High Power AlGaN/GaN Schottky Barrier Diode With 1000 V Operation (Englisch)
- Neue Suche nach: Yoshida, S.
- Neue Suche nach: Ikeda, N.
- Neue Suche nach: Li, J.
- Neue Suche nach: Wada, T.
- Neue Suche nach: Kambayashi, H.
- Neue Suche nach: Takehara, H.
- Neue Suche nach: Materials Research Society
- Neue Suche nach: Yoshida, S.
- Neue Suche nach: Ikeda, N.
- Neue Suche nach: Li, J.
- Neue Suche nach: Wada, T.
- Neue Suche nach: Kambayashi, H.
- Neue Suche nach: Takehara, H.
- Neue Suche nach: Kuball, Martin
- Neue Suche nach: Materials Research Society
In:
GaN, AIN, InN and related materials: symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A. /
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63-68
;
2006
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:High Power AlGaN/GaN Schottky Barrier Diode With 1000 V Operation
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Beteiligte:Yoshida, S. ( Autor:in ) / Ikeda, N. ( Autor:in ) / Li, J. ( Autor:in ) / Wada, T. ( Autor:in ) / Kambayashi, H. ( Autor:in ) / Takehara, H. ( Autor:in ) / Kuball, Martin / Materials Research Society
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Kongress:Symposium, GaN, AIN, InN and related materials: symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A. / ; 2005 ; Boston, MA
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Erschienen in:MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 892 ; 63-68
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Verlag:
- Neue Suche nach: Materials Research Society
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Erscheinungsort:Warrendale, Pa.
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Erscheinungsdatum:01.01.2006
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Format / Umfang:6 pages
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Anmerkungen:"This proceedings volume is a record of the submitted papers at Symposium FF, 'GaN, AIN, InN, and Related Materials,' held November 28-December 2 at the 2005 MRS Fall Meeting Boston, Massachusetts."--Pref. Includes bibliographical references and indexes.
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Deep Ultraviolet Light Emitting Diodes With Emission Below 300 nmKhan, M. A. / Materials Research Society et al. | 2006
- 13
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Short-Period AlGaN Based Superlattices for Deep UV Light Emitting Diodes Grown By Gas Source Molecular Beam EpitaxyNikishin, S. A. / Borisov, B. A. / Kuryatkov, V. V. / Holtz, M. / Temkin, H. / Materials Research Society et al. | 2006
- 19
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Towards a Novel Broadband Spectrally Dynamic Solid State Light SourceNicol, D. B. / Gupta, S. / Li, N. / Asghar, A. / Graugnard, E. / Summers, C. / Ferguson, I. T. / Materials Research Society et al. | 2006
- 27
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Stress and Microstructure Evolution in Compositionally Graded Al~1~-~xGa~xN Buffer Layers for GaN Growth on SiWeng, X. / Raghavan, S. / Dickey, E. C. / Redwing, J. M. / Materials Research Society et al. | 2006
- 35
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X-ray Standing Wave Investigations of Si Dopant Incorporation in GaNSiebert, M. / Schmidt, T. / Flege, J. I. / Zegenhagen, J. / Lee, T.-L. / Figge, S. / Hommel, D. / Falta, J. / Materials Research Society et al. | 2006
- 43
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The Use of Cathodoluminescence During Molecular Beam Epitaxy Growth of Gallium Nitride to Determine Substrate TemperatureLee, K. / Schires, E. D. / Myers, T. H. / Materials Research Society et al. | 2006
- 49
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Scanning Tunneling Microscopy Study of Cr-Doped GaN Surface Grown by RF Plasma Molecular Beam EpitaxyHaider, M. B. / Yang, R. / Al-Brithen, H. / Constantin, C. / Smith, A. R. / Caruntu, G. / O Connor, C. J. / Materials Research Society et al. | 2006
- 55
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In Situ Investigation of Surface Stoichiometry During InGaN and GaN Growth by Plasma-Assisted Molecular Beam Epitaxy Using RHEED-TRAXSTompkins, R. P. / VanMil, B. L. / Schires, E. D. / Lee, K. / Chye, Y. / Lederman, D. / Myers, T. H. / Materials Research Society et al. | 2006
- 63
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High Power AlGaN/GaN Schottky Barrier Diode With 1000 V OperationYoshida, S. / Ikeda, N. / Li, J. / Wada, T. / Kambayashi, H. / Takehara, H. / Materials Research Society et al. | 2006
