Vertically Integrated Amorphous Silicon Particle Sensors (Englisch)
- Neue Suche nach: Wyrsch, N.
- Neue Suche nach: Miazza, C.
- Neue Suche nach: Dunand, S.
- Neue Suche nach: Shah, A.
- Neue Suche nach: Moraes, D.
- Neue Suche nach: Anelli, G.
- Neue Suche nach: Despeisse, M.
- Neue Suche nach: Jarron, P.
- Neue Suche nach: Dissertori, G.
- Neue Suche nach: Viertel, G.
- Neue Suche nach: Materials Research Society
- Neue Suche nach: Wyrsch, N.
- Neue Suche nach: Miazza, C.
- Neue Suche nach: Dunand, S.
- Neue Suche nach: Shah, A.
- Neue Suche nach: Moraes, D.
- Neue Suche nach: Anelli, G.
- Neue Suche nach: Despeisse, M.
- Neue Suche nach: Jarron, P.
- Neue Suche nach: Dissertori, G.
- Neue Suche nach: Viertel, G.
- Neue Suche nach: Ganguly, Gautam
- Neue Suche nach: Materials Research Society
In:
Amorphous and nanocrystalline silicon-based films; Amorphous and nanocrystalline silicon science and technology--2004: symposium held April 13-16, 2004, San Francisco, California, U.S.A. /
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441-446
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2004
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Vertically Integrated Amorphous Silicon Particle Sensors
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Beteiligte:Wyrsch, N. ( Autor:in ) / Miazza, C. ( Autor:in ) / Dunand, S. ( Autor:in ) / Shah, A. ( Autor:in ) / Moraes, D. ( Autor:in ) / Anelli, G. ( Autor:in ) / Despeisse, M. ( Autor:in ) / Jarron, P. ( Autor:in ) / Dissertori, G. ( Autor:in ) / Viertel, G. ( Autor:in )
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Kongress:Symposium, Amorphous and nanocrystalline silicon-based films; Amorphous and nanocrystalline silicon science and technology--2004: symposium held April 13-16, 2004, San Francisco, California, U.S.A. / ; 2004 ; San Francisco, CA
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Erschienen in:MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 808 ; 441-446
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Verlag:
- Neue Suche nach: Materials Research Society
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Erscheinungsort:Warrendale, Pa.
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Erscheinungsdatum:01.01.2004
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Format / Umfang:6 pages
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Anmerkungen:Held as Symposium A of the 2004 MRS Spring meeting. " ... Symposium A, 'Amorphous and Nanocrystalline Silicon Science and Technology--2004,' [was] held April 13-16 at the 2004 MRS Spring Meeting in San Francisco, California ..."--p. xix. Includes bibliographical references and indexes.
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 5
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Si Wire Light Emission Changes During Si/SiO~x Interface FormationBecerril-Espinoza, F. G. / Torchynska, T. V. / Rodriguez, M. M. / Khomenkova, L. / Scherbina, L. V. / Materials Research Society et al. | 2004
- 11
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Fabrication and Characterization of a Germanium Quantum-Dot Transistor Formed by Selective Oxidation of SiGe/Si-on-InsulatorLiao, W. M. / Lin, S. W. / Tseng, S. S. / Lin, C. K. / Kuo, M. T. / Li, P. W. / Materials Research Society et al. | 2004
- 17
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Understanding the Structure of Si Nanoclusters in a/nc-Si:H Films Using Spherical Aberration-Corrected Transmission Electron MicroscopyPerrey, C. R. / Thompson, S. S. / Lentzen, M. / Kortshagen, U. / Carter, C. B. / Materials Research Society et al. | 2004
- 23
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Correlation Between Surface Charge Accumulation and Excitation Intensity Dependent Red-Shifted Micro-Photoluminescence of Si-Implanted Quartz With Embedded Si NanocrystalsLin, C.-J. / Yu, K.-C. / Kuo, H.-C. / Ou-yang, M.-J. / Lin, G.-R. / Materials Research Society et al. | 2004
- 29
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About the Luminescence Mechanisms of Composite a-Si:nc-Si System Obtained by Ion-Beam Amorphization in the Wide Dose RegionTetelbaum, D. I. / Ezhevskii, A. A. / Mikhaylov, A. N. / Lebedev, M. Y. / Mendeleva, Y. A. / Ershov, R. G. / Morozov, S. V. / Materials Research Society et al. | 2004
