
-
Domain boundaries in epitaxial GaN grown on {111}B GaAs and GaP by molecular beam epitaxyXin, Y. / Brown, P. D. / Cheng, T. S. / Foxon, C. T. / Royal Microscopical Society et al. | 1997
- 99
-
Basal and non-basal dislocations in deformed aluminium nitrideFeregotto, V. / George, A. / Michel, J. P. / Royal Microscopical Society et al. | 1997
- 103
-
Structure of the GaAs/InP interface obtained by wafer fusionPatriarche, G. / Jeannes, F. / Oudar, J. L. / Glas, F. / Royal Microscopical Society et al. | 1997
- 107
-
Influence of light illumination on the rosette microstructure in indented GaAs and the photoplastic effectKoubaiti, S. / Couderc, J. J. / Levade, C. / Vanderschaeve, G. / Royal Microscopical Society et al. | 1997
- 111
-
Dislocation behaviour in strained layer interfacesGoodhew, P. J. / MacPherson, G. / Royal Microscopical Society et al. | 1997
- 121
-
A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial Ge~xSi~1~-~x on SiHirsch, P. B. / Royal Microscopical Society et al. | 1997
- 127
-
Controlling misfit dislocation generation in strained layer epitaxy by point defect injectionStirpe, M. B. / Perovic, D. D. / Lafontaine, H. L. / Goldberg, R. D. / Royal Microscopical Society et al. | 1997
- 131
-
Defect distribution in compositionally graded epitaxial SiGe layers on Si substratesLyutovich, K. / Ernst, F. / Banhart, F. / Silier, I. / Royal Microscopical Society et al. | 1997
- 135
-
On the growth of high quality relaxed Si~1~-~xGe~x layers on Si by vapour phase epitaxyPidduck, A. J. / Robbins, D. J. / Wallis, D. / Williams, G. M. / Royal Microscopical Society et al. | 1997
- 145
-
Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealingBeanland, R. / Lourenco, M. A. / Homewood, K. P. / Royal Microscopical Society et al. | 1997
- 149
-
Correlation between defects, residual strain and morphology in continuously graded InGaAs/GaAs buffersLazzarini, L. / Ferrari, C. / Gennari, S. / Bosacchi, A. / Royal Microscopical Society et al. | 1997
- 153
-
The stacking faults in GaSb/(001)GaAs heterostructureRocher, A. M. / Royal Microscopical Society et al. | 1997
- 157
-
Stacking fault trapezoids, stacking fault tubes and stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayersFung, K. K. / Wang, N. / Sou, I. K. / Royal Microscopical Society et al. | 1997
- 161
-
Global plastic relaxation of strained-layer superlattices with non-compensated strainsPatriarche, G. / Rao, E. V. K. / Ougazzaden, A. / Glas, F. / Royal Microscopical Society et al. | 1997
- 165
-
Critical thickness of quantum-well structures: modified Matthews-Blakeslee formula and experimental support gathered by means of synchroton x-ray reflection topographyMoeck, P. / Tanner, B. K. / Lacey, G. / Whitehouse, C. R. / Royal Microscopical Society et al. | 1997
- 169
-
Crack interactions in tensile-strained epilayersMurray, R. T. / Kiely, C. J. / Hopkinson, M. / Royal Microscopical Society et al. | 1997
- 173
-
Structural characterisation of GaN layers: influence of polarity and strain releaseRouviere, J.-L. / Arlery, M. / Bourret, A. / Royal Microscopical Society et al. | 1997
- 183
-
Polarity study by CBED of GaN films grown on (0001)~S~i 6H-SiCVermaut, P. / Ruterana, P. / Nouet, G. / Salvador, A. / Royal Microscopical Society et al. | 1997
- 187
-
The analysis of nanopipes and inversion domains in GaN thin filmsCherns, D. / Young, W. T. / Saunders, M. A. / Ponce, F. A. / Royal Microscopical Society et al. | 1997
- 191
-
