Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy (Englisch)
- Neue Suche nach: Witte, H.
- Neue Suche nach: Krtschil, A.
- Neue Suche nach: Lisker, M.
- Neue Suche nach: Rudloff, D.
- Neue Suche nach: Christen, J.
- Neue Suche nach: Krost, A.
- Neue Suche nach: Stutzmann, M.
- Neue Suche nach: Scholz, F.
- Neue Suche nach: Materials Research Society
- Neue Suche nach: Witte, H.
- Neue Suche nach: Krtschil, A.
- Neue Suche nach: Lisker, M.
- Neue Suche nach: Rudloff, D.
- Neue Suche nach: Christen, J.
- Neue Suche nach: Krost, A.
- Neue Suche nach: Stutzmann, M.
- Neue Suche nach: Scholz, F.
- Neue Suche nach: Myers, T. H.
- Neue Suche nach: Materials Research Society
In:
GaN and related alloys
;
W11.82.1-W11.83.0
;
2000
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ISBN:
-
ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
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Beteiligte:Witte, H. ( Autor:in ) / Krtschil, A. ( Autor:in ) / Lisker, M. ( Autor:in ) / Rudloff, D. ( Autor:in ) / Christen, J. ( Autor:in ) / Krost, A. ( Autor:in ) / Stutzmann, M. ( Autor:in ) / Scholz, F. ( Autor:in ) / Myers, T. H. / Materials Research Society
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Kongress:Symposium, GaN and related alloys ; 1999 ; Boston, MA
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Erschienen in:GaN and related alloys ; W11.82.1-W11.83.0MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 595 ; W11.82.1-W11.83.0
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Verlag:
- Neue Suche nach: Materials Research Society
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Erscheinungsort:Warrendale, Pa.
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Erscheinungsdatum:01.01.2000
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Format / Umfang:W11.82.1-W11.83.0
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Anmerkungen:Includes bibliographical references and index
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on SapphireHansen, M. / Fini, P. / Zhao, L. / Abare, A. / Coldren, L. A. / Speck, J. S. / DenBaars, S. P. / Materials Research Society et al. | 2000
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Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser DiodesHansen, M. / Abare, A. C. / Kozodoy, P. / Katona, T. M. / Craven, M. D. / Speck, J. S. / Mishra, U. K. / Coldren, L. A. / DenBaars, S. P. / Materials Research Society et al. | 2000
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Spatially Resolved Electroluminescence of InGaN-MQW-LEDsSchwegler, V. / Seyboth, M. / Kirchner, C. / Scherer, M. / Kamp, M. / Fischer, P. / Christen, J. / Zacharias, M. / Materials Research Society et al. | 2000
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High-Quality Al~xGa~1~-~xN Using Low Temperature-Interlayer and its Application to UV DetectorIwaya, M. / Terao, S. / Hayashi, N. / Kashima, T. / Detchprohm, T. / Amano, H. / Akasaki, I. / Hirano, A. / Pernot, C. / Materials Research Society et al. | 2000
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Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) SubstratesDavis, R. F. / Gehrke, T. / Linthicum, K. J. / Zheleva, T. S. / Rajagopal, P. / Zorman, C. A. / Mehregany, M. / Materials Research Society et al. | 2000
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Advanced PENDEOEPITAXY™ of GaN and Al~xGa~1~-~xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor DepositionGehrke, T. / Linthicum, K. J. / Rajagopal, P. / Preble, E. A. / Davis, R. F. / Materials Research Society et al. | 2000
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Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase EpitaxyKuan, T. S. / Inoki, C. K. / Hsu, Y. / Harris, D. L. / Zhang, R. / Gu, S. / Kuech, T. F. / Materials Research Society et al. | 2000
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GaN and AIN Layers Grown by Nano Epitaxial Lateral Overgrowth Technique on Porous SubstratesMynbaeva, M. / Titkov, A. / Kryzhanovski, A. / Zubrilov, A. / Ratnikov, V. / Davydov, V. / Kuznetsov, N. / Mynbaev, K. / Stepanov, S. / Cherenkov, A. et al. | 2000
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Dislocation Arrangement in a Thick LEO GaN Film on SapphireDunn, K. A. / Babcock, S. E. / Stone, D. S. / Matyi, R. J. / Zhang, L. / Kuech, T. F. / Materials Research Society et al. | 2000
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Polarity Determination for MOCVD Growth of GaN on Si(111) by convergent Beam Electron DiffractionZhao, L. / Marchand, H. / Fini, P. / DenBaars, S. P. / Mishra, U. K. / Speck, J. S. / Materials Research Society et al. | 2000
