VHF Plasma Deposition of c-Si p-layer Materials (Englisch)
- Neue Suche nach: Deng, X.
- Neue Suche nach: Jones, S. J.
- Neue Suche nach: Liu, T.
- Neue Suche nach: Izu, M.
- Neue Suche nach: Materials Research Society
- Neue Suche nach: Deng, X.
- Neue Suche nach: Jones, S. J.
- Neue Suche nach: Liu, T.
- Neue Suche nach: Izu, M.
- Neue Suche nach: Wagner, S.
- Neue Suche nach: Materials Research Society
In:
Amorphous and microcrystalline silicon technology
;
795-800
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1997
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:VHF Plasma Deposition of c-Si p-layer Materials
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Beteiligte:Deng, X. ( Autor:in ) / Jones, S. J. ( Autor:in ) / Liu, T. ( Autor:in ) / Izu, M. ( Autor:in ) / Wagner, S. / Materials Research Society
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Kongress:Symposium, Amorphous and microcrystalline silicon technology ; 1997 ; San Francisco; CA
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Erschienen in:MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 467 ; 795-800
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Verlag:
- Neue Suche nach: MRS
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Erscheinungsdatum:01.01.1997
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Format / Umfang:6 pages
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Optically-Induced Conductivity Changes in Amorphous Silicon: A Historical PerspectiveStaebler, D. L. / Materials Research Society et al. | 1997
- 7
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The Light-Induced Changes in a-Si:H Materials and Solar Cells-Where We Are NowWronski, C. R. / Materials Research Society et al. | 1997
- 19
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Search for Explaining the Staebler-Wronski EffectFritzsche, H. / Materials Research Society et al. | 1997
- 31
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A Chemical Bonding Model for Photoinduced Defects in Hydrogenated Amorphous Silicon (a-Si:H): Intrinsic and Extrinsic Reaction PathwaysLucovsky, G. / Yang, H. / Materials Research Society et al. | 1997
- 37
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Microscopic Aspects of the Staebler-Wronski EffectStutzmann, M. / Materials Research Society et al. | 1997
- 49
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Improved Stability Against Light Exposure in Deuterated Amorphous Silicon Alloy Solar CellsSugiyama, S. / Yang, J. / Guha, S. / Materials Research Society et al. | 1997
- 55
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The Significance of Charged Defects in Understanding the Light-Induced Degradation of Hydrogenated Amorphous Silicon-Germanium AlloysChen, C.-C. / Zhong, F. / Cohen, J. D. / Yang, J. C. / Materials Research Society et al. | 1997
- 61
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Polarized Electroabsorption in Pulse and Continuous Light-Soaked a-Si:H - Structural Change Other Than Defect CreationHata, N. / Kamei, T. / Okamoto, H. / Matsuda, A. / Materials Research Society et al. | 1997
- 67
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Molecular-Dynamics Investigations of Boron Doping In a-Si:HFedders, P. A. / Drabold, D. A. / Materials Research Society et al. | 1997
- 73
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Persistent Photoconductivity, the Staebler-Wronski Effect, and Long-Range Disorder In a-si:HQuicker, D. / West, P. W. / Kakalios, J. / Materials Research Society et al. | 1997
- 79
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Light-Induced Metastable Defects or Light-Induced Metastable H Atoms in a-Si:H Films?Godet, C. / Materials Research Society et al. | 1997
- 85
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Change in the Spectral Shape of the Subgap Absorption in a-Si:H By Photodegradation at 4.2 K and Its Relation to the Mobility-Lifetime ProductStradins, P. / Fritzsche, H. / Materials Research Society et al. | 1997
- 91
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On the Compensation Mechanism of Amorphous Silicon Films: Study of StabilityCaputo, D. / De Cesare, G. / Palma, F. / Tucci, M. / Materials Research Society et al. | 1997
- 97
