9:45 F-7-2 Top-Emission Inverted Organic Light-Emitting Diodes Using Aluminum Nitride as Buffer Layer (Englisch)
- Neue Suche nach: Tseng, C. C.
- Neue Suche nach: Juang, F. S.
- Neue Suche nach: Liu, T. S.
- Neue Suche nach: Tseng, C. C.
- Neue Suche nach: Juang, F. S.
- Neue Suche nach: Liu, T. S.
In:
Solid state devices and materials
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954-955
;
2005
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:9:45 F-7-2 Top-Emission Inverted Organic Light-Emitting Diodes Using Aluminum Nitride as Buffer Layer
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Beteiligte:
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Kongress:International conference, Solid state devices and materials ; 2005 ; Kobe, Japan
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Erschienen in:Solid state devices and materials ; 954-955SOLID STATE DEVICES AND MATERIALS ; 2005 ; 954-955
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Verlag:
- Neue Suche nach: Japan Society of Applied Physics
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Erscheinungsdatum:01.01.2005
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Format / Umfang:2 pages
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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10:20 PL-1 Development of Clinical Chips for Home Medical DiagnosticsHoriike, Y. / Oki, A. / Nagai, M. / Takai, M. / Chang, C. H. / Hisamoto, H. / Ogawa, H. et al. | 2005
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11:10 PL-2 Electronics and Optoelectronics with Single Carbon NanotubesAvouris, P. et al. | 2005
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13:30 A-1-1 Current Status and Addressing the Challenges of Hf-based Gate Stack toward 45nm-LSTP Application (Invited)Niwa, M. / Mitsuhashi, R. / Yamamoto, K. / Hayashi, S. / Harada, Y. / Rothchild, A. / Hoffmann, T. / Kubicek, S. / De Gendt, S. / Heyns, M. et al. | 2005
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14:00 A-1-2 The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOTMizutani, M. / Hayashi, T. / Inoue, M. / Yugami, J. / Nomura, K. / Tsuchimoto, J. / Ohno, Y. / Yoneda, M. et al. | 2005
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14:20 A-1-3 Extendibility of High Mobility HfSiON Gate DielectricsInumiya, S. / Miura, T. / Shirai, K. / Matsuki, T. / Torii, K. / Nara, Y. et al. | 2005
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14:40 A-1-4 Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectricsIijima, R. / Takayanagi, M. / Yamaguchi, T. / Koyama, M. / Nishiyama, A. et al. | 2005
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15:00 A-1-5 Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETsOta, H. / Ogawa, A. / Kadoshima, M. / Iwamoto, K. / Mizubayashi, W. / Okada, K. / Nabatame, T. / Satake, H. / Toriumi, A. et al. | 2005
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15:45 A-2-1 Physical Origin of Fast Transient Charging in Hafnium Based Gate DielectricsLee, B. H. / Choi, R. / Song, S. C. / Sim, J. / Young, C. D. / Bersuker, G. / Park, H. K. / Hwang, H. et al. | 2005
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16:05 A-2-2 Exact Trap Level Estimation of HfSiON Films with Various Atomic CompositionsKoike, M. / Ino, T. / Kamimuta, Y. / Mitani, Y. / Nishiyama, A. et al. | 2005
- 20
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16:25 A-2-3 Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiONHirano, I. / Yamaguchi, T. / Mitani, Y. / Iijima, R. / Sekine, K. / Takayanagi, M. / Eguchi, K. / Fukushima, N. et al. | 2005
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16:45 A-2-4 NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ALD-TiN Gate StacksKrishnan, S. A. / Quevedo, M. / Harris, R. / Kirsch, P. D. / Choi, R. / Lee, B. H. / Bersuker, G. / Peterson, J. / Li, H. J. / Young, C. et al. | 2005
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17:05 A-2-5 Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfacesKamimuta, Y. / Koyama, M. / Ino, T. / Sekine, K. / Sato, M. / Eguchi, K. / Takayanagi, M. / Tomita, M. / Nishiyama, A. et al. | 2005
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17:25 A-2-6 Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion StatesSato, M. / Aoyama, T. / Sekine, K. / Yamaguchi, T. / Hirano, I. / Eguchi, K. / Tsunashima, Y. et al. | 2005
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13:30 B-1-1 45nm Conventional Bulk and "Bulk+" Architectures for Low-Cost GP/LP Applications (Invited)Boeuf, F. / Monfray, S. / Pouydebasque, A. / Muller, M. / Payet, F. / Ortolland, C. / Skotnicki, T. et al. | 2005
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14:00 B-1-2 A 90nm Hybrid SOI CMOS Technology Integrating PDSOI and Bulk Devices for Bulk-designed MPU Performance BoosterMiyake, S. / Suzuki, T. / Watanabe, T. / Fujita, O. / Harada, N. / Doumeki, K. / Fukai, T. / Syo, T. / Moriya, T. / Haruta, S. et al. | 2005
- 32
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14:20 B-1-3 Combining Embedded and Overlayer Compressive Stressors in Advanced SOI CMOS TechnologiesWei, A. / Kammler, T. / Hontschel, J. / Bierstedt, H. / Biethan, J. P. / Hellmich, A. / Hempel, K. / Klais, J. / Koerner, G. / Lenski, M. et al. | 2005
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14:40 B-1-4 Effect of Process Induced Strain in 35 nm FDSOI Devices with Ultra-Thin Silicon ChannelsGallon, C. / Fenouillet-Beranger, C. / Denorme, S. / Boeuf, F. / Fiori, V. / Loubet, N. / Kormann, T. / Broekaart, M. / Gouraud, P. / Leverd, F. et al. | 2005
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15:00 B-1-5 Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETsTezuka, T. / Nakaharai, S. / Moriyama, Y. / Hirashita, N. / Sugiyama, N. / Tanabe, A. / Usuda, K. / Takagi, S. et al. | 2005
- 38
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15:45 B-2-1 Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETsTakagi, S. / Takeda, K. / Sugahara, S. / Numata, T. et al. | 2005
- 40
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16:05 B-2-2 Direct Measurement of Circuit Performance Enhancement under Mechanically Applied Uniaxial StrainMiyashita, T. / Tanaka, T. et al. | 2005
- 42
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16:25 B-2-3 Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETsIshihara, T. / Uchida, K. / Koga, J. / Takagi, S. et al. | 2005
- 44
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16:45 B-2-4 Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion LayerNakabayashi, Y. / Koga, J. / Ishihara, T. / Takagi, S. et al. | 2005
- 46
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17:05 B-2-5 Improvement of Mobility on Ultra-thin Body SOI MOSFETs by Use of High Pressure Hydrogen AnnealingSon, Y. / Rahman, M. S. / Im, K. / Chang, M. / Park, H. / Hwang, H. et al. | 2005
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17:25 B-2-6L Fully-depleted ultra narrow (∼10 nm) body Gate-All-Around CMOS transistorsSingh, N. / Agarwal, A. / Bera, L. K. / Fang, W. W. / Kumar, R. / Lo, G. Q. / Balasubramanian, N. / Kwong, D. L. et al. | 2005
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13:30 C-1-1 Cu/low-k Process integration for 65nm and 45nm SoC devices (Invited)Matsunaga, N. et al. | 2005
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14:00 C-1-2 Mechanical Strength of Multilayered Dielectric Structures Measured by Laser-Pulse Generated Surface-Acoustic-Wave TechniqueTakimura, T. / Hata, N. / Nakayama, T. / Shishida, Y. / Yagi, R. / Kawahara, J. / Chikaki, S. / Fujii, N. / Kikkawa, T. et al. | 2005
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14:20 C-1-3 Properties of Low-k (k ∼2.05) Plasma Polymer Films Deposited by PECVD Using Decamethylcyclopentasiloxane and Cyclohexane as the PrecursorsYang, J. / Lee, S. / Kim, K. / Jung, D. / Chae, H. et al. | 2005
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14:40 C-1-4 A Novel Short-time Characterization Method of SIV Properties by Using the Empirical EquationTakahashi, M. / Harada, T. / Mitsu, N. / Tsukamoto, K. / Ogawa, S. / Ueda, T. et al. | 2005
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15:00 C-1-5 Electrical Characteristics of Porous Zeolite Interlayer DielectricsYoshino, T. / Guan, G. / Hata, N. / Fujii, N. / Kikkawa, T. et al. | 2005
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16:05 C-2-1 Innovative A1 Damascene Process for Nanoscale InterconnectsChoi, K. I. / Han, S. H. / Yun, S. / Kim, D. Y. / Hong, J. W. / Lee, S. W. / Kim, B. H. / Kim, S. T. / Chung, U. I. / Moon, J. T. et al. | 2005
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16:25 C-2-2 Microstructural evolution of MIM capacitor prepared by ALD system at elevated temperatureLin, C. H. / Wang, C. C. / Tzeng, P. J. / Liang, C. S. / Lo, W. M. / Li, H. Y. / Lee, L. S. / Lo, S. C. / Chou, Y. W. / Tsai, M. J. et al. | 2005
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16:45 C-2-3 New Three-Dimensional Integration Technology Using Chip-to-Wafer Bonding to Achieve Ultimate Super Chip IntegrationFukushima, T. / Yamada, Y. / Kikuchi, H. / Koyanagi, M. et al. | 2005
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17:05 C-2-4 Characteristics of Silicon-on-Low-K Insulator (SOLK) MOSFET with Metal Back-GateYamada, Y. / Oh, H. / Sakaguchi, T. / Fukushima, T. / Koyanagi, M. et al. | 2005
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17:25 C-2-5 Integration Challenges for Carbon Nanotubes (Invited)Kreupl, F. / Liebau, M. / Seidel, R. / Graham, A. P. / Duesberg, G. S. / Unger, E. et al. | 2005
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13:30 D-1-1 Computational MEMS Process Design and Development (Invited)Tabata, O. et al. | 2005
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14:00 D-1-2 Piezoresistive Rotation Angle Sensor Integrated in MicromirrorSasaki, M. / Tabata, M. / Haga, T. / Hane, K. et al. | 2005
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14:15 D-1-3 A CMOS Image Sensor for in vitro and in vivo Imaging of the Mouse HippocampusNg, D. C. / Matsuo, M. / Tokuda, T. / Kagawa, K. / Nunoshita, M. / Tamura, H. / Shiosaka, S. / Ohta, J. et al. | 2005
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14:30 D-1-4 Photo-sensing Resolution of Unwired-communication Chip in Inhomogeneous RF-magnetic FieldHasebe, T. / Yazawa, Y. / Tase, T. / Kamahori, M. / Watanabe, K. / Oonishi, T. et al. | 2005
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14:45 D-1-5 Micro-Heater Array for Tunable Fiber-Bragg GratingSingh, V. K. / Sasaki, M. / Hane, K. / Okude, S. / Hosoya, H. et al. | 2005
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15:00 D-1-6 Thickness Effects on pH Response of HfO~2 Sensing Dielectric Improved by Rapid Thermal AnnealingLai, C. S. / Yang, C. M. / Lu, T. F. et al. | 2005
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15:15 D-1-7 Resonant Silicon Mass Sensor with Capacitive ReadoutKim, S. J. / Ono, T. / Esashi, M. et al. | 2005
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15:45 D-2-1 Programmable Self-Assembly Across the Micro and Nano Scales (Invited)Bohringer, K. F. et al. | 2005
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16:15 D-2-2 Integrated RF-MEMS Technology with Wafer-Level EncapsulationKuwabara, K. / Urano, M. / Kodate, J. / Sato, N. / Sakata, T. / Ishii, H. / Kamei, T. / Kudou, K. / Yano, M. / Machida, K. et al. | 2005
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16:30 D-2-3 Thinning technology for lithium niobate wafer by surface activated bonding and chemical mechanical polishingWu, C. C. / Horng, R. H. / Wuu, D. S. / Chen, T. N. / Ting, C. J. / Tsai, H. Y. / Chou, C. P. et al. | 2005
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16:45 D-2-4 Magnetic capture of a single magnetic nanoparticle using nano-electromagnetsKim, H. K. / Hong, S. H. / Hwang, S. W. / Hwang, J. S. / Ahn, D. / Seong, S. / Park, T. H. et al. | 2005
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13:30 E-1-1 Exciton - Photon Interactions in a Quantum Dot Microcavity (Invited)Reitzenstein, S. / Sek, G. / Loffler, A. / Reithmaier, J. P. / Kamp, M. / Kulakovskii, V. D. / Keldysh, L. V. / Reinecke, T. L. / Forchel, A. et al. | 2005
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14:00 E-1-2 1.55-mum-waveband lasing operation of Sb-based quantum-dot vertical-cavity surface-emitting lasers (Sb-based QD-VCSELs) fabricated on GaAs substrateYamamoto, N. / Akahane, K. / Gozu, S. / Ueta, A. / Ohtani, N. et al. | 2005
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14:15 E-1-3 Broad-band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum WellsRay, S. K. / Groom, K. M. / Beattie, M. D. / Liu, H. Y. / Hopkinson, M. / Hogg, R. A. et al. | 2005
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14:30 E-1-4 Self-formation of High-Density and High-Uniformity InAs Quantum-Dots on GaSb/GaAs Layers by Molecular Beam EpitaxyOhta, M. / Kanto, T. / Yamaguchi, K. et al. | 2005
- 100
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14:45 E-1-5 Long-Wavelength Emission from Strain Controlled InAs/GaAs Self-Assembled Quantum DotsInoue, T. / Matsushita, K. / Kikuno, M. / Kita, T. / Wada, O. / Mori, H. / Sakata, T. / Yasuda, H. et al. | 2005
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15:00 E-1-6 Highly enhanced efficiency and stability of Photo- and Electro- Luminescence of Nano-Crystalline Porous Silicon by High-Pressure Water Vapor AnnealingGelloz, B. / Koshida, N. et al. | 2005
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15:15 E-1-7 Higher luminance LEDs with nano-structured surface fabricated by self-assembled block-copolymerFujimoto, A. / Asakawa, K. et al. | 2005
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15:45 E-2-1 Recent Trend in High-Speed/Low-Power-Consumption Light Sources for MAN/Ethernet Applications (Invited)Aoki, M. / Makino, S. / Shimizu, J. / Arimoto, H. / Nakahara, K. et al. | 2005
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16:15 E-2-2 Optical 3R Wavelength Conversion by a combination of Self-pulsating DFB Laser and SOA-based Mach-Zehnder InterferometerNishikawa, S. / Gotoda, M. / Nishimura, T. / Miyahara, T. / Hatta, T. / Matsumoto, K. / Takagi, K. / Aoyagi, T. / Tokuda, Y. et al. | 2005
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16:30 E-2-3 Continuous-Wave Operation of 1.23mum Highly Strained InGaAs Quantum-Well Ridge Waveguide Lasers on GaAs SubstratesEzaki, M. / Kushibe, M. / Hashimoto, R. / Hatakoshi, G. / Nishioka, M. / Arakawa, Y. et al. | 2005
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16:45 E-2-4 MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2 mum Wavelength Region grown on InP SubstratesKawamura, Y. / Nakagawa, T. / Inoue, N. et al. | 2005
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17:00 E-2-5 High Power operation of GaN-based laser diode with high slope efficiencyKuramoto, K. / Ohno, A. / Yamada, T. / Okagawa, H. / Kawazu, Z. / Kawasaki, K. / Tomita, N. / Shiozawa, K. / Kanamoto, K. / Watanabe, H. et al. | 2005
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17:15 E-2-6 High Power Operation of 660-nm Laser Diodes with a Long CavityShibata, K. / Nishiguchi, H. / Yoshida, Y. / Sasaki, M. / Ono, K. / Yagi, T. / Shima, A. et al. | 2005
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17:30 E-2-7 Improvements in for N-Side-Up GaN/Mirror/Si LEDs Using High Reflective Ohmic ContactsHuang, S. H. / Wuu, D. S. / Pan, K. F. / Horng, R. H. et al. | 2005
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13:30 F-1-1 Spintronics Based on ZnO Thin Films (Invited)Tabata, H. / Saeki, H. / Matsui, H. et al. | 2005
- 122
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14:00 F-1-2 A Novel Buffer Layer using Titanium-Oxide for ZnO epitaxial growth on SapphireMiyamura, T. / Yamauchi, S. et al. | 2005
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14:15 F-1-3 Electrical, Optical and Structure Properties of ITO Films Cosputtered with ZnOLiu, D. S. / Wu, C. C. / Lin, C. H. / Lee, C. T. et al. | 2005
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14:30 F-1-4 A Piezoelectric ZnO Film Prepared by RF Magnetron SputteringLiu, D. S. / Li, C. H. / Wu, C. Y. / Lee, C. T. et al. | 2005
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14:45 F-1-5 Studies on the Nature of Deep Level Defects in GaCrN Diluted Magnetic SemiconductorShanthi, S. / Kimura, S. / Kobayashi, S. / Kim, M. S. / Zhou, Y. K. / Hasegawa, S. / Asahi, H. et al. | 2005
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15:00 F-1-6 Growth and Characterization of GaCrN/AlGaN/GaCrN Trilayer StructuresKim, M. S. / Zhou, Y. K. / Emura, S. / Hasegawa, S. / Asahi, H. et al. | 2005
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15:15 F-1-7 Controlled Growth of High Quality and Surface-Clean Multicomponent Thin Films for Nanoelectronics Applications by Using Substrates with Artificial StepsEndo, K. / Badica, P. / Sato, H. / Akoh, H. et al. | 2005
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15:45 F-2-1 Growth of Boron Nitride on 6H-SiC Substrate by Flow-rate Modulation EpitaxyKobayashi, Y. / Makimoto, T. et al. | 2005
- 136
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16:00 F-2-2 Flow-rate modulation epitaxy of wurtzite AlBNAkasaka, T. / Makimoto, T. et al. | 2005
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16:15 F-2-3 First-Principle Calculation of Bandgap Bowing Parameter for Wurzite InAlGaN Quaternary Alloy using Large SupercellTakizawa, T. / Nakazawa, S. / Ueda, T. / Tanaka, T. / Egawa, T. et al. | 2005
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16:30 F-2-4 InGaN quantum wells with small potential fluctuationAkasaka, T. / Gotoh, H. / Nakano, H. / Makimoto, T. et al. | 2005
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16:45 F-2-5 Triple Luminescence Peaks Observed in the InGaAsN/GaAs Single Quantum Well Grown by MOVPEChen, W. C. / Su, Y. K. / Chuang, R. W. / Hsu, S. H. et al. | 2005
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17:00 F-2-6 Growth and characteristics of GaNAs/GaAs MQW by molecular beam epitaxyTakao, K. / Fujii, K. / Miyagawa, H. / Tsurumachi, N. / Itoh, H. / Sumida, N. / Nakanishi, S. / Akiyama, H. / Koshiba, S. et al. | 2005
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17:15 F-2-7L Unpinning of the Fermi level at clean (111)A surfaces of heavily Si-doped In~0~.~5~3Ga~0~.~4~7As thin films epitaxially grown on InP substratesPerraud, S. / Kanisawa, K. / Wang, Z. Z. / Hirayama, Y. et al. | 2005
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17:30 F-2-8L Hetero-Epitaxial Growth of GaN onto SiC-on-SIMOX SubstratesYokoyama, T. / Egawa, T. / Oouchi, K. / Nakao, M. / Shirahata, T. / Kobayashi, S. / Izumi, K. et al. | 2005
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13:30 G-1-1 Fabrication and Demonstration of Quantum-Dot Cellular Automata Systems (Invited)Bernstein, G. H. / Imre, A. / Sarveswaran, K. / Lieberman, M. / Porod, W. et al. | 2005
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14:00 G-1-2 Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum CircuitsTamura, T. / Tamai, I. / Kasai, S. / Sato, T. / Hasegawa, H. / Hashizume, T. et al. | 2005
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14:15 G-1-3 GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxyNataraj, D. / Ooike, N. / Motohisa, J. / Fukui, T. et al. | 2005
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14:30 G-1-4 Independent Tuning of the Confinement and Density in a Quantum Point Contact using a Center Gate and a Back GateLee, H. M. / Muraki, K. / Chang, E. Y. / Hirayama, Y. et al. | 2005
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14:45 G-1-5 Relaxation Behavior of Sputter Epitaxy Si~1~-~xGe~x Film on P-Type Si(001) and NDR Observation from Hole-Tunneling RTD at RTKubota, J. / Hashimoto, A. / Suda, Y. et al. | 2005
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15:00 G-1-6 Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) SubstratesWatanabe, S. / Sugisaki, T. / Toriumi, Y. / Maeda, M. / Tsutsui, K. et al. | 2005
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15:15 G-1-7 High Peak-to-Valley Current Ratio of CdF~2/CaF~2 Resonant Tunneling Diode grown on Si(100) substrates by Nanoarea Local EpitaxyKanazawa, T. / Morosawa, A. / Watanabe, M. / Asada, M. et al. | 2005
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15:45 G-2-1 Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole TransistorKobayashi, M. / Saitoh, M. / Hiramoto, T. et al. | 2005
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16:00 G-2-2 Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage GainMiyaji, K. / Saitoh, M. / Hiramoto, T. et al. | 2005
- 168
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16:15 G-2-3 Multifunctional device by using a quantum dot arrayKaizawa, T. / Oya, T. / Arita, M. / Takahashi, Y. et al. | 2005
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16:30 G-2-4 Multi-Charge Turnstile Operation in Random-Multidot Channel FETIkeda, H. / Tabe, M. et al. | 2005
- 172
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16:45 G-2-5 Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron DevicesIshikawa, Y. / Yamamoto, C. / Tabe, M. et al. | 2005
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17:00 G-2-6 Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate BiasesNagai, T. / Ikeda, M. / Shimizu, Y. / Higashi, S. / Miyazaki, S. et al. | 2005
- 176
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17:15 G-2-7 Studies on MOSFET Low-Frequency Noise for Electrometer ApplicationsClement, N. / Inokawa, H. / Ono, Y. et al. | 2005
- 178
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17:30 G-2-8 Fowler-Nordheim current oscillations in Si(111)/SiO~2/twisted-Si(111) tunneling structuresMoraru, D. / Kato, H. / Horiguchi, S. / Ishikawa, Y. / Ikeda, H. / Tabe, M. et al. | 2005
- 180
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17:45 G-2-9L Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dotSurawijaya, A. / Mizuta, H. / Oda, S. et al. | 2005
- 182
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13:30 H-1-1 Physical and Microscopic Understanding of Data Retention Properties of DRAM (Invited)Okonogi, K. / Ohyu, K. et al. | 2005
- 184
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14:00 H-1-2 Optimization of Layout and Doping Profile Design for BT(Body Tied)-FinFET DRAMLee, C. H. / Lee, C. / Yoon, J. M. / Kim, K. / Park, S. B. / Kang, H. S. / Ahn, Y. J. / Park, D. et al. | 2005
- 186
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14:20 H-1-3 Application of HfSiON to Deep Trench Capacitors of Sub-45nm Node Embedded DRAMAndo, T. / Sato, N. / Hiyama, S. / Hirano, T. / Nagaoka, K. / Abe, H. / Okuyama, A. / Ugajin, H. / Tai, K. / Fujita, S. et al. | 2005
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14:40 H-1-4 Performance and Reliability of MIM (Metal-Insulator-Metal) Capacitors with ZrO~2 for 50nm DRAM ApplicationYoon, K. R. / Im, K. V. / Yeo, J. H. / Chung, E. A. / Kim, Y. S. / Yoo, C. Y. / Kim, S. T. / Chung, U. I. / Moon, J. T. et al. | 2005
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15:00 H-1-5 Improvement of Retention time by Hydrogen Penetration Slit in DRAM Integration with Triple MetallizationLee, J. H. / Park, J. S. / Kim, I. G. / Kim, T. S. / Cheon, S. H. / Hong, A. R. / Chang, J. M. / Kim, D. J. / Noh, J. Y. / Kim, Y. S. et al. | 2005
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15:45 H-2-1 Nitride-based nonvolatile memory and role of SiON dielectric film for performance improvement (Invited)Ishimaru, T. / Matsuzaki, N. / Hashimoto, T. / Kume, H. et al. | 2005
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16:15 H-2-2 Study of Temperature Effect on Low V~T State Behavior of NBit CellsChen, E. / Chen, K. F. / Huang, I. / Zous, N. K. / Liu, L. / Chen, Y. J. / Chen, S. / Chen, M. S. / Ho, L. T. / Lu, W. P. et al. | 2005
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16:35 H-2-3 NeoFlash® - True Logic Based 0.18mum Single Poly Embedded SONOS FlashLee, H. M. / Lim, L. / Jung, S. M. / Woo, S. T. / Chen, H. M. / Lin, C. Y. / Shen, R. / Wang, C. D. / Hsu, C. C. H. / Sun, S. C. et al. | 2005
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16:55 H-2-4 Program Boosting with Local Short-Channel-Effect (LSCE) Unique to Charge Trapping Memory Using Hot-Carrier-InjectionKobayashi, T. / Tomiye, H. / Oka, O. / Futai, H. / Hara, S. / Fujiwara, I. / Koyama, K. / Oda, T. et al. | 2005
- 200
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17:15 H-2-5 Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash MemoryLee, J. S. / Kang, C. S. / Shin, Y. C. / Lee, C. H. / Park, K. T. / Sel, J. S. / Kim, V. / Choe, B. I. / Sim, J. S. / Choi, J. et al. | 2005
- 202
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13:30 I-1-1 Physics of AlGaN/GaN Electronic and Photonic Devices (Invited)Shur, M. S. / Gaska, R. et al. | 2005
- 204
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14:00 I-1-2 High-Voltage 4H-SiC RESURF MOSFETs Processed by Oxide Deposition and N~2O AnnealingKimoto, T. / Kawano, H. / Noborio, M. / Suda, J. et al. | 2005
- 206
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14:15 I-1-3 Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power ApplicationsKawasaki, T. / Nakata, K. / Yaegassi, S. et al. | 2005
- 208
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14:30 I-1-4 Enhanced Breakdown Characteristic of AlGaN/GaN HEMTs Using a Gate/Drain Double Field-Plate StructureKim, S. / Yang, K. et al. | 2005
- 210
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14:45 I-1-5 A New ICP-CVD SiO~2 Passivation for High Voltage Switching AlGaN/GaN HFETsHa, M. W. / Lee, S. C. / Her, J. C. / Seo, K. S. / Han, M. K. et al. | 2005
- 212
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15:00 I-1-6 High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown VoltagesYagi, S. / Inada, M. / Yamamoto, Y. / Piao, G. / Yano, Y. / Hikosaka, K. / Shimizu, M. / Okumura, H. et al. | 2005
- 214
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15:15 I-1-7 Suppression on the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidationLee, S. C. / Ha, M. W. / Her, J. C. / Lim, J. Y. / Seo, K. S. / Han, M. K. et al. | 2005
- 216
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15:45 I-2-1 N-type Diamond Schottky DiodesSuzuki, M. / Koizumi, S. / Katagiri, M. / One, T. / Sakuma, N. / Yoshida, H. / Sakai, T. et al. | 2005
- 218
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16:00 I-2-2 Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical ProcessKimura, T. / Hasegawa, H. / Sato, T. / Hashizume, T. et al. | 2005
- 220
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16:15 I-2-3 Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High resolution, Wide Band A/D ConvertersMaezawa, K. / Sakou, M. / Matsubara, W. / Mizutani, T. / Matsuzaki, H. et al. | 2005
- 222
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16:30 I-2-4 Novel Differential-Mode RTD/HBT MOBILE-based D-Flip Flop ICJeong, Y. / Kim, T. / Yang, K. et al. | 2005
- 224
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16:45 I-2-5 High-Speed Digital Circuits Using RTD as Load-ElementKim, H. / Yeon, S. / Song, S. / Park, S. / Seo, K. et al. | 2005
- 226
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17:00 I-2-6 Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gateMiyamoto, Y. / Nakagawa, R. / Kashima, I. / Ishida, M. / Furuya, K. et al. | 2005
- 228
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17:15 I-2-7L AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO~2/SiN Triple-Layer InsulatorsEndoh, A. / Yamashita, Y. / Hirose, N. / Hikosaka, K. / Matsui, T. / Hiyamizu, S. / Mimura, T. et al. | 2005
- 230
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9:15 A-3-1 Dielectric Constant Behavior of Hf-O-N SystemIno, T. / Kamimuta, Y. / Suzuki, M. / Koyama, M. / Nishiyama, A. et al. | 2005
- 232
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9:35 A-3-2 Premittivity Enhancement of Hf~(~1~-~x~)Si~xO~2 Film with High Temperature AnnealingTomida, K. / Kita, K. / Toriumi, A. et al. | 2005
- 234
