Growth of GaN Nano-Column on Si (111) Substrate Using Au+Ga Alloy Seeding by Pulsed Flow Method Using MOCVD (Englisch)
- Neue Suche nach: Song, J.C.
- Neue Suche nach: Kang, D.H.
- Neue Suche nach: Lee, S.H.
- Neue Suche nach: Jang, E.S.
- Neue Suche nach: Kim, D.W.
- Neue Suche nach: Santhakumar, K.
- Neue Suche nach: Lee, C.R.
- Neue Suche nach: Song, J.C.
- Neue Suche nach: Kang, D.H.
- Neue Suche nach: Lee, S.H.
- Neue Suche nach: Jang, E.S.
- Neue Suche nach: Kim, D.W.
- Neue Suche nach: Santhakumar, K.
- Neue Suche nach: Lee, C.R.
- Neue Suche nach: Chua, S.-J.
In:
Semiconductor photonics: nano-structured materials and devices
;
108-110
;
2008
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Growth of GaN Nano-Column on Si (111) Substrate Using Au+Ga Alloy Seeding by Pulsed Flow Method Using MOCVD
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Beteiligte:Song, J.C. ( Autor:in ) / Kang, D.H. ( Autor:in ) / Lee, S.H. ( Autor:in ) / Jang, E.S. ( Autor:in ) / Kim, D.W. ( Autor:in ) / Santhakumar, K. ( Autor:in ) / Lee, C.R. ( Autor:in ) / Chua, S.-J.
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Kongress:SYMPOSIUM D, Semiconductor photonics: nano-structured materials and devices ; 2007 ; Singapore
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Erschienen in:ADVANCED MATERIALS RESEARCH -ZUG- ; 31 ; 108-110
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich
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Erscheinungsdatum:01.01.2008
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Format / Umfang:3 pages
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Anmerkungen:Includes bibliographical references and index; Held as part of the International conference on materials for advanced technologies (ICMAT) 2007
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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