X-Ray Photoemission Electron Microscopy for the Study of Semiconductor Materials (Englisch)
- Neue Suche nach: Anders, S.
- Neue Suche nach: Stammler, T.
- Neue Suche nach: Padmore, H. A.
- Neue Suche nach: Terminello, L. J.
- Neue Suche nach: Jankowski, A. F.
- Neue Suche nach: Stohr, J.
- Neue Suche nach: Diaz, J.
- Neue Suche nach: Cossy-Favre, A.
- Neue Suche nach: Singh, S.
- Neue Suche nach: Anders, S.
- Neue Suche nach: Stammler, T.
- Neue Suche nach: Padmore, H. A.
- Neue Suche nach: Terminello, L. J.
- Neue Suche nach: Jankowski, A. F.
- Neue Suche nach: Stohr, J.
- Neue Suche nach: Diaz, J.
- Neue Suche nach: Cossy-Favre, A.
- Neue Suche nach: Singh, S.
- Neue Suche nach: Seiler, D. G.
In:
Characterization and metrology for ULSI technology
;
873-878
;
1998
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:X-Ray Photoemission Electron Microscopy for the Study of Semiconductor Materials
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Beteiligte:Anders, S. ( Autor:in ) / Stammler, T. ( Autor:in ) / Padmore, H. A. ( Autor:in ) / Terminello, L. J. ( Autor:in ) / Jankowski, A. F. ( Autor:in ) / Stohr, J. ( Autor:in ) / Diaz, J. ( Autor:in ) / Cossy-Favre, A. ( Autor:in ) / Singh, S. ( Autor:in ) / Seiler, D. G.
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Kongress:International conference, Characterization and metrology for ULSI technology ; 1998 ; Gaithersburg, MD
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Erschienen in:AIP CONFERENCE PROCEEDINGS ; 873-878
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Verlag:
- Neue Suche nach: American Institute of Physics
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Erscheinungsort:Woodbury, NY
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Erscheinungsdatum:01.01.1998
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Format / Umfang:6 pages
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
-
Metrology Needs for the Semiconductor Industry Over the Next DecadeMelliar-Smith, M. / Diebold, A. C. et al. | 1998
- 21
-
Industry/University/Government Partnerships in Metrology: A New Paradigm for the FutureHelms, C. R. et al. | 1998
- 31
-
Gauging the Future: The Long Term Business Overlook for Metrology and Wafer Inspection EquipmentPerloff, D. S. et al. | 1998
- 39
-
Effect of Technology Scaling on MOS Electrical CharacterizationAlavi, M. / Rios, R. et al. | 1998
- 47
-
Elements for Successful Sensor-Based Process Control {Integrated Metrology}Butler, S. W. et al. | 1998
- 57
-
Characterization and Metrology Implications of the 1997 NTRSClass, W. / Wortman, J. J. et al. | 1998
- 65
-
Characterization of Ultrathin Gate Oxides for Advanced MOSFETsHirose, M. / Mizubayashi, W. / Fukuda, M. / Miyazaki, S. et al. | 1998
- 73
-
Modeling of Manufacturing Sensitivity and of Statistically Based Process Control Requirements for a 0.18 mum NMOS DeviceZeitzoff, P. M. / Tasch, A. F. / Moore, W. E. / Khan, S. A. / Angelo, D. et al. | 1998
- 83
-
An Analytical Framework for First-Order CMOS Device Designdel Alamo, J. A. / Lynch, W. T. / Antoniadis, D. A. et al. | 1998