- 69
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Effects of the High-Refractive Index SiN~x Passivation on AlGaN/GaN HFETs With a Very Low Gate-Leakage CurrentKambayashi, H. / Wada, T. / Ikeda, N. / Yoshida, S. / Materials Research Society et al. | 2006
- 77
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Properties of InN Grown by High-Pressure CVDAlevli, M. / Durkaya, G. / Woods, V. / Haboeck, U. / Kang, H. / Senawiratne, J. / Strassburg, M. / Ferguson, I. T. / Hoffmann, A. / Dietz, N. et al. | 2006
- 83
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Polarity Dependence of In-Rich InGaN and InN/InGaN MQWsChe, S.-B. / Shinada, T. / Mizuno, T. / Ishitani, Y. / Yoshikawa, A. / Materials Research Society et al. | 2006
- 89
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Influence of Nitrogen Species on InN Grown by PAMBEAnderson, P. A. / Kinsey, R. J. / Kendrick, C. E. / Farrell, I. / Carder, D. / Reeves, R. J. / Durbin, S. M. / Materials Research Society et al. | 2006
- 95
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Carrier Recombination, Relaxation, and Transport Dynamics in InNChen, F. / Cartwright, A. N. / Lu, H. / Schaff, W. J. / Materials Research Society et al. | 2006
- 105
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Electron Transport Properties of InNJones, R. E. / van Genuchten, H. C. M. / Li, S. X. / Hsu, L. / Yu, K. M. / Walukiewicz, W. / Ager, J. W. / Haller, E. E. / Lu, H. / Schaff, W. J. et al. | 2006
- 113
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III-V Epitaxial Growth for Nitride DevicesDupuis, R. / Chung, T. / Lee, W. / Li, P. / Limb, J. / Ryou, J.-H. / Yoo, D. / Materials Research Society et al. | 2006
- 125
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Structural, Optical, and Magnetic Behavior of In Situ Doped, MOCVD-Grown Ga~1~-~xMn~xN Epilayers and HeterostructuresKane, M. H. / Fenwick, W. E. / Strassburg, M. / Asghar, A. / Gupta, S. / Kang, H. / Li, N. / Summers, C. J. / Ferguson, I. T. / Materials Research Society et al. | 2006
- 131
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Fe-Centers in GaN as Candidates for Spintronics ApplicationsMalguth, E. / Hoffmann, A. / Phillips, M. / Gehlhoff, W. / Materials Research Society et al. | 2006
- 137
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Characterization of a-Plane AlGaN/GaN Heterostructure Grown on r-Plane Sapphire SubstrateIwaya, M. / Okadome, Y. / Tsuchiya, Y. / Iida, D. / Miura, A. / Furukawa, H. / Honshio, A. / Miyake, Y. / Kamiyama, S. / Amano, H. et al. | 2006
- 143
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Growth and Characterization of Semipolar InGaN/GaN Multiple Quantum Wells and Light-Emitting Diodes on (10-1-1) GaN TemplatesChakraborty, A. / Onuma, T. / Baker, T. J. / Keller, S. / Chichibu, S. F. / DenBaars, S. P. / Nakamura, S. / Speck, J. S. / Mishra, U. K. / Materials Research Society et al. | 2006
- 151
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InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AlN TemplatesSyrkin, A. / Usikov, A. / Soukhoveev, V. / Kovalenkov, O. / Ivantsov, V. / Dmitriev, V. / Collins, C. / Readinger, E. / Shmidt, N. / Nikishin, S. et al. | 2006
- 155
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Modification of InN Properties by Interactions With Hydrogen and NitrogenLosurdo, M. / Giangregorio, M. M. / Bruno, G. / Kim, T.-H. / Wu, P. / Choi, S. / Morse, M. / Brown, A. / Masia, F. / Polimeni, A. et al. | 2006
- 161
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Temperature Dependence of Transport Properties of InN FilmsThakur, J. S. / Naik, R. / Naik, V. M. / Haddad, D. / Auner, G. W. / Lu, H. / Schaff, W. J. / Materials Research Society et al. | 2006
- 169
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Reliability and Degradation Modes of 280 nm Deep UV LEDs on SapphireGong, Z. / Chhajed, S. / Gaevski, M. E. / Sun, W. H. / Adivarahan, V. / Shatalov, M. / Khan, M. A. / Materials Research Society et al. | 2006
- 175
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Origins of Parasitic Emissions from 353 nm AlGaN-Based UV LEDs Over SiC SubstratesPark, J.-S. / Fothergill, D. W. / Wellenius, P. / Bishop, S. M. / Muth, J. F. / Davis, R. F. / Materials Research Society et al. | 2006
- 181
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Comparison of the Electroluminescence of Blue and Deep-UV Light-Emitting Diodes at Elevated TemperaturesCao, X.-A. / Stecher, T. / LeBoeuf, S. F. / Materials Research Society et al. | 2006