HREM study of the {1010} inversion domains in GaN grown on (0001) sapphire substratesPotin, V. / Ruterana, P. / Nouet, G. / Salvador, A. / Royal Microscopical Society et al. | 1997
- 195
-
Growth of GaN layers on nitrided GaAs/Si and GaAs/SIMOX composite substrates by OMVPEHu, C. / Nuhfer, N. T. / Mahajan, S. / Yang, J. W. / Royal Microscopical Society et al. | 1997
- 199
-
Crystal defects and optical properties of GaN grown with different techniques: stacking fault related luminescenceSalviati, G. / Zanotti-Fregonara, C. / Albrecht, M. / Christiansen, S. / Royal Microscopical Society et al. | 1997
- 205
-
Heteroepitaxy of cubic GaN: influence of interface structureTrampert, A. / Brandt, O. / Yang, H. / Yang, B. / Royal Microscopical Society et al. | 1997
- 209
-
Highly spatially resolved electron energy loss spectroscopy in the bandgap regimeBangert, U. / Harvey, A. / Keyse, R. / Freundt, D. / Royal Microscopical Society et al. | 1997
- 213
-
Developing a methodology for the electron energy-loss spectroscopy of defects in GaNNatusch, M. K. H. / Botton, G. A. / Humphreys, C. J. / Royal Microscopical Society et al. | 1997
- 217
-
Probing the effect of defects on band structure in GaNTricker, D. M. / Natusch, M. K. H. / Boothroyd, C. B. / Xin, Y. / Royal Microscopical Society et al. | 1997
- 221
-
STEM characterisation of MOVPE-grown (In, Ga) N quantum wellsBrockt, G. / Mendorf, C. / Radefeld, A. / Scholz, F. / Royal Microscopical Society et al. | 1997
- 227
-
TEM characterisation of GaN grown on sapphirePecz, B. / Di Forte-Poisson, M. A. / Toth, L. / Radnoczi, G. / Royal Microscopical Society et al. | 1997
- 231
-
On the microstructure of GaN buffer layers grown at low temperatures on (0001) sapphireSelke, H. / Einfeldt, S. / Birkle, U. / Hommel, D. / Royal Microscopical Society et al. | 1997
- 235
-
Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphireMohammed, A. / Trager-Cowan, C. / Middleton, P. G. / O'Donnell, K. P. / Royal Microscopical Society et al. | 1997
- 239
-
Mechanisms of strain-induced surface ripple formation and dislocation multiplication in Si~xGe~1~-~x thin filmsJesson, D. E. / Chen, K. M. / Pennycook, S. J. / Thundat, T. / Royal Microscopical Society et al. | 1997
- 247
-
Kinetic critical thickness for morphological instability in GeSi/Si strained layer epitaxyBahierathan, B. / Perovic, D. D. / Lafontaine, H. / Royal Microscopical Society et al. | 1997
- 251
-
Decomposition analysis of Ga~xIn~1~-~xAs~yP~1~-~y heterostructures by STEMMendorf, C. / Brockt, G. / Liu, Q. / Schulze, F. / Royal Microscopical Society et al. | 1997
- 257
-
Investigations of ordering in AlGaInPDunbar, A. / Hall, S. / Halsall, M. / Bangert, U. / Royal Microscopical Society et al. | 1997
- 261
-
Structural characteristics of highly ordered (GaIn)PJiang, J. C. / Schaper, A. K. / Spika, Z. / Stolz, W. / Royal Microscopical Society et al. | 1997
- 265
-
The effect of substrate misorientation on atomic ordering in Ga~0~.~5~2In~0~.~4~8P epilayers grown on GaAs (001) substrates by gas-source MBEMeenakarn, C. / Staton-Bevan, A. E. / Dawson, M. D. / Duggan, G. / Royal Microscopical Society et al. | 1997
- 269
-
Study of the structural and optical properties of ordered domains in GaInP alloysNasi, L. / Fermi, F. / Ferrari, C. / Francesio, L. / Royal Microscopical Society et al. | 1997
- 275
-
TEM and TED studies of order-induced GaInP heterostructures grown by organometallic vapour phase epitaxyKim, J. H. / Seong, T.-Y. / Chun, Y. S. / Stringfellow, G. B. / Royal Microscopical Society et al. | 1997