- 91
-
Physical Modeling of Shallow/Deep JunctionsRafferty, C. et al. | 1998
- 97
-
Model-Based Silicon Wafer Criteria for Optimal Integrated Circuit PerformanceHuff, H. R. / Goodall, R. K. / Bullis, W. M. / Moreland, J. A. / Kirscht, F. G. / Wilson, S. R. / The NTRS Starting Materials Team et al. | 1998
- 115
-
Reliability Characterization of Ultra-Thin Film DielectricsSuehle, J. S. et al. | 1998
- 121
-
Thin Film Ellipsometry MetrologyDurgapal, P. / Ehrstein, J. R. / Nguyen, N. V. et al. | 1998
- 133
-
Analysis of Organic Contamination in Semiconductor ProcessingSmith, P. J. / Lindley, P. M. et al. | 1998
- 143
-
In-Line Characterization of Doping Technologies for ULSI: Requirements and CapabilitiesLarson, L. / Current, M. et al. | 1998
- 153
-
Metrology of 300 mm Silicon Wafers: Challenges and ResultsWagner, P. et al. | 1998
- 161
-
Metrology Issues for Processing of 300 mm WafersWatanabe, K. / Koike, A. et al. | 1998
- 169
-
Metrology Aspects of SIMS Depth Profiling for Advanced ULSI ProcessesBudrevich, A. / Hunter, J. et al. | 1998
- 185
-
Characterization of Thin SiO~2 on Si by Spectroscopic Ellipsometry, Neutron Reflectometry, and X-Ray ReflectometryRichter, C. A. / Nguyen, N. V. / Dura, J. A. / Majkrzak, C. F. et al. | 1998
- 191
-
Structure, Composition, and Strain Profiling of Si/SiO~2 InterfacesDuscher, G. / Pennycook, S. J. / Browning, N. D. / Rupangudi, R. / Takoudis, C. / Gao, H.-J. / Singh, R. et al. | 1998
- 197
-
Thickness Evaluation of Ultrathin Gate Oxides at the LimitMoon, D. W. / Kim, H. K. / Lee, H. J. / Cho, Y. J. / Cho, H. M. et al. | 1998
- 201
-
Determination of Shallow Dopants in Silicon by Low-Temperature FTIR SpectroscopyAlt, H. C. / Gellon, M. / Pretto, M. G. / Scala, R. / Bittersberger, F. / Hesse, K. / Kempf, A. et al. | 1998
- 207
-
High-Resolution, High-Accuracy, Mid-IR (450 cm^-^1Chandler-Horowitz, D. / Amirtharaj, P. M. / Stoup, J. R. et al. | 1998
- 213
-
Infrared Spectroscopy for Process Control and Fault Detection of Advanced Semiconductor ProcessesRosenthal, P. / Aarts, W. / Bonanno, A. / Boning, D. S. / Charpenay, S. / Gower, A. / Richter, M. / Smith, T. / Solomon, P. / Spartz, M. et al. | 1998
- 221
-
Measurement of Silicon Doping Profiles Using Infrared Ellipsometry Combined with Anodic Oxidation SectioningTiwald, T. E. / Miller, A. D. / Woollam, J. A. et al. | 1998
- 226
-
Verification of Carrier Density Profiles Derived from Spreading Resistance Measurements by Comparing Measured and Calculated Sheet Resistance ValuesMazur, R. G. / Ramey, S. M. / Hartford, C. L. / Hartford, E. J. / Kouno, M. / Tan, L. S. et al. | 1998
- 231
-
Leakage Compensated Charge Method for Determining Static C-V Characteristics of Ultra-Thin MOS CapacitorsSong, H. / Dons, E. / Sun, X. Q. / Farmer, K. R. et al. | 1998
- 235
-
Characterization of Ultra-Thin Oxides Using Electrical C-V and I-V MeasurementsHauser, J. R. / Ahmed, K. et al. | 1998
- 240
-
Threshold Voltage (V~T) Control of Sub-0.25 mum Processes Using Mercury Gate MOS CapacitorsHillard, R. J. / Mazur, R. G. / Sherbondy, J. C. / Peitersen, L. E. / Wilson, M. / Herlocher, R. H. et al. | 1998