- 187
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Analysis of High-Power Packages for White-Light-Emitting Diode Lamps With Remote PhosphorLuo, H. / Kim, J. K. / Xi, Y. / Schubert, E. F. / Cho, J. / Sone, C. / Park, Y. / Materials Research Society et al. | 2006
- 195
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Al Mole Fraction Dependence of Deep Levels in AlGaN/GaN-HEMT Structures Estimated by CV ProfilingKikawa, J. / Imada, K. / Yamada, T. / Tsuchiya, T. / Hiroyama, Y. / Iwami, M. / Araki, T. / Suzuki, A. / Nanishi, Y. / Materials Research Society et al. | 2006
- 203
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Epitaxal Growth of InGaN Quantum Dots Grown by MOVPE: Effect of Capping Process on the Structural and Optical PropertiesYamaguchi, T. / Sebald, K. / Gutowski, J. / Figge, S. / Hommel, D. / Materials Research Society et al. | 2006
- 203
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Epitaxial growth of InGaN quantum dots grown by MOVPE: Effect of capping process on structural and optical propertiesYamaguchi, Tomohiro / Sebald, Kathrin / Gutowski, Jürgen / Figge, Stephan / Hommel, Detlef et al. | 2006
- 209
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The Mean Inner Potential of GaN Measured From Nanowires Using Off-Axis Electron HolographyWeng, A. S. / Ho, G. W. / Dunin-Borkowski, R. / Kasama, T. / Oliver, R. A. / Costa, P. M. F. J. / Humphreys, C. J. / Materials Research Society et al. | 2006
- 215
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Raman Scattering of Self-Assembled Gallium Nitride Nanorods Synthesized by Plasma-Assisted Molecular Beam EpitaxyWang, D. / Tin, C.-C. / Williams, J. R. / Park, M. / Park, Y. S. / Park, C. M. / Kang, T. W. / Yang, W.-C. / Materials Research Society et al. | 2006
- 221
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A Non-Thermal Plasma Reactor for the Synthesis of Gallium Nitride NanocrystalsAnthony, R. J. / Thimsen, E. / Johnson, J. / Campbell, S. A. / Kortshagen, U. / Materials Research Society et al. | 2006
- 225
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Opto-Electronic Simulation of GaN Nanowire LasersChen, L. / Towe, E. / Materials Research Society et al. | 2006
- 231
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Morphological Study of InN Films and Nanorods Grown by H-MOVPEPark, H. J. / Kang, S. W. / Kryliouk, O. / Anderson, T. / Materials Research Society et al. | 2006
- 239
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Analysis of the Quantum Efficiency of GaInN/GaN Light Emitting Diodes in the Range of 390-580 nmZhao, W. / Li, Y. / Xia, Y. / Zhu, M. / Detchprohm, T. / Schubert, E. F. / Wetzel, C. / Materials Research Society et al. | 2006
- 245
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Visible Light-Emitting Diodes Grown by Plasma Assisted Molecular Beam Epitaxy on Hydride Vapor-Phase Epitaxy GaN Templates and the Development of Dichromatic (Phosphorless) White LEDsCabalu, J. S. / Williams, A. D. / Chen, T.-C. P. / France, R. / Moustakas, T. D. / Materials Research Society et al. | 2006
- 251
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Electrical Characterization of Blue Light Emitting Diodes as a Function of TemperatureMurthy, M. / Tegueu, A. M. K. / Awaah, M. A. / Wang, D. / Park, M. / Walker, F. J. / Kumar, D. K. / Materials Research Society et al. | 2006
- 257
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Study of Laser-Debonded GaN Light Emitting DiodesChan, C. P. / Yue, T. M. / Surya, C. / Ng, A. M. C. / Djurisic, A. B. / Liu, C. K. / Li, M. / Materials Research Society et al. | 2006
- 263
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Role of Deep Levels in DC Current Aging of GaN/InGaN Light-Emitting Diodes Studied by Capacitance and Photocurrent SpectroscopyCastaldini, A. / Cavallini, A. / Rigutti, L. / Meneghini, M. / Levada, S. / Meneghesso, G. / Zanoni, E. / Harle, V. / Zahner, T. / Zehnder, U. et al. | 2006
- 269
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3D Simulations on Realistic GaN-Based Light-Emitting DiodesLi, S. / Li, Z. Q. / Shmatov, O. / Xia, C. S. / Lu, W. / Materials Research Society et al. | 2006
- 277
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Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic TransducersWang, Q. / Xu, J. / Huang, C. / Auner, G. W. / Materials Research Society et al. | 2006