- 35
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Buffer-Layer Effect on Mixed-Phase Cells Studied by Micro-Raman and Photoluminescence SpectroscopyHilchey, A. / Lawyer, C. / Wang, K. / Han, D. / Yan, B. / Yue, G. / Yang, J. / Guha, S. / Materials Research Society et al. | 2004
- 41
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Metastability in Undoped Microcrystalline Silicon Thin Films Deposited by HWCVDPersheyev, S. K. / O Neill, K. A. / Anthony, S. / Rose, M. J. / Smirnov, V. / Reynolds, S. / Materials Research Society et al. | 2004
- 47
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The Influence of Light-Soaking and Atmospheric Adsorption on Microcrystalline Silicon Films Studied by Coplanar Transient PhotoconductivitySmirnov, V. / Reynolds, S. / Finger, F. / Main, C. / Carius, R. / Materials Research Society et al. | 2004
- 53
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Identification of Possible Bonding Sites for Post Deposition Oxygen Absorption in Microcrystalline SiliconGedvilas, L. M. / Mahan, A. H. / Materials Research Society et al. | 2004
- 59
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Correlation of Hydrogenated Nanocrystalline Silicon Microstructure and Solar Cell PerformanceWang, K. / Canning, A. / Weinberg-Wolf, J. R. / Harley, E. C. T. / Han, D. / Yan, B. / Yue, G. / Yang, J. / Guha, S. / Materials Research Society et al. | 2004
- 65
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H Evolution From Nano-Crystalline Silicon-Comparison of Simulation and ExperimentBiswas, R. / Pan, B. C. / Materials Research Society et al. | 2004
- 73
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Hydrogen in Silicon and Germanium: Impurity Activation and Dopant PassivationHaller, E. E. / Materials Research Society et al. | 2004
- 85
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Influence of the Distribution of Tail States in a-Si:H on the Field Dependence of Carrier Drift MobilitiesBrinza, M. / Emelianova, E. V. / Stesmans, A. / Adriaenssens, G. J. / Materials Research Society et al. | 2004
- 97
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Femtosecond Far-Infrared Studies of Photoconductivity in a-Si:H and a-SiGe:HNampoothiri, A. V. V. / Dexheimer, S. L. / Materials Research Society et al. | 2004
- 103
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Extension of the Constant Photocurrent Method to Determine Densities of Occupied and Unoccupied Localized StatesMain, C. / Reynolds, S. / Zrinscak, I. / Merazga, A. / Materials Research Society et al. | 2004
- 109
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Hole Drift-Mobility Measurements and Multiple-Trapping in Microcrystalline SiliconDylla, T. / Finger, F. / Schiff, E. A. / Materials Research Society et al. | 2004
- 115
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Electronic Properties of RF Glow Discharge Intrinsic Microcrystalline Silicon Near the Amorphous Silicon Phase BoundaryGutierrez, J. J. / Halverson, A. F. / Tweeten, E. D. / Cohen, J. D. / Yan, B. / Yang, J. C. / Guha, S. / Materials Research Society et al. | 2004
- 121
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Transient and Modulated Photoconductivity in Microcrystalline SiliconBruggemann, R. / Longeaud, C. / Kleider, J. P. / Materials Research Society et al. | 2004
- 127
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Interpretation of Transient Photocurrents in Coplanar and Sandwich PIN Microcrystalline Silicon StructuresReynolds, S. / Smirnov, V. / Main, C. / Finger, F. / Carius, R. / Materials Research Society et al. | 2004
- 133
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Electric-Field Dependence of Photocarrier Properties in the Steady-State Photocarrier Grating ExperimentBruggemann, R. / Badran, R. I. / Materials Research Society et al. | 2004
- 141
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Metastable Defects in a-Si:H and a-Ge:H: The Role of HydrogenSu, T. / Taylor, P. C. / Whitaker, J. / Materials Research Society et al. | 2004
- 153
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Evolution of D^0 and Non-D^0 Light Induced Defect States in a-Si:H Materials and Their Respective Contribution to Carrier RecombinationPearce, J. M. / Deng, J. / Vlahos, V. / Collins, R. W. / Wronski, C. R. / Whitaker, J. / Taylor, P. C. / Materials Research Society et al. | 2004