- 245
-
Advances in Surface Photovoltage Technique for Monitoring of the IC ProcessesNauka, K. / Lagowski, J. et al. | 1998
- 250
-
Non-Contact Monitoring of Electrical Characteristics of Silicon Surface and Near-Surface RegionRoman, P. / Brubaker, M. / Staffa, J. / Kamieniecke, E. / Ruzyllo, J. et al. | 1998
- 255
-
Contactless Transient Spectroscopy for the Measurement of Localized States in SemiconductorsKishino, S. / Yoshida, H. et al. | 1998
- 261
-
Tunneling Spectroscopy of the Silicon Metal-Oxide-Semiconductor SystemLye, W.-K. / Ma, T.-P. / Barker, R. C. / Hasegawa, E. / Hu, Y. / Kuehne, J. / Frystak, D. et al. | 1998
- 266
-
Characterization of Ultra-Shallow Junctions with Tapered Groove Profilometry and Other TechniquesPrussin, S. / Bil, C. A. / Downey, D. F. / Meloni, M. L. / Osburn, C. M. et al. | 1998
- 273
-
A New Low Thermal Budget Approach to Interface Nitridation for Ultra-Thin Silicon Dioxide Gate Dielectrics by Combined Plasma-Assisted and Rapid Thermal ProcessingNiimi, H. / Yang, H. Y. / Lucovsky, G. et al. | 1998
- 278
-
Development of a Metrology Method for Composition and Thickness of Barium Strontium Titanate Thin FilmsRemmel, T. / Werho, D. / Liu, R. / Chu, P. et al. | 1998
- 283
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Physical and Chemical Characterization of Barium Strontium Titanate Thin FilmsRemmel, T. / Chen, W. / Liu, R. / Kottke, M. / Gregory, R. / Fejes, P. / Baumert, B. / Chu, P. et al. | 1998
- 288
-
Suppression of Boron Penetration for P^+ Polysilicon Gate Electrodes by Ultra-Thin RPECVD Nitride Films in Composite Oxide-Nitride DielectricsWu, Y. / Lucovsky, G. et al. | 1998
- 293
-
Luminescence Measurements of Sub-Oxide Band-Tail and Si Dangling Bond States at Ultrathin Si-SiO~2 InterfacesYoung, A. P. / Schafer, J. / Jessen, G. H. / Bandhu, R. / Brillson, L. J. / Lucovsky, G. / Niimi, H. et al. | 1998
- 298
-
Optical Studies of Phosphorus-Doped Poly-Si FilmsZollner, S. / Liu, R. / Christiansen, J. / Chen, W. / Monarch, K. / Lee, T.-C. / Singh, R. / Yater, J. / Paulson, W. M. / Feng, C. et al. | 1998
- 303
-
Calibration Wafer for Temperature Measurements in RTP ToolsKreider, K. G. / DeWitt, D. P. / Tsai, B. K. / Lovas, F. J. / Allen, D. W. et al. | 1998
- 310
-
Rapid Non-Invasive Temperature Measurement of Complex Si Structures Using In-Situ Spectroscopic EllipsometryCarline, R. T. / Russell, J. / Pickering, C. / Hope, D. A. O. et al. | 1998
- 315
-
Fabrication of SiGe and SiGeC Epitaxial Layers by Ion Implantation and Excimer Laser AnnealingBoher, P. / Stehle, J.-L. / Piel, J.-P. / Fogarassy, E. et al. | 1998
- 321
-
Application of Electrical Step Resistance Measurement Technique for ULSI/VLSI Process CharacterizationJohnson, W. H. / Hong, C. / Glover, B. et al. | 1998
- 326
-
In-Situ Surface and Interface Characterization by Optical Second Harmonic Generation (SHG) of Silicon Dioxide Fabrication with High Purity OzoneNakamura, K. / Kurokawa, A. / Ichimura, S. et al. | 1998
- 331
-
