Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC (Englisch)
- Neue Suche nach: Kalabukhova, E. N.
- Neue Suche nach: Savchenko, D. V.
- Neue Suche nach: Greulich-Weber, S.
- Neue Suche nach: Bulanyi, M. F.
- Neue Suche nach: Omelchenko, S. A.
- Neue Suche nach: Khmelenko, O. V.
- Neue Suche nach: Gorban, A. A.
- Neue Suche nach: Mokhov, E. N.
- Neue Suche nach: Kalabukhova, E. N.
- Neue Suche nach: Savchenko, D. V.
- Neue Suche nach: Greulich-Weber, S.
- Neue Suche nach: Bulanyi, M. F.
- Neue Suche nach: Omelchenko, S. A.
- Neue Suche nach: Khmelenko, O. V.
- Neue Suche nach: Gorban, A. A.
- Neue Suche nach: Mokhov, E. N.
- Neue Suche nach: Devaty, Robert Philip
- Neue Suche nach: Larkin, David J.
- Neue Suche nach: Saddow, Stephen E.
In:
International Conference on Silicon Carbide and Related Materials
;
651-654
;
2006
-
ISBN:
-
ISSN:
- Aufsatz (Konferenz) / Print
-
Titel:Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC
-
Beteiligte:Kalabukhova, E. N. ( Autor:in ) / Savchenko, D. V. ( Autor:in ) / Greulich-Weber, S. ( Autor:in ) / Bulanyi, M. F. ( Autor:in ) / Omelchenko, S. A. ( Autor:in ) / Khmelenko, O. V. ( Autor:in ) / Gorban, A. A. ( Autor:in ) / Mokhov, E. N. ( Autor:in ) / Devaty, Robert Philip / Larkin, David J.
-
Kongress:International Conference on Silicon Carbide and Related Materials ; 2005 ; Pittsburgh, Pa.
-
Erschienen in:MATERIALS SCIENCE FORUM ; 527/529 ; 651-654
-
Verlag:
- Neue Suche nach: Trans Tech Publications
-
Erscheinungsort:Stafa-Zuerich , United Kingdom
-
Erscheinungsdatum:01.01.2006
-
Format / Umfang:4 pages
-
Anmerkungen:Includes bibliographical references and index.
-
ISBN:
-
ISSN:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
-
Reduction of Dislocations in the Bulk Growth of SiC CrystalsNakamura, D. et al. | 2006
- 9
-
The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single CrystalsRost, H. J. / Schmidbauer, M. / Siche, D. et al. | 2006
- 15
-
Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical HeatersDrachev, R. / Deyneka, E. / Rhodes, C. / Schupp, J. / Sudarshan, T. S. et al. | 2006
- 21
-
Halide-CVD Growth of Bulk SiC CrystalsPolyakov, A. Y. / Fanton, M. A. / Skowronski, M. / Chung, H. J. / Nigam, S. / Huh, S. W. et al. | 2006
- 27
-
Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiCNigam, S. / Chung, H. J. / Huh, S. W. / Grim, J. / Polyakov, A. Y. / Fanton, M. A. / Weiland, B. / Snyder, D. W. / Skowronski, M. et al. | 2006
- 31
-
Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC SubstratesJenny, J. R. / Malta, D. P. / Tsvetkov, V. T. / Das, M. K. / Hobgood, H. M. D. / Carter, C. H. et al. | 2006
- 35
-
Growth of Micropipe Free Crystals on 4H-SiC {03-38} SeedsFurusho, T. / Kobayashi, R. / Nishiguchi, T. / Sasaki, M. / Hirai, K. / Hayashi, T. / Kinoshita, H. / Shiomi, H. et al. | 2006
- 39
-
Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT)Basceri, C. / Khlebnikov, I. / Khlebnikov, Y. / Muzykov, P. / Sharma, M. / Stratiy, G. / Silan, M. / Balkas, C. M. et al. | 2006
- 43
-
Growth and Characterization of Large Diameter 6H and 4H SiC Single CrystalsGupta, A. / Semenas, E. / Emorhokpor, E. / Chen, J. / Zwieback, I. / Souzis, A. E. / Anderson, T. et al. | 2006
- 47
-
Growth of SiC Boules with Low Boron ConcentrationFanton, M. A. / Cavalero, R. L. / Ray, R. G. / Weiland, B. E. / Everson, W. / Snyder, D. W. / Gamble, R. D. / Oslosky, E. et al. | 2006
- 51
-
Resistivity Distribution in Undoped 6H-SiC Boules and WafersLi, Q. / Polyakov, A. Y. / Skowronski, M. / Sanchez, E. K. / Loboda, M. J. / Fanton, M. A. / Bogart, T. / Gamble, D. / Smirnov, N. B. / Makarov, Y. N. et al. | 2006
- 55
-
The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder SourceKim, K. M. / Seo, S. H. / Kim, J. W. / Song, J. S. / Oh, M. H. / Bahng, W. / Kim, E. D. et al. | 2006
- 59
-
A Study of Nitrogen Incorporation in PVT Growth of n^+ 4H SiCHansen, D. M. / Chung, G. / Loboda, M. J. et al. | 2006
- 63
-
In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray ImagingChaussende, D. / Wellmann, P. J. / Ucar, M. / Pons, M. / Madar, R. et al. | 2006
- 67
-
Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial CrystalsDhanaraj, G. / Chen, Y. / Dudley, M. / Zhang, H. et al. | 2006
- 71
-
Processing of Poly-SiC Substrates with Large Grains for Wafer-BondingChichignoud, G. / Auvray, L. / Blanquet, E. / Anikin, M. / Pernot, E. / Bluet, J. M. / Chaudouet, P. / Mermoux, M. / Moisson, C. / Letertre, F. et al. | 2006
- 75
-
Modeling and Experimental Verification of SiC M-PVT Bulk Crystal GrowthWellmann, P. J. / Muller, R. / Pons, M. et al. | 2006
- 79
-
Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiCWellmann, P. J. / Queren, D. / Muller, R. / Sakwe, S. A. / Kunecke, U. et al. | 2006
- 83
-
High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible DesignKu, K. R. / Kim, J. G. / Seo, J. D. / Lee, J. Y. / Kyun, M. O. / Lee, W. J. / Lee, G. H. / Kim, I. S. / Shin, B. C. et al. | 2006
- 87
-
Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal GrowthGrasza, K. / Tymicki, E. / Kisielewski, J. et al. | 2006
- 91
-
The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation MethodKim, J. W. / Seo, S. H. / Kim, K. M. / Song, J. S. / Kim, T. S. / Oh, M. H. et al. | 2006
- 95
-
Polytype Control in 6H-SiC Grown via Sublimation MethodLi, X. X. / Jiang, S. Z. / Hu, X. B. / Dong, J. / Li, J. / Chen, X. F. / Wang, L. / Xu, X. G. / Jiang, M. H. et al. | 2006
- 99
-
Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT MethodLatu-Romain, L. / Chaussende, D. / Balloud, C. / Juillaguet, S. / Rapenne, L. / Pernot, E. / Camassel, J. / Pons, M. / Madar, R. et al. | 2006
- 103
-
Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk CrystalsFanton, M. A. / Li, Q. / Polyakov, A. Y. / Cavalero, R. L. / Ray, R. G. / Weiland, B. E. / Skowronski, M. et al. | 2006
- 107
-
SiC HTCVD Simulation Modified by Sublimation EtchingKitou, Y. / Makino, E. / Ikeda, K. / Nagakubo, M. / Onda, S. et al. | 2006
- 111
-
Gas Fed Top-Seeded Solution Growth of Silicon CarbideChaussende, D. / Pons, M. / Madar, R. et al. | 2006
- 115
-
Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary SolutionYashiro, N. / Kusunoki, K. / Kamei, K. / Hasebe, M. / Ujihara, T. / Nakajima, K. et al. | 2006
- 119
-
Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation TechniqueKusunoki, K. / Kamei, K. / Okada, N. / Yashiro, N. / Yauchi, A. / Ujihara, T. / Nakajima, K. et al. | 2006
- 123
-
Growth of Cubic Silicon Carbide Crystals from SolutionEid, J. / Santailler, J. L. / Ferrand, B. / Ferret, P. / Pesenti, J. / Basset, A. / Passero, A. / Mantzari, A. / Polychroniadis, E. K. / Balloud, C. et al. | 2006
- 129
-
Recent Progress of SiC Hot-Wall Epitaxy and Its ModelingNishizawa, S. / Pons, M. et al. | 2006
- 135
-
Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production NeedsThomas, B. / Hecht, C. / Stein, R. / Friedrichs, P. et al. | 2006
- 141
-
Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V~f Drift in SiC Bipolar Power DevicesSumakeris, J. J. / Bergman, J. P. / Das, M. K. / Hallin, C. / Hull, B. A. / Janzen, E. / Lendenmann, H. / O Loughlin, M. J. / Paisley, M. J. / Ha, S. et al. | 2006
- 147
-
Investigation of In-Grown Dislocations in 4H-SiC Epitaxial LayersKojima, K. / Kato, T. / Kuroda, S. / Okumura, H. / Arai, K. et al. | 2006
- 153
-
4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface RoughnessAigo, T. / Sawamura, M. / Fujimoto, T. / Katsuno, M. / Yashiro, H. / Tsuge, H. / Nakabayashi, M. / Hoshino, T. / Ohtani, N. et al. | 2006
- 159
-
SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter WafersBurk, A. A. / O Loughlin, M. J. / Paisley, M. J. / Powell, A. R. / Brady, M. F. / Leonard, R. T. / McClure, D. A. et al. | 2006
- 163
-
Epitaxial Layers Grown with HCI Addition: A Comparison with the Standard ProcessLa Via, F. / Galvagno, G. / Firrincieli, A. / Roccaforte, F. / Di Franco, S. / Ruggiero, A. / Barbera, M. / Reitano, R. / Musumeci, P. / Calcagno, L. et al. | 2006
- 167
-
Lower-Temperature Epitaxial Growth of 4H-SiC Using CH~3Cl Carbon Gas PrecursorKoshka, Y. / Lin, H. D. / Melnychuk, G. / Wood, C. et al. | 2006
- 171
-
Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH~3Cl Carbon PrecursorLin, H. D. / Wyatt, J. L. / Koshka, Y. et al. | 2006
- 175
-
Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon PrecursorMacMillan, M. F. / Loboda, M. J. / Chung, G. / Carlson, E. / Wan, J. et al. | 2006
- 179
-
SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon PrecursorLeone, S. / Mauceri, M. / Pistone, G. / Abbondanza, G. / Portuese, F. / Abagnale, G. / Valente, G. L. / Crippa, D. / Barbera, M. / Reitano, R. et al. | 2006
- 183
-
Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis SubstratesHassan, J. u. / Hallin, C. / Bergman, J. P. / Janzen, E. et al. | 2006
- 187
-
High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVDMyers, R. L. / Shishkin, Y. / Kordina, O. / Haselbarth, I. / Saddow, S. E. et al. | 2006
- 191
-
Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor DepositionSun, G. S. / Ning, J. / Gong, Q. C. / Gao, X. / Wang, L. / Liu, X. F. / Zeng, Y. P. / Li, J. M. et al. | 2006
- 195
-
Highly Uniform SiC Epitaxy for MESFET FabricationZhang, J. / Mazzola, J. / Hoff, C. / Rivas, C. / Romano, E. / Casady, J. R. B. / Mazzola, M. S. / Casady, J. B. / Matocha, K. S. et al. | 2006
- 199
-
Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical CharacterizationLa Via, F. / Galvagno, G. / Firrincieli, A. / Roccaforte, F. / Di Franco, S. / Ruggiero, A. / Calcagno, L. / Foti, G. / Mauceri, M. / Leone, S. et al. | 2006
- 203
-
High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH~3SiH~3 and C~3H~8 SourcesHatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2006
- 207
-
Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC SubstratesBahng, W. / Cheong, H. J. / Kang, I. H. / Kim, S. C. / Kim, K. H. / Kim, N. K. et al. | 2006
- 211
-
Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching PhenomenaIshida, Y. / Takahashi, T. / Okumura, H. / Arai, K. / Kimura, K. / Nakamura, K. / Yoshida, S. et al. | 2006
- 215
-
Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating PropertySong, H. K. / Moon, J. H. / Yim, J. H. / Kim, H. J. et al. | 2006
- 219
-
Epitaxial Growth of 4H-SiC on 4^o Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVDWada, K. / Kimoto, T. / Nishikawa, K. / Matsunami, H. et al. | 2006
- 223
-
Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor DepositionSaitoh, H. / Manabe, A. / Kimoto, T. et al. | 2006
- 227
-
Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiCSyvajarvi, M. / Yakimova, R. / Yazdi, G. R. / Arjunan, A. / Toupitsyn, E. / Sudarshan, T. S. et al. | 2006
- 231
-
Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) EpitaxyTsuchida, H. / Kamata, I. / Miyanagi, T. / Nakamura, T. / Nakayama, K. / Ishii, R. / Sugawara, Y. et al. | 2006
- 235
-
Ab Initio Studies of the Surface Reaction of Si~2C and SiC~2 with Si on the 4H-SiC (000-1) SurfaceYamaguchi, H. / Sakiyama, Y. / Makino, E. / Onda, S. / Matsumoto, Y. et al. | 2006
- 239
-
Thick Epitaxial Layers on 4^o Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kVHecht, C. / Thomas, B. / Bartsch, W. et al. | 2006
- 239
-
Thick epitaxial layers on 4 deg of angle off-oriented 4H-SiC suited for PiN-diodes with blocking voltages above 6.5 kVHecht, Christian / Thomas, Bernd / Bartsch, Wolfgang et al. | 2006
- 243
-
Growth of Low Basal Plane Dislocation Density SiC Epitaxial LayersZhang, Z. H. / Sudarshan, T. S. et al. | 2006
- 247
-
Experimental Observations of Extended Growth of 4H-SiC Webbed CantileversTrunek, A. J. / Neudeck, P. G. / Spry, D. J. et al. | 2006
- 251
-
SiC Migration Enhanced Embedded Epitaxial (ME^3) Growth TechnologyTakeuchi, Y. / Kataoka, M. / Kimoto, T. / Matsunami, H. / Malhan, R. K. et al. | 2006
- 255
-
CVD Epitaxial Growth of 4H-SiC on Porous SiC SubstratesShishkin, Y. / Ke, Y. / Yan, F. / Devaty, R. P. / Choyke, W. J. / Saddow, S. E. et al. | 2006
- 259
-
Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC MaskLi, C. H. / Bhat, I. B. / Chow, T. P. et al. | 2006
- 263
-
6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1^o-Off Substrate by Closed-Space Sublimation MethodKawai, Y. / Maeda, T. / Nakamura, Y. / Sakurai, Y. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. / Yoshimoto, M. / Furusho, T. et al. | 2006
- 267
-
Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal FurnacePark, C. K. / An, J. H. / Lee, W. J. / Shin, B. C. / Nishino, S. et al. | 2006
- 271
-
Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis alpha-SiC (0001) at Low TemperatureSoueidan, M. / Ferro, G. / Cauwet, F. / Mollet, L. / Jacquier, C. / Younes, G. / Monteil, Y. et al. | 2006
- 275
-
Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based MeltsFerro, G. / Soueidan, M. / Jacquier, C. / Godignon, P. / Stauden, T. / Pezoldt, J. / Lazar, M. / Montserrat, J. / Monteil, Y. et al. | 2006
- 279
-
Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC MesasDu, H. / Skowronski, M. / Neudeck, P. G. / Trunek, A. J. / Spry, D. J. / Powell, J. A. et al. | 2006
- 283
-
Structure Evolution of 3C-SiC on Cubic and Hexagonal SubstratesYakimova, R. / Yazdi, G. R. / Sritirawisarn, N. / Syvajarvi, M. et al. | 2006
- 287
-
Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS MechanismSoueidan, M. / Ferro, G. / Stoemenos, J. / Polychroniadis, E. K. / Chaussende, D. / Soares, F. / Juillaguet, S. / Camassel, J. / Monteil, Y. et al. | 2006
- 291
-
`Switch-Back Epitaxy' as a Novel Technique for Reducing Stacking Faults in 3C-SiCYagi, K. / Kawahara, T. / Hatta, N. / Nagasawa, H. et al. | 2006
- 295
-
Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt ModificationPezoldt, J. / Morales, F. M. / Stauden, T. / Forster, C. / Polychroniadis, E. K. / Stoemenos, J. / Panknin, D. / Skorupa, W. et al. | 2006
- 299
-
Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVDShimizu, H. / Aoyama, Y. et al. | 2006
- 303
-
Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD ReactorGupta, A. / Jacob, C. et al. | 2006
- 307
-
Growth of 3C-SiC on Si Molds for MEMS ApplicationsReyes, M. / Waits, M. / Harvey, S. / Shishkin, Y. / Geil, B. R. / Wolan, J. T. / Saddow, S. E. et al. | 2006
- 311
-
Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor DepositionFu, X. A. / Trevino, J. / Mehregany, M. / Zorman, C. A. et al. | 2006
- 315
-
Multi-Scale Simulation of MBE-Grown SiC/Si NanostructuresSchmidt, A. A. / Trushin, Y. V. / Safonov, K. L. / Kharlamov, V. S. / Kulikov, D. V. / Ambacher, O. / Pezoldt, J. et al. | 2006
- 321
-
Theory of Dislocations in SiC: The Effect of Charge on Kink MigrationEberlein, T. A. G. / Jones, R. / Blumenau, A. T. et al. | 2006
- 327
-
Structure of Carrot Defects in 4H-SiC EpilayersZhang, X. / Ha, S. / Benamara, M. / Skowronski, M. / Sumakeris, J. J. / Ryu, S. / Paisley, M. J. / O Loughlin, M. J. et al. | 2006
- 333
-
Characterization of SiC Crystals by Using Deep UV Excitation Raman SpectroscopyNakashima, S. / Mitani, T. et al. | 2006
- 339
-
Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman SpectroscopyTomita, T. / Matsuo, S. / Okada, T. / Kimoto, T. / Mitani, T. / Nakashima, S. et al. | 2006
- 343
-
Raman Scattering Analyses of Stacking Faults in 3C-SiC CrystalsMitani, T. / Nakashima, S. / Okumura, H. / Nagasawa, H. et al. | 2006
- 347
-
Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiCGlembocki, O. J. / Skowronski, M. / Prokes, S. M. / Gaskill, D. K. / Caldwell, J. D. et al. | 2006
- 351
-
Stacking Faults and 3C Quantum Wells in Hexagonal SiC PolytypesMiao, M. S. / Lambrecht, W. R. L. et al. | 2006
- 355
-
Silicon Carbide: A Playground for 1D-Modulation ElectronicsDeak, P. / Buruzs, A. / Gali, A. / Frauenheim, T. / Choyke, W. J. et al. | 2006
- 359
-
Peierls Barriers and Core Properties of Partial Dislocations in SiCSavini, G. / Heggie, M. I. / Oberg, S. et al. | 2006
- 363
-
Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n DiodesWang, Y. / Chen, L. / Mikhov, M. K. / Samson, G. / Skromme, B. J. et al. | 2006
- 367
-
Recombination Behavior of Stacking Faults in SiC p-i-n DiodesMaximenko, S. I. / Pirouz, P. / Sudarshan, T. S. et al. | 2006
- 371
-
Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free EpilayersZhang, Z. H. / Grekov, A. E. / Sadagopan, P. / Maximenko, S. I. / Sudarshan, T. S. et al. | 2006
- 375
-
Observation of Shrinking and Reformation of Shockley Stacking Faults by PL MappingMiyanagi, T. / Tsuchida, H. / Kamata, I. / Nakamura, T. / Ishii, R. / Nakayama, K. / Sugawara, Y. et al. | 2006
- 379
-
Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core ReconstructionLancin, M. / Regula, G. / Douin, J. / Idrissi, H. / Ottaviani, L. / Pichaud, B. et al. | 2006
- 383
-
Overlapping Shockley/Frank Faults in 4H-SiC PiN DiodesTwigg, M. E. / Stahlbush, R. E. / Losee, P. A. / Li, C. H. / Bhat, I. B. / Chow, T. P. et al. | 2006
- 387
-
Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode StructuresLiu, K. X. / Stahlbush, R. E. / Hobart, K. D. / Sumakeris, J. J. et al. | 2006
- 391
-
Photoemission of 4H-SiC pin Diodes Epitaxied by the Sublimation MethodCamara, N. / Zekentes, K. / Bano, E. / Thuaire, A. / Lebedev, A. A. et al. | 2006
- 395
-
Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted InterfaceGaleckas, A. / Hallen, A. / Schoner, A. / Linnros, J. / Pirouz, P. et al. | 2006
- 399
-
Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial FilmsOkada, T. / Okamoto, K. / Ochi, K. / Higashimine, K. / Kimoto, T. et al. | 2006
- 403
-
Structure of "Star" Defect in 4H-SiC Substrates and EpilayersLee, J. W. / Skowronski, M. et al. | 2006
- 407
-
Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single CrystalYamaguchi, S. / Nakamura, D. / Gunjishima, I. / Hirose, Y. et al. | 2006
- 411
-
Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-EpilayersVetter, W. M. / Tsuchida, H. / Kamata, I. / Dudley, M. et al. | 2006
- 415
-
Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC EpilayersKamata, I. / Tsuchida, H. / Miyanagi, T. / Nakamura, T. et al. | 2006
- 419
-
Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?Zhang, Z. H. / Shrivastava, A. / Sudarshan, T. S. et al. | 2006
- 423
-
3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current MethodYanagisawa, Y. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2006
- 427
-
Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDsSoloviev, S. I. / Sandvik, P. / Arthur, S. D. / Matocha, K. S. / Maximenko, S. I. / Sudarshan, T. S. et al. | 2006
- 431
-
Structural Defects and Critical Electric Field in 3C-SiCCapano, M. A. / Smith, A. R. / Kim, B. C. / Kvam, E. P. / Tsoi, S. / Ramdas, A. K. / Cooper, J. A. et al. | 2006
- 435
-
Giant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force MicroscopyPernot, E. / Hartwig, J. / Pons, M. / Madar, R. et al. | 2006
- 439
-
Open Core Dislocations and Surface Energy of SiCMaximenko, S. I. / Pirouz, P. / Sudarshan, T. S. et al. | 2006
- 443
-
Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC SubstratesEmorhokpor, E. / Carlson, E. / Wan, J. / Weber, A. / Basceri, C. / Jenny, J. R. / Sandhu, R. / Oliver, J. D. / Burkeen, F. / Somanchi, A. et al. | 2006
- 447
-
A New Method of Mapping and Counting Micropipes in SiC WafersWan, J. W. / Park, S. H. / Chung, G. / Carlson, E. / Loboda, M. J. et al. | 2006
- 451
-
Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray DiffractometryDong, J. / Wang, L. / Hu, X. B. / Li, X. X. / Li, J. / Jiang, S. Z. / Chen, X. F. / Xu, X. G. / Jiang, M. H. et al. | 2006
- 455
-
Optical Studies of Deep Centers in Semi-Insulating SiCMagnusson, B. / Aavikko, R. / Saarinen, K. / Son, N. T. / Janzen, E. et al. | 2006
- 461
-
Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical TechniquesThuaire, A. / Henry, A. / Magnusson, B. / Bergman, J. P. / Chen, W. M. / Janzen, E. / Mermoux, M. / Bano, E. et al. | 2006
- 465
-
High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical InsightMattausch, A. / Bockstedte, M. / Pankratov, O. / Steeds, J. W. / Furkert, S. A. / Hayes, J. M. / Sullivan, W. / Wright, N. G. et al. | 2006
- 469
-
Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC CrystalsNeimontas, K. / Kadys, A. / Aleksiejunas, R. / Jarasiunas, K. / Chung, G. / Sanchez, E. K. / Loboda, M. J. et al. | 2006
- 473
-
Origin of the Up-Conversion Process in 4H SiCSteeds, J. W. / Furkert, S. A. / Sullivan, W. / Wagner, G. et al. | 2006
- 477
-
A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiCSullivan, W. / Steeds, J. W. / von Bardeleben, H. J. / Cantin, J. L. et al. | 2006
- 481
-
Investigation of the Displacement Threshold of Si in 4H SiCSullivan, W. / Steeds, J. W. et al. | 2006
- 485
-
Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient SpectroscopyAlfieri, G. / Grossner, U. / Monakhov, E. V. / Svensson, B. G. / Steeds, J. W. / Sullivan, W. et al. | 2006
- 489
-
Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiCStorasta, L. / Kamata, I. / Nakamura, T. / Tsuchida, H. et al. | 2006
- 493
-
Deep Traps and Charge Carrier Lifetimes in 4H-SiC EpilayersHuh, S. W. / Sumakeris, J. J. / Polyakov, A. Y. / Skowronski, M. / Klein, P. B. / Shanabrook, B. V. / O Loughlin, M. J. et al. | 2006
- 497
-
Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor DepositionHuh, S. W. / Polyakov, A. Y. / Chung, H. J. / Nigam, S. / Skowronski, M. / Glaser, E. R. / Carlos, W. E. / Fanton, M. A. / Smirnov, N. B. et al. | 2006
- 501
-
Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient SpectroscopyDanno, K. / Kimoto, T. et al. | 2006
- 505
-
Deep Level near E~C - 0.55 eV in Undoped 4H-SiC SubstratesMitchel, W. C. / Mitchell, W. D. / Smith, S. R. / Landis, G. / Evwaraye, A. O. / Fang, Z. Q. / Look, D. C. / Sizelove, J. R. et al. | 2006
- 509
-
Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current SpectroscopyFang, Z. Q. / Claflin, B. / Look, D. C. / Polenta, L. / Chen, J. / Anderson, T. / Mitchel, W. C. et al. | 2006
- 513
-
Quenching Photoconductivity and Photoelectric Memory in 6H-SiCDuisenbaev, M. et al. | 2006
- 517
-
Deep Level Point Defects in Semi-Insulating SiCZvanut, M. E. / Lee, W. W. / Wang, H. / Mitchel, W. C. / Mitchell, W. D. et al. | 2006
- 523
-
Divacancy and Its Identification: TheoryGali, A. / Bockstedte, M. / Son, N. T. / Umeda, T. / Isoya, J. / Janzen, E. et al. | 2006
- 527
-
Divacancy Model for P6/P7 Centers in 4H- and 6H-SiCSon, N. T. / Umeda, T. / Isoya, J. / Gali, A. / Bockstedte, M. / Magnusson, B. / Ellison, A. / Morishita, N. / Ohshima, T. / Itoh, H. et al. | 2006
- 531
-
Thermal Evolution of Defects in Semi-Insulating 4H SiCCarlos, W. E. / Glaser, E. R. / Garces, N. Y. / Shanabrook, B. V. / Fanton, M. A. et al. | 2006
- 535
-
Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR StudyIlyin, I. V. / Muzafarova, M. V. / Mokhov, E. N. / Sankin, V. I. / Baranov, P. G. / Orlinskii, S. B. / Schmidt, J. et al. | 2006
- 539
-
Signature of the Negative Carbon Vacancy-Antisite ComplexBockstedte, M. / Gali, A. / Umeda, T. / Son, N. T. / Isoya, J. / Janzen, E. et al. | 2006
- 543
-
Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiCUmeda, T. / Son, N. T. / Isoya, J. / Morishita, N. / Ohshima, T. / Itoh, H. / Janzen, E. et al. | 2006
- 547
-
Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC PolytypesGarces, N. Y. / Carlos, W. E. / Glaser, E. R. / Huh, S. W. / Chung, H. J. / Nigam, S. / Polyakov, A. Y. / Skowronski, M. et al. | 2006
- 551
-
Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiCPinheiro, M. V. B. / Rauls, E. / Gerstmann, U. / Greulich-Weber, S. / Spaeth, J. M. / Overhof, H. et al. | 2006
- 555
-
Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic ResonanceMuzafarova, M. V. / Ilyin, I. V. / Mokhov, E. N. / Sankin, V. I. / Baranov, P. G. et al. | 2006
- 559
-
Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiCKalabukhova, E. N. / Lukin, S. N. / Savchenko, D. V. / Mitchel, W. C. / Greulich-Weber, S. / Rauls, E. / Gerstmann, U. et al. | 2006
- 563
-
Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiCKalabukhova, E. N. / Lukin, S. N. / Savchenko, D. V. / Sitnikov, A. A. / Mitchel, W. C. / Smith, S. R. / Greulich-Weber, S. et al. | 2006
- 567
-
Identification of Deep Level Defects in SiC Bipolar Junction TransistorsLenahan, P. M. / Pfeiffenberger, N. T. / Pribicko, T. G. / Lelis, A. J. et al. | 2006
- 571
-
Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic ResonanceKerbiriou, X. / Barthe, M. F. / Esnouf, S. / Desgardin, P. / Blondiaux, G. / Petite, G. et al. | 2006
- 575
-
Clustering of Vacancies in Semi-Insulating SiC Observed with Positron SpectroscopyAavikko, R. / Saarinen, K. / Magnusson, B. / Janzen, E. et al. | 2006
- 579
-
Electronic Raman Studies of Shallow Donors in Silicon CarbidePusche, R. / Hundhausen, M. / Ley, L. / Semmelroth, K. / Pensl, G. / Desperrier, P. / Wellmann, P. J. / Haller, E. E. / Ager, J. W. / Starke, U. et al. | 2006
- 585
-
Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiCYan, F. / Devaty, R. P. / Choyke, W. J. / Gali, A. / Bhat, I. B. / Larkin, D. J. et al. | 2006
- 589
-
Photoluminescence of Phosphorus Doped SiCHenry, A. / Janzen, E. et al. | 2006
- 593
-
Shallow P Donors in 3C-, 4H- and 6H-SiCIsoya, J. / Katagiri, M. / Umeda, T. / Son, N. T. / Henry, A. / Gali, A. / Morishita, N. / Ohshima, T. / Itoh, H. / Janzen, E. et al. | 2006
- 597
-
Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping ConcentrationRao, S. / Chow, T. P. / Bhat, I. B. et al. | 2006
- 601
-
Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiCIvanov, I. G. / Henry, A. / Janzen, E. et al. | 2006
- 605
-
A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC LayersHornos, T. / Gali, A. / Devaty, R. P. / Choyke, W. J. et al. | 2006
- 609
-
New Aspects in n-type Doping of SiC with PhosphorusRauls, E. / Gerstmann, U. / Greulich-Weber, S. / Semmelroth, K. / Pensl, G. / Haller, E. E. et al. | 2006
- 613
-
Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC SubstratesGlaser, E. R. / Shanabrook, B. V. / Carlos, W. E. / Chung, H. J. / Nigam, S. / Polyakov, A. Y. / Skowronski, M. et al. | 2006
- 617
-
Evaluating and Improving SIMS Method for Measuring Nitrogen in SiCSmith, H. E. / Eyink, K. G. / Mitchel, W. C. / Wood, M. C. / Fanton, M. A. et al. | 2006
- 621
-
Kinetic Mechanisms for the Deactivation of Nitrogen in SiCBockstedte, M. / Mattausch, A. / Pankratov, O. et al. | 2006
- 625
-
Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor DepositionChung, H. J. / Huh, S. W. / Polyakov, A. Y. / Nigam, N. / Li, Q. / Grim, J. / Skowronski, M. / Glaser, E. R. / Carlos, W. E. / Freitas, J. A. et al. | 2006
- 629
-
Accurate CsM^+ SIMS Aluminum Dopant Profiling in SiCSmith, H. E. / Tsao, B. H. / Scofield, J. D. et al. | 2006
- 633
-
Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped alpha-SiC Substrates Grown by the M-PVT MethodContreras, S. / Zielinski, M. / Konczewicz, L. / Blanc, C. / Juillaguet, S. / Muller, R. / Kunecke, U. / Wellmann, P. J. / Camassel, J. et al. | 2006
- 637
-
In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC SubstratesLinnarsson, M. K. / Janson, M. S. / Forsberg, U. / Janzen, E. et al. | 2006
- 641
-
Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different PolytypesMiao, M. S. / Lambrecht, W. R. L. et al. | 2006
- 647
-
The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiCLee, W. W. / Zvanut, M. E. et al. | 2006
- 651
-
Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiCKalabukhova, E. N. / Savchenko, D. V. / Greulich-Weber, S. / Bulanyi, M. F. / Omelchenko, S. A. / Khmelenko, O. V. / Gorban, A. A. / Mokhov, E. N. et al. | 2006
- 655
-
Co-Doping of Er-Doped SiC with Oxygen - A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?Gerstmann, U. / Rauls, E. / Sanna, S. / Frauenheim, T. / Overhof, H. et al. | 2006
- 659
-
Europium Induced Deep Levels in Hexagonal Silicon CarbidePasold, G. / Albrecht, F. / Hulsen, C. / Sielemann, R. / Witthuhn, W. et al. | 2006
- 663
-
Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb^3^+, Dy^3^+ and Eu^3^+) a-SiC Thin Films Prepared by rf Magnetron SputteringWeingartner, R. / Erlenbach, O. / de Zela, F. / Winnacker, A. / Brauer, I. / Strunk, H. P. et al. | 2006
- 667
-
Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface MetallizationSoukiassian, P. / Silly, M. G. / Radtke, C. / Enriquez, H. / D angelo, M. / Derycke, V. / Aristov, V. Y. / Amy, F. / Chabal, Y. J. / Moras, P. et al. | 2006
- 673
-
Temperature Induced Phase Transformation on the 4H-SiC(11-20) SurfaceLee, W. Y. / Soubatch, S. / Starke, U. et al. | 2006
- 677
-
SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)Starke, U. / Lee, W. Y. / Coletti, C. / Saddow, S. E. / Devaty, R. P. / Choyke, W. J. et al. | 2006
- 681
-
Experimental Study of the Formation and Oxidation of the Sm/4H-SiC Surface AlloyKildemo, M. / Grossner, U. / Juel, M. / Samuelsen, B. / Svensson, B. G. / Raaen, S. et al. | 2006
- 685
-
Low Energy Ion Modification of 3C-SiC SurfacesForster, C. / Kosiba, R. / Ecke, G. / Cimalla, V. / Ambacher, O. / Pezoldt, J. et al. | 2006
- 689
-
Phonons in SiC from INS, IXS, and Ab-Initio CalculationsStrauch, D. / Dorner, B. / Ivanov, A. A. / Krisch, M. / Serrano, J. / Bosak, A. / Choyke, W. J. / Stojetz, B. / Malorny, M. et al. | 2006
- 695
-
Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor DepositionFeng, Z. C. / Huang, C. W. / Chang, W. Y. / Zhao, J. / Tin, C. C. / Lu, W. / Collins, W. E. et al. | 2006
- 699
-
Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single CrystalsNakabayashi, M. / Fujimoto, T. / Katsuno, M. / Ohtani, N. et al. | 2006
- 703
-
Thermal Lens Technique for the Determination of SiC Thermo-Optical PropertiesAnjos, V. / Bell, M. J. V. / de Vasconcelos, E. A. / da Silva, E. F. / Andrade, A. A. / Franco, R. W. A. / Castro, M. P. P. / Esquef, I. A. / Faria, R. T. et al. | 2006
- 707
-
Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiCSankin, V. I. / Yakimova, R. et al. | 2006
- 711
-
Characterization of SiC Wafers by Photoluminescence MappingTajima, M. / Higashi, E. / Hayashi, T. / Kinoshita, H. / Shiomi, H. et al. | 2006
- 717
-
Correlation between Room Temperature Photoluminescence and Resistivity in Semi-Insulating Silicon CarbideChanda, S. K. / Koshka, Y. / Yoganathan, M. et al. | 2006
- 721
-
Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence ImagingPark, S. H. / Loboda, M. J. / Spaulding, M. J. et al. | 2006
- 725
-
SiC Substrate Doping Profiles Using Commercial Optical ScannersCaldwell, J. D. / Glembocki, O. J. / Hansen, D. M. / Chung, G. / Hobart, K. D. / Kub, F. J. et al. | 2006
- 729
-
Characterization of SiC Substrates Using X-Ray Rocking Curve MappingYoganathan, M. / Emorhokpor, E. / Kerr, T. / Gupta, A. / Tanner, C. D. / Zwieback, I. et al. | 2006
- 733
-
Microwave Dielectric Loss Characterization of Silicon Carbide WafersBogart, T. / Everson, B. / Gamble, R. D. / Oslosky, E. / Synder, D. W. / Furman, E. / Perini, S. / Lanagan, M. et al. | 2006
- 739
-
Columnar Pore Growth in n-Type 6H SiCKe, Y. / Yan, F. / Devaty, R. P. / Choyke, W. J. et al. | 2006
- 743
-
A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiCKe, Y. / Moisson, C. / Gaan, S. / Feenstra, R. M. / Devaty, R. P. / Choyke, W. J. et al. | 2006
- 747
-
Brillouin Spectra of Porous p-Type 6H-SiCAndrews, G. T. / Young, C. / Polomska, A. / Clouter, M. J. / Ke, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2006
- 751
-
Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other ApplicationsRosenbloom, A. J. / Nie, S. / Ke, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2006
- 755
-
Novel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVDChen, L. / Fu, X. A. / Zorman, C. A. / Mehregany, M. et al. | 2006
- 759
-
Sol-Gel Silicon Carbide for Photonic ApplicationsFriedel, B. / Greulich-Weber, S. et al. | 2006
- 763
-
Formation, Morphology and Optical Properties of SiC NanopowderNychyporuk, T. / Marty, O. / Bluet, J. M. / Lysenko, V. / Perrin, R. / Guillot, G. / Barbier, D. et al. | 2006
- 767
-
A Simple Method to Synthesize Nano-Sized 3C-SiC Powder Using Hexamethyldisilane in a CVD ReactorGupta, A. / Jacob, C. et al. | 2006
- 771
-
Fabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect TransistorSeong, H. K. / Lee, S. Y. / Choi, H. J. / Kim, T. H. / Cho, N. K. / Nahm, K. S. / Lee, S. K. et al. | 2006
- 775
-
Thermodynamic Analysis of Synthetic Potentialities of the nSiC + SiO~2 Starting System: SiC Gas-Phase Transport via Si(g) and CO(g)Sevastyanov, V. G. / Pavelko, R. G. / Ezhov, Y. S. / Kuznetsov, N. T. et al. | 2006
- 781
-
Ion Implantation Processing and Related Effects in SiCSvensson, B. G. / Hallen, A. / Wong-Leung, J. / Janson, M. S. / Linnarsson, M. K. / Kuznetsov, A. Y. / Alfieri, G. / Grossner, U. / Monakhov, E. V. / K-Nielsen, H. et al. | 2006
- 787
-
Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC DevicesBuzzo, M. / Ciappa, M. / Treu, M. / Fichtner, W. et al. | 2006
- 791
-
Annealing Behavior of N^+-Implantation-Induced Defects in SiC at Low TemperaturesSatoh, M. / Suzuki, T. / Miyagawa, S. et al. | 2006
- 795
-
Impact of Annealing Temperature Ramps on the Electrical Activation of N^+ and P^+ Co-Implanted SiC LayersBlanque, S. / Perez, R. / Mestres, N. / Contreras, S. / Camassel, J. / Godignon, P. et al. | 2006
