SURFACE ROUGHNESS IN SILICON CARBIDE TECHNOLOGY (Englisch)
- Neue Suche nach: Chang, K.
- Neue Suche nach: Witt, T.
- Neue Suche nach: Hoff, A.
- Neue Suche nach: Woodin, R.
- Neue Suche nach: Ridley, R.
- Neue Suche nach: Dolny, G.
- Neue Suche nach: Shanmugasundaram, K.
- Neue Suche nach: Oborina, E.
- Neue Suche nach: Ruzyllo, J.
- Neue Suche nach: Electrochemical Society
- Neue Suche nach: Chang, K.
- Neue Suche nach: Witt, T.
- Neue Suche nach: Hoff, A.
- Neue Suche nach: Woodin, R.
- Neue Suche nach: Ridley, R.
- Neue Suche nach: Dolny, G.
- Neue Suche nach: Shanmugasundaram, K.
- Neue Suche nach: Oborina, E.
- Neue Suche nach: Ruzyllo, J.
- Neue Suche nach: Ruzyllo, J.
- Neue Suche nach: Hattori, T.
- Neue Suche nach: Novak, R. E.
- Neue Suche nach: Electrochemical Society
In:
Cleaning technology in semiconductor device manufacturing
3
;
228-233
;
2006
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:SURFACE ROUGHNESS IN SILICON CARBIDE TECHNOLOGY
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Beteiligte:Chang, K. ( Autor:in ) / Witt, T. ( Autor:in ) / Hoff, A. ( Autor:in ) / Woodin, R. ( Autor:in ) / Ridley, R. ( Autor:in ) / Dolny, G. ( Autor:in ) / Shanmugasundaram, K. ( Autor:in ) / Oborina, E. ( Autor:in ) / Ruzyllo, J. ( Autor:in ) / Ruzyllo, J.
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Kongress:INTERNATIONAL SYMPOSIUM; 9th, Cleaning technology in semiconductor device manufacturing ; 2005 ; Los Angeles, CA
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Erschienen in:ECS TRANSACTIONS ; 1, 3 ; 228-233
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Verlag:
- Neue Suche nach: Electrochemical Society
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Erscheinungsort:Pennington, N.J.
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Erscheinungsdatum:01.01.2006
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Format / Umfang:6 pages
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Anmerkungen:Includes bibliographical references and indexes
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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MANAGEMENT OF METALLIC CONTAMINATION IN ADVANCED IC MANUFACTURINGDanel, A. / Renaud, D. / Besson, P. / Bigot, C. / Grouillet, A. / Joly, J. P. / Claes, M. / Bearda, T. / Frickinger, J. / Electrochemical Society et al. | 2006
- 11
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A NEW SEMICONDUCTOR CLEANING METHOD BY THE USE OF DEFECT PASSIVATION ETCHLESS CLEANINGTakahashi, M. / Liu, I.-L. / Narita, H. / Kobayashi, H. / Electrochemical Society et al. | 2006
- 19
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THE EFFECT OF FILTER MATERIAL CLEANLINESS ON WAFER SURFACE METALS CONTAMINATIONRoche, T. S. / Gutowski, T. B. / Electrochemical Society et al. | 2006
- 26
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NANOSCALE PARTICLES REMOVAL ON AN EXTREME ULTRA-VIOLET LITHOGRAPHY (EUVL) MASK LAYER BY LASERSHOCK CLEANINGLee, S.-H. / Park, J.-G. / Busnaina, A. A. / Lee, J.-M. / Kim, T.-H. / Zhang, G. / Eschbach, F. / Ramamoorthy, A. / Electrochemical Society et al. | 2006
- 33
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LASER CLEANING OF NANO- TO MICROCONTAMINANTS FROM CRITICAL SILICON SURFACESKudryashov, S. I. / Shukla, S. / Allen, S. D. / Electrochemical Society et al. | 2006
- 43
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SURFACE PREPARATION ISSUES ASSOCIATED WITH HIGH-k/METAL GATE DEVICESBarnett, J. / Moumen, N. / Peterson, J. J. / Kirsch, P. / Neugroschel, A. / Bersuker, G. / Huff, H. R. / Electrochemical Society et al. | 2006