- 279
-
TED, TEM and AFM studies comparing atomic ordering in InAs~ySb~1~-~y layers grown by MOVPE and MBESeong, T. Y. / Booker, G. R. / Norman, A. G. / Harris, P. J. F. / Royal Microscopical Society et al. | 1997
- 283
-
Twinning of As precipitates in LT-GaAsDieker, C. / Ruvimov, S. / Sohn, H. / Washburn, J. / Royal Microscopical Society et al. | 1997
- 287
-
Features of excess arsenic precipitation in LT-GaAs delta-doped with indiumBert, N. A. / Chaldyshev, V. V. / Musikhin, Y. G. / Werner, P. / Royal Microscopical Society et al. | 1997
- 291
-
Transmission electron microscopy, x-ray diffraction and photoluminescence study of InGaAs/GaAs heterostructuresKatcki, J. / Reginski, K. / Bugajski, M. / Adamczewska, J. / Royal Microscopical Society et al. | 1997
- 295
-
Transmission electron microscopy investigation of FeAs precipitates in GaAs/AlGaAs heterostructuresKatcki, J. / Shiojiri, M. / Isshiki, T. / Nishio, K. / Royal Microscopical Society et al. | 1997
- 299
-
Characterisation of InPSb layers on different substrates (InAs or GaSb)Mendorf, C. / Brockt, G. / Behres, A. / Von Eichel-Streiber, C. / Royal Microscopical Society et al. | 1997
- 303
-
TEM and HRXRD study of high strain InAlGaAs heterolayersMusikhin, Y. G. / Bert, N. A. / Faleev, N. N. / Royal Microscopical Society et al. | 1997
- 307
-
A TEM study of Cu-In-Se thin films grown by molecular beam epitaxyLin, S. B. / Gu, G. L. / Tseng, B. H. / Royal Microscopical Society et al. | 1997
- 311
-
Structural investigations of epitaxial CdMgSe/InAs(001) heterostructuresWalter, T. / Gerthsen, D. / Litz, T. / Waag, A. / Royal Microscopical Society et al. | 1997
- 315
-
Transmission electron microscopy investigations of an epitaxial beryllium-chalcogenide-based superlatticeWalter, T. / Rosenauer, A. / Gerthsen, D. / Fischer, F. / Royal Microscopical Society et al. | 1997
- 319
-
Growth of SiC layers on off-axis 4H-SiC substratesPecz, B. / Toth, L. / Radnoczi, G. / Hallin, C. / Royal Microscopical Society et al. | 1997
- 323
-
Self-organisation and defect mechanisms in heteroepitaxial growthStrunk, H. P. / Albrecht, M. / Christiansen, S. / Dorsch, W. / Royal Microscopical Society et al. | 1997
- 335
-
Self-organisation processes in InSb quantum dots grown on InP(001) by ALMBEFerrer, J. C. / Peiro, F. / Cornet, A. / Morante, J. R. / Royal Microscopical Society et al. | 1997
- 339
-
TEM and PL studies of self-assembling quantum dotsJin-Phillipp, N. Y. / Zundel, M. K. / Phillipp, F. / Eberl, K. / Royal Microscopical Society et al. | 1997
- 343
-
Strain-induced vertical ordering effects of islands in LPCVD-grown Si~1~-~xGe~x/Si-bilayer structures on Si(001)Tillmann, K. / Rahmati, B. / Trinkaus, H. / Jaeger, W. / Royal Microscopical Society et al. | 1997
- 349
-
TEM assessment of the growth mode and strain state of capped InSb dots grown on InP (001) substratesFerrer, J. C. / Peiro, F. / Cornet, A. / Morante, J. R. / Royal Microscopical Society et al. | 1997
- 353
-
Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matricesNorman, A. G. / Mason, N. J. / Fisher, M. J. / Richardson, J. / Royal Microscopical Society et al. | 1997
- 357
-
Microstructual characterisation of CdSe quantum dots prepared by various routesNayak, R. R. / Galsworthy, J. R. / Dobson, P. J. / Hutchison, J. L. / Royal Microscopical Society et al. | 1997
- 361
-