- 283
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Mechanism of Current Leakage in Ni Schottky Diodes on Cubic GaN and Al~xGa~1~-~xN EpilayersAs, D. J. / Potthast, S. / Fernandez, J. / Lischka, K. / Nagasawa, H. / Abe, M. / Materials Research Society et al. | 2006
- 289
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Simulation of Self-Heating and Temperature Effect in GaN-Based Metal-Semiconductor Field-Effect TransistorTurin, V. D. / Balandin, A. A. / Materials Research Society et al. | 2006
- 295
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Double-Ion-Implanted GaN MESFETs With Extremely Low Source/Drain ResistanceNomoto, K. / Ito, N. / Tajima, T. / Kasai, T. / Mishima, T. / Inada, T. / Satoh, M. / Nakamura, T. / Materials Research Society et al. | 2006
- 301
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Electrical Domains and Sub-Millimeter Signal Generation in AlGaN/GaN SuperlatticesGordion, I. / Manasson, A. / Litvinov, V. I. / Materials Research Society et al. | 2006
- 307
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Growth, Processing and Characterization of GaN/AlGaN/SiC Vertical n-p DiodesBoeykens, S. / Leys, M. / Germain, M. / Poortmans, J. / Van Daele, B. / Van Tendeloo, S. / Belmans, R. / Borghs, G. / Materials Research Society et al. | 2006
- 313
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Fabrication and Device Characteristics of Bulk GaN-Based Schottky DiodesZhou, Y. / Wang, D. / Ahyi, C. / Tin, C.-C. / Williams, J. / Park, M. / Williams, N. M. / Hanser, A. / Materials Research Society et al. | 2006
- 319
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Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors Using GaInN Base Cap Layer and Selective Epitaxial GrowthShah, J. M. / Gessmann, T. / Luo, H. / Xi, Y. / Chen, K. / Kim, J. K. / Schubert, E. F. / Materials Research Society et al. | 2006
- 325
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Design and Development of MBE Grown AlGaN/GaN HEMT Devices on SiC Substrates for RF ApplicationsSood, A. K. / Singh, R. / Puri, Y. R. / Clarke, F. W. / Dabiran, A. / Chow, P. / Deng, J. / Hwang, J. C. M. / Materials Research Society et al. | 2006
- 337
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Fabrication and Electrical Characteristics of Ti/Al Ohmic Contact to Si^+ Implanted GaNIto, N. / Suzuki, A. / Kawamura, M. / Nomoto, K. / Kasai, T. / Mishima, T. / Inada, T. / Nakamura, T. / Satoh, M. / Materials Research Society et al. | 2006
- 341
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W~2B Based High Thermal Stability Ohmic Contacts to n-GaNKhanna, R. / Pearton, S. J. / Kao, C. J. / Kravchenko, I. / Ren, F. / Chi, G. C. / Dabiran, A. / Osinsky, A. / Materials Research Society et al. | 2006
- 351
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Anti-Diffusion Barriers for Gold-Based Metallization to p-GaNPiotrowska, A. / Kaminska, E. / Guziewicz, M. / Dynowska, E. / Stonert, A. / Turos, A. / Figge, S. / Kroger, R. / Hommel, D. / Materials Research Society et al. | 2006
- 357
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Substrate Influence on the High-Temperature Annealing Behavior of GaN: Si vs. SapphirePastor, D. / Cusco, R. / Artus, L. / Iborra, E. / Jimenez, J. / Peiro, F. / Gonzalez-Diaz, G. / Calleja, E. / Materials Research Society et al. | 2006
- 363
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Planarization of GaN by the Etch-Back MethodWilliams, A. D. / Moustakas, T. D. / Materials Research Society et al. | 2006
- 369
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GaN-Based Light Emitting Diode With Transparent Nanoparticles-Embedded p-Ohmic ElectrodeSong, J. O. / Kang, H. / Nicol, D. / Ferguson, I. T. / Hong, H.-G. / Seong, T.-Y. / Materials Research Society et al. | 2006
- 377
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III-Nitride Epitaxial Material on Large-Diameter Semi-Insulating SiC Substrates for High-Power RF TransistorsSaxler, A. W. / Hutchins, E. L. / Jenny, J. / Blew, A. / Materials Research Society et al. | 2006
- 383
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Normally Off-Mode AlGaN/GaN Heterostructure Field Effect Transistor Using p-Type Gate ContactTsuyukuchi, N. / Nagamatsu, K. / Hirose, Y. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. / Materials Research Society et al. | 2006
- 389
