Simpler attenuated phase-shifting mask [4000-127] (Englisch)
- Neue Suche nach: Zhang, J.
- Neue Suche nach: Feng, B.
- Neue Suche nach: Hou, D.
- Neue Suche nach: Zhou, C.
- Neue Suche nach: Yao, H.
- Neue Suche nach: Guo, Y.
- Neue Suche nach: Chen, F.
- Neue Suche nach: Sun, F.
- Neue Suche nach: Su, P.
- Neue Suche nach: SPIE
- Neue Suche nach: Zhang, J.
- Neue Suche nach: Feng, B.
- Neue Suche nach: Hou, D.
- Neue Suche nach: Zhou, C.
- Neue Suche nach: Yao, H.
- Neue Suche nach: Guo, Y.
- Neue Suche nach: Chen, F.
- Neue Suche nach: Sun, F.
- Neue Suche nach: Su, P.
- Neue Suche nach: Progler, C. i.
- Neue Suche nach: SPIE
In:
Optical microlithography
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1175-1178
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2000
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Simpler attenuated phase-shifting mask [4000-127]
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Beteiligte:
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Kongress:Conference; 13th, Optical microlithography ; 2000 ; Santa Clara, CA
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Erschienen in:Optical microlithography ; 1175-1178PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING ; 4000 ; 1175-1178
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsdatum:01.01.2000
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Format / Umfang:4 pages
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Anmerkungen:held in two parts
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2
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Review of photoresist-based lens evaluation methodsKirk, Joseph P. et al. | 2000
- 2
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Review of photoresist-based lens evaluation methods (Invited Paper) [4000-01]Kirk, J. P. / SPIE et al. | 2000
- 9
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Impact of high-order aberrations on the performance of the aberration monitorDirksen, Peter / Juffermans, Casper A. H. / Engelen, Andre / De Bisschop, Peter / Muellerke, Henning et al. | 2000
- 9
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Impact of high-order aberrations on the performance of the aberration monitor [4000-02]Dirksen, P. / Juffermans, C. A. / Engelen, A. / De Bisschop, P. / Muellerke, H. / SPIE et al. | 2000
- 18
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In-situ measurement of lens aberrationsFarrar, Nigel R. / Smith, Adlai H. / Busath, Daniel R. / Taitano, Dennis et al. | 2000
- 18
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In-situ measurement of lens aberrations [4000-03]Farrar, N. R. / Smith, A. H. / Busath, D. R. / Taitano, D. / SPIE et al. | 2000
- 30
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Measurement of lens aberration by using in-situ interferometer and classification of lens for correct applicationSeong, Nakgeuon / Yeo, Gisung / Cho, Hanku / Moon, Joo-Tae et al. | 2000
- 30
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Measurement of lens aberration by using in-situ interferometer and classification of lens for correct application [4000-04]Seong, N. / Yeo, G. / Cho, H. / Moon, J. / SPIE et al. | 2000
- 40
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Zernike coefficients: are they really enough?Progler, Christopher J. / Wong, Alfred K. K. et al. | 2000
- 40
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Zernike coefficients: are they really enough? [4000-05]Progler, C. J. / Wong, A. K. / SPIE et al. | 2000
- 54
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Effect of real masks on wafer patterning [4000-06]Spence, C. A. / Subramanian, R. / Teng, D. / Gallardo, E. / SPIE et al. | 2000
- 54
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Effect of real masks on wafer patterningSpence, Chris A. / Subramanian, Ramkumar / Teng, David / Gallardo, Ernesto et al. | 2000
- 63
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Lithographic comparison of assist feature design strategies [4000-07]Mansfield, S. M. / Liebmann, L. W. / Molless, A. F. / Wong, A. K. / SPIE et al. | 2000
- 63
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Lithographic comparison of assist feature design strategiesMansfield, Scott M. / Liebmann, Lars W. / Molless, Antoinette F. / Wong, Alfred K. K. et al. | 2000
- 77
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Analytical description of antiscattering and scattering bar assist featuresPetersen, John S. et al. | 2000
- 77
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Analytical description of antiscattering and scattering bar assist features [4000-08]Petersen, J. S. / SPIE et al. | 2000
- 90
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OPC methodology and implementation to prototyping of small SRAM cells of 0.18-μm node logic gate levelsHe, Qizhi / Chang, Mi-Chang / Palmer, Shane R. / Sadra, Kayvan et al. | 2000
- 90
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OPC methodology and implementation to prototyping of small SRAM cells of 0.18-mum node logic gate levels [4000-09]He, Q. / Chang, M.-C. / Palme, S. R. / Sadra, K. / SPIE et al. | 2000
- 99
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0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masksChen, Yung-Tin / Lin, Chia-Hui / Lin, Hua Tai / Hsieh, Hung-Chang / Yu, Shinn Sheng / Yen, Anthony et al. | 2000
- 99
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0.13-mum optical lithography for random logic devices using 248-nm attenuated phase-shifting masks [4000-10]Chen, Y. T. / Lin, C. H. / Lin, H. T. / Hsieh, H. C. / Yu, S. S. / Yen, A. / SPIE et al. | 2000
- 112
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Alt-PSM for 0.10-μm and 0.13-μm polypatterningSchenker, Richard E. / Kirchauer, Heinrich / Stivers, Alan R. / Tejnil, Edita et al. | 2000
- 112
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Alt-PSM for 0.10-mum and 0.13-mum polypatterning [4000-11]Schenker, R. E. / Kirchauer, H. / Stivers, A. R. / Tejnil, E. / SPIE et al. | 2000
- 121
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Method of expanding process window for the double exposure technique with alt-PSMsKikuchi, Koji / Ohnuma, Hidetoshi / Kawahira, Hiroichi et al. | 2000
- 121
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Method of expanding process window for the double exposure technique with alt-PSMs [4000-12]Kikuchi, K. / Ohnuma, H. / Kawahira, H. / SPIE et al. | 2000
- 132
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Process capability analysis of DUV alternating PSM and DUV attenuated PSM lithography for 100-nm gate fabrication [4000-13]Kim, K. / Mason, M. E. / Randall, J. N. / Kim, W. D. / SPIE et al. | 2000
- 132
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Process capability analysis of DUV alternating PSM and DUV attenuated PSM lithography for 100-nm gate fabricationKim, Keeho / Mason, Mark E. / Randall, John N. / Kim, Won D. et al. | 2000
- 149
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0.3-μm pitch random interconnect patterning with node connection phase-shifting mask: experiments and simulationsFukuda, Hiroshi / Hotta, Shoji et al. | 2000
- 149
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0.3-mum pitch random interconnect patterning with node connection phase-shifting mask: experiments and simulations [4000-32]Fukuda, H. / Hotta, S. / SPIE et al. | 2000
- 160
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Phase aware proximity correction for advanced masksToublan, Olivier / Sahouria, Emile Y. / Cobb, Nicolas B. / Do, Thuy / Donnelly, Tom / Granik, Yuri / Schellenberg, Franklin M. / Schiavone, Patrick et al. | 2000
- 160
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Phase aware proximity correction for advanced masks [4000-15]Toublan, O. / Sahouria, E. Y. / Cobb, N. B. / Do, T. / Donnelly, T. / Granik, Y. / Schellenberg, F. M. / Schiavone, P. / SPIE et al. | 2000
- 172
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Optical lithography into the millennium: sensitivity to aberrations, vibration, and polarizationFlagello, Donis G. / Mulkens, Jan / Wagner, Christian et al. | 2000
- 172
