Use of Non-Contact Resistivity Measurements for Epitaxy: Surface Charge Profiler Method (Englisch)
- Neue Suche nach: Danel, A.
- Neue Suche nach: Tardif, F.
- Neue Suche nach: Kamarinos, G.
- Neue Suche nach: Nguyen, M. C.
- Neue Suche nach: Electrochemical Society
- Neue Suche nach: Danel, A.
- Neue Suche nach: Tardif, F.
- Neue Suche nach: Kamarinos, G.
- Neue Suche nach: Nguyen, M. C.
- Neue Suche nach: Claeys, C. L.
- Neue Suche nach: Electrochemical Society
In:
High Purity Silicon
;
444-455
;
1998
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:Use of Non-Contact Resistivity Measurements for Epitaxy: Surface Charge Profiler Method
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Beteiligte:Danel, A. ( Autor:in ) / Tardif, F. ( Autor:in ) / Kamarinos, G. ( Autor:in ) / Nguyen, M. C. ( Autor:in ) / Claeys, C. L. / Electrochemical Society
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Kongress:International symposium; 5th, High Purity Silicon ; 1998 ; Boston, MA
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Erschienen in:High Purity Silicon ; 444-455PROCEEDINGS-ELECTROCHEMICAL SOCIETY PV ; 13 ; 444-455
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Verlag:
- Neue Suche nach: Electrochemical Society
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Erscheinungsort:Pennington, NJ
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Erscheinungsdatum:01.01.1998
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Format / Umfang:12 pages
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Anmerkungen:Held at the 194th Meeting of the Electrochemical Society
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Selective Nucleation Mechanism of Trace Metal Contaminants at Surface Defects of Silicon Wafers in Acqueous Fluoride SolutionHomma, T. / Chidsey, C. E. D. / Watanabe, M. / Nagai, K. / Electrochemical Society et al. | 1998
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