- 159
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Tritium Induced Defects in Amorphous SiliconWhitaker, J. / Viner, J. / Zukotynski, S. / Johnson, E. / Taylor, P. C. / Stradins, P. / Materials Research Society et al. | 2004
- 165
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Study of 3-MeV Electron Irradiation Damage in Amorphous Silicon With TRMCKlaver, A. / Warman, J. M. / de Haas, M. P. / Metselaar, J. W. / van Swaaij, R. A. C. M. M. / Materials Research Society et al. | 2004
- 171
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Reversible Ordering of a-Si~1~-~xGe~x by the Combined Effect of Light and TemperatureMartin, P. / Torres, A. / Jimenez, J. / Rodriguez, A. / Sangrador, J. / Rodriguez, T. / Materials Research Society et al. | 2004
- 177
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Absence of Enhanced Stability in Deuterated Amorphous Silicon Thin Film TransistorsLin, S. / Flewitt, A. J. / Milne, W. I. / Wehrspohn, R. B. / Powell, M. J. / Materials Research Society et al. | 2004
- 183
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Are the Current Models Helpful to Understanding Staebler-Wronski Degradation?von Roedern, B. / Materials Research Society et al. | 2004
- 189
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The Role of Charged Gap States in Light-Induced Degradation of Single-Junction a-Si:H Solar CellsZeman, M. / Nadazdy, V. / Metselaar, J. W. / Materials Research Society et al. | 2004
- 199
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Surface Processes During Growth of Hydrogenated Amorphous SiliconAydil, E. S. / Agarwal, S. / Valipa, M. / Sriraman, S. / Maroudas, D. / Materials Research Society et al. | 2004
- 209
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In Situ Observation of Silicon Epitaxy Breakdown With Real-Time Spectroscopic EllipsometryTeplin, C. W. / Levi, H. / Wang, Q. / Iwaniczko, E. / Jones, K. M. / Branz, H. M. / Materials Research Society et al. | 2004
- 215
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Comparison of Phase Diagrams for vhf and rf Plasma-Enhanced Chemical Vapor Deposition of Si:H FilmsFerreira, G. M. / Ferlauto, A. S. / Pearce, J. M. / Wronski, C. R. / Ross, C. / Collins, R. W. / Materials Research Society et al. | 2004
- 221
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Phase Diagram and Microstructure of Microcrystalline and Amorphous Silicon: A Numerical Growth SimulationBailat, J. / Vallat-Sauvain, E. / Vallat, A. / Shah, A. / Materials Research Society et al. | 2004
- 227
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A Phase Diagram for Morphology and Properties of Low Temperature Deposited Polycrystalline Silicon Grown by Hot-Wire Chemical Vapor DepositionRichardson, C. E. / Mason, M. S. / Atwater, H. A. / Materials Research Society et al. | 2004
- 233
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Roughness Evolution of High-Rate Deposited a-SiN~x:H Films Studied by Atomic Force Microscopy and Real Time Spectroscopic Ellipsometryvan den Oever, P. J. / van de Sanden, M. C. M. / Kessels, W. M. M. / Materials Research Society et al. | 2004
- 239
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Materials and Interface Optimization of Heterojunction Silicon (HIT) Solar Cells Using In Situ Real-Time Spectroscopic EllipsometryLevi, D. H. / Teplin, C. W. / Iwaniczko, E. / Ahrenkiel, R. K. / Branz, H. M. / Page, M. R. / Yan, Y. / Wang, Q. / Wang, T. H. / Materials Research Society et al. | 2004
- 245
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Enhanced Surface Diffusion in Low-Temperature a-Si:H ProcessingDalakos, G. T. / Plawsky, J. L. / Persans, P. D. / Materials Research Society et al. | 2004
- 251
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Effects of Facet Growth and Nucleation on Microcrystalline Silicon by Numerical ModelKobayashi, Y. / Satake, K. / Materials Research Society et al. | 2004
- 257
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New Ultrahigh Vacuum Setup and Advanced Diagnostic Techniques for Studying a-Si:H Film Growth by Radical BeamsHoefnagels, J. P. M. / Langereis, E. / van de Sanden, M. C. M. / Kessels, W. M. M. / Materials Research Society et al. | 2004
- 265