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Light-Induced Effects in a-Si:H Films Alloyed With SulfurYoon, J.-H. / Taylor, P. C. / Yan, B. / Lee, C.-H. / Materials Research Society et al. | 1997
- 103
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Electron Spin Resonance of Hydrogenated Amorphous Silicon Alloyed With SulfurYan, B. / Taylor, P. C. / Materials Research Society et al. | 1997
- 109
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Light-Soaking Effects on Photoconductivity in a-Si:H Thin FilmsMorgado, E. / Rebelo Da Silva, M. / Henriques, R. T. / Materials Research Society et al. | 1997
- 117
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Deuterium in Crystalline and Amorphous SiliconBorzi, R. / Ma, H. / Fedders, P. A. / Leopold, D. J. / Materials Research Society et al. | 1997
- 123
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Hydrogen Populations in PECVD a-Si:H, DCull, T. S. / Kernan, M. J. / Chan, P. H. / Fedders, P. A. / Materials Research Society et al. | 1997
- 129
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An Infrared and Luminescence Study of Tritiated Amorphous SiliconSidhu, L. S. / Kosteski, T. / Kherani, N. P. / Gaspari, F. / Materials Research Society et al. | 1997
- 135
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Reactivity and Migration of Hydrogen in a-Si:HBiswas, R. / Li, Q. / Pan, B. C. / Yoon, Y. / Materials Research Society et al. | 1997
- 141
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Role of Material Structure on Molecular Diffusion of Hydrogen in a-Si:C:H FilmsUllersma, E. H. C. / Inia, D. K. / Habraken, F. H. P. M. / Van Sark, W. G. J. H. M. / Materials Research Society et al. | 1997
- 147
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Determination of Hydrogen Density of States in Amorphous Silicon Using Fractional Evolution ExperimentsFranz, A. J. / Jackson, W. B. / Gland, J. L. / Materials Research Society et al. | 1997
- 153
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Growth Mechanism of Hydrogen ClustersNickel, N. H. / Anderson, G. B. / Johnson, N. M. / Walker, J. / Materials Research Society et al. | 1997
- 159
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An NMR Investigation of H Cluster Configurations in a-Si:HStephen, J. T. / Rutland, J. M. / Hah, D. / Wu, Y. / Materials Research Society et al. | 1997
- 167
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Determination of the Density of States in Semiconductors From Transient PhotoconductivityMain, C. / Materials Research Society et al. | 1997
- 179
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Spin Dependent Photoinduced Absorption in a-Si:HSchultz, N. / Vardeny, Z. V. / Taylor, P. C. / Materials Research Society et al. | 1997
- 185
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High Electric-Field Effects on the Thermal Generation in Hydrogenated Amorphous SiliconIlie, A. / Equer, B. / Materials Research Society et al. | 1997
- 191
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New Results on the Microstructure of Amorphous Silicon as Observed by Internal FrictionCrandall, R. S. / Mahan, A. H. / Iwaniczko, E. / Jones, K. M. / Materials Research Society et al. | 1997
- 197
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Identification of the Dominant Electron Deep Trap in a-Si:H: A Critical Test of the Defect Pool Versus Defect Relaxation PicturesKwon, D. / Cohen, J. D. / Materials Research Society et al. | 1997
- 203
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Influence of Defects on Excess Charge-Carrier Kinetics Studied by Transient PC and Transient PAFeist, H. / Kunst, M. / Swiatkowski, C. / Materials Research Society et al. | 1997
- 209
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The Influence of the Substrate Temperature on the Recombination Processes in a-Si:HLubianiker, Y. / Balberg, I. / Fonseca, L. / Weisz, S. Z. / Materials Research Society et al. | 1997
- 215
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Influence of Deposition Conditions on the 1/f Noise in Hydrogenated Amorphous SiliconWest, P. W. / Quicker, D. / Dyalsingh, H. M. / Kakalios, J. / Materials Research Society et al. | 1997
- 221
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Fluctuating Defect Density Probed With Noise Spectroscopy in Hydrogenated Amorphous SiliconVerleg, P. A. W. E. / Uca, O. / Dijkhuis, J. I. / Materials Research Society et al. | 1997