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Optical lithography into the millennium: sensitivity to aberrations, vibration, and polarization [4000-16]Flagello, D. G. / Mulkens, J. / Wagner, C. / SPIE et al. | 2000
- 184
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Characterization of linewidth variation [4000-17]Wong, A. K. / Molless, A. F. / Brunner, T. A. / Coker, E. / Fair, R. H. / Mack, G. L. / Mansfield, S. M. / SPIE et al. | 2000
- 184
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Characterization of linewidth variationWong, Alfred K. K. / Molless, Antoinette F. / Brunner, Timothy A. / Coker, Eric / Fair, Robert H. / Mack, George L. / Mansfield, Scott M. et al. | 2000
- 192
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KrF lithography for 130 nm [4000-18]Finders, J. / van Schoot, J. B. / Vanoppen, P. / Dusa, M. V. / Socha, R. J. / Vandenberghe, G. / Ronse, K. / SPIE et al. | 2000
- 192
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KrF lithography for 130 nmFinders, Jo / van Schoot, Jan B. / Vanoppen, Peter / Dusa, Mircea V. / Socha, Robert J. / Vandenberghe, Geert / Ronse, Kurt G. et al. | 2000
- 206
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Impact of optical enhancement techniques on the mask error enhancement function (MEEF)Plat, Marina V. / Nguyen, Khanh B. / Spence, Chris A. / Lyons, Christopher F. / Wilkison, Amada et al. | 2000
- 206
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Impact of optical enhancement techniques on the mask error enhancement function (MEEF) [4000-19]Plat, M. V. / Nguyen, K. B. / Spence, C. A. / Lyons, C. F. / Wilkison, A. / SPIE et al. | 2000
- 215
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Analytic approach to understanding the impact of mask errors on optical lithographyMack, Chris A. et al. | 2000
- 215
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Analytic approach to understanding the impact of mask errors on optical lithography [4000-20]Mack, C. A. / SPIE et al. | 2000
- 228
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Modeling oblique incidence effects in photomasks [4000-21]Pistor, T. V. / Neureuther, A. R. / Socha, R. J. / SPIE et al. | 2000
- 228
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Modeling oblique incidence effects in photomasksPistor, Thomas V. / Neureuther, Andrew R. / Socha, Robert J. et al. | 2000
- 240
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IDEAL double exposure method for polylevel structures [4000-22]Romeo, C. / Canestrari, P. / Fiorino, A. / Hasegawa, M. / Saitoh, K. / Suzuki, A. / SPIE et al. | 2000
- 240
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IDEAL double exposure method for polylevel structuresRomeo, Carmelo / Canestrari, Paolo / Fiorino, Antonio / Hasegawa, Masanobu / Saitoh, Kenji / Suzuki, Akiyoshi et al. | 2000
- 252
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Spatial frequency filtering in the pellicle planeSmith, Bruce W. / Kang, Hoyoung et al. | 2000
- 252
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Spatial frequency filtering in the pellicle plane [4000-23]Smith, B. W. / Kang, H. / SPIE et al. | 2000
- 266
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High-density lithography using attenuated phase-shift mask and negative resist [4000-24]Pau, S. / Cirelli, R. A. / Bolan, K. J. / Timko, A. G. / Frackoviak, J. / Watson, G. P. / Trimble, L. E. / Blatchford, J. W. / Nalamasu, O. / SPIE et al. | 2000
- 266
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High-density lithography using attenuated phase-shift mask and negative resistPau, Stanley / Cirelli, Raymond A. / Bolan, Kevin J. / Timko, Allen G. / Frackoviak, John / Watson, Pat G. / Trimble, Lee E. / Blatchford, James W. / Nalamasu, Omkaram et al. | 2000
- 271
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Customized illumination aperture filter for low k~1 photolithography process [4000-25]Gau, T.-S. / Liu, R.-G. / Chen, C.-K. / Lai, C.-M. / Liang, F.-J. / Hsia, C. C. / SPIE et al. | 2000
- 271
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Customized illumination aperture filter for low k1photolithography processGau, Tsai-Sheng / Liu, Ru-Gun / Chen, Chun-Kuang / Lai, Chih-Ming / Liang, Fu-Jye / Hsia, Chin C. et al. | 2000
- 283
-
Patterning 220-nm pitch DRAM patterns by using double mask exposureNam, Dongseok / Seong, Nakgeuon / Cho, Hanku / Moon, Joo-Tae / Lee, Sangin et al. | 2000
- 283
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Patterning 220-nm pitch DRAM patterns by using double mask exposure [4000-26]Nam, D. / Seong, N. / Cho, H. / Moon, J. / Lee, S. / SPIE et al. | 2000
- 294
-
Understanding lens aberration and influences to lithographic imaging [4000-27]Smith, B. W. / Schlief, R. E. / SPIE et al. | 2000
- 294
-
Understanding lens aberration and influences to lithographic imagingSmith, Bruce W. / Schlief, Ralph E. et al. | 2000
- 307
-
Pattern asymmetry correction using assist patternsRyoo, Manhyoung / Nam, Dongseok / Cho, Hanku / Moon, Joo-Tae / Lee, Sangin et al. | 2000
- 307
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Pattern asymmetry correction using assist patterns [4000-28]Ryoo, M. / Nam, D. / Cho, H. / Moon, J. / Lee, S. / SPIE et al. | 2000
- 315
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Interaction of pattern orientation and lens quality on CD and overlay errors [4000-29]Bukofsky, S. J. / Progler, C. J. / SPIE et al. | 2000
- 315
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Interaction of pattern orientation and lens quality on CD and overlay errorsBukofsky, Scott J. / Progler, Christopher J. et al. | 2000
- 326
-
Practical optical-proximity-correction approach by considering interlayer overlap [4000-30]Choi, B.-I. / Khoh, A. / SPIE et al. | 2000
- 326
-
Practical optical-proximity-correction approach by considering interlayer overlapChoi, Byoung-Il / Khoh, Andrew et al. | 2000
- 335
-
Process performance comparisons on 300-mm i-line steppers, DUV stepper, and DUV scannersSchedel, Thorsten / Charles, Alain B. / Ganz, Dietmar / Hornig, Steffen R. / Hraschan, Guenther / Koestler, Wolfram / Maltabes, John G. / Mautz, Karl E. / Metzdorf, Thomas / Otto, Ralf et al. | 2000
- 335
-
Process performance comparisons on 300-mm i-line steppers, DUV stepper, and DUV scanners [4000-31]Schedel, T. / Charles, A. B. / Ganz, D. / Hornig, S. R. / Hraschan, G. / Kostler, W. / Maltabes, J. G. / Mautz, K. F. / Metzdorf, T. / Otto, R. et al. | 2000
- 344
-
Advanced technology for extending optical lithography [4000-53]Wagner, C. / Kaiser, W. M. / Mulkens, J. / Flagello, D. G. / SPIE et al. | 2000
- 344
-
Advanced technology for extending optical lithographyWagner, Christian / Kaiser, Winfried M. / Mulkens, Jan / Flagello, Donis G. et al. | 2000
- 358
-
Extension of KrF lithography to sub-50-nm pattern formationNakao, Shuji / Itoh, Jiroh / Nakae, Akihiro / Kanai, Itaru / Saitoh, Takayiki / Matsubara, Hirosi / Tsujita, Kouichirou / Arimoto, Ichiriou / Wakamiya, Wataru et al. | 2000
- 358
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Extension of KrF lithography to sub-50-nm pattern formation [4000-33]Nakao, S. / Itoh, J. / Nakae, A. / Kanai, I. / Saitoh, T. / Matsubara, H. / Tsujita, K. / Arimoto, I. / Wakamiya, W. / SPIE et al. | 2000
- 366
-
Phase-mask effects by dark-field lithography [4000-34]White, D. L. / Cirelli, R. A. / Spector, S. J. / Blakey, M. I. / Wood, O. R. / SPIE et al. | 2000
- 366
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Phase-mask effects by dark-field lithographyWhite, Donald L. / Cirelli, Raymond A. / Spector, Steven J. / Blakey, Myrtle I. / Wood, Obert R. et al. | 2000
- 373
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Limits of optical lithographyMaenhoudt, Mireille / Verhaegen, Staf / Ronse, Kurt G. / Zandbergen, Peter / Muzio, Edward G. et al. | 2000
- 373
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Limits of optical lithography [4000-35]Maenhoudt, M. / Verhaegen, S. / Ronse, K. / Zandberger, P. / Muzio, E. G. / SPIE et al. | 2000
- 388
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Application of chromeless phase-shift masks to sub-100-nm SOI CMOS transistor fabricationFritze, Michael / Burns, James M. / Wyatt, Peter W. / Astolfi, David K. / Forte, T. / Yost, Donna / Davis, Paul / Curtis, Andrew V. / Preble, Douglas M. / Cann, Susan G. et al. | 2000
