Delineation of Crystalline Defects by Preferential Etching: Still more Alchemy than Science? (Englisch)
- Neue Suche nach: Kolbesen, B. O.
- Neue Suche nach: Electrochemical Society
- Neue Suche nach: Kolbesen, B. O.
- Neue Suche nach: Claeys, C. L.
- Neue Suche nach: Electrochemical Society
In:
High purity silicon
4
;
361-364
;
2006
-
ISBN:
- Aufsatz (Konferenz) / Print
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Titel:Delineation of Crystalline Defects by Preferential Etching: Still more Alchemy than Science?
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Beteiligte:
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Kongress:SYMPOSIUM; 9th, High purity silicon ; 2006 ; Cancun, Mexico
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Erschienen in:High purity silicon , 4 ; 361-364ECS TRANSACTIONS ; 3, 4 ; 361-364
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Verlag:
- Neue Suche nach: Electrochemical Society
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Erscheinungsort:Pennington, N.J.
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Erscheinungsdatum:01.01.2006
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Format / Umfang:4 pages
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Anmerkungen:Includes bibliographical references and index; Held at the 210th meeting of the Electrochemical Society
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Some Observations of Growth of CZ Silicon and Dream of ``Ideal Growth''Anttila, O. / Electrochemical Society et al. | 2006
- 25
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Elimination of Dislocations in the Neck GrowthSreedharamurthy, H. / Nithianathan, V. / Electrochemical Society et al. | 2006
- 31
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High Pulling Rate Defect-Free Crystals with Axially Asymmetric Characteristics Due to Controlled Melt ConvectionCho, H. / Lee, B. / Lee, S. / Lee, J. / Electrochemical Society et al. | 2006
- 41
-
Melt Flow Simulations of Czochralski Crystal Growth Process of Silicon for Large CrystalsGunjal, P. R. / Kulkarni, M. S. / Ramachandran, P. A. / Electrochemical Society et al. | 2006
- 53
-
Doping of Silicon Crystals with Bi and other Volatile Elements by the Pedestal Growth TechniqueRiemann, H. / Abrosimov, N. / Noetzel, N. / Electrochemical Society et al. | 2006
- 61
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Rotationless Floating Zone Crystal GrowthLuedge, A. / Riemann, H. / Hallmann-Seiffert, B. / Muiznieks, A. / Schulze, F. / Electrochemical Society et al. | 2006
- 71
-
Oxygen Precipitation in Lightly and Heavily Doped Czochralski SiliconSueoka, K. / Electrochemical Society et al. | 2006
- 89
-
Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal ProcessYang, D. / Ma, Q. / Ma, X. / Duan, D. / Electrochemical Society et al. | 2006
- 97
-
Oxide Precipitation via Coherent ``Seed''-Oxide PhasesKissinger, G. / Dabrowski, J. / Electrochemical Society et al. | 2006
- 113
-
Nitrogen Diffusion in Silicon: a Multi-Species ProcessVoronkov, V. V. / Falster, R. J. / Electrochemical Society et al. | 2006
- 127
-
First-Principle Study on the Identification of Nitrogen-Oxygen Defect Domplexes in SiliconFujita, N. / Jones, R. / Oberg, S. / Briddon, P. / Electrochemical Society et al. | 2006
- 135
-
Hydrogen-Related Donor Formation: Fabrication Techniques, Characterization, and Application to High-voltage Superjunction TransistorsSchulze, H. / Buzzo, M. / Niedernostheide, F. / Rueb, M. / Job, R. / Electrochemical Society et al. | 2006
- 147
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Hydrogen Gettering and Platelet Formation in Implanted and Hydrogenated SiliconJob, R. / Dungen, W. / Ma, Y. / Fahrner, W. R. / Keller, L. O. / Horstmann, J. T. / Fiedler, H. / Electrochemical Society et al. | 2006
- 159
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Precise Control of Annealed Wafer For Nanometer DevicesMatsushita, Y. / Nagahama, H. / Takeda, R. / Hirasawa, M. / Electrochemical Society et al. | 2006
- 171
-
Ab-Initio Calculations of the Energetics and Kinetics of Defects and Impurities in SiliconWindl, W. / Electrochemical Society et al. | 2006
- 183
-
Lateral Incorporation of the Intrinsic Point Defects in Czochralski Silicon CrystalsKulkarni, M. S. / Electrochemical Society et al. | 2006
- 199
-
Mechanical Stress and Defect Formation in Device ProcessingPolignano, M. / Carnevale, G. / Fantini, P. / Mica, I. / Electrochemical Society et al. | 2006
- 211
-