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9:55 A-3-3 Thermal Stability Improvements for HfO~2 by Fluorine ImplantationLai, C. S. / Wu, W. C. / Wang, J. C. / Chao, T. S. et al. | 2005
- 236
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10:45 A-4-1 Nanoscale Observations for Degradation Phenomena in SiO~2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy (Invited)Zaima, S. / Seko, A. / Watanabe, Y. / Sago, T. / Sakashita, M. / Kondo, H. / Sakai, A. / Ogawa, M. et al. | 2005
- 238
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11:15 A-4-2 A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistorsChoi, R. / Lee, B. H. / Park, H. K. / Young, C. D. / Sim, J. H. / Song, S. C. / Bersuker, G. et al. | 2005
- 240
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11:35 A-4-3 Evidence of Electrical and Structural Evolution of Gate Dielectric Breakdown Observed by Conductive Atomic Force MicroscopyZhang, L. / Mitani, Y. et al. | 2005
- 242
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11:55 A-4-4 Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH~3 Plasma and Ultra-violet RaysWang, J. C. / Wu, W. C. / Lai, C. S. / Lee, J. W. / Chiang, K. C. / Shie, D. C. / Lei, T. F. / Lee, C. L. et al. | 2005
- 244
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15:15 A-5-1 Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical PropertiesWatanabe, H. / Yoshida, S. / Watanabe, Y. / Shimura, T. / Yasutake, K. / Akasaka, Y. / Nara, Y. / Nakamura, K. / Yamada, K. et al. | 2005
- 246
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15:35 A-5-2 Local Current Leakage Characterization in La~2O~3-Al~2O~3 Composite Films by Conductive Atomic Force MicroscopySeko, A. / Sago, T. / Sakashita, M. / Sakai, A. / Ogawa, M. / Zaima, S. et al. | 2005
- 248
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15:55 A-5-3 Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate DielectricsOkada, K. / Ota, H. / Horikawa, T. / Tamura, Y. / Sasaki, T. / Aoyama, T. / Ootsuka, F. / Toriumi, A. et al. | 2005
- 250
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16:15 A-5-4 Reliable Extractions of EOT and V~f~b in Poly-Si Gate High-k MISFETs through Advanced Modeling of Gate and Substrate CapacitancesYasuda, N. / Ota, H. / Horikawa, T. / Nabatame, T. / Satake, H. / Toriumi, A. / Tamura, Y. / Sasaki, T. / Ootsuka, F. et al. | 2005
- 252
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17:00 A-6-1 A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOSYamamoto, Y. / Kita, K. / Kyuno, K. / Toriumi, A. et al. | 2005
- 254
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17:20 A-6-2 Design Methodology for La~2O~3-Based Ternally Higher-kappa DielectricsKita, K. / Zhao, Y. / Yamamoto, Y. / Kyuno, K. / Toriumi, A. et al. | 2005
- 256
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17:40 A-6-3 Film structures and electrical properties of Pr silicate formed by pulsed laser depositionAriyoshi, K. / Sakashita, M. / Sakai, A. / Ogawa, M. / Zaima, S. et al. | 2005
- 258
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9:15 B-3-1 Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI DevicesCheng, W. / Teramoto, A. / Hirayama, M. / Sugawa, S. / Ohmi, T. et al. | 2005
- 260
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9:35 B-3-2 Si Substrate Orientation Induced Worse Hot Carrier Degradation in Novel (110)/<111'> Oriented DevicesChiang, S. / Lu, M. F. / Liu, Y. C. / Huang-Lu, S. / Shiau, W. T. / Chien, S. C. et al. | 2005
- 262
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9:55 B-3-3 Device Design of High-Speed Source-Heterojunction-MOS-Transistors (SHOT) under 10-nm RegimeMizuno, T. / Takagi, S. et al. | 2005
- 264
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10:15 B-3-4L Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness ImprovementJanuar, D. / Tsutsui, G. / Saitoh, M. / Hiramoto, T. et al. | 2005
- 266
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10:45 B-4-1 Effects of Electron-Phonon Interaction on Transport Characteristics of Sub-10-nm Bulk-MOSFETsTakeda, H. / Mori, N. et al. | 2005
- 268
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11:05 B-4-2 Suppression of the rebound of hot-electrons from the drain region in ballistic transport due to device geometry: A Monte Carlo studyKurusu, T. / Natori, K. et al. | 2005
- 270
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11:25 B-4-3 A First Principles Study on Electronic Band Structures of Nano-Scaled SOI FilmsTeratani, Y. / Ando, T. / Tsuchiya, H. / Miyoshi, T. et al. | 2005
- 272
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11:45 B-4-4 Development of Electric Conductivity Simulator Based on Tight-Binding Quantum Chemical Molecular DynamicsTsuboi, H. / Setogawa, H. / Koyama, M. / Endou, A. / Kubo, M. / Broclawik, E. / Miyamoto, A. et al. | 2005
- 274
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15:15 B-5-1 Perspective on Emerging Devices and their Impact on Scaling Technologies (Invited)Biesemans, S. et al. | 2005
- 276
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15:45 B-5-2 Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI SubstrateEndo, K. / Masahara, M. / Liu, Y. / Matsukawa, T. / Ishii, K. / Sugimata, E. / Takashima, H. / Yamauchi, H. / Suzuki, E. et al. | 2005
- 278
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16:05 B-5-3 A Surrounding-Gate Transistor with Multi-Pillar Silicon ChannelsPark, J. / Woo, J. C. S. et al. | 2005
- 280
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16:25 B-5-4 Analytical model for subband engineering in undoped double gate MOSFETsFerrier, M. / Clerc, R. / Pananakakis, G. / Ghibaudo, G. / Boeuf, F. / Skotnicki, T. et al. | 2005
- 282
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17:00 B-6-1 MOSFET Harmonic Distortion up to the Cutoff Frequency: Measurement and Theoretical AnalysisTakeda, Y. / Navarro, D. / Chiba, S. / Ezaki, T. / Miura-Mattausch, M. / Mattausch, H. J. / Ohguro, T. / Iizuka, T. / Taguchi, M. / Kumashiro, S. et al. | 2005
- 284
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17:20 B-6-2 Modeling of Body Factor and Subthreshold Swing in Short Channel Bulk MOSFETsTamsir, A. / Saitoh, M. / Tsutsui, G. / Hiramoto, T. et al. | 2005
- 286
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17:40 B-6-3 Capacitance Due to the Charge Layer Thickness in Nanoscale CapacitorsNatori, K. / Oniki, M. / Kurusu, T. / Shimizu, T. et al. | 2005
- 288
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18:00 B-6-4L P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50 nm Channel LengthBhuwalka, K. K. / Born, M. / Schindler, M. / Schmidt, M. / Sulima, T. / Eisele, I. et al. | 2005
- 290
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15:15 C-5-1 Nano-meter order Structures of Porous Low-k Films and their Impacts on Cu/Low-k Processes (Invited)Shimada, M. / Shimanuki, J. / Otsuka, Y. / Harada, T. / Inoue, Y. / Ogawa, S. et al. | 2005
- 292
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15:45 C-5-2 Comparison of Pore Shape Models for Small Angle X-ray Scattering of a Disordered Porous Silica Low-k FilmKunishige, N. / Hata, N. / Fujii, N. / Kikkawa, T. et al. | 2005
- 294
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16:05 C-5-3 Adsorption in-situ Spectroscopic Ellipsometry Analysis of Disordered Porous Silica Low-k FilmsLi, X. / Fujii, N. / Hata, N. / Kikkawa, T. et al. | 2005
- 296
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16:25 C-5-4 Width Scaling and Layout Variation Effects on Dual Damascene Copper Interconnects ElectromigrationLin, M. H. / Chang, K. P. / Su, K. C. / Wang, T. et al. | 2005
- 298
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17:00 C-6-1 Comparison between UV and EB cure method for porous PAr / porous MSX hybrid structureFujita, K. / Miyajima, H. / Nakao, S. / Sakanaka, T. / Nakata, R. / Yano, H. / Yoda, T. et al. | 2005
- 300
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17:20 C-6-2 Via-Profile Controlled, Porous Low-k/ Cu DDIs with High Thermal StabilityOhtake, H. / Saito, S. / Tagami, M. / Tada, M. / Abe, M. / Furutake, N. / Hayashi, Y. et al. | 2005
- 302
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17:40 C-6-3 Comparative Studies of Pore Seal Films for Porous-Silica / Cu InterconnectShishida, Y. / Chikaki, S. / Shimoyama, M. / Yagi, R. / Yoshino, T. / Ono, T. / Ishikawa, A. / Fujii, N. / Nakayama, T. / Kohmura, K. et al. | 2005
- 304
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15:15 D-5-1 An SOI-CMOS Active Magnetic Probe for High-Frequency Electromagnetic EmissionsAoyama, S. / Kawahito, S. / Yasui, T. / Yamaguchi, M. et al. | 2005
- 306
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15:35 D-5-2 Integration of 0.45-mm^2 On-Chip-Antenna (OCA) with High Output Power for 2.45GHz RFID TagGuo, L. H. / Li, H. Y. / Popov, A. P. / Choi, Y. B. / Wang, Y. H. / Bliznetsov, V. / Yeoh, W. G. / Lo, G. Q. / Balasubramanian, N. / Kwong, D. L. et al. | 2005
- 308
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15:55 D-5-3 Analysis of Transmission Characteristics of Gaussian Monocycle Pulse for Silicon Integrated AntennasKimoto, K. / Sasaki, N. / Saha, P. K. / Nitta, M. / Kikkawa, T. / Sasaki, M. et al. | 2005
- 310
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16:15 D-5-4 A 2.4 GHz Differential Wavelet Generator in 0.18 mum CMOS for 1.4 Gbps UWB Impulse Radio in Wireless Inter/Intra-Chip Data CommunicationSaha, P. K. / Sasaki, N. / Kikkawa, T. et al. | 2005
- 312
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17:00 D-6-1 Design and Architecture Exploration for Image and Video Coding Systems (Invited)Huang, C. T. / Chen, L. G. et al. | 2005
- 314
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17:30 D-6-2 A Memory-Based Programmable Logic Device Using a Look-Up Table Cascade with Synchronous SRAMsNakamura, K. / Sasao, T. / Matsuura, M. / Tanaka, K. / Yoshizumi, K. / Nakahara, H. / Iguchi, Y. et al. | 2005
- 316
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17:50 D-6-3 A stochastic computing chip for measurement of Manhattan distanceHori, M. / Ueda, M. / Iwata, A. et al. | 2005
- 318
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9:15 E-3-1 Design and Simulation of Ring Resonator Switches using Electro-Optic MaterialsTanushi, Y. / Yokoyama, S. et al. | 2005
- 320
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9:30 E-3-2 Optical Properties of Line-Defect Waveguides in Square-Lattice-of-Pillars Photonic Crystals for Optical Buffer ApplicationTokushima, M. / Ushida, J. / Gomyo, A. / Shinoda, K. et al. | 2005
- 322
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9:45 E-3-3 Highly Enhanced Speed and Efficiency of Si Nano-Photodiode with a Surface-Plasmon AntennaFujikata, J. / Ishi, T. / Makita, K. / Baba, T. / Ohashi, K. et al. | 2005
- 324
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10:00 E-3-4 Slow Light Using Semiconductor Quantum Wells and Quantum Dots for Future Optical Networks (Invited)Chuang, S. L. / Chang, S. W. / Su, H. et al. | 2005
- 326
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10:45 E-4-1 Novel Laser Diode Structure consisting of a Si Waveguide and Compound-Semiconductor MQW layers for Si Platform IntegrationKodama, S. / Park, H. / Fang, A. / Bowers, J. E. et al. | 2005
- 328
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11:00 E-4-2 Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si SubstrateMatsuda, T. / Ibe, T. / Nishihara, K. / Iwata, H. / Iwatsubo, S. / Ohzone, T. et al. | 2005
- 330
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11:15 E-4-3 Investigation of beta-FeSi~2/Si Heterostructures by Photoluminescence with Different Optical ConfigurationsTerai, Y. / Maeda, Y. / Akiyama, K. / Fujiwara, Y. et al. | 2005
- 332
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11:30 E-4-4 Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitorsTabei, T. / Maeda, K. / Yokoyama, S. / Sunami, H. et al. | 2005
- 334
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11:45 E-4-5 Multi-Chip Shared-Memory Module with Optical Interconnection for Parallel Processor SystemKuribara, H. / Hashimoto, H. / Fukushima, T. / Koyanagi, M. et al. | 2005
- 336
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12:00 E-4-6 A 51,272-gate-count Dynamic Optically Reconfigurable Gate Array in a standard 0.35mum CMOS TechnologyWatanabe, M. / Kobayashi, F. et al. | 2005
- 338
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15:15 E-5-1 Active Pixel Sensor Using a PMOSFET-Type Photodetector with a Transfer Gate for Variable PhotosensitivitySeo, S. H. / Lee, S. H. / Do, M. Y. / Shin, J. K. / Choi, P. et al. | 2005
- 340
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15:30 E-5-2 Reduction of Random Noise for CMOS Image Sensors with 2.2mum x 2.2 mum PixelJung, J. / Lyu, J. H. / Kim, H. / Lee, H. W. / Song, J. H. / You, Y. / Noh, H. / Lee, D. / Kim, K. et al. | 2005
- 342
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15:45 E-5-3 Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Utilizing an Undoped Photo-Absorption LayerJun, D. H. / Jang, J. H. / Adesida, I. / Song, J. I. et al. | 2005
- 344
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16:00 E-5-4 A Bias-Dependent Equivalent-Circuit Model of High Performance Evanescently Coupled Photodiode with Partially P-Doped Absorption LayerWu, Y. S. / Lin, D. M. / Huang, F. H. / Chiu, W. Y. / Shi, J. W. / Chan, Y. J. et al. | 2005
- 346
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16:15 E-5-5 Heterojunction Bipolar Phototransistor with Monolithic Integrated MicrolensCho, S. J. / Kim, J. H. / Shin, S. H. / Yang, H. Y. / Kwon, Y. S. et al. | 2005
- 348
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16:30 E-5-6 Nitride-based p-i-n Photodetectors with ITO p-contactsKo, T. K. / Chang, S. J. / Su, Y. K. / Chiou, Y. Z. / Chang, C. S. / Shei, S. C. / Chen, W. S. / Shen, C. F. et al. | 2005
- 350
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17:00 E-6-1 Schottky-barrier diamond photodiode using thermally stable WC-based contactsLiao, M. / Alvarez, J. / Koide, Y. et al. | 2005
- 352
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17:15 E-6-2 Fabrication of GaAs/GaInNAs Heterojunction Solar Cells Applicable To High-Efficiency Multijunction Tandem StructuresKobayashi, N. / Miyashita, N. / Shimizu, Y. / Okada, Y. / Yamaguchi, M. et al. | 2005
- 354
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17:30 E-6-3 Quick Response Observed in Solid-State Electrochromic Device with an Interfacial Barrier StructureYoshimura, H. / Koshida, N. et al. | 2005
- 356
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17:45 E-6-4L High Temperature Operation (> 100^oC) of InGaAs/GaAs All-Active Monolithic Passively-Mode-Locked Single Quantum Well LasersXin, Y. C. / Stintz, A. / Cao, H. / Osinski, M. / Lester, L. F. et al. | 2005
- 358
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18:00 E-6-5L Characteristics of Flip-Chip InGaN LEDs on Patterned Sapphire SubstratesWang, W. K. / Lin, S. H. / Wuu, D. S. / Horng, R. H. et al. | 2005
- 360
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9:15 F-3-1 Quantum Dots, Quantum Dot Molecules, and Quantum Dot Crystals (Invited)Schmidt, O. G. / Rastelli, A. / Kiravittaya, S. / Wang, L. / Stoffel, M. / Beirne, G. J. / Hermannstaedter, C. / Michler, P. et al. | 2005
- 362
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9:45 F-3-2 Formation of Germanium-Rich Nanodots by Selective Oxidation of An As-Deposited Thin Hydrogenated Amorphous Silicon-Germanium LayerLo, S. Y. / Wu, P. J. / Yeh, R. H. / Hong, J. W. et al. | 2005
- 364
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10:00 F-3-3 Study of InGaN red emission multiple Quantum DotsWang, T. C. / Tsai, C. E. / Hsu, J. T. / Kuo, H. C. / Tsai, M. Y. et al. | 2005
- 366
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10:15 F-3-4 Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam EpitaxyUeta, A. / Akahane, K. / Gozu, S. / Yamamoto, N. / Ohtani, N. et al. | 2005
- 368
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10:45 F-4-1 Creation of Strained and Relaxed SiGe films simultaneously through Ge condensation on SOIMukherjee-Roy, M. / Agarwal, A. / Tung, C. H. / Kumar, R. / Bera, L. K. / Balasubramanian, N. / Kwong, D. L. et al. | 2005
- 370
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11:00 F-4-2 A Novel Approach to fabricate High Ge content SiGe on Insulator from Amorphous SiGe deposited on SOI wafersBalakumar, S. / Gao, F. / Lee, S. J. / Tung, C. H. / Kumar, R. / Sudhiranjan, T. / Foo, Y. L. / Balasubramanian, N. / Kwong, D. L. et al. | 2005
- 372
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11:15 F-4-3 Influence of H~2/SiH~4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVDOhmi, H. / Kakiuchi, H. / Yasutake, K. / Nakahama, Y. / Ebata, Y. / Yoshii, K. / Mori, Y. et al. | 2005
- 374
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11:30 F-4-4 Epitaxial Growth of Ferromagnetic Silicide Fe~3Si on Si (111) SubstrateSadoh, T. / Takeuchi, H. / Ueda, K. / Kenjo, A. / Miyao, M. et al. | 2005
- 376
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11:45 F-4-5 Nanoporous Ultra Low-k Dielectrics Prepared with Covalently Bonded Adamantylphenol Pore GeneratorsCha, B. J. / Kim, S. / Char, K. et al. | 2005
- 378
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12:00 F-4-6 Surface Hall Potentiometry to Characterize Functional Semiconductor FilmsArima, K. / Hiwa, K. / Nakaoka, R. / Morita, M. et al. | 2005
- 380
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15:15 F-5-1 Recent progress of organic transistor integrated circuits for large-area sensor applications (Invited)Someya, T. / Sakurai, T. / Sekitani, T. / Kawaguchi, H. / Iba, S. / Kato, Y. / Noguchi, Y. et al. | 2005
- 382
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15:45 F-5-2 Effects of CsF/Metal Cathode Interface on Electron Injection in Organic Light-Emitting Diodes Fabricated by Wet-ProcessKin, Z. / Yoshihara, K. / Kajii, H. / Hayashi, K. / Ohmori, Y. et al. | 2005
- 384
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16:00 F-5-3 Electrical bistability of organic thin-film devices using Ag electrodeTerai, M. / Fujita, K. / Tsutsui, T. et al. | 2005
- 386
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16:15 F-5-4 Memory Effect of Device Based on a Conjugated Donor-Acceptor CopolymerSong, Y. / Ling, Q. D. / Zhu, C. / Kang, E. T. / Chan, D. S. H. / Wang, Y. H. / Kwong, D. L. et al. | 2005
- 388
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16:30 F-5-5 Spectroscopy of Photocurrent Transients to Study Polaron states in the HOMO-LUMO Gap of MEH-PPVSamal, G. S. / Nandi, S. / Singh, S. P. / Mohapatra, Y. N. et al. | 2005
- 390
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17:00 F-6-1 Photocarrier Generation in Organic Thin Film Solar CellsOsasa, T. / Yamamoto, S. / Matsumura, M. et al. | 2005
- 392
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17:15 F-6-2 Study of the transient electroluminescence process using organic light-emitting diodes with a partial doping layerKajii, H. / Takahashi, K. / Kim, J. S. / Ohmori, Y. et al. | 2005
- 394
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17:30 F-6-3 Surface Plasmon Excitation and Emitted Light Properties in Otto/Kretschmann ConfigurationShinbo, K. / Yamamoto, T. / Shimizu, Y. / Ohdaira, Y. / Kato, K. / Kaneko, F. et al. | 2005
- 396
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17:45 F-6-4 Fabrication and Photoelectrochemical Properties of Porphyrin-Fullerene Assemblies by Self-assembly and Surface Sol-Gel ProcessesAkiyama, T. / Matsuoka, K. / Kakutani, K. / Yamada, S. et al. | 2005
- 398
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18:00 F-6-5 Electrochemical Behavior and Electronic Characteristics of Self-Assembled Viologen Monolayers using QCM and Au(111) surfaceLee, D. Y. / Park, S. H. / Qian, D. J. / Kwon, Y. S. et al. | 2005
- 400
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9:15 G-3-1 Probing Charge and Spin Excitations in Quantum Dots and Molecules (Invited)Finley, J. J. / Krenner, H. J. / Clark, E. / Kroutvar, M. / Heiss, D. / Schack, S. / Bichler, M. / Abstreiter, G. et al. | 2005
- 402
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9:45 G-3-2 Pulse Area Control of the Exciton Rabi Oscillation in InAs/GaAs Single Quantum DotGoshima, K. / Komori, K. / Yamauchi, S. / Morohashi, I. / Shikanai, A. / Sugaya, T. et al. | 2005
- 404
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10:00 G-3-3 Development of Electrically Driven Single-Photon Emitter at Optical Fiber BandsMiyazawa, T. / Tatebayashi, J. / Nakaoka, T. / Takatsu, M. / Ishida, S. / Iwamoto, S. / Takemoto, K. / Hirose, S. / Usuki, T. / Yokoyama, N. et al. | 2005
- 406
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10:15 G-3-4 Real-time observation of charge state transitions in a double quantum dotHayashi, T. / Fujisawa, T. / Tomita, R. / Hirayama, Y. et al. | 2005
- 408
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10:45 G-4-1 Acoustic Emission Characteristics of Nanocrystalline Porous Silicon Device Driven as an Ultrasonic SpeakerTsubaki, K. / Komoda, T. / Koshida, N. et al. | 2005
- 410
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11:00 G-4-2 Superconducting Proximity Effect on Piezoresistance in a Superconductor-Semiconductor JunctionOkamoto, H. / Akazaki, T. / Ueki, M. / Yamaguchi, H. et al. | 2005
- 412
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11:15 G-4-3 Room Temperature Electroluminescence of CdF~2/CaF~2 Inter-subband Transition Laser Structures grown on Si SubstrateJinen, K. / Kikuchi, T. / Watanabe, M. / Asada, M. et al. | 2005
- 414
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11:30 G-4-4 Electroluminescence of Oxygen Deficient YAlO~3 CrystalsAndo, M. / Sakaguchi, T. / Yamanaka, A. / Kawabe, Y. / Hanamura, E. et al. | 2005
- 416
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11:45 G-4-5 Resonant terahertz photomixing in integrated HEMT-QWIP deviceRyzhii, V. / Ryzhii, M. / Khmyrova, I. / Otsuji, T. / Shur, M. S. et al. | 2005
- 418
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12:00 G-4-6L Performance Investigation of Field-Emission Device Surrounded by High-k Dielectric (FESH)Murashima, K. / Omura, Y. et al. | 2005
- 420
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15:15 G-5-1 Fabrication of Defect-Free Sub-10 nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam ProcessKubota, T. / Chen, J. K. / Uraoka, Y. / Fuyuki, T. / Yamashita, I. / Yamasaki, S. / Samukawa, S. et al. | 2005
- 422
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15:30 G-5-2 Effect of ion diffusion on switching voltage of solid-electrolyte nanometer switchBanno, N. / Sakamoto, T. / Hasegawa, T. / Terabe, K. / Aono, M. et al. | 2005
- 424
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15:45 G-5-3 Temperature dependence of Space Charge Limited Current (SCLC) in thin films of silicon nanocrystalsRafiq, M. A. / Tsuchiya, Y. / Mizuta, H. / Uno, S. / Durrani, Z. A. K. / Milne, B. et al. | 2005
- 426
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16:00 G-5-4 Temperature dependent characteristics of diamond MESFETYe, H. / Kasu, M. / Yamauchi, Y. / Maeda, N. / Sasaki, S. / Makimoto, T. et al. | 2005
- 428
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16:15 G-5-5 High frequency gate bias response of carbon nanotube field effect transistorHong, S. H. / Kim, H. T. / Kim, H. K. / Kang, M. G. / Hwang, J. S. / Kim, G. T. / Hwang, S. W. / Ahn, D. et al. | 2005
- 430
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16:30 G-5-6 Phonon Limited Electron Transport In SOI and Double-Gate MOSFETs Incorporating Realistic Acoustic Phonon WavesUno, S. / Mori, N. et al. | 2005
- 432
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17:00 G-6-1 Spin Hall effect in a two dimensional spin-orbit coupled semiconductor system (Invited)Wunderlich, J. / Kaestner, B. / Nomura, K. / Sinova, J. / MacDonald, A. H. / Jungwirth, T. et al. | 2005
- 434
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17:30 G-6-2 Velocity Measurements of Magnetic Domain Wall by Local Hall EffectSekine, Y. / Nitta, J. et al. | 2005
- 436
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17:45 G-6-3 Magnetic and Microstructural Properties of FePt L1~0 Nanoparticle Films Fabricated by Self-Assembled Deposition MethodBea, J. C. / Yin, C. K. / Nishijima, M. / Fukushima, T. / Sadoh, T. / Miyao, M. / Koyanagi, M. et al. | 2005
- 438
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9:15 H-3-1 High Density and Ultra-Low Power Mobile SRAM Using theNovel Double S^3 (Stacked Single-crystal Silicon) Technology and KrF lithographyKwak, K. / Cho, W. / Kim, J. / Shim, J. / Lim, H. / Jeong, J. / Hong, C. / Cho, H. / Choi, B. et al. | 2005
- 440
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9:35 H-3-2 Highly Reliable and Manufacturable Low-Temperature Plasma Assisted Oxidation for High Density SRAM with Double Stacked Cell StructureKim, C. S. / Noh, Y. J. / Kim, J. H. / Koo, B. Y. / Heo, J. H. / Kim, D. C. / Shin, Y. G. / Chung, U. I. / Moon, J. T. et al. | 2005
- 442
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9:55 H-3-3 Technology Trend of Soft Errors based on Accurate Estimation MethodTosaka, Y. / Takasu, R. / Ehara, H. / Uemura, T. / Oka, H. / Satoh, S. / Matsuoka, N. / Hatanaka, K. et al. | 2005
- 444
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10:45 H-4-1 Feasibility analysis of direct tunneling through medium-kappa dielectrics for embedded RAM applicationsGovoreanu, B. / Degraeve, R. / Kauerauf, T. / Magnus, D. / Wellekens, D. / Groeseneken, G. / Houdt, J. V. et al. | 2005
- 446
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11:05 H-4-2 Impact of Vth interference suppression using a novel Poly Si shield on FLASH memoriesFukumura, T. / Shimizu, S. / Ikeda, Y. / Shimizu, M. / Fujinaga, M. / Ishikawa, K. / Ohta, F. / Fukasawa, A. / Yoshitake, T. / Hirao, K. et al. | 2005
- 448
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11:25 H-4-3 Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge ProfileKwon, W. H. / Han, J. I. / Kim, B. / Baek, C. K. / Sim, S. P. / Lee, W. H. / Han, J. H. / Jung, C. / Lee, H. K. / Jang, Y. K. et al. | 2005
- 450
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15:15 H-5-1 Bionanotechnology with Membrane Proteins: Mechanics and Electronics (Invited)Contera, S. A. / Voitchovsky, K. / Hamnett, H. / Ramanujan, C. S. / Toledo, N. / Lemaitre, V. / de Planque, M. / Watts, A. / Sumitomo, K. / Torimitsu, K. et al. | 2005
- 452
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15:45 H-5-2 High-throughput Screening of Mutant Biomolecules Using mRNA Display and Microreactor Array ChipsHosoi, Y. / Takahashi, K. / Biyani, M. / Nemoto, N. / Akagi, T. / Ichiki, T. et al. | 2005
- 454
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16:00 H-5-3 Immobilization of DNA Probes onto Gold Surface and its Application for a Fully Electric Detection of DNA Hybridization by Field Effect Transistor SensorIshige, Y. / Shimoda, M. / Kamahori, M. et al. | 2005
- 456
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16:15 H-5-4 Silicon-Nitride-Coated Silicon Biochip for Real-time Optical Sensing of Biomolecular InteractionFujimura, T. / Taniguchi, S. / Takenaka, K. / Goto, Y. et al. | 2005
- 458
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16:30 H-5-5 DNA Immobilization on Au/Sapphire Substrate Patterned by NanolithographyHoriike, S. / Oikawa, Y. / Nishimoto, T. et al. | 2005
- 460
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17:00 H-6-1 Integrated Microfluidic Systems for Cell and Tissue Engineering (Invited)Fujii, T. et al. | 2005
- 462
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17:30 H-6-2 Intelligent Neural Implant Microsystem Fabricated Using Multi-Chip Bonding TechniqueWatanabe, T. / Motonami, K. / Sakamoto, K. / Deguchi, J. / Kobayashi, R. / Komiya, K. / Okumura, K. / Fukushima, T. / Kurino, H. / Mushiake, H. et al. | 2005
- 464
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17:45 H-6-3 Evaluation of Electrical Stimulus Current to Retina Cells for Retinal ProsthesisMotonami, K. / Watanabe, T. / Deguchi, J. / Fukushima, T. / Tomita, H. / Sugano, E. / Sato, M. / Kurino, H. / Tamai, M. / Koyanagi, M. et al. | 2005
