1,530V, 17.5mOmega cm^2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization (Englisch)
- Neue Suche nach: Fursin, L.
- Neue Suche nach: Li, X.
- Neue Suche nach: Zhao, J. H.
- Neue Suche nach: Fursin, L.
- Neue Suche nach: Li, X.
- Neue Suche nach: Zhao, J. H.
- Neue Suche nach: Madar, R.
- Neue Suche nach: Camassel, J.
- Neue Suche nach: Blanquet, Elisabeth
In:
International Conference on Silicon Carbide and Related Materials; ICSCRM2003
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1157-1160
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2004
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:1,530V, 17.5mOmega cm^2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization
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Beteiligte:Fursin, L. ( Autor:in ) / Li, X. ( Autor:in ) / Zhao, J. H. ( Autor:in ) / Madar, R. / Camassel, J. / Blanquet, Elisabeth
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Kongress:10th, International Conference on Silicon Carbide and Related Materials; ICSCRM2003 ; 2003 ; Lyon, France
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Erschienen in:MATERIALS SCIENCE FORUM ; 457-460 ; 1157-1160
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Uetikon-Zuerich, Switzerland , Great Britain
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Erscheinungsdatum:01.01.2004
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Format / Umfang:4 pages
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Silicon Carbide Crystal and Substrate Technology: A Survey of Recent AdvancesHobgood, H. M. / Brady, M. F. / Calus, M. R. / Jenny, J. R. / Leonard, R. T. / Malta, D. P. / Muller, S. G. / Powell, A. R. / Tsvetkov, V. F. / Glass, R. C. et al. | 2004
- 9
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SiC Crystal Growth by HTCVDEllison, A. / Magnusson, B. / Sundqvist, B. / Pozina, G. / Bergman, J. P. / Janzen, E. / Vehanen, A. et al. | 2004
- 15
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Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductorsvan de Walle, C. G. et al. | 2004
- 21
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Possibility of Power Electronics Paradigm Shift with Wide Band Gap SemiconductorsOhashi, H. et al. | 2004
- 29
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High-quality SiC bulk single crystall growth based on simulation and experimentNishizawa, S.I. / Kato, T. / Kitou, Y. / Oyanagi, N. / Hirose, F. / Yamaguchi, H. / Bahng, W. / Arai, K. et al. | 2004
- 29
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High-Quality SiC Bulk Single Crystal Growth Based on Simulation and ExperimentNishizawa, S. I. / Kato, T. / Kitou, Y. / Oyanagi, N. / Hirose, F. / Yamaguchi, H. / Bahng, W. / Arai, K. et al. | 2004
- 35
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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave DevicesJenny, J. R. / Malta, D. P. / Calus, M. R. / Muller, S. G. / Powell, A. R. / Tsvetkov, V. F. / Hobgood, H. M. / Glass, R. C. / Carter, C. H. et al. | 2004
- 41
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Large Diameter 4H-SiC Substrates for Commercial Power ApplicationsPowell, A. R. / Leonard, R. T. / Brady, M. F. / Muller, S. G. / Tsvetkov, V. F. / Trussell, R. / Sumakeris, J. J. / Hobgood, H. M. / Burk, A. A. / Glass, R. C. et al. | 2004
- 47
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Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth TechniqueNishiguchi, T. / Nakamura, M. / Isshiki, T. / Ohshima, S. / Nishino, S. et al. | 2004
- 51
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Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single CrystalsWang, S. / Sanchez, E. / Kopec, A. / Zhang, M. / Hernandez, O. et al. | 2004
- 55
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Analysis of Graphitization during Physical Vapor Transport Growth of Silicon CarbideWellmann, P. J. / Herro, Z. / Sakwe, S. A. / Masri, P. / Bogdanov, M. / Karpov, S. / Kulik, A. / Ramm, M. / Makarov, Y. et al. | 2004
- 59
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Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and CarbonSevast yanov, V. G. / Ezhov, Y. S. / Simonenko, E. P. / Kuznetsov, N. T. et al. | 2004
- 63
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Faceted Growth of SiC Bulk CrystalsMatukov, I. D. / Kalinin, D. S. / Bogdanov, M. V. / Karpov, S. Y. / Ofengeim, D. K. / Ramm, M. S. / Barash, J. S. / Mokhov, E. N. / Roenkov, A. D. / Vodakov, Y. A. et al. | 2004
- 67
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Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC GrowthKulik, A. V. / Bogdanov, M. V. / Karpov, S. Y. / Ramm, M. S. / Makarov, Y. N. et al. | 2004
- 71
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Free Growth of 4H-SiC by Sublimation MethodDedulle, J. M. / Anikin, M. / Pons, M. / Blanquet, E. / Pisch, A. / Madar, R. / Bernard, C. et al. | 2004
- 75
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Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC CrystalsAnderson, T. A. / Barrett, D. L. / Chen, J. / Elkington, W. T. / Emorhokpor, E. / Gupta, A. / Johnson, C. J. / Hopkins, R. H. / Martin, C. / Kerr, T. et al. | 2004
- 79
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Radial Expansion Growth of SiC Single Crystals with Higher Crystal QualityFujimoto, T. / Tsuge, H. / Katsuno, M. / Ohtani, N. / Yashiro, H. / Nakabayashi, M. et al. | 2004
- 83
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Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (1120) Seed CrystalKatsuno, M. / Ohtani, N. / Fujimoto, T. / Yashiro, H. et al. | 2004
- 87
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Growth of Bulk SiC by Halide Chemical Vapor DepositionFanton, M. / Skowronski, M. / Snyder, D. / Chung, H. J. / Nigam, S. / Weiland, B. / Huh, S. W. et al. | 2004
- 91
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Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport MethodChaussende, D. / Balloud, C. / Auvray, L. / Baillet, F. / Zielinski, M. / Juillaguet, S. / Mermoux, M. / Pernot, E. / Camassel, J. / Pons, M. et al. | 2004
- 95
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Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiCHerro, Z. G. / Epelbaum, B. M. / Bickermann, M. / Masri, P. / Winnacker, A. et al. | 2004
- 99
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Large Diameter and Long Length Growth of SiC Single CrystalKato, T. / Ohno, T. / Hirose, F. / Oyanagi, N. / Nishizawa, S. / Arai, K. et al. | 2004
- 103
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Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor TransportUm, M. Y. / Song, H. K. / Na, H. J. / Kim, D. H. / Song, I. B. / Jung, S. Y. / Jeong, J. K. / Lee, J. B. / Kim, H. J. et al. | 2004
- 107
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Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {0338} Substrate and Defect AnalysisFurusho, T. / Takagi, H. / Ota, S. / Shiomi, H. / Nishino, S. et al. | 2004
- 111
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Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon CarbideHerro, Z. G. / Epelbaum, B. M. / Bickermann, M. / Masri, P. / Seitz, C. / Magerl, A. / Winnacker, A. et al. | 2004
- 115
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High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source MaterialsOta, S. / Furusho, T. / Takagi, H. / Oshima, S. / Nishino, S. et al. | 2004
- 119
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Flux Growth of SiC Crystals from Eutectic Melt SiC-B~4CEpelbaum, B. M. / Gurzhiyants, P. A. / Herro, Z. / Bickermann, M. / Winnacker, A. et al. | 2004
- 123
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Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal SolventKusunoki, K. / Munetoh, S. / Kamei, K. / Hasebe, M. / Ujihara, T. / Nakajima, K. et al. | 2004
- 127
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The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth MethodBraescu, L. / Balint, A. M. / Balint, S. et al. | 2004
- 131
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Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle PrecursorsYamada, Y. / Nishizawa, S. / Nakashima, S. / Arai, K. et al. | 2004
- 135
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Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth MethodAuvray, L. / Chaussende, D. / Baillet, F. / Charpentier, L. / Pons, M. / Madar, R. et al. | 2004
- 139
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In Situ SiC Feeding by Chemical Vapor Deposition for Bulk GrowthCharpentier, L. / Baillet, F. / Chaussende, D. / Auvray, L. / Pons, M. / Pernot, E. / Madar, R. et al. | 2004
- 143
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Stable Parameter Range for 3C-SiC Sublimation Growth on GraphiteWollweber, J. / Mantzari, A. / Polychroniadis, E. K. / Balloud, C. / Freudenberg, A. / Nitschke, R. / Camassel, J. et al. | 2004