- 388
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Application of chromeless phase-shift masks to sub-100-nm SOI CMOS transistor fabrication [4000-36]Fritze, M. / Burns, J. M. / Wyatt, P. W. / Astolfi, D. K. / Forte, T. / Yost, D. / Davis, P. / Curtis, A. V. / Preble, D. M. / Cann, S. G. et al. | 2000
- 410
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Status of ArF lithography for the 130-nm technology node [4000-37]Ronse, K. / Vandenberghe, G. / Jaenen, P. / Delvaux, C. / Vangoidsenhoven, D. / Van Roey, F. / Pollers, I. / Maenhoudt, M. / Goethals, A. M. / Pollentier, I. K. et al. | 2000
- 410
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Status of ArF lithography for the 130-nm technology nodeRonse, Kurt G. / Vandenberghe, Geert / Jaenen, Patrick / Delvaux, Christie / Vangoidsenhoven, Diziana / Van Roey, Frieda / Pollers, Ingrid / Maenhoudt, Mireille / Goethals, Anne-Marie / Pollentier, Ivan K. et al. | 2000
- 423
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Integration considerations for 130-nm device patterning using ArF lithography [4000-38]Okoroanyanwu, U. / Levinson, H. J. / Yang, C.-Y. / Pangrle, S. K. / Schefske, J. A. / Kent, E. / SPIE et al. | 2000
- 423
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Integration considerations for 130-nm device patterning using ArF lithographyOkoroanyanwu, Uzodinma / Levinson, Harry J. / Yang, Chih-Yuh / Pangrle, Suzette K. / Schefske, Jeff A. / Kent, Eric et al. | 2000
- 435
-
Comparison study for sub-0.13-mum lithography between ArF and KrF lithography [4000-39]Kim, S.-K. / Kim, Y.-S. / Kim, J.-S. / Bok, C.-K. / Ham, Y.-M. / Baik, K.-H. / SPIE et al. | 2000
- 435
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Comparison study for sub-0.13-μm lithography between ArF and KrF lithographyKim, Seok-Kyun / Kim, YoungSik / Kim, Jin-Soo / Bok, Cheol-Kyu / Ham, Young-Mog / Baik, Ki-Ho et al. | 2000
- 443
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Feasibility study of an embedded transparent phase-shifting mask in ArF lithographyMatsuo, Takahiro / Ogawa, Tohru / Morimoto, Hiroaki et al. | 2000
- 443
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Feasibility study of an embedded transparent phase-shifting mask in ArF lithography [4000-40]Matsuo, T. / Ogawa, T. / Morimoto, H. / SPIE et al. | 2000
- 452
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Electrical critical dimension metrology for 100-nm linewidths and belowGrenville, Andrew / Coombs, Brian / Hutchinson, John M. / Kuhn, Kelin J. / Miller, David / Troccolo, Patrick M. et al. | 2000
- 452
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Electrical critical dimension metrology for 100-nm linewidths and below [4000-41]Grenville, A. / Coombs, B. / Hutchinson, J. M. / Kuhn, K. J. / Miller, D. / Troccolo, P. M. / SPIE et al. | 2000
- 460
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Issues and nonissues on a 193-nm step-and-scan system in productionSchefske, Jeff A. / Kent, Eric / Okoroanyanwu, Uzodinma / Levinson, Harry J. / Masud, Charles R. / Streefkerk, Bob / Hanzen, Ralph M. / Brueback, Joerg et al. | 2000
- 460
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Issues and nonissues on a 193-nm step-and-scan system in production [4000-42]Schefske, J. A. / Kent, E. / Okoroanyanwu, U. / Levinson, H. J. / Masud, C. R. / Streefkerk, B. / Hanzen, R. / Brueback, J. / SPIE et al. | 2000
- 474
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Experimentation and modeling of organic photocontamination on lithographic optics [4000-43]Kunz, R. R. / Liberman, V. / Downs, D. K. / SPIE et al. | 2000
- 474
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Experimentation and modeling of organic photocontamination on lithographic opticsKunz, Roderick R. / Liberman, Vladimir / Downs, Deanna K. et al. | 2000
- 488
-
Long-term testing of optical components for 157-nm lithography [4000-44]Liberman, V. / Rothschild, M. / Sedlacek, J. H. C. / Uttaro, R. S. / Bates, A. K. / Orvek, K. J. / SPIE et al. | 2000
- 488
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Long-term testing of optical components for 157-nm lithographyLiberman, Vladimir / Rothschild, Mordechai / Sedlacek, Jan H. C. / Uttaro, Ray S. / Bates, Allen K. / Orvek, Kevin J. et al. | 2000
- 496
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Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulsesMorton, Richard G. / Sandstrom, Richard L. / Blumenstock, Gerry M. / Bor, Zsolt / Van Peski, Chris K. et al. | 2000
- 496
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Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses [4000-46]Morton, R. G. / Sandstrom, R. L. / Blumenstock, G. M. / Bor, Z. / Van Peski, C. K. / SPIE et al. | 2000
- 511
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Prospects for long-pulse operation of ArF lasers for 193-nm microlithographyHofmann, Thomas / Johanson, Bruce / Das, Palash P. et al. | 2000
- 511
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Prospects for long-pulse operation of ArF lasers for 193-nm microlithography [4000-47]Hofmann, T. / Johanson, B. / Das, P. P. / SPIE et al. | 2000
- 520
-
Overlay performance in advanced processes [4000-48]Bornebroek, F. / Burghoorn, J. / Greeneich, J. S. / Megens, H. J. / Satriasaputra, D. / Simons, G. / Stalnaker, S. / Koek, B. / SPIE et al. | 2000
- 520
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Overlay performance in advanced processesBornebroek, Frank / Burghoorn, Jaap / Greeneich, James S. / Megens, Henry J. L. / Satriasaputra, Danu / Simons, Geert / Stalnaker, Sunny / Koek, Bert et al. | 2000
- 532
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193-nm step-and-scan lithography equipment [4000-49]Sano, N. / Takahashi, K. / Nakano, H. / Suzuki, A. / SPIE et al. | 2000
- 532
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193-nm step-and-scan lithography equipmentSano, Naoto / Takahashi, Kazuhiro / Nakano, Hitoshi / Suzuki, Akiyoshi et al. | 2000
- 542
-
Advances in 193-nm lithography tools [4000-50]Cote, D. R. / Ahouse, D. / Galburt, D. N. / Harrold, H. / Kreuzer, J. / Nelson, M. / Oskotsky, M. L. / O Connor, G. / Sewell, H. / Williamson, D. M. et al. | 2000
- 542
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Advances in 193-nm lithography toolsCote, Daniel R. / Ahouse, David / Galburt, Daniel N. / Harrold, Hilary G. / Kreuzer, Justin / Nelson, Mike / Oskotsky, Mark L. / O'Connor, Geoffrey / Sewell, Harry / Williamson, David M. et al. | 2000
- 551
-
Aberration averaging using point spread function for scanning projection systemsOoki, Hiroshi / Noda, Tomoya / Matsumoto, Koichi et al. | 2000
- 551
-
Aberration averaging using point spread function for scanning projection systems [4000-51]Ooki, H. / Noda, T. / Matsumoto, K. / SPIE et al. | 2000
- 559
-
Realization of very small aberration projection lenses [4000-52]Yoshihara, T. / Koizumi, R. / Takahashi, K. / Suda, S. / Suzuki, A. / SPIE et al. | 2000
- 559
-
Realization of very small aberration projection lensesYoshihara, Toshiyuki / Koizumi, Ryo / Takahashi, Kazuhiro / Suda, Shigeyuki / Suzuki, Akiyoshi et al. | 2000
- 567
-
Development of 157-nm small-field and mid-field microsteppersMiller, Ron E. / Bischoff, Paul M. / Sumner, Roger C. / Bowler, Stephen W. / Flack, Warren W. / Fong, Galen et al. | 2000
- 567
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Development of 157-nm small-field and mid-field microsteppers [4000-174]Miller, R. E. / Bischoff, P. M. / Sumner, R. C. / Bowler, S. / Flack, W. W. / Fong, G. / SPIE et al. | 2000
- 580
-
Understanding the impact of full-field mask error factor [4000-54]Conley, W. E. / Shi, X. / Hankinson, M. / Dusa, M. V. / Socha, R. J. / Garza, C. / SPIE et al. | 2000
- 580
-
Understanding the impact of full-field mask error factorConley, Will / Shi, Xuelong / Hankinson, Matt / Dusa, Mircea V. / Socha, Robert J. / Garza, Cesar et al. | 2000
- 588
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Impact of MEEF on low k~1 lithography and mask inspection [4000-55]Qian, Q.-D. / SPIE et al. | 2000
- 588