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Structural Properties of Laterally Overgrown GaNZhang, R. / Shi, Y. / Zhou, Y. G. / Shen, B. / Zheng, Y. D. / Kuan, T. S. / Gu, S. L. / Zhang, L. / Hansen, D. M. / Kuech, T. F. et al. | 2000
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HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire SubstratesParillaud, O. / Wagner, V. / Buhlmann, H.-J. / Lelarge, F. / Ilegems, M. / Materials Research Society et al. | 2000
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Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown `Templates'Paskova, T. / Tungasmita, S. / Valcheva, E. / Svedberg, E. B. / Arnaudov, B. / Evtimova, S. / Persson, P. A. / Henry, A. / Beccard, R. / Heuken, M. et al. | 2000
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Visible and Infrared Emission of GaN:Er Thin Films Grown by SputteringChen, H. / Gurumurugan, K. / Kordesch, M. E. / Jadwisienczak, W. M. / Lozykowski, H. J. / Materials Research Society et al. | 2000
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Growth and Characterization of GaN Thin Films on Si(111) Substrates Using SiC Intermediate LayerLim, K. Y. / Lee, K. J. / Park, C. I. / Kim, K. C. / Choi, S. C. / Lee, W.-H. / Suh, E.-K. / Yang, G. M. / Nahm, K. S. / Materials Research Society et al. | 2000
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Surface Morphology of GaN: Flat Versus Vicinal SurfacesXie, M. H. / Seutter, S. M. / Zheng, L. X. / Cheung, S. H. / Ng, Y. F. / Wu, H. / Tong, S. Y. / Materials Research Society et al. | 2000
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Evidence from EELS of Oxygen in the Nucleation Layer of an MBE Grown III-N HEMTEustis, T. J. / Silcox, J. / Murphy, M. J. / Schaff, W. J. / Materials Research Society et al. | 2000
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Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma SourcesPtak, A. J. / Ziemer, K. S. / Holbert, L. J. / Stinespring, C. D. / Myers, T. H. / Materials Research Society et al. | 2000
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MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And SiMula, G. / Daudin, B. / Adelmann, C. / Peyla, P. / Materials Research Society et al. | 2000
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The Effect of Al in Plasma-Assisted MBE-Grown GaNZsebok, O. / Thordson, J. V. / Zhao, Q. / Sodervall, U. / Ilver, L. / Andersson, T. G. / Materials Research Society et al. | 2000
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Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of TemperatureFernandez, J. R. L. / Chitta, V. A. / Abramof, E. / da Silva, A. F. / Leite, J. R. / Tabata, A. / As, D. J. / Frey, T. / Schikora, D. / Lischka, K. et al. | 2000
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Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor DepositionYoshida, S. / Kimura, T. / Wu, J. / Kikawa, J. / Onabe, K. / Shiraki, Y. / Materials Research Society et al. | 2000
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Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using TertiarybutylhydrazineSchmidtling, T. K. / Klein, M. / Pohl, U. W. / Richter, W. / Materials Research Society et al. | 2000
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TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBESarney, W. L. / Salamanca-Riba, L. / Ramachandran, V. / Feenstra, R. M. / Greve, D. W. / Materials Research Society et al. | 2000
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Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPEGiannini, C. / Carlino, E. / Tapfer, L. / Hohnsdorf, F. / Koch, J. / Stolz, W. / Materials Research Society et al. | 2000
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Formation and Stability of the Prismatic Stacking Fault in Wurtzite (Al,Ga,In) NitridesRuterana, P. / Bere, A. / Nouet, G. / Materials Research Society et al. | 2000
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Microstructural Investigations on GaN Films Grown by Laser Induced Molecular Beam EpitaxyZhou, H. / Phillipp, F. / Gross, M. / Schroder, H. / Materials Research Society et al. | 2000
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GaN Decomposition in AmmoniaKoleske, D. D. / Wickenden, A. E. / Henry, R. L. / Materials Research Society et al. | 2000
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Surface Activity of Magnesium During GaN Molecular Beam Epitaxial GrowthRamachandran, V. / Feenstra, R. M. / Northrup, J. E. / Greve, D. W. / Materials Research Society et al. | 2000
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Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by SiAs, D. J. / Richter, A. / Busch, J. / Schottker, B. / Lubbers, M. / Mimkes, J. / Schikora, D. / Lischka, K. / Kriegseis, W. / Burkhardt, W. et al. | 2000
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Activation of Beryllium-Implanted GaN by Two-Step AnnealingSun, Y. / Tan, L. S. / Chua, S. J. / Prakash, S. / Materials Research Society et al. | 2000
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Co-Doping Characteristics of Si and Zn with Mg in p-Type GaNKim, K. S. / Oh, C. S. / Han, M. S. / Kim, C. S. / Yang, G. M. / Yang, J. W. / Hong, C.-H. / Youn, C. J. / Lim, K. Y. / Lee, H. J. et al. | 2000
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Structural and Optical Property Investigations on Mg-Alloying in Epitaxial Zinc Oxide Films on SapphireSharma, A. K. / Jin, C. / Kvit, A. / Narayan, J. / Muth, J. F. / Teng, C. W. / Kolbas, R. M. / Holland, O. W. / Materials Research Society et al. | 2000
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Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal MicroscopeFlorescu, D. I. / Asnin, V. A. / Mourokh, L. G. / Pollak, F. H. / Molnar, R. J. / Materials Research Society et al. | 2000
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High Temperature Hardness of Bulk Single Crystal GaNYonenaga, I. / Hoshi, T. / Usui, A. / Materials Research Society et al. | 2000
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AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical PropertiesPiner, E. L. / Keogh, D. M. / Flynn, J. S. / Redwing, J. M. / Materials Research Society et al. | 2000
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Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?Deng, J. / Gaska, R. / Shur, M. S. / Khan, M. A. / Yang, J. W. / Materials Research Society et al. | 2000
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Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect TransistorsMaeda, N. / Saitoh, T. / Tsubaki, K. / Nishida, T. / Kobayashi, N. / Materials Research Society et al. | 2000
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High-Temperature Reliability of GaN Electronic DevicesYoshida, S. / Suzuki, J. / Materials Research Society et al. | 2000
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Fabrication and Characterization of GaN Junction Field Effect TransistorsZhang, L. / Lester, L. F. / Bacal, A. G. / Shul, R. J. / Chang, P. C. / Willison, C. G. / Mishra, U. K. / DenBaars, S. P. / Zolper, J. C. / Materials Research Society et al. | 2000
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The Atomic Structure of Extended Defects in GaNRuterana, P. / Nouet, G. / Materials Research Society et al. | 2000
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TEM Study of Bulk AlN Growth by Physical Vapor TransportSarney, W. L. / Salamanca-Riba, L. / Hossain, T. / Zhou, P. / Jayatirtha, H. N. / Kang, H. H. / Vispute, R. D. / Spencer, M. / Jones, K. A. / Materials Research Society et al. | 2000
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Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial LayersKirchner, V. / Heinke, H. / Einfeldt, S. / Hommel, D. / Domagala, J. Z. / Leszczynski, M. / Materials Research Society et al. | 2000
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The Role of the Multi Buffer Layer Technique on the Structural Quality of GaNBenamara, M. / Liliental-Weber, Z. / Mazur, J. H. / Swider, W. / Washburn, J. / Iwaya, M. / Akasaki, I. / Amano, H. / Materials Research Society et al. | 2000
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Physical Properties of Silicon Doped Heteroepitaxial MOCVD Grown GaN: Influence of Doping Level and StressHageman, P. R. / Kirilyuk, V. / Zauner, A. R. A. / Bauhuis, G. J. / Larsen, P. K. / Materials Research Society et al. | 2000
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Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron BeamTrager-Cowan, C. / McColl, D. / Sweeney, F. / Grimson, S. T. F. / Treguer, J.-F. / Mohammed, A. / Middleton, P. G. / Manson-Smith, S. K. / O'Donnell, K. P. / Van der Stricht, W. et al. | 2000
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MOVPE Growth of Quaternary (Al,Ga,In)N for UV OptoelectronicsHan, J. / Figiel, J. J. / Petersen, G. A. / Myers, S. M. / Crawford, M. H. / Banas, M. A. / Hearne, S. J. / Materials Research Society et al. | 2000