Analysis of Reflectometry and Ellipsometry Data from Patterned StructuresLee, M. E. / Galarza, C. / Kong, W. / Sun, W. / Terry, F. L. et al. | 1998
- 336
-
In Situ Layer Characterization by Spectroscopic Ellipsometry at High TemperaturesLehnert, W. / Petrik, P. / Schneider, C. / Pfitzner, L. / Ryssel, H. et al. | 1998
- 341
-
Instrumental and Computational Advances for Real-Time Process Control Using Spectroscopic EllipsometryPickering, C. / Russell, J. / Hope, D. A. O. / Carline, R. T. / Marrs, A. D. / Robbins, D. J. / Dann, A. et al. | 1998
- 347
-
Evaluation of an Automated Spectroscopic Ellipsometer for In-Line Process ControlPickering, C. / Russell, J. / Nayar, V. / Imschweiler, J. / Wille, H. / Harrington, S. / Wiggins, C. / Stehle, J.-L. / Piel, J.-P. / Bruchez, J. et al. | 1998
- 352
-
Metrology Standards with EllipsometersWoollam, J. A. / Hilfiker, J. N. / Herzinger, C. M. / Synowicki, R. A. / Liphardt, M. et al. | 1998
- 357
-
Evaluation of Surface Depletion Effects in Single-Crystal Test Structures for Reference Materials ApplicationsAllen, R. A. / Ghoshtagore, R. N. et al. | 1998
- 363
-
In-Situ Real-Time Mass Spectroscopic Sensing and Mass Balance Modeling of Selective Area Silicon PECVDChowdhury, A. I. / Klein, T. M. / Parsons, G. N. et al. | 1998
- 369
-
Optical Densitometry Applications for Ion ImplantationEsteves, J. P. / Rendon, M. J. et al. | 1998
- 377
-
Dimensional Metrology Challenges for ULSI InterconnectsHavemann, R. / Marchman, H. / Dixit, G. / Jain, M. / Zielinski, E. / Ralston, A. / Hsu, Y. / Jin, C. / Singh, A. / Schlesinger, J. et al. | 1998
- 385
-
Picosecond Ultrasonics: A New Approach for Control of Thin Metal ProcessesStoner, R. J. / Morath, C. J. / Tas, G. / Antonelli, G. / Maris, H. J. et al. | 1998
- 395
-
Statistical Metrology-Measurement and Modeling of Variation for Advanced Process Development and Design Rule GenerationBoning, D. S. / Chung, J. E. et al. | 1998
- 405
-
Wafer Inspection Technology Challenges for ULSI ManufacturingStokowski, S. / Vaez-Iravani, M. et al. | 1998
- 419
-
All-Optical, Non-Contact Measurement of Copper and Tantalum Films Deposited by PVD and ECD in Blanket Films and Single Damascene StructuresBanet, M. / Yeung, H. / Hanselman, J. / Sola, H. / Fuchs, M. / Lam, H. et al. | 1998
- 424
-
Grain Orientation Mapping of Passivated Aluminum Interconnect Lines by X-Ray Micro-DiffractionChang, C. H. / MacDowell, A. A. / Thompson, A. C. / Padmore, H. A. / Patel, J. R. et al. | 1998
- 427
-
In-Situ Plasma Chamber Monitoring for Feedforward Process ControlKim, J. / Wise, K. D. et al. | 1998
- 431
-
Optical Computer-Aided Tomography Measurements of Plasma Uniformity in an Inductively Coupled DischargeBenck, E. C. / Roberts, J. R. et al. | 1998
- 437
-
Applications of Electron-Interaction Reference Data to the Semiconductor IndustryChristophorou, L. G. / Olthoff, J. K. et al. | 1998
- 442
-
RF Sensing for Real-Time Monitoring of Plasma ProcessingGarvin, C. / Grizzle, J. W. et al. | 1998
- 447
-
Rapid Assessment of Plasma Damage EffectsPeitersen, L. E. / Gruber, G. A. / Hillard, R. J. / Mazur, R. G. / Herlocher, R. H. / Conti, R. et al. | 1998