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Impact of MEEF on low k1lithography and mask inspectionQian, Qi-De et al. | 2000
- 594
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Mask error factor impact on the 130-nm nodeRandall, John N. / Baum, Christopher C. / Kim, Keeho / Mason, Mark E. et al. | 2000
- 594
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Mask error factor impact on the 130-nm node [4000-56]Randall, J. N. / Baum, C. C. / Kim, K. / Mason, M. E. / SPIE et al. | 2000
- 602
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Characterization of spatial CD variability, spatial mask-level correction, and improvement of circuit performance [4000-58]Orshansky, M. / Milor, L. / Brodsky, M. / Nguyen, L. / Hill, G. / Peng, Y. / Hu, C. / SPIE et al. | 2000
- 602
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Characterization of spatial CD variability, spatial mask-level correction, and improvement of circuit performanceOrshansky, Michael / Milor, Linda / Brodsky, Michael / Nguyen, Ly / Hill, Gene / Peng, Yeng-Kaung / Hu, Chenming et al. | 2000
- 612
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Validation of repair process for DUV attenuated phase-shift maskPaek, Seung-Weon / Kim, Hee-Bom / Ahn, Chang-Nam / Koo, Young-Mo / Baik, Ki-Ho et al. | 2000
- 612
-
Validation of repair process for DUV attenuated phase-shift mask [4000-59]Paek, S. W. / Kim, H.-B. / Ahn, C.-N. / Koo, Y.-M. / Baik, K.-H. / SPIE et al. | 2000
- 621
-
Predictive and corrective model for bulk heating distortion in photomasksShamoun, Bassam / Trost, David / Chilese, Frank et al. | 2000
- 621
-
Predictive and corrective model for bulk heating distortion in photomasks [4000-61]Shamoun, B. / Trost, D. / Chilese, F. / SPIE et al. | 2000
- 632
-
Pulsed UV laser Raman and fluorescence spectroscopy of large-area fused silica photomask substrates [4000-62]Muhlig, C. / Bark-Zollmann, S. / Grebner, D. / Triebel, W. / SPIE et al. | 2000
- 632
-
Pulsed UV laser Raman and fluorescence spectroscopy of large-area fused silica photomask substratesMuehlig, Christian / Bark-Zollmann, Sylvia / Grebner, Dieter / Triebel, Wolfgang et al. | 2000
- 639
-
Scalable pattern generator data path: for the future [4000-63]Johansson, C. / Ivansen, L. / Thuren, A. / Liden, P. / Bjuggren, M. / SPIE et al. | 2000
- 639
-
Scalable pattern generator data path: for the futureJohansson, Charlotta / Ivansen, Lars / Thuren, Anders / Liden, Per / Bjuggren, Mans et al. | 2000
- 647
-
New pattern generation system based on i-line stepper: photomask repeater [4000-64]Kyoh, S. / Inoue, S. / Higashikawa, I. / Mori, I. / Okumura, K. / Irie, N. / Muramatsu, K. / Magome, N. / SPIE et al. | 2000
- 647
-
New pattern generation system based on i-line stepper: photomask repeaterKyoh, Suigen / Inoue, Soichi / Higashikawa, Iwao / Mori, Ichiro / Okumura, Katsuya / Irie, Nobuyuki / Muramatsu, Koji / Magome, Nobutaka et al. | 2000
- 658
-
Modeling the effects of excimer laser bandwidths on lithographic performance [4000-65]Kroyan, A. / Bendik, J. J. / Semprez, O. / Farrar, N. R. / Rowan, C. G. / Mack, C. A. / SPIE et al. | 2000
- 658
-
Modeling the effects of excimer laser bandwidths on lithographic performanceKroyan, Armen / Bendik, Joseph J. / Semprez, Olivier / Farrar, Nigel R. / Rowan, Christopher G. / Mack, Chris A. et al. | 2000
- 665
-
Exposure latitude analysis for dense line and space patterns by using diffused aerial image modelAhn, Chang-Nam / Kim, Hee-Bom / Baik, Ki-Ho et al. | 2000
- 665
-
Exposure latitude analysis for dense line and space patterns by using diffused aerial image model [4000-66]Ahn, C.-N. / Kim, H.-B. / Baik, K.-H. / SPIE et al. | 2000
- 676
-
Direction-oriented partition of unity finite element method for lithography simulation of the image formation problem in photoresist [4000-67]Chang, Y.-C. / SPIE et al. | 2000
- 676
-
Direction-oriented partition of unity finite element method for lithography simulation of the image formation problem in photoresistChang, Yao-Chang et al. | 2000
- 684
-
Rigorous diffraction analysis for future mask technologyErdmann, Andreas / Friedrich, Christoph M. et al. | 2000
- 684
-
Rigorous diffraction analysis for future mask technology [4000-69]Erdmann, A. / Friedrich, C. / SPIE et al. | 2000
- 695
-
Mask topography effects in low k1lithographyMcCallum, Martin / Gordon, Ronald L. et al. | 2000
- 695
-
Mask topography effects in low k~1 lithography [4000-70]McCallum, M. / Gordon, R. L. / SPIE et al. | 2000
- 701
-
157-nm lithography simulation using a finite-difference time-domain method with oblique incidence in a multilayered medium [4000-71]Yeung, M. S. / Barouch, E. / Martin, C. A. / McClay, J. A. / SPIE et al. | 2000
- 701
-
157-nm lithography simulation using a finite-difference time-domain method with oblique incidence in a multilayered mediumYeung, Michael S. / Barouch, Eytan / Martin, Clifford A. / McClay, James A. et al. | 2000
- 711
-
Analysis of OPC features in binary masks at 193 nm [4000-72]Adam, K. / Neureuther, A. R. / SPIE et al. | 2000
- 711
-
Analysis of OPC features in binary masks at 193 nmAdam, Konstantinos / Neureuther, Andrew R. et al. | 2000
- 723
-
Application of an effective wavelet matrix transform approach for optical lithography simulation: analysis of topological effects of phase-shifting masks [4000-73]Lee, S. G. / Kim, H.-J. / Lee, D.-H. / Lee, J.-U. / SPIE et al. | 2000
- 723
-
Application of an effective wavelet matrix transform approach for optical lithography simulation: analysis of topological effects of phase-shifting masksLee, Seung-Gol / Kim, Hyun-Jun / Lee, Dong-Hoon / Lee, Jong-Ung et al. | 2000
- 734
-
Deducing aerial image behavior from AIMS dataGordon, Ronald L. / Flagello, Donis G. / McCallum, Martin et al. | 2000
- 734
-
Deducing aerial image behavior from AIMS data [4000-74]Gordon, R. L. / Flagello, D. G. / McCallum, M. / SPIE et al. | 2000
- 744
-
Factors affecting pitch bias in lithography simulation [4000-75]Robertson, S. A. / Pavelchek, E. K. / Swible-Keane, C. I. / Bohland, J. F. / Reilly, M. T. / SPIE et al. | 2000
- 744
-
Factors affecting pitch bias in lithography simulationRobertson, Stewart A. / Pavelchek, Edward K. / Swible-Keane, Catherine I. / Bohland, John F. / Reilly, Michael T. et al. | 2000
- 759
-
New Lambda/NA scaling equations for resolution and depth-of-focus [4000-76]Lin, B. J. / SPIE et al. | 2000
- 759
-
New λ/NA scaling equations for resolution and depth-of-focusLin, Burn J. et al. | 2000
- 765
-
Theoretical model describing laser microhole drilling processes for organic polymers [4000-77]Wu, F. / SPIE et al. | 2000
- 765
-
Theoretical model describing laser microhole drilling processes for organic polymersWu, Frank F. et al. | 2000
- 776
-
Dynamic performance of DUV step-and-scan systems and process latitudeKlaassen, Michel / Reuhman, Marian / Loock, Antoine / Rademaker, Mike / Gemen, Jack et al. | 2000
- 776
-
Dynamic performance of DUV step-and-scan systems and process latitude [4000-78]Klaassen, M. / Reuhman, M. / Loock, A. / Rademaker, M. / Gemen, J. / SPIE et al. | 2000
- 785
-
Linewidth uniformity error analysis for step-and-scan systemsZimmerman, John D. / Sumra, Javed / Leong, Y.K. A. / Govil, Pradeep K. / Baxter, Greg H. et al. | 2000
- 785
-
Linewidth uniformity error analysis for step-and-scan systems [4000-79]Zimmerman, J. D. / Sumra, J. / Leong, Y. K. A. / Govil, P. K. / Baxter, G. H. / SPIE et al. | 2000
- 794
-
Implementation of an automated feedback focus control methodology for Nikon (NSR) i-line and DUV steppers and scanners [4000-80]Lalovic, I. / Parry, J. I. / Gwynn, B. / Silsby, C. D. / SPIE et al. | 2000
- 794
-
Implementation of an automated feedback focus control methodology for Nikon (NSR) i-line and DUV steppers and scannersLalovic, Ivan / Parry, Joseph T. / Gwynn, Brett / Silsby, Christopher D. et al. | 2000
- 804
-
Impact of illumination pupil-fill spatial variation on simulated imaging performanceBarrett, Terence C. et al. | 2000
- 804
-
Impact of illumination pupil-fill spatial variation on simulated imaging performance [4000-81]Barrett, T. C. / SPIE et al. | 2000
- 818
-
Improving image control by correcting the lens-heating focus driftCheng, Bwo-Jung / Liu, Hsiang-Chung / Cui, Yuanting / Guo, Jiyou et al. | 2000