- 799
-
Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)Satoh, M. / Suzuki, T. et al. | 2006
- 803
-
Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA EquipmentKinoshita, A. / Senzaki, J. / Katou, M. / Harada, S. / Okamato, M. / Nishizawa, S. / Fukuda, K. / Morigasa, F. / Endou, T. / Isii, T. et al. | 2006
- 807
-
Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation AnnealingShibagaki, M. / Satoh, M. / Kurematsu, Y. / Numajiri, K. / Watanabe, F. / Haga, S. / Miura, K. / Suzuki, T. / Miyagawa, S. et al. | 2006
- 811
-
Correlation between Current Transport and Defects in n^+/p 6H-SiC DiodesCanino, M. / Castaldini, A. / Cavallini, A. / Moscatelli, F. / Nipoti, R. / Poggi, A. et al. | 2006
- 815
-
Current Analysis of Ion Implanted p^+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar AmbientNipoti, R. / Bergamini, F. / Moscatelli, F. / Poggi, A. / Canino, M. / Bertuccio, G. et al. | 2006
- 819
-
Ion Implanted p^+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD ReactorBergamini, F. / Rao, S. P. / Poggi, A. / Tamarri, F. / Saddow, S. E. / Nipoti, R. et al. | 2006
- 823
-
Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN DiodesTian, Z. / Quick, N. R. / Kar, A. et al. | 2006
- 827
-
Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modelling of Resistivity MeasurementsRambach, M. / Frey, L. / Bauer, A. J. / Ryssel, H. et al. | 2006
- 827
-
Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurementsRambach, M. / Frey, L. / Bauer, A.J. / Ryssel, H. et al. | 2006
- 831
-
Variations in the Effects of Implanting Al at Different Concentrations into SiCJones, K. A. / Zheleva, T. S. / Shah, P. B. / Derenge, M. A. / Freitas, J. A. / Gerardi, G. J. / Vispute, R. D. / Hullavard, S. / Dar, S. et al. | 2006
- 835
-
Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature AnnealingKinoshita, A. / Katou, M. / Kawasaki, M. / Kojima, K. / Fukuda, K. / Arai, K. / Morigasa, F. / Endou, T. / Isii, T. / Yashima, T. et al. | 2006
- 839
-
Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVDRao, S. P. / Bergamini, F. / Nipoti, R. / Hoff, A. M. / Oborina, E. / Saddow, S. E. et al. | 2006
- 843
-
Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing ProcessesNegoro, Y. / Kimoto, T. / Matsunami, H. / Pensl, G. et al. | 2006
- 847
-
Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by LuminsescenceFreitas, J. A. / Jones, K. A. / Derenge, M. A. / Vispute, R. D. / Hullavard, S. et al. | 2006
- 847
-
Observation of thermal-annealing evolution of defects in ionimplanted 4H-SiC by luminescenceFreitas, J.A. / Jones, K.A. / Derenge, M.A. / Vispute, R.D. / Hullavard, S. et al. | 2006
- 851
-
High Dose High Temperature Ion Implantation of Ge into 4H-SiCKups, T. / Weih, P. / Voelskow, M. / Skorupa, W. / Pezoldt, J. et al. | 2006
- 855
-
Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing SequencesMalouf, G. / Poust, B. / Hayashi, S. / Yoshizawa, G. / Goorsky, M. S. et al. | 2006
- 859
-
An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal ContactsErvin, M. H. / Jones, K. A. / Lee, U. / Das, T. / Wood, M. C. et al. | 2006
- 863
-
Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiCLu, W. / Michel, J. A. / Lukehart, C. M. / Collins, W. E. / Mitchel, W. C. et al. | 2006
- 867
-
Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite PrecipitationMaeyama, Y. / Nishikawa, K. / Fukuda, Y. / Shimizu, M. / Sato, M. / Ono, J. / Iwakuro, H. et al. | 2006
- 871
-
Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature AnnealingVassilevski, K. V. / Nikitina, I. P. / Horsfall, A. B. / Wright, N. G. / Johnson, C. M. / Malhan, R. K. / Yamamoto, T. et al. | 2006
- 875
-
Die Bonding Issues on Silicon Carbide DiodesLee, S. Y. / Lee, J. S. / Kim, T. H. / Choi, S. Y. / Kim, H. J. / Bahng, W. / Kim, N. K. / Lee, S. K. et al. | 2006
- 879
-
Composite Ohmic Contacts to SiCAdedeji, A. V. / Ahyi, A. C. / Williams, J. R. / Bozack, M. J. / Mohney, S. E. / Liu, B. / Scofield, J. D. et al. | 2006
- 883
-
Tantalum-Ruthenium Diffusion Barriers for Contacts to SiCWang, S. H. / Arnold, O. / Eichfeld, C. M. / Mohney, S. E. / Adedeji, A. V. / Williams, J. R. et al. | 2006
- 887
-
Investigation of TiW Contacts to 4H-SiC Bipolar Junction DevicesLee, H. S. / Domeij, M. / Zetterling, C. M. / Ostling, M. / Lu, J. et al. | 2006
- 891
-
Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron SpectroscopiesGao, M. / Tumakha, S. P. / Onishi, T. / Tsukimoto, S. / Murakami, M. / Brillson, L. J. et al. | 2006
- 895
-
Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiCCrofton, J. / Williams, J. R. / Adedeji, A. V. / Scofield, J. D. / Dhar, S. / Feldman, L. C. / Bozack, M. J. et al. | 2006
- 899
-
Ohmic Contacts on p-Type SiC Using Al/C FilmsLu, W. / Landis, G. R. / Collins, W. E. / Mitchel, W. C. et al. | 2006
- 903
-
Ti/AlNi/W and Ti/Ni~2Si/W Ohmic Contacts to P-Type SiCTsao, B. H. / Lawson, J. / Scofield, J. D. et al. | 2006
- 907
-
Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal DiodesTumakha, S. P. / Porter, L. M. / Ewing, D. J. / Wahab, Q. / Ma, X. Y. / Sudarshan, T. S. / Brillson, L. J. et al. | 2006
- 911
-
A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiCEwing, D. J. / Wahab, Q. / Tumakha, S. P. / Brillson, L. J. / Ma, X. Y. / Sudarshan, T. S. / Porter, L. M. et al. | 2006
- 915
-
Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite EncapsulationWang, Y. / Mikhov, M. K. / Skromme, B. J. et al. | 2006
- 919
-
Diffusion Welding Techniques for Power SiC Schottky PackagingKorolkov, O. / Rang, T. / Syrkin, A. / Dmitriev, V. et al. | 2006
- 923
-
Evaluation of Schottky Barrier Height of Al, Ti, Au, and Ni Contacts to 3C-SiCSatoh, M. / Matsuo, H. et al. | 2006
- 927
-
Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier DiodesNakamura, T. / Miyanagi, T. / Kamata, I. / Tsuchida, H. et al. | 2006
- 931
-
High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche BreakdownVassilevski, K. V. / Nikitina, I. P. / Bhatnagar, P. / Horsfall, A. B. / Wright, N. G. / O Neill, A. G. / Uren, M. J. / Hilton, K. / Munday, A. / Hydes, A. et al. | 2006
- 935
-
Si/SiO~2 and SiC/SiO~2 Interfaces for MOSFETs - Challenges and AdvancesPantelides, S. T. / Wang, S. / Franceschetti, A. / Buczko, R. / Di Ventra, M. / Rashkeev, S. N. / Tsetseris, L. / Evans, M. H. / Batyrev, I. G. / Feldman, L. C. et al. | 2006
- 949
-
Nitrogen and Hydrogen Induced Trap Passivation at the SiO~2/4H-SiC InterfaceDhar, S. / Wang, S. R. / Ahyi, A. C. / Isaacs-Smith, T. / Pantelides, S. T. / Williams, J. R. / Feldman, L. C. et al. | 2006
- 955
-
Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO DielectricsTanimoto, S. et al. | 2006
- 961
-
High Channel Mobility 4H-SiC MOSFETsSveinbjornsson, E. O. / Gudjonsson, G. / Allerstam, F. / Olafsson, H. O. / Nilsson, P. A. / Zirath, H. / Rodle, T. / Jos, R. et al. | 2006
- 967
-
Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300^oC NO AnnealDas, M. K. / Hull, B. A. / Krishnaswami, S. / Husna, F. / Haney, S. / Lelis, A. J. / Scozzie, C. J. / Scofield, J. D. et al. | 2006
- 971
-
Characterization of 4H-SiC MOSFETs with NO-Annealed CVD OxideYano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. et al. | 2006
- 975
-
Investigation of SiO~2-SiC Interface by High-Resolution Transmission Electron MicroscopeDimitrijev, S. / Han, J. / Zou, J. et al. | 2006
- 979
-
Interfacial Properties of SiO~2 Grown on 4H-SiC: Comparison between N~2O and Wet O~2 Oxidation AmbientPoggi, A. / Moscatelli, F. / Scorzoni, A. / Marino, G. / Nipoti, R. / Sanmartin, M. et al. | 2006
- 983
-
Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiCMatocha, K. S. / Cowen, C. S. / Beaupre, R. / Tucker, J. B. et al. | 2006
- 987
-
Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N~2O AnnealingKimoto, T. / Kawano, H. / Noborio, M. / Suda, J. / Matsunami, H. et al. | 2006
- 991
-
Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO~2-InterfacesCiobanu, F. / Frank, T. / Pensl, G. / Afanas ev, V. / Shamuilia, S. / Schoner, A. / Kimoto, T. et al. | 2006
- 995
-
Process-Dependent Charges and Traps in Dielectrics on SiCKrishnan, B. / Das, H. / Koshka, Y. / Sankin, I. / Martin, P. A. / Mazzola, M. S. et al. | 2006
- 999
-
Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiCSenzaki, J. / Shimozato, A. / Fukuda, K. et al. | 2006