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Homoepitaxial Growth on Misoriented GaN Substrates by MOCVDZauner, A. R. A. / Schermer, J. J. / van Enckevort, W. J. P. / Kirilyuk, V. / Weyher, J. L. / Grzegory, I. / Hageman, P. R. / Larsen, P. K. / Materials Research Society et al. | 2000
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AlN Wafers Fabricated by Hydride Vapor Phase EpitaxyNikolaev, A. / Nikitina, I. / Zubrilov, A. / Mynbaeva, M. / Melnik, Y. / Dmitriev, V. / Materials Research Society et al. | 2000
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GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded TechniqueSukhoveyev, V. A. / Ivantsov, V. A. / Nikitina, I. P. / Babanin, A. I. / Polyakov, A. Y. / Govorkov, A. V. / Smirnov, N. B. / Mil'vidskii, M. G. / Dmitriev, V. A. / Materials Research Society et al. | 2000
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Preparation and Characterization of Single-Crystal Aluminum Nitride SubstratesSchowalter, L. J. / Rojo, J. C. / Yakolev, N. / Shusterman, Y. / Dovidenko, K. / Wang, R. / Bhat, I. / Slack, G. A. / Materials Research Society et al. | 2000
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Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser DiodesAkasaki, I. / Kamiyama, S. / Detchprohm, T. / Takeuchi, T. / Amano, H. / Materials Research Society et al. | 2000
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High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN LayerJurkovic, M. J. / Li, L. K. / Turk, B. / Wang, W. I. / Syed, S. / Simonian, D. / Stormer, H. L. / Materials Research Society et al. | 2000
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High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with AmmoniaNikishin, S. A. / Faleev, N. N. / Antipov, V. G. / Francoeur, S. / de Peralta, L. G. / Seryogin, G. A. / Holtz, M. / Prokofyeva, T. I. / Chu, S. N. G. / Zubrilov, A. S. et al. | 2000
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MBE Growth of Nitride-Arsenide Materials for Long Wavelength OptoelectronicsSpruytte, S. G. / Coldren, C. W. / Marshall, A. F. / Larson, M. C. / Harris, J. S. / Materials Research Society et al. | 2000
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Structural and Electronic Properties of Line Defects in GaNElsner, J. / Blumenau, A. T. / Frauenheim, T. / Jones, R. / Heggie, M. I. / Materials Research Society et al. | 2000
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Simulation of H Behavior in p-GaN(Mg) at Elevated TemperaturesMyers, S. M. / Wright, A. F. / Petersen, G. A. / Seager, C. H. / Crawford, M. H. / Wampler, W. R. / Han, J. / Materials Research Society et al. | 2000
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Mg Segregation, Difficulties of P-Doping in GaNLiliental-Weber, Z. / Benamara, M. / Swider, W. / Washburn, J. / Grzegory, I. / Porowski, S. / Dupuis, R. D. / Eiting, C. J. / Materials Research Society et al. | 2000
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Optical Activation Behavior of Ion Implanted Acceptor Species in GaNSkromme, B. J. / Martinez, G. L. / Materials Research Society et al. | 2000
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Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/Al~xGA~1~-~xN SuperlatticesZhou, L. / Khan, F. / Ping, A. T. / Osinski, A. / Adesida, I. / Materials Research Society et al. | 2000
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High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface TreatmentJang, J.-S. / Park, S.-J. / Seong, T.-Y. / Materials Research Society et al. | 2000
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Electrical Measurements in GaN: Point Defects and DislocationsLook, D. C. / Fang, Z. / Polenta, L. / Materials Research Society et al. | 2000
- W10.6.1
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Properties and Effects of Hydrogen in GaNPearton, S. J. / Cho, H. / Ren, F. / Chyi, J.-I. / Han, J. / Wilson, R. G. / Materials Research Society et al. | 2000
- W10.7.1
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Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaNWampler, W. R. / Barbour, J. C. / Seager, C. H. / Myers, S. M. / Wright, A. F. / Han, J. / Materials Research Society et al. | 2000
- W10.8.1
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Surface Conversion Effects in Plasma-Damaged p-GaNCao, X. A. / Pearton, S. J. / Dang, G. T. / Zhang, A. P. / Ren, F. / Shul, R. J. / Zhang, L. / Hickman, R. / Van Hove, J. M. / Materials Research Society et al. | 2000