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Excimer-Laser Growth of Si Large-Grain ArraysMatsumura, M. / Materials Research Society et al. | 2004
- 277
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Location Control of Crystal Grains in Excimer Laser Crystallization of Silicon Thin Films for Single-Grain TFTsKumomi, H. / Wakiyama, H. / Nakagawa, G. / Makihira, K. / Asano, T. / Materials Research Society et al. | 2004
- 283
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Formation of Periodic Grain Boundary in an Si Thin Film Crystallized by a Linearly Polarized Nd:YAG Pulse Laser With an Ultra Sonic OscillatorKaki, H. / Ootani, T. / Horita, S. / Materials Research Society et al. | 2004
- 289
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Silicon-Hydrogen Bonds in Boron and Phosphorous Doped Polycrystalline Silicon Thin FilmsSaleh, R. / Nickel, N. H. / Materials Research Society et al. | 2004
- 297
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Modeling of Aluminum Induced Lateral Crystallization of Hydrogenated Amorphous SiliconAbbasi, M. S. / Abu-Safe, H. / Naseem, H. / Brown, W. D. / Materials Research Society et al. | 2004
- 303
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Aluminum-Induced Crystallization of PECVD Amorphous SiliconJenq, K. / Chang, S. S. / Lian, Y. / Pan, G. Z. / Rahmat-Samii, Y. / Materials Research Society et al. | 2004
- 309
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Initial Interaction of Crystalline Al/Amorphous Si Bilayer During AnnealingZhao, Y. / Wang, J. / Mittemeijer, E. J. / Materials Research Society et al. | 2004
- 315
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The Effect of Substrate Temperature and Interface Oxide Layer on Aluminum Induced Crystallization of Sputtered Amorphous SiliconHossain, M. / Abu-Safe, H. / Barghouti, M. / Naseem, H. / Brown, W. D. / Materials Research Society et al. | 2004
- 321
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In Situ Aluminum-Induced Crystallization of Si Thin-Films on Glass Substrates Above the Eutectic Temperature Using HW-CVDEbil, O. / Aparicio, R. / Birkmire, R. / Materials Research Society et al. | 2004
- 327
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Solar Cells on Foreign Substrates Using Poly-Si Thin Films by Metal Induced GrowthJi, C. / Anderson, W. A. / Materials Research Society et al. | 2004
- 333
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Metal Induced Crystallization of SiGe at 370^oC for Monolithically Integrated MEMS ApplicationsSedky, S. / Baert, K. / Van Hoof, C. / Wang, Y. / Van Der Biest, O. / Witvrouw, A. / Materials Research Society et al. | 2004
- 339
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CW Argon-Ion Laser Initiated Aluminum Induced Crystallization of Amorphous Silicon Thin FilmsPaduru, S. K. / Abu-safe, H. H. / Naseem, H. A. / Al-Shariah, A. / Brown, W. D. / Materials Research Society et al. | 2004
- 347
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Reel-to-Reel Cassette Cluster Tool System for Thin Film Transistor and Four Terminal Solar Cell FabricationMadan, A. / Materials Research Society et al. | 2004
- 359
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Hydrogen Injection in ETP Plasma Jet for Fast-Deposition of High-Quality a-Si:HPetit, A. M. H. N. / van Swaaij, R. A. C. M. M. / van de Sanden, M. C. M. / Materials Research Society et al. | 2004
- 365
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Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition TechniqueSoukup, R. J. / Ianno, N. J. / Darveau, S. A. / Exstrom, C. L. / Materials Research Society et al. | 2004
- 371
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Low-Temperature Silicon Films Deposition by Pulsed Cathodic Arc Process for Microsystem TechnologiesXia, H. / Yang, Y. / Bergstrom, P. L. / Materials Research Society et al. | 2004
- 377
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Growth and Characterization of Poly-SiGe Prepared by Reactive Thermal CVDZhang, J. / Shimizu, K. / Hanna, J.-i. / Materials Research Society et al. | 2004
- 383
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External rf Substrate Biasing During a-Si:H Film Growth Using the Expanding Thermal Plasma TechniqueSmets, A. H. M. / Kessels, W. M. M. / van de Sanden, M. C. M. / Materials Research Society et al. | 2004