- 1003
-
Off-Angle Dependence of Characteristics of 4H-SiC-Oxide InterfacesHijikata, Y. / Yaguchi, H. / Yoshida, S. / Takata, Y. / Kobayashi, K. / Nohira, H. / Hattori, T. et al. | 2006
- 1007
-
On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor DevicesHabersat, D. B. / Lelis, A. J. / Lopez, G. / McGarrity, J. M. / McLean, F. B. et al. | 2006
- 1011
-
Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent RecombinationDautrich, M. S. / Lenahan, P. M. / Lelis, A. J. et al. | 2006
- 1015
-
Forming Gas Annealing of the Carbon P~b~C Center in Oxidized Porous 3C- and 4H-SiC: An EPR StudyCantin, J. L. / von Bardeleben, H. J. et al. | 2006
- 1019
-
Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO~2 Interface State Density Distribution?Thill, C. / Knaup, J. / Deak, P. / Frauenheim, T. / Choyke, W. J. et al. | 2006
- 1023
-
Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC SurfacesNie, S. / Feenstra, R. M. et al. | 2006
- 1027
-
Ellipsometric and XPS Studies of 4H-SiC/SiO~2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC SurfacesGuy, O. J. / Chen, L. / Pope, G. / Teng, K. S. / Maffeis, T. / Wilks, S. P. / Mawby, P. A. / Jenkins, T. / Brieva, A. / Hayton, D. J. et al. | 2006
- 1031
-
Real Time Observation of SiC Oxidation Using an In Situ EllipsometerKakubari, K. / Kuboki, R. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. et al. | 2006
- 1035
-
Fast Non-Contact Dielectric Characterization for SiC MOS ProcessingHoff, A. M. / Oborina, E. et al. | 2006
- 1039
-
High Temperature Reliability of SiC n-MOS Devices up to 630 ^oCGhosh, R. N. / Loloee, R. / Isaacs-Smith, T. / Williams, J. R. et al. | 2006
- 1043
-
High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1^o) Off-AngleFukuda, K. / Kato, M. / Harada, S. / Kojima, K. et al. | 2006
- 1047
-
PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) FacesPerez-Tomas, A. / Godignon, P. / Camassel, J. / Mestres, N. / Souliere, V. et al. | 2006
- 1051
-
Process Optimisation for <11-20> 4H-SiC MOSFET ApplicationsBlanc, C. / Tournier, D. / Godignon, P. / Brink, D. J. / Souliere, V. / Camassel, J. et al. | 2006
- 1055
-
Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO~2Pennington, G. / Potbhare, S. / Goldsman, N. / Habersat, D. B. / Lelis, A. J. et al. | 2006
- 1059
-
Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta~2Si/4H-SiC High-k MOSFETs Measured in Strong InversionPerez-Tomas, A. / Vellvehi, M. / Mestres, N. / Millan, J. / Vennegues, P. / Stoemenos, J. et al. | 2006
- 1063
-
Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETsAhyi, A. C. / Wang, S. R. / Williams, J. R. et al. | 2006
- 1067
-
High Temperature Annealing Study of Al~2O~3 Deposited by ALCVD on n-Type 4H-SiCAvice, M. / Grossner, U. / Nilsen, O. / Christensen, J. S. / Fjellvag, H. / Svensson, B. G. et al. | 2006
- 1071
-
Experimental and First-Principles Studies of the Band Alignment at the HfO~2/4H-SiC (0001) InterfaceTanner, C. M. / Choi, J. W. / Chang, J. P. et al. | 2006
- 1075
-
Structural and Morphological Properties of Ultrathin HfO~2 Dielectrics on 4H-SiC (0001)Tanner, C. M. / Lu, J. / Blom, H. O. / Chang, J. P. et al. | 2006
- 1079
-
Low Temperature Deposition of HfO~2 Gate Insulator on SiC by Metalorganic Chemical Vapor DepositionHino, S. / Hatayama, T. / Miura, N. / Ozeki, T. / Tokumitsu, E. et al. | 2006
- 1083
-
Electrical Properties of the La~2O~3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)~3 and H~2OMoon, J. H. / Eom, D. I. / No, S. Y. / Song, H. K. / Yim, J. H. / Na, H. J. / Lee, J. B. / Kim, H. J. et al. | 2006
- 1087
-
Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k DielectricsBrezeanu, M. / Badila, M. / Brezeanu, G. / Udrea, F. / Boianceanu, C. / Amaratunga, G. A. J. / Zekentes, K. et al. | 2006
- 1091
-
Preparation and Evaluation of Damage Free Surfaces on Silicon CarbideEverson, W. J. / Heydemann, V. D. / Gamble, R. D. / Snyder, D. W. / Goda, G. / Skowronski, M. / Grim, J. / Berkman, E. / Redwing, J. M. / Acord, J. D. et al. | 2006
- 1095
-
Selectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon CarbideGrim, J. R. / Skowronski, M. / Everson, W. J. / Heydemann, V. D. et al. | 2006
- 1099
-
Augmented CMP Techniques for Silicon CarbideKuo, P. / Currier, I. et al. | 2006
- 1103
-
Characterization of Low Stress, Undoped LPCVD Polycrystalline SiC Films for MEMS ApplicationsDunning, J. / Fu, X. A. / Mehregany, M. / Zorman, C. A. et al. | 2006
- 1107
-
Mechanical Testing of Flexible Silicon Carbide Interconnect RibbonsPanday, R. / Fu, X. A. / Rajgopal, S. / Lisby, T. / Nikles, S. A. / Najafi, K. / Mehregany, M. et al. | 2006
- 1111
-
Micromachining of Novel SiC on Si Structures for Device and Sensor ApplicationsFoerster, C. / Cimalla, V. / Stubenrauch, M. / Rockstuhl, C. / Brueckner, K. / Hein, M. / Pezoldt, J. / Ambacher, O. et al. | 2006
- 1115
-
Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate ProcessEvans, L. J. / Beheim, G. M. et al. | 2006
- 1119
-
Via Hole Formation in Silicon Carbide by Laser MicromachiningZekentes, K. / Zergioti, I. / Klini, A. / Constantinidis, G. et al. | 2006
- 1123
-
Development of a Microstrip SiC MMIC ProcessSudow, M. / Andersson, K. / Billstrom, N. / Nilsson, J. / Nilsson, P. A. / Rorsman, N. / Stahl, J. / Zirath, H. et al. | 2006
- 1129
-
Energy Efficiency: The Commercial Pull for SiC DevicesPalmour, J. W. et al. | 2006
- 1135
-
SiC Device Applications: Identifying and Developing Commercial ApplicationsHancock, J. W. et al. | 2006
- 1141
-
Developments in Hybrid Si - SiC Power ModulesSkibinski, G. / Braun, D. / Kirschnik, D. / Lukaszewski, R. et al. | 2006
- 1147
-
Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier DiodesStephani, D. / Schoerner, R. / Peters, D. / Friedrichs, P. et al. | 2006
- 1151
-
Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical ModelingIrace, A. / d Alessandro, V. / Breglio, G. / Spirito, P. / Bricconi, A. / Carta, R. / Raffo, D. / Merlin, L. et al. | 2006
- 1155
-
A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC ApplicationsTreu, M. / Rupp, R. / Tai, C. S. / Blaschitz, P. / Hilsenbeck, J. / Brunner, H. / Peters, D. / Elpelt, R. / Reimann, T. et al. | 2006
- 1159
-
Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS RectifiersZhu, L. / Chow, T. P. / Jones, K. A. / Scozzie, C. J. / Agarwal, A. K. et al. | 2006
- 1163
-
4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT ModulesTournier, D. / Waind, P. / Godignon, P. / Coulbeck, L. / Millan, J. / Bassett, R. et al. | 2006
- 1167
-
Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky DiodesRaineri, V. / Roccaforte, F. / Libertino, S. / Ruggiero, A. / Massimino, V. / Calcagno, L. et al. | 2006
- 1171
-
Design and Analysis of a Dual-Step Field-Plate Terminated 4H-SiC Schottky Diode Using SiO~2/High-K Dielectric StackKumta, A. / Rusli, E. / Tin, C. C. et al. | 2006
- 1175
-
Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical PropertiesOta, C. / Nishio, J. / Hatakeyama, T. / Shinohe, T. / Kojima, K. / Nishizawa, S. / Ohashi, H. et al. | 2006
- 1179
-
Optimization of a SiC Super-SBD Based on Scaling Properties of Power DevicesHatakeyama, T. / Ota, C. / Nishio, J. / Shinohe, T. et al. | 2006
- 1183
-
Fast Switching (41 MHz), 2.5 mOmegaΩcm^2, High Current 4H-SiC VJFETs for High Power and High Temperature ApplicationsCheng, L. / Casady, J. R. B. / Mazzola, M. S. / Bondarenko, V. / Kelley, R. L. / Sankin, I. / Merrett, J. N. / Casady, J. B. et al. | 2006
- 1187
-
10 kV, 87 mOmegacm^2 Normally-Off 4H-SiC Vertical Junction Field-Effect TransistorsLi, Y. Z. / Alexandrov, P. / Zhang, J. H. / Li, L. X. / Zhao, J. H. et al. | 2006
- 1191
-
Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETsZhao, J. H. / Alexandrov, P. / Li, Y. Z. / Li, L. X. / Sheng, K. / Lebron-Velilla, R. et al. | 2006
- 1195
-
Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFETBhatnagar, P. / Horsfall, A. B. / Wright, N. G. / Johnson, C. M. / Vassilevski, K. V. / O Neill, A. G. et al. | 2006
- 1199
-
Design Considerations of a New 4H-SiC Enhancement-Mode Lateral Channel Vertical JFET for Low-Loss Switching OperationChoi, Y. C. / Cha, H. Y. / Eastman, L. F. / Spencer, M. G. et al. | 2006
- 1203
-
Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal MaskMasuda, T. / Fujikawa, K. / Shibata, K. / Tamaso, H. / Hatsukawa, S. / Tokuda, H. / Saegusa, A. / Namikawa, Y. / Hayashi, H. et al. | 2006
- 1207
-
SiC Smart Power JFET Technology for High-Temperature ApplicationsSankin, I. / Bondarenko, V. / Kelley, R. L. / Casady, J. B. et al. | 2006
- 1211
-
Inherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFETKelley, R. L. / Brignac, T. / Mazzola, M. S. / Casady, J. B. et al. | 2006
- 1215
-
Current Sensing for SiC Power DevicesTournier, D. / Vellvehi, M. / Godignon, P. / Montserrat, J. / Planson, D. / Sarrus, F. et al. | 2006
- 1219
-
Fabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01mOmegaΩcm^2Tanaka, Y. / Yano, K. / Okamoto, M. / Takatsuka, A. / Fukuda, K. / Kasuga, M. / Arai, K. / Yatsuo, T. et al. | 2006
- 1223
-
RF and DC Characterization of Self-Aligned L-Band 4H-SiC Static Induction TransistorsMerrett, J. N. / Sankin, I. / Bondarenko, V. / Smith, C. E. / Kajfez, D. / Casady, J. R. B. et al. | 2006
- 1227
-
SiC MESFET with a Double Gate RecessNilsson, P. A. / Rorsman, N. / Sudow, M. / Andersson, K. / Hjelmgren, H. / Zirath, H. et al. | 2006
- 1231
-
High Power High Efficiency Lateral Epitaxy MESFETs in Silicon CarbideKonstantinov, A. O. / Svedberg, J. O. / Ray, I. C. / Harris, C. I. / Hallin, C. / Larsson, B. O. et al. | 2006
- 1235
-
RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC SubstrateOgata, M. / Katakami, S. / Ono, S. / Arai, M. et al. | 2006
- 1239
-
High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride PassivationMatocha, K. S. / Kaminsky, E. / Vertiatchikh, A. / Casady, J. B. et al. | 2006
- 1243
-
Double Gate 180V-128mA/mm SiC-MESFET for Power Switch ApplicationsTournier, D. / Vellvehi, M. / Godignon, P. / Jorda, X. / Millan, J. et al. | 2006
- 1247
-
The Role of Residual Source/Drain Implant Damage Traps on SiC MESFET Drain I-V CharacteristicsAdjaye, J. / Mazzola, M. S. / Los, A. V. et al. | 2006
- 1251
-
Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETsTrabelsi, M. / Sghaier, N. / Bluet, J. M. / Yacoubi, N. / Guillot, G. / Brylinski, C. et al. | 2006
- 1255
-
SiC Power MOSFETs - Status, Trends and ChallengesPeters, D. / Schoerner, R. / Friedrichs, P. / Stephani, D. et al. | 2006
- 1261
-
Development of 8 mOmega-cm^2, 1.8 kV 4H-SiC DMOSFETsRyu, S. H. / Krishnaswami, S. / Hull, B. A. / Heath, B. / Das, M. K. / Richmond, J. T. / Agarwal, A. K. / Palmour, J. W. / Scofield, J. D. et al. | 2006
- 1265
-
4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation AnnealFedison, J. B. / Cowen, C. S. / Garrett, J. L. / Downey, E. T. / Kretchmer, J. W. / Klinger, R. L. / Peters, H. C. / Tucker, J. B. / Matocha, K. S. / Rowland, L. B. et al. | 2006
- 1269
-
Optimum Design of Short-Channel 4H-SiC Power DMOSFETsSaha, A. / Cooper, J. A. et al. | 2006
- 1273
-
Realization of Large Area Vertical 3C-SiC MOSFET DevicesSchoner, A. / Bakowski, M. / Ericsson, P. / Stromberg, H. / Nagasawa, H. / Abe, M. et al. | 2006
- 1277
-
High Power-Density 4H-SiC RF MOSFETsGudjonsson, G. / Allerstam, F. / Olafsson, H. O. / Nilsson, P. A. / Hjelmgren, H. / Andersson, K. / Sveinbjornsson, E. O. / Zirath, H. / Rodle, T. / Jos, R. et al. | 2006
- 1281
-
4.3 mOmegacm^2, 1100 V 4H-SiC Implantation and Epitaxial MOSFETHarada, S. / Kato, M. / Okamoto, M. / Yatsuo, T. / Fukuda, K. / Arai, K. et al. | 2006
- 1285
-
Fabrication and Performance of 1.2 kV, 12.9 mOmegacm^2 4H-SiC Epilayer Channel MOSFETTarui, Y. / Watanabe, T. / Fujihira, K. / Miura, N. / Nakao, Y. / Imaizumi, M. / Sumitani, H. / Takami, T. / Ozeki, T. / Oomori, T. et al. | 2006
- 1289
-
Switching Characteristics of SiC-MOSFET and SBD Power ModulesImaizumi, M. / Tarui, Y. / Kinouchi, S. / Nakatake, H. / Nakao, Y. / Watanabe, T. / Fujihira, K. / Miura, N. / Takami, T. / Ozeki, T. et al. | 2006
- 1293
-
Characterization of 4H-SiC MOSFETs Formed on the Different Trench SidewallsNakao, H. / Mikami, H. / Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. et al. | 2006
- 1297
-
The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) SubstratesFujisawa, H. / Tsuji, T. / Nishiura, M. et al. | 2006
- 1301
-
Fabrication of 4H-SiC p-Channel MOSFET with High Channel MobilityOkamoto, M. / Tanaka, M. / Yatsuo, T. / Fukuda, K. et al. | 2006
- 1305
-
Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETsNoborio, M. / Negoro, Y. / Suda, J. / Kimoto, T. et al. | 2006
- 1309
-
Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400^oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation FurnaceKosugi, R. / Suzuki, K. / Takao, K. / Hayashi, Y. / Yatsuo, T. / Fukuda, K. / Ohashi, H. / Arai, K. et al. | 2006
- 1313
-
A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET DevicesKrishnaswami, S. / Ryu, S. H. / Heath, B. / Agarwal, A. K. / Palmour, J. W. / Geil, B. R. / Lelis, A. J. / Scozzie, C. J. et al. | 2006
- 1317
-
Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETsLelis, A. J. / Habersat, D. B. / Lopez, G. / McGarrity, J. M. / McLean, F. B. / Goldsman, N. et al. | 2006
- 1321
-
Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device SimulationPotbhare, S. / Pennington, G. / Goldsman, N. / Lelis, A. J. / Habersat, D. B. / McLean, F. B. / McGarrity, J. M. et al. | 2006
- 1325
-
Optimisation of 4H-SiC MOSFET Structures for Logic ApplicationsHorsfall, A. B. / Prentice, C. H. A. / Tappin, P. / Bhatnagar, P. / Wright, N. G. / Vassilevski, K. V. / Nikitina, I. P. et al. | 2006
- 1329
-
Evolution of Drift-Free, High Power 4H-SiC PiN DiodesDas, M. K. / Sumakeris, J. J. / Hull, B. A. / Richmond, J. et al. | 2006
- 1335
-
Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiCNeudeck, P. G. / Spry, D. J. / Trunek, A. J. et al. | 2006
- 1339
-
High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction DiodesLevinshtein, M. E. / Ivanov, P. A. / Boltovets, M. S. / Krivutsa, V. A. / Palmour, J. W. / Das, M. K. / Hull, B. A. et al. | 2006
- 1343
-
About the Nature of Recombination Current in 4H-SiC pn StructuresStrel chuk, A. M. / Mashichev, A. V. / Lebedev, A. A. / Volkova, A. N. / Zekentes, K. et al. | 2006
- 1347
-
Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion MicrobeamsOhshima, T. / Satoh, T. / Oikawa, M. / Onoda, S. / Hirao, T. / Itoh, H. et al. | 2006
- 1351
-
Demonstration of a 4H SiC Betavoltaic CellChandrashekhar, M. V. S. / Thomas, C. I. / Li, H. / Spencer, M. G. / Lal, A. et al. | 2006
- 1355
-
High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching ApplicationsHull, B. A. / Das, M. K. / Richmond, J. T. / Heath, B. / Sumakeris, J. J. / Geil, B. R. / Scozzie, C. J. et al. | 2006
- 1359
-
Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward DegradationNakayama, K. / Sugawara, Y. / Ishii, R. / Tsuchida, H. / Miyanagi, T. / Kamata, I. / Nakamura, T. et al. | 2006
- 1363
-
Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial RefillLosee, P. A. / Li, C. H. / Kumar, R. J. / Chow, T. P. / Bhat, I. B. / Gutmann, R. J. / Stahlbush, R. E. et al. | 2006
- 1367
-
Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AIN Capped AnnealingZhu, L. / Losee, P. A. / Chow, T. P. / Jones, K. A. / Scozzie, C. J. / Ervin, M. H. / Shah, P. B. / Derenge, M. A. / Vispute, R. D. / Venkatesan, T. et al. | 2006
- 1371
-
Demonstration of High-Voltage 4H-SiC Bipolar RF Power LimiterSu, M. / Xin, X. B. / Li, L. X. / Zhao, J. H. et al. | 2006
- 1375
-
Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 ^oC Temperature RangeBoltovets, M. S. / Basanets, V. V. / Camara, N. / Krivutsa, V. A. / Zekentes, K. et al. | 2006
- 1379
-
CM-Wave Modulator with High-Voltage 4H SiC pin DiodesBoltovets, M. S. / Basanets, V. V. / Zorenko, A. V. / Krivutsa, V. A. / Camara, N. / Orechovskij, V. O. / Simonchuk, V. I. / Zekentes, K. et al. | 2006
- 1383
-
Numerical Investigation of SiC Devices Performance Considering the Incomplete Dopant IonizationUdal, A. / Velmre, E. et al. | 2006
- 1387
-
High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n^+-GaN Subcontact LayerZhu, K. / Li, G. / Johnstone, D. / Fu, Y. / Leach, J. / Ganguly, B. / Litton, C. W. / Morkoc, H. et al. | 2006
- 1391
-
Advances in SiC GTO Development and Its ApplicationsSugawara, Y. et al. | 2006
- 1397
-
A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current ModulesAgarwal, A. K. / Krishnaswami, S. / Damsky, B. / Richmond, J. / Capell, C. / Ryu, S. H. / Palmour, J. W. et al. | 2006