- 147
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Microstructure of Cubic SiC Grown by the Modified Lely-MethodNerding, M. / Semmelroth, K. / Pensl, G. / Nagasawa, H. / Strunk, H. P. et al. | 2004
- 151
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Growth of 3C-SiC Bulk Material by the Modified Lely MethodSemmelroth, K. / Krieger, M. / Pensl, G. / Nagasawa, H. / Pusche, R. / Hundhausen, M. / Ley, L. / Nerding, M. / Strunk, H. P. et al. | 2004
- 157
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Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction TechniquesHuang, X. R. / Dudley, M. / Cho, W. / Okojie, R. S. / Neudeck, P. G. et al. | 2004
- 163
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Surface Mechanisms in Homoepitaxial Growth on alpha-SiC{0001}-Vicinal FacesNakamura, S. I. / Kimoto, T. / Matsunami, H. et al. | 2004
- 169
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Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and CantileversNeudeck, P. G. / Powell, J. A. / Trunek, A. J. / Spry, D. J. et al. | 2004
- 175
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Flash Lamp Supported Deposition of 3C-SiC (FLASiC) - a Promising Technique to Produce High Quality Cubic SiC LayersSkorupa, W. / Panknin, D. / Anwand, W. / Voelskow, M. / Ferro, G. / Monteil, Y. / Leycuras, A. / Pezoldt, J. / McMahon, R. / Smith, M. et al. | 2004
- 181
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Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage ApplicationsThomas, B. / Bartsch, W. / Stein, R. / Schorner, R. / Stephani, D. et al. | 2004
- 185
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Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature MaskLi, C. / Seiler, J. / Bhat, I. / Chow, T. P. et al. | 2004
- 189
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Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor DepositionChen, Y. / Kimoto, T. / Takeuchi, Y. / Malhan, R. K. / Matsunami, H. et al. | 2004
- 193
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Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVDHallin, C. / Wahab, Q. / Ivanov, I. / Bergman, P. / Janzen, E. et al. | 2004
- 197
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High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(0001) FaceDanno, K. / Kimoto, T. / Matsunami, H. et al. | 2004
- 201
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Growth of Device Quality 4H-SiC High Velocity EpitaxyYakimova, R. / Syvajarvi, M. / Ciechonski, R. R. / Wahab, Q. et al. | 2004
- 205
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Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor DepositionFujiwara, H. / Danno, K. / Kimoto, T. / Tojo, T. / Matsunami, H. et al. | 2004
- 209
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4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor DepositionKojima, K. / Takahashi, T. / Ishida, Y. / Kuroda, S. / Okumura, H. / Arai, K. et al. | 2004
- 213
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Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate GrowthIshida, Y. / Takahashi, T. / Kojima, K. / Okumura, H. / Arai, K. / Yoshida, S. et al. | 2004
- 217
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Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor SystemsSartel, C. / Balloud, C. / Souliere, V. / Juillaguet, S. / Dazord, J. / Monteil, Y. / Camassel, J. / Rushworth, S. et al. | 2004
- 221
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Growth of Homoepitaxial Films on 4H-SiC(1120)and 8^o Off-Axis 4H-SiC(0001) Substrates and their CharacterizationBishop, S. M. / Preble, E. A. / Hallin, C. / Henry, A. / Storasta, L. / Jacobson, H. / Wagner, B. P. / Reitmeier, Z. J. / Janzen, E. / Davis, R. F. et al. | 2004
- 225
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Uniformity Improvement in SiC Epitaxial Growth by using Si-CondensationHarada, S. / Nakayama, K. / Sasaki, M. / Shiomi, H. et al. | 2004
- 229
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Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut DirectionsTsuchida, H. / Kamata, I. / Izumi, S. / Tawara, T. / Izumi, K. et al. | 2004
- 233
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Homoepitaxial Growth of Al-Doped 4H-SiC using Bis-Trimethylsilylmethane PrecursorSong, H. K. / Um, M. Y. / Na, H. J. / Kim, D. H. / Song, I. B. / Jung, S. Y. / Jeong, J. K. / Lee, J. B. / Kim, H. J. et al. | 2004
- 237
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Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC SubstratesBlanc, C. / Sartel, C. / Souliere, V. / Juillaguet, S. / Monteil, Y. / Camassel, J. et al. | 2004
- 241
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Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned SubstrateJacquier, C. / Ferro, G. / Godignon, P. / Montserrat, J. / Dezellus, O. / Monteil, Y. et al. | 2004
- 245
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Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid MechanismAbdou, F. / Jacquier, C. / Ferro, G. / Cauwet, F. / Monteil, Y. et al. | 2004
- 249
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Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in VacuumDavydov, S. Y. / Savkina, N. S. / Lebedev, A. A. / Syvajarvi, M. / Yakimova, R. et al. | 2004
- 253
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Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour InfiltrationKulik, V. I. / Kulik, A. V. / Ramm, M. S. / Makarov, Y. N. et al. | 2004
- 257
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Pendeo Epitaxial Growth of 3C-SiC on Si SubstratesShoji, A. / Okui, Y. / Nishiguchi, T. / Ohshima, S. / Nishino, S. et al. | 2004
- 261
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Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended DefectsTrunek, A. J. / Neudeck, P. G. / Powell, J. A. / Spry, D. J. et al. | 2004
- 265
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Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) SubstratesChassagne, T. / Ferro, G. / Haas, H. / Leycuras, A. / Mank, H. / Monteil, Y. et al. | 2004
- 269
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Growth of SiC Films using TetraethylsilaneKubo, N. / Kawase, T. / Asahina, S. / Kanayama, N. / Tsuda, H. / Moritani, A. / Kitahara, K. et al. | 2004
- 273
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Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"Chassagne, T. / Leycuras, A. / Balloud, C. / Arcade, P. / Peyre, H. / Juillaguet, S. et al. | 2004
- 277
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Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-EpitaxyBustarret, E. / Araujo, D. / Mendez, D. / Morales, F. M. / Pacheco, F. J. / Molina, S. I. / Rochat, N. / Ferro, G. / Monteil, Y. et al. | 2004
- 277
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Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxyBustarret, E. / Araujo, D. / Mendez, D. / Morales, F.M. / Pacheco, F.J. / Molina, S.I. / Rochat, N. / Ferro, G. / Monteil, Y. et al. | 2004
- 281
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Potential of HMDS/C~3H~8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)Ferro, G. / Camassel, J. / Juillaguet, S. / Balloud, C. / Polychroniadis, E. K. / Stoimenos, Y. / Seigle-Ferrand, P. / Dazord, J. / Monteil, Y. / Rushworth, S. A. et al. | 2004
- 285
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Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor DepositionNishiguchi, T. / Mukai, Y. / Nakamura, M. / Nishio, K. / Isshiki, T. / Ohshima, S. / Nishino, S. et al. | 2004
- 289
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Crystal Growth of 6H-SiC(0114) on 3C-SiC(001) Substrate by Sublimation EpitaxyTakagi, H. / Nishiguchi, T. / Ohta, S. / Furusho, T. / Ohshima, S. / Nishino, S. et al. | 2004
- 293
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Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBEWeih, P. / Cimalla, V. / Stauden, T. / Kosiba, R. / Spiess, L. / Romanus, H. / Gubisch, M. / Bock, W. / Freitag, T. / Fricke, P. et al. | 2004
- 297
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Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)Morales, F. M. / Zgheib, C. / Molina, S. I. / Araujo, D. / Garcia, R. / Fernandez, C. / Sanz-Hervas, A. / Masri, P. / Weih, P. / Stauden, T. et al. | 2004
- 301
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Stress Control in 3C-SiC Films Grown on Si(111)Zgheib, C. / Masri, P. / Weih, P. / Ambacher, O. / Pezoldt, J. et al. | 2004
- 305
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Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiCFu, X. A. / Dunning, J. / Zorman, C. A. / Mehregany, M. et al. | 2004
- 309
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Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas FlowsHernandez, M. J. / Cervera, M. / Piqueras, J. / del Cano, T. / Jimenez, J. et al. | 2004
- 313
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Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC LayersFerro, G. / Panknin, D. / Stoemenos, J. / Balloud, C. / Camassel, J. / Polychroniadis, E. / Monteil, Y. / Skorupa, W. et al. | 2004
- 317
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Low Temperature (320^oC) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin FilmsMiyajima, S. / Yamada, A. / Konagai, M. et al. | 2004
- 321
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Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) SubstrateSeo, S. H. / Lee, T. H. / Park, J. S. / Song, J. S. / Oh, M. H. et al. | 2004
- 325
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Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH~3SiH~3Ikoma, Y. / Ohtani, R. / Motooka, T. et al. | 2004
- 329
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Growth of SiC Nanorods and Microcrystals by Carbon Nanotubes-Confined ReactionShajahan, M. / Mo, Y. H. / Nahm, K. S. et al. | 2004
- 333
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Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon HeterostructuresSmith, M. / McMahon, R. / Voelskow, M. / Skorupa, W. / Stoemenos, J. et al. | 2004
- 339
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Structural Defects in SiC Crystals Investigated by High Energy X-Ray DiffractionWeisser, M. / Seitz, C. / Wellmann, P. J. / Hock, R. / Magerl, A. et al. | 2004
- 343
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TEM Observations of 4H-SiC Deformed at Room Temperature and 150^oCDemenet, J. L. / Milhet, X. / Rabier, J. / Cordier, P. et al. | 2004
- 347
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TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal SolventKamei, K. / Kusunoki, K. / Munetoh, S. / Ujihara, T. / Nakajima, K. et al. | 2004
- 351
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Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp ProcessPolychroniadis, E. / Stoemenos, J. / Ferro, G. / Monteil, Y. / Panknin, D. / Skorupa, W. et al. | 2004
- 355
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Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron MicroscopyIdrissi, H. / Lancin, M. / Regula, G. / Pichaud, B. et al. | 2004
- 359
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TEM of Dislocations in Forward-Biased 4H-SiC PiN DiodesZhang, M. / Lendenmann, H. / Pirouz, P. et al. | 2004
- 363
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X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer InterfaceArgunova, T. S. / Gutkin, M. Y. / Je, J. H. / Sorokin, L. M. / Mosina, G. N. / Savkina, N. S. / Shuman, V. B. / Lebedev, A. A. et al. | 2004
- 367
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Structural Transformation of Dislocated Micropipes in Silicon CarbideGutkin, M. Y. / Sheinerman, A. G. / Argunova, T. S. / Mokhov, E. N. / Je, J. H. / Hwu, Y. / Tsai, W. L. et al. | 2004
- 371
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Deformation of 4H-SiC Single Crystals Oriented for Prism SlipZhang, M. / Hobgood, H. M. / Pirouz, P. et al. | 2004
- 375
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Inelastic Stress Relaxation in Single Crystal SiC SubstratesOkojie, R. S. et al. | 2004
- 379
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Dependence of Micropipe Dissociation on Surface OrientationKamata, I. / Tsuchida, H. / Izumi, S. / Tawara, T. / Izumi, K. et al. | 2004
- 383
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Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic ApproachSemennikov, A. K. / Karpov, S. Y. / Ramm, M. S. / Romanov, A. E. / Makarov, Y. N. et al. | 2004
- 387
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Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4HChaussende, D. / Chaudouet, P. / Auvray, L. / Pons, M. / Madar, R. et al. | 2004
- 391
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Reconstruction of Cleaved 6H-SiC SurfacesStarke, U. / Tallarida, M. / Kumar, A. / Horn, K. / Seifarth, O. / Kipp, L. et al. | 2004
- 395
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The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiCSeyller, T. / Sieber, N. / Emtsev, K. V. / Graupner, R. / Ley, L. / Tadich, A. / James, D. / Riley, J. D. / Leckey, R. C. G. / Polcik, M. et al. | 2004
- 399
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H-Induced Si-Rich 3C-Si(100) 3x2 Surface MetallizationD Angelo, M. / Enriquez, H. / Silly, M. G. / Derycke, V. / Aristov, V. Y. / Soukiassian, P. / Ottavianni, C. / Pedio, M. / Perfetti, P. et al. | 2004
- 403
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Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-VacuumYasushi, A. / Sano, N. / Kaneko, T. et al. | 2004
- 407
-
SiC Surface Nanostructures Induced by Self-Ordering of Nano-FacetsTanaka, S. / Nakagawa, H. / Suemune, I. et al. | 2004
- 411
-
Dynamic of Laser Ablation in SiCMedvid, A. / Lytvyn, P. et al. | 2004
- 415
-
Tailoring the SiC Subsurface Stacking by the Chemical PotentialStarke, U. / Bernhardt, J. / Schardt, J. / Seubert, A. / Heinz, K. et al. | 2004
- 419
-
Growth of Ultrathin Ag Films on 4H-SiC(0001)Soubatch, S. / Starke, U. et al. | 2004
- 423
-
Wettability Study of SiC in Correlation with XPS AnalysisStambouli, V. / Chaussende, D. / Anikin, M. / Berthome, G. / Thoreau, V. / Joud, J. C. et al. | 2004
- 427
-
Interface Electronic Structures of Transition Metal(Cr, Fe) on 6H(4H)-SiC(0001)Si Face by Soft X-Ray Fluorescence SpectroscopyHirai, M. / Kamezawa, C. / Azatyan, S. / An, Z. / Shinagawa, T. / Fujisawa, T. / Kusaka, M. / Iwami, M. et al. | 2004
- 431
-
Modification of 6H-SiC Surface Defect Structure during Hydrogen EtchingBondokov, R. T. / Tipirneni, N. / Cherednichenko, D. I. / Sudarshan, T. S. et al. | 2004
- 437
-
Defects in High-Purity Semi-Insulating SiCSon, N. T. / Magnusson, B. / Zolnai, Z. / Ellison, A. / Janzen, E. et al. | 2004
- 443
-
Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiCGali, A. / Deak, P. / Rauls, E. / Ordejon, P. / Carlsson, F. H. C. / Ivanov, I. G. / Son, N. T. / Janzen, E. / Choyke, W. J. et al. | 2004
- 449
-
A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon InterstitialsMattausch, A. / Bockstedte, M. / Pankratov, O. et al. | 2004
- 453
-
Density Functional Based Modelling of 30^o Partial Dislocations in SiCBlumenau, A. T. / Jones, R. / Oberg, S. / Briddon, P. R. / Frauenheim, T. et al. | 2004
- 457
-
Atomic Computer Simulations of Defect Migration in 3C and 4H-SiCGao, F. / Weber, W. J. / Posselt, M. / Belko, V. et al. | 2004
- 461
-
Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiCCarlos, W. E. / Glaser, E. R. / Shanabrook, B. V. et al. | 2004
- 465
-
EPR and Pulsed ENDOR Study of E16 and Related Defects in 4H-SiCUmeda, T. / Ishitsuka, Y. / Isoya, J. / Morishita, N. / Ohshima, T. / Kamiya, T. et al. | 2004
- 469
-
Investigations of Possible Nitrogen Participation in the Z~1/Z~2 Defect in 4H-SiCStorasta, L. / Henry, A. / Bergman, J. P. / Janzen, E. et al. | 2004
- 473
-
Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiCZolnai, Z. / Son, N. T. / Magnusson, B. / Hallin, C. / Janzen, E. et al. | 2004
- 477
-
Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect TransistorsMeyer, D. J. / Bohna, N. A. / Lenahan, P. M. / Lelis, A. et al. | 2004
- 481
-
Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiCAlfieri, G. / Monakhov, E. V. / Svensson, B. G. et al. | 2004
- 485
-
Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light ExcitationWeidner, M. / Pensl, G. / Nagasawa, H. / Schoner, A. / Ohshima, T. et al. | 2004
- 489
-
Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiCZvanut, M. E. / Konovalov, V. V. / Mitchel, W. C. / Mitchell, W. D. et al. | 2004
- 493
-
Defects in He^+ Irradiated 6H-SiC Probed by DLTS and LTPL MeasurementsRuggiero, A. / Libertino, S. / Mauceri, M. / Reitano, R. / Musumeci, P. / Roccaforte, F. / La Via, F. / Calcagno, L. et al. | 2004
- 497
-
The Influence of Recombination-Induced Migration of Hydrogen on the Formation of V~S~i-H Complexes in SiCKoshka, Y. / Mazzola, M. S. et al. | 2004
- 501
-
Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC SubstratesKalabukhova, E. N. / Lukin, S. N. / Savchenko, D. V. / Mitchel, W. C. / Mitchell, W. D. et al. | 2004
- 505
-
Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect DistributionKato, M. / Ichimura, M. / Arai, E. / Sumie, S. / Hashizume, H. et al. | 2004
- 509
-
Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC PlasmaOttaviani, L. / Yakimov, E. / Hidalgo, P. / Martinuzzi, S. et al. | 2004
- 513
-
Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical SpectroscopyReshanov, S. A. / Schneider, K. / Helbig, R. / Pensl, G. / Nagasawa, H. / Schoner, A. et al. | 2004
- 517
-
Annealing Study on Radiation-Induced Defects in 6H-SiCPinheiro, M. V. B. / Lingner, T. / Caudepon, F. / Greulich-Weber, S. / Spaeth, J. M. et al. | 2004
- 521
-
Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial FilmsOkada, T. / Kimoto, T. / Yamai, K. / Matsunami, H. / Inoko, F. et al. | 2004
