2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates (Englisch)
- Neue Suche nach: Tonisch, K.
- Neue Suche nach: Jatal, W.
- Neue Suche nach: Granzner, R.
- Neue Suche nach: Kittler, M.
- Neue Suche nach: Baumann, U.
- Neue Suche nach: Schwierz, F.
- Neue Suche nach: Pezoldt, J.
- Neue Suche nach: Tonisch, K.
- Neue Suche nach: Jatal, W.
- Neue Suche nach: Granzner, R.
- Neue Suche nach: Kittler, M.
- Neue Suche nach: Baumann, U.
- Neue Suche nach: Schwierz, F.
- Neue Suche nach: Pezoldt, J.
- Neue Suche nach: Bauer, Anton J.
In:
Silicon carbide and related materials 2009: selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009 /
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1219-1222
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2010
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates
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Beteiligte:Tonisch, K. ( Autor:in ) / Jatal, W. ( Autor:in ) / Granzner, R. ( Autor:in ) / Kittler, M. ( Autor:in ) / Baumann, U. ( Autor:in ) / Schwierz, F. ( Autor:in ) / Pezoldt, J. ( Autor:in ) / Bauer, Anton J.
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Kongress:13th, Silicon carbide and related materials 2009: selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009 / ; 2009 ; Nurnberg, Germany
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Erschienen in:MATERIALS SCIENCE FORUM ; 645-648 ; 1219-1222
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich, Switzerland , United Kingdom
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Erscheinungsdatum:01.01.2010
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Format / Umfang:4 pages
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Anmerkungen:"The 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009) was held in Nurnberg, Germany." -- p. [ix]. Includes bibliographical references and index. ICSCRM 2009.
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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High Quality 100mm 4H-SiC Substrates with Low ResistivityStraubinger, T.L. / Schmitt, E. / Storm, S. / Vogel, M. / Weber, A.D. / Wohlfart, A. et al. | 2010
- 9
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Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal QualityNakabayashi, M. / Fujimoto, T. / Katsuno, M. / Tsuge, H. / Aigo, T. / Satoh, S. / Yashiro, H. / Hoshino, T. / Hirano, H. / Ohashi, W. et al. | 2010
- 13
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High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based MeltDanno, K. / Saitoh, H. / Seki, A. / Daikoku, H. / Fujiwara, Y. / Ishii, T. / Sakamoto, H. / Kawai, Y. et al. | 2010
- 17
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Growth of 4H-SiC Crystals on the 8^o Off-Axis 6H-SiC Seed by PVT MethodTymicki, E. / Grasza, K. / Racka-Dzietko, K. / Raczkiewicz, M. / Lukasiewicz, T. / Gala, M. / Kosciewicz, K. / Diduszko, R. / Bozek, R. et al. | 2010
- 21
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Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed BacksideRacka-Dzietko, K. / Tymicki, E. / Grasza, K. / Raczkiewicz, M. / Jakiela, R. / Kozubal, M. / Jurkiewicz-Wegner, E. / Brzozowski, A. / Diduszko, R. / Piersa, M. et al. | 2010
- 25
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Status of 3" 6H SiC Bulk Crystal GrowthMakarov, Y.N. / Litvin, D.P. / Vasiliev, A.V. / Segal, A.S. / Nagalyuk, S.S. / Helava, H. / Voronova, M.I. / Scherbachov, K.D. et al. | 2010
- 29
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Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray DiffractionHock, R. / Konias, K. / Perdicaro, L. / Magerl, A. / Hens, P. / Wellmann, P.J. et al. | 2010
- 33
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Solution Growth and Crystallinity Characterization of Bulk 6H-SiCYashiro, N. / Kusunoki, K. / Kamei, K. / Yauchi, A. et al. | 2010
- 37
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Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT MethodYeo, I.G. / Lee, T.W. / Lee, W.J. / Shin, B.C. / Kim, I.S. / Choi, J.W. / Ku, K.R. / Kim, Y.H. / Nishino, S. et al. | 2010
- 41
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Purifying Mechanism in the Acheson Process - A Thermodynamic StudyZhou, L.Y. / Telle, R. et al. | 2010
- 45
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Growth of Single-Phase 2H-SiC Layers by Vapor-Liquid-Solid ProcessImade, M. / Takeuchi, S. / Uemura, M. / Yoshimura, M. / Kitaoka, Y. / Sasaki, T. / Mori, Y. / Itoh, S. / Okuda, H. / Yamazaki, M. et al. | 2010
- 49
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Overview of 3C-SiC Crystalline GrowthFerro, G. et al. | 2010
- 55
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Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT TechniqueGalben-Sandulache, I.G. / Sun, G.L. / Dedulle, J.M. / Ouisse, T. / Madar, R. / Pons, M. / Chaussende, D. et al. | 2010
- 59
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Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si MeltsMercier, F. / Galben-Sandulache, I.G. / Marinova, M. / Zoulis, G. / Ouisse, T. / Polychroniadis, E.K. / Chaussende, D. et al. | 2010
- 63
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Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC CrystalsSun, G.L. / Galben-Sandulache, I.G. / Ouisse, T. / Dedulle, J.M. / Pons, M. / Madar, R. / Chaussende, D. et al. | 2010
- 67
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Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?Mercier, F. / Kim-Hak, O. / Lorenzzi, J. / Dedulle, J.M. / Ferro, G. / Chaussende, D. et al. | 2010
- 71
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The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity beta -SiC Powder by the Sol-Gel MethodByeun, Y.K. / Telle, R. / Han, K.S. / Park, S.W. et al. | 2010
- 77
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Low-Pressure Fast Growth and Characterization of 4H-SiC EpilayersTsuchida, H. / Ito, M. / Kamata, I. / Nagano, M. / Miyazawa, T. / Hoshino, N. et al. | 2010
- 83
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Growth and Properties of SiC On-Axis Homoepitaxial LayersHassan, J. / Bergman, J.P. / Palisaitis, J. / Henry, A. / McNally, P.J. / Anderson, S. / Janzen, E. et al. | 2010
- 89
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High-Performance Multi-Wafer SiC Epitaxy - First Results of Using a 10x100mm ReactorHecht, C. / Stein, R.A. / Thomas, B. / Wehrhahn-Kilian, L. / Rosberg, J. / Kitahata, H. / Wischmeyer, F. et al. | 2010
- 95
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Concentrated Chloride-Based Epitaxial Growth of 4H-SiCHenry, A. / Leone, S. / Andersson, S. / Kordina, O. / Janzen, E. et al. | 2010
- 99
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4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face SubstrateKojima, K. / Ito, S. / Senzaki, J. / Okumura, H. et al. | 2010
- 103
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Epitaxial Growth of 4H-SiC with High Growth Rate Using CH~3Cl and SiCl~4 Chlorinated Growth PrecursorsKotamraju, S.P. / Krishnan, B. / Koshka, Y. et al. | 2010
- 107
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Chloride-Based CVD at High Growth Rates on 3'' Vicinal Off-Angles SiC WafersLeone, S. / Henry, A. / Kordina, O. / Janzen, E. et al. | 2010
- 111
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Use of SiCl~4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiCKotamraju, S.P. / Krishnan, B. / Melnychuk, G. / Koshka, Y. et al. | 2010
- 115
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Short-Length Step Morphology on 4^o Off Si-Face Epitaxial Surface Grown on 4H-SiC SubstrateMomose, K. / Odawara, M. / Tajima, Y. / Koizumi, H. / Muto, D. / Sato, T. et al. | 2010
- 119
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Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4^o Off-Axis SubstratesAigo, T. / Tsuge, H. / Yashiro, H. / Fujimoto, T. / Katsuno, M. