0.15 mum In~0~.~4GaAs/In~0~.~4AlAs Metamorphic HEMTs (M-HEMTs) Using a Novel Triple Shaped Gate Structure Assisted by PMGI Resist (Englisch)
- Neue Suche nach: Kim, D.-H.
- Neue Suche nach: Kim, S.-J.
- Neue Suche nach: Lee, J.-H.
- Neue Suche nach: Chung, K.-W.
- Neue Suche nach: Seo, K.-S.
- Neue Suche nach: Kim, D.-H.
- Neue Suche nach: Kim, S.-J.
- Neue Suche nach: Lee, J.-H.
- Neue Suche nach: Chung, K.-W.
- Neue Suche nach: Seo, K.-S.
In:
Compound semiconductor manufacturing technology
;
47-50
;
2004
-
ISBN:
- Aufsatz (Konferenz) / Print
-
Titel:0.15 mum In~0~.~4GaAs/In~0~.~4AlAs Metamorphic HEMTs (M-HEMTs) Using a Novel Triple Shaped Gate Structure Assisted by PMGI Resist
-
Beteiligte:Kim, D.-H. ( Autor:in ) / Kim, S.-J. ( Autor:in ) / Lee, J.-H. ( Autor:in ) / Chung, K.-W. ( Autor:in ) / Seo, K.-S. ( Autor:in )
-
Kongress:19th:; International conference, Compound semiconductor manufacturing technology ; 2004 ; Miami Beach, Fla
-
Erschienen in:
-
Verlag:
- Neue Suche nach: GaAs Mantech,
-
Erscheinungsdatum:01.01.2004
-
Format / Umfang:4 pages
-
ISBN:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
-
State of the Compound Semiconductor IndustryQuinsey, R. et al. | 2004
- 7
-
Integrated Microsystems: The Next Technology TransitionLemnios, Z. J. / Zolper, J. C. et al. | 2004
- 11
-
High Bandwidth Devices: Faster Materials versus Nanoscaled Si and SiGeWoodall, J. M. et al. | 2004
- 15
-
Transition of SiC MESFET Technology from Discrete Transistors to High Performance MMIC TechnologyMilligan, J. W. / Henning, J. / Allen, S. T. / Ward, A. / Parikh, P. / Smith, R. P. / Saxler, A. / Wu, Y. / Palmour, J. W. et al. | 2004
- 19
-
A "Snapshot" of AlGaN/GaN HEMT State-of-the-TechnologyVia, G. D. / Binari, S. C. / Judy, D. et al. | 2004
- 23
-
High Performance GaN HEMTs on 3-inch SI-SiC SubstratesBoutros, K. S. / Regan, M. / Rowell, P. / Gotthold, D. / Brar, B. et al. | 2004
- 25
-
GaN HFET Digital Circuit TechnologyHussain, T. / Micovic, M. / Tsen, T. / Delaney, M. / Chow, D. / Schmitz, A. / Hashimoto, P. / Wong, D. / Moon, J. S. / Hu, M. et al. | 2004
- 29
-
Diamond - A New Materials Base for Future Ultra High Power RF ElectronicsKohn, E. / Aleksov, A. / Kubovic, M. / Schmid, P. / Kusterer, J. / Schreck, M. / Kasu, M. et al. | 2004
- 35
-
A Field Plate Device by Self-Aligned Spacer ProcessLan, E. / Klingbeil, S. / Fisher, P. / Green, B. / Li, P. / Hartin, O. / Weitzel, C. / Johnson, E. / De Baca, M. C. / Le, H. et al. | 2004
- 39
-
Sub 100nm T-Gate Uniformity in InP HEMT TechnologyMoran, D. A. J. / Boyd, E. / McEwan, F. / McLelland, H. / Stanley, C. R. / Thayne, I. G. et al. | 2004
- 43
-
Interlayer and Intershot Charging-Induced Pattern Distortion on GaAs Substrates Exposed with a High Throughput Shaped Beam Electron Beam Lithography SystemBross, A. / Davis, R. / Toyama, T. / Beene, J. et al. | 2004
- 47
-
0.15 mum In~0~.~4GaAs/In~0~.~4AlAs Metamorphic HEMTs (M-HEMTs) Using a Novel Triple Shaped Gate Structure Assisted by PMGI ResistKim, D.-H. / Kim, S.-J. / Lee, J.-H. / Chung, K.-W. / Seo, K.-S. et al. | 2004
- 47
-
0.15 micron In0.4GaAs/In0.4AlAs metamorphic HEMT's (M-HEMT's) using a novel triple shaped gate structure assisted by PMGI resistKim, Dae-Hyun / Kim, Suk-Jin / Lee, Jae-Hak / Chung, Ki-Woong / Seo, Kwang-Seok et al. | 2004
- 51
-
Cost Effective T-Gate Process for PHEMT-Based MMIC with Large Gate PeripheryHadad, B. / Toledo, I. / Bunin, G. / Kaplun, J. / Leibovitch, M. / Shapira, Y. / Knafo, Y. et al. | 2004
- 57
-
Commercial Applications for GaAs Millimeter Wave MMICsBrehm, G. E. / Green, D. L. / Mowatt, L. J. et al. | 2004
- 61
-
Development and Transition-to-Production of a High-Volume Ka-Band SATCOM Outdoor Unit (ODU) Transmit ModuleAlm, R. et al. | 2004
- 65
-
0.1 mum InP HEMT MMIC Fabrication on 100 mm Wafers for Low Cost, High Performance Millimeter-Wave ApplicationsUyeda, J. / Grundbacher, R. / Lai, R. / Umemoto, D. / Liu, P.-H. / Barsky, M. / Cavus, A. / Lee, L. J. / Chen, J. / Gonzalez, J. et al. | 2004
- 69
-
Manufacturable AlSb/InAs HEMT Technology for Ultra-Low Power Millimeter Wave Integrated CircuitsTsai, R. / Grundbacher, R. / Lange, M. / Boos, J. B. / Bennett, B. R. / Nam, P. / Lee, L. J. / Barsky, M. / Namba, C. / Padmanabhan, K. et al. | 2004
- 75
-
Transfer of GaAs PHEMT Technologies from Infineon to TriQuintMahoney, G. / Abshere, T. / Alava, K. / Avrit, B. / Berger, O. / Berggren, B. / Brindza, D. / Brophy, M. / Chan, R. / Grave, T. et al. | 2004
- 79
-
Manufacturing Excellence, Still Achievable in the USPope, T. et al. | 2004
- 83
-
The Implementation of Autonomous Maintenance (Part 1 of the Total Productive Manufacturing Experience)Day, J. / Troy, D. / Heller, D. et al. | 2004
- 87
-
Manufacturing Excellence in a Compound Semiconductor Fabrication FacilityHuang, E. / Dell, C. / Ploeger, J. et al. | 2004
- 91
-
A DOE Approach to Product Qualification for Linear Handset Power AmplifiersZampardi, P. J. / Nelson, D. / Zhu, P. / Lou, C. / Rohlfing, S. / Jayapalan, A. et al. | 2004
- 97
-
An Over 100 W CW Output Power Amplifier Using AlGaN/GaN HEMTsKikkawa, T. / Mitani, E. / Joshin, K. / Yokokawa, S. / Tateno, Y. et al. | 2004
- 101
-
Manufacturable GaN HEMT RF Power Technology for Wireless Infrastructure ApplicationsGrider, D. / Smart, J. / Vetury, R. / Young, M. / Green, D. / Gibb, S. / Palmer, C. / Hosse, B. / Musclow, D. / Mercier, T. et al. | 2004
- 103
-
Low Noise - High Power GaN HEMT Technology for Mixed Mode ApplicationsQuach, T. / Fitch, R. C. / Gillespie, J. / Jenkins, T. / Neidhard, R. / Nykiel, E. B. / Via, G. D. / Watson, P. / Wiedemann, J. et al. | 2004
- 107
-
Development of a GaN Transistor Process for Linear Power ApplicationsHanson, A. W. / Borges, R. / Brown, J. D. / Cook, J. W. / Gehrke, T. / Johnson, J. W. / Linthicum, K. / Peters, S. / Piner, E. / Rajagopal, P. et al. | 2004
- 111
-
Balanced AlGaN/GaN-HFET Amplifier Based on 111-Silicon SubstrateNeuburger, M. / Kunze, M. / Daumiller, I. / Zimmermann, T. / Dadgar, A. / Krost, A. / Hettich, S. / Gruson, F. / Schumacher, H. / Kohn, E. et al. | 2004
- 117
-
A 0.5 mum InGaP Etch Stop Power pHEMT Process Utilizing Multi-Level High Density InterconnectsWohlmuth, W. A. / Liu, L. / Witkowski, L. / Morton, R. / Saeger, T. / Liebl, W. / Fredd, M. / Farias, D. / Struble, W. / Weichert, C. et al. | 2004
- 117
-
A 0.5-micron InGaP etch stop power pHEMT process utilizing multi-level high density interconnectsWohlmuth, Walter A. / Liu, Li / Witkowski, Larry / Morton, Rick / Saeger, Thorsten / Liebl, Wolfgang / Fredd, Mike / Farias, Domingo / Struble, Wayne / Weichert, Calvin et al. | 2004
- 121
-
Multiple Level Plated Gold Interconnect for III-V CircuitsLeslie, G. / Wang, J. / Nam, P. / Yamamoto, J. / Elmadjian, R. / Lee, L. J. / Sawdai, D. / Nguyen, D. / Mensa, D. / Uyeda, J. et al. | 2004
- 125
-
Copper Airbridged Low Noise GaAs pHEMT with WN~x as the Diffusion BarrierChu, L. H. / Chang, H. C. / Chang, E. Y. / Lien, Y. C. et al. | 2004
- 129
-
GaAs Surface Preparation for Thin Films Deposition Using Sodium HypochloriteBecker, C. M. / Ng, B. L.-Y. et al. | 2004
- 133
-
GaAs Corrosion under Ohmic Contacts by Electrochemical Oxidation in HBT Device FabricationShen, H. / Luu-Henderson, L. / O Neal, S. / Tiku, S. / Grayson, T. / Ramanathan, R. et al. | 2004
- 139
-
Characterization and Mapping of Crystal Defects in Silicon CarbideEmorhokpor, E. / Kerr, T. / Zwieback, I. / Elkington, W. T. / Dudley, M. / Anderson, T. A. / Chen, J. et al. | 2004
- 143
-
Interferometric Metrology for Thin and Ultra-Thin Compound Semiconductor Structures Mounted on Insulating CarriersWalecki, W. / Wei, F. / Van, P. / Lai, K. / Lee, T. / Lau, S. H. / Koo, A. et al. | 2004
- 147
-
Optical Characterization of Radio-Frequency Magnetron-Sputtered Gallium-Arsenide Films under Non-Uniform Thickness ConditionsZulkifi, T. Z. A. / Rode, D. L. / Ouyang, L. H. / Abraham-Shrauner, B. et al. | 2004
- 151
-
Contactless Electrical Characterization of HEMT Epitaxial Structures and DevicesSolodky, S. / Baksht, T. / Khramtsov, A. / Ortenberg, I. / Vazokha, M. / Leibovitch, M. / Hava, A. / Shapira, Y. et al. | 2004
- 155
-
Gate Electrode Formation Process Optimization in a GaAs FET DeviceCarpenter, C. / Shepard, C. / Stevenson, M. et al. | 2004
- 159
-
Device Zoo: A Smart Tool for Device Performance OptimizationKhramtsov, A. / Vazokha, M. / Solodky, S. / Baksht, T. / Ortenberg, I. / Stopel, A. / Leibovitch, M. / Bunin, G. / Hava, S. / Shapira, Y. et al. | 2004
- 163
-
A Novel Scheme for the Deposition and Spectroscopic Ellipsometry Characterization of PECVD, Silicon-Based, Dielectric Layers for Optoelectronic ApplicationsAgresta, D. / Nelson, T. et al. | 2004
- 167
-
GaAs HBT Wet Etch Process Using Reclaimed ChemicalsGhosh, M. / Xie, K. / Black, I. et al. | 2004
- 171
-
A Reproducible, High Yield, Robust Wet Chemistry Etch-Stop Process Using Organic Acid - Peroxide SolutionsSpooner, F. / Quinn, W. / Hanes, L. / Woolsey, S. / Smith, K. / Mason, J. / Kulkarni, V. et al. | 2004
- 175
-
High Temperature Resistant Adhesive for Wafer Thinning and Backside ProcessingMoore, J. / Smith, A. / Nguyen, D. / Kulkarni, S. et al. | 2004
- 179
-
Low-k Underfill Using Spray Coat TechnologyBrubaker, C. / Wimplinger, M. / Mittendorfer, G. / Thanner, C. et al. | 2004
- 183
-
Through-Wafer Via Etch Throughput Improvements in a GaAs Semiconductor DeviceCarpenter, C. / Woolsey, S. et al. | 2004
- 187
-
1/f Noise Characteristics and High-Frequency Noise Performance of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs pHEMTsHuang, C.-E. / Yen, H.-C. / Lee, C.-P. / Chang, M.-C. F. et al. | 2004
- 189
-
Noise and Large-Signal Characterization of a Thin Film MHEMT Feedback Amplifier in Multilayer MCM-D TechnologyVandersmissen, R. / Schreurs, D. / Dambrine, G. / Carchon, G. / Borghs, G. et al. | 2004
- 193
-
A System for High Current Density Reliability Testing of HBTs with In-situ MeasurementGrossman, P. C. / Hayashibara, K. / Kan, Q. / Oki, A. / Block, T. / Trucker, C. / Okamoto, R. / Cox, C. / Elliot, J. et al. | 2004
- 197
-
InAlAs/GaAsSb/InP DHBTs Grown by Production MBEZhu, H. J. / Kuo, J. M. / Pinsukanjana, P. / Jin, X. J. / Vargason, K. / Herrera, M. / Ontiveros, D. / Boehme, C. / Kao, Y. C. et al. | 2004
- 201
-
ECR Based Chemically Assisted Plasma Etching of GaAsBhardwaj, R. K. / Angra, S. K. / Bharadwaj, L. M. / Bajpai, R. P. et al. | 2004
- 205
-
Study of Reactive Ion Etching Process to Fabricate Reliable Via-Hole Ground Connections in GaAs MMICsRawal, D. S. / Agarwal, V. R. / Sharma, H. S. / Sehgal, B. K. / Gulati, R. / Vyas, H. P. et al. | 2004
- 209
-
Application of Electrical CD Measurement Methodology for InGaP/GaAs HBT ProductionYang, Y. / Hou, D. et al. | 2004
- 217
-
Thermal Management of High Power DevicesLaskar, J. / Nuttinck, S. / Pinel, S. et al. | 2004
- 221
-
Trends in RF & Wireless PackagingBock, K. / Wolf, J. / Reichl, H. et al. | 2004
- 225
-
RF SIP Technology: Integration and InnovationWu, J. / Coller, D. / Anderson, M. J. / Guth, G. et al. | 2004
- 229
-
Evaluation of High Temperature Overmold Compounds for Manufacturing of Laminate Based Leadfree System in PackageWasef, M. / Anderson, M. et al. | 2004
- 233
-
Plasma Etching of Thick BCB Polymer Films for Flip Chip Bonding of Hybrid Compound Semiconductor-Silicon DevicesAlmerico, J. / Ross, S. / Werbaneth, P. / Yang, J. / Garrou, P. et al. | 2004
- 239
-
Very Large Scale Electro-optical Device Process and Yield ChallengesFeingold, A. / Majer, D. / Arbel, A. / Grinman, A. / Altman, M. / Levy, J. / Shekel, E. et al. | 2004
- 243
-
Development of RM^3 Technology to Integrate P-i-N Photodiodes on Si-CMOS for Optical Clock DistributionAtmaca, E. / Teo, M. / Lei, Y.-S. V. / Khai, L. W. / Rumpler, J. J. / Perkins, J. M. / Fatt, Y. S. / Fonstad, C. G. et al. | 2004
- 247
-
Improvement of Wafer Bonding Processing for HB-LED with Low-Temperature-Grown Compound Semiconductors as Adhesive MaterialsChang, K. L. / Epple, J. H. / Pickrell, G. W. / Cheng, K. Y. / Hsieh, K. C. et al. | 2004
- 251
-
Toward the Development of Hybrid MEMS Tunable Optical Filters and LasersHarvey, M. C. / Ochoa, E. M. / Lott, J. A. / Nelson, T. R. et al. | 2004
- 255
-
MMIC Compatible High Performance Lateral Deflection RF MEMS SwitchesChang-Chien, P. / Stokes, R. / Bhorania, R. / Uyeda, J. / Truong, M. / Padmanabhan, K. / Kong, A. / Grundbacher, R. / Lai, R. / Oki, A. et al. | 2004
- 259
-
Characterization of Loading in the Plasma Etching of HgCdTe and Related II-VI Materials for Infrared Focal Plane Array FabricationVaresi, J. B. / Benson, J. D. / Stoltz, A. J. / Martinka, M. / Kaleczyc, A. W. / Almeida, L. A. / Boyd, P. R. / Dinan, J. H. et al. | 2004
- 265
-
X-ray of High Order Planes, Pathway for HBT ControlRehder, E. M. / Iyer, S. / Lutz, C. R. / Stevens, K. S. / Wolfsdorf-Brenner, T. L. / Welser, R. E. et al. | 2004
- 269
-
Junction Temperature and Thermal Resistance of Ultrafast Sub-micron InP/InGaAs SHBTsHafez, W. / Eden, R. / Dixon, F. / Feng, M. et al. | 2004
- 273
-
Application of IVS Overlay Measurement to Wafer Deformation Characterization StudyLiu, Y. / Black, I. et al. | 2004
- 277
-
Investigations on Initial Beta Drift during Reliability Test for MOCVD Grown C-Doped InGaP/GaAs HBTsRushing, L. / Luo, C. / Zampardi, P. / Landini, B. / Stevens, K. / Lutz, C. / Welser, R. et al. | 2004
- 281
-
Walkout in PHEMTs: Origin and Relation to Device StructureBaksht, T. / Solodky, S. / Khramtsov, A. / Vazokha, M. / Stopel, A. / Lusetsky, I. / Leibovitch, M. / Bunin, G. / Shapira, Y. et al. | 2004
- 287
-
Wide Bandgap Semiconductor Substrates: Current Status and Future TrendsBlevins, J. D. et al. | 2004
- 291
-
Sub-Surface Damage Removal in Fabrication & Polishing of Silicon CarbideMartin, C. / Kerr, T. M. / Stepko, W. / Anderson, T. et al. | 2004
- 295
-
Improvement of Substrate Related Uniformity of AlGaN/GaN HEMT Epi Wafers on φ3" Sapphire and SiC Substrates Grown by Multi-Charged Large MOVPE ReactorTanaka, T. / Koji, Y. / Meguro, T. / Otoki, Y. et al. | 2004
- 299
-
Reproducible and Highly Uniform Growth of GaN by MOCVD and MBEWojtowicz, M. / Heying, B. / Chen, P. / Smorchkova, I. / Sandhu, R. / Block, T. / Aumer, M. / Thomson, D. / Partlow, D. et al. | 2004
- 301
-
Migration Enhanced Metalorganic Chemical Vapor Deposition of AlN/GaN/InN Based HeterostructuresFareed, Q. / Gaska, R. / Mickevicious, J. / Tamulaitis, G. / Shur, M. / Khan, M. A. et al. | 2004
- 307
-
Uniform InP/InGaAs SHBT Fabrication using ICP Emitter Etching on 4-Inch WafersLee, S. / Fierro, J. / Nedeljkovic, S. / Weththasingha, A. / Nguyen, N. / Nguyen, C. et al. | 2004
- 311
-
Low Temperature High Density Highly Uniform Si~3N~4 Technology for Passive and Active Devices in MMMIC ApplicationsElgaid, K. / Zhou, H. / Wilkinson, C. D. W. / Thayne, I. G. et al. | 2004
- 315
-
Continuous Defectivity Improvements and Impact on High Density Metal-Insulator-Metal (HDMIM) Capacitor YieldsCotronakis, J. / Clarke, M. / Lawrence, R. / Campbell, J. / Gaw, C. et al. | 2004
- 319
-
Characterization & Optimization of Low Stress PECVD Silicon Nitride for Production GaAs ManufacturingMackenzie, K. D. / Reelfs, B. / DeVre, M. W. / Westerman, R. / Johnson, D. J. et al. | 2004
- 323
-
Oxygen Plasma Photoresist Strip in High Volume HBT ProductionWang, J. / Mony, S. / Ebrahimi, N. et al. | 2004
- 327
-
Novel Via Planarization Scheme for High Resolution Backside Wafer ProcessingKazemi, H. / Tran, L. / Xin, H. / Deakin, D. / Greer, J. / Hacker, J. et al. | 2004
- 333
-
Advanced InP Heterojunction Bipolar Transistors with Implanted SubcollectorFields, C. H. / Sokolich, M. / Chow, D. / Rajavel, R. / Chen, M. / Hitko, D. / Royter, Y. / Thomas, S. et al. | 2004
- 337
-
Narrow-Band-Gap-HBT Technology for Low-Power, High-Speed ApplicationsMonier, C. / Cavus, A. / Sandhu, R. S. / Lange, M. D. / Cheng, P. / Chan, B. / Sawdai, D. / Chang, P. C. / Gambin, V. F. / Oyama, B. et al. | 2004
- 341
-
Low Turn-On Voltage InGaP/GaAsSb/GaAs DHBT Grown by MOCVDHuang, C. H. / Chin, Y. C. / Jseng, M. N. / Lin, C. H. / Yang, M. H. T. et al. | 2004
- 345
-
Observations of Current Blocking in InP/GaAsSb DHBTsChu-Kung, B. F. / Shen, S.-C. / Hafez, W. / Feng, M. et al. | 2004
- 349
-
Recombination investigation of InGaP HBT'sHan, B.K. / Wibowo, A. / Tu, V. / Du, G. / Pan, N. et al. | 2004
- 349
-
Recombination Investigations of InGaP HBTsHan, B.-K. / Wibowo, A. / Tu, V. / Du, G. / Pan, N. et al. | 2004
- 353
-
C~b~c Reduction in Si-Implanted Subcollector HBTsSun, M. / Zampardi, P. J. / Tiku, S. / Lee, R. / Pierson, R. L. / Chen, M. Y. / Ho, M.-C. / Fitzsimmons, S. et al. | 2004