- W10.9.1
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Zirconium Mediated Hydrogen Outdiffusion from p-GaNKaminska, E. / Piotrowska, A. / Barcz, A. / Jasinski, J. / Zielinski, M. / Golaszewska, K. / Davis, R. F. / Goldys, E. / Tomsia, K. / Materials Research Society et al. | 2000
- W11.1.1
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A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire SubstratesSampath, A. V. / Misra, M. / Seth, K. / Fedyunin, Y. / Ng, H. M. / Iliopoulos, E. / Feit, Z. / Moustakas, T. D. / Materials Research Society et al. | 2000
- W11.2.1
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Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam EpitaxyMisra, M. / Sampath, A. V. / Moustakas, T. D. / Materials Research Society et al. | 2000
- W11.3.1
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Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS DevicesVispute, R. D. / Patel, A. / Baynes, K. / Ming, B. / Sharma, R. P. / Venkatesan, T. / Scozzie, C. J. / Lelis, A. / Zheleva, T. / Jones, K. A. et al. | 2000
- W11.5.1
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Fabrication and Characterization of Metal-Ferroelectric-GaN StructuresLi, W. P. / Zhang, R. / Yin, J. / Liu, X. H. / Zhou, Y. G. / Shen, B. / Chen, P. / Chen, Z. Z. / Shi, Y. / Jiang, R. L. et al. | 2000
- W11.8.1
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Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN HeterostructuresMichel, A. / Hanser, D. / Davis, R. F. / Qiao, D. / Lau, S. S. / Yu, L. S. / Sun, W. / Asbeck, P. / Materials Research Society et al. | 2000
- W11.9.1
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Low-Frequency Noise in SiO2/AlGaN/GaN Heterostructures on SiC and Sapphire SubstratesPala, N. / Gaska, R. / Shur, M. / Yang, J. W. / Khan, M. A. / Materials Research Society et al. | 2000
- W11.10.1
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Electrical Transport of an AlGaN/GaN Two-Dimensional Electron GasSaxler, A. / Debray, P. / Perrin, R. / Elhamri, S. / Mitchel, W. C. / Elsass, C. R. / Smorchkova, I. P. / Heying, B. / Haus, E. / Fini, P. et al. | 2000
- W11.12.1
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Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped HeterostructuresLi, J. Z. / Li, J. / Lin, J. Y. / Jiang, H. X. / Materials Research Society et al. | 2000
- W11.13.1
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Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETsFarahmand, M. / Brennan, K. F. / Materials Research Society et al. | 2000
- W11.15.1
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New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect TransistorsAlbrecht, J. D. / Ruden, P. P. / Ancona, M. G. / Materials Research Society et al. | 2000
- W11.16.1
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High-Gain, High-Speed ZnO MSM Ultraviolet PhotodetectorsShen, H. / Wraback, M. / Gorla, C. R. / Liang, S. / Emanetoglu, N. / Liu, Y. / Lu, Y. / Materials Research Society et al. | 2000
- W11.18.1
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Temperature Distribution in InGaN-MQW LEDs Under OperationSchwegler, V. / Seyboth, M. / Schad, S. / Scherer, M. / Kirchner, C. / Kamp, M. / Stempfle, U. / Limmer, W. / Sauer, R. / Materials Research Society et al. | 2000
- W11.21.1
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Electron Beam Pumping in Nitride Vertical Cavities With GaN/A1~0~.~2~5Ga~0~.~7~5Bragg ReflectorsKlausing, H. / Aderhold, J. / Fedler, F. / Mistele, D. / Stemmer, J. / Semchinova, O. / Graul, J. / Danhardt, J. / Panzer, S. / Materials Research Society et al. | 2000
- W11.22.1
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Microstructure-based Lasing in GaN/AlGaN Separate Confinement HeterostructuresBidnyk, S. / Lam, J. B. / Little, B. D. / Gainer, G. H. / Kwon, Y. H. / Song, J. J. / Bulman, G. E. / Kong, H. S. / Materials Research Society et al. | 2000
- W11.25.1
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Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting DiodesKudryashov, V. E. / Mamakin, S. S. / Turkin, A. N. / Yunovich, A. E. / Kovalev, A. N. / Manyakhin, F. I. / Materials Research Society et al. | 2000
- W11.26.1
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Optical Spectroscopy and Composition of InGaNO'Donnell, K. P. / Martin, R. W. / White, M. E. / Jacobs, K. / Van der Stricht, W. / Demeester, P. / Vantomme, A. / Wu, M. F. / Mosselmans, J. F. W. / Materials Research Society et al. | 2000