- 466
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18:00 H-6-4 Integration of Superparamagnetic Polymer Composites into Microfluidic Devices for the Feasible Control of Magnetic Beads in MicrochannelsAkagi, T. / Ichikawa, N. / Ichiki, T. et al. | 2005
- 468
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15:15 I-5-1 Characterization of AlGaN/GaN HFETs on a Si Substrate Grown by MOCVD (Invited)Egawa, T. et al. | 2005
- 470
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15:45 I-5-2 Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane SapphireKuroda, M. / Ishida, H. / Ueda, T. / Tanaka, T. et al. | 2005
- 472
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16:00 I-5-3 AlGaN/GaN HEMTs with inclined-gate-recess structureAoi, Y. / Ohno, Y. / Kishimoto, S. / Maezawa, K. / Mizutani, T. et al. | 2005
- 474
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16:15 I-5-4 Novel quaternary AlInGaN/GaN HFET grown by MOCVD on sapphire substrateLiu, Y. / Egawa, T. / Jiang, H. / Ishikawa, H. et al. | 2005
- 476
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16:30 I-5-5 Barrier Height Enhancement of AlGaN/GaN Schottky Diodes by P~2S~5/(NH~4)~2S~x Surface TreatmentsChang, L. B. / Jeng, M. J. / Chang, C. H. / Hsieh, L. Z. / Kuei, P. Y. et al. | 2005
- 478
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17:00 I-6-1 Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTsAo, J. P. / Kan, R. / Hirao, T. / Okada, H. / Okada, M. / Kikuta, D. / Onoda, S. / Itoh, H. / Ohno, Y. et al. | 2005
- 480
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17:15 I-6-2 High-Temperature Operation Over 500 ^oC of Pnp AlGaN/GaN HBTsKumakura, K. / Makimoto, T. et al. | 2005
- 482
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17:30 I-6-3 Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar TransistorsMakimoto, T. / Kido, T. / Kumakura, K. / Taniyasu, Y. / Kasu, M. / Matsumoto, N. et al. | 2005
- 484
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17:45 I-6-4 p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device ApplicationsNishikawa, A. / Kumakura, K. / Makimoto, T. et al. | 2005
- 486
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18:00 I-6-5L C-band AlGaN/GaN HEMTs with 170W Output PowerTakada, Y. / Sakurai, H. / Matsushita, K. / Masuda, K. / Takatsuka, S. / Kuraguchi, M. / Suzuki, T. / Hirose, M. / Kawasaki, H. et al. | 2005
- 488
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P1-1 Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicateMomida, H. / Hamada, T. / Yamamoto, T. / Uda, T. / Umezawa, N. / Shiraishi, K. / Chikyow, T. / Ohno, T. et al. | 2005
- 490
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P1-2 Effect of SiO~2 Underneath Layer on LaAlO~3 High Dielectric Constant Material for Gate Oxide ApplicationHasan, M. / Hwang, H. et al. | 2005
- 492
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P1-3 Thermal Stability of the Yttrium Aluminate Film and the Suppression of its structural change and electrical properties degradationYamamoto, T. / Izumi, Y. / Miyamoto, T. / Seki, H. / Hashimoto, H. / Inoue, M. / Oosawa, M. / Hasaka, S. / Sugita, Y. / Ikeda, K. et al. | 2005
- 494
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P1-4 Effect Of Starting Interface in Scalability/Device Performance of Ultra-Scaled ALD HfSiON/TiN Gate StacksQuevedo-Lopez, M. A. / Krishnan, S. A. / Kirsch, P. D. / Peterson, J. / Li, H. J. / Kim, M. / Huffman, C. et al. | 2005
- 496
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P1-5 A New Method to Correct Capacitance of High-leakage Ultra-thin Gate DielectricTsui, B. Y. / Huang, Y. P. / Hsieh, F. C. / Wu, W. H. et al. | 2005
- 498
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P1-6 Threshold Voltage Instability in nMOSFETs with HfSiO/SiO~2 High-k Gate StacksWu, W. H. / Hou, Y. T. / Jin, Y. / Tao, H. J. / Chen, S. C. / Liang, M. S. / Tsui, B. Y. / Chen, M. C. et al. | 2005
- 500
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P1-7 A Novel Explanation of Substrate Bias Dependent Dielectric Breakdown Behavior with Channel Quantization Effect in Ultrathin Oxide pMOSFETsChiang, S. / You, J. W. / Lu, C. T. / Lu, M. F. / Huang-Lu, S. / Chien, S. C. et al. | 2005
- 502
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P1-8 Improving high-kappa gate dielectrics properties by high pressure water vapor annealingPunchaipetch, P. / Nakamura, H. / Uraoka, Y. / Fuyuki, T. / Sameshima, T. / Horii, S. et al. | 2005
- 504
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P1-9 Reduction of Accumulation Thickness in Metal GateWatanabe, H. / Nakajima, K. / Matsuo, K. / Saito, T. / Kobayashi, T. et al. | 2005
- 506
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P1-10 Analysis of NiSi Fully-silicided Gate on SiO~2 and HfO~2 for CMOS ApplicationHuang, C. F. / Tsui, B. Y. et al. | 2005
- 508
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P1-11 Composition control of Ni-silicide by CVD using Ni(PF~3)~4 and Si~3H~8Ishikawa, M. / Muramoto, I. / Machida, H. / Ohshita, Y. / Imai, S. / Ogura, A. et al. | 2005
- 510
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P1-12 Work Function Adjustment by Nitrogen Incorporation in HfN Gate ElectrodeLai, C. S. / Peng, S. K. / Wang, J. C. / Pan, T. M. / Fan, K. M. / Wong, J. Y. et al. | 2005
- 512
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P1-13 Overcoming Challenges in Metal Gate Etching for Sub-45 nm Technology NodeBliznetsov, V. N. / Kumar, R. / Bera, L. K. / Loh, W. Y. / Tung, C. H. / Balasubramanian, N. / Kwong, D. L. et al. | 2005
- 514
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P1-14 Germanium Out-Diffusion in HfO~2 and its Impact on Electrical PropertiesZhang, Q. / Wu, N. / Zhu, C. / Bera, L. K. et al. | 2005
- 516
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P1-15 Gate Stack Integration of Germanium Oxynitride for Germanium MOSFETsChao, Y. L. / Scholz, R. / Woo, J. C. S. et al. | 2005
- 518
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P1-16 Atomistic Modeling of Boron Diffusion with Germanium Pre-amorphization for Ultra Shallow S/D Junction in nanometer-scale PMOS DevicesKim, B. J. / Yoo, J. H. / Won, T. et al. | 2005
- 520
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P1-17 Influences of Ion Implantation Damages on Elevated Source/Drain Formation for Ultra-Thin Body SOI MOSFETOh, H. J. / Sakaguchi, T. / Bea, J. C. / Fukushima, T. / Koyanagi, M. et al. | 2005
- 522
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P1-18 Ion-Implanted p/n Junction Characteristics p- and n-type in GermaniumNishimura, T. / Toyama, M. / Kita, K. / Kyuno, K. / Toriumi, A. et al. | 2005
- 524
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P1-19 Impact of Annealing Methods and Sequences on Dopant Activation and Diffusion of Ultra-shallow Implanted SiliconYoo, W. S. / Kang, K. et al. | 2005
- 526
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P1-20 Effect of Hydrogen on Helium implant-induced NanocavitiesVengurlekar, A. / Ashok, S. / Ntsoenzok, E. / Theodore, N. D. et al. | 2005
- 528
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P1-21 Development of Hybrid Tight-Binding Quantum Chemical Molecular Dynamics Method and Its Application to Boron Implantation Process into Pre-amorphized Silicon SubstrateMasuda, T. / Tsuboi, H. / Koyama, M. / Endou, A. / Kubo, M. / Broclawik, E. / Miyamoto, A. et al. | 2005
- 530
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P1-22 Ultra-Shallow p+/n Junction Prepared by Low Energy BF~3 Plasma Doping (PLAD) and KrF Excimer Laser AnnealingLee, D. K. / Baek, S. K. / Cho, C. H. / Heo, S. H. / Hwang, H. S. et al. | 2005
- 532
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P1-23 Dopant Activation Enhancement in Silicon by Hydrogen TreatmentVengurlekar, A. / Ashok, S. et al. | 2005
- 534
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P1-24 Application of Microwave Plasma Gate Oxidation to Strained-Si on SiGe and SGOINishisaka, M. / Asano, T. et al. | 2005
- 536
-
P1-25 Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped SiGoto, T. / Terasaki, M. / Asahara, H. / Nakazawa, H. / Inokuchi, A. / Yamanaka, J. / Teramoto, A. / Hirayama, M. / Sugawa, S. / Ohmi, T. et al. | 2005
- 538
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P1-26 Characterization of Crystalline Defects and Stress in Shallow Trench Isolation by Cathodoluminescence and Raman SpectroscopiesSugie, R. / Matsuda, K. / Nagai, N. / Ajioka, T. / Yoshikawa, M. / Mizukoshi, T. / Shibusawa, K. / Yo, S. et al. | 2005
- 540
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P1-27 Depth Profile of Various Bonding Configration of Nitrogen Atoms in Silicon Oxynitrides formed by Plasma NitridationNohira, H. / Shinagawa, S. / Ikuta, T. / Hori, M. / Kase, M. / Okamoto, H. / Hattori, T. et al. | 2005
- 542
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P1-28 A new landing plug formation in a submicron self-aligned contact etchingLee, M. S. / Lee, S. K. / Jung, T. W. / Lee, D. D. / Moon, S. C. et al. | 2005
- 544
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P1-29L Modulation of NiGe/Ge Schottky Barrier Height by Dopant and Sulfur Segregation during Ni Germanidation for Metal S/D Ge MOSFETsIkeda, K. / Yamashita, Y. / Taoka, N. / Sugiyama, N. / Takagi, S. et al. | 2005
- 546
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P1-30L Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on SiliconZhao, Y. / Toyama, M. / Kita, K. / Kyuno, K. / Toriumi, A. et al. | 2005
- 548
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P2-1 Hydrocarbon Groups and Film Properties of SiOCH Dielectrics: Theoretical Investigations using Molecular ModelsTajima, N. / Hamada, T. / Ohno, T. / Yoneda, K. / Kobayashi, N. / Hasaka, S. / Inoue, M. et al. | 2005
- 550
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P2-2 High frequency dielectric mapping using un-contact probe for dielectric materialsKakemoto, H. / Nam, S. M. / Wada, S. / Tsurumi, T. et al. | 2005
- 552
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P2-3 Infrared Complex Dielectric Function Analysis for Chemical Bonding Structure of Porous Silica Low Dielectric Constant FilmsTakada, S. / Hata, N. / Hishiya, S. / Fujii, N. / Nakayama, T. / Kikkawa, T. et al. | 2005
- 554
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P2-4 Effect of Pore Generating Materials on the Electrical and Mechanical Properties of Porous Low-k FilmsKim, S. / Hahn, J. / Char, K. et al. | 2005
- 556
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P2-5 Grating Metal Structure with Low-K BCB and Electroplated Copper for High-Q Spiral InductorsYeo, S. K. / Shin, S. H. / Lee, J. H. / Kwon, Y. S. et al. | 2005
- 558
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P2-6 UV-Raman Spectroscopy System for Local and Global Strain Measurement in SiChiba, I. / Shimidzu, R. / Yamasaki, K. / Kosemura, D. / Tanaka, S. / Ogura, A. et al. | 2005
- 560
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P2-7 Characterization of Self Assembled Monolayers for Ultra Low-k FilmsMurthy, B. R. / Yee, W. M. / Krishnamoorthy, A. / Anand, V. / Yong, K. Y. / Choy, S. F. / Prasad, K. / Kumar, R. / Frye, D. C. et al. | 2005
- 562
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P2-8 Deep Trench Etching for Chip-to-Chip Three-Dimensional IntegrationKikuchi, H. / Yamada, Y. / Kijima, H. / Fukushima, T. / Koyanagi, M. et al. | 2005
- 564
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P2-9 High Aspect-Ratio Through-Wafer Interconnections with Thick Oxidized Porous Silicon Sidewall ViaKim, B. J. / Ha, M. L. / Kwon, Y. S. et al. | 2005
- 566
-
P2-10 Numerical Study of the Self-Interconnection Assembly Method Using Resin Containing Solder FillersOhta, K. / Yasuda, K. / Matsushima, M. / Fujimoto, K. et al. | 2005
- 568
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P2-11 The annealing effects of GaN MIS capacitors with photo-CVD oxide layersChiou, Y. Z. / Su, Y. K. / Chang, S. J. / Wang, C. K. / Tang, J. J. et al. | 2005
- 570
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P2-12 AC Power Loss and Signal Coupling in VLSI backend InterconnectsChen, C. C. / Liao, C. C. / Kao, H. L. / Chin, A. / McAlister, S. P. / Chi, C. C. et al. | 2005
- 572
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P2-13 Nickel Germanide Formation on Condensed Ge Layer for Ge-on-Insulator Device ApplicationChoi, H. / Park, M. / Fukushima, T. / Koyanagi, M. et al. | 2005
- 574
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P2-14L Properties of Low-k (k∼2.05) Plasma Polymer Films Deposited by PECVD Using Decamethylcyclopentasiloxane and Cyclohexane as the PrecursorsYang, J. / Lee, S. / Yeo, S. / Jung, D. / Chae, H. et al. | 2005
- 576
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P2-15L Photoluminescence characterization of strained Si-SiGe-on-insulator wafersWang, D. / Matsumoto, K. / Nakamae, M. / Nakashima, H. et al. | 2005
- 578
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P3-1 3D Device Simulation for Neutron-induced Latch-up in CMOS DevicesYamaguchi, H. / Ibe, E. / Yahagi, Y. / Kameyama, H. et al. | 2005
- 580
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P3-2 Characterization of Embedded Poly-Heater PMOSFETs and its Application on In-Line Wafer Level NBTI MonitorWang, C. S. / Chang, W. C. / Ke, W. S. / Chiang, C. T. / Lee, C. F. / Su, K. C. / Chen, M. J. et al. | 2005
- 582
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P3-3 DC Hot Carrier Reliability at Elevated Temperatures for nMOSFETs Using 0.13 mum TechnologyLin, J. C. / Chen, S. Y. / Chen, H. W. / Jhou, Z. W. / Lin, H. C. / Chou, S. / Ko, J. / Lei, T. F. / Haung, H. S. et al. | 2005
- 584
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P3-4 The Impact of Body-Potential on Hot-Carrier-Induced Device Degradation for 90nm Partially-Depleted SOI nMOSFETsLai, C. M. / Lin, C. T. / Fang, Y. K. / Yeh, W. K. / Syu, J. W. / Shiau, W. T. et al. | 2005
- 586