- 818
-
Improving image control by correcting the lens-heating focus drift [4000-82]Cheng, B.-J. / Liu, H. / Cui, Y. / Guo, J. / SPIE et al. | 2000
- 827
-
Characterization of leveling modes on i-line stepperWachs, Amir / Cohen, David / Margalit-Ilovich, Ayelet et al. | 2000
- 827
-
Characterization of leveling modes on i-line stepper [4000-83]Wachs, A. / Cohen, D. / Margalit, A. / SPIE et al. | 2000
- 835
-
Self-sustaining dose control system: ways to improve the exposure processKivenzor, Gregory J. et al. | 2000
- 835
-
Self-sustaining dose control system: ways to improve the exposure process [4000-84]Kivenzor, G. J. / SPIE et al. | 2000
- 843
-
Advanced mix-and-match using a high-NA i-line scannerKuijten, Jan P. / Harris, Thomas A. / van der Heijden, Ludo / Witko, David / Cossins, John / Foster, James / Ritchie, Douglas R. et al. | 2000
- 843
-
Advanced mix-and-match using a high-NA i-line scanner [4000-86]Kuijten, J. P. / Harris, T. A. / van der Heijden, L. / Witko, D. / Cossins, J. / Foster, J. / Ritchie, D. R. / SPIE et al. | 2000
- 857
-
Effect of nonlinear errors on 300-mm wafer overlay performance [4000-87]Schmidt, S. / Charles, A. B. / Ganz, D. / Hornig, S. R. / Hraschan, G. / Maltabes, J. G. / Mautz, K. E. / Metzdorf, T. / Otto, R. / Scheurich, J. et al. | 2000
- 857
-
Effect of nonlinear errors on 300-mm wafer overlay performanceSchmidt, Sebastian / Charles, Alain B. / Ganz, Dietmar / Hornig, Steffen R. / Hraschan, Guenther / Maltabes, John G. / Mautz, Karl E. / Metzdorf, Thomas / Otto, Ralf / Scheurich, Jochen et al. | 2000
- 866
-
Continuous Image Writer: a new approach to fast direct writingPaufler, Joerg / Brunn, Stefan / Bolle, Joachim / Koerner, Tim / Baudach, Aenne / Lindner, Reiner et al. | 2000
- 866
-
Continuous Image Writer: a new approach to fast direct writing [4000-88]Paufler, J. / Brunn, S. / Bolle, J. / Korner, T. / Baudach, A. / Lindner, R. / SPIE et al. | 2000
- 874
-
Optical holography used in optical microlithography [4000-89]Feng, B. / Zhang, J. / Hou, D. / Chen, F. / SPIE et al. | 2000
- 874
-
Optical holography used in optical microlithographyFeng, Boru / Zhang, Jin / Hou, Desheng / Chen, Fen et al. | 2000
- 880
-
Across field and across wafer flare: from KrF stepper to ArF scannerTrouiller, Yorick / Luce, Emmanuelle / Barberet, Alexandra / Depre, L. / Schiavone, Patrick et al. | 2000
- 880
-
Across field and across wafer flare: from KrF stepper to ArF scanner [4000-90]Trouiller, Y. / Luce, E. / Barberet, A. / Depre, L. / Schiavone, P. / SPIE et al. | 2000
- 892
-
Determining and reducing the overhead losses in an ASIC-type environment [4000-91]Ames, D. B. / SPIE et al. | 2000
- 892
-
Determining and reducing the overhead losses in an ASIC-type environmentAmes, Dennis B. et al. | 2000
- 896
-
Overlay budget considerations for an all-scanner fab [4000-108]Seltmann, R. / Demmerle, W. / Staples, M. / Minvielle, A. M. / Schulz, B. / Muehle, S. / SPIE et al. | 2000
- 896
-
Overlay budget considerations for an all-scanner fabSeltmann, Rolf / Demmerle, Wolfgang / Staples, Marc / Minvielle, Anna Maria / Schulz, Bernd / Muehle, Sven et al. | 2000
- 905
-
Improvement of CD control and resolution by optimizing inorganic ARC processYamaguchi, Atsumi / Ueno, Atsushi / Tsujita, Kouichirou et al. | 2000
- 905
-
Improvement of CD control and resolution by optimizing inorganic ARC process [4000-93]Yamaguchi, A. / Ueno, A. / Tsujita, K. / SPIE et al. | 2000
- 915
-
Novel polymeric antireflective coating (PARC) for better uniformity control of critical dimensionLinliu, Kung / Kuo, Mai-Rue / Huang, Yi-Ren et al. | 2000
- 915
-
Novel polymeric antireflective coating (PARC) for better uniformity control of critical dimension [4000-94]Linliu, K. / Kuo, M.-R. / Huang, Y.-R. / SPIE et al. | 2000
- 927
-
130-nm KrF lithography for DRAM production with 0.68-NA scanner [4000-95]Kawamura, E. / Nagai, K. / Kanemitsu, H. / Tabata, Y. / Inoue, S. / SPIE et al. | 2000
- 927
-
130-nm KrF lithography for DRAM production with 0.68-NA scannerKawamura, Eiichi / Nagai, Kouichi / Kanemitsu, Hideyuki / Tabata, Yasuko / Inoue, Soichi et al. | 2000
- 935
-
Strategy for optimizing random code lithography patterning in 0.18-μm generation mask ROMChen, Chih-Ping / Lin, Shun-Li / Yang, Ta-Hung et al. | 2000
- 935
-
Strategy for optimizing random code lithography patterning in 0.18-mum generation mask ROM [4000-96]Chen, C. P. A. / Lin, F. / Yang, T. H. / SPIE et al. | 2000
- 942
-
Adjustment of bilayer optical properties and the effect on imaging and etching performance [4000-98]Neisser, M. O. / Biafore, J. J. / Foster, P. / Spaziano, G. / Sarubbi, T. R. / Van Driessche, V. / Grozev, G. / Tzviatkov, P. / SPIE et al. | 2000
- 942
-
Adjustment of bilayer optical properties and the effect on imaging and etching performanceNeisser, Mark O. / Biafore, John J. / Foster, Patrick / Spaziano, Gregory D. / Sarubbi, Thomas R. / Van Driessche, Veerle / Grozev, Grozdan / Tzviatkov, Plamen et al. | 2000
- 952
-
Image shortening and process development in BEOL lithographyDellaGuardia, Ronald / Warner, Dennis J. / Chen, Zheng / Stetter, Martin / Ferguson, Richard A. / McGuire, Anne E. / Badger, Karen D. et al. | 2000
- 952
-
Image shortening and process development in BEOL lithography [4000-100]DellaGuardia, R. / Warner, D. J. / Chen, Z. / Stetter, M. / Ferguson, R. A. / McGuire, A. E. / Badger, K. D. / SPIE et al. | 2000
- 962
-
Precise control of critical dimension shrinkage and enlargement by in-situ polysilicon etchLinliu, Kung / Kuo, Mai-Rue et al. | 2000
- 962
-
Precise control of critical dimension shrinkage and enlargement by in-situ polysilicon etch [4000-101]Linliu, K. / Kuo, M.-R. / SPIE et al. | 2000
- 974
-
Structure end foreshortening: lithography-driven design limitationsSchroeder, Uwe P. / Warner, Dennis J. et al. | 2000
- 974
-
Structure end foreshortening: lithography-driven design limitations [4000-102]Schroeder, U. P. / Warner, D. J. / SPIE et al. | 2000
- 982
-
Novel dual-layer polymeric antireflective coating (PARC) for sub-0.18-μm KrF lithographyLinliu, Kung / Huang, Yi-Ren / Kuo, Mai-Rue et al. | 2000
- 982
-
Novel dual-layer polymeric antireflective coating (PARC) for sub-0.18-mum KrF lithography [4000-103]Linliu, K. / Huang, Y.-R. / Kuo, M.-R. / SPIE et al. | 2000
- 994
-
Lithography process cost considerations for 120-nm groundrulesLiegl, Bernhard / Summerer, Christian et al. | 2000
- 994
-
Lithography process cost considerations for 120-nm groundrules [4000-104]Liegl, B. / Summerer, C. / SPIE et al. | 2000
- 1002
-
Simulation-based proximity correction in high-volume DRAM productionFischer, Werner / Anke, Ines / Schweeger, Giorgio / Thiele, Joerg et al. | 2000
- 1002
-
Simulation-based proximity correction in high-volume DRAM production [4000-85]Fischer, W. / Anke, I. / Schweeger, G. / Thiele, J. / SPIE et al. | 2000
- 1010
-
OPC for logic and embedded applications: the reverse approach [4000-106]Schroeder, U. P. / Mono, T. / SPIE et al. | 2000
- 1010
-
OPC for logic and embedded applications: the reverse approachSchroeder, Uwe P. / Mono, Tobias et al. | 2000
- 1015
-
Automatic parallel optical proximity correction and verification systemWatanabe, Takahiro / Tsujimoto, Eiji / Nakajo, Kyoji / Maeda, Keiji et al. | 2000
- 1015
-
Automatic parallel optical proximity correction and verification system [4000-107]Watanabe, T. / Tsujimoto, E. / Nakajo, K. / Maeda, K. / SPIE et al. | 2000
- 1024
-
Accuracy of diffused aerial image model for full-chip-level optical proximity correction [4000-109]Hong, J.-S. / Kim, H.-B. / Yune, H.-S. / Ahn, C.-N. / Koo, Y.-M. / Baik, K.-H. / SPIE et al. | 2000
- 1024
-
Accuracy of diffused aerial image model for full-chip-level optical proximity correctionHong, Jee-Suk / Kim, Hee-Bom / Yune, Hyoung-Soon / Ahn, Chang-Nam / Koo, Young-Mo / Baik, Ki-Ho et al. | 2000
- 1033
-
Variable-threshold optical proximity correction (OPC) models for high-performance 0.18-μm processLiao, Hongmei / Palmer, Shane R. / Sadra, Kayvan et al. | 2000
- 1033
-
Variable-threshold optical proximity correction (OPC) models for high-performance 0.18-mum process [4000-110]Liao, H. / Palmer, S. R. / Sadra, K. / SPIE et al. | 2000
- 1041
-
Optical proximity correction considering mask manufacturability and its application to 0.25-μm DRAM for enhanced device performancePark, Chul-Hong / Rhie, Sang-Uhk / Choi, Ji-Hyeon / Park, Ji-Soong / Seo, Hyeong-Weon / Kim, Yoo-Hyon / Park, Young-Kwan / Han, Woo-Sung / Lee, Won-Seong / Kong, Jeong-Taek et al. | 2000
- 1041
-
Optical proximity correction considering mask manufacturability and its application to 0.25-mum DRAM for enhanced device performance [4000-111]Park, C.-H. / Rhie, S.-U. / Choi, J.-H. / Park, J.-S. / Seo, H.-W. / Kim, Y.-H. / Park, Y.-K. / Han, W.-S. / Lee, W.-S. / Kong, J.-T. et al. | 2000
- 1047
-
Modified proximity function for OPC in laser direct writing [4000-112]Du, J. / Gao, F. / Zhang, Y. / Guo, Y. / Du, C. / Cui, Z. / SPIE et al. | 2000
- 1047
-
Modified proximity function for OPC in laser direct writingDu, Jinglei / Gao, Fuhua / Zhang, Yixiao / Guo, Yongkang / Du, Chunlei / Cui, Zheng et al. | 2000
- 1053
-
Optimization for full-chip process of 130-nm technology with 248-nm DUV lithographyHam, Young-Mog / Kim, Seok-Kyun / Kim, Sang-Jin / Hur, Cheol / Kim, YoungSik / Baik, Ki-Ho / Kim, Bong-Ho / Ahn, Dong-Jun et al. | 2000
- 1053
-
Optimization for full-chip process of 130-nm technology with 248-nm DUV lithography [4000-113]Ham, Y.-M. / Kim, S.-K. / Kim, S.-J. / Hur, C. / Kim, Y.-S. / Baik, K.-H. / Kim, B.-H. / Ahn, D.-J. / SPIE et al. | 2000
- 1062
-
OPC beyond 0.18 mum: OPC on PSM gates [4000-114]Schellenberg, F. M. / Toublan, O. / Cobb, N. B. / Sahouria, E. Y. / Hughes, G. P. / MacDonald, S. S. / West, C. A. / SPIE et al. | 2000
- 1062
-
OPC beyond 0.18 μm: OPC on PSM gatesSchellenberg, Franklin M. / Toublan, Olivier / Cobb, Nicolas B. / Sahouria, Emile Y. / Hughes, Greg P. / MacDonald, Susan S. / West, Craig A. et al. | 2000
- 1070
-
Effects of off-axis illumination and scattering-bar optical proximity correction on the impact of lens aberration on 130-nm polygate mask: a simulation study [4000-175]Nakagawa, K. H. / Hollerbach, U. / Chen, J. F. / SPIE et al. | 2000
- 1070
-
Effects of off-axis illumination and scattering-bar optical proximity correction on the impact of lens aberration on 130-nm polygate mask: a simulation studyNakagawa, Kent H. / Hollerbach, Uwe / Chen, J. Fung et al. | 2000
- 1079
-
Double exposure technique to reduce line shortening and improve pattern fidelity [4000-115]Kunkel, G. / Bukofsky, S. J. / Butt, S. A. / Lu, Z. G. / SPIE et al. | 2000
- 1079
-
Double exposure technique to reduce line shortening and improve pattern fidelityKunkel, Gerhard / Bukofsky, Scott J. / Butt, Shahid A. / Lu, Zhijian G. et al. | 2000
- 1086
-
Fabrication of small contact using practical pupil filteringKang, Hoyoung / Smith, Bruce W. et al. | 2000
- 1086
-
Fabrication of small contact using practical pupil filtering [4000-116]Kang, H. / Smith, B. W. / SPIE et al. | 2000
- 1092
-
Improved process latitude photolithography 0.18-μm technology using multiple focal planesCallec, Anne-Sophie / Chollet, Jean-Paul E. et al. | 2000
- 1092
-
Improved process latitude photolithography 0.18-mum technology using multiple focal planes [4000-117]Callec, A.-S. / Chollet, J.-P. E. / SPIE et al. | 2000
- 1100
-
Depth-of-focus enhancement of isolated lines by multiple-focus exposure with negative-tone resist processFujimoto, Masashi / Yamazaki, Tamio / Hashimoto, Takeo et al. | 2000
- 1100
-
Depth-of-focus enhancement of isolated lines by multiple-focus exposure with negative-tone resist process [4000-118]Fujimoto, M. / Yamazaki, T. / Hashimoto, T. / SPIE et al. | 2000
- 1111
-
Fabrication of isolated gates by negative-tone process and resolution enhancement technology [4000-120]Morikawa, R. / Uchida, N. / Watanabe, M. / Yabe, S. / Machida, S. / Taguchi, T. / SPIE et al. | 2000
- 1111
-
Fabrication of isolated gates by negative-tone process and resolution enhancement technologyMorikawa, Ryoko / Uchida, Noboru / Watanabe, Minoru / Yabe, Sachiko / Machida, Satoshi / Taguchi, Takashi et al. | 2000
- 1123
-
0.32-μm pitch random line pattern formation by dense dummy pattern and double exposure in KrF wavelengthNakao, Shuji / Tsujita, Kouichirou / Arimoto, Ichiriou / Wakamiya, Wataru et al. | 2000
- 1123
-
0.32-mum pitch random line pattern formation by dense dummy pattern and double exposure in KrF wavelength [4000-121]Nakao, S. / Tsujita, K. / Arimoto, I. / Wakamiya, W. / SPIE et al. | 2000
- 1134
-
Low k1process optimization for i-line lithographyKim, Jeong Won / Huh, Hoon / Han, Sang-Bum et al. | 2000
- 1134
-
Low k~1 process optimization for i-line lithography [4000-122]Kim, J. W. / Huh, H. / Han, S. B. / SPIE et al. | 2000
- 1140
-
Forbidden pitches for 130-nm lithography and below [4000-123]Socha, R. J. / Dusa, M. V. / Capodieci, L. / Finders, J. / Chen, J. F. / Flagello, D. G. / Cummings, K. D. / SPIE et al. | 2000
- 1140
-
Forbidden pitches for 130-nm lithography and belowSocha, Robert J. / Dusa, Mircea V. / Capodieci, Luigi / Finders, Jo / Chen, J. Fung / Flagello, Donis G. / Cummings, Kevin D. et al. | 2000
- 1156
-
Simulation-based method for sidelobe supression [4000-124]Dolainsky, C. / Karakatsanis, P. / Gans, F. / Pforr, R. / Thiele, J. / SPIE et al. | 2000
- 1156
-
Simulation-based method for sidelobe supressionDolainsky, Christoph / Karakatsanis, Paul / Gans, Fritz / Pforr, Rainer / Thiele, Joerg et al. | 2000
- 1163
-
High-transmission attenuated PSM: benefits and limitations through a validation study of 33%, 20%, and 6% transmission masksKachwala, Nishrin / Petersen, John S. / McCallum, Martin et al. | 2000
- 1163
-
High-transmission attenuated PSM: benefits and limitations through a validation study of 33%, 20%, and 6% transmission masks [4000-126]Kachwala, N. / Petersen, J. S. / McCallum, M. / SPIE et al. | 2000
- 1175
-
Simpler attenuated phase-shifting maskZhang, Jin / Feng, Boru / Hou, Desheng / Zhou, Chongxi / Yao, HanMin / Guo, Yongkang / Chen, Fen / Sun, Fang / Su, Ping et al. | 2000
- 1175
-
Simpler attenuated phase-shifting mask [4000-127]Zhang, J. / Feng, B. / Hou, D. / Zhou, C. / Yao, H. / Guo, Y. / Chen, F. / Sun, F. / Su, P. / SPIE et al. | 2000
- 1179
-
Application of attenuated phase-shift masks to sub-0.18-mum logic patterns [4000-128]Fritze, M. / Wyatt, P. W. / Astolfi, D. K. / Davis, P. / Curtis, A. V. / Preble, D. M. / Cann, S. G. / Denault, S. / Chan, D. / Shaw, J. C. et al. | 2000
- 1179
-
Application of attenuated phase-shift masks to sub-0.18-μm logic patternsFritze, Michael / Wyatt, Peter W. / Astolfi, David K. / Davis, Paul / Curtis, Andrew V. / Preble, Douglas M. / Cann, Susan G. / Denault, Sandy / Chan, David Y. / Shaw, Joe C. et al. | 2000
- 1193
-
Integration of attenuated phase-shift mask to 0.13-mum technology contact level masking process [4000-129]Choo, L. C. / Park, O. / Sack, M. J. / Tam, S. / SPIE et al. | 2000
- 1193
-
Integration of attenuated phase-shift mask to 0.13-μm technology contact level masking processChoo, Lay C. / Park, O'Seo / Sack, Michael J. / Tam, Siu Chung et al. | 2000
- 1203
-
Practical software design and experimental research of attenuated phase-shifting masks [4000-130]Zhou, C. / Feng, B. / Hou, D. / Zhang, J. / SPIE et al. | 2000
- 1203
-
Practical software design and experimental research of attenuated phase-shifting masksZhou, Chongxi / Feng, Boru / Hou, Desheng / Zhang, Jin et al. | 2000
- 1209
-
Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masksReilly, Michael T. / Parker, Colin R. / Kvam, Karen / Socha, Robert J. / Dusa, Mircea V. et al. | 2000
- 1209
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Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masks [4000-132]Reilly, M. T. / Parker, C. / Kvam, K. / Socha, R. J. / Dusa, M. V. / SPIE et al. | 2000
- 1223
-
Gauging the performance of an in-situ interferometerTerry, Mark / Smith, Adlai H. / Rebitz, Ken et al. | 2000
- 1223
-
Gauging the performance of an in-situ interferometer [4000-134]Terry, M. / Smith, A. H. / Rebitz, K. / SPIE et al. | 2000
- 1237
-
Sensitivity of coma monitors to resist processesSummerer, Christian / Lu, Zhijian G. et al. | 2000
- 1237
-
Sensitivity of coma monitors to resist processes [4000-135]Summerer, C. / Lu, Z. G. / SPIE et al. | 2000
- 1245
-
Aberrations of steppers using phase-shifting point diffraction interferometryVenkataraman, Parthasarathy / Smith, Bruce W. et al. | 2000
- 1245
-
Aberrations of steppers using phase-shifting point diffraction interferometry [4000-136]Venkataraman, P. / Smith, B. W. / SPIE et al. | 2000
- 1250
-
Degree of patterning performance (DOPP) at low K lithographyYim, Donggyu / Lee, Seung-Hyuk / Gil, Myung-Goon / Ham, Young-Mog / Kim, Bong-Ho / Baik, Ki-Ho et al. | 2000
- 1250
-
Degree of patterning performance (DOPP) at low K lithography [4000-137]Yim, D. / Lee, S.-H. / Gil, M.-G. / Ham, Y.-M. / Kim, B.-H. / Baik, K.-H. / SPIE et al. | 2000
- 1260
-
Lens aberration measurement technique using attentuated phase-shifting mask [4000-139]Imai, A. / Hayano, K. / Fukuda, H. / Asai, N. / Hasegawa, N. / SPIE et al. | 2000
- 1260
-
Lens aberration measurement technique using attentuated phase-shifting maskImai, Akira / Hayano, Katsuya / Fukuda, Hiroshi / Asai, Naoko / Hasegawa, Norio et al. | 2000
- 1269
-
Impact of lens aberration on pattern symmetry of DRAM cells [4000-140]Kobayashi, K. / Yao, T. / Yanagishita, Y. / Hanyu, I. / SPIE et al. | 2000
- 1269
-
Impact of lens aberration on pattern symmetry of DRAM cellsKobayashi, Katsuyoshi / Yao, Teruyoshi / Yanagishita, Yuichiro / Hanyu, Isamu et al. | 2000
- 1281
-
Effect of lens aberrations on pattern placement errorHolscher, Richard D. / Baluswamy, Pary et al. | 2000
- 1281
-
Effect of lens aberrations on pattern placement error [4000-141]Holscher, R. D. / Baluswamy, P. / SPIE et al. | 2000
- 1287
-
Basic imaging characteristics of phase-edge lithography and impact of lens aberration on these characteristicsNakao, Shuji / Kanai, Itaru / Tsujita, Kouichirou / Arimoto, Ichiriou / Wakamiya, Wataru et al. | 2000
- 1287
-
Basic imaging characteristics of phase-edge lithography and impact of lens aberration on these characteristics [4000-142]Nakao, S. / Kanai, I. / Tsujita, K. / Arimoto, I. / Wakamiya, W. / SPIE et al. | 2000
- 1299
-
Influence of resist process on the best focus shift due to lens spherical aberrationMatsuura, Seiji / Uchiyama, Takayuki / Tanabe, Hiroyoshi et al. | 2000
- 1299
-
Influence of resist process on the best focus shift due to lens spherical aberration [4000-143]Matsuura, S. / Uchiyama, T. / Tanabe, H. / SPIE et al. | 2000
- 1311
-
Half-lambda imaging with KrF: performance challenges and trade-offs as expected through simulation [4000-176]Slonaker, S. D. / SPIE et al. | 2000
- 1311
-
Half-lambda imaging with KrF: performance challenges and trade-offs as expected through simulationSlonaker, Steve D. et al. | 2000
- 1323
-
Optimizing edge topography of alternating phase-shift masks using rigorous mask modelingFriedrich, Christoph M. / Mader, Leonhard / Erdmann, Andreas / List, Steffen / Gordon, Ronald L. / Kalus, Christian K. / Griesinger, Uwe A. / Pforr, Rainer / Mathuni, Josef / Ruhl, Guenther G. et al. | 2000
- 1323
-
Optimizing edge topography of alternating phase-shift masks using rigorous mask modeling [4000-145]Friedrich, C. / Mader, L. / Erdmann, A. / List, S. / Gordon, R. L. / Kalus, C. K. / Griesinger, U. A. / Pforr, R. / Mathuni, J. / Ruhl, G. G. et al. | 2000
- 1336
-
Understanding the parameters for strong phase-shift mask lithographyTritchkov, Alexander V. / Stirniman, John P. / Mayhew, Jeffrey P. / Rieger, Michael L. et al. | 2000
- 1336
-
Understanding the parameters for strong phase-shift mask lithography [4000-146]Tritchkov, A. V. / Stirniman, J. P. / Mayhew, J. P. / Rieger, M. L. / SPIE et al. | 2000
- 1347
-
Manufacturability of 248-nm phase-shift lithography for 100-nm transistorsMason, Mark E. / Randall, John N. / Kim, Keeho et al. | 2000
- 1347
-
Manufacturability of 248-nm phase-shift lithography for 100-nm transistors [4000-148]Mason, M. E. / Randall, J. N. / Kim, K. / SPIE et al. | 2000
- 1360
-
Precise CD control of 140-nm gate patterns using phase-edge PSMHotta, Shoji / Inoue, Osamu / Fukuda, Hiroshi / Hasegawa, Norio et al. | 2000
- 1360
-
Precise CD control of 140-nm gate patterns using phase-edge PSM [4000-150]Hotta, S. / Inoue, O. / Fukuda, H. / Hasegawa, N. / SPIE et al. | 2000
- 1371
-
Comparison between 2-phase-shifting mask and 3-phase-shifting mask on application of printing low-duty-ratio contact array patterning [4000-151]Hung, K.-C. / Lin, B. S.-M. / Chang, H.-A. / Tseng, A. / Chung, L.-S. / Liu, W.-J. / Wu, D.-Y. / Huang, P. / SPIE et al. | 2000
- 1371
-
Comparison between 2-phase-shifting mask and 3-phase-shifting mask on application of printing low-duty-ratio contact array patterningHung, Kuei-Chun / Lin, Benjamin S. / Chang, Hsien-an / Tseng, Alex / Chung, Lien-Sheng / Liu, WeiJyh / Wu, Der-Yuan / Huang, Peter et al. | 2000
- 1379
-
Integrated phase-shifting software solution for IC design to manufacturing [4000-179]Liu, H.-Y. / Wu, C. / Li, X. / SPIE et al. | 2000
- 1379
-
Integrated phase-shifting software solution for IC design to manufacturingLiu, Hua-Yu / Wu, Clive / Li, Xiaoyang et al. | 2000
- 1383
-
Al2O3coatings for 193 nm: a nonlinearly absorbing materialApel, Oliver / Mann, Klaus R. et al. | 2000
- 1383
-
Al~2O~3 coatings for 193 nm: a nonlinearly absorbing material [4000-152]Apel, O. / Mann, K. R. / SPIE et al. | 2000
- 1390
-
High-repetition-rate ultranarrow-bandwidth 193-nm excimer lasers for DUV lithography [4000-153]Stamm, U. / Patzel, R. / Bragin, I. / Kleinschmidt, J. / Lokai, P. / Osmanov, R. / Schroder, T. / Sprenger, M. / Zschocke, W. / SPIE et al. | 2000
- 1390
-
High-repetition-rate ultranarrow-bandwidth 193-nm excimer lasers for DUV lithographyStamm, Uwe / Paetzel, Rainer / Bragin, Igor / Kleinschmidt, Juergen / Lokai, Peter / Osmanov, Rustem / Schroeder, Thomas / Sprenger, Martin / Zschocke, Wolfgang et al. | 2000
- 1397
-
High-repetition-rate ArF excimer laser for 193-nm lithographyKakizaki, Kouji / Saito, Takashi / Mitsuhashi, Ken-ichi / Arai, Motohiro / Tada, Akifumi / Kasahara, Shinji / Igarashi, Tatsushi / Hotta, Kazuaki et al. | 2000
- 1397
-
High-repetition-rate ArF excimer laser for 193-nm lithography [4000-154]Kakizaki, K. / Saito, T. / Mitsuhashi, K. / Arai, M. / Tada, A. / Kasahara, S. / Igarashi, T. / Hotta, K. / SPIE et al. | 2000
- 1405
-
Laser spectrum line shape metrology at 193 nm [4000-155]Ershov, A. I. / Padmabandu, G. G. / Tyler, J. D. / Das, P. P. / SPIE et al. | 2000
- 1405
-
Laser spectrum line shape metrology at 193 nmErshov, Alexander I. / Padmabandu, Gunasiri G. / Tyler, Jeremy D. / Das, Palash P. et al. | 2000
- 1418
-
Performance of very high repetition rate ArF lasersHueber, Jean-Marc / Besaucele, Herve / Das, Palash P. / Eis, Rick / Ershov, Alexander I. / Fleurov, Vladimir B. / Gaidarenko, Dmitri / Hofmann, Thomas / Melcher, Paul C. / Partlo, William N. et al. | 2000
- 1418
-
Performance of very high repetition rate ArF lasers [4000-156]Hueber, J.-M. / Besaucele, H. / Das, P. P. / Eis, R. / Ershov, A. I. / Fleurov, V. B. / Gaidarenko, D. / Hofmann, T. / Melcher, P. C. / Partlo, W. N. et al. | 2000
- 1424
-
Output stabilization technology with chemical impurity control on ArF excimer laserSumitani, Akira / Andou, Satoshi / Watanabe, Takehito / Konishi, Masayuki / Egawa, Suguru / Uchino, Ikuo / Ohta, Takeshi / Terashima, Katsutomo / Suzuki, Natsushi / Enami, Tatsuo et al. | 2000
- 1424
-
Output stabilization technology with chemical impurity control on ArF excimer laser [4000-157]Sumitani, A. / Andou, S. / Watanabe, T. / Konishi, M. / Egawa, S. / Uchino, I. / Ohta, T. / Terashima, K. / Suzuki, N. / Enami, T. et al. | 2000
- 1435
-
Highly durable low CoO mass production version of 2-kHz ArF excimer laser for DUV lithography [4000-158]Enami, T. / Wakabayashi, O. / Ishii, K. / Terashima, K. / Itakura, Y. / Watanabe, T. / Ohta, T. / Ohbu, A. / Kubo, H. / Tanaka, H. et al. | 2000
- 1435
-
Highly durable low CoO mass production version of 2-kHz ArF excimer laser for DUV lithographyEnami, Tatsuo / Wakabayashi, Osamu / Ishii, Ken / Terashima, Katsutomo / Itakura, Yasuo / Watanabe, Takayuki / Ohta, Takeshi / Ohbu, Ayako / Kubo, Hirokazu / Tanaka, Hirokazu et al. | 2000
- 1445
-
Prospects for very high repetition rate lasers for microlithography [4000-180]Bragin, I. / Berger, V. / Patzel, R. / Stamm, U. / Targsdorf, A. / Kleinschmidt, J. / Basting, D. / SPIE et al. | 2000