- W11.28.1
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Sign of the Piezoelectric Field in Asymmetric GaInN/AlGaN/GaN Single and Double Quantum Wells on SiCIm, J. S. / Hangleiter, A. / Off, J. / Scholz, F. / Materials Research Society et al. | 2000
- W11.31.1
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The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase EpitaxyLi, P. / Chua, S. J. / Hao, M. / Wang, W. / Zhang, X. / Sugahara, T. / Sakai, S. / Materials Research Society et al. | 2000
- W11.32.1
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Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric FieldKinoshita, A. / Hirayama, H. / Riblet, P. / Ainoya, M. / Hirata, A. / Aoyagi, Y. / Materials Research Society et al. | 2000
- W11.34.1
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Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam EpitaxyKaschner, A. / Holst, J. / von Gfug, U. / Hoffmann, A. / Bertram, F. / Riemann, T. / Rudloff, D. / Fischer, P. / Christen, J. / Averbeck, R. et al. | 2000
- W11.35.1
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Optical Properties of AlGaN Quantum Well StructuresHirayama, H. / Enomoto, Y. / Kinoshita, A. / Hirata, A. / Aoyagi, Y. / Materials Research Society et al. | 2000
- W11.37.1
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Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen SourceSemendy, F. / Li, L. K. / Jurkovic, M. J. / Wang, W. I. / Materials Research Society et al. | 2000
- W11.38.1
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Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In ContentVantomme, A. / Wu, M. F. / Hogg, S. / Langouche, G. / Jacobs, K. / Moerman, I. / White, M. E. / O'Donnell, K. P. / Nistor, L. / Van Landuyt, J. et al. | 2000
- W11.39.1
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Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman SpectroscopySchubert, M. / Kasic, A. / Tiwald, T. E. / Woollam, J. A. / Harle, V. / Scholz, F. / Materials Research Society et al. | 2000
- W11.41.1
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Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition RegimeCrawford, M. H. / Han, J. / Banas, M. A. / Myers, S. M. / Petersen, G. A. / Figiel, J. J. / Materials Research Society et al. | 2000
- W11.42.1
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Electronic Raman Scattering From Mg-Doped Wurtzite GaNTsen, K. T. / Koch, C. / Chen, Y. / Morkoc, H. / Li, J. / Lin, J. Y. / Jiang, H. X. / Materials Research Society et al. | 2000
- W11.44.1
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Photoluminescence Characterization of Mg Implanted GaNRonning, C. / Hofsass, H. C. / Stotzler, A. / Deicher, M. / Carlson, E. P. / Hartlieb, P. J. / Gehrke, T. / Rajagopal, P. / Davis, R. F. / Materials Research Society et al. | 2000
- W11.45.1
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An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam EpitaxyPtak, A. J. / Stoica, V. A. / Holbert, L. J. / Moldovan, M. / Myers, T. H. / Materials Research Society et al. | 2000
- W11.46.1
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The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN FilmsKuball, M. / Hayes, J. M. / Suski, T. / Jun, J. / Tan, H. H. / Williams, J. S. / Jagadish, C. / Materials Research Society et al. | 2000
- W11.47.1
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Carrier Dynamics Studies of Thick GaN Grown by HVPEBunea, G. E. / Unlu, M. S. / Goldberg, B. B. / Materials Research Society et al. | 2000
- W11.49.1
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Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride CompoundsDogheche, E. / Belgacem, B. / Remiens, D. / Ruterana, P. / Omnes, F. / Materials Research Society et al. | 2000
- W11.50.1
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Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) SapphireSalviati, G. / Armani, N. / Zanotti-Fregonara, C. / Gombia, E. / Albrecht, M. / Strunk, H. P. / Mayer, M. / Kamp, M. / Gasparotto, A. / Materials Research Society et al. | 2000
- W11.51.1
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A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence SpectroscopyBell, A. / Harrison, I. / Korakakis, D. / Larkins, E. C. / Hayes, J. M. / Kuball, M. / Materials Research Society et al. | 2000
- W11.52.1