- 389
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Structural and Electronic Properties of SiCl~4-Based Microcrystalline Silicon FilmsBeyer, W. / Carius, R. / Lejeune, M. / Zastrow, U. / Materials Research Society et al. | 2004
- 395
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Growth of Hydrogenated Microcrystalline Silicon (muc-Si:H) Films by HWCVD Using a Graphite CatalyzerBhusari, D. M. / Kumar, P. / Kupich, M. / Schroeder, B. / Materials Research Society et al. | 2004
- 401
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Influence of Catalyzer Area and Design on the Growth of Intrinsic Hot-Wire CVD Thin-Film Silicon for Photovoltaic ApplicationsKupich, M. / Grunsky, D. / Hofferberth, B. / Schroder, B. / Materials Research Society et al. | 2004
- 407
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Deposition of Optimal a-Si:H and a-SiGe:H by HWCVD Using the Same Filament Temperature and Substrate TemperatureMahan, A. H. / Xu, Y. / Gedvilas, L. M. / Materials Research Society et al. | 2004
- 413
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An Investigation of Silicon Oxide Thin Film by Atomic Layer DepositionLee, J.-H. / Han, C.-H. / Kim, U.-J. / Park, C.-O. / Rha, S.-K. / Lee, W.-J. / Materials Research Society et al. | 2004
- 419
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High-Quality Hydrogen-Diluted a-SiN~x:H Films Deposited by Hot-Wire Chemical Vapor DepositionLiu, F. / Gedvilas, L. / Keyes, B. / Sanchez, E. / Wang, S. / Wang, Q. / Materials Research Society et al. | 2004
- 425
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Protocrystalline Silicon at High Rate from Undiluted SilaneSchropp, R. E. I. / van Veen, M. K. / van der Werf, C. H. M. / Williamson, D. L. / Mahan, A. H. / Materials Research Society et al. | 2004
- 435
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Suppression of Staebler-Wronski Effect Induced Electrical Crosstalk in a-Si:H-Based Image SensorsTheil, J. A. / Materials Research Society et al. | 2004
- 441
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Vertically Integrated Amorphous Silicon Particle SensorsWyrsch, N. / Miazza, C. / Dunand, S. / Shah, A. / Moraes, D. / Anelli, G. / Despeisse, M. / Jarron, P. / Dissertori, G. / Viertel, G. et al. | 2004
- 447
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Amorphous Silicon Backplane With Polymer MEMS Structures for Electrophoretic DisplaysDaniel, J. H. / Krusor, B. S. / Chopra, N. / Street, R. A. / Kazmaier, P. M. / Ready, S. E. / Ho, J. H. / Materials Research Society et al. | 2004
- 453
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MEMS Microresonators Based on Nanocrystalline SiliconGaspar, J. / Adrega, T. / Chu, V. / Conde, J. P. / Materials Research Society et al. | 2004
- 459
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Increase of Temperature and Crystallinity During Electrical Switching in Microcrystalline SiliconHu, J. / Stradins, P. / Branz, H. M. / Wang, Q. / Weinberg-Wolf, J. R. / Harley, E. C. T. / Lawyer, C. / Huie, B. / Han, D. / Materials Research Society et al. | 2004
- 465
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Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous SiliconStradins, P. / Branz, H. M. / Jackson, W. B. / Crandall, R. S. / Hu, J. / Wang, Q. / Materials Research Society et al. | 2004
- 471
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Development of a Porous Silicon Product for Small Molecule Mass SpectrometryCredo, G. / Hewitson, H. / Benevides, C. / Bouvier, E. S. P. / Materials Research Society et al. | 2004
- 477
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Amorphous Si~1~-~yGe~y:H, F Films Obtained by Low Frequency PECVD for Uncooled MicrobolometersAmbrosio, R. / Torres, A. / Kosarev, A. / Abramov, A. S. / Heredia, A. / Landa, M. / Garcia, M. / Materials Research Society et al. | 2004
- 483
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High Current Density in muc-Si PECVD Diodes for Low Temperature ApplicationsBeck, P. A. / Nickel, J. H. / Hartwell, P. G. / Materials Research Society et al. | 2004
- 489
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Evaluation of an Alternative Technique for the Fabrication of Direct Detector X-ray Imagers: Spray Pyrolysis of Lead Iodide and Mercury IodideCondeles, J. F. / Ugucioni, J. C. / Mulato, M. / Materials Research Society et al. | 2004
- 495
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Two Terminal Large Area Single and Double p-i-n Devices for Image and Color RecognitionLouro, P. / Vieira, M. / Fantoni, A. / Fernandes, M. / de Carvalho, C. N. / Lavareda, G. / Materials Research Society et al. | 2004
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A Real-Time Optical Signal and Image Processing p-i-n/p-i-n DeviceVieira, M. / Louro, P. / Fernandes, M. / Fantoni, A. / Mendes, C. / Martins, J. / Materials Research Society et al. | 2004
- 507
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Detection Limits of a nip a-Si:H Linear Array Position Sensitive DetectorMartins, R. / Costa, D. / Aguas, H. / Soares, F. / Marques, A. / Ferreira, I. / Borges, P. / Fortunato, E. / Materials Research Society et al. | 2004
- 513
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Performance Analysis of a-Si:H Detectors Deposited on CMOS ChipsMiazza, C. / Dunand, S. / Wyrsch, N. / Shah, A. / Blanc, N. / Kaufmann, R. / Cavalier, L. / Materials Research Society et al. | 2004
- 521
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Amorphous and Microcrystalline Silicon-Based PhotovoltaicGuha, S. / Materials Research Society et al. | 2004
- 533
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Amorphous Silicon Based Solar Cell Technologies: Status, Challenges, and OpportunitiesArya, R. R. / Materials Research Society et al. | 2004
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The Status of and Challenges in CdTe Thin-Film Solar-Cell TechnologyCompaan, A. D. / Materials Research Society et al. | 2004
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High-Rate Plasma Process for Microcrystalline Silicon: Over 9% Efficiency Single Junction Solar CellsMatsui, T. / Matsuda, A. / Kondo, M. / Materials Research Society et al. | 2004
- 569
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Defect Densities, Diffusion Lengths and Device Physics in Nanocrystalline Si:H Solar CellsDalal, V. L. / Sharma, P. / Staab, D. / Noack, M. / Han, K. / Materials Research Society et al. | 2004
- 575
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Microstructure Evolution With Thickness and Hydrogen Dilution Profile in Microcrystalline Silicon Solar CellsYan, B. / Yue, G. / Yang, J. / Guha, S. / Williamson, D. L. / Han, D. / Jiang, C.-S. / Materials Research Society et al. | 2004
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Large-Area Hydrogenated Amorphous and Microcrystalline Silicon Double-Junction Solar CellsYan, B. / Yue, G. / Banerjee, A. / Yang, J. / Guha, S. / Materials Research Society et al. | 2004
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Measurement of the Electric Potential on Amorphous Silicon and Amorphous Silicon Germanium Alloy Thin-Film Solar Cells by Scanning Kelvin Probe MicroscopyJiang, C.-S. / Moutinho, H. R. / Wang, Q. / Al-Jassim, M. M. / Yan, B. / Yang, J. / Guha, S. / Materials Research Society et al. | 2004
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Microcrystalline Silicon Solar Cell Deposited Using Modified Very-High-Frequency Glow Discharge and Its Application in Multi-Junction StructuresYue, G. / Yan, B. / Owens, J. M. / Yang, J. / Guha, S. / Materials Research Society et al. | 2004
- 599
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Development of Transparent Conductive Oxide Materials for Improved Back Reflector Performance for Amorphous Silicon Based Solar CellsJones, S. J. / Tsu, D. / Liu, T. / Steele, J. / Capangpangan, R. / Izu, M. / Materials Research Society et al. | 2004
- 605
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Dominant Effect of p/i Interface on Dark J-V Characteristics in p-i-n Nano-Crystalline Si Solar CellsDas, U. / Bozsa, A. / Madan, A. / Materials Research Society et al. | 2004
- 611
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Evaluation of Ar-Diluted Silane PECVD for Thin Film Si:H Based Solar CellsSelvan, J. A. A. / Li, Y.-M. / Li, L. / Delahoy, A. E. / Materials Research Society et al. | 2004
- 617