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Flip-Chip Mounting for Improved Thermal Management of AlGaN/GaN HFETsJi, H. / Sarua, A. / Kuball, M. / Das, J. / Ruythooren, W. / Germain, M. / Borghs, G. / Materials Research Society et al. | 2006
- 397
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Low-Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETsSaripalli, Y. N. / Zeng, C. / Jin, Y. / Long, J. P. / Grenko, J. A. / Dandu, K. / Johnson, M. A. L. / Barlage, D. W. / Materials Research Society et al. | 2006
- 405
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Perturbation of Charges in AlGaN/GaN Heterostructures Studied by Nanoscale Capacitance-Voltage TechniqueKoley, G. / Lakshmanan, L. / Materials Research Society et al. | 2006
- 411
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Weak antilocalization in polarization-doped AlxGa 1-xN/GaN heterostructuresThillosen, N. / Schapers, T. / Kaluza, N. / Hardtdegen, H. / Guzenko, V.A. et al. | 2006
- 411
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Weak Antilocalization in Polarization-Doped AlGaN/GaN HeterostructuresThillosen, N. H. / Schapers, T. / Kaluza, N. / Hardtdegen, H. / Guzenko, V. / Materials Research Society et al. | 2006
- 417
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Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN LayersSimon, J. / Wang, K. / Xing, H. / Jena, D. / Rajan, S. / Materials Research Society et al. | 2006
- 423
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Highly Doped p-Type a-Plane GaN Grown on r-Plane Sapphire SubstrateTsuchiya, Y. / Okadome, Y. / Furukawa, H. / Honshio, A. / Miyake, Y. / Kawashima, T. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2006
- 429
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ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light EmittersOsinsky, A. V. / Dong, J. W. / Xie, J. Q. / Hertog, B. / Dabiran, A. M. / Chow, P. P. / Pearton, S. J. / Norton, D. P. / Look, D. C. / Schoenfeld, W. et al. | 2006
- 439
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MgZnO Nanocrystallites: Photoluminescence and Phonon PropertiesMorrison, J. L. / Chen, X.-B. / Huso, J. / Hoeck, H. / Mitchell, J. / Bergman, L. / Zheleva, T. / Materials Research Society et al. | 2006
- 445
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Plasma-Assisted MOCVD Growth of ZnO Thin FilmsLosurdo, M. / Giangregorio, M. M. / Capezzuto, P. / Bruno, G. / Malandrino, G. / Blandino, M. / Fragala, I. / Materials Research Society et al. | 2006
- 451
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Metal Organic Chemical Vapor Deposition of ZnOFenwick, W. E. / Woods, V. T. / Pan, M. / Li, N. / Kane, M. H. / Gupta, S. / Rengarajan, V. / Nause, J. / Ferguson, I. T. / Materials Research Society et al. | 2006
- 457
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Characteristics of a Phosphorus-Doped p-Type ZnO Film by MBEXiu, F. X. / Yang, Z. / Leelaprasanna, M. J. / Liu, J. L. / Materials Research Society et al. | 2006
- 465
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A Semipolar (10-1-3) InGaN/GaN Green Light Emitting DiodeSharma, R. / Pattison, P. M. / Baker, T. J. / Haskell, B. A. / Farrell, R. M. / Masui, H. / Wu, F. / DenBaars, S. P. / Speck, J. S. / Nakamura, S. et al. | 2006
- 471
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Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode StructuresXia, Y. / Li, Y. / Zhao, W. / Zhu, M. / Detchprohm, T. / Schubert, E. F. / Wetzel, C. / Materials Research Society et al. | 2006
- 479
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Time-Resolved Spectroscopy of Excitons Bound at Shallow Neutral Donors in HVPE GaNMonemar, B. / Paskov, P. P. / Bergman, J. P. / Malinauskas, T. / Jarasiunas, K. / Toropov, A. A. / Shubina, T. V. / Usui, A. / Materials Research Society et al. | 2006
- 485
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Room Temperature Strong Coupling in Low Finesse GaN MicrocavitiesSellers, I. R. / Semond, F. / Leroux, M. / Massies, J. / Disseix, P. / Malpuech, G. / Henneghien, A.-L. / Leymarie, J. / Vassan, A. / Materials Research Society et al. | 2006
- 491
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Optical Properties of GaN Photonic Crystal Membrane Nanocavities at Blue WavelengthsChoi, Y. S. / Meier, C. / Sharma, R. / Hennessy, K. / Haberer, E. D. / Nakamura, S. / Hu, E. L. / Materials Research Society et al. | 2006
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Growth of Large AlN Single Crystals Along the [0001] DirectionHerro, Z. G. / Zhuang, D. / Schlesser, R. / Collazo, R. / Sitar, Z. / Materials Research Society et al. | 2006