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P3-5 Investigation of Accumulation-mode Vertical Double-gate MOSFETMasahara, M. / Endo, K. / Liu, Y. X. / Matsukawa, T. / O uchi, S. / Ishii, K. / Takashima, H. / Sugimata, E. / Suzuki, E. et al. | 2005
- 588
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P3-6 Characteristics of Metal Gate GOI-MOSFET with High-k Gate Dielectric Fabricated by Ge Condensation MethodPark, M. / Choi, H. / Bea, J. / Fukushima, T. / Koyanagi, M. et al. | 2005
- 590
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P3-7 Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body ContactJi, I. H. / Choi, Y. H. / Kim, S. S. / Choi, Y. I. / Han, M. K. et al. | 2005
- 592
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P3-8 Analytical Solutions to Quantum Drift-Diffusion Equations for Quantum Mechanical Modeling of MOS StructuresUno, S. / Abebe, H. / Cumberbatch, E. et al. | 2005
- 594
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P3-9 Comparison of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field Effect TransistorsLi, Y. / Yu, S. M. / Hsiao, C. F. et al. | 2005
- 596
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P3-10 Impact of Oxide Thickness Fluctuation on MOSFETs Gate TunnellingCheng, B. / Roy, S. / Martinez, A. / Asenov, A. et al. | 2005
- 598
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P3-11 Carrier Mobility in Multi-FinFETs with a (111) Channel Surface Fabricated by Orientation-Dependent Wet EtchingLiu, Y. X. / Sugimata, E. / Ishii, K. / Masahara, M. / Endo, K. / Matsukawa, T. / Takashima, H. / Yamauchi, H. / Suzuki, E. et al. | 2005
- 600
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P3-12 Accurate Evaluation of Inversion-Layer Mobility and Experimental Extraction of Local Strain Effect in sub-mum Si MOSFETsTanaka, C. / Ohuchi, K. / Koga, J. et al. | 2005
- 602
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P3-13 Electron and Hole Mobilities in Orthorhombically Strained SiliconChang, S. T. et al. | 2005
- 604
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P3-14 Investigation and Modeling of Stress Interactions on 90 nm SOI CMOS with Various Mobility Enhancement ApproachesLin, C. T. / Fang, Y. K. / Yeh, W. K. / Chang, H. C. / Hsu, C. H. / Chen, L. W. / Lee, M. L. / Tsai, C. T. / Shiau, W. T. et al. | 2005
- 606
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P3-15 MEMS 3-D Stacked RF Transformers Fabricated by 0.18 mum MS/RF CMOS technology With Improved Power Loss and Noise Figure PerformancesLin, Y. S. / Liang, H. B. / Wang, T. / Lu, S. S. et al. | 2005
- 608
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P3-16 Mobility Modulation Technology Impact on Device Performance and Reliability for <100> sub-90nm SOI CMOSFETsLai, C. M. / Lin, C. T. / Yeh, W. K. / Fang, Y. K. / Shiau, W. T. et al. | 2005
- 610
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P3-17 The DC Performance of Nanometer MOSFETs: Targets Versus RealitySchwierz, F. et al. | 2005
- 612
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P3-18 A High Performance Embedded 60nm Gate Length CMOSFET with Novel Strained Silicon ProcessHuang, C. J. / Chang, K. Y. / Chou, S. / Koe, J. / Huang, J. H. / Liao, H. / Lim, C. Y. et al. | 2005
- 614
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P3-19 A Novel Simplified Process for Self Aligned Planar Wrapping Gate FET's with Directionally Crystallized Si Channel Processed via Sequential Lateral SolidificationPark, Y. W. / Woo, J. C. S. et al. | 2005
- 616
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P3-20 The Characteristics and Reliability of Multi-channel Poly-Si TFTsShieh, M. S. / Sang, J. Y. / Chen, C. Y. / Wang, S. D. / Lei, T. F. et al. | 2005
- 618
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P3-21L Empirical Quantitative Modeling of Threshold Voltage of Sub-50-nm Double-Gate SOI MOSFET'sTahara, Y. / Omura, Y. et al. | 2005
- 620
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P3-22L Effective Prevention of Single Event Burnout for N-Channel Power MOSFETsLai, Y. L. / Huang, C. Y. et al. | 2005
- 622
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P3-23L A Novel Statistical Methodology for Sub-100 nm MOSFET Fabrication Optimization and Sensitivity AnalysisLi, Y. / Chou, Y. S. et al. | 2005
- 624
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P4-1 The New Technology for DRAM Cell Transistor with S-RCAT and its Size EffectPark, S. G. / Kim, J. Y. / Kim, Y. I. / Oh, H. J. / Lee, W. S. / Kim, J. H. / Kim, S. E. / Shim, M. S. / Lee, K. P. / Park, Y. J. et al. | 2005
- 626
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P4-2 Improvement of Cell Stability at Low Voltage Operation on 6T-SRAM Cell with 0.1mum Channel WidthJung, H. C. / An, S. / Son, Y. / Cho, Y. / Nam, J. / Koh, K. / Kim, K. / Lee, W. S. et al. | 2005
- 628
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P4-3 Abnormal Disturb Mechanism of sub 100nm NAND FlashJoo, S. J. / Yang, H. J. / Kim, H. S. / Noh, K. H. / Lee, H. G. / Woo, W. S. / Lee, J. Y. / Lee, M. K. / Choi, W. Y. / Hwang, K. P. et al. | 2005
- 630
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P4-4 Characteristics of Band-to-Band Hot Hole Injection for Erasing Operation in Charge Trapping MemorySun, L. / Pan, L. / Pang, H. / Zeng, Y. / Zhang, Z. / Chen, J. / Zhu, J. et al. | 2005
- 632
-
P4-5 Thorough Diagnoses of the Impact of Flash Memory Cell UV-State Threshold Voltage on the Cell Reliability and Program/Erase Cycling Endurance PerformanceKuo, V. C. W. / Hwang, H. P. / Huang, C. T. / Chou, C. W. / Tzeng, S. M. / Lai, C. P. / Tzeng, T. W. / Huang, Y. E. / Wong, W. Z. / Yang, C. S. et al. | 2005
- 634
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P4-6 Effect of Compensation Implant in SONOS Flash EEPROMsKumar, P. B. / Sharma, R. / Murakami, E. / Kamohara, S. / Mahapatra, S. et al. | 2005
- 636
-
P4-7 Non-volatile Al~2O~3 memory using an Al-rich structure as a charge storage layerNakata, S. / Saito, K. / Shimada, M. et al. | 2005
- 638
-
P4-8 A new low temperature APM cleaning process to improve ONO integrity in 0.18 mum stacked-gate EEPROM memoryZhao, J. / Kim, N. S. / Ng, J. S. / Wong, K. F. / Zhang, W. / Mukhopadhyay, M. / Shukla, D. et al. | 2005
- 640
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P4-9 Effects of Voltage Cycling on Polarization and Reliability of 3D SBT Ferroelectric Capacitors Integrated in 0.18mum CMOS TechnologyWouters, D. J. / Goux, L. / Lisoni, J. / Maes, D. / Meeren, H. V. / Paraschiv, V. / Haspeslagh, L. / Artoni, C. / Corallo, G. / Zambrano, R. et al. | 2005
- 642
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P4-10 Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling BarrierSakaguchi, T. / Choi, H. / Sugimura, T. / Oogane, M. / Oh, H. / Hayakawa, J. / Ikeda, S. / Lee, Y. M. / Fukushima, T. / Miyazaki, T. et al. | 2005
- 644
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P4-11 Annealing effect of phase change and current control in phase change channel transistor memoryYin, Y. / Niida, D. / Sone, H. / Hosaka, S. et al. | 2005
- 646
-
P4-12L Ultra High Density HfO~2-Nanodot Memory for Flash Memory ScalingWakai, H. / Sugizaki, T. / Kumise, T. / Kobayashi, M. / Yamaguchi, M. / Nakanishi, T. / Tanaka, H. et al. | 2005
- 648
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P4-13L Amorphous Channel SESO Memory with Good Logic Process Compatibility for Low-power High-density Embedded RAMKameshiro, N. / Ishii, T. / Mine, T. / Sano, T. / Watanabe, T. et al. | 2005
- 650
-
P4-14L Reversible Resistive Switching in Bi~4Ti~3O~1~2 Thin Films Deposited by Election Cyclotron Resonance SputteringJin, Y. / Sakai, H. / Shimada, M. et al. | 2005
- 652
-
P5-1 A Large Variable Ratio On-Chip Inductor with Spider Legs ShieldYammouch, T. / Sugawara, H. / Okada, K. / Masu, K. et al. | 2005
- 654
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P5-2 Systematic Analysis and Modeling of On-Chip Spiral Inductors for CMOS RFIC ApplicationTang, M. C. / Fang, Y. K. / Lai, C. M. / Yeh, W. K. / Yeh, T. H. et al. | 2005
- 656
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P5-3 An Intelligent Simulation-Based Optimization Technique for Integrated Circuit Design Automation: A Case Study of LNA Circuit DesignLi, Y. / Chou, H. M. et al. | 2005
- 658
-
P5-4 A Novel Fast Lock-in PLL Frequency Synthesizer with Direct Frequency Presenting CircuitKuang, X. / Wu, N. / Shou, G. et al. | 2005
- 660
-
P5-5 Estimation of Wire Length Distribution for Evaluating Performance Improvement of Three-Dimensional LSIDeguchi, J. / Nakatani, Y. / Sugimura, T. / Fukushima, T. / Koyanagi, M. et al. | 2005
- 662
-
P5-6 No Feedback DeltaSigma ADC for High Frequency Operation Using Frequency DeltaSigma ModulatorMatsubara, W. / Sakou, M. / Maezawa, K. / Mizutani, T. et al. | 2005
- 664
-
P5-7 THD Measurement and Compensation for Analog Circuits with Fine CMOS DevicesKomuro, T. / Sobukawa, S. / Kobayashi, H. / Sakayori, H. et al. | 2005
- 666
-
P5-8 A Novel Operation Scheme for Realizing Combined Linear-Logarithmic Response in Photodiode-Type Active Pixel Sensor CellsHamasaki, A. / Terauchi, M. / Horii, K. et al. | 2005
- 668
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P5-9 New TxID sequence and Matched Filter implementation for ATSC DTVCha, J. S. / Yoon, B. D. / Hur, N. Y. / Lee, Y. T. / Kim, S. W. et al. | 2005
- 670
-
P5-10L Measurement of Inductive Coupling in Wireless SuperconnectMizoguchi, D. / Miura, N. / Yoshida, Y. / Yamagishi, N. / Kuroda, T. et al. | 2005
- 672
-
P5-11L A 20% Power Reduction in Two-stage Opamp by Source-Degenerated Active-Load Phase CompensationTamtrakarn, A. / Ishida, K. / Sakurai, T. et al. | 2005
- 674
-
P5-12L A High Throughput Configurable Motion Estimation Processor Core for Video ApplicationsLai, Y. K. / Chen, L. F. et al. | 2005
- 676
-
P5-13L A Novel Reconfigurable Computing Core for Multimedia System-on-Chip ApplicationsLai, Y. K. / Chen, J. C. et al. | 2005
- 678
-
P5-14L Realizing Ultra-low Energy Application Specific SoC Architectures through Novel Probabilistic CMOS (PCMOS) TechnologyPalem, K. V. / Chakrapani, L. N. / Akgul, B. E. / Korkmaz, P. et al. | 2005
- 680
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P6-1 Extremely Low Noise Characteristics of 0.15 mum Power Metamorphic HEMTShim, J. Y. / Yoon, H. S. / Kang, D. M. / Hong, J. Y. / Lee, K. H. et al. | 2005
- 682
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P6-2 In~0~.~4~9GaP/Al~0~.~4~5GaAs E-pHEMT with High Gate Forward Turn-on Voltage & High Transconductance LinearityJang, K. / Lee, J. Y. / Lee, J. H. / Seo, K. et al. | 2005
- 684
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P6-3 Origin of Frequency Dependence in Drain Conductance of InAlAs/InGaAs HEMTsTaguchi, H. / Hayakawa, M. / Nakamura, Y. / Iida, T. / Takanashi, Y. et al. | 2005
- 686
-
P6-4 Improvement of Linearity in Novel InGaAsN-based HEMTsSu, Y. K. / Hsu, S. H. / Chang, S. J. / Wu, J. D. et al. | 2005
- 688
-
P6-5 Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility TransistorLee, C. S. / Hsu, W. C. / Chen, Y. J. / Huang, J. C. / Huang, D. H. et al. | 2005
- 690
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P6-6 A Comparative Study on the DC, Microwave Characteristics of 0.12 mum Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Dielectric Assisted ProcessLim, J. W. / Ahn, H. K. / Ji, H. G. / Chang, W. J. / Mun, J. K. / Kim, H. et al. | 2005
- 692
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P6-7 Novel In~0~.~4~2~5Al~0~.~5~7~5As/In~xGa~1~-~xAs Metamorphic delta-HEMT's on GaAs Substrate with Various Channel DesignsHsu, W. C. / Lee, C. S. / Chen, Y. J. / Huang, J. C. / Wu, C. L. et al. | 2005
- 694
-
P6-8 Compact RF Switches Using Dielectric Overhang Gate Process & Stacked InductorJang, K. / Lee, J. / Kim, S. / Seo, K. et al. | 2005
- 696
-
P6-9 P-type doping for Be/C co-implantation in GaNLiu, K. T. / Su, Y. K. / Chang, S. J. / Horikoshi, Y. et al. | 2005
- 698
-
P6-10 Enhanced f~m~a~x and low base resistance in Ni silicided SiGe HBTBae, H. C. / Kim, S. H. / Song, Y. J. / Yoo, S. W. / Lee, S. H. / Kim, B. W. et al. | 2005
- 700
-
P6-11 Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti/Pt/Au Gate MetallizationJang, J. H. / Kim, S. / Adesida, I. et al. | 2005
- 702
-
P6-12 HEMT Yield Improvement with Ultrasonic-assisted recess for High speed Integrated CircuitYeon, S. J. / Kim, H. / Lee, J. / Seo, K. et al. | 2005
- 704
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P6-13 Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)Lai, P. H. / Fu, S. I. / Tsai, Y. Y. / Yen, C. H. / Kao, C. I. / Chen, C. W. / Liu, W. C. et al. | 2005
- 706
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P6-14L Pulsed Characteristics of Microwave SiGe Heterojunction Bipolar Transistors Operated at High Collector VoltagesChang, L. H. / Chen, K. M. / Huang, G. W. / Tseng, H. C. / Liang, V. et al. | 2005
- 708
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P7-1 Effect of Surface Treatment on the Performances of Vertical-structure GaN-based High-power LEDs with Electroplating Metallic SubstrateUang, K. M. / Wang, S. J. / Chen, S. L. / Yang, Y. C. / Chen, T. M. / Liou, B. W. et al. | 2005
- 710
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P7-2 Fabrication and characteristics of GaN-based Microcavity LEDs with high reflectivity AlN/GaN DBRsPeng, Y. C. / Kao, C. C. / Tsai, J. Y. / Lu, T. C. / Yao, H. H. / Kao, T. T. / Lin, C. F. / Kuo, H. C. / Wang, S. C. et al. | 2005
- 712
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P7-3 GaN-Based Green Resonant Cavity Light Emitting DiodesWang, W. K. / Horng, R. H. / Huang, S. Y. / Chen, J. M. / Tsai, Y. J. / Wuu, D. S. et al. | 2005
- 714
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P7-4 Light-output Enhanced of GaN-based Light-emitting Diodes by Photoelectro-chemical oxidation in H~2OLai, F. I. / Chen, W. Y. / Kao, C. C. / Kuo, H. C. / Wang, S. C. et al. | 2005
- 716
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P7-5 High Brightness InGaN/GaN LEDs with ESD ProtectionShei, S. C. / Chang, C. S. / Chang, S. J. / Su, Y. K. et al. | 2005
- 718
-
P7-6 Enhanced Light Output of InGaN/GaN Light Emitting Diode with Excimer Laser Etching on Nanoroughened P-GaN SurfaceHuang, H. W. / Chu, J. T. / Kao, C. C. / Hsueh, T. H. / Kuo, H. C. / Wang, S. C. et al. | 2005
- 720
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P7-7 Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrorsChen, W. S. / Chang, S. J. / Su, Y. K. / Lin, Y. C. / Chang, C. S. / Ke, T. K. / Shen, C. F. / Shei, S. C. et al. | 2005
- 722
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P7-8 Relative Intensity Noise of Vertical Cavity Surface Emitting Lasers (VCSELs) with Polarization-Selective FeedbackChang, Y. H. / Lai, F. I. / Tsai, W. K. / Chang, Y. A. / Yu, H. C. / Yang, H. P. / Sung, C. P. / Wang, S. C. et al. | 2005
- 724
-
P7-9 A Theoretical Study: Effect of Eu and Er ion Dopant on the Electronic Excitations of Yttrium Oxide and Yttrium Oxy-SulphideGovindasamy, A. / Lv, C. / Tsuboi, H. / Koyama, M. / Endou, A. / Kubo, M. / Broclawik, E. / Miyamoto, A. et al. | 2005
- 726
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P7-10 A Theoretical Study on Influence of Oxygen Vacancies on the Electronic Properties of Indium Oxide and Indium Tin OxideLv, C. / Wang, X. / Govindasamy, A. / Tsuboi, H. / Koyama, M. / Endou, A. / Kubo, M. / Broclawik, E. / Miyamoto, A. et al. | 2005
- 728
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P7-11 Theoretical Design of MgO Protecting Layer in Plasma Display by New Kinetic Monte Carlo SimulatorKubo, M. / Kikuchi, H. / Masuda, T. / Tsuboi, H. / Koyama, M. / Endou, A. / Kajiyama, H. / Miyamoto, A. et al. | 2005
- 730
-
P7-12 Photoluminescence and Electroluminescence Properties of The Er-doped Silicon-Rich Silicon Oxide Films deposited by Pulsed Laser Deposition TechniqueLim, Y. / Ko, C. / Han, M. / Bae, C. H. / Park, S. M. / Park, K. et al. | 2005
- 732
-
P7-13 Structural and Optical Properties of Electro-Optic Material: Sputtered (Ba,Sr)TiO~3Suzuki, M. / Xu, Z. / Tanushi, Y. / Yokoyama, S. et al. | 2005
- 734
-
P7-14 Photodetector Characteristics of Metal-Oxide-Semiconductor Tunneling Structures with Transparent Conductive Tin Oxide GateChikamoto, M. / Hashimoto, H. / Horikoshi, K. / Shinozaki, A. / Morita, S. / Arima, K. / Uchikoshi, J. / Morita, M. et al. | 2005
- 736
-
P7-15 Novel Fabrication Technique of Optical Waveguides using Low Density Silicon Nitride Films Deposited by Plasma-Enhanced Chemical Vapor DepositionYokoyama, S. / Kakite, T. et al. | 2005
- 738
-
P7-16 Groove-Buried Optical Waveguides Based on Metal Organic Solution-Derived Ba~0~.~7Sr~0~.~3TiO~3 Thin FilmsXu, Z. / Suzuki, M. / Tanushi, Y. / Wakushima, K. / Yokoyama, S. et al. | 2005
- 740
-
P7-17 InP/InGaAs Partially p-Doped Photodiode with Leaky Optical Waveguide and Distributed Bragg Reflectors for High-Saturation-Current and High-Bandwidth-Responsivity ProductChiu, W. Y. / Wang, W. K. / Wu, Y. S. / Huang, F. H. / Lin, D. M. / Chan, Y. J. / Shi, J. W. et al. | 2005
- 742
-
P7-18 Control of Spectral Photosensitivity in Stacked Color Sensors: Proposal and Theoretical AnalysisKakimoto, N. / Numai, T. et al. | 2005
- 744
-
P7-19 Fabrication of Si thin-film solar cells by hot-wire chemical vapor deposition and laser doping techniquesLien, S. Y. / Wuu, D. S. / Lin, Y. C. / Hsieh, I. C. / Mao, H. Y. et al. | 2005
- 746
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P7-20 Homoepitaxial ZnSe MIS Photodetectors Using SiO~2 and BST InsulatorLin, T. K. / Chang, S. J. / Su, Y. K. / Chiou, Y. Z. / Wang, C. K. / Chang, S. P. / Tang, J. J. / Huang, B. R. et al. | 2005
- 748
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P7-21L Enhanced Extraction Efficiency of Vertical Conducting InGaN LEDs with Micro-Pillar SurfaceWang, W. K. / Wuu, D. S. / Lin, W. Y. / Huang, S. Y. / Horng, R. H. et al. | 2005
- 750
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P7-22L Optical Gain of Polarized Emission in InAs Quantum Dots with In~xGa~1~-~xAs Capping LayerZhang, Y. C. / Tamura, N. / Kita, T. / Wada, O. / Nakata, Y. / Ebe, H. / Sugawara, M. / Arakawa, Y. et al. | 2005
- 752
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P8-1 Constraining the Direction of Carbon Nanotubes by Oxide Capping LayerLin, K. C. / Lai, R. L. / Chang, Y. R. / Juan, C. P. / Chuang, T. Y. / Shiu, J. K. / Tai, H. C. / Cheng, H. C. et al. | 2005
- 754
-
P8-2 Crystal Growth Mechanism of Spherical Silicon Fabricated by Dropping MethodOmae, S. / Minemoto, T. / Murozono, M. / Takakura, H. / Hamakawa, Y. et al. | 2005
- 756
-
P8-3 High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVDWakamiya, T. / Ohmi, H. / Kakiuchi, H. / Watanabe, H. / Yasutake, K. / Yoshii, K. / Mori, Y. et al. | 2005
- 758
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P8-4 High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric PressureKakiuchi, H. / Ohmi, H. / Kuwahara, Y. / Matsumoto, M. / Ebata, Y. / Yasutake, K. / Yoshii, K. / Mori, Y. et al. | 2005
- 760
-
P8-5 Study of Effects of Metal Layer on Hydrogen Desorption from Hydrogenated Amorphous Silicon Using Temperature-Programmed DesorptionHamaoka, Y. / Ohmi, H. / Kakiuchi, H. / Yasutake, K. et al. | 2005
- 762
-
P8-6 Fabrication of InP and InGaAs air-hole type Two-dimensional Photonic Crystals by Selective Area MOVPEHashimoto, S. / Takeda, J. / Tarumi, A. / Hara, S. / Motohisa, J. / Fukui, T. et al. | 2005
- 764
-
P8-7 Precise Control of Growth of VCSEL Structure by using MBE in situ Reflectance MonitorMizutani, M. / Teramae, F. / Takeuchi, K. / Murase, T. / Naritsuka, S. / Maruyama, T. et al. | 2005
- 766
-
P8-8 Interface states of AlSb/InAs heterointerface with AlAs-like interfaceGozu, S. / Akahane, K. / Yamamoto, N. / Ueta, A. / Ando, T. / Ohtani, N. et al. | 2005
- 768
-
P8-9 X-ray Resonant/Off-Resonant Scattering of Fractional Monolayer AlAs/GaAs SuperlatticesMiyagawa, H. / Takao, K. / Fujii, K. / Mizumaki, M. / Sakata, O. / Kimura, S. / Kitano, A. / Ueji, R. / Sumida, N. / Koshiba, S. et al. | 2005
- 770
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P8-10L Growth and Characterization of Germanium on Insulator (GOI) from Sputtered Ge by Novel Single and Dual Necking techniquesBalakumar, S. / Roy, M. M. / Ramanamurthy, B. / Fei, G. / Tung, C. H. / Kumar, R. / Balasubramanian, N. / Tripathy, T. S. / Lee, S. J. / Kwong, D. L. et al. | 2005
- 772
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P8-11L Control of Electrical Properties of Single-walled Carbon Nanotubes by Low-energy Electron IrradiationKanzaki, K. / Suzuki, S. / Kobayashi, Y. / Ono, Y. / Inokawa, H. et al. | 2005
- 774
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P8-12L Quantum Dot Formation by Post-Growth Annealing of a Wetting LayerSong, H. Z. / Usuki, T. / Nakata, Y. / Yokoyama, N. / Sasakura, H. / Muto, S. et al. | 2005
- 776
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P9-1 A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETsChen, B. H. / Wei, J. H. / Lo, P. Y. / Tsai, M. J. / Chao, T. S. / Lin, H. C. / Huang, T. Y. et al. | 2005
- 778
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P9-2 Synthesis of Inorganic-Compounded Nanowires using Carbon Nanotube TemplatesKonishi, H. / Kishida, M. / Murata, Y. / Yasuda, T. / Maeda, D. / Tomita, K. / Motoyoshi, K. / Honda, S. / Lee, J. G. / Mori, H. et al. | 2005
- 780
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P9-3 Metal-coated Carbon Nanotube Tips for Nanoscale Electrical MeasurementsMurata, Y. / Kishida, M. / Konishi, H. / Maeda, D. / Yasuda, T. / Motoyoshi, K. / Tomita, K. / Honda, S. / Okado, H. / Yoshimoto, S. et al. | 2005
- 782
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P9-4 Fabrication of nanoscaled-schottky diodes based on metal silicide/silicon nanowire with scanning probe lithography and Wet etching and its electrical characterizationSheu, J. T. / Yeh, S. P. / Tsai, S. T. / Lien, C. H. et al. | 2005
- 784
-
P9-5 Quantum Simulation of Nanoscale Metal/Insulator Tunnel TransistorsShin, M. et al. | 2005
- 786
-
P9-6 Selective deposition of gold particles on DPN patterns on silicon dioxide surfaceSheu, J. T. / Wu, C. H. / Chao, T. S. et al. | 2005
- 788
-
P9-7 Feasibility of Observing a Spin Drag Effect in the Electronic TransportTakahashi, Y. / Sato, Y. / Hirose, F. / Kawaguchi, H. et al. | 2005
- 790
-
P9-8 Dynamic Analyses of Thermally Induced Ultrasonic Emission from Nanocrystalline SiliconWatabe, Y. / Honda, Y. / Koshida, N. et al. | 2005
- 792
-
P9-9 Exciton dephasing in (AlAs)~m/(GaAs)~n various period superlatticesTakizawa, S. / Hari, H. / Miyaoka, Y. / Fujii, K. / Yamada, H. / Miyagawa, H. / Tsurumachi, N. / Koshiba, S. / Nakanishi, S. / Itoh, H. et al. | 2005
- 794
-
P9-10 Ultraviolet Lasing of Sol-Gel Derived Zinc Oxide Polycrystalline FilmsKuo, S. Y. / Lai, F. I. / Chen, W. C. / Cheng, C. P. / Kuo, H. C. / Wang, S. C. et al. | 2005
- 796
-
P10-1 Fabrication of Electrically conductive Chemically adsorbed monomolecular layer with polypyrrolyl groupsYamamoto, S. / Ogawa, K. et al. | 2005
- 798
-
P10-2 Electronic and Transport Properties of Ferrocene Molecule: Theoretical StudyUehara, T. / Baba, H. / Belosludov, R. / Farajian, A. A. / Mizuseki, H. / Kawazoe, Y. et al. | 2005
- 800
-
P10-3 Structure and Properties Due to NO~2 Gas in Copper Phthalocyanine Films Prepared by Oblique Vacuum Evaporation MethodWakasa, T. / Shinbo, K. / Ohdaira, Y. / Kato, K. / Kaneko, F. et al. | 2005
- 802
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P10-4 Organic Multi-Function Diodes Operable for Emission and Photo detection ModesShimada, H. / Yanagi, J. / Matsushita, Y. / Naka, S. / Okada, H. / Onnagawa, H. et al. | 2005
- 804
-
P10-5 The Influence of the Conductive Layer on the Organic Electroluminescent DeviceYu, H. H. / Hwang, S. J. / Tsen, M. C. et al. | 2005
- 806
-
P10-6 Characteristics of polymer light emitting diodes with the LiF anode interfacial layerSohn, S. / Yang, J. / Chae, H. / Boo, J. / Jung, D. et al. | 2005
- 808
-
P10-7 Air-stable Ambipolar Organic Thin Film Transistors Based on Copper Pthalocyanince CompositesYe, R. / Baba, M. / Suzuki, T. / Mori, K. et al. | 2005
- 810
-
P10-9 Organic thin-film transistors with N2 treatmentWu, B. T. / Su, Y. K. / Chen, Y. S. / Tu, M. L. / Chiou, Y. T. / Chu, C. H. et al. | 2005
- 812
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P10-10 Analysis of Interface trap between pentacene active layer and gate insulator of OTFTsHan, C. K. / Kim, T. H. / Song, C. K. et al. | 2005
- 814
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P10-11 SPICE model of Pentacene Thin Film TransistorJung, H. / Xu, Y. X. / Song, C. K. et al. | 2005
- 816
-
P10-12L Fabrication of Planar Nano-gap Electrodes for Single Molecule EvaluationNakata, M. / Edura, T. / Tsutsui, K. / Tokuda, M. / Onozato, H. / Kaneko, T. / Nagatsuma, K. / Morita, M. / Itaka, K. / Koinuma, H. et al. | 2005
- 818
-
P10-13L Electrospray Deposition of PEDOT-PSS and Electrochemical CharacterizationOhnishi, R. / Kojima, K. / Tanaka, K. / Usui, H. et al. | 2005
- 820
-
P10-14L Evaluation of Carrier Mobility Models for Organic Semiconductor Device SimulationsOhashi, N. / Hirashima, N. / Goto, N. / Nakamura, M. / Kudo, K. et al. | 2005
- 822
-
P11-1 Vibration Characteristics of PZT Actuator by Fluid Flow in Intravascular OxygenatorKim, G. B. / Kwon, T. K. / Kim, S. J. / Hong, C. U. / Kim, N. G. et al. | 2005
- 824
-
P11-2 Ion Polarity Dependent Voltage Shifts of SiGe Membrane for pH SensorLai, C. S. / Yang, C. M. / Wang, C. Y. / Wang, T. C. et al. | 2005
- 826
-
P11-3 Development of DNA chip nanoarray by Fluidic Self-assembly method for Detection of DNA HybridizationKim, D. K. / Kwon, Y. S. / Takamura, Y. / Tamiya, E. et al. | 2005
- 828
-
P11-4 Development of Nano-Gap Device for BiosensorMorita, S. / Hirokane, T. / Takegawa, T. / Urabe, S. / Arima, K. / Uchikoshi, J. / Morita, M. et al. | 2005
- 830
-
P11-5 Vacuum Pressure Sensors Using Carbon Nanotubes as Electron EmittersKim, S. J. / Choi, N. K. / Jeon, J. O. / Lee, S. H. / Lee, C. J. et al. | 2005
- 832
-
P11-6 Improvement of Breakdown Field of Carbon Nanotubes by a Ti-Capping Layer on Catalyst NanopaticlesLai, R. L. / Chang, Y. R. / Juan, C. P. / Chuang, T. Y. / Lin, K. C. / Shiu, J. K. / Tai, H. C. / Chen, K. H. / Chen, L. C. / Cheng, H. C. et al. | 2005
- 834
-
P11-7 Fabrication InGaN Nano-disk Structure in GaN Reverse Hexagonal PyramidLin, C. F. / Dai, J. J. / Yang, Z. J. / Zheng, J. H. et al. | 2005
- 836
-
P11-8 Fabrication the Nanoporous InGaN-based Light-Emitting DiodesLin, C. F. / Zheng, J. H. / Yang, Z. J. / Dai, J. J. et al. | 2005
- 838
-
P11-9 Fast and Accurate Simulation for Topography in Nanometer Semiconductor ProcessLee, J. G. / Won, T. et al. | 2005
- 840
-
P11-10L Fabrication of Photonic Crystals Using Nanoimprint LithographyLai, Y. L. / Chiu, C. C. et al. | 2005
- 842
-
9:15 A-7-1 Atomic Layer Deposition of PMOS Metal Gate Electrodes and High-k/Metal Interface Reactions for Advanced Device Applications (Invited)Parsons, G. N. / Park, K. J. / Terry, D. B. et al. | 2005
- 844
-
9:45 A-7-2 Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) ProcessTsuchiya, Y. / Koyama, M. / Koga, J. / Nishiyama, A. et al. | 2005
- 846
-
10:05 A-7-3 Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal gate MISFETs with NiSi Source/DrainMatsuki, T. / Nishimura, I. / Akasaka, Y. / Hayashi, K. / Noguchi, M. / Yamashita, K. / Torii, K. / Kasai, N. / Nara, Y. et al. | 2005
- 848
-
10:45 A-8-1 Mo~XSi~YN~Z Metal Gate Electrode with Tunable Work Function for Advanced CMOSZhao, P. / Kim, J. / Kim, M. J. / Gnade, B. E. / Wallace, R. M. et al. | 2005
- 850
-
11:05 A-8-2 Ta-based metal gates (Ta, TaB~x, TaN~x and TaC~x) -Modulated Work Function and Improved Thermal Stability-Ichiahra, R. / Tsuchiya, Y. / Kamimuta, Y. / Koyama, M. / Nishiyama, A. et al. | 2005
- 852
-
11:25 A-8-3 Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO~x MOSFETs with Nanometer TaN Dots at the Top InterfaceFujiwara, H. / Kadoshima, M. / Ota, H. / Takaba, H. / Mise, N. / Satake, H. / Nabatame, T. / Toriumi, A. et al. | 2005
- 854
-