- 227
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Numerical Simulation of the Transient Photoconductivity in a-Si:H as a Function of the Excitation DensityFeist, H. / Kunst, M. / Materials Research Society et al. | 1997
- 233
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Self-Consistent Analysis of Mobility-Lifetime Products and Subgap Absorption on Different PECVD a-Si:H FilmsJiao, L. / Semoushikina, S. / Lee, Y. / Wronski, C. R. / Materials Research Society et al. | 1997
- 239
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Photoconductivity and Density of States in "Microstructural" Amorphous SiliconBudaguan, B. G. / Aivazov, A. A. / Radosel'sky, A. G. / Popov, A. A. / Materials Research Society et al. | 1997
- 245
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Cooling of Hot Electrons on Amorphous SiliconVanderhaghen, R. / Hulin, D. / Cuzeau, S. / White, J. O. / Materials Research Society et al. | 1997
- 251
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Space-Charge-Memory Effect in a-Si:H at Low TemperaturesHeck, S. / Stradins, P. / Fritzsche, H. / Materials Research Society et al. | 1997
- 257
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Experimental Determination of the Distribution of Tail States of Hydrogenated Amorphous Silicon: A Transient Photocurrent AnalysisWebb, D. P. / Chan, F. Y. M. / Zou, X. C. / Chan, Y. C. / Materials Research Society et al. | 1997
- 263
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Ambipolar Phototransport (~e = ~h) Observed as an Intrinsic Property of a-SiGe:HWickboldt, P. / Pang, D. / Paul, W. / Chen, J.-H. / Materials Research Society et al. | 1997
- 271
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Electronic Properties and Device Applications of Hot-Wire CVD Polycrystalline Silicon FilmsMiddya, A. R. / Guillet, J. / Brenot, R. / Perrin, J. / Materials Research Society et al. | 1997
- 283
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Electronic Properties of Microcrystalline SiliconCarius, R. / Finger, F. / Backhausen, U. / Luysberg, M. / Materials Research Society et al. | 1997
- 295
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Electroabsorption Spectra of Hydrogenated Amorphous and Microcrystalline SiliconJiang, L. / Schiff, E. A. / Finger, F. / Hapke, P. / Materials Research Society et al. | 1997
- 301
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Electronic Transport and Structure of Microcrystalline Silicon Deposited by the VHF-GD TechniqueGoerlitzer, M. / Beck, N. / Torres, P. / Kroll, U. / Materials Research Society et al. | 1997
- 307
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Injection Doping of Ultrathin Microcrystalline Silicon Films Prepared by CC-CVDKoynov, S. / Grebner, S. / Schwarz, R. / Vassilev, L. / Materials Research Society et al. | 1997
- 313
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Nanostructured Silicon Thin-Films Deposited by PECVD in the Presence of Silicon NanoparticlesViera, G. / Roca, P. / Cabarrocas, I. / Hamma, S. / Materials Research Society et al. | 1997
- 319
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Control of Enhanced Optical Absorption In c-SiKalkan, A. K. / Fonash, S. J. / Materials Research Society et al. | 1997
- 325
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Deposition and Characterization of Polycrystalline Silicon Films on Glass for Thin-Film Solar CellsBergmann, R. B. / Krinke, J. / Strunk, H. P. / Werner, J. H. / Materials Research Society et al. | 1997
- 331
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Pulsed-Laser Crystallized Highly Conductive Boron-Doped Microcrystalline SiliconNebel, C. E. / Dahlheimer, B. / Karrer, U. / Stutzmann, M. / Materials Research Society et al. | 1997
- 337
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Optical and Structural Characterization of Silicon Microstructures Fabricated by Laser Interference CrystallizationToet, D. / Aichmayr, G. / Mulato, M. / Santos, P. V. / Materials Research Society et al. | 1997
- 343
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Diffusion and Effusion of Hydrogen In Microcrystalline SiliconBeyer, W. / Hapke, P. / Zastrow, U. / Materials Research Society et al. | 1997
- 349
