Photoluminescence Study of Defects Induced by B~1~0H~1~4 Ions (Englisch)
- Neue Suche nach: Toyoda, N.
- Neue Suche nach: Aoki, T.
- Neue Suche nach: Matsuo, J.
- Neue Suche nach: Yamada, I.
- Neue Suche nach: Wada, K.
- Neue Suche nach: Kimerling, L. C.
- Neue Suche nach: Materials Research Society
- Neue Suche nach: Toyoda, N.
- Neue Suche nach: Aoki, T.
- Neue Suche nach: Matsuo, J.
- Neue Suche nach: Yamada, I.
- Neue Suche nach: Wada, K.
- Neue Suche nach: Kimerling, L. C.
- Neue Suche nach: Jones, E. C.
- Neue Suche nach: Materials Research Society
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:Photoluminescence Study of Defects Induced by B~1~0H~1~4 Ions
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Beteiligte:Toyoda, N. ( Autor:in ) / Aoki, T. ( Autor:in ) / Matsuo, J. ( Autor:in ) / Yamada, I. ( Autor:in ) / Wada, K. ( Autor:in ) / Kimerling, L. C. ( Autor:in ) / Jones, E. C. / Materials Research Society
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Kongress:Symposium J; 3rd, Si front-end processing: physics and technology of dopant-defect interactions ; 2001 ; San Francisco, CA
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Erschienen in:MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 669 ; J4.20
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Verlag:
- Neue Suche nach: Materials Research Society
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Erscheinungsort:Warrendale, Pa.
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Erscheinungsdatum:01.01.2002
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Format / Umfang:J4.20
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Anmerkungen:Held at the MRS Spring meeting
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Silicon Interstitial Driven Loss of Substitutional Carbon From SiGeC StructuresCarroll, M. S. / Sturm, J. C. / Napolitani, E. / De Salvador, D. / Berti, M. / Stangl, J. / Bauer, G. / Tweet, D. J. / Materials Research Society et al. | 2002
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Use of Isotopically Pure Silicon Material to Estimate Silicon Diffusivity in Silicon DioxideTsoukalas, D. / Tsamis, C. / Normand, P. / Materials Research Society et al. | 2002
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Diffusion of Implanted Nitrogen in Silicon at High DosesAdam, L. S. / Robertson, L. / Law, M. E. / Jones, K. / Gable, K. / Hegde, S. / Dokumaci, O. / Materials Research Society et al. | 2002
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Evolution of Defects Induced by High Energy He Implantation in Gold-Diffused SiliconEl Bouayadi, R. / Regula, G. / Pichaud, B. / Lancin, M. / Simon, J. J. / Ntsoenzok, E. / Materials Research Society et al. | 2002
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Effect of the Ge Preamorphization Dose on the Thermal Evolution of End of Range DefectsColombeau, B. / Cristiano, F. / Marrot, J.-C. / Assayag, G. B. / Claverie, A. / Materials Research Society et al. | 2002
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Modeling of Annealing of High Concentration Arsenic ProfilesFastenko, P. / Dunham, S. T. / Henkelman, G. / Materials Research Society et al. | 2002
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Carbon Diffusion and Clustering in SiGeC Layers Under Thermal OxidationDe Salvador, D. / Napolitani, E. / Coati, A. / Berti, M. / Drigo, A. V. / Carroll, M. / Sturm, J. C. / Stangl, J. / Bauer, G. / Lazzarini, L. et al. | 2002
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Nonmelt Laser Annealing of 1 keV Boron Implanted SiliconEarles, S. / Law, M. / Jones, K. / Talwar, S. / Corcoran, S. / Materials Research Society et al. | 2002
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Atomistic Modeling of Amorphization in SiliconPelaz, L. / Marques, L. A. / Gilmer, G. H. / Barbolla, J. / Materials Research Society et al. | 2002
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Advanced Ion Implantation Technology for High Performance TransistorsSuguro, K. / Murakoshi, A. / Iinuma, T. / Akutsu, H. / Shibata, T. / Sugihara, Y. / Okumura, K. / Materials Research Society et al. | 2002
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Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure ^3^0Silicon LayerNakabayashi, Y. / Osman, H. I. / Segawa, T. / Toyonaga, K. / Matsumoto, S. / Murota, J. / Wada, K. / Abe, T. / Materials Research Society et al. | 2002
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A New Model for Boron Diffusion Retardation in SiGe-Strained Layers Accounting for the Mechanism of Boron Trapping/Detrapping by Ge AtomsKol dyaev, V. I. / Materials Research Society et al. | 2002
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Diffusion and Defect Structure in Nitrogen Implanted SiliconDokumaci, O. / Kaplan, R. / Khare, M. / Ronsheim, P. / Burnham, J. / Domenicucci, A. / Li, J. / Fleming, R. / Adam, L. S. / Law, M. E. et al. | 2002
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Reverse Diode Leakage in Spike-Annealed Ultra-Shallow JunctionsGossmann, H.-J. L. / Feng, T. / Agarwal, A. / Frisella, P. / Rubin, L. M. / Materials Research Society et al. | 2002
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SSRM and SCM Observation of Modified Lateral Diffusion of As, BF2 and Sb Induced by Nitride SpacersEyben, P. / Duhayon, N. / Stuer, C. / De Wolf, I. / Rooyackers, R. / Clarysse, T. / Vandervorst, W. / Badenes, G. / Materials Research Society et al. | 2002