- 51
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SUPRESSION OF SURFACE MICRO-ROUGHNESS OF SILICON WAFER BY ADDITION OF ALCOHOL INTO ULTRA PURE WATER FOR RINSING PROCESSYamamoto, M. / Nii, K. / Morinaga, H. / Teramoto, A. / Ohmi, T. / Electrochemical Society et al. | 2006
- 59
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CLEANING OF CROSS-CONTAMINATION OF HIGH-k DILECTRICS IN PLASMA ETCH TOOLPandit, V. / Parks, H. G. / Vermeire, B. / Raghavan, S. / Electrochemical Society et al. | 2006
- 67
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SELECTIVE REMOVAL OF Ni FOR SALICIDATION AND FULLY SILICIDED GATESKraus, K. / Leston, V. F. / Snow, J. / Xu, K. / de Potter de ten Broeck, M. / Lauwers, A. / Mertens, P. W. / Kovacs, F. / Electrochemical Society et al. | 2006
- 75
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THE EFFECT OF OXYGEN CONCENTRATION IN CLEANING PROCESS ON SILICON SURFACEMizutani, N. / Morinaga, H. / Teramoto, A. / Ohmi, T. / Electrochemical Society et al. | 2006
- 82
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POLY SIDEWALL CHEMICAL OXIDATION TECHNIQUEMitra, R. / Electrochemical Society et al. | 2006
- 89
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IMPROVEMENT OF YIELD AND QUALITY OF EPITAXIAL WAFERS IN MASS PRODUCTIONBigot, C. / Nguyen, M. C. / Danel, A. / Electrochemical Society et al. | 2006
- 97
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DEGRADATION OF CHELATING AGENTS IN HYDROGEN PEROXIDE AND APM+ SOLUTIONSDoll, O. / Metzger, S. / Kolbesen, B. O. / Electrochemical Society et al. | 2006
- 105
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EFFECT OF SILICON SURFACE CONDITION ON FILM FORMATION USING MIST DEPOSITIONShanmugasundaram, K. / Chang, K. / Ruzyllo, J. / Electrochemical Society et al. | 2006
- 111
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HIGH DOSE IMPLANT STRIP IN FEOL IC MANUFACTURING USING A COMBINATION OF CRYOGENIC AND WET CLEANING TECHNIQUESBanerjee, S. / Borade, R. / Sato, M. / Hirate, S. / Cross, P. / Raghavan, S. / Electrochemical Society et al. | 2006
- 119
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DEVELOPMENT OF HIGH SELECTIVITY POLY-Si STRIP PROCESS BY USING REMOTE PLASMAHan, J. / Shim, W. / Choi, S. / Hong, C. / Cho, H. / Moon, J. / Electrochemical Society et al. | 2006
- 127
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AN INVESTIGATION OF THE CRITICAL PARAMETERS OF AN ATOMIZED, ACCELERATED LIQUID SPRAY TO REMOVE PARTICLESVerhaverbeke, S. / Gouk, R. / Porras, E. / Ko, A. / Endo, R. / Brown, B. / Lee, J. T.C. / Electrochemical Society et al. | 2006
- 134
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SINGLE - WAFER WET CLEANING FOR A HIGH PARTICLE REMOVAL EFFICIENCY ON HYDROPHOBIC SURFACESano, K. / Izumi, A. / Eitoku, A. / Snow, J. / Kesters, E. / Mertens, P. / Electrochemical Society et al. | 2006
- 142
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A DAMAGE-FREE ULTRA-DILUTED HF/N~2 JET SPRAY FOR PARTICLE REMOVAL WITH MINIMAL SILICON AND OXIDE LOSSHirano, H. / Sato, K. / Osaka, T. / Kuniyasu, H. / Hattori, T. / Electrochemical Society et al. | 2006
- 150
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SINGLE-WAFER TOOL PERFORMS RE-CONTAMINATION FREE IN WET WAFER CLEANINGLiu, L. / Walter, A. / Novak, R. / Electrochemical Society et al. | 2006
- 158
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KEYS TO ADVANCED SINGLE WAFER CLEANING - GAS CONTEND, BUBBLE SIZE DISTRIBUTION AND CHEMISTRYLippert, A. / Engesser, P. / Gleissner, A. / Koffler, M. / Kumnig, F. / Obweger, R. / Pfeuffer, A. / Rogatschnig, R. / Okorn-Schmidt, H. / Electrochemical Society et al. | 2006