- 1401
-
Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction RectifierZhu, L. / Chow, T. P. et al. | 2006
- 1405
-
Simulations of 10 kV Trench Gate IGBTs on 4H-SiCZhang, Q. C. / Ryu, S. H. / Jonas, C. / Agarwal, A. K. / Palmour, J. W. et al. | 2006
- 1409
-
Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTsAgarwal, A. K. / Krishnaswami, S. / Richmond, J. / Capell, C. / Ryu, S. H. / Palmour, J. / Geil, B. R. / Katsis, D. / Scozzie, C. J. / Stahlbush, R. E. et al. | 2006
- 1413
-
First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTsAgarwal, A. K. / Husna, F. / Haley, J. / Bartlow, H. / McCalpin, B. / Krishnaswami, S. / Capell, C. / Ryu, S. H. / Palmour, J. W. et al. | 2006
- 1417
-
1836 V, 4.7 mOmegaΩcm^2 High Power 4H-SiC Bipolar Junction TransistorZhang, J. H. / Wu, J. / Alexandrov, P. / Burke, T. / Sheng, K. / Zhao, J. H. et al. | 2006
- 1421
-
4H-SiC Bipolar Transistors with UHF and L-Band OperationPerez-Wurfl, I. / Zhao, F. / Huang, C. F. / Torvik, J. / Van Zeghbroeck, B. et al. | 2006
- 1425
-
Current Gain Dependence on Emitter Width in 4H-SiC BJTsDomeij, M. / Lee, H. S. / Zetterling, C. M. / Ostling, M. / Schoner, A. et al. | 2006
- 1429
-
Optimization of the Specific On-Resistance of 4H-SiC BJTsBalachandran, S. / Chow, T. P. / Agarwal, A. K. et al. | 2006
- 1433
-
Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar TransistorsBalachandran, S. / Chow, T. P. / Agarwal, A. K. et al. | 2006
- 1437
-
High Temperature Characterization of 4H-SiC Bipolar Junction TransistorsKrishnaswami, S. / Agarwal, A. K. / Richmond, J. / Capell, C. / Ryu, S. H. / Palmour, J. W. / Geil, B. R. / Katsis, D. / Scozzie, C. J. et al. | 2006
- 1441
-
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTsIvanov, P. A. / Levinshtein, M. E. / Agarwal, A. K. / Krishnaswami, S. / Palmour, J. W. et al. | 2006
- 1445
-
400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200^oC Baseplate TemperatureRichmond, J. / Ryu, S. H. / Krishnaswami, S. / Agarwal, A. K. / Palmour, J. W. / Geil, B. R. / Katsis, D. / Scozzie, C. J. et al. | 2006
- 1449
-
Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching DevicesSui, Y. / Walden, G. G. / Wang, X. K. / Cooper, J. A. et al. | 2006
- 1453
-
Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)Hayashi, T. / Shimoida, Y. / Tanaka, H. / Yamagami, S. / Tanimoto, S. / Hoshi, M. et al. | 2006
- 1457
-
SiC-Based MOSFETs for Harsh Environment Emissions SensorsSandvik, P. / Ali, M. / Tilak, V. / Matocha, K. S. / Stauden, T. / Tucker, J. B. / Deluca, J. / Ambacher, O. et al. | 2006
- 1461
-
Development of Ultra High Sensitivity UV Silicon Carbide DetectorsYan, F. / Xin, X. B. / Alexandrov, P. / Stahle, C. M. / Guan, B. / Zhao, J. H. et al. | 2006
- 1465
-
Silicon Carbide Power Diodes as Radiation DetectorsPhlips, B. F. / Hobart, K. D. / Kub, F. J. / Stahlbush, R. E. / Das, M. K. / De Geronimo, G. / O Connor, P. et al. | 2006
- 1469
-
Minimum Ionizing Particle Detector Based on p^+n Junction SiC DiodeMoscatelli, F. / Scorzoni, A. / Poggi, A. / Bruzzi, M. / Lagomarsino, S. / Sciortino, S. / Wagner, G. / Nipoti, R. et al. | 2006
- 1473
-
Radiation Hard Devices Based on SiCKalinina, E. / Strel chuk, A. M. / Lebedev, A. A. / Strokan, N. B. / Ivanov, A. M. / Kholuyanov, G. et al. | 2006
- 1477
-
The Limit of SiC Detector Energy Resolution in Ion SpectometryYakimova, R. / Lebedev, A. A. / Ivanov, A. M. / Strokan, N. B. / Syvajarvi, M. et al. | 2006
- 1483
-
Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiCEddy, C. R. / Bassim, N. D. / Mastro, M. A. / Henry, R. L. / Twigg, M. E. / Holm, R. T. / Culbertson, J. C. / Neudeck, P. G. / Powell, J. A. / Trunek, A. J. et al. | 2006
- 1489
-
Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC SubstratesAs, D. J. / Potthast, S. / Schormann, J. / Li, S. F. / Lischka, K. / Nagasawa, H. / Abe, M. et al. | 2006
- 1493
-
Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich ConditionShimizu, M. / Chonan, H. / Piao, G. / Okumura, H. / Nakanishi, H. et al. | 2006
- 1497
-
The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) SubstratesGu, Z. / Edgar, J. H. / Raghothamachar, B. / Dudley, M. / Zhuang, D. / Sitar, Z. et al. | 2006
- 1501
-
Growth of AIN and AIN-SiC Solid Solution by Sublimation MethodAnikin, M. / Chaussende, D. / Pernot, E. / Chaix-Pluchery, O. / Roussel, H. / Pons, M. / Madar, R. et al. | 2006
- 1505
-
Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network TemplatesOzgur, U. / Litton, C. W. / Fu, Y. / Moon, Y. T. / Yun, F. / Everitt, H. O. / Morkoc, H. et al. | 2006
- 1509
-
Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiCBassim, N. D. / Twigg, M. E. / Mastro, M. A. / Neudeck, P. G. / Eddy, C. R. / Henry, R. L. / Holm, R. N. / Powell, J. A. / Trunek, A. J. et al. | 2006
- 1513
-
Strain Relaxation in GaN/AIN Films Grown on Vicinal and On-Axis SiC SubstratesBai, J. / Huang, X. / Raghothamachar, B. / Dudley, M. / Wagner, B. / Davis, R. F. / Wu, L. / Zhu, Y. et al. | 2006
- 1517
-
Anisotropic Properties of GaN Studied by Raman ScatteringLin, H. C. / Feng, Z. C. / Chen, M. S. / Shen, Z. X. / Lu, W. / Collins, W. E. et al. | 2006
- 1521
-
Structural Characterization of Bulk AIN Single Crystals Grown from Self-Seeding and Seeding by SiC SubstratesRaghothamachar, B. / Dalmau, R. / Dudley, M. / Schlesser, R. / Zhuang, D. / Herro, Z. / Sitar, Z. et al. | 2006
- 1525
-
Asymmetric Interface Densities on n and p Type GaN MOS CapacitorsHuang, W. / Khan, T. / Chow, T. P. et al. | 2006
- 1529
-
Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force MicroscopyChevtchenko, S. / Fan, Q. / Litton, C. W. / Baski, A. A. / Morkoc, H. et al. | 2006
- 1533
-
Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall MeasurementsBiyikli, N. / Litton, C. W. / Xie, J. / Moon, Y. T. / Yun, F. / Stefanita, C. G. / Bandyopadhyay, S. / Meyer, J. R. / Morkoc, H. et al. | 2006
- 1537
-
Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC HeterostructuresLebedev, A. A. / Ledyaev, O. Y. / Strel chuk, A. M. / Kuznetsov, A. N. / Cherenkov, A. E. / Nikolaev, A. E. / Zubrilov, A. S. / Seredova, N. V. / Volkova, A. A. et al. | 2006
- 1541
-
Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN DiodesCao, X. A. / Larsen, M. / Lu, H. / Arthur, S. D. et al. | 2006
- 1545
-
Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar TransistorsSuda, J. / Nakano, Y. / Shimada, S. / Amari, K. / Kimoto, T. et al. | 2006
- 1549
-
Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)Lee, S. K. / Seong, H. K. / Choi, K. C. / Cho, N. K. / Choi, H. J. / Suh, E. K. / Nahm, K. S. et al. | 2006
- 1553
-
GaN Resistive Gas Sensors for Hydrogen DetectionYun, F. / Fawcett, T. J. / Chevtchenko, S. / Moon, Y. T. / Morkoc, H. / Wolan, J. T. et al. | 2006
- 1559
-
Atomic Layer Epitaxy of (Si~1~-~xC~1~-~y)Ge~x~+~y Layers on 4H-SiCPezoldt, J. / Kups, T. / Weih, P. / Stauden, T. / Ambacher, O. et al. | 2006
- 1563
-
Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)Ferro, G. / Polychroniadis, E. K. / Panknin, D. / Skorupa, W. / Stoemenos, J. / Monteil, Y. et al. | 2006
- 1567
-
Optical Characterization of ZnO Materials Grown by Modified Melt Growth TechniqueFeng, Z. C. / Yu, J. W. / Wang, J. B. / Varatharajan, R. / Nemeth, B. / Nause, J. / Ferguson, I. / Lu, W. / Collins, W. E. et al. | 2006
- 1571
-
The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for DevicesLitton, C. W. / Alivov, Y. I. / Johnstone, D. / Ozgur, U. / Avrutin, V. S. / Fan, Q. / Akarca-Biyikli, S. S. / Zhu, K. / Morkoc, H. et al. | 2006
- 1575
-
Role of Oxygen in Growth of Carbon Nanotubes on SiCLu, W. / Boeckl, J. / Mitchel, W. C. / Rigueur, J. / Collins, W. E. et al. | 2006
- 1579
-
Structural and Electrical Characteristics of Carbon Nanotubes Formed on Silicon Carbide Substrates by Surface DecompositionBoeckl, J. / Mitchel, W. C. / Lu, W. / Rigueur, J. et al. | 2006
- 1583
-
First Principles Modelling of Scroll-to-Nanotube Defect: Screw-Type DislocationSuarez-Martinez, I. / Savini, G. / Heggie, M. I. et al. | 2006
- 1587
-
SNOM Investigation of Surface Morphology Changes during Cr/Au Contact Fabrication on Single-Crystal CVD DiamondDoneddu, D. / Guy, O. J. / Baylis, R. M. / Chen, L. / Dunstan, P. R. / Mawby, P. A. / Pirri, C. F. / Ferrero, S. / Twitchen, D. / Tajani, A. et al. | 2006