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Phosphorus Diffusion in Silicon; Influence of Annealing ConditionsChristensen, J. S. / Kuznetsov, A. Y. / Radamson, H. H. / Svensson, B. G. / Materials Research Society et al. | 2002
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A New Kinetic Model for the Nucleation and Growth of Self-Interstitial Clusters in SiliconOrtiz, C. J. / Mathiot, D. / Materials Research Society et al. | 2002
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Influence of Low Thermal Budget Pre-Anneals on the High Temperature Redistribution of Low Energy Boron Implants in SiliconBoucard, F. / Schott, M. / Mathiot, D. / Rivallin, P. / Holliger, P. / Guichard, E. / Materials Research Society et al. | 2002
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Photoluminescence Study of Defects Induced by B~1~0H~1~4 IonsToyoda, N. / Aoki, T. / Matsuo, J. / Yamada, I. / Wada, K. / Kimerling, L. C. / Materials Research Society et al. | 2002
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Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in SiliconBrindos, R. / Clark, M. H. / Jones, K. S. / Griglione, M. / Gossmann, H.-J. / Agarwal, A. / Murto, B. / Andideh, E. / Materials Research Society et al. | 2002
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Defect Evolution From Low Energy, Amorphizing, Germanium Implants on SiliconGutierrez, A. F. / Jones, K. S. / Downey, D. F. / Materials Research Society et al. | 2002
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Modeling Boron and Indium Electrical Activities in Silicon in the Presence of NitrogenZubkov, V. / Aronowitz, S. / Puchner, H. / Senosiain, J. P. / Materials Research Society et al. | 2002
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Antimony and Boron Diffusion in Silicon and Silicon Germanium Under the Influence of Point Defects Injection by Rapid Thermal AnnealDan, A. / Willoughby, A. F. W. / Bonar, J. M. / McGregor, B. M. / Dowsett, M. G. / Ormsby, T. J. / Materials Research Society et al. | 2002
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Conductance Imaging of the Depletion Region of Biased Silicon PN Junction DevicePark, J. Y. / Phaneuf, R. J. / Williams, E. D. / Materials Research Society et al. | 2002
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Ab Initio Modeling of C-B Interactions in SiLiu, C.-L. / Windl, W. / Borucki, L. / Lu, S. / Liu, X.-Y. / Materials Research Society et al. | 2002
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Effect of Arsenic on Extended Defect Evolution in SiliconBrindos, R. / Jones, K. S. / Law, M. E. / Materials Research Society et al. | 2002
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Lattice Site Location of Ultra-Shallow Implanted B in Si Using Ion Beam AnalysisKobayashi, H. / Nomachi, I. / Kusanagi, S. / Nishiyama, F. / Materials Research Society et al. | 2002
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Implant Dose and Spike Anneal Temperature RelationshipsBourdelle, K. K. / Fiory, A. T. / Gossmann, H.-J. L. / McCoy, S. P. / Materials Research Society et al. | 2002
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Modeling of Dopant Defect InteractionsCamarce, C. / Radic, L. / Keys, P. / Brindos, R. / Jones, K. S. / Law, M. E. / Materials Research Society et al. | 2002
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Doping Process Issues for Sub-0.1 mum Generation MOSFETsSugii, T. / Pidin, S. / Momiyama, Y. / Goto, K.-i. / Tanaka, T. / Yamamoto, T. / Futatugi, T. / Kase, M. / Materials Research Society et al. | 2002
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Shallow Junctions for Sub-100 nm CMOS TechnologyMeyssen, V. / Stolk, P. / van Zijl, J. / van Berkum, J. / van de Wijgert, W. / Lindsay, R. / Dachs, C. / Mannino, G. / Cowern, N. / Materials Research Society et al. | 2002
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A Quantitative Model of the Electrical Activity of Metal Silicide Precipitates in Silicon Based on the Schottky EffectTan, T. Y. / Plekhanov, P. S. / Materials Research Society et al. | 2002
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The Role of Ion Mass on End-of-Range Damage in Shallow Preamorphizing SiliconClark, M. H. / Jones, K. S. / Haynes, T. E. / Barbour, C. J. / Minor, K. G. / Andideh, E. / Materials Research Society et al. | 2002
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A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced DiffusionNgau, J. L. / Griffin, P. B. / Plummer, J. D. / Materials Research Society et al. | 2002
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Boron Solubility Limits Following Low Temperature Solid Phase Epitaxial RegrowthLindfors, C. D. / Jones, K. S. / Rendon, M. J. / Materials Research Society et al. | 2002
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Computer Simulation of Decaborane Implantation Into Silicon, Annealing and Recrystallization of SiliconInsepov, Z. / Yamada, I. / Materials Research Society et al. | 2002
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Laser Thermal Induced Crystallization for 20 nm Device StructuresYang, S. / Thompson, M. O. / Materials Research Society et al. | 2002
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Determining the Ratio of the Precipitated Versus Substituted Arsenic by XAFS and SIMS in Heavy Dose Arsenic Implants in SiliconSahiner, M. A. / Novak, S. W. / Woicik, J. C. / Liu, J. / Krishnamoorty, V. / Materials Research Society et al. | 2002