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Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on SapphireTiginyanu, I. M. / Kravetsky, I. V. / Pavlidis, D. / Eisenbach, A. / Hildebrandt, R. / Marowsky, G. / Hartnagel, H. L. / Materials Research Society et al. | 2000
- W11.53.1
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Radiative Recombination Between Two-Dimensional Electron Gas and Photoexcited Holes in Modulation-Doped Al~xGa~1~-~xN/GaN HeterostructuresShen, B. / Someya, T. / Moriwaki, O. / Arakawa, Y. / Materials Research Society et al. | 2000
- W11.54.1
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Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function ModelWagner, J. / Ramakrishnan, A. / Obloh, H. / Kunzer, M. / Kohler, K. / Johs, B. / Materials Research Society et al. | 2000
- W11.55.1
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Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial OvergrowthWraback, M. / Shen, H. / Eiting, C. J. / Carrano, J. C. / Dupuis, R. D. / Materials Research Society et al. | 2000
- W11.56.1
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The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire TemplatesYoung, A. P. / Brillson, L. J. / Naoi, Y. / Tu, C. W. / Materials Research Society et al. | 2000
- W11.57.1
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Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin FilmsCho, Y.-H. / Gainer, G. H. / Lam, J. B. / Song, J. J. / Yang, W. / Jhe, W. / Materials Research Society et al. | 2000
- W11.58.1
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Time-Resolved Spectroscopy of InGaNPophristic, M. / Long, F. H. / Tran, C. / Ferguson, I. T. / Materials Research Society et al. | 2000
- W11.62.1
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Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:ErOverberg, M. E. / Abernathy, C. R. / Pearton, S. J. / Wilson, R. G. / Zavada, J. M. / Materials Research Society et al. | 2000
- W11.64.1
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Photoluminescence and Cathodoluminescence of GaN Doped With PrLozykowski, H. J. / Jadwisienczak, W. M. / Brown, I. / Materials Research Society et al. | 2000
- W11.65.1
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Comparison of the Optical Properties of Er^3^+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)Hommerich, U. H. / Seo, J. T. / MacKenzie, J. D. / Abernathy, C. R. / Birkhahn, R. / Steckl, A. J. / Zavada, J. M. / Materials Research Society et al. | 2000
- W11.66.1
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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl~2/Ar DischargesZhang, A. P. / Dang, G. / Ren, F. / Cao, X. A. / Cho, H. / Lambers, E. S. / Pearton, S. J. / Shul, R. J. / Zhang, L. / Baca, A. G. et al. | 2000
- W11.67.1
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Processing And Device Performance Of GaN Power RectifiersZhang, A. P. / Dang, G. T. / Cao, X. A. / Cho, H. / Ren, F. / Han, J. / Chyi, J.-I. / Lee, C.-M. / Nee, T.-E. / Chuo, C.-C. et al. | 2000
- W11.68.1
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Comparison of Implant Isolation Species for GaN Field-Effect Transistor StructureDang, G. / Cao, X. A. / Ren, F. / Pearton, S. J. / Han, J. / Baca, A. G. / Shul, R. J. / Wilson, R. G. / Materials Research Society et al. | 2000
- W11.69.1
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Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser MicromachiningZhao, Q. / Lukitsch, M. / Xu, J. / Auner, G. / Niak, R. / Kuo, P.-K. / Materials Research Society et al. | 2000
- W11.70.1
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Wet Etching of Ion-Implanted GaN Crystals by AZ-400K PhotoresistCarosella, C. A. / Molnar, B. / Schiestel, S. / Sprague, J. A. / Materials Research Society et al. | 2000
- W11.71.1
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Oxidation of Gallium Nitride Epilayers in Dry OxygenChen, P. / Zhang, R. / Xu, X. F. / Chen, Z. Z. / Zhou, Y. G. / Xie, S. Y. / Shi, Y. / Shen, B. / Gu, S. L. / Huang, Z. C. et al. | 2000
- W11.73.1
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A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaNHwang, J. M. / Hsieh, J. T. / Hwang, H. L. / Hung, W. H. / Materials Research Society et al. | 2000
- W11.74.1
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Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED ApplicationsKim, K. S. / Hong, C.-H. / Lee, W.-H. / Kim, C. S. / Cha, O. H. / Yang, G. M. / Suh, E.-K. / Lim, K. Y. / Lee, H. J. / Cho, H. K. et al. | 2000
