Reduction of Charging Damage of Gate Oxide by Time Modulation Bias and Method (Englisch)
- Neue Suche nach: Ono, T.
- Neue Suche nach: Omoto, Y.
- Neue Suche nach: Mizutani, T.
- Neue Suche nach: Yoshioka, K.
- Neue Suche nach: IEEE; Electron Devices Society
- Neue Suche nach: American Vacuum Society
- Neue Suche nach: Japanese Society of Applied Physics
- Neue Suche nach: Ono, T.
- Neue Suche nach: Omoto, Y.
- Neue Suche nach: Mizutani, T.
- Neue Suche nach: Yoshioka, K.
- Neue Suche nach: Dao, T.
- Neue Suche nach: Koyanagi, M.
- Neue Suche nach: Hook, T.
- Neue Suche nach: IEEE; Electron Devices Society
- Neue Suche nach: American Vacuum Society
- Neue Suche nach: Japanese Society of Applied Physics
In:
Plasma process-induced damage
;
167-170
;
1999
-
ISBN:
- Aufsatz (Konferenz) / Print
-
Titel:Reduction of Charging Damage of Gate Oxide by Time Modulation Bias and Method
-
Beteiligte:Ono, T. ( Autor:in ) / Omoto, Y. ( Autor:in ) / Mizutani, T. ( Autor:in ) / Yoshioka, K. ( Autor:in ) / Dao, T. / Koyanagi, M. / Hook, T. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics
-
Kongress:International symposium; 4th, Plasma process-induced damage ; 1999 ; Monterey; CA
-
Erschienen in:Plasma process-induced damage ; 167-170
-
Verlag:
- Neue Suche nach: American Vacuum Society
-
Erscheinungsdatum:01.01.1999
-
Format / Umfang:4 pages
-
Anmerkungen:Also known as 4th P2ID. IEEE cat no 99TH8395
-
ISBN:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Shift of Paradigms in MicroelectronicsWieder, A. W. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 3
-
Minimizing Charge-Up Damage During Dielectric Etchers' Hardware and Process Development Stages (invited)Shan, H. / Bjorkman, C. / Lindley, R. / Collins, K. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 8
-
Impact of Reactor- and Transistor-type on Electron ShadingCreusen, M. / Ackaert, J. / De Backer, E. / Groeseneken, G. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 12
-
Study of the Influence of Process Parameters on Gate Oxide Degradation During Contact Etching in MERIE and HDP ReactorsPoiroux, T. / Pascal, F. / Heitzmann, M. / Berruyer, P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 16
-
Plasma Charging and Layout Effects (invited)Simon, P. / Luchies, J. / Maly, W. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 21
-
On the Dependence of Plasma-Induced Damage on Antenna AreaHwang, G. S. / Giapis, K. P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 25
-
Effect of Plasma Density and Uniformity, Electron Temperature, Process Gas, and Chamber on Electron Shading DamageSiu, S. / Patrick, R. / Vahedi, V. / Alba, S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 29
-
Evaluation and Reduction of Electron Shading Damage in High Temperature EtchingNojiri, K. / Kato, K. / Kawakami, H. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 33
-
The Sensitivity of Electron Shading Damage to Electron Temperature, Electron Density, and Plasma-to-Wafer Electron Energy ThresholdYamartino, J. / Loewenhardt, P. K. / Huang, K. / Chen, H. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 37
-
Pulse-Time-Modulated Plasma Etching for High Performance Polysilicon Patterning on Thin Gate OxidesOhtake, H. / Samukawa, S. / Noguchi, K. / Iida, H. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 41
-
Compounding Effects of UV Exposure, Ion Bombardment, Electron Shading, and Plasma Charging in a High Density Plasma Poly EtcherLin, S.-S. / Tsui, B.-Y. / Tsai, C.-S. / Hsia, C. C. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 45
-
Plasma Process-Induced Degradation of Thin Inter-Polysilicon Dielectric LayersHurley, P. / Sheehan, E. / Mathewson, A. / Rodrigues, R. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 49
-
Evaluation of Rapid Thermal Nitrided ONO Interpoly Dielectric Resistance to Plasma Process-Induced DamageCha, C.-L. / Chor, E. F. / Gong, H. / Zhang, A. Q. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 53
-
Plasma Induced Damage from HDP Process on the Ultra-Thin Gate OxideChen, S. / Perera, C. / Wen, J. / Sudijono, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 57
-
Effect of the Pattern Structures on the Charging Damage During Metal EtchingHasegawa, A. / Aoyama, M. / Ishida, T. / Nakamura, M. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 61
-
Annealing of Plasma Charging Damage and Residual Degradation in MOS TransistorsBrozek, T. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 65
-
Application of the Deuterium Sintering Process to Improve the Device Design Rule in Reducing Plasma Induced DamageKim, Y.-K. / Lee, S.-H. / Lee, H.-S. / Kim, B.-S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 69
-
A Study of Plasma-Induced Damage on Hot-Carrier Lifetime Using Pre-Stressed DataBhuva, B. / Mongkolkachit, P. / Bui, N. / Kerns, S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 73
-
Plasma Damage Impact on NMOS Electrical Characteristics During a CCS StressPantisano, L. / Paccagnella, A. / Colombo, P. / Valentini, M. G. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 77
-
Plasma Damage Evaluation Using Matched Transistors and Determination of Damage Prevention OptionsEllis, J. / Comeau, A. R. / Porter, R. / Bossingham, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 80
-
Evaluation of Charging Damage Caused by the Pattern Structures During A1 EtchingTamitani, N. / Kogure, R. / Takaoka, Y. / Moriyama, I. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 84
-
Plasma Damage During Dielectric Etch in High Density Plasma EtcherTsui, B.-Y. / Lin, S.-S. / Tsai, C.-S. / Hsia, C. C. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 88
-
The Prevention of Charge Damage on Thin Gate Oxide from High Density Plasma DepositionShih, H. H. / Tsai, C. Y. / Yang, G. S. / Chen, K. C. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 92
-
Charge-Up Damage of Dual Gate Transistor During RF Pre-Cleaning of Metal Contact Before Barrier Metal DepositionPark, W.-J. / Shin, K.-S. / Kim, J.-S. / Kang, C.-J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 96
-
Effects of Processing Pressure on Device Damage in RF Biased ECR CVDLassig, S. / Vahedi, V. / Benjamin, N. / Mulgrew, P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 100
-
Reduction and Nonuniformity of High Density Plasma Process-Induced Electrical Degradation in MOS DevicesTzeng, P.-Z. / Li, J.-C. / Yeh, C.-C. / Chang-Liao, K.-S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 104
-
Comparison of CHARM-2 and Surface Potential Measurement to Monitor Plasma Induced Gate Oxide DamageLee, M.-Y. / Hu, J. / Catabay, W. / Schoenborn, P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 108
-
A Method for Reducing Notching and Electron Shading Damage in Continuous Wave ECR Metal EtcherTabara, S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 112
-
Evaluation of Charging Damage in a Plasma Doping SystemGoeckner, M. / Felch, S. B. / Fang, Z. / Weeman, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 116
-
Process-Induced Damage by a Low Energy Neutral Beam SourceTang, X. / Wang, Q. / Manos, D. M. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 120
-
Plasma Damage Characterization of the Lam TCP 9600PTX High-Density, Inductively Coupled Metal Etcher and Microwave AsherPatrick, R. / Siu, S. / Baldwin, S. / Werking, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 124
-
Characterization of Ion Implanter Electron Flood Guns Using Charge Pumping and Threshold Voltage MeasurementsSawyer, W. / Mason, P. W. / Santiesteban, R. S. / Perrson, E. J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 128
-
Hardware and Process Dependence of Electron Shading Damage in a High Density Plasma Oxide Etch ToolWerking, J. / Bosch, W. / McCormack, D. W. / Flanner, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 132
-
Detection of Magnetically Induced Plasma Charging from Passivation Level Processing Using Corona-Oxide-Semiconductor TechniquesLobbins, J. / Nelson, L. M. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 136
-
Ultra-Thin Oxynitride Gate Dielectrics for 0.18 m CMOS and Beyond (invited)Takayanagi, M. / Toyoshima, Y. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 137
-
Relationship Between Plasma Damage, SILC and Gate-Oxide ReliabilityCheung, K. P. / Lu, Q. / Ciampa, N. A. / Liu, C. T. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 141
-
Plasma-Induced Charging Damage in Ultrathin (3 nm) Nitrided OxidesChen, C.-C. / Lin, H.-C. / Chang, C.-Y. / Liang, M.-S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 145
-
Control of Performance Degradation Induced by Contact Etching for a Ferroelectric Capacitor Using a Pulsed-Power Inductively Coupled PlasmaKwon, O. S. / Choi, C. J. / Park, C. / Seol, Y. S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 149
-
Plasma Diagnosis and Its Relation to Damage (invited)Malyshev, M. V. / Donnelly, V. / Colonell, J. / Samukawa, S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 155
-
Suppression of Topography Dependent Charging Using a Phase-Controlled Inductively Coupled PlasmaShin, K.-S. / Park, W.-J. / Kim, J.-S. / Kang, C.-J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 159
-
Effect of Wafer Bias Frequency on Microtrenching During High Selective Gate EtchingMorioka, H. / Hasegawa, A. / Ishida, T. / Abe, N. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 163
-
Evaluation and Reduction of Charging Damage During Metal EtchingOmoto, Y. / Ono, T. / Watanabe, S. / Yoshioka, K. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 167
-
Reduction of Charging Damage of Gate Oxide by Time Modulation Bias and MethodOno, T. / Omoto, Y. / Mizutani, T. / Yoshioka, K. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 171
-
Damascene Copper Integration (invited)Stamper, A. K. / Heidenreich, J. / Hubanks, D. / Luce, S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 177
-
Comparison Between Gate Oxide Degradation Induced by Copper Dual Damascene and Conventional Aluminum ProcessesPoiroux, T. / Heitzmann, M. / Morand, Y. / Berruyer, P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 181
-
Process-Induced Damage in a Dual-Oxide (3.5/6.8 nm) 0.18-m Copper CMOS TechnologyHook, T. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 184
-
Charging Protection and Degradation by Antenna Environment on NMOS and PMOS TransistorsCarrere, J.-P. / Heslinga, D. R. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 188
-
Effect of Low Temperature Deuterium Annealing on Plasma-Process Induced DamageLee, S. H. / Kim, Y. K. / Lee, Y. H. / Kang, H. S. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 192
-
Plasma Vacuum Ultraviolet Emission in a High Density EtcherCismaru, C. / Shohet, J. L. / McVittie, J. P. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 196
-
Alternative Interpretation of Plasma Processing Damage Data to Facilitate Comparisons Between Oxide EtchersMaynard, H. / Colonell, J. / Werking, J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 200
-
Device Effects and Charging Damage: Correlations Between SPIDER-MEM and CHARM-2Lukaszek, W. / Rendon, M. J. / Dyer, D. E. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 204
-
Dependence of Plasma Damage on Density and T~e in a Decoupled Plasma Source Metal EtcherDowney, S. W. / Malyshev, M. V. / Donnelly, V. M. / Colonell, J. I. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- 208
-
Fast Hot-Carrier Aging Method of Charging Damage MeasurementCheung, K. P. / Lloyd, E. J. / IEEE; Electron Devices Society / American Vacuum Society / Japanese Society of Applied Physics et al. | 1999
- i
-
1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395)| 1999