- 525
-
Formation of Stacking Faults in Diffused SiC p^+/n^-/n^+ and p^+/p^-/n^+ DiodesSoloviev, S. / Cherednichenko, D. / Sudarshan, T. S. et al. | 2004
- 529
-
Residual Stresses and Stacking Faults in n-Type 4H-SiC EpilayersOkojie, R. S. / Zhang, M. / Pirouz, P. et al. | 2004
- 533
-
Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN DiodesStahlbush, R. E. / Twigg, M. E. / Irvine, K. G. / Sumakeris, J. J. / Chow, T. P. / Losee, P. A. / Zhu, L. / Tang, Y. / Wang, W. et al. | 2004
- 537
-
Partial Dislocations and Stacking Faults in 4H-SiC PiN DiodesTwigg, M. E. / Stahlbush, R. E. / Fatemi, M. / Arthur, S. D. / Fedison, J. B. / Tucker, J. B. / Wang, S. et al. | 2004
- 543
-
SiC Studied Via LEEN and Cathodoluminescence SpectroscopyBrillson, L. J. / Tumakha, S. / Okojie, R. S. / Zhang, M. / Pirouz, P. et al. | 2004
- 549
-
Properties of the Bound Excitons Associated to the 3838A Line in 4H-SiC and the 4182A Line in 6H-SiCHenry, A. / Janson, M. S. / Janzen, E. et al. | 2004
- 555
-
Electrical Transport Properties of n-Type 4H and 6H Silicon CarbideContreras, S. / Pernot, J. et al. | 2004
- 561
-
Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiCSteeds, J. W. / Furkert, S. / Hayes, J. M. / Sullivan, W. et al. | 2004
- 565
-
Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC EpilayersTawara, T. / Tsuchida, H. / Izumi, S. / Kamata, I. / Izumi, K. et al. | 2004
- 569
-
Photoluminescence Mapping of a SiC Wafer in Device ProcessingTajima, M. / Sugahara, T. / Hoshino, N. / Tanimoto, S. / Takahashi, T. / Nakashima, S. / Yamamoto, T. et al. | 2004
- 573
-
Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum WellsBai, S. / Devaty, R. P. / Choyke, W. J. / Kaiser, U. / Wagner, G. / MacMillan, M. F. et al. | 2004
- 577
-
Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC LayersJuillaguet, S. / Balloud, C. / Pernot, J. / Sartel, C. / Souliere, V. / Camassel, J. / Monteil, Y. et al. | 2004
- 581
-
Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC SubstratesSkromme, B. J. / Mikhov, M. K. / Chen, L. / Samson, G. / Wang, R. / Li, C. / Bhat, I. et al. | 2004
- 585
-
Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiCIvanov, I. G. / Janzen, E. et al. | 2004
- 589
-
Photoluminescence Study of C-H and C-D Centers in 4H SiCBai, S. / Yan, F. / Devaty, R. P. / Choyke, W. J. / Grotzschel, R. / Wagner, G. / MacMillan, M. F. et al. | 2004
- 593
-
Optical Characterization of Full SiC WaferEl Harrouni, I. / Bluet, J. M. / Ziane, D. / Mermoux, M. / Baillet, F. / Guillot, G. et al. | 2004
- 597
-
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in VacuumLebedev, A. A. / Strel chuk, A. M. / Kuznetsov, A. N. / Savkina, N. S. et al. | 2004
- 601
-
Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device ResearchMa, X. / Dudley, M. / Sudarshan, T. et al. | 2004
- 605
-
Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap FrequenciesGrivickas, V. / Grivickas, P. / Linnros, J. / Galeckas, A. et al. | 2004
- 609
-
Raman Imaging Characterization of Structural and Electrical Properties in 4H SiCMermoux, M. / Crisci, A. / Baillet, F. et al. | 2004
- 613
-
Raman Scattering by Coupled Phonon-Plasmon ModesFalkovsky, L. A. et al. | 2004
- 617
-
Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman SpectroscopyPusche, R. / Hundhausen, M. / Ley, L. / Semmelroth, K. / Schmid, F. / Pensl, G. / Nagasawa, H. et al. | 2004
- 621
-
Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman ScatteringKurimoto, E. / Hangyo, M. / Harima, H. / Kisoda, K. / Nishiguchi, T. / Nishino, S. / Nakashima, S. / Katsuno, M. / Ohtani, N. et al. | 2004
- 625
-
Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation MethodSeo, S. H. / Park, J. H. / Song, J. S. / Oh, M. H. et al. | 2004
- 629
-
Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor DepositionOkamoto, M. / Kosugi, R. / Nakashima, S. / Fukuda, K. / Arai, K. et al. | 2004
- 633
-
Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering SpectroscopyUjihara, T. / Munetoh, S. / Kusunoki, K. / Kamei, K. / Usami, N. / Fujiwara, K. / Sazaki, G. / Nakajima, K. et al. | 2004
- 637
-
Low Temperature Annealing of Optical Centres in 4H SiCSteeds, J. W. / Furkert, S. / Hayes, J. M. / Sullivan, W. et al. | 2004
- 641
-
Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiCBai, S. / Choyke, W. J. / Devaty, R. P. et al. | 2004
- 645
-
On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiCWeingartner, R. / Wellmann, P. J. / Winnacker, A. et al. | 2004
- 649
-
Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiCBlanc, C. / Pernot, J. / Camassel, J. et al. | 2004
- 653
-
Brillouin Scattering Studies of Surface Acoustic Waves in SiCAndrews, G. T. / Clouter, M. J. / Mroz, B. / Shishkin, Y. / Ke, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2004
- 657
-
Optical Investigation of the Built-In Strain in 3C-SiC EpilayersGaleckas, A. / Kuznetsov, A. Y. / Chassagne, T. / Ferro, G. / Linnros, J. / Grivickas, V. et al. | 2004
- 661
-
Specificity of Electron Impact Ionization in Superstructure Silicon CarbideSankin, V. I. / Shkrebiy, P. P. / Savkina, N. S. / Lepneva, A. A. et al. | 2004
- 665
-
Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiCTamulaitis, G. / Yilmaz, I. / Shur, M. S. / Gaska, R. / Anderson, T. et al. | 2004
- 669
-
Electrical Characterization of Semi-Insulating 6H-SiC SubstratesSanchez, E. / Wan, J. / Wang, S. / Loboda, M. / Li, C. / Skowronski, M. et al. | 2004
- 673
-
Impact Ionization Coefficients of 4H-SiCHatakeyama, T. / Watanabe, T. / Kojima, K. / Sano, N. / Shiraishi, K. / Kushibe, M. / Imai, S. / Shinohe, T. / Suzuki, T. / Tanaka, T. et al. | 2004
- 677
-
Temperature-Dependent Hall Effect Measurements in Low - Compensated p-Type 4H-SiCKasamakova-Kolaklieva, L. / Storasta, L. / Ivanov, I. G. / Magnusson, B. / Contreras, S. / Consejo, C. / Pernot, J. / Zielinski, M. / Janzen, E. et al. | 2004
- 681
-
Electrochemical C-V Profiling of n-Type 4H-SiCZekentes, K. / Kayambaki, M. / Mousset, S. et al. | 2004
- 685
-
Impurity Conduction Observed in Al-Doped 6H-SiCKrieger, M. / Semmelroth, K. / Pensl, G. et al. | 2004
- 689
-
Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy MobilitySaks, N. S. / Ancona, M. G. / Lipkin, L. A. et al. | 2004
- 693
-
High Phonon-Drag Thermoelectric Efficiency of SiC at Low TemperaturesVelmre, E. / Udal, A. / Grivickas, V. et al. | 2004
- 697
-
As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiCvan Wyk, E. / Leitch, A. W. R. et al. | 2004
- 701
-
Impact Ionization in alpha-SiC and Avalanche PhotoamplifiersSankin, V. I. et al. | 2004
- 705
-
Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial LayersKalinina, E. / Kholuyanov, G. / Strel chuk, A. / Davydov, D. / Hallen, A. / Konstantinov, A. / Nikiforov, A. et al. | 2004
- 711
-
The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass TheoryGerstmann, U. / Gali, A. / Deak, P. / Frauenheim, T. / Overhof, H. et al. | 2004
- 715
-
The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical StudyBockstedte, M. / Mattausch, A. / Pankratov, O. et al. | 2004
- 719
-
Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder SourceHerro, Z. G. / Bickermann, M. / Epelbaum, B. M. / Weingartner, R. / Kunecke, U. / Winnacker, A. et al. | 2004
- 723
-
In Situ Er-Doping of SiC Bulk Single CrystalsMuller, R. / Desperrier, P. / Seitz, C. / Weisser, M. / Magerl, A. / Maier, M. / Winnacker, A. / Wellmann, P. et al. | 2004
- 727
-
Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as SourceDesperrier, P. / Muller, R. / Winnacker, A. / Wellmann, P. J. et al. | 2004
- 731
-
Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during GrowthMeziere, J. / Ferret, P. / Blanquet, E. / Pons, M. / Di Cioccio, L. / Billon, T. et al. | 2004
- 735
-
Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si MeltJacquier, C. / Ferro, G. / Balloud, C. / Zielinski, M. / Camassel, J. / Polychroniadis, E. / Stoemenos, J. / Cauwet, F. / Monteil, Y. et al. | 2004
- 739
-
Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor DepositionHatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2004
- 743
-
Formation of SiC Delta-Doped-Layer Structures by CVDTakahashi, K. / Uchida, M. / Kusumoto, O. / Yamashita, K. / Miyanaga, R. / Kitabatake, M. et al. | 2004
- 747
-
As-Grown 4H-SiC Epilayers with Magnetic PropertiesSyvajarvi, M. / Stanciu, V. / Izadifard, M. / Chen, W. M. / Buyanova, I. A. / Svendlindh, P. / Yakimova, R. et al. | 2004
- 751
-
Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiCMatsuura, H. / Aso, K. / Kagamihara, S. / Iwata, H. / Ishida, T. / Nishikawa, K. et al. | 2004
- 755
-
Non-Contact Doping Profiling in Epitaxial SiCSavtchouk, A. / Oborina, E. / Hoff, A. M. / Lagowski, J. et al. | 2004
- 759
-
Generation of Stacking Faults in Highly Doped n-Type 4H-SiC SubstratesZhang, M. / Hobgood, H. M. / Treu, M. / Pirouz, P. et al. | 2004
- 763
-
Spin-On Doping of Porous SiC with ErKoshka, Y. / Song, Y. / Walker, J. / Saddow, S. E. / Mynbaeva, M. et al. | 2004
- 767
-
Sc Impurity in Silicon CarbideYuryeva, E. I. / Zubkov, V. I. / Ballandovich, V. S. / Parfenova, I. I. et al. | 2004
- 771
-
Measurement of Low Level Nitrogen in Silicon Carbide Using SIMSWang, L. et al. | 2004
- 775
-
Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL MeasurementsJuillaguet, S. / Zielinski, M. / Balloud, C. / Sartel, C. / Consejo, C. / Boyer, B. / Souliere, V. / Camassel, J. / Monteil, Y. et al. | 2004
- 779
-
Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing ProcessUekusa, S. / Maruyama, H. et al. | 2004
- 783
-
Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon CarbidePasold, G. / Albrecht, F. / Hulsen, C. / Sielemann, R. / Zeitz, W. D. / Witthuhn, W. et al. | 2004
- 787
-
Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic ResonanceBickermann, M. / Irmscher, K. / Epelbaum, B. M. / Winnacker, A. et al. | 2004
- 791
-
Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTSGrossner, U. / Grillenberger, J. / Albrecht, F. / Pasold, G. / Sielemann, R. / Svensson, B. G. / Witthuhn, W. et al. | 2004
- 797
-
Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC EpilayersLee, K. S. / Lee, S. H. / Kim, M. / Nahm, K. S. et al. | 2004
- 801
-
Electro-Chemical Mechanical Polishing of Silicon CarbideLi, C. / Wang, R. / Seiler, J. / Bhat, I. et al. | 2004
- 805
-
Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC SubstratesHeydemann, V. D. / Everson, W. J. / Gamble, R. D. / Snyder, D. W. / Skowronski, M. et al. | 2004
- 809
-
Surface Modification of 3C-SiC for Good Ni Ohmic ContactNoh, J. I. / Lee, S. H. / Nahm, K. S. et al. | 2004
- 813
-
Mechanisms in Electrochemical Etching of alpha-SiC SubstratesMikami, H. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2004
- 817
-
Modification of the Silicon Carbide by Proton IrradiationBogdanova, E. V. / Kozlovski, V. V. / Rumyantsev, D. S. / Volkova, A. A. / Lebedev, A. A. et al. | 2004
- 821
-
Etching of SiC with Fluorine ECR PlasmaForster, C. / Cimalla, V. / Kosiba, R. / Ecke, G. / Weih, P. / Ambacher, O. / Pezoldt, J. et al. | 2004
- 825
-
Characterization of 3C-SiC Monocrystals Using Positron Annihilation SpectroscopyKerbiriou, X. / Gredde, A. / Barthe, M. F. / Desgardin, P. / Blondiaux, G. et al. | 2004
- 829
-
Improvement of SiC Wafer Warp by AnnealingSasaki, M. / Harada, S. / Okamoto, Y. / Kinoshita, H. / Miyanagi, Y. / Shiomi, H. et al. | 2004
- 833
-
Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic ContactsPope, G. / Guy, O. / Mawby, P. A. et al. | 2004
- 837
-
Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiCParisini, A. / Poggi, A. / Nipoti, R. et al. | 2004
- 841
-
Improved AlNi Ohmic Contacts to p-Type SiCTsao, B. H. / Liu, S. / Scofield, J. et al. | 2004
- 845
-
Electrical Characterization of Deposited and Oxidized Ta~2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor StructuresPerez, A. / Tournier, D. / Montserrat, J. / Mestres, N. / Sandiumenge, F. / Millan, J. et al. | 2004
- 849
-
In Situ Investigation of Carbon Reduction at Ni/4H-SiC Interface using a Silicon InterlayerLee, W. Y. / Teng, K. S. / Wilks, S. P. et al. | 2004
- 853
-
The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and X-Ray Photoelectron SpectroscopyGuy, O. J. / Pope, G. / Blackwood, I. / Teng, K. S. / Lee, W. Y. / Wilks, S. P. / Mawby, P. A. et al. | 2004
- 857
-
The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiCKorolkov, O. / Kuznetsova, N. / Ruut, J. / Rang, T. et al. | 2004
- 861
-
Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky BarrierLa Via, F. / Roccaforte, F. / Raineri, V. / Mauceri, M. / Ruggiero, A. / Musumeci, P. / Calcagno, L. et al. | 2004
- 865
-
Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiCRoccaforte, F. / La Via, F. / Baeri, A. / Raineri, V. / Calcagno, L. / Mangano, F. et al. | 2004
- 869
-
Electrical Characterization of Inhomogeneous Ni~2/Si/SiC Schottky ContactsRoccaforte, F. / La Via, F. / Raineri, V. / Pierobon, R. / Zanoni, E. et al. | 2004
- 873
-
Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon CarbideBaeri, A. / Raineri, V. / Roccaforte, F. / La Via, F. / Zanetti, E. et al. | 2004
- 877
-
High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiCKakanakov, R. / Kasamakova-Kolaklieva, L. / Hristeva, N. / Lepoeva, G. / Gomes, J. B. / Avramova, I. / Marinova, T. et al. | 2004
- 881
-
Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiCScorzoni, A. / Moscatelli, F. / Poggi, A. / Cardinali, G. C. / Nipoti, R. et al. | 2004
- 885
-
Effect of High-Dose Aluminium Implantation on 4H-SiC OxidationCheng, L. / Casady, J. R. B. / Mazzola, J. / Casady, J. B. / Koshka, Y. / Bondarenko, V. et al. | 2004
- 889
-
Structural Defects Formed in Al-Implanted and Annealed 4H-SiCJones, K. A. / Zheleva, T. S. / Kulkarni, V. N. / Ervin, M. H. / Derenge, M. A. / Vispute, R. D. et al. | 2004
- 893
-
Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC CrystalsBlanque, S. / Perez, R. / Godignon, P. / Mestres, N. / Morvan, E. / Kerlain, A. / Dua, C. / Brylinski, C. / Zielinski, M. / Camassel, J. et al. | 2004
- 897
-
Effect of Implantation Temperature on Redistribution of Al in SiC during AnnealingUsov, I. O. / Suvorova, A. A. / Suvorov, A. V. et al. | 2004
- 901
-
Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiCSenzaki, J. / Fukuda, K. / Arai, K. et al. | 2004
- 905
-
Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance SpectroscopyNarita, K. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. / Senzaki, J. / Nakashima, S. et al. | 2004
- 909
-
Annealing Process of N^+-/P^+-Ions Coimplanted along with Si^+-, C^+- or Ne^+-Ions into 4H-SiC - Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?Schmid, F. / Pensl, G. et al. | 2004
- 913
-
Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (1120) FaceNegoro, Y. / Katsumoto, K. / Kimoto, T. / Matsunami, H. / Schmid, F. / Pensl, G. et al. | 2004
- 917
-
Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiCLinnarsson, M. K. / Janson, M. S. / Shoner, A. / Konstantinov, A. / Svensson, B. G. et al. | 2004
- 921
-
Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC LayersMerrett, J. N. / Scofield, J. D. / Tsao, B. H. / Mazzola, M. / Seale, D. / Draper, W. A. / Sankin, I. / Casady, J. B. / Bondarenko, V. et al. | 2004
- 925
-
Reactive Ion Etching of Silicon Carbide with Patterned Boron ImplantationVassilevski, K. V. / Hedley, J. / Horsfall, A. B. / Johnson, C. M. / Wright, N. G. et al. | 2004
- 929
-
Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiCJones, K. A. / Zheleva, T. S. / Ervin, M. H. / Shah, P. B. / Derenge, M. A. / Gerardi, G. J. / Freitas, J. A. / Vispute, R. D. et al. | 2004
- 933
-
Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite CapNegoro, Y. / Katsumoto, K. / Kimoto, T. / Matsunami, H. et al. | 2004
- 937
-
Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room TemperatureDeclemy, A. / Shiryaev, A. / Stepanov, S. / Barbot, J. F. / Beaufort, M. F. / Oliviero, E. / Ntsoenzok, E. / Sauvage, T. et al. | 2004
- 941
-
Visible Light Laser Irradiation: a Tool for Implantation Damage ReductionCamassel, J. / Peyre, H. / Brink, D. J. / Zielinski, M. / Blanque, S. / Mestres, N. / Godignon, P. et al. | 2004
- 945
-
SiC donor doping by 300 deg C P implantation: characterization of the doped layer properties in dependence of the post-implantation annealing temperaturePoggi, A. / Nipoti, R. / Moscatelli, F. / Cardinali, G.C. / Canino, M. et al. | 2004
- 945
-
SiC Donor Doping by 300^oC P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing TemperaturePoggi, A. / Nipoti, R. / Moscatelli, F. / Cardinali, G. C. / Canino, M. et al. | 2004
- 951
-
SiC-Based Current Limiter DevicesChante, J. P. / Tournier, D. / Planson, D. / Raynaud, C. / Lazar, M. / Locatelli, M. L. / Brosselard, P. et al. | 2004
- 957
-
High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature ApplicationsZhao, J. H. / Li, X. / Tone, K. / Alexandrov, P. / Fursin, L. / Carter, J. / Weiner, M. et al. | 2004
- 963
-
SiC Devices for High Voltage High Power ApplicationsSugawara, Y. et al. | 2004
- 969
-
First Principles Derivation of Carrier Transport across Metal - SiC BarriersDimitriu, C. B. / Horsfall, A. B. / Wright, N. G. / Johnson, C. M. / Vassilevski, K. V. / O Neill, A. G. et al. | 2004
- 973
-
Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode CharacteristicsWeiss, R. / Frey, L. / Ryssel, H. et al. | 2004
- 977
-
Theoretical Investigations of Microwave Characteristics of Tunnett Diodes Made of Silicon CarbideBuniatyan, V. V. / Aroutiounian, V. M. / Zekentes, K. / Camara, N. / Soukiassian, P. et al. | 2004
- 981
-
Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch TechnologyTreu, M. / Rupp, R. / Brunner, H. / Dahlquist, F. / Hecht, C. et al. | 2004
- 985
-
4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting IssuesSyrkin, A. / Dmitriev, V. / Soukhoveev, V. / Mynbaeva, M. / Kakanakov, R. / Hallin, C. / Janzen, E. et al. | 2004
- 989
-
Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron ImplantationVassilevski, K. V. / Horsfall, A. B. / Johnson, C. M. / Wright, N. G. et al. | 2004
- 993
-
Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V MeasurementsMoscatelli, F. / Scorzoni, A. / Poggi, A. / Cardinali, G. C. / Nipoti, R. et al. | 2004
- 997
-
Origin of Leakage Current in SiC Schottky Barrier Diodes at High TemperatureSaitoh, H. / Kimoto, T. / Matsunami, H. et al. | 2004
- 1001
-
Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen TreatmentsKim, D. H. / Na, H. J. / Jung, S. Y. / Song, I. B. / Um, M. Y. / Song, H. K. / Jeong, J. K. / Lee, J. B. / Kim, H. J. et al. | 2004
- 1005
-
P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry EtchingSarov, G. / Cholakova, T. / Kakanakov, R. et al. | 2004
- 1009
-
Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC SubstrateTanaka, Y. / Ohno, T. / Oyanagi, N. / Nishizawa, S. / Suzuki, T. / Fukuda, K. / Yatsuo, T. / Arai, K. et al. | 2004
- 1013
-
Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting RingBahng, W. / Song, G. H. / Kim, H. W. / Seo, K. S. / Kim, N. K. et al. | 2004
- 1017
-
Current Transport Mechanisms in 4H-SiC PiN DiodesCamara, N. / Bano, E. / Zekentes, K. et al. | 2004
- 1021
-
On-Chip Temperature Monitoring of a SiC Current LimiterTournier, D. / Godignon, P. / Millan, J. / Planson, D. / Chante, J. P. / Sarrus, F. / de Palma, J. F. et al. | 2004
- 1025
-
The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical StudyLazar, M. / Cardinali, G. / Raynaud, C. / Poggi, A. / Planson, D. / Nipoti, R. / Chante, J. P. et al. | 2004
- 1029
-
Low Voltage Silicon Carbide Zener DiodeVassilevski, K. V. / Zekentes, K. / Horsfall, A. B. / Johnson, C. M. / Wright, N. G. et al. | 2004
- 1033
-
Design, Fabrication and Characterization of 5 kV 4H-SiC p^+n Planar Bipolar Diodes Protected by Junction Termination ExtensionRaynaud, C. / Lazar, M. / Planson, D. / Chante, J. P. / Sassi, Z. et al. | 2004
- 1037
-
Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon CarbideZimmermann, U. / Domeij, M. / Hallen, A. / Ostling, M. et al. | 2004
- 1041
-
4H-SiC p-n Diode using Internal Ring (IR) Termination TechniqueSong, G. H. / Kim, H. W. / Bahng, W. / Kim, S. C. / Kim, N. K. et al. | 2004
- 1045
-
Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS RectifiersRang, T. / Higelin, G. / Kurel, R. et al. | 2004
- 1049
-
Influence of H~2 Pre-Treatment on Ni/4H-SiC Schottky Diode PropertiesYamamoto, Y. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2004
- 1053
-
The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN DiodesHefner, A. / McNutt, T. / Berning, D. / Singh, R. / Akuffo, A. et al. | 2004
- 1057
-
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC SubstrateStrel chuk, A. M. / Lebedev, A. A. / Kuznetsov, A. N. / Savkina, N. S. / Soloviev, V. A. et al. | 2004
- 1061
-
High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC MesasSpry, D. J. / Trunek, A. J. / Neudeck, P. G. et al. | 2004
- 1065
-
Electrical Properties of pn Diodes on 4H-SiC(0001) C-Face and (1120) FaceTanaka, Y. / Kojima, K. / Suzuki, T. / Hayashi, T. / Fukuda, K. / Yatsuo, T. / Arai, K. et al. | 2004
- 1069
-
Avalanche Multiplication and Breakdown in 4H-SiC DiodesNg, B. K. / David, J. P. R. / Massey, D. J. / Tozer, R. C. / Rees, G. J. / Yan, F. / Zhao, J. H. / Weiner, M. et al. | 2004
- 1073
-
Investigation of Rapid Thermal Annealed pn-Junctions in SiCRambach, M. / Weiss, R. / Frey, L. / Bauer, A. J. / Ryssel, H. et al. | 2004
- 1077
-
Ballistic Electron Emission Microscopy Study of p-Type 4H-SiCDing, Y. / Park, K. B. / Pelz, J. P. / Los, A. V. / Mazzola, M. S. et al. | 2004
- 1081
-
Defect Influence on the Electrical Properties of 4H-SiC Schottky DiodesScaltrito, L. / Celasco, E. / Porro, S. / Ferrero, S. / Giorgis, F. / Pirri, C. F. / Perrone, D. / Meotto, U. / Mandracci, P. / Richieri, G. et al. | 2004
- 1085
-
Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical PropertiesIzumi, S. / Kamata, I. / Tawara, T. / Fujisawa, H. / Tsuchida, H. et al. | 2004
- 1089
-
Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n DiodesBludov, A. V. / Boltovets, M. S. / Vassilevski, K. V. / Zorenko, A. V. / Zekentes, K. / Lebedev, A. A. / Krivutsa, V. A. et al. | 2004
- 1093
-
Bulk SiC Devices for High Radiation EnvironmentsCunningham, W. / Cooke, M. / Melone, J. / Horn, M. / Kazukauskas, V. / Roy, P. / Doherty, F. / Glaser, M. / Vaitkus, J. / Rahman, M. et al. | 2004
- 1097
-
2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling DiodesLi, Y. / Fursin, L. / Wu, J. / Alexandrov, P. / Zhao, J. H. et al. | 2004
- 1101
-
Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN DiodesSankin, I. / Draper, W. A. / Merrett, J. N. / Casady, J. R. B. / Casady, J. B. et al. | 2004
- 1105
-
High Power 4H-SiC PiN Diodes with Minimal Forward Voltage DriftDas, M. K. / Sumakeris, J. J. / Paisley, M. J. / Powell, A. et al. | 2004
- 1109
-
4,308V, 20.9 mOmega-cm^2 4H-SiC MPS Diodes Based on a 30mum Drift LayerWu, J. / Fursin, L. / Li, Y. / Alexandrov, P. / Zhao, J. H. et al. | 2004
- 1113
-
Approaches to Stabilizing the Forward Voltage of Bipolar SiC DevicesSumakeris, J. J. / Das, M. / Hobgood, H. M. / Muller, S. G. / Paisley, M. J. / Ha, S. / Skowronski, M. / Palmour, J. W. / Carter, C. H. et al. | 2004
- 1117
-
Extrinsic Base Design of SiC Bipolar TransistorsDanielsson, E. / Domeij, M. / Zetterling, C. M. / Ostling, M. / Schoner, A. et al. | 2004
- 1121
-
Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm^2 Power Density Handling AbilityPerez-Wurfl, I. / Torvik, J. / Van Zeghbroeck, B. et al. | 2004
- 1125
-
Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction TransistorsDynefors, K. / Desmaris, V. / Eriksson, J. / Nilsson, P. A. / Rorsman, N. / Zirath, H. et al. | 2004
- 1129
-
Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO ThyristorBrosselard, P. / Zorngiebel, V. / Planson, D. / Scharnholz, S. / Chante, J. P. / Spahn, E. / Raynaud, C. / Lazar, M. et al. | 2004
- 1133
-
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al ImplantationStrel chuk, A. M. / Lebedev, A. A. / Davydov, D. V. / Savkina, N. S. / Kuznetsov, A. N. / Valakh, M. Y. / Kiselev, V. S. / Romanyuk, B. N. / Raynaud, C. / Chante, J. P. et al. | 2004
- 1137
-
The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control ApplicationsZhao, J. H. / Zhang, J. / Luo, Y. / Hu, X. / Li, Y. / Yu, H. / Lai, J. / Alexandrov, P. / Fursin, L. / Li, X. et al. | 2004
- 1141
-
SiC BJT Technology for Power Switching and RF ApplicationsAgarwal, A. / Ryu, S. H. / Capell, C. / Richmond, J. / Palmour, J. / Bartlow, H. / Chow, P. / Scozzie, S. / Tipton, W. / Baynes, S. et al. | 2004
- 1145
-
Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTsIvanov, P. A. / Levinshtein, M. E. / Agarwal, A. K. / Palmour, J. W. / Ryu, S. H. et al. | 2004
- 1149
-
High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction TransistorsZhang, J. / Alexandrov, P. / Zhao, J. H. et al. | 2004
- 1153
-
Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge CircuitsMazzola, M. S. / Casady, J. B. / Merrett, N. / Sankin, I. / Draper, W. / Seale, D. / Bondarenko, V. / Koshka, Y. / Gafford, J. / Kelley, R. et al. | 2004
- 1157
-
1,530V, 17.5mOmega cm^2 Normally-Off 4H-SiC VJFET Design, Fabrication and CharacterizationFursin, L. / Li, X. / Zhao, J. H. et al. | 2004
- 1161
-
4,340V, 40 mOmega cm^2 Normally-Off 4H-SiC VJFETZhao, J. H. / Fursin, L. / Alexandrov, P. / Li, X. / Weiner, M. et al. | 2004
- 1165
-
A 500V, Very High Current Gain (beta=1517) 4H-SiC Bipolar Darlington TransistorZhang, J. / Alexandrov, P. / Zhao, J. H. et al. | 2004
- 1169
-
A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain beta>640 and Tested in a Half-Bridge Inverter up to 20A at V~B~u~s=900VZhao, J. H. / Zhang, J. / Alexandrov, P. / Burke, T. et al. | 2004
- 1173
-
A High Voltage (1,750V) and High Current Gain (beta=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 mum) Drift layerZhao, J. H. / Zhang, J. / Alexandrov, P. / Li, X. / Burke, T. et al. | 2004
- 1177
-
Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETsKerlain, A. / Morvan, E. / Dua, C. / Caillas, N. / Brylinski, C. et al. | 2004
- 1181
-
Fabrication and Characterization of 4H-SiC Planar MESFET using Ion-ImplantationNa, H. J. / Kim, D. H. / Jung, S. Y. / Song, I. B. / Um, M. Y. / Song, H. K. / Jeong, J. K. / Lee, J. B. / Kim, H. J. et al. | 2004
- 1185
-
Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating SubstratesGassoumi, M. / Sghaier, N. / Dermoul, I. / Chekir, F. / Maaref, H. / Bluet, J. M. / Guillot, G. / Morvan, E. / Noblanc, O. / Dua, C. et al. | 2004
- 1189
-
600V 4H-SiC RESURF-Type JFETFujikawa, K. / Harada, S. / Ito, A. / Kimoto, T. / Matsunami, H. et al. | 2004
- 1193
-
Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFETLos, A. V. / Mazzola, M. S. / Kajfez, D. / McDaniel, B. T. / Smith, C. E. / Kretchmer, J. / Rowland, L. B. / Casady, J. B. et al. | 2004
- 1197
-
Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiCLi, X. / Zhao, J. H. et al. | 2004