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Oxidation of Aluminum Nitride for Defect CharacterizationEdgar, J. H. / Gu, Z. / Taggart, K. / Chaudhuri, J. / Nyakiti, L. / Lee, R. G. / Witt, R. / Materials Research Society et al. | 2006
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High Quality GaN Layers Grown on Slightly Miscut Sapphire WafersBruckner, P. / Feneberg, M. / Thonke, K. / Habel, F. / Scholz, F. / Materials Research Society et al. | 2006
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Structural Analysis of ELO-GaN Grown on Sapphire Using the X-ray Micro-Beam of an 8-GeV Storage RingMiyajima, T. / Takeda, S. / Kurihara, H. / Watanabe, K. / Kato, M. / Hara, N. / Tsusaka, Y. / Matsui, J. / Kudo, Y. / Tomiya, S. et al. | 2006
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Intersecting Basal Plane and Prismatic Stacking Fault Structures in GaN/AlN Epilayers on On-Axis and Off-Cut 6H-SiC SubstratesBai, J. / Huang, X. / Dudley, M. / Materials Research Society et al. | 2006
- 537
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Dislocation Reduction and Structural Properties of GaN Layers Grown on N^+-Implanted AlN/Si (111) SubstratesJamil, M. / Grandusky, J. R. / Jindal, V. / Tripathi, N. / Sandvik, F. S. / Materials Research Society et al. | 2006
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Oxygen Segregation to Nanopipes in Gallium NitrideHawkridge, M. E. / Cherns, D. / Materials Research Society et al. | 2006
- 551
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Polarized Photoluminescence Study on AlGaN of AlGaN/GaN HeterostructureKitagawa, S. / Kosaka, K. / Tsuchiya, T. / Suzuki, A. / Araki, T. / Nanishi, Y. / Materials Research Society et al. | 2006
- 557
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Structural and Optical Properties of MOCVD InAlN EpilayersHernandez, S. / Wang, K. / Amabile, D. / Nogales, E. / Pastor, D. / Cusco, R. / Artus, L. / Martin, R. W. / O Donnell, K. P. / Watson, I. M. et al. | 2006
- 563
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Surface Recombination and Vacuum/GaN/AlGaN Surface Quantum WellsZhang, X. / Wellenius, I. P. / Cai, A. / Muth, J. F. / Roberts, J. / Rajagopal, P. / Cook, J. / Piner, E. / Linthicum, K. / Materials Research Society et al. | 2006
- 569
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Cu Induced Optical Transitions in MOCVD Grown Cu Doped GaNSenawiratne, J. / Strassburg, M. / Payne, A. / Asghar, A. / Fenwick, W. / Li, N. / Ferguson, I. / Dietz, N. / Materials Research Society et al. | 2006
- 575
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Effects of GaN Passivation With SiO~2 and SiN~x Studied by Photoluminescence and Surface Potential Electric Force MicroscopyChevtchenko, S. / Reshchikov, M. A. / Zhu, K. / Moon, Y.-T. / Baski, A. A. / Morkoc, H. / Materials Research Society et al. | 2006
- 581
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Refractive Indices of A-Plane GaN Thin Films on R-Plane SapphireCai, A. / Wellenius, I. P. / Gerhold, M. / Muth, J. F. / Osinsky, A. / Xie, J. Q. / Dong, J. W. / Materials Research Society et al. | 2006
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High Quantum Efficiency of Photoluminescence in GaN and ZnOReschikov, M. A. / Gu, X. / Nemeth, B. / Nause, J. / Morkoc, H. / Materials Research Society et al. | 2006
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Photoluminescence in Wurtzite GaN Containing CarbonReshchikov, M. A. / Patillo, R. H. / Travis, K. C. / Materials Research Society et al. | 2006
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Characterization of the Blue Emission of Tm/Er Co-Implanted GaNRoqan, I. S. / Trager-Cowan, C. / Hourahine, B. / Lorenz, K. / Nogales, E. / O Donnell, K. P. / Martin, R. W. / Alves, E. / Ruffenach, S. / Briot, O. et al. | 2006
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Correlation Between Resistivity and Yellow Luminescence Intensity of GaN Layers Grown by MOCVDHinoki, A. / Hiroyama, Y. / Tsuchiya, T. / Yamada, T. / Iwami, M. / Imada, K. / Kikawa, J. / Araki, T. / Suzuki, A. / Nanishi, Y. et al. | 2006
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Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaNLorenz, K. / Nogales, E. / Nedelec, R. / Penner, J. / Vianden, R. / Alves, E. / Martin, R. W. / O Donnell, K. P. / Materials Research Society et al. | 2006
