1.3 mum VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots - three candidates as active material [6484-14] (Englisch)
- Neue Suche nach: Gilet, P.
- Neue Suche nach: Pougeoise, E.
- Neue Suche nach: Grenouillet, L.
- Neue Suche nach: Grosse, P.
- Neue Suche nach: Olivier, N.
- Neue Suche nach: Poncet, S.
- Neue Suche nach: Chelnokov, A.
- Neue Suche nach: Gerard, J. M.
- Neue Suche nach: Stevens, R.
- Neue Suche nach: Hamelin, R.
- Neue Suche nach: Society of Photo-optical Instrumentation Engineers
- Neue Suche nach: Gilet, P.
- Neue Suche nach: Pougeoise, E.
- Neue Suche nach: Grenouillet, L.
- Neue Suche nach: Grosse, P.
- Neue Suche nach: Olivier, N.
- Neue Suche nach: Poncet, S.
- Neue Suche nach: Chelnokov, A.
- Neue Suche nach: Gerard, J. M.
- Neue Suche nach: Stevens, R.
- Neue Suche nach: Hamelin, R.
- Neue Suche nach: Choquette, Kent D.
- Neue Suche nach: Guenter, James K.
- Neue Suche nach: Society of Photo-optical Instrumentation Engineers
In:
Vertical-cavity surface-emitting lasers
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64840F
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2007
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:1.3 mum VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots - three candidates as active material [6484-14]
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Beteiligte:Gilet, P. ( Autor:in ) / Pougeoise, E. ( Autor:in ) / Grenouillet, L. ( Autor:in ) / Grosse, P. ( Autor:in ) / Olivier, N. ( Autor:in ) / Poncet, S. ( Autor:in ) / Chelnokov, A. ( Autor:in ) / Gerard, J. M. ( Autor:in ) / Stevens, R. ( Autor:in ) / Hamelin, R. ( Autor:in )
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Kongress:Conference; 11th, Vertical-cavity surface-emitting lasers ; 2007 ; SanJose, CA
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Erschienen in:
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsort:Bellingham, Wash.
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Erscheinungsdatum:01.01.2007
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Format / Umfang:64840F
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Anmerkungen:Includes bibliographical references and author index.
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 64840A
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Modulation properties of VCSEL with intracavity modulatorvan Eisden, J. / Yakimov, M. / Tokranov, V. / Varanasi, M. / Mohammed, E. M. / Young, I. A. / Oktyabrsky, S. et al. | 2007
- 64840B
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Demonstration of all optical logic gates by single/differential typed vertical cavity laser with depleted optical thyristorChoi, Woon-Kyung / Kim, Doo-Gun / Moon, Yon-Tae / Kim, Do-Gyun / Kim, Hoseong / Chung, Tae Kyung / Choi, Young-Wan / Choquette, Kent D. / Lee, Seok / Woo, Deok-Ha et al. | 2007
- 64840C
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Fabrication and characterization of individually addressable vertical-cavity surface-emitting laser arrays and integrated VCSEL/PIN detector arraysKasten, A. M. / Giannopoulos, A. V. / Long, C. / Chen, C. / Choquette, K. D. et al. | 2007
- 64840E
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Low-threshold current low-resistance 1.3 μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBEYu, Hsin-Chieh / Wang, Jyh-Shyang / Su, Yan-Kuin / Chang, Shoou-Jinn / Kuo, Hao-Chung / Lai, Fang-I / Chang, Y. H. / Yang, Hong-Pin D. et al. | 2007
- 64840F
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1.3 μm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active materialGilet, Ph. / Pougeoise, E. / Grenouillet, L. / Grosse, Ph. / Olivier, N. / Poncet, S. / Chelnokov, A. / Gérard, J. M. / Stevens, R. / Hamelin, R. et al. | 2007
- 64840G
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1.55μm InP-based electrically pumped VECSELs: comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devicesBousseksou, A. / Bouchoule, S. / El Kurdi, M. / Sagnes, I. / Beaudoin, G. / Crozat, P. / Jacquet, J. et al. | 2007