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Devices Fabrication With Narrow-Bandgap a-SiGe:H Alloys Deposited by HWCVDXu, Y. / Yan, B. / Nelson, B. P. / Iwaniczko, E. / Reedy, R. C. / Mahan, A. H. / Branz, H. / Materials Research Society et al. | 2004
- 623
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Characterization of the Bulk Recombination in Hydrogenated Amorphous Silicon Solar CellsDeng, J. / Pearce, J. M. / Vlahos, V. / Collins, R. W. / Wronski, C. R. / Materials Research Society et al. | 2004
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Surface Potential and Surface Photovoltage of Oxide and Nitride Coated Multicrystalline Silicon Solar Cells Using a Scanning Kelvin ProbeBaikie, I. D. / Materials Research Society et al. | 2004
- 637
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A Simple Explanation on the Crystallization Kinetics of a CW Laser Crystallization of Amorphous SiliconPark, S. J. / Kang, S. H. / Ku, Y. M. / Jang, J. / Materials Research Society et al. | 2004
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100-nm Channel Length a-Si:H Vertical Thin Film TransistorsChan, I. / Nathan, A. / Materials Research Society et al. | 2004
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Temperature Dependent Carrier Transport in Single-Crystalline Si TFTs Inside a Location-Controlled GrainRana, V. / Ishihara, R. / Hiroshima, Y. / Abe, D. / Inoue, S. / Shimoda, T. / Metselaar, J. W. / Beenakker, C. I. M. / Materials Research Society et al. | 2004
- 655
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Gate Overlapped Lightly Doped Drain Poly-Si TFTs Employing 45^o Tilt Implant for Source and DrainLee, J.-H. / Shin, M.-Y. / Shin, H. / Nam, W.-J. / Han, M.-K. / Materials Research Society et al. | 2004
- 661
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Accelerated Stress Testing of a-Si:H TFTs for AMOLED DisplaysSakariya, K. / Ng, C. K. M. / Huang, I.-H. / Sultana, A. / Tao, S. / Nathan, A. / Materials Research Society et al. | 2004
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The p-Channel a-Si:H Thin Film Transistor With Plasma Etched Copper ElectrodesNominanda, H. / Liu, G. / Lee, H. H. / Kuo, Y. / Materials Research Society et al. | 2004
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Statistical Modeling of Grain-Enhanced Polysilicon Thin-Film Transistor in Consideration of Grain Boundary DistributionCheng, C. F. / Poon, M. C. / Kok, C. W. / Chan, M. / Materials Research Society et al. | 2004
- 679
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Intrinsic and Doped muc-Si:H TFT Layers Using 13.56 MHz PECVD at 250^oCLee, C.-H. / Striakhilev, D. / Nathan, A. / Materials Research Society et al. | 2004
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Low Temperature (<150^oC) Doping Techniques for Polysilicon TFT'sHong, W. S. / Kim, J. M. / Han, S. H. / Lee, Y. H. / Kim, Y. W. / Lee, S. H. / Kim, D. Y. / Materials Research Society et al. | 2004
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Low Temperature (75^oC) Hydrogenated Nanocrystalline Silicon Films Grown by Conventional Plasma Enhanced Chemical Vapor Deposition for Thin Film TransistorsLee, C.-H. / Sazonov, A. / Nathan, A. / Materials Research Society et al. | 2004
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Low Temperature a-Si:H TFTs With a SiO~2 Gate Insulator Deposited by Liquid Phase DepositionCross, R. B. M. / Oxley, D. P. / Manhas, M. / Narayanan, E. M. S. / Materials Research Society et al. | 2004
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Monolithically Integrated p- and n-Channel Thin Film Transistors of Nanocrystalline Silicon on Plastic SubstratesCheng, I.-C. / Wagner, S. / Materials Research Society et al. | 2004
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Fabrication and Characterization of Hydrogenated Amorphous Silicon Bipolar Thin Film Transistor (B-TFT)Kuo, Y. / Lei, Y. / Nominanda, H. / Materials Research Society et al. | 2004
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Bottom-Gate TFTs With Channel Layer Grown by Pulsed PECVD TechniqueGrant, D. J. / Lee, C.-H. / Nathan, A. / Das, U. K. / Madan, A. / Materials Research Society et al. | 2004
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Development of Top-Gate Nanocrystalline Si:H Thin Film TransistorsMcDonald, J. / Dalal, V. L. / Noack, M. / Materials Research Society et al. | 2004