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Direct Nucleation of Crystalline SiGe on Substrates by Reactive Thermal CVD and Si~2H~6 and GeF~4Yoshizawa, F. / Shiota, K. / Inoue, D. / Hanna, J.-I. / Materials Research Society et al. | 1997
- 355
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Effects of Synchrotron X-rays on PVD-Deposited and Ion-Implanted -siYu, K. M. / Wang, L. / Walukiewicz, W. / Muto, S. / Materials Research Society et al. | 1997
- 361
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Transport and Recombination Channels in Undoped Microcrystalline Silicon Studied by ESR and EDMRWill, D. / Lerner, C. / Fuhs, W. / Lips, K. / Materials Research Society et al. | 1997
- 367
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Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room TemperatureGu, X. / Qin, H. / Lu, H. / Xu, J. / Materials Research Society et al. | 1997
- 373
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Electrical and Optical Properties of Nanocrystalline GaN and Noncrystalline GaN:H Thin FilmsKobayashi, S. / Nonomura, S. / Abe, K. / Gotoh, T. / Materials Research Society et al. | 1997
- 379
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Defect Luminescence in Films Containing Ge and GeO~2 NanocrystalsZacharias, M. / Atherton, S. J. / Fauchet, P. M. / Materials Research Society et al. | 1997
- 385
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Initial Growth of Microcrystalline Silicon on Atomically Flat HeterosubstrateSaitoh, K. / Kondo, M. / Matsuda, A. / Materials Research Society et al. | 1997
- 391
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Correlation Between Surface Morphology and Lattice Orientation of Microcrystalline SiliconKondo, M. / Nishimiya, T. / Saitoh, K. / Ohe, T. / Materials Research Society et al. | 1997
- 397
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Novel Plasma Control Method in PECVD for Preparing Microcrystalline SiliconNishimiya, T. / Kondo, M. / Matsuda, A. / Materials Research Society et al. | 1997
- 403
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Growth of Polycrystalline at Low Temperature on Hydrogenated Microcrystalline Silicon (c-Si:H) Seed LayerPark, W. S. / Jang, Y. H. / Takeya, M. / Jong, G. S. / Materials Research Society et al. | 1997
- 409
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Growth of Microcrystalline Si:H and (Si,Ge):H on Polyimide Substrates Using ECR Deposition TechniquesErickson, K. / Dalal, V. L. / Chumanov, G. / Materials Research Society et al. | 1997
- 415
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Dopant Activation During Solid-Phase Crystallization of Poly-Si and Influence of Fluorine and HydrogenKalkan, A. K. / Kingi, R. M. / Fonash, S. J. / Materials Research Society et al. | 1997
- 421
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Laser-Induced Melting and Crystallization of Boron Doped Amorphous SiliconNebel, C. E. / Schoeniger, S. / Dahlheimer, B. / Stutzmann, M. / Materials Research Society et al. | 1997
- 427
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Crystallization of Germanium-Carbon Alloys-Structure and Electronic TransportJohn, T.-M. / Blaesing, J. / Veit, P. / Druesedau, T. / Materials Research Society et al. | 1997
- 433
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Recrystallization of Amorphous Silicon Deposited on Ultrathin Microcrystalline Silicon LayersWang, F. / Wolfe, D. / Lucovsky, G. / Materials Research Society et al. | 1997
- 439
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A Novel Method for Fabrication of Hydrogenated Amorphous Silicon and High Quality Poly-Si Films on the Same Substrate by Employing Excimer LaserChoi, K.-Y. / Lee, J.-W. / Choi, H.-B. / Jeon, J.-H. / Materials Research Society et al. | 1997
- 445
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Application of Hot-Wire Deposited Intrinsic Polysilicon Films in n-i-p Cells and TFTsRath, J. K. / Van Zutphen, A. J. M. M. / Meiling, H. / Schropp, R. E. I. / Materials Research Society et al. | 1997
- 451
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An Absorption Study of Microcrystalline Silicon Deposited by Hot-Wire CVDDiehl, F. / Herbst, W. / Schroeder, B. / Oechsner, H. / Materials Research Society et al. | 1997
- 459