Simulation of Slip during High-Temperature Annealing of Silicon Wafers in Vertical FurnacesGupta, P. / Kulkarni, M. S. / Electrochemical Society et al. | 2006
- 225
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Effects of Annealing on the Electrical Properties of Nitrogen-Doped Float-Zoned SiliconVoronkov, V. V. / Voronkova, G. / Batunina, A. / Falster, R. J. / Moiraghi, L. / Milvidski, M. / Electrochemical Society et al. | 2006
- 239
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Nitrogen-Doped Silicon: Mechanical, Transport and Electrical PropertiesMurphy, J. D. / Alpass, C. R. / Giannattasio, A. / Senkader, S. / Emiroglu, D. / Evans-Freeman, J. H. / Falster, R. J. / Wilshaw, P. R. / Electrochemical Society et al. | 2006
- 255
-
Analysis of the Segregation Phenomena of Copper in P/P+ Epitaxial Silicon WefersNakamura, K. / Iga, H. / Tomioka, J. / Electrochemical Society et al. | 2006
- 267
-
Reducing Iron in Single Crystal Silicon Grown Using CZ ProcessSreedharamurthy, H. / Electrochemical Society et al. | 2006
- 273
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Modeling and Optimization of Internal Gettering of Iron in SiliconHaarahiltunen, A. / Vainola, H. / Yli-Koski, M. / Sinkkonen, J. / Anttila, O. / Electrochemical Society et al. | 2006
- 285
-
Performance-Limiting Oxygen-Related Defects in Silicon Solar CellsSchmidt, J. / Bothe, K. / Electrochemical Society et al. | 2006
- 299
-
Proof of Interstitial Cobalt Defects in Silicon Float Zone Crystals Doped during Crystal GrowthLemke, H. / Irmscher, K. / Electrochemical Society et al. | 2006
- 313
-
Infrared Absorption Spectroscopy of Complexes in Low Carbon Concentration, Low Dose Irradiated CZ Silicon CrystalInoue, N. / Yamazaki, S. / Goto, Y. / Kushida, T. / Sugiyama, T. / Electrochemical Society et al. | 2006
- 321
-
Some Recent Advances in Contactless Silicon CharacterizationSchroder, D. / Electrochemical Society et al. | 2006
- 339
-
Comparative Study of Carrier Lifetime Variations with Doping in Si and GeVanhellemont, J. / Gaubas, E. / Electrochemical Society et al. | 2006
- 351
-
Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI TransistorsGaleti, M. / Martino, J. A. / Simoen, E. R. / Claeys, C. L. / Electrochemical Society et al. | 2006
- 361
-
Delineation of Crystalline Defects by Preferential Etching: Still more Alchemy than Science?Kolbesen, B. O. / Electrochemical Society et al. | 2006
- 365
-
Evaluation of Silicon Photovoltaic Devices with Near-Field Scanning Optical MicroscopyRozgonyi, G. / Wagener, M. C. / Electrochemical Society et al. | 2006
- 375
-
Observation of Vacancy in High Purity Silicon Crystal Using Low-Temperature Ultrasonic MeasurementsGoto, T. / Yamada-Kaneta, H. / Saito, Y. / Nemoto, Y. / Sato, K. / Kakimoto, K. / Nakamura, S. / Electrochemical Society et al. | 2006
- 387
-
DLTS Study of Room-Temperature Defect Annealing in High-Purity n-Type SiBleka, J. / Monakhov, E. V. / Avset, B. S. / Svensson, B. G. / Electrochemical Society et al. | 2006
- 397
-
SOI Material Readiness for 45nm and Sub-45nm Device OptionsMaleville, C. / Electrochemical Society et al. | 2006
- 409
-
Fabrication of Directly Bonded Si Substrates with Hybrid Crystal Orientation for Advanced Bulk CMOS TechnologyBourdelle, K. / Rayssac, O. / Lambert, A. / Fournel, F. / Hebras, X. / Allibert, F. / Figuet, C. / Boussagol, A. / Berne, C. / Tsyganenko, K. et al. | 2006
- 417
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From Smart-Cut to Soft-Cut: Mechanisms of Hydrogen Plasma Supported Layer Exfoliation in SiliconJob, R. / Dungen, W. / Ma, Y. / Horstmann, J. T. / Electrochemical Society et al. | 2006
- 429
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Regular Dislocation Networks in Silicon as a Tool for Novel Device ApplicationKittler, M. / Reiche, M. / Seifert, W. / Yu, X. / Arguirov, T. / Vyvenko, O. / Mchedlidze, T. / Wilhelm, T. / Electrochemical Society et al. | 2006
- 451
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Brother Silicon, Sister GermaniumVanhellemont, J. / Simoen, E. R. / Electrochemical Society et al. | 2006
- 469
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Effect of Intrinsic Gettering on Semiconductor Device Performance in SOI SubstratesNevin, A. / Hoelke, A. / Electrochemical Society et al. | 2006
- 481
-
New Silicon-Based Materials for Spintronics Applications - Si:V and Si:CrMisiuk, A. / Chow, L. / Barcz, A. / Surma, B. / Bak-Misiuk, J. / Romanowski, P. / Electrochemical Society et al. | 2006