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Donor-Like Deep Level Defects in GaN Characterized by Double-Correlation Deep Level Transient SpectroscopyAhoujja, M. / Hogsed, M. / Yeo, Y. K. / Hengehold, R. L. / Materials Research Society et al. | 2006
- 625
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A Microspectroscopic Study of Cap Damage in Annealed RE-Doped AlN-Capped GaNNogales, E. / Lorenz, K. / Wang, K. / Roqan, I. S. / Martin, R. W. / O Donnell, K. P. / Alves, E. / Ruffenach, S. / Briot, O. / Materials Research Society et al. | 2006
- 631
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SiH~4 Exposure of GaN Surfaces: A Useful Tool for Highlighting DislocationsOliver, R. A. / Kappers, M. J. / Sumner, J. / Datta, R. / Humphreys, C. J. / Materials Research Society et al. | 2006
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Misfit Dislocations in Green-Emitting InGaN/GaN Quantum Well StructuresCosta, P. M. F. J. / Datta, R. / Kappers, M. J. / Vickers, M. E. / Humphreys, C. J. / Materials Research Society et al. | 2006
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Comparative Investigation of Quantum-Dot-Like Localization Centers in InGaN Quantum Well and Quantum Dot StructuresSebald, K. / Lohmeyer, H. / Gutowski, J. / Yamaguchi, T. / Hommel, D. / Materials Research Society et al. | 2006
- 653
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Stress Evolution During the Early Stages of AlN Vapor GrowthWu, B. / Bai, J. / Tassev, V. L. / Nakarmi, M. L. / Sun, W. / Huang, X. / Dudley, M. / Zhang, H. / Bliss, D. F. / Lin, J. et al. | 2006
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Characterization of Lattice Mosaic of a-Plane GaN Grown on r-Plane Sapphire by Metalorganic Vapor-Phase EpitaxyKusakabe, K. / Ando, S. / Ohkawa, K. / Materials Research Society et al. | 2006
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Study of ELOG GaN for Application in the Fabrication of Micro-Channels for Optoelectronic DevicesRodak, L. E. / Ann, N. J. B. / Kasarla, K. R. / Yang, N. / Korakakis, D. / Materials Research Society et al. | 2006
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What Does an (a+c) Dislocation Core Look Like in Wurtzite GaN?Belabbas, I. / Nouet, G. / Bere, A. / Chen, J. / Petit, S. / Belkhir, M. A. / Ruterana, P. / Komninou, P. / Materials Research Society et al. | 2006
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Characterization of Nitride Thin Films by Electron Backscatter Diffraction and Electron Channeling Contrast ImagingTrager-Cowan, C. / Sweeney, F. / Wilkinson, A. J. / Trimby, P. W. / Day, A. P. / Gholinia, A. / Schmidt, N.-H. / Parbrook, P. J. / Watson, I. M. / Materials Research Society et al. | 2006
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Polarity Control of LP-MOVPE GaN Using N~2 as the Carrier GasMita, S. / Collazo, R. / Schlesser, R. / Sitar, Z. / Materials Research Society et al. | 2006
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Effects of GaN Template Annealing on the Optical and Morphological Quality of the Homoepitaxially Overgrown GaN LayerGrandusky, J. R. / Jindal, V. / Jamil, M. / Shahedipour-Sandvik, F. / Materials Research Society et al. | 2006
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A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN InterlayerCherns, P. D. / McAleese, C. / Barnard, J. S. / Kappers, M. J. / Humphreys, C. J. / Materials Research Society et al. | 2006
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Growth of Nonpolar AlN and AlGaN on 4H-SiC (1-100) by Molecular Beam EpitaxyArmitage, R. / Horita, M. / Suda, J. / Kimoto, T. / Materials Research Society et al. | 2006
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Epitaxial c-GaAs/h-GaN HeterostructuresChaldyshev, V. V. / Musikhin, Y. G. / Bert, N. A. / Nielsen, B. / Mendez, E. E. / Ma, Z. / Holden, T. / Materials Research Society et al. | 2006
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Growth of c-GaN Films on the Nitridated beta-Ga~2O~3 Substrates Using RF-MBEAraki, T. / Morioka, C. / Wada, J. / Fujiwara, K. / Minami, H. / Nanishi, Y. / Ohira, S. / Suzuki, N. / Shishido, T. / Materials Research Society et al. | 2006
- 723
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Microstructure and Strain-Free Lattice Parameters of Sc~xGa~1~-~xN FilmsMoram, M. A. / Joyce, T. B. / Chalker, P. R. / Barber, Z. H. / Humphreys, C. J. / Materials Research Society et al. | 2006
- 729
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Compensation in Be-Doped Gallium Nitride Grown Using Molecular Beam EpitaxyLee, K. / VanMil, B. / Luo, M. / Myers, T. H. / Armstrong, A. / Ringel, S. A. / Rummukainen, M. / Saarinen, K. / Materials Research Society et al. | 2006
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What Makes Good Templates for HVPE GaN Growth?Dam, C. E. C. / Grzegorczyk, A. P. / Hageman, P. R. / Larsen, P. K. / Materials Research Society et al. | 2006
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Thick AlN Layers Grown by HVPE on Sapphire SubstratesSoukhoveev, V. / Usikov, A. / Kovalenkov, O. / Ivantsov, V. / Syrkin, A. / Dmitriev, V. / Collins, C. / Wraback, M. / Materials Research Society et al. | 2006
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Temperature and Dislocation Density Effects on the Thermal Conductivity of Bulk Gallium NitrideMion, C. / Muth, J. F. / Preble, E. A. / Hanser, D. / Materials Research Society et al. | 2006
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Rapid Growth of Bulk GaN Crystal Using GaN Powder as Source MaterialWu, H. / Spinelli, J. / Konkapaka, P. / Spencer, M. G. / Materials Research Society et al. | 2006
- 763
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Defect Content Evaluation in Single-Crystal AlN WafersBondokov, R. T. / Morgan, K. E. / Shetty, R. / Liu, W. / Slack, G. A. / Goorsky, M. / Schowalter, L. J. / Materials Research Society et al. | 2006
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Atomic Force Microscope Study on Native AlN SubstratesSchujman, S. B. / Liu, W. / Meyer, N. / Smart, J. A. / Schowalter, L. J. / Materials Research Society et al. | 2006
- 775
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Crystal Growth and Defect Characterization of AlN Single CrystalsWang, S. / Raghothamachar, B. / Dudley, M. / Timmerman, A. G. / Materials Research Society et al. | 2006
- 781
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Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport From a Gallium Oxide (Ga~2O~3) Powder SourceRaghothamachar, B. / Konkapaka, P. / Wu, H. / Dudley, M. / Spencer, M. / Materials Research Society et al. | 2006
- 789
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MOCVD Growth and Characterization of AlGaInN Nanowires and NanostructuresHan, J. / Kim, K. / Su, J. / Gherasimova, M. / Nurmikko, A. V. / Chichibu, S. F. / Broadbridge, C. / Materials Research Society et al. | 2006
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High Degree of Crystalline Perfection in Spontaneously Grown GaN NanowiresBertness, K. A. / Schlager, J. B. / Sanford, N. A. / Roshko, A. / Harvey, T. E. / Davydov, A. V. / Levin, I. / Vaudin, M. D. / Barker, J. M. / Blanchard, P. T. et al. | 2006
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Microphotoluminescence Studies on Single GaN NanocolumnsSebald, K. / Gutowski, J. / Thillosen, N. / Montanari, S. / Meijers, R. / Calarco, R. / Kaluza, N. / Hardtdegen, H. / Luth, H. / Materials Research Society et al. | 2006
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Quantum-Confined Stark Effect and Polarization Field in Single Quantum Well InGaN/GaN LEDsKaplar, R. J. / Kurtz, S. R. / Koleske, D. D. / Materials Research Society et al. | 2006
- 825
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Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN SubstrateDworzak, M. / Stempel, T. / Hoffmann, A. / Franssen, G. / Grzanka, S. / Suski, T. / Czernecki, R. / Leszczynski, M. / Grzegory, I. / Materials Research Society et al. | 2006
- 831
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Quantum Well Network Structures: Investigating Long-Range Thickness Fluctuations in Single InGaN/GaN Quantum Wellsvan der Laak, N. K. / Oliver, R. A. / Kappers, M. J. / Humphreys, C. J. / Materials Research Society et al. | 2006
- 837
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Surface Morphology and Island Shape of MOVPE Grown InGaN Nano-Island Ensembles Studied by STMGangopadhyay, S. / Schmidt, T. / Einfeldt, S. / Yamaguchi, T. / Hommel, D. / Falta, J. / Materials Research Society et al. | 2006
- 843
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Near-Field Photoluminescence Spectroscopy of InGaN Quantum DotsMintairov, A. M. / Merz, J. L. / Sizov, D. S. / Sizov, V. S. / Lundin, V. V. / Usov, S. O. / Zavarin, E. E. / Tsatsul nikov, A. F. / Musikhin, Y. G. / Vlasov, A. S. et al. | 2006