- 449
-
Novel Ion Current Sensor for Real-Time, In-Situ Monitoring and Control of Plasma ProcessingSobolewski, M. A. et al. | 1998
- 454
-
Spatial Uniformity in Chamber-Cleaning Plasmas Measured Using Planar Laser-Induced FluorescenceSteffens, K. L. / Sobolewski, M. A. et al. | 1998
- 459
-
In Situ Mid-Infrared Analyses of Reactive Gas-Phase Intermediates in TEOS/Ozone SAPCVDWhidden, T. K. / Doiron, S. et al. | 1998
- 465
-
X-Ray Scanning Photoemission Microscopy of Titanium Silicides and Al-Cu InterconnectsLorusso, G. F. / Solak, H. / Singh, S. / Cerrina, F. / Batson, P. J. / Underwood, J. H. et al. | 1998
- 469
-
Thin-Film Metrology by Rapid X-Ray ReflectometryKoppel, L. N. / Parobek, L. et al. | 1998
- 475
-
Energy-Dispersive X-Ray Reflectivity and the Measurement of Thin Film Density for Interlevel Dielectric OptimizationWallace, W. E. / Chiang, C. K. / Wu, W.-L. et al. | 1998
- 481
-
Next Generation Lithography-The Real ChallengeBrown, K. H. et al. | 1998
- 484
-
A Survey of Advanced Excimer Optical Imaging and LithographyMatsumoto, K. / Suwa, K. et al. | 1998
- 491
-
An Overview of CD Metrology for Advanced CMOS Process DevelopmentMarchman, H. et al. | 1998
- 502
-
Overlay Metrology: The Systematic, The Random, and the UglySullivan, N. / Shin, J. et al. | 1998
- 513
-
Metrology of Image PlacementStarikov, A. et al. | 1998
- 539
-
Deep Ultraviolet Laser Metrology for Semiconductor PhotolithographyDowell, M. L. / Cromer, C. L. / Leonhardt, R. W. / Scott, T. R. et al. | 1998
- 543
-
Metrology Applications in Lithography with Variable Angle Spectroscopic EllipsometryHilfiker, J. N. / Carpio, R. / Synowicki, R. A. / Woollam, J. A. et al. | 1998
- 548
-
Novel Metrology for the DUV Photolithography SequenceJakatdar, N. / Niu, X. / Zhang, H. / Bao, J. / Spanos, C. et al. | 1998
- 553
-
At-Wavelength Interferometry of Extreme Ultraviolet Lithographic OpticsLee, S. H. / Naulleau, P. / Goldberg, K. / Tejnil, E. / Medecki, H. / Bresloff, C. / Chang, C. / Attwood, D. / Bokor, J. et al. | 1998
- 559
-
Assessing Polysilicon Linewidth Variation Using Statistical MetrologyMuthukrishnan, N. M. / Prasad, S. et al. | 1998
- 562
-
Nanometrology Using Scanning Probe Microscopy and Its Application to Resist PatternsNagase, M. / Kurihara, K. / Namatsu, H. / Makino, T. et al. | 1998
- 567
-
Intermittent-Contact Scanning Capacitance Microscopy Imaging and Modeling for Overaly MetrologyMayo, S. / Kopanski, J. J. / Guthrie, W. F. et al. | 1998
- 573
-
Optimal Feedforward Recipe Adjustment for CD Control in Semiconductor PatterningRuegsegger, S. / Wagner, A. / Freudenberg, J. / Grimard, D. et al. | 1998
- 581
-
A Proposed Holistic Approach to On-Chip, Off-Chip, Test, and Package InterconnectionsBartelink, D. J. et al. | 1998
- 591
-
Analytical Challenges in Next-Generation Packaging/AssemblyDias, R. / Goyal, D. / Tandon, S. / Samuelson, G. et al. | 1998
- 598
-
Trends in Nondestructive Imaging of IC PackagesMoore, T. M. / Hartfield, C. D. et al. | 1998
- 607
-
Interconnection Continuity Test for Packaged Functional ModulesObrzut, J. et al. | 1998
- 611
-
Scanning Acoustic Microscopy Stress Measurements in Electronic PackagingDrescher-Krasicka, E. / Moore, T. M. / Hartfield, C. D. et al. | 1998
- 617
-
One- and Two-Dimensional Dopant/Carrier Profiling for ULSIVandervorst, W. / Clarysse, T. / De Wolf, P. / Trenkler, T. / Hantschel, T. / Stephenson, R. / Janssens, T. et al. | 1998
- 641
-
Overview of Optical Microscopy and Optical MicrospectroscopyAger, J. W. et al. | 1998
- 653
-
Advanced SEM ImagingJoy, D. C. / Newbury, D. E. et al. | 1998
- 667
-
Transmission Electron Microscopy: A Critical Analytical Tool for ULSI TechnologyVenables, D. / Susnitzky, D. W. / Mardinly, A. J. et al. | 1998
- 677
-
Microscopy and Spectroscopy Characterization of Small Defects on 200 mm WafersBrundle, C. R. / Uritsky, Y. / Kinney, P. / Huber, W. / Green, A. et al. | 1998
- 691
-
X-Ray Microscopy: An Emerging Technique for Semiconductor Microstructure CharacterizationPadmore, H. A. et al. | 1998
- 696
-
Analysis of Molecular Adsorbates on Si Surfaces with Thermal Desorption SpectroscopyYabumoto, N. et al. | 1998
- 703
-
Wet Chemical Analysis for the Semiconductor Industry: A Total ViewBalazs, M. K. et al. | 1998
- 715
-
Re-examination of 2D Dopant Profiling NeedsDuane, M. et al. | 1998
- 720
-
Two Dimensional Dopant Diffusion Study by Scanning Capacitance Microscopy and TSUPREM IV Process SimulationKim, J. / McMurray, J. S. / Williams, C. C. / Slinkman, J. et al. | 1998
- 725
-
Comparison of Measured and Modeled Scanning Capacitance Microscopy Images Across p-n JunctionsKopanski, J. J. / Marchiando, J. F. / Albers, J. / Rennex, B. G. et al. | 1998
- 731
-
Inverse Modeling Applied to Scanning Capacitance Microscopy for Improved Spatial Resolution and AccuracyMcMurray, J. S. / Williams, C. C. et al. | 1998
- 736
-
Silicon Surface Preparation for Two-Dimensional Dopant CharacterizationUkraintsev, V. A. / Potts, F. R. / Wallace, R. M. / Magel, L. K. / Edwards, H. / Chang, M.-C. et al. | 1998
- 741
-
Dopant Characterization Round-Robin Study Performed on Two-Dimensional Test Structures Fabricated at Texas InstrumentsUkraintsev, V. A. / List, R. S. / Chang, M.-C. / Edwards, H. / Machala, C. F. / Martin, R. S. / Zavyalov, V. V. / McMurray, J. S. / Williams, C. C. / De Wolf, P. et al. | 1998
- 747
-
Application of Scanning Probe Microscopy Nano-Indentation Towards Nanomechanical Characterization of Polymer FilmsXu, J. / Hooker, J. / Adhihetty, I. / Padmanabhan, P. / Remmel, T. / Chen, W. et al. | 1998
- 753
-
Surface and Tip Characterization for Quantitative Two-Dimensional Dopant Profiling by Scanning Capacitance MicroscopyZavyalov, V. V. / McMurray, J. S. / Williams, C. C. et al. | 1998
- 757
-
Ultra-Shallow Junction Measurements: A Review of SIMS Approaches for Annealed and Processed WafersMount, G. R. / Smith, S. P. / Hitzman, C. J. / Chia, V. K. F. / Magee, C. W. et al. | 1998
- 766
-
Two-Dimensional Profiling of Ultra-Shallow Implants using SIMSCooke, G. A. / Gibbons, R. / Dowsett, M. G. et al. | 1998
- 771
-