- W11.75.1
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The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium NitrideRuterana, P. / Nouet, G. / Kehagias, T. / Komninou, P. / Karakostas, T. / di Forte Poisson, M. A. / Huet, F. / Materials Research Society et al. | 2000
- W11.76.1
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Highly Chemical Reactive Ion Etching of Gallium NitrideKarouta, F. / Jacobs, B. / Moerman, I. / Jacobs, K. / Weyher, J. L. / Porowski, S. / Crane, R. / Hageman, P. R. / Materials Research Society et al. | 2000
- W11.77.1
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Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic TreatmentPark, M.-R. / Anderson, W. A. / Park, S.-J. / Materials Research Society et al. | 2000
- W11.78.1
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A Thermodynamic Approach to Ohmic Contact Formation to p-GaNLiu, B. / Ahonen, M. H. / Holloway, P. H. / Materials Research Society et al. | 2000
- W11.79.1
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Metal/GaN Contacts Studied by Electron SpectroscopiesDumont, J. / Caudano, R. / Sporken, R. / Monroy, E. / Munoz, E. / Beaumont, B. / Gibart, P. / Materials Research Society et al. | 2000
- W11.80.1
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Deep Levels in n-Type Schottky and p^+-n Homojunction GaN DiodesHierro, A. / Kwon, D. / Ringel, S. A. / Hansen, M. / Mishra, U. K. / DenBaars, S. P. / Speck, J. S. / Materials Research Society et al. | 2000
- W11.81.1
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Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN FilmsPolyakov, A. Y. / Smirnov, N. B. / Govorkov, A. V. / Usikov, A. S. / Shmidt, N. M. / Pushnyi, B. V. / Tsvetkov, D. V. / Stepanov, S. I. / Dmitriev, V. A. / Mil'vidskii, M. G. et al. | 2000
- W11.82.1
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Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient SpectroscopyWitte, H. / Krtschil, A. / Lisker, M. / Rudloff, D. / Christen, J. / Krost, A. / Stutzmann, M. / Scholz, F. / Materials Research Society et al. | 2000
- W11.83.1
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Photocurrent Spectroscopy Investigations of Mg-Related Defects Levels in p-Type GaNChung, S. J. / Cha, O. H. / Cho, H. K. / Jeong, M. S. / Hong, C. H. / Suh, E.-K. / Lee, H. J. / Materials Research Society et al. | 2000
- W11.84.1
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Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam EpitaxyFang, Z.-Q. / Look, D. C. / Kim, W. / Morkoc, H. / Materials Research Society et al. | 2000
- W12.3.1
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Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman MappingKuball, M. / Benyoucef, M. / Morrissey, F. H. / Foxon, C. T. / Materials Research Society et al. | 2000
- W12.4.1
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Spectroscopy in Polarized and Piezoelectric AlGaInN HeterostructuresWetzel, C. / Takeuchi, T. / Amano, H. / Akasaki, I. / Materials Research Society et al. | 2000
- W12.6.1
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Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum WellsBonfiglio, A. / Lomascolo, M. / Traetta, G. / Cingolani, R. / Di Carlo, A. / Sala, F. D. / Lugli, P. / Botchkarev, A. / Morkoc, H. / Materials Research Society et al. | 2000
- W12.7.1
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Comparison Study of Structural and Optical Properties of In~xGa~1~-~xN/GaN Quantum Wells With Different In CompositionsKwon, Y.-H. / Gainer, G. H. / Bidnyk, S. / Cho, Y. H. / Song, J. J. / Hansen, M. / DenBaars, S. P. / Materials Research Society et al. | 2000
- W12.8.1
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Emission at 247 nm from GaN Quantum Wells Grown by MOCVDSomeya, T. / Hoshino, K. / Harris, J. C. / Tachibana, K. / Kako, S. / Arakawa, Y. / Materials Research Society et al. | 2000
- W12.9.1
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Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive IsotopesStotzler, A. / Weissenborn, R. / Deicher, M. / Materials Research Society et al. | 2000
- xxv
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PrefaceMaterials Research Society et al. | 2000
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AcknowledgmentsMaterials Research Society et al. | 2000
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Materials Research Society Symposium ProceedingsMaterials Research Society et al. | 2000