11:45 A-8-4 Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETsSakashita, S. / Mori, K. / Tanaka, K. / Mizutani, M. / Inoue, M. / Yamanari, S. / Yugami, J. / Miyatake, H. / Yoneda, M. et al. | 2005
- 856
-
13:30 A-9-1 Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO~2 Gate DielectricKamata, Y. / Kamimuta, Y. / Ino, T. / Iijima, R. / Koyama, M. / Nishiyama, A. et al. | 2005
- 858
-
13:50 A-9-2 Thermally Robust Y~2O~3/Ge MOS CapacitorsNomura, H. / Kita, K. / Kyuno, K. / Toriumi, A. et al. | 2005
- 860
-
14:10 A-9-3 First-principles studies on metal induced gap states (MIGS) at metal/high-k HfO~2 interfacesNakaoka, T. / Shiraishi, K. / Akasaka, Y. / Chikyow, T. / Yamada, K. / Nara, Y. et al. | 2005
- 862
-
14:30 A-9-4 Theoretical analysis of the Fermi level pinning in HfO~2/Si system induced by the interface defect statesIkeda, M. / Kresse, G. / Nabatame, T. / Toriumi, A. et al. | 2005
- 864
-
9:15 B-7-1 Advanced split-CV technique for accurate extraction of inversion layer mobility in short channel MOSFETsIrie, H. / Toriumi, A. et al. | 2005
- 866
-
9:35 B-7-2 Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOIIkishima, M. / Tsunoda, I. / Sadoh, T. / Enokida, T. / Ninomiya, M. / Nakamae, M. / Miyao, M. et al. | 2005
- 868
-
9:55 B-7-3 High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation TechniqueNakaharai, S. / Tezuka, T. / Toyoda, E. / Hirashita, N. / Moriyama, Y. / Maeda, T. / Numata, T. / Sugiyama, N. / Takagi, S. et al. | 2005
- 870
-
10:45 B-8-1 Explanation of Negative Bias Temperature Instability Mechanism in p-MOSFETs by Reaction-Diffusion Model (Invited)Mahapatra, S. / Sharma, S. / Kumar, P. B. / Varghese, D. / Saha, D. et al. | 2005
- 872
-
11:15 B-8-2 Influence of bulk bias on NBTI of pMOSFETs with ultrathin SiON gate dielectricZhu, S. / Nakajima, A. / Ohashi, T. / Miyake, H. et al. | 2005
- 874
-
11:35 B-8-3 Devices Characteristics and Aggravated Negative Bias Temperature Instability in PMOSFETs with Uniaxial Compressive StrainLu, C. Y. / Lin, H. C. / Chang, Y. F. / Huang, T. Y. et al. | 2005
- 876
-
11:55 B-8-4 A Comprehensive Study of Hot-Carrier Effects in Body-Tied FinFETsHan, J. W. / Lee, C. H. / Park, D. / Choi, Y. K. et al. | 2005
- 878
-
13:30 B-9-1 Efficient Reduction of Standby Leakage Current in LSIs for Use in Mobile DevicesKudo, H. / Ishikawa, K. / Mishima, Y. / Satou, S. / Kihara, F. / Okamoto, M. / Ito, T. / Suzuki, Y. / Nomura, T. / Kawano, M. et al. | 2005
- 880
-
13:50 B-9-2 Reliability and Memory Characteristics of Sequential Laterally Solidified LTPS Poly-Si TFT with a ONO Stack Gate DielectricHsieh, S. I. / King, Y. C. / Chen, H. T. / Chen, Y. C. / Chen, C. L. / Lin, J. X. et al. | 2005
- 882
-
14:10 B-9-3 Direct measurement of the offset spacer effect on the carrier profiles in sub-50 nm p-MOSFETsFukutome, H. / Saiki, T. / Nakamura, R. / Usujima, A. / Aoyama, T. et al. | 2005
- 884
-
14:30 B-9-4 Degradation of Current Drivability of Schottky Source/Drain Transistors with High-k Gate Dielectrics and Possible Measures to Suppress the PhenomenonOno, M. / Nishiyama, A. / Koyama, M. et al. | 2005
- 886
-
15:15 B-10-1 Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation TechnologyIwamatsu, T. / Tsujiuchi, M. / Hirano, Y. / Ikeda, T. / Komatsu, F. / Ipposhi, T. / Maegawa, S. / Ohji, Y. et al. | 2005
- 888
-
15:35 B-10-2 A High Gain (25%) Strained Silicon Scheme for 65nm High Performance nMOSFETsChang, T. Y. / Pan, J. W. / Liu, Y. C. / Lan, B. C. / Tsai, C. H. / Chen, T. F. / Tung, C. H. / Huang, C. T. / Tsai, C. T. / Shiau, W. T. et al. | 2005
- 890
-
15:55 B-10-3 Advanced I/O Technology using Laterally Modulated Channel MOSFET for 65-nm Node SoCYoshida, E. / Momiyama, Y. / Hasegawa, N. / Kojima, M. / Satoh, S. / Sugii, T. et al. | 2005
- 892
-
9:15 C-7-1 Material and Electrical Characterization of Nickel Germanide for p-channel Germanium Schottky Source/Drain TransistorsLee, R. T. P. / Liew, S. L. / Balakrishnan, B. / Lee, K. Y. / Yeo, Y. C. / Chi, D. Z. et al. | 2005
- 894
-
9:35 C-7-2 Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS ApplicationsOh, S. Y. / Yun, J. G. / Kim, Y. J. / Lee, W. J. / Ji, H. H. / Agchbayar, T. / Kim, U. S. / Cha, H. S. / Heo, S. B. / Cho, Y. J. et al. | 2005
- 896
-
9:55 C-7-3 Theoretical Investigation of Neutral Point Defects in CoSi~2Wang, T. / Son, Y. H. / Joo, H. S. / Kim, Y. J. / Han, I. S. / Lee, H. D. et al. | 2005
- 898
-
10:15 C-7-4L Low Resistance Ni Thin Film Deposition for Nickel Silicide by Atomic Layer DepositionDo, K. W. / Yang, C. M. / Kang, I. S. / Kim, K. M. / Back, K. H. / Cho, H. I. / Lee, H. B. / Hahm, S. H. / Kong, S. H. / Lee, J. H. et al. | 2005
- 900
-
10:45 C-8-1 Current Status and Forecast in High-Performance CMOS Device Technology (Invited)Sugii, T. et al. | 2005
- 902
-
11:15 C-8-2 Buried Epitaxial, Si~1~-~yC~y (y = 0.07%) for the Suppression of Leakage in SPER (550 ^oC 10 mins) Activated Junctions and Current Drive Enhancement in nMOSFETTan, C. F. / Chor, E. F. / Lee, H. / Liu, J. / Quek, E. / Chan, L. et al. | 2005
- 904
-
11:35 C-8-3 Gate Overlapped Raised Extension Structure (GORES) MOSFET by Using In-situ Doped Selective Si EpitaxyTateshita, Y. / Imoto, T. / Kikuchi, Y. / Wang, J. / Kataoka, T. / Miyanami, Y. / Ikeda, H. / Fujita, S. / Landin, T. / Arena, C. et al. | 2005
- 906
-
11:55 C-8-4 A Double-Gate device architecture optimization for sub-45nm digital CMOS technologies using cell-based timing analysisSurdeanu, R. / Doornbos, G. / Ng, R. / Christie, P. / Nguyen, V. H. / Pawlak, B. J. / Loo, J. J. G. P. / Dal, M. J. H. V. / Ponomarev, Y. V. et al. | 2005
- 908
-
13:30 C-9-1 Dopant Redistribution at Nickel Silicide/Silicon InterfaceYamauchi, T. / Kinoshita, A. / Ohuchi, K. / Kato, K. et al. | 2005
- 910
-
13:50 C-9-2 Integration of ultra shallow junctions in PVD TaN nMOS transistors with Flash Lamp AnnealingSeveri, S. / De Meyer, K. / Pawlak, B. J. / Duffy, R. / Kerner, C. / McCoy, S. / Gelpey, J. / Selinger, T. / Ragnarsson, L. A. / Absil, P. P. et al. | 2005
- 912
-
14:10 C-9-3 Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology NodesYon, G. H. / Hong, S. J. / Buh, G. H. / Park, T. S. / Shin, Y. G. / Chung, U. I. / Moon, J. T. et al. | 2005
- 914
-
14:30 C-9-4 Function of Phase Switch Layer for Ultra Shallow Junction Formation by Green Laser AnnealingMatsuno, A. / Shibahara, K. et al. | 2005
- 916
-
15:15 C-10-1 Analysis of the Origin of the Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO~2 gate stacksManabe, K. / Takahashi, K. / Hase, T. / Ikarashi, N. / Oshida, M. / Tatsumi, T. / Watanabe, H. et al. | 2005
- 918
-
15:35 C-10-2 Realization of A Metal Split Gate By Gate Full Ni-Silicidation Process for MOSFET RF/Analog ApplicationsYuan, J. / Woo, J. C. S. et al. | 2005
- 920
-
15:55 C-10-3 Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrodePark, H. / Choi, R. / Lee, B. H. / Young, C. D. / Chang, M. / Lee, J. C. / Hwang, H. et al. | 2005
- 922
-
16:15 C-10-4 Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFETSong, S. C. / Bae, S. H. / Sim, J. H. / Bersuker, G. / Zhang, Z. / Kirsch, P. / Majhi, P. / Moumen, N. / Zeitzoff, P. / Lee, B. H. et al. | 2005
- 924
-
9:15 D-7-1 Issus of Mixed-Signal Circuit Design in 90nm CMOS LSI Technology (Invited)Iida, T. / Ishii, H. / Nakao, T. / Hamanishi, N. et al. | 2005
- 926
-
9:45 D-7-2 A 6-bit A/D Converter for MEMS-control circuitTerada, J. / Urano, M. / Kodate, J. / Mutoh, S. / Machida, K. et al. | 2005
- 928
-
10:05 D-7-3 Low Power and High Sensitivity MRAM Sensing Scheme with Body Biased PreamplifierSugimura, T. / Deguchi, J. / Choi, H. / Sakaguchi, T. / Oh, H. / Fukushima, T. / Koyanagi, M. et al. | 2005
- 930
-
10:45 D-8-1 A Spurious Suppression Technique for Fractional-N Frequency SynthesizersTachibana, R. / Shimizu, Y. / Ishizuka, S. / Masuoka, H. et al. | 2005
- 932
-
11:05 D-8-2 Design of Differential Transformer Balun and Its Application to CMOS LNALee, Y. J. / Kim, J. J. / Yu, H. K. et al. | 2005
- 934
-
11:25 D-8-3 Design of I-Q down-converter in CMOS for wireless network applicationTeo, T. H. / Xiong, Y. Z. et al. | 2005
- 936
-
11:45 D-8-4 Zero-Crosstalk Bus Line Structure for Global Interconnects in Si ULSIKimura, M. / Ito, H. / Sugita, H. / Okada, K. / Masu, K. et al. | 2005
- 938
-
13:30 D-9-1 Development of an Integrated RF Impedance Matching Device with LPF Function using a CoFeB Magnetic/Polyimide Dielectric Hybrid Thin-Film Coplanar-LineNakayama, H. / Yamamoto, T. / Mizoguchi, Y. / Sato, T. / Yamasawa, K. / Miura, Y. / Miyake, Y. / Akie, M. / Uehara, Y. / Munakata, M. et al. | 2005
- 940
-
13:50 D-9-2 A Logarithmic Response CMOS Image Sensor with Parasitic PNP BJTLai, C. H. / Lai, L. W. / King, Y. C. et al. | 2005
- 942
-
14:10 D-9-3 Neutron-induced Soft-Error Simulation Technology for Logic CircuitsUemura, T. / Tosaka, Y. / Satoh, S. et al. | 2005
- 944
-
14:30 D-9-4 Mismatches under the Impact of Hot Carrier Stress in 0.15 mum TechnologyLin, J. C. / Chen, S. Y. / Chen, H. W. / Lin, H. C. / Jhou, Z. W. / Chou, S. / Ko, J. / Lei, T. F. / Haung, H. S. et al. | 2005
- 946
-
15:15 D-10-1 The High Voltage Anti-Trend (Invited)Mangelsdorf, C. et al. | 2005
- 948
-
15:45 D-10-2 A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)Choi, Y. H. / Ji, I. H. / Jeon, B. C. / Choi, Y. I. / Han, M. K. et al. | 2005
- 950
-
16:05 D-10-3 Wafer-level Fabrication of Compliant BumpWatanabe, N. / Asano, T. et al. | 2005
- 952
-
9:15 F-7-1 Tetrabenzoporphyrin Organic Semiconductors for Flexible Organic Thin Film Transistors and Circuits (Invited)Shea, P. B. / Kanicki, J. / Ono, N. et al. | 2005
- 954
-
9:45 F-7-2 Top-Emission Inverted Organic Light-Emitting Diodes Using Aluminum Nitride as Buffer LayerTseng, C. C. / Juang, F. S. / Liu, T. S. et al. | 2005
- 956
-
10:00 F-7-3 Improvements in the Characteristics of Blue Polymer Light-emitting Diodes by Polymer Hole Transport LayerLi, J. / Sano, T. / Hirayama, Y. / Tomita, T. / Fujii, H. / Wakisaka, K. et al. | 2005
- 958
-
10:15 F-7-4 The Improvement of Luminance Efficiency by the Insertion of Buffer layers in Flexible Organic Light-Emitting DiodesYang, T. H. / Juang, F. S. / Tsai, Y. S. / Yokoyama, M. et al. | 2005
- 960
-
10:45 F-8-1 Experimental Study of Chemical Reaction between LiF and Polyflourene Interface During Sputtering ITO Cathode for Top Emission PLED DevicesTeng, C. W. / Lee, C. C. / Liu, K. C. / Liu, W. T. / Chen, C. C. / Peng, Y. R. / Chen, L. C. et al. | 2005
- 962
-
11:00 F-8-2 Effects of thickness of organic and multi-layer anode on luminance efficiency in top-emission oraganic light-emitting diodesLin, S. J. / Ueng, H. Y. / Juang, F. S. et al. | 2005
- 964
-
11:15 F-8-3 Transparent barrier coatings for flexible organic light-emitting diode applicationsWuu, D. S. / Chen, T. N. / Chiang, C. C. / Wu, C. C. / Lin, H. B. / Chen, Y. P. / Chen, W. C. / Juang, F. S. et al. | 2005
- 966
-
11:30 F-8-4 Microscopic EL spectral imaging in polymer-blend light emitting diodesTakada, N. / Kamata, T. et al. | 2005
- 968
-
11:45 F-8-5 White Light-Emitting Device on Flexible Plastic SubstratesLee, H. / Kanicki, J. et al. | 2005
- 970
-
12:00 F-8-6 Study on characteristics of electroluminescence based on Zn complexesKwon, O. K. / Jang, Y. K. / Lee, B. J. / Kwon, Y. S. et al. | 2005
- 972
-
13:30 F-9-1 Organic Thin-film Transistors Based on n-type Organic Semiconductors (Invited)Tokito, S. et al. | 2005
- 974
-
14:00 F-9-2 Pentacene thickness dependence of FET properties in bottom contact structure; Estimation of the effective channel thicknessLim, E. / Manaka, T. / Tamura, R. / Iwamoto, M. et al. | 2005
- 976
-
14:15 F-9-3 Field-assisted Electron Injection Current in Submicron Pentacene TransistorsJo, J. / Soghomonian, V. / Bradbury, F. / Chen, H. / Heremans, J. J. et al. | 2005
- 978
-
14:30 F-9-4 Study on the Carrier Transport of Pentacene Thin Film Transistor at High TemperaturesLo, P. Y. / Pei, Z. / Hwang, J. J. / Chan, Y. J. et al. | 2005
- 980
-
14:45 F-9-5 Device Characteritics of FETs Made From p-doped Polythiophene SolutionHoshino, S. / Yoshida, M. / Uemura, S. / Kodzasa, T. / Kamata, T. et al. | 2005
- 982
-
15:15 F-10-1 Fabrication of the low operating voltage Poly(3-hexylthiophene) transistor using sputtering Al~2O~3/HfO~2/Al~2O~3 stacking insulatorLin, C. H. / Li, K. C. / Hu, J. P. / Liu, K. C. et al. | 2005
- 984
-
15:30 F-10-2 Performance Recovery of n-channel Perfluoropentacene Thin Film Transistors by High Vacuum AnnealingYokoyama, T. / Nishimura, T. / Kita, K. / Kyuno, K. / Toriumi, A. et al. | 2005
- 986
-
15:45 F-10-3 A pixel circuit for AMOLED consisting of OTFTs and OLEDChoe, K. B. / Jung, H. / Ryu, G. S. / Song, C. K. et al. | 2005
- 988
-
16:00 F-10-4 Single Grain and Single Grain Boundary Resistance of Pentacene Thin Film Characterized by Nano-scale Electrode ArrayEdura, T. / Nakata, M. / Takahashi, H. / Onozato, H. / Mizuno, J. / Tsutsui, K. / Haemori, M. / Itaka, K. / Koinuma, H. / Wada, Y. et al. | 2005
- 990
-
16:15 F-10-5 Improvement of on/off ratio of pentacene static induction transistor with ultra-thin CuPc layerWatanabe, Y. / Iechi, H. / Kudo, K. et al. | 2005
- 992
-
9:15 G-7-1 Revolution in Carbon Nanotube Synthesis - "Super Growth" (Invited)Futaba, D. N. / Hata, K. / Mizuno, K. / Yamada, T. / Namai, T. / Hayamizu, Y. / Yumura, M. / Iijima, S. et al. | 2005
- 994
-
9:45 G-7-2 Single Walled Carbon Nanotubes Grown by Chemical Vapour Deposition: Structures and Devices for Transport and OpticsAusting, D. G. / Finnie, P. / Lefebvre, J. et al. | 2005
- 996
-
10:00 G-7-3 Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN~X Passivation Films Formed by Catalytic Chemical Vapor DepositionKaminishi, D. / Ozaki, H. / Ohno, Y. / Maehashi, K. / Inoue, K. / Matsumoto, K. / Seri, Y. / Masuda, A. / Matsumura, H. / Niki, T. et al. | 2005
- 998
-
10:15 G-7-4 Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-situ Chemical Vapor DepositionRispal, L. / Stefanov, Y. / Heller, R. / Tzschockel, G. / Hess, G. / Haberle, K. / Schwalke, U. et al. | 2005
- 1000
-
10:30 G-7-5 Fermi Level Modulation of n-type Doped Single Walled Carbon Nanotube using Buried Local-Gate FET Structure by Oxygen Ion Implantation with Ultra-low Energy Ion Beam of 25eVKamimura, T. / Yamamoto, K. / Matsumoto, K. et al. | 2005