- 164
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EFFICIENT CLEANING OF LOW-k MATERIALS USING SINGLE-WAFER CLEANING SOLUTION: A COMPATIBILITY STUDY AND ELECTRICAL CHARACTERIZATIONLe, Q. T. / Van Olmen, J. / Vanderheyden, R. / Kesters, E. / Kenis, K. / Conard, T. / Boullart, W. / Baklanov, M. R. / Vanhaelemeersch, S. / Electrochemical Society et al. | 2006
- 172
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MEETING THE CRITICAL CLEANING CHALLENGES FOR 65 nm AND BEYOND USING A SINGLE WAFER PROCESSING WITH NOVEL MEGASONICS AND DRYING TECHNOLOGIESPark, I. S. / Choi, S. J. / Hong, C. K. / Cho, H. K. / Lu, Y. Q. / Baiya, E. / Rosato, J. J. / Yalamanchili, M. R. / Hansen, E. / Electrochemical Society et al. | 2006
- 180
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BENEFITS OF SINGLE WAFER POLYMER REMOVAL WITH INORGANIC CHEMICALS ON FEOL AND BEOL STRUCTURES OF DRAMSHaigermoser, C. / Henry, S. A. / Rho, E.-S. / Song, J. / Kim, H. / Electrochemical Society et al. | 2006
- 187
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AIR FLOW IN A SQUARE QUARTZ PLATE SPIN CLEANERHabuka, H. / Pan, H. / Fujita, K. / Kato, M. / Takeuchi, T. / Aihara, M. / Electrochemical Society et al. | 2006
- 194
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IMPROVED DEFECTIVITY FOR BEOL CLEANS USING SINGLE WAFER MEGASONICSLee, L. Y. / Thanigaivelan, T. / So, J. / Frasier, B. / Kashkoush, I. / Electrochemical Society et al. | 2006
- 201
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A STUDY ON SELECTIVE SiGe ETCH FOR THREE-DIMENSIONAL Si STRUCTURE APPLICATIONSLee, H. / Han, J. / Shim, W. / Hong, C. / Cho, H. / Moon, J. / Electrochemical Society et al. | 2006
- 207
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SELECTIVE ETCHING OF SiGe FOR REMOVAL OF DUMMY LAYERS IN FULLY SILICIDED GATE ARCHITECTURESSnow, J. / Vos, R. / Anil, K. G. / Kraus, H. / Xu, K. / Grinninger, F. / Wagner, G. / Kovacs, F. / Mertens, P. W. / Electrochemical Society et al. | 2006
- 214
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STUDY OF GERMANIUM SURFACE IN WET CHEMICAL SOLUTIONS FOR SURFACE CLEANING APPLICATIONSKim, J. / Saraswat, K. / Nishi, Y. / Electrochemical Society et al. | 2006
- 220
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METAL DEPOSITION ON Ge SURFACESSioncke, S. / Onsia, B. / Struys, K. / Rip, J. / Vos, R. / Meuris, M. / Mertens, P. / Theuwis, A. / Electrochemical Society et al. | 2006
- 228
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SURFACE ROUGHNESS IN SILICON CARBIDE TECHNOLOGYChang, K. / Witt, T. / Hoff, A. / Woodin, R. / Ridley, R. / Dolny, G. / Shanmugasundaram, K. / Oborina, E. / Ruzyllo, J. / Electrochemical Society et al. | 2006
- 234
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WAFER SURFACE CONTAMINATION REDUCTION FROM SILICON CARBIDE COMPONENTS AT ELEVATED TEMPERATURESRapoport, I. / Taylor, P. / Kim, S.-B. / Orschel, B. / Kearns, J. / Narendar, Y. / Electrochemical Society et al. | 2006
- 245
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REAL-TIME CHEMICAL MONITORING BY NIR SPECTROSCOPYBratin, P. / Shalyt, E. / Berkmans, J. / Hartman, I. / Shekel, Y. / Electrochemical Society et al. | 2006
- 251
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DETECTION AND MAPPING OF LOW LEVELS OF CONTAMINANTS ON Si WAFERS USING THE SCANNING CPDI TECHNIQUEYang, C. / Hawthorne, J. / Steele, B. / Deltoro, G. / Electrochemical Society et al. | 2006