- 1201
-
Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power SwitchFriedrichs, P. / Elpelt, R. / Schorner, R. / Mitlehner, H. / Stephani, D. et al. | 2004
- 1205
-
RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating SubstratesSriram, S. / Ward, A. / Janke, C. / Alcorn, T. / Hagleitner, H. / Henning, J. / Wieber, K. / Jenny, J. / Sumakeris, J. / Allen, S. et al. | 2004
- 1209
-
High frequency measurements and simulations of SiC MESFETs up to 250 deg CLiu, W. / Zetterling, C.M. / Östling, M. / Eriksson, J. / Rorsman, N. / Zirath, H. et al. | 2004
- 1209
-
High Frequency Measurements and Simulations of SiC MESFETs up to 250^oCLiu, W. / Zetterling, C. M. / Ostling, M. / Eriksson, J. / Rorsman, N. / Zirath, H. et al. | 2004
- 1213
-
6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETsZhao, J. H. / Tone, K. / Li, X. / Alexandrov, P. / Fursin, L. / Weiner, M. et al. | 2004
- 1217
-
A 600V Deep-Implanted Gate Vertical JFETMizukami, M. / Takikawa, O. / Murooka, M. / Imai, S. / Kinoshita, K. / Hatakeyama, T. / Tsukuda, M. / Saito, W. / Omura, I. / Shinohe, T. et al. | 2004
- 1221
-
Single Contact-Material MESFETs on 4H-SiCTanimoto, S. / Inada, M. / Kiritani, N. / Hoshi, M. / Okushi, H. / Arai, K. et al. | 2004
- 1225
-
DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect TransistorsJonsson, R. / Wahab, Q. / Rudner, S. et al. | 2004
- 1229
-
Investigation of the Scalability of 4H-SiC MESFETs for High Frequency ApplicationsRorsman, N. / Nilsson, P. A. / Eriksson, J. / Andersson, K. / Zirath, H. et al. | 2004
- 1233
-
The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si DevicesAdachi, K. / Ohashi, H. / Arai, K. et al. | 2004
- 1237
-
Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiCMartinez, A. / Hjelm, M. / Nilsson, H. E. / Lindefelt, U. et al. | 2004
- 1241
-
Edge Termination Technique for SiC Power DevicesKim, H. W. / Bahng, W. / Song, G. H. / Kim, S. C. / Kim, N. K. / Kim, E. D. et al. | 2004
- 1245
-
BIFET - a Novel Bipolar SiC Switch for High Voltage Power ElectronicsMitlehner, H. / Friedrichs, P. / Elpelt, R. / Dohnke, K. O. / Schorner, R. / Stephani, D. et al. | 2004
- 1249
-
A Review of SiC Power Switch: Achievements, Difficulties and PerspectivesSankin, I. / Merrett, J. N. / Draper, W. A. / Casady, J. R. B. / Casady, J. B. et al. | 2004
- 1253
-
A Highly Effective Edge Termination Design for SiC Planar High Power DevicesPerez, R. / Mestres, N. / Blanque, S. / Tournier, D. / Jorda, X. / Godignon, P. / Nipoti, R. et al. | 2004
- 1257
-
Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiCWang, X. / Cooper, J. A. et al. | 2004
- 1263
-
The SiC-SiO~2 Interface: a Unique Advantage of SiC as a Wide Energy-Gap MaterialDimitrijev, S. et al. | 2004
- 1269
-
A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC WaferSenzaki, J. / Goto, M. / Kojima, K. / Yamabe, K. / Fukuda, K. et al. | 2004
- 1275
-
Recent Advances in (0001) 4H-SiC MOS Device TechnologyDas, M. K. et al. | 2004
- 1281
-
Characterizations of SiC/SiO~2 Interface Quality Towards High Power MOSFETs RealizationZiane, D. / Bluet, J. M. / Guillot, G. / Godignon, P. / Monserrat, J. / Ciechonski, R. / Syvajarvi, M. / Yakimova, R. / Chen, L. / Mawby, P. et al. | 2004
- 1287
-
Hall Effect Measurements in SiC Buried-Channel MOS DevicesSaks, N. S. / Ryu, S. H. et al. | 2004
- 1293
-
First-Principles Study of O Adsorption at SiC SurfaceRurali, R. / Wachowicz, E. / Ordejon, P. / Godignon, P. / Rebollo, J. / Hyldgaard, P. et al. | 2004
- 1297
-
Interface States in Abrupt SiO~2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C ClustersOhnuma, T. / Tsuchida, H. / Jikimoto, T. et al. | 2004
- 1301
-
Investigation of SiO~2/SiC Interface using Positron Annihilation TechniqueMaekawa, M. / Kawasuso, A. / Yoshikawa, M. / Ichimiya, A. et al. | 2004
- 1305
-
A Comparison between SiO~2/4H-SiC Interface Traps on (0001) and (1120) FacesOlafsson, H. O. / Hallin, C. / Sveinbjornsson, E. O. et al. | 2004
- 1309
-
Interface Properties of 4H-SiC/SiO~2 with MOS Capacitors and FETs Annealed in O~2, N~2O, NO and CO~2Wang, W. / Banerjee, S. / Chow, T. P. / Gutmann, R. J. / Issacs-Smith, T. / Williams, J. / Jones, K. A. / Lelis, A. / Tipton, W. / Scozzie, S. et al. | 2004
- 1313
-
Initial Oxidation of 6H-SiC (0001) (√3 x √3)-R30^o and 3 x 3 Surfaces Studied by AES and RHEEDAoyama, T. / Voegeli, W. / Ichimiya, A. / Hisada, Y. / Mukainakano, S. et al. | 2004
- 1317
-
Initial Stages of Thermal Oxidation of 4H-SiC (1120) Studied by Photoelectron SpectroscopySeyller, T. / Emtsev, K. V. / Graupner, R. / Ley, L. et al. | 2004
- 1321
-
Oxidation Studies of Non-Polar 4H-SiC SurfacesVirojanadara, C. / Johansson, L. I. et al. | 2004
- 1325
-
Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron RadiationRoy, J. / Silly, M. G. / Enriquez, H. / Soukiassian, P. / Crotti, C. / Fontana, S. / Perfetti, P. et al. | 2004
- 1329
-
A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N~2OJohansson, L. I. / Virojanadara, C. / Eickhoff, T. / Drube, W. et al. | 2004
- 1333
-
Radical Nitridation of Ultra-Thin SiO~2/SiC StructureYano, H. / Furumoto, Y. / Niwa, T. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. et al. | 2004
- 1337
-
Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiCChen, L. / Guy, O. J. / Pope, G. / Teng, K. S. / Maffeis, T. / Wilks, S. P. / Mawby, P. A. / Jenkins, T. / Brieva, A. / Hayton, D. J. et al. | 2004
- 1341
-
Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic OxidationHijikata, Y. / Yaguchi, H. / Ishida, Y. / Yoshikawa, M. / Kamiya, T. / Yoshida, S. et al. | 2004
- 1345
-
Diluted Nitric Oxide (NO) Annealing of SiO~2/4H-SiC in Cold-Wall Oxidation FurnaceKosugi, R. / Fukuda, K. et al. | 2004
- 1349
-
Thermal Oxidation of 4H-Silicon using the Afterglow MethodHoff, A. M. / Oborina, E. / Saddow, S. E. / Savtchouk, A. et al. | 2004
- 1353
-
Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical MethodsMikami, H. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2004
- 1357
-
Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion ImplantationPoggi, A. / Nipoti, R. / Solmi, S. / Bersani, M. / Vanzetti, L. et al. | 2004
- 1361
-
Electronic Properties of SiON/HfO~2 Insulating Stacks on 4H-SiC (0001)Afanas ev, V. V. / Campbell, S. A. / Cheong, K. Y. / Ciobanu, F. / Dimitrijev, S. / Pensl, G. / Stesmans, A. / Zhong, L. et al. | 2004
- 1365
-
Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiCCheong, K. Y. / Dimitrijev, S. / Han, J. et al. | 2004
- 1369
-
Structural and Electronic Properties of the 6H-SiC(0001)/Al~2O~3 Interface Prepared by Atomic Layer DepositionSeyller, T. / Gao, K. / Ley, L. / Ciobanu, F. / Pensl, G. / Tadich, A. / Riley, J. D. / Leckey, R. C. G. et al. | 2004
- 1373
-
Development of Sol-Gel MgO Thin Films for SiC Insulation ApplicationsBondoux, C. / Prene, P. / Belleville, P. / Guillet, F. / Jerisian, R. et al. | 2004
- 1377
-
Effect of In Situ Chemical Surface Treatments on AlN/SiC Interfacial ContaminationStodilka, D. O. / Gila, B. P. / Abernathy, C. R. / Lambers, E. / Ren, F. / Pearton, S. J. et al. | 2004
- 1381
-
Comparison of the Electrical Channel Properties between Dry- and Wet-Oxidized 6H-SiC MOSFETs Investigated by Hall EffectLaube, M. / Pensl, G. / Lee, K. K. / Ohshima, T. et al. | 2004
- 1385
-
Development of 10 kV 4H-SiC Power DMOSFETsRyu, S. H. / Agarwal, A. / Krishnaswami, S. / Richmond, J. / Palmour, J. et al. | 2004
- 1389
-
Static and Dynamic Characterization of 20A, 600V SiC MOS-Enhanced JFETHanna, E. / Chang, H. R. / Radun, A. V. / Zhang, Q. / Gomez, M. et al. | 2004
- 1393
-
Self-Aligned Short-Channel Vertical Power DMOSFETs in 4H-SiCMatin, M. / Saha, A. / Cooper, J. A. et al. | 2004
- 1397
-
Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation AnnealingKosugi, R. / Kiritani, N. / Suzuki, K. / Yatsuo, T. / Adachi, K. / Fukuda, K. et al. | 2004
- 1401
-
A P-Channel MOSFET on 4H-SiCHan, J. S. / Cheong, K. Y. / Dimitrijev, S. / Laube, M. / Pensl, G. et al. | 2004
- 1405
-
Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiCOhshima, T. / Lee, K. K. / Ishida, Y. / Kojima, K. / Tanaka, Y. / Takahashi, T. / Yoshikawa, M. / Okumura, H. / Arai, K. / Kamiya, T. et al. | 2004
- 1409
-
4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)Kaido, J. / Kimoto, T. / Suda, J. / Matsunami, H. et al. | 2004
- 1413
-
930, 170Omega.cm^2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO AnnealingWang, W. / Banerjee, S. / Chow, T. P. / Gutmann, R. J. et al. | 2004
- 1413
-
930V, 170m omega.cm2 lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealingWang, W. / Banerjee, S. / Chow, T.P. / Gutmann, R.J. et al. | 2004
- 1417
-
4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm^2/VsFukuda, K. / Kato, M. / Senzaki, J. / Kojima, K. / Suzuki, T. et al. | 2004
- 1421
-
Fabrication of 4H-SiC Double-Epitaxial MOSFETsHarada, S. / Okamoto, M. / Yatsuo, T. / Adachi, K. / Suzuki, K. / Suzuki, S. / Fukuda, K. / Arai, K. et al. | 2004
- 1425
-
Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N~2O)Gudjonsson, G. / Olafsson, H. O. / Sveinbjornsson, E. O. et al. | 2004
- 1429
-
High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (1120) Face by Oxidation in N~2O AmbientKanzaki, Y. / Kinbara, H. / Kosugi, H. / Suda, J. / Kimoto, T. / Matsunami, H. et al. | 2004
- 1433
-
Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETsWright, N. G. / Poolamai, N. / Vassilevski, K. V. / Horsfall, A. B. / Johnson, C. M. et al. | 2004
- 1437
-
Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 KLee, H. S. / Koo, S. M. / Zetterling, C. M. / Danielsson, E. / Domeij, M. / Ostling, M. et al. | 2004
- 1441
-
Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETsRashid, S. J. / Mihaila, A. / Udrea, F. / Malhan, R. K. / Amaratunga, G. et al. | 2004
- 1445
-
SiC JMOSFETs for High-Temperature Stable Circuit OperationKoo, S. M. / Zetterling, C. M. / Lee, H. S. / Ostling, M. et al. | 2004
- 1451
-
Advanced Processing Techniques for Silicon Carbide MEMS and NEMSZorman, C. A. / Mehregany, M. et al. | 2004
- 1457
-
Microscopic Structure and Electrical Activity of 4H-SiC/SiO~2 Interface Defects: an EPR Study of Oxidized Porous SiCvon Bardeleben, H. J. / Cantin, J. L. / Shishkin, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2004
- 1463
-
Porous Silicon Carbide as a Membrane for Implantable BiosensorsRosenbloom, A. J. / Shishkin, Y. / Sipe, D. M. / Ke, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2004
- 1467
-
Triangular Pore Formation in Highly Doped n-Type 4H SiCShishkin, Y. / Choyke, W. J. / Devaty, R. P. et al. | 2004
- 1471
-
Porous Structure of Anodized p-Type 6H SiCShishkin, Y. / Ke, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2004
- 1475
-
Vibrational and Emission Properties of Porous 6H-SiCRossi, A. M. / Ballarini, V. / Ferrero, S. / Giorgis, F. et al. | 2004
- 1479
-
Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal StabilityBai, J. / Dhanaraj, G. / Gouma, P. / Dudley, M. / Mynbaeva, M. et al. | 2004
- 1483
-
SiC Base Micro-Probe for Myocardial Ischemia MonitoringPascual, J. / Valvo, F. / Godignon, P. / Aguilo, J. / Millan, J. / Camassel, J. / Mestres, N. et al. | 2004
- 1487
-
Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN DiodesWolborski, M. / Bakowski, M. / Klamra, W. et al. | 2004
- 1491
-
Demonstration of the First 4H-SiC Metal-Semiconductor-Metal Ultraviolet PhotodectorWu, Z. / Xin, X. / Yan, F. / Zhao, J. H. et al. | 2004
- 1495
-
Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp TerminationBrezeanu, G. / Godignon, P. / Dimitrova, E. / Raynaud, C. / Planson, D. / Mihaila, A. / Udrea, F. / Millan, J. / Amaratunga, G. / Boianceanu, C. et al. | 2004
- 1499
-
Hydrogen Gas Sensors using 3C-SiC/Si Epitaxial LayersFawcett, T. J. / Wolan, J. T. / Myers, R. L. / Walker, J. / Saddow, S. E. et al. | 2004
- 1503
-
Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial LayersLe Donne, A. / Binetti, S. / Acciarri, M. / Castaldini, A. / Nava, F. / Cavallini, A. / Pizzini, S. et al. | 2004
- 1507
-
Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate ElectrodeNakagomi, S. / Takahashi, M. / Kokubun, Y. / Uneus, L. / Savage, S. / Wingbrant, H. / Andersson, M. / Lundstrom, I. / Lofdahl, M. / Spetz, A. L. et al. | 2004
- 1511
-
Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded SubstratesMyers, R. L. / Saddow, S. E. / Rao, S. / Hobart, K. D. / Fatemi, M. / Kub, F. J. et al. | 2004
- 1515
-
Formation of 3C-SiC Films Embedded in SiO~2 by Sacrificial OxidationPanknin, D. / Godignon, P. / Mestres, N. / Polychroniadis, E. / Stoemenos, J. / Ferro, G. / Pezoldt, J. / Skorupa, W. et al. | 2004
- 1519
-
Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection TechniqueFu, X. A. / Dunning, J. / Zorman, C. A. / Mehregany, M. et al. | 2004
- 1523
-
Characterization of Polycrystalline SiC Thin Films for MEMS Applications using Surface Micromachined DevicesDunning, J. / Fu, X. A. / Rajgopal, S. / Mehregany, M. / Zorman, C. A. et al. | 2004
- 1527
-
Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin FilmRajanna, K. / Tanaka, S. / Itoh, T. / Esashi, M. et al. | 2004
- 1531
-
Fabrication of Suspended Nanomechanical Structures from Bulk 6H-SiC SubstratesHuang, X. M. H. / Feng, X. L. / Prakash, M. K. / Kumar, S. / Zorman, C. A. / Mehregany, M. / Roukes, M. L. et al. | 2004
- 1537
-
Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth RateEpelbaum, B. M. / Bickermann, M. / Winnacker, A. et al. | 2004
- 1537
-
Sublimation growth of bulk AIN crystals: process temperature and growth rateEpelbaum, B.M. / Bickermann, M. / Winnacker, A. et al. | 2004
- 1541
-
Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVTBickermann, M. / Epelbaum, B. M. / Winnacker, A. et al. | 2004
- 1545
-
Experimental and theoretical analysis of sublimation growth of bulk AIN crystalsMokhov, E. / Smirnov, S. / Segal, A. / Bazarevskiy, D. / Makarov, Y. / Ramm, M. / Helava, H. et al. | 2004
- 1545
-
Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN CrystalsMokhov, E. / Smirnov, S. / Segal, A. / Bazarevskiy, D. / Makarov, Y. / Ramm, M. / Helava, H. et al. | 2004
- 1549
-
X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH~3YingShen, L. / Hashimoto, S. / Abe, K. / Hayashibe, R. / Yamagami, T. / Nakao, M. / Kamimura, K. et al. | 2004
- 1553
-
Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) SubstratesShen, X. Q. / Okumura, H. et al. | 2004
- 1557
-
Growth of GaN/AlN Quantum Dots on SiC (0001) by Plasma-Assisted MBEGogneau, N. / Fossard, F. / Monroy, E. / Monnoye, S. / Mank, H. / Daudin, B. et al. | 2004
- 1561
-
Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC EpilayersFounta, S. / Gogneau, N. / Martinez-Guerrero, E. / Ferro, G. / Monteil, Y. / Daudin, B. / Mariette, H. et al. | 2004
- 1565
-
In Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a PyrometerSuzuki, T. / Inushima, T. et al. | 2004
- 1569
-
Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam EpitaxyOnojima, N. / Kaido, J. / Suda, J. / Kimoto, T. / Matsunami, H. et al. | 2004
- 1573
-
Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBEMonroy, E. / Sarigiannidou, E. / Fossard, F. / Enjalbert, F. / Gogneau, N. / Bellet-Amalric, E. / Brault, J. / Rouviere, J. L. / Dang, L. S. / Monnoye, S. et al. | 2004
- 1577
-
Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC SubstratesFossard, F. / Brault, J. / Gogneau, N. / Monroy, E. / Enjalbert, F. / Dang, L. S. / Bellet-Amalric, E. / Monnoye, S. / Mank, H. / Daudin, B. et al. | 2004
- 1581
-
GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase EpitaxyNapierala, J. / Martin, D. / Buhlmann, H. J. / Gradecak, S. / Ilegems, M. et al. | 2004
- 1585
-
Growth and Field Emission of GaN NanowiresKim, T. Y. / Lee, S. H. / Mo, Y. H. / Nahm, K. S. et al. | 2004
- 1589
-
Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC SubstratesHelman, A. / Tchernycheva, M. / Moumanis, K. / Lusson, A. / Warde, E. / Julien, F. / Monroy, E. / Fossard, F. / Daudin, B. / Dang, L. S. et al. | 2004
- 1593
-
Photoluminescence of GaN/AlN Quantum Dots Grown on SiC SubstratesFossard, F. / Gogneau, N. / Monroy, E. / Dang, L. S. / Monnoye, S. / Mank, H. / Daudin, B. et al. | 2004
- 1597
-
Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor DepositionJeong, J. K. / Song, H. K. / Um, M. Y. / Kim, H. J. / Seo, H. C. / Yoon, E. / Hwang, C. S. et al. | 2004
- 1601
-
X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiCPoust, B. / Feichtinger, P. / Sandhu, R. / Smorchkova, I. / Heying, B. / Block, T. / Wojtowicz, M. / Goorsky, M. et al. | 2004
- 1605
-
Effects of Crystallinity on Hydrogen Exfoliation of GaN LayersHayashi, S. / Poust, B. / Heying, B. / Goorsky, M. S. et al. | 2004
- 1609
-
Radiotracer Spectroscopy or Group II Acceptors in GaNAlbrecht, F. / Pasold, G. / Grillenberger, J. / Reislohner, U. / Witthuhn, M. D. W. / ISOLDE Collaboration et al. | 2004
- 1613
-
Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking FaultsSkromme, B. J. / Chen, L. / Mikhov, M. K. / Yamane, H. / Aoki, M. / DiSalvo, F. J. et al. | 2004
- 1617
-
An Ab Initio Study of Intrinsic Stacking Faults in GaNIwata, H. P. / Oberg, S. / Briddon, P. R. et al. | 2004
- 1621
-
AlGaN / GaN HEMT Structures Grown on SiCOI Wafers Obtained by the Smart Cut™ TechnologyLarheche, H. / Faure, B. / Richtarch, C. / Letertre, F. / Langer, R. / Bove, P. et al. | 2004
- 1625
-
Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V MeasurementsAubry, R. / Jacquet, J. C. / Dua, C. / Gerard, H. / Dessertenne, B. / di Forte-Poisson, M. A. / Cordier, Y. / Delage, S. L. et al. | 2004
- 1629
-
High CW Power 0.3 mum Gate AlGaN/GaN HEMTs Grown by MBE on SapphireDesmaris, V. / Eriksson, J. / Rorsman, N. / Zirath, H. et al. | 2004
- 1633
-
Self-Aligned N+ Polysilicon-Gate GaN MOSFETsMatocha, K. / Chow, T. P. / Gutmann, R. J. et al. | 2004
- vii
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Preface| 2004
-
Overview| 2004
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Sponsors| 2004
-
Committees| 2004