- 1445
-
Prospects for very high repetition rate lasers for microlithographyBragin, Igor / Berger, Vadim / Paetzel, Rainer / Stamm, Uwe / Targsdorf, Andreas / Kleinschmidt, Juergen / Basting, Dirk et al. | 2000
- 1452
-
High-resolution multigrating spectrometer for high-quality deep-UV light source productionSuzuki, Toru / Nakaike, Takanori / Wakabayashi, Osamu / Mizoguchi, Hakaru et al. | 2000
- 1452
-
High-resolution multigrating spectrometer for high-quality deep-UV light source production [4000-159]Suzuki, T. / Nakaike, T. / Wakabayashi, O. / Mizoguchi, H. / SPIE et al. | 2000
- 1461
-
Extending the performance of KrF laser for microlithography by using novel F~2 control technology [4000-160]Zambon, P. / Gong, M. / Carlesi, J. / Padmabandu, G. G. / Binder, M. / Swanson, K. / Das, P. P. / SPIE et al. | 2000
- 1461
-
Extending the performance of KrF laser for microlithography by using novel F2control technologyZambon, Paolo / Gong, Mengxiong / Carlesi, Jason / Padmabandu, Gunasiri G. / Binder, Mike / Swanson, Ken / Das, Palash P. et al. | 2000
- 1471
-
Ultranarrow-bandwidth excimer lasers for 248-nm DUV lithography [4000-161]Patzel, R. / Albrecht, H.-S. / Berger, V. / Bragin, I. / Kramer, M. / Kleinschmidt, J. / Serwazi, M. / SPIE et al. | 2000
- 1471
-
Ultranarrow-bandwidth excimer lasers for 248-nm DUV lithographyPaetzel, Rainer / Albrecht, Hans Stephen / Berger, Vadim / Bragin, Igor / Kramer, Matthias / Kleinschmidt, Juergen / Serwazi, Marcus et al. | 2000
- 1476
-
Comparison of ArF and KrF laser performance at 2 kHz for microlithography [4000-162]Besaucele, H. / Das, P. P. / Duffey, T. P. / Embree, T. J. / Ershov, A. I. / Fleurov, V. B. / Grove, S. L. / Melcher, P. C. / Ness, R. / Padmabandu, G. G. et al. | 2000
- 1476
-
Comparison of ArF and KrF laser performance at 2 kHz for microlithographyBesaucele, Herve / Das, Palash P. / Duffey, Thomas P. / Embree, Todd J. / Ershov, Alexander I. / Fleurov, Vladimir B. / Grove, Steven L. / Melcher, Paul C. / Ness, Richard M. / Padmabandu, Gunasiri G. et al. | 2000
- 1481
-
High-NA high-throughput scanner compatible 2-kHz KrF excimer laser for DUV lithographyNakarai, Hiroaki / Hisanaga, Naoto / Suzuki, Natsushi / Matsunaga, Takeshi / Asayama, Takeshi / Akita, Jun / Igarashi, Toru / Ariga, Tatsuya / Bushida, Satoru / Enami, Tatsuo et al. | 2000
- 1481
-
High-NA high-throughput scanner compatible 2-kHz KrF excimer laser for DUV lithography [4000-163]Nakarai, H. / Hisanaga, N. / Suzuki, N. / Matsunaga, T. / Asayama, T. / Akita, J. / Igarashi, T. / Ariga, T. / Bushida, S. / Enami, T. et al. | 2000
- 1491
-
Fluoropolymers for 157-nm lithography: optical properties from VUV absorbance and ellipsometry measurements [4000-164]French, R. H. / Wheland, R. C. / Jones, D. J. / Hilfiker, J. N. / Synowicki, R. A. / Zumsteg, F. C. / Feldman, J. / Feiring, A. E. / SPIE et al. | 2000
- 1491
-
Fluoropolymers for 157-nm lithography: optical properties from VUV absorbance and ellipsometry measurementsFrench, Roger H. / Wheland, Robert C. / Jones, David J. / Hilfiker, James N. / Synowicki, Ron A. / Zumsteg, Fredrick C. / Feldman, Jerald / Feiring, Andrew E. et al. | 2000
- 1503
-
Absolute index of refraction and its temperature dependence of calcium fluoride, barium fluoride, and strontium fluoride near 157 nmBurnett, John H. / Gupta, Rajeev / Griesmann, Ulf et al. | 2000
- 1503
-
Absolute index of refraction and its temperature dependence of calcium fluoride, barium fluoride, and strontium fluoride near 157 nm [4000-165]Burnett, J. H. / Gupta, R. / Griesmann, U. / SPIE et al. | 2000
- 1510
-
New silica glass (AQF) for 157-nm lithography [4000-166]Ikuta, Y. / Kikugawa, S. / Kawahara, T. / Mishiro, H. / Shimodaira, N. / Yoshizawa, S. / SPIE et al. | 2000
- 1510
-
New silica glass (AQF) for 157-nm lithographyIkuta, Yoshiaki / Kikugawa, Shinya / Kawahara, T. / Mishiro, H. / Shimodaira, Noriaki / Yoshizawa, Shuhei et al. | 2000
- 1515
-
Advanced F~2 lasers for microlithography [4000-167]Vogler, K. / Stamm, U. / Bragin, I. / Voss, F. / Govorkov, S. V. / Hua, G. / Kleinschmidt, J. / Patzel, R. / SPIE et al. | 2000
- 1515
-
Advanced F2lasers for microlithographyVogler, Klaus / Stamm, Uwe / Bragin, Igor / Voss, Frank / Govorkov, Sergei V. / Hua, Gongxue / Kleinschmidt, Juergen / Paetzel, Rainer et al. | 2000
- 1529
-
Feasibility of highly line-narrowed F~2 laser for 157-nm microlithography [4000-168]Ershov, A. I. / Duffey, T. P. / Onkels, E. / Partlo, W. N. / Sandstrom, R. L. / SPIE et al. | 2000
- 1529
-
Feasibility of highly line-narrowed F2laser for 157-nm microlithographyErshov, Alexander I. / Duffey, Thomas P. / Onkels, Eckehard D. / Partlo, William N. / Sandstrom, Richard L. et al. | 2000
- 1537
-
Laser cleaning of optical elements in 157-nm lithographyBloomstein, Theodore M. / Rothschild, Mordechai / Liberman, Vladimir / Hardy, D. E. / Efremow, N. N. / Palmacci, Stephen T. et al. | 2000
- 1537
-
Laser cleaning of optical elements in 157-nm lithography [4000-169]Bloomstein, T. M. / Rothschild, M. / Liberman, V. / Hardy, D. E. / Efremow, N. N. / Palmacci, S. T. / SPIE et al. | 2000
- 1546
-
Properties and potential of VUV lithographic thin film materials [4000-170]Cangemi, M. / Lassiter, M. / Bourov, A. / Smith, B. W. / SPIE et al. | 2000
- 1546
-
Properties and potential of VUV lithographic thin film materialsCangemi, Michael J. / Lassiter, Matthew / Bourov, Anatoly / Smith, Bruce W. et al. | 2000
- 1553
-
VUV transmittance of fused silica glass influenced by thermal disorderShimodaira, Noriaki / Saito, Kazuya / Ikushima, Akira J. / Kamihori, Toru / Yoshizawa, Shuhei et al. | 2000
- 1553
-
VUV transmittance of fused silica glass influenced by thermal disorder [4000-172]Shimodaira, N. / Saito, K. / Ikushima, A. J. / Kamihori, T. / Yoshizawa, S. / SPIE et al. | 2000
- 1560
-
High-repetition-rate fluorine laser for microlithography [4000-173]Fujimoto, J. / Nagai, S. / Shio, K. / Iwata, Y. / Takehisa, K. / Nishisaka, T. / Wakabayashi, O. / Mizoguchi, H. / SPIE et al. | 2000
- 1560
-
High-repetition-rate fluorine laser for microlithographyFujimoto, Junichi / Nagai, Shinji / Shio, Koji / Iwata, Yasuaki / Takehisa, Kiwamu / Nishisaka, Toshihiro / Wakabayashi, Osamu / Mizoguchi, Hakaru et al. | 2000
- 1568
-
Dynamic change of transmission of CaF~2 single crystals by irradiating with ArF excimer laser light [4000-181]Alkemper, J. / Kandler, J. / Strenge, L. / Morsen, E. / Muhlig, C. / Triebel, W. / SPIE et al. | 2000
- 1568
-
Dynamic change of transmission of CaF2single crystals by irradiating with ArF excimer laser lightAlkemper, Jochen / Kandler, Joerg / Strenge, Lorenz / Moersen, Ewald / Muehlig, Christian / Triebel, Wolfgang et al. | 2000
- 1574
-
Progress in 157-nm lithography development at Intel: resists and reticles [4000-182]Rao, V. / Panning, E. M. / Liao, L. / Hutchinson, J. M. / Grenville, A. / Holl, S. M. / Bruner, D. / Balasubramanian, R. / Kuse, R. / Dao, G. T. et al. | 2000
- 1574
-
Progress in 157-nm lithography development at Intel: resists and reticlesRao, Veena / Panning, Eric M. / Liao, Ling / Hutchinson, John M. / Grenville, Andrew / Holl, Susan M. / Bruner, Don / Balasubramanian, Raghu / Kuse, Ronald / Dao, Giang T. et al. | 2000
- 1582
-
SVG 157-nm lithography approachMcClay, James A. / DeMarco, Michael A. / Fahey, Thomas J. / Hansen, Matthew E. / Tirri, Bruce A. et al. | 2000
- 1582
-
SVG 157-nm lithography approach [4000-183]McClay, J. A. / DeMarco, M. A. / Fahey, T. J. / Hansen, M. E. / Tirri, B. A. / SPIE et al. | 2000
- 1590
-
Interference lithography at 157 nmSwitkes, Michael / Bloomstein, Theodore M. / Rothschild, Mordechai et al. | 2000
- 1590
-
Interference lithography at 157 nm [4000-184]Switkes, M. / Bloomstein, T. M. / Rothschild, M. / SPIE et al. | 2000
- 1594
-
Influence of film stress on advanced optical reticle distortions [4000-185]Siewert, L. K. / Mikkelson, A. R. / Engelstad, R. L. / Lovell, E. G. / Mason, M. E. / Mackay, R. S. / SPIE et al. | 2000
- 1594
-
Influence of film stress on advanced optical reticle distortionsSiewert, Lowell K. / Mikkelson, Andrew R. / Engelstad, Roxann L. / Lovell, Edward G. / Mason, Mark E. / Mackay, R. S. et al. | 2000