Is Ultra Shallow Analysis Possible Using SIMS?Chu, D. P. / Dowsett, M. G. / Ormsby, T. J. / Cooke, G. A. et al. | 1998
- 777
-
Ultra-Shallow Junction Depth Profile Analysis Using TOF-SIMS and TXRFIltgen, K. / MacDonald, B. / Brox, O. / Benninghoven, A. / Weiss, C. / Hossain, T. / Zschech, E. et al. | 1998
- 782
-
Fast Low Energy SIMS Depth Profiling for ULSI ApplicationsPatel, S. B. / Maul, J. L. et al. | 1998
- 786
-
Resonance Ionization Mass Spectrometry-Applications to Surface Analyses and Depth Profiles of SemiconductorsWhitaker, T. J. / Wiley, K. F. / Garrett, W. R. / Arlinghaus, H. F. et al. | 1998
- 791
-
Identification, Simulation, and Avoidance of Artifacts in Ultra-Shallow Depth Profiling by Secondary Ion Mass SpectrometryWittmaack, K. / Patel, S. B. / Corcoran, S. F. et al. | 1998
- 799
-
High-Resolution Microcalorimeter Energy-Dispersive Spectrometer for X-Ray Microanalysis and Particle AnalysisWollman, D. A. / Hilton, G. C. / Irwin, K. D. / Dulcie, L. L. / Bergren, N. F. / Newbury, D. E. / Woo, K.-S. / Liu, B. Y. H. / Diebold, A. C. / Martinis, J. M. et al. | 1998
- 805
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Tungsten In-Film Defect CharacterizationUritsky, Y. / Ghanayem, S. / Rana, V. / Savoy, R. / Yang, S. / Brundle, C. R. et al. | 1998
- 810
-
Analysis of Submicron Defects Using an SEM-Auger Defect Review ToolChilds, K. D. / Watson, D. G. / Paul, D. F. / Clough, S. P. et al. | 1998
- 815
-
Polarized Light Scattering and Its Application to Microroughness, Particle, and Defect DetectionGermer, T. A. et al. | 1998
- 819
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Accurate Size Measurement of Monosize Calibration Spheres by Differential Mobility AnalysisMulholland, G. W. / Fernandez, M. et al. | 1998
- 824
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One Step Automated Unpatterned Wafer Defect Detection and ClassificationDou, L. / Kesler, D. / Bruno, W. / Monjak, C. / Hunt, J. et al. | 1998
- 829
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Mechanical Characterization of Thin FilmsRead, D. T. et al. | 1998
- 835
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High Sensitivity Technique for Measurement of Thin Film Out-of-Plane ExpansionSnyder, C. R. / Mopsik, F. I. et al. | 1998
- 839
-
The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards with a Calibrated AFM at NISTTsai, V. W. / Vorburger, T. / Dixson, R. / Fu, J. / Koning, R. / Silver, R. / Williams, E. D. et al. | 1998
- 843
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TIP Characterization for Scanning Probe Microscope Width MetrologyDongmo, S. / Villarrubia, J. S. / Jones, S. N. / Renegar, T. B. / Postek, M. T. / Song, J. F. et al. | 1998
- 849
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Crystallographic Characterization of Interconnects by Orientation Mapping in the SEMKalnas, C. E. / Keller, R. R. / Field, D. P. et al. | 1998
- 854
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HRTEM as a Metrology Tool in ULSI ProcessingKaushik, V. S. / Prabhu, L. / Anderson, A. / Conner, J. et al. | 1998
- 857
-