- 259
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THE CHARACTERIZATION OF 65 nm PARTICLES ON POLISHED SILICON WAFERSBae, K.-M. / Kim, T.-W. / Lee, J.-P. / Binns, J. / Electrochemical Society et al. | 2006
- 267
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PARTICLE-SUBSTRATE INTERACTIONS IN NON-AQUEOUS MEDIA STUDIED BY COLLOIDAL PROBE AFMBarbagini, F. / Fyen, W. / Van Hoeymissen, J. / Mertens, P. / Fransaer, J. / Electrochemical Society et al. | 2006
- 277
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ION-IMPLANTED RESIST STRIPPING USING SUPERCRITICAL CARBON DIOXIDESaga, K. / Kuniyasu, H. / Hattori, T. / Korzenski, M. B. / Visintin, P. M. / Baum, T. H. / Electrochemical Society et al. | 2006
- 285
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CHEMICAL FORMULATIONS FOR STRIPPING POST-ETCH PHOTORESIST ON A LOW-k FILM IN SUPERCRITICAL CARBON DIOXIDEKorzenski, M. B. / Baum, T. H. / Saga, K. / Kuniyasu, H. / Hattori, T. / Electrochemical Society et al. | 2006
- 293
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REPAIR OF POROUS METHYL-SUBSTITUTED SILICON DIOXIDE FILMS USING SUPERCRITICAL CO~2Xie, B. / Muscat, A. J. / Electrochemical Society et al. | 2006
- 301
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SUPERCRITICAL CO~2 LOW-k DIELECTRIC REPAIRMalhouitre, S. / Van Hoeymissen, J. / Muscat, A. / Granger, P. / Mertens, P. / Electrochemical Society et al. | 2006
- 309
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INTERFACIAL LAYER FORMATION ON SILICON BY HALOGEN ACTIVATIONThorsness, A. G. / Muscat, A. J. / Electrochemical Society et al. | 2006
- 319
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EVALUATION OF THE DEGREE OF DAMAGE AFTER DIFFERENT CONDICTIONS OF He/H~2 STRIP PLASMA ON SILICA-BASED POROUS LOW-k MATERIALS - COMPATIBILITY STUDY WITH CHEMICAL SOLUTIONSKesters, E. / Le, Q. T. / Boullart, W. / Han, Q. / Berry, I. / Waldfried, C. / Mertens, P. W. / Heyns, M. M. / Electrochemical Society et al. | 2006
- 327
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A NOVEL SURFACE CLEANING FOR COPPER INTERCONNECTION USING ATOMIC HYDROGENIzumi, A. / Ueno, T. / Tsukinari, A. / Takada, A. / Electrochemical Society et al. | 2006
- 333
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THE EFFECTS OF pH ADJUSTORS IN POST Cu CMP CLEANING SOLUTIONS ON PARTICLE ADHESION AND REMOVALHong, Y.-K. / Song, J.-H. / Kang, Y.-J. / Kim, I.-K. / Park, J.-G. / Song, H.-S. / Kim, K.-S. / Myung, J.-J. / Lee, H.-J. / Song, S.-Y. et al. | 2006
- 341
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EFFECT OF CORROSION INHIBITOR, 1H-BENZOTRIAZOLE (BTAH) ON PARTICLE ADHESION IN Cu CMPSong, J.-H. / Hong, Y.-K. / Kim, T.-G. / Kang, Y.-J. / Kim, I.-K. / Han, J.-H. / Park, J.-G. / Busnaina, A. A. / Electrochemical Society et al. | 2006
- 349
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A NEW FAILURE MECHANISM BY TUNGSTEN BRIDGING IN A PLUG PROCESS DUE TO INCOMPLETE POST-METAL ETCH RESIDUE CLEAN CAUSING CORROSION AND TUNGSTEN RE-DEPOSITIONFlorence, D. / Williams, B. / Belisle, C. / Prasad, J. / Electrochemical Society et al. | 2006
- 357
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INVESTIGATION OF THE IMPACT OF BARRIER SLURRY PROPERTIES ON POST-CMP CLEANING EFFICIENCYPeters, D. / Bartosh, K. / Tran, C. / Watts, C. / Electrochemical Society et al. | 2006
- 365
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STUDY OF THE KINETICS OF THE COPPER CLEANING BY X-RAY REFLECTOMETRYRebiscoul, D. / Broussous, L. / Louis, D. / Passemard, G. / Electrochemical Society et al. | 2006