- 64840I
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Numerical simulation of temperature-dependence on distributed Bragg reflector (DBR) and performance analyses for proton-implant/oxide confined VCSEL: comparison with transmission matrix, matrix calculating methods, and Macleod modelTsai, Hong-Mau / Tang, Shiang-Feng / Sua, Shih-Tsang / Chen, Tzu-Chiang / Chiang, Cheng-Der et al. | 2007
- 64840J
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Progress and issues for high-speed vertical cavity surface emitting lasersLear, Kevin L. / Al-Omari, Ahmad N. et al. | 2007
- 64840K
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Characterization of 1.55 μm VCSELs using high-resolution and high-dynamic range measurements of the CW optical spectrumVillafranca, Asier / Lasobras, Javier / Garcés, Ignacio et al. | 2007
- 64840L
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Single-mode proton-implanted photonic crystal VCSELsLeisher, Paul O. / Chen, Chen / Siriani, Dominic F. / Sulkin, Joshua D. / Choquette, Kent D. et al. | 2007
- 648401
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Front Matter: Volume 6484| 2007
- 648402
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Design and manufacturing of 10G GenX VCSELs at Emcore (Invited Paper) [6484-01]Li, N.-Y. / Collins, D. / Jatar, S. / Lavrova, O. / Helms, C. / Luo, W. / Liu, L. / Liu, C. / Qiu, M. / Roff, K. et al. | 2007
- 648402
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Design and manufacturing of 10G GenX VCSELs at EmcoreLi, Nein-Yi / Collins, Doug / Jatar, Shashank / Lavrova, Olga / Helms, Chris / Luo, Wenlin / Liu, Linlin / Liu, Chiyu / Qiu, Mei / Roff, Kent et al. | 2007
- 648403
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VCSEL proliferation [6484-02]Tatum, J. / Society of Photo-optical Instrumentation Engineers et al. | 2007
- 648403
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VCSEL proliferationTatum, Jim et al. | 2007
- 648404
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High output power 670nm VCSELsJohnson, Klein / Hibbs-Brenner, Mary et al. | 2007
- 648404
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High output power 670nm VCSELs [6484-03]Johnson, K. / Hibbs-Brenner, M. / Society of Photo-optical Instrumentation Engineers et al. | 2007
- 648405
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A TCAD approach to robust ESD design in oxide-confined VCSELs [6484-04]Meier, H. / Santschi, R. / Odermatt, S. / Witzigmann, B. / Eitel, S. / Nallet, F. / Letay, G. / Society of Photo-optical Instrumentation Engineers et al. | 2007
- 648405
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A TCAD approach to robust ESD design in oxide-confined VCSELsMeier, Hektor / Santschi, Rafael / Odermatt, Stefan / Witzigmann, Bernd / Eitel, Sven / Nallet, Franck / Letay, Gergö et al. | 2007
- 648406
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VCSELs for atomic sensors (Invited Paper) [6484-05]Serkland, D. K. / Geib, K. M. / Peake, G. M. / Lutwak, R. / Rashed, A. / Varghese, M. / Tepolt, G. / Prouty, M. / Society of Photo-optical Instrumentation Engineers et al. | 2007
- 648406
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VCSELs for atomic sensorsSerkland, D. K. / Geib, K. M. / Peake, G. M. / Lutwak, R. / Rashed, A. / Varghese, M. / Tepolt, G. / Prouty, M. et al. | 2007
- 648407
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New markets for VCSELS: pulsed operation of high-power devices [6484-06]Grabherr, M. / Miller, M. / Wiedenmann, D. / Jager, R. / King, R. / Society of Photo-optical Instrumentation Engineers et al. | 2007
- 648407
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New markets for VCSELS: pulsed operation of high-power devicesGrabherr, Martin / Miller, Michael / Wiedenmann, Dieter / Jäger, Roland / King, Roger et al. | 2007
- 648408
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Heterogenous integrated waveguide-coupled VCSEL-based optical interconnectsCheng, Julian / Yang, Kai / Patel, K. M. / Eustis, T. J. / Louderback, D. A. / Jin, X. J. / Chao, C. Y. / Schoengarth, J. / Guilfoyle, P. S. / Shih, M.-Y. et al. | 2007
- 648408
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Heterogenous integrated waveguide-coupled VCSEL-based optical interconnects (Invited Paper) [6484-07]Cheng, J. / Yang, K. / Patel, K. M. / Eustis, T. J. / Louderback, D. A. / Jin, X. J. / Chao, C. Y. / Schoengarth, J. / Shih, M.-Y. / Guilfoyle, P. S. et al. | 2007
- 648409
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Monolithic integration of VCSELs and MSM photodiodes for bidirectional multimode fiber communications (Invited Paper) [6484-08]Michalzik, R. / Stach, M. / Rinaldi, F. / Lorch, S. / Society of Photo-optical Instrumentation Engineers et al. | 2007
- 648409
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Monolithic integration of VCSELs and MSM photodiodes for bidirectional multimode fiber communicationsMichalzik, Rainer / Stach, Martin / Rinaldi, Fernando / Lorch, Steffen et al. | 2007
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Demonstration of all optical logic gates by single/differential typed vertical cavity laser with depleted optical thyristor [6484-10]Choi, W.-K. / Kim, D.-G. / Moon, Y.-T. / Kim, H. / Chung, T. K. / Choi, Y.-W. / Choquette, K. D. / Lee, S. / Woo, D.-H. / Society of Photo-optical Instrumentation Engineers et al. | 2007
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Single-mode proton-implanted photonic crystal VCSELs [6484-18]Leisher, P. O. / Chen, C. / Siriani, D. F. / Sulkin, J. D. / Choquette, K. D. / Society of Photo-optical Instrumentation Engineers et al. | 2007
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1.55mum InP-based electrically pumped VECSELs: comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices [6484-15]Bousseksou, A. / Bouchoule, S. / El Kurdi, M. / Sagnes, I. / Beaudoin, G. / Crozat, P. / Jacquet, J. / Society of Photo-optical Instrumentation Engineers et al. | 2007
-
Fabrication and characterization of individually addressable vertical-cavity surface-emitting laser arrays and integrated VCSEL/PIN detector arrays [6484-11]Kasten, A. M. / Giannopoulos, A. V. / Long, C. / Chen, C. / Choquette, K. D. / Society of Photo-optical Instrumentation Engineers et al. | 2007
-
1.3 mum VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots - three candidates as active material [6484-14]Gilet, P. / Pougeoise, E. / Grenouillet, L. / Grosse, P. / Olivier, N. / Poncet, S. / Chelnokov, A. / Gerard, J. M. / Stevens, R. / Hamelin, R. et al. | 2007
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Characterization of 1.55 mum VCSELs using high-resolution and high-dynamic range measurements of the CW optical spectrum [6484-17]Villafranca, A. / Lasobras, J. / Garces, I. / Society of Photo-optical Instrumentation Engineers et al. | 2007
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Progress and issues for high-speed vertical cavity surface emitting lasers (Invited Paper) [6484-16]Lear, K. L. / Al-Omari, A. N. / Society of Photo-optical Instrumentation Engineers et al. | 2007
-
Numerical simulation of temperature-dependence on distributed Bragg reflector (DBR) and performance analyses for proton-implant/oxide confined VCSEL: comparison with transmission matrix, matrix calculating methods, and Macleod model [6484-20]Tsai, H.-M. / Tang, S.-F. / Sua, S.-T. / Chen, T.-C. / Chiang, C.-D. / Society of Photo-optical Instrumentation Engineers et al. | 2007
-
Modulation properties of VCSEL with intracavity modulator [6484-09]van Eisden, J. / Yakimov, M. / Tokranov, V. / Varanasi, M. / Mohammed, E. M. / Young, I. A. / Oktyabrsky, S. / Society of Photo-optical Instrumentation Engineers et al. | 2007
-
Low-threshold current low-resistance 1.3 mum InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE [6484-13]Yu, H.-C. / Wang, J.-S. / Su, Y.-K. / Chang, S.-J. / Kuo, H.-C. / Lai, F.-I. / Chang, Y. H. / Yang, H.-P. D. / Society of Photo-optical Instrumentation Engineers et al. | 2007