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High-Deposition-rate -Si:H Through VHF-CVD of Argon-Diluted SilaneMeiling, H. / Bezemer, J. / Schropp, R. E. I. / Van der Weg, W. F. / Materials Research Society et al. | 1997
- 471
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Versatile High Rate Plasma Deposition and Processing With Very High Frequency ExcitationHeintze, M. / Materials Research Society et al. | 1997
- 483
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High Rate Deposition of a-SiN~x:H by VHF PECVDTakagi, T. / Nakagawa, Y. / Watabe, Y. / Takechi, K. / Materials Research Society et al. | 1997
- 489
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Photoluminescence and Optical Characterization of a-Si~xN~1~-~x:H-Based Multilayers Grown by PECVDGiorgis, F. / Giuliani, F. / Pirri, C. F. / Tresso, E. / Materials Research Society et al. | 1997
- 495
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Intentional Reconstruction of Silicon Network on the Surface and Within Subsurface By H and ArFutako, W. / Fukutani, K. / Shimizu, I. / Materials Research Society et al. | 1997
- 501
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Real-Time Kinetic Analysis of Hydrogen Abstraction and Etching Reactions Using Pulsed-Gas PECVD of Amorphous and Microcrystalline SiliconSrinivasan, E. / Parsons, G. N. / Materials Research Society et al. | 1997
- 507
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Real-Time ESR Observation During Film Growth of a-Si:HYamasaki, S. / Umeda, T. / Isoya, J. / Tanaka, K. / Materials Research Society et al. | 1997
- 519
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Structure and Electronic Parameters of a-Si:H Deposited by dc-MASDGolikova, O. A. / Kuznetsov, A. N. / Kudoyarova, V. K. / Kazanin, M. M. / Materials Research Society et al. | 1997
- 525
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Study of Microvoids in High-Rate a-Si:H Using Positron AnnihilationZou, X. / Webb, D. P. / Lin, S. H. / Lam, Y. W. / Materials Research Society et al. | 1997
- 531
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Characterization of Manolayer-Level Composition and Optical Gap Profiles in Amorphous Silicon-Carbon Alloy Bandgap-Modulated StructuresFujiwara, H. / Koh, J. / Wronski, C. R. / Collins, R. W. / Materials Research Society et al. | 1997
- 537
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Structural Properties of a-Ge~1~-~xC~x :H Alloys Prepared by the rf Sputtering TechniqueMarques, F. C. / Vilcarromero, J. / Freire, F. L. / Materials Research Society et al. | 1997
- 543
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Preparation and Properties of Hydrogenated Amorphous Germanium Nitride a-GeN~x:HHioki, M. / Nitta, S. / Takeda, Y. / Yamamoto, K. / Materials Research Society et al. | 1997
- 549
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Investigations of Ultra-Thin Single Layer a-Si:H FilmsKoehler, S. A. / Materials Research Society et al. | 1997
- 555
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Structural Relaxation of Vacancies in Amorphous SiliconKim, E. / Lee, Y. H. / Chen, C. / Pang, T. / Materials Research Society et al. | 1997
- 561
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An AFM Study of the Effect of Growth Method and Conditions on the Microstructure of a-Si:HKwon, D. / Cohen, J. D. / Garcia, R. / Materials Research Society et al. | 1997
- 567
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In-situ Monitoring of Surface Hydrogen on the a-SiGe:H FilmsToyoshima, Y. / Ganguly, G. / Ikeda, T. / Saitoh, K. / Materials Research Society et al. | 1997
- 573
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Defect Formation Mechanism During PECVD of a-Si:HMaeda, K. / Umezu, I. / Materials Research Society et al. | 1997
- 579
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High-Rate PECVD of Low Defect Density a-Si:H on Large AreasRoehlecke, S. / Steinke, O. / Schade, K. / Stahr, F. / Materials Research Society et al. | 1997
- 585
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High-Rate Deposition of a-Si:H Films in 55 kHz Glow Discharge: Growth Mechanisms and Film StructureBudaguan, B. G. / Aivazov, A. A. / Sazonov, A. Y. / Popov, A. A. / Materials Research Society et al. | 1997
- 591
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Deposition Conditions for Large-Area PECVD of Amorphous SiliconKuske, J. / Stephan, U. / Nowak, W. / Roehlecke, S. / Materials Research Society et al. | 1997
- 597
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Ion Bombardment and Disorder in Amorphous SiliconSidhu, L. S. / Gaspari, F. / Zukotynski, S. / Materials Research Society et al. | 1997
- 603
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Ion Bombardment in Silane VHF Deposition PlasmasHamers, E. A. G. / Bezemer, J. / Meilign, H. / Van Sark, W. G. J. H. M. / Materials Research Society et al. | 1997
- 609
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Role of the Gas Flow Parameters on the Uniformity of Films Produced by PECVD TechniqueMartins, R. / Macarico, A. / Ferreira, I. / Fortunato, E. / Materials Research Society et al. | 1997
- 615
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a-Si:H and a-SiGe:H Alloys Fabricated Close to Powder Regime of rf PECVDMiddya, A. R. / Hazra, S. / Ray, S. / Longeaud, C. / Materials Research Society et al. | 1997
- 621
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Hydrogen Incorporation During Deposition of a-Si:H From an Intense Source of SiH~3Van De Sanden, M. C. M. / Severens, R. J. / Kessels, W. M. M. / Van De Pas, F. / Materials Research Society et al. | 1997
- 627
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Amorphous Silicon-Carbon Alloys and Amorphous Carbon From Direct Methane and Ethylene Activation by ECRConde, J. P. / Chu, V. / Giorgis, F. / Pirri, C. F. / Materials Research Society et al. | 1997
- 633
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Single Wafer Amorphous Silicon Process EvaluationO'Meara, D. / Chang, C. L. / Blumenthal, R. / Hegde, R. I. / Materials Research Society et al. | 1997
- 639
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Bombardment by Reflection-A Novel Method to Prepare High Quality Hydrogenated Amorphous Germanium by Anodic PCVDDiez, A. / Druesedau, T. P. / Materials Research Society et al. | 1997
- 645
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Deposition of Device-Quality Amorphous Silicon by Hot-Wire CVDFeenstra, K. F. / Van der Werf, C. H. M. / Molenbroek, E. C. / Schropp, R. E. I. / Materials Research Society et al. | 1997
- 651
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Fast Etching of Amorphous and Microcrystalline Silicon by Hot-Filament Generated Atomic HydrogenWanka, H. N. / Schubert, M. B. / Materials Research Society et al. | 1997
- 657
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Observation of Improved Structural Ordering In Low H Content, Hot-Wire Deposited a-Si:HMahan, A. H. / Williamson, D. L. / Furtak, T. E. / Materials Research Society et al. | 1997
- 663
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ESR Studies on Hot-Wire Amorphous SiliconUnold, T. / Mahan, A. H. / Materials Research Society et al. | 1997
- 671
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Modeling of a-Si:H Alloys Solar Cells on Textured SubstratesZeman, M. / Van den Berg, J. H. / Vosteen, L. L. A. / Willemen, J. A. / Materials Research Society et al. | 1997
- 681
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Microcrystalline Silicon Germanium: An Attractive Bottom-Cell Material for Thin-Film Silicon-Based Tandem-Solar-CellsGanguly, G. / Ikeda, T. / Kajiwara, K. / Matsuda, A. / Materials Research Society et al. | 1997
- 693
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An Amorphous Silicon Alloy Triple-Junction Solar Cell With 14.6% Initial and 13.0% Stable EfficienciesYang, J. / Banerjee, A. / Guha, S. / Materials Research Society et al. | 1997
- 699
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The Problem of the Top Cell for the Micromorph TandemPlatz, R. / Meier, J. / Fischer, D. / Dubail, S. / Materials Research Society et al. | 1997
- 705
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Structural and Optical Properties of a-Si:H /c-Si:H:B Junctions in the a-Si:H-Based n-i-p Solar Cell ConfigurationKoh, J. / Fujiwara, H. / Wronski, C. R. / Collins, R. W. / Materials Research Society et al. | 1997
- 711
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Improved Amorphous Silicon Alloy Solar Cells for Module FabricationBanerjee, A. / Yang, J. / Guha, S. / Materials Research Society et al. | 1997
- 717
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Space-Charge-Limited Currents in n-I-n Devices Incorporating Glow-Discharge and Hot-Wire Deposited a-Si:HMolenbroek, E. C. / Van Der Werf, C. H. M. / Feenstra, K. F. / Rubinelli, F. / Materials Research Society et al. | 1997
- 723
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Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)Nurdjaja, I. / Schiff, E. A. / Materials Research Society et al. | 1997
- 729
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Internal Electric-Field Profile in Thin-Film Hydrogenated Amorphous Silicon Diodes Studied by the Transient-Null-Current MethodHan, D. / Yeh, C. / Wang, K. / Wang, Q. / Materials Research Society et al. | 1997
- 735
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More Insights Into Bandgap Graded a-SiGe:H Solar Cells by Experimental and Simulated DataZimmer, J. / Stiebig, H. / Foelsch, J. / Finger, F. / Materials Research Society et al. | 1997
- 741
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Al/Zno/a-SiGe:H: A System Protected by the ZnO Buffer From Metal-Induced CrystallizationEdelman, F. / Brener, R. / Cytermann, C. / Weil, R. / Materials Research Society et al. | 1997
- 747
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Impact of Hydrogen Dilution on the Properties and Light-Induced Changes of a-Si:H Based Materials and Solar CellsLee, Y. / Jiao, L. / Koh, J. / Fujiwara, H. / Materials Research Society et al. | 1997
- 753
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The Effects of Hydrogen Dilution on Voc in a-Si:H pin Solar CellsWang, Q. / Crandall, R. S. / Han, D. / Materials Research Society et al. | 1997
- 759
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Conditions for Collection Efficiencies Greater Than100%Bruegemann, R. / Zollondz, J. H. / Main, C. / Gao, W. / Materials Research Society et al. | 1997
- 765
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Bidimensional Numerical Analysis of a c-Si:H p-i-n Photodiode Under Local IlluminationFantoni, A. / Viera, M. / Martins, R. / Materials Research Society et al. | 1997
- 771
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Computer Analysis of a-Si:H Based Double Junction Solar CellsPalit, N. / Chatterjee, P. / Materials Research Society et al. | 1997
- 777
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Optical Losses In Amorphous Silicon Solar Cells Due to Back ReflectorsSopori, B. L. / Madjdpour, J. / Van Roedern, B. / Chen, W. / Materials Research Society et al. | 1997
- 783
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Energy Dependence of Defects in a-Si:H Solar Cells During Degradation and Annealing ProcessesCaputo, D. / Lemmi, F. / Palma, F. / Materials Research Society et al. | 1997
- 789
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Solar Cells From Mixed SiCl~2H~2 and SiH~4 PlasmasPayne, A. M. / Crone, B. K. / Wagner, S. / Materials Research Society et al. | 1997
- 795
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VHF Plasma Deposition of c-Si p-layer MaterialsDeng, X. / Jones, S. J. / Liu, T. / Izu, M. / Materials Research Society et al. | 1997
- 801
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Photogeneration and Carrier Transport in Amorphous Silicon/Crystalline Silicon DevicesJagannathan, B. / Anderson, W. A. / Materials Research Society et al. | 1997
- 807
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Influence of Front Contact Material on Silicon Heterojunction Solar Cell PerformanceRizzoli, R. / Galloni, R. / Summonte, C. / Pinghini, R. / Materials Research Society et al. | 1997
- 813
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Stability of Single- and Tandem Junction a-Si:H Solar Cells Grown Using the ECR ProcessDalai, V. L. / Maxon, T. / Girvan, R. / Haroon, S. / Materials Research Society et al. | 1997
- 821
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Amorphous-Silicon Thin-Film Transistors Matched to Ultralarge PanelsMatsumura, M. / Saitoh, A. / Materials Research Society et al. | 1997
- 831
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Modeling and Scaling of a-Si:H and Poly-Si Thin-Film TransistorsShur, M. S. / Slade, H. C. / Ytterdal, T. / Wang, L. / Materials Research Society et al. | 1997
- 843
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Prospects for Active Matrix Displays on PlasticGates, S. M. / Materials Research Society et al. | 1997