Transmission Electron Microscopy Investigation of Titanium Silicide Thin FilmsMyers, A. F. / Steel, E. B. / Struck, L. M. / Liu, H. I. / Burns, J. A. et al. | 1998
- 863
-
Focused Ion Beam Preparation for Cross-Sectional Transmission Electron Microscopy Investigation of the Top Surface of Unpassivated or Partially Processed ULSI DevicesBender, H. / Van Marcke, P. / Drijbooms, C. / Roussel, P. et al. | 1998
- 868
-
Plan View TEM Sample Preparation Using the Focused Ion Beam Lift-Out TechniqueStevie, F. A. / Irwin, R. B. / Shofner, T. L. / Brown, S. R. / Drown, J. L. / Giannuzzi, L. A. et al. | 1998
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X-Ray Photoemission Electron Microscopy for the Study of Semiconductor MaterialsAnders, S. / Stammler, T. / Padmore, H. A. / Terminello, L. J. / Jankowski, A. F. / Stohr, J. / Diaz, J. / Cossy-Favre, A. / Singh, S. et al. | 1998
- 879
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Neutron Reflectometry for Interfacial Materials CharacterizationLin, E. K. / Pochan, D. J. / Kolb, R. / Wu, W.-L. / Satija, S. K. et al. | 1998
- 883
-
Recent Developments in Neutron Depth Profiling at NISTLamaze, G. P. / Chen-Mayer, H. H. / Langland, J. K. et al. | 1998
- 887
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The NIST Surface Analysis Data CenterPowell, C. J. / Rumble, J. R. / Blakeslee, D. M. / Dal-Favero, M. E. / Jablonski, A. / Tougaard, S. et al. | 1998
- 892
-
ULSI Technology and Materials: Quantitative Answers by Combined Mass Spectrometry Surface TechniquesBersani, M. / Fedrizzi, M. / Sbetti, M. / Anderle, M. et al. | 1998
- 897
-
Wafer and Bulk High-Purity Silicon Trace Element Analysis at the Texas A&M University Nuclear Science CenterVan Dalsem, D. J. et al. | 1998
- 901
-
Prospects for Single Atom Sensitivity Measurements of Dopant Levels in SiliconVanfleet, R. R. / Robertson, M. / McKay, M. / Silcox, J. et al. | 1998
- 907
-
Novel Analytical Technique for On-Line Monitoring of Trace Heavy Metals in Corrosive ChemicalsTsai, S. / Tan, S. H. / Flannery, A. F. / Storment, C. W. / Kovacs, G. T. A. et al. | 1998
- 913
-
NSOMS Characterization of Semiconductors and Related MaterialsLiu, R. / Cave, N. / Carrejo, J. / Chen, W. / Lee, T.-C. / Remmel, T. et al. | 1998
- 918
-
A Microcontamination Model for Rotating Disk Chemical Vapor Deposition ReactorsDavis, R. W. / Moore, E. F. / Burgess, D. R. / Zachariah, M. R. et al. | 1998
- 923
-
Properties of Process Gases Determined Accurately with Acoustic TechniquesHurly, J. J. et al. | 1998
- 928
-
X-Ray Metrology for ULSI StructuresBowen, D. K. / Matney, K. M. / Wormington, M. et al. | 1998
- 933
-
Flow Measurements in Semiconductor Processing; New Advances in Measurement TechnologyTison, S. A. / Calabrese, A. M. et al. | 1998
- 937
-
A Self-Controlled Microcontrolled MicrovalveRich, C. A. / Wise, K. D. et al. | 1998
- 943
-
X-Ray Photoelectron Spectroscopy, Depth Profiling, and Elemental Imaging of Metal/Polyimide Interfaces of High Density Interconnect Packages Subjected to Temperature and HumidityJung, D. R. / Ibidunni, B. / Ashraf, M. et al. | 1998