Application of the 113 weak beam imaging technique to the investigation of strain-induced InAs islands grown on InP and GaAs(001) by MBEPonchet, A. / Lacombe, D. / Royal Microscopical Society et al. | 1997
- 365
-
Impact of the threading dislocations and residual stress on InAs islands grown on a (001) GaAs-on-Si pseudo-substrate relative to growth on standard GaAsLacombe, D. / Ponchet, A. / Gerard, J. M. / Royal Microscopical Society et al. | 1997
- 369
-
Microstructure study of GaAs quantum wire superlatticeMatsuhata, H. / Wang, X.-L. / Ogura, M. / Royal Microscopical Society et al. | 1997
- 373
-
Electron microscopy characterization of low-dimensional semiconductor structures grown on V-grooved substratesGustafsson, A. / Biasiol, G. / Dwir, B. / Reinhardt, F. / Royal Microscopical Society et al. | 1997
- 381
-
Quantitative analysis of Al~1~-~xGa~xAs heterostructures using EELSLeifer, K. / Buffat, P. A. / Royal Microscopical Society et al. | 1997
- 385
-
Orientation dependent growth of TmAs wires in GaAs grown by MBEWright, A. C. / Bennett, M. R. / Singer, K. E. / Royal Microscopical Society et al. | 1997
- 389
-
TEM and HREM structural studies of non-lithographically-produced CdS nanowiresHutchison, J. L. / Routkevitch, D. / Albu-Yaron, A. / Moskovitz, M. / Royal Microscopical Society et al. | 1997
- 393
-
TEM studies of processed Si device materialsVanhellemont, J. / Bender, H. / Van Landuyt, J. / Royal Microscopical Society et al. | 1997
- 403
-
Two- and three-dimensional characterisation of advanced LOCOS isolation using transmission electron microscopyBeanland, R. / Bazley, D. J. / Jones, S. K. / Scaife, B. / Royal Microscopical Society et al. | 1997
- 407
-
Improved epitaxial quality following etch damage removal on plasma etched silicon surfacesBonar, J. M. / Schiz, J. / Ashburn, P. / Royal Microscopical Society et al. | 1997
- 411
-
The effects of fluorine on the epitaxial regrowth of arsenic-doped amorphous silicon and polysilicon and of chlorine on the epitaxial regrowth of arsenic-doped polysiliconMarsh, C. D. / Moiseiwitsch, N. E. / Booker, G. R. / Ashburn, P. / Royal Microscopical Society et al. | 1997
- 415
-
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogenFrabboni, S. / Gambetta, F. / Tonini, R. / Balboni, R. / Royal Microscopical Society et al. | 1997
- 419
-
TEM characterisation of carbon ion implantation into epitaxial Si~1~-~xGe~xRomano-Rodriguez, A. / Perez-Rodriguez, A. / Serre, C. / Calvo-Barrio, L. / Royal Microscopical Society et al. | 1997
- 423
-
Polycrystalline silicon grain structure in VLSI devicesLindsay, R. / Chapman, J. N. / Craven, A. J. / McBain, D. / Royal Microscopical Society et al. | 1997
- 427
-
Structural and electronic properties of partially crystallised siliconBrown, P. D. / Smith, J. P. / Eccleston, W. / Humphreys, C. J. / Royal Microscopical Society et al. | 1997
- 431
-
Microstructure study of pure hydrogen RF-sputtered microcrystallized silicon thin filmsGourbilleau, F. / Achiq, A. / Vermaut, P. / Voivenel, P. / Royal Microscopical Society et al. | 1997
- 435
-
The effect of doping and formation conditions on the microstructure of porous siliconWakefield, G. / Hutchison, J. L. / Dobson, P. J. / Royal Microscopical Society et al. | 1997
- 439
-
Temperature mapping of polysilicon microheaters using Raman micro-spectroscopyBowden, M. / Gardiner, D. J. / Parr, A. A. / Carline, R. T. / Royal Microscopical Society et al. | 1997
- 443
-
Development of a mechanical polysilicon layer for surface machined microelectromechanical systems using TEM, SEM, and Raman spectroscopyKing, D. O. / Ward, M. C. / Cullis, A. G. / Gardiner, D. / Royal Microscopical Society et al. | 1997
- 447
-
Dislocation structure in interfaces of bonded hydrophobic silicon wafers: experiment and molecular dynamicsReiche, M. / Scheerschmidt, K. / Conrad, D. / Scholz, R. / Royal Microscopical Society et al. | 1997
- 451
-
Interfaces of CVD diamond films on silicon (001)Wittorf, D. / Jaeger, W. / Jia, C. L. / Urban, K. / Royal Microscopical Society et al. | 1997
- 457
-
Synchrotron x-ray reticulography: a versatile new technique for mapping misorientations in single crystalsLang, A. R. / Makepeace, A. P. W. / Royal Microscopical Society et al. | 1997
- 461
-
The use of transmitted color and interference fringes for TEM sample preparation of siliconMcCaffrey, J. P. / Royal Microscopical Society et al. | 1997
- 465
-
Cross-sectional transmission electron microscopy and focused ion beam study of advanced silicon devicesBender, H. / Roussel, P. / Royal Microscopical Society et al. | 1997
- 469
-
Preparing TEM sections by FIB: stress relief to straighten warping membranesWalker, J. F. / Royal Microscopical Society et al. | 1997
- 473
-
Surface damage of semiconductor TEM samples prepared by focused ion beamsWalker, J. F. / Broom, R. F. / Royal Microscopical Society et al. | 1997
- 479
-
Ion energy effect on surface amorphisation of semiconductor crystalsBarna, A. / Toth, L. / Pecz, B. / Radnoczi, G. / Royal Microscopical Society et al. | 1997
- 483
-
The effects of surface relaxation and ion thinning on -doped semiconductor cross-sectionsLiu, C. P. / Brown, P. D. / Boothroyd, C. B. / Humphreys, C. J. / Royal Microscopical Society et al. | 1997
- 487
-
Practical epitaxial silicide technologies for ULSI applicationsTung, R. T. / Inoue, K. / Royal Microscopical Society et al. | 1997
- 501
-
In situ TEM study of the evolution of CoSi~2 precipitates during annealing and ion irradiationPalard, M. / Ruault, M.-O. / Bernas, H. / Strobel, M. / Royal Microscopical Society et al. | 1997
- 507
-
Heteroepitaxial Si/ErSi~2/Si structures grown in high vacuumTravlos, A. / Flouda, E. / Aloupogiannis, A. / Salamouras, N. / Royal Microscopical Society et al. | 1997
- 511
-
Radiation enhanced diffusion of ion implanted Fe in Si (100) observed in ion beam synthesis of -FeSi~2Maeda, Y. / Fujita, T. / Umezawa, K. / Miyake, K. / Royal Microscopical Society et al. | 1997
- 515
-
Application of image filtering to semiconductor structuresFlaitz, P. L. / Domenicucci, A. / Royal Microscopical Society et al. | 1997
- 519
-
Tungsten and tungsten nitride Schottky contacts to 4H-SiCPecz, B. / Sulyok, A. / Radnoczi, G. / Noblanc, O. / Royal Microscopical Society et al. | 1997
- 523
-
Distribution of Fe and extended defects in Fe-implanted InPFrigeri, C. / Carnera, A. / Fraboni, B. / Gasparotto, A. / Royal Microscopical Society et al. | 1997
- 527
-
Influence of doping on the native acceptors of gallium antimonideHidalgo, P. / Mendez, B. / Piqueras, J. / Dutta, P. S. / Royal Microscopical Society et al. | 1997
- 531
-
Effect of high implantation temperatures on defect formation in 6H-SiCSuvorova, A. A. / Lebedev, O. I. / Suvorov, A. V. / Usov, I. O. / Royal Microscopical Society et al. | 1997
- 535
-
X-ray topography of single crystal zinc germanium phosphideSaker, M. K. / Keir, A. M. / Vere, A. W. / Taylor, L. L. / Royal Microscopical Society et al. | 1997
- 539
-
Mechanisms of breakdown in semi-insulating GaAs detectors under high reverse bias conditions studied by EBIC and OBICMazzer, M. / Cola, A. / Vasanelli, L. / De Vittorio, M. / Royal Microscopical Society et al. | 1997
- 543
-
The impact of structural non-uniformity on the operation of (Al~yGa~1~-~y)~xIn~1~-~xP quantum well lasers at high strainMogensen, P. C. / Hall, S. A. / Bangert, U. / Dawson, P. / Royal Microscopical Society et al. | 1997
- 547
-
EBIC and TEM investigations of laser heterostructures grown on linearly-graded and step-graded buffer layersRomero, M. J. / Pacheco, F. J. / Gonzalez, D. / Rojas, T. C. / Royal Microscopical Society et al. | 1997
- 551
-
TEM observation of degraded InGaAsP MQW laser diodesMatsuda, T. / Namegaya, T. / Kasukawa, A. / Ikegami, Y. / Royal Microscopical Society et al. | 1997
- 557
-
Atomic processes at the laser front facet during laser operationRechenberg, I. / Richter, U. / Klein, A. / Hoeppner, W. / Royal Microscopical Society et al. | 1997
- 561
-
Application of secondary electron dopant contrast imaging to InP/InGaAsP laser structuresSealy, C. P. / Castell, M. R. / Reynolds, C. L. / Wilshaw, P. R. / Royal Microscopical Society et al. | 1997
- 565
-
Degradation of electron-beam-pumped Zn~1~-~xCd~xSe/ZnSe GRINSCH blue-green lasersBonard, J.-M. / Ganiere, J.-D. / Herve, D. / Vanzetti, L. / Royal Microscopical Society et al. | 1997
- 569
-
Degradation dynamics of II-VI (ZnCdSe) quantum well materials using confocal photoluminescence microscopyFewer, D. T. / Jordan, C. / Hewlett, S. J. / McCabe, E. M. / Royal Microscopical Society et al. | 1997
- 573
-
Antiphase boundaries in GaAs/Ge solar cellsHardingham, C. / Holt, D. B. / Lazzarini, L. / Mazzer, M. / Royal Microscopical Society et al. | 1997
- 579
-
EBIC and cathodoluminescence studies of grain boundary and interface phenomena in CdTe/CdS solar cellsGalloway, S. A. / Edwards, P. R. / Durose, K. / Royal Microscopical Society et al. | 1997
- 583
-
A study of the activation of CdTe/CdS thin film solar cells using OBICEdwards, P. R. / Galloway, S. A. / Wilshaw, P. R. / Durose, K. / Royal Microscopical Society et al. | 1997
- 587
-
REBIC studies of electrical barriers in varistor ZnOHalls, D. / Holt, D. B. / Leach, C. / Russell, J. D. / Royal Microscopical Society et al. | 1997
- 593
-
Electron microscopy analysis of the RGTO technique for high sensitivity gas sensor developmentDieguez, A. / Romano-Rodriguez, A. / Morante, J. R. / Nelli, P. / Royal Microscopical Society et al. | 1997
- 597
-
Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studiesGoldfarb, I. / Owen, J. H. G. / Hayden, P. T. / Miki, K. / Royal Microscopical Society et al. | 1997
- 601
-
Measurement of silicon wafer roughness by atomic force microscopy: an interlaboratory comparisonPidduck, A. J. / Smout, A. B. J. / Wagner, P. / Suhren, M. / Royal Microscopical Society et al. | 1997
- 607
-
AFM investigations of the influence of the doping process on the structure of LPCVD-silicon filmsGold, H. / Lutz, J. / Kuchar, F. / Pippan, M. / Royal Microscopical Society et al. | 1997
- 611
-
Structural studies of InGaAsP/InP-based lasers using cross-sectional atomic-force microscopy (XAFM) and selective etchingKallstenius, T. / Smith, U. / Stoltz, B. / Royal Microscopical Society et al. | 1997
- 615
-
A k-space transport analysis of the BEEM spectroscopy of Au/Si Schottky barriersHohenester, U. / Kocevar, P. / De Andres, P. / Flores, F. / Royal Microscopical Society et al. | 1997
- 619
-
A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductorsVan Meirhaeghe, R. L. / Vanalme, G. M. / Goubert, L. / Cardon, F. / Royal Microscopical Society et al. | 1997
- 623
-
Carrier recombination at defects in silicon: the effect of transition metals and hydrogen passivationWilshaw, P. R. / Blood, A. M. / Braban, C. F. / Royal Microscopical Society et al. | 1997
- 629
-
EBIC studies of the electrical barriers in striated ZnS platelets exhibiting the anomalous photovoltaic effectHolt, D. B. / Brada, Y. / Royal Microscopical Society et al. | 1997
- 635
-
A reassessment of Te-doped GaAsFrigeri, C. / Weyher, J. L. / Jimenez, J. / Martin, P. / Royal Microscopical Society et al. | 1997
- 639
-
REBIC studies of grain boundaries in II-VI compoundsHolt, D. B. / Raza, B. / Wojcik, A. / Royal Microscopical Society et al. | 1997
- 643
-
Dependence of electron-hole generation function on EBIC contrast of defectsRomero, M. J. / Araujo, D. / Garcia, R. / Royal Microscopical Society et al. | 1997
- 647
-
Cathodoluminescence and EBIC of 2D junction laser structures on patterned (311)A GaAs substratesNorman, C. E. / North, A. J. / Burroughes, J. H. / Burke, T. / Royal Microscopical Society et al. | 1997
- 651
-
Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTeSchreiber, J. / Uniewski, H. / Hildebrandt, S. / Hoering, L. / Royal Microscopical Society et al. | 1997
- 655
-
The role of scanning cathodoluminescence in the development of MOVPE growth of GaAs/AlGaAs V-groove quantum wiresWilliams, G. M. / Steer, M. / Cullis, A. G. / Whitehouse, C. R. / Royal Microscopical Society et al. | 1997
- 661
-
Cathodoluminescence studies of striated ZnS platelets and related II-VI crystalsBrada, Y. / Holt, D. B. / Mardix, S. / Royal Microscopical Society et al. | 1997
- 665
-
Cathodoluminescence study of ZnMgSSe/GaAs heterostructuresLiu, Q. / Meinert, A. / Kubalek, E. / Kalisch, H. / Royal Microscopical Society et al. | 1997
- 669
-
Electric field dependence of the lateral cathodoluminescence intensity and electron-beam induced current distribution in a GaAs-AlAs single quantum wellJahn, U. / Menniger, J. / Kostial, H. / Hey, R. / Royal Microscopical Society et al. | 1997
- 673
-
SEM-CL of high quality polycrystalline CVD and high pressure synthetic diamondSharp, S. J. / Collins, A. T. / Royal Microscopical Society et al. | 1997
- 677
-
Recombination properties of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures: a cathodoluminescence studyFossaert, N. / Dassonneville, S. / Sieber, B. / Lorriaux, J. L. / Royal Microscopical Society et al. | 1997
- 681
-
Low temperature spectral cathodoluminescence study of InGaAs/InP quantum dot-like and quantum wire-like structuresZanotti-Fregonara, C. / Rigo, C. / Stano, A. / Salviati, G. / Royal Microscopical Society et al. | 1997
- 685
-
Advanced scanning near-field optical microscopy of semiconducting materials and devicesCramer, R. M. / Heiderhoff, R. / Selbeck, J. / Balk, L. J. / Royal Microscopical Society et al. | 1997
- 689
-
Non-destructive measurement of bulk inhomogeneities in silicon using the scanning infra-red microscopeMule'Stagno, L. / Bazzali, A. / Olmo, M. / Toeroek, P. / Royal Microscopical Society et al. | 1997
-
Micro-characterisation of Pt-silicides prepared on (100) siliconJin, S. / Bender, H. / Donaton, R. A. / Maex, K. / Royal Microscopical Society et al. | 1997