- 851
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Spin-Dependent Transport in Si Thin-Film TransistorsKawachi, G. / Graeff, C. F. O. / Brandt, M. S. / Stutzmann, M. / Materials Research Society et al. | 1997
- 863
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Amorphous Silicon Photodiode-Thin-Film Transistor Image Sensor With Diode on Top StructurePowell, M. J. / Glasse, C. / French, I. D. / Franklin, A. R. / Materials Research Society et al. | 1997
- 869
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Via-Hole Addressed TFT and Process for Large-Area a-Si:H ElectronicsGleskova, H. / Wagner, S. / Shen, D. S. / Materials Research Society et al. | 1997
- 875
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The Effect of the Amorphous Silicon Alpha-Gamma Transition on Thin-Film Transistor PerformanceFrench, I. D. / Deane, S. C. / Murley, D. T. / Hewett, J. / Materials Research Society et al. | 1997
- 881
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Characterization and Modeling of Frequency Dispersion in Amorphous Silicon Thin-Film TransistorsSlade, H. C. / Shur, M. S. / Ytterdal, T. / Materials Research Society et al. | 1997
- 887
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Stability of Amorphous Silicon Thin-Film Transistors for Analogue Circuit ApplicationsHornsey, R. I. / Mahnke, T. / Madeira, P. / Aflatooni, K. / Materials Research Society et al. | 1997
- 893
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Near-Intrinsic Microcrystalline Silicon for Use in Thin-Film TransistorsFroggatt, M. W. D. / Milne, W. I. / Powell, M. J. / Materials Research Society et al. | 1997
- 899
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The Impact of Field Plate Resistivity on the Performance of a Novel High Voltage Thin-Film Transistor Incorporating a Semi-Insulating LayerChen, Y. / Clough, F. J. / Sankara Narayanan, E. M. / Xu, Y. Z. / Materials Research Society et al. | 1997
- 905
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Amorphous Silicon Thin-Film Transistors With a Hot-Wire Active-Layer Deposited at High Growth RateChu, V. / Jarego, J. / Silva, H. / Silva, T. / Materials Research Society et al. | 1997
- 913
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Amorphous Silicon Photodiodes for Replacing Degenerated Photoreceptors In the Human EyeSchubert, M. B. / Hierzenberger, A. / Baumung, V. / Wanka, H. N. / Materials Research Society et al. | 1997
- 919
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Charge Collection In a Se Photoconductor on a Thin-Film Transistor Array During X-ray ImagingBrauers, A. / Conrads, N. / Frings, G. / Schiebel, U. / Materials Research Society et al. | 1997
- 925
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Time Dependence of the Reverse Current in Amorphous Silicon Schottky DiodesAflatooni, K. / Hornsey, R. / Nathan, A. / Materials Research Society et al. | 1997
- 931
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Improved Concept for nipiin and piiin Color Sensitive Two-Terminal Devices With High LinearityKnipp, D. / Stiebig, H. / Foelsch, J. / Carius, R. / Materials Research Society et al. | 1997
- 937
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Amorphous/Crystalline Silicon Two-Terminal Visible/Infrared Tunable Photodetector: Modeling and RealizationDe Cesare, G. / Irrera, F. / Tucci, M. / Materials Research Society et al. | 1997
- 943
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Evidence of Hysteresis In a New p-i-n-i-p-i-n Amorphous Silicon DeviceCaputo, D. / De Cesare, G. / Palma, F. / Materials Research Society et al. | 1997
- 949
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High Sensitivity Photochemical Sensors Based on Amorphous SiliconFortunato, E. / Malik, A. / Seco, A. / Macarico, A. / Materials Research Society et al. | 1997
- 955
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Rugged Thin-Film Diode Liquid Crystal Switches Based on Amorphous SiN~x:HMcgarvey, B. / Clegg, J. B. / Deane, S. C. / Sandoe, J. N. / Materials Research Society et al. | 1997
- 961
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Hydrogenated Amorphous Silicon Photoresists for HgCdTe PatterningHollingsworth, R. E. / Dehart, C. / Wang, L. / Dinan, J. H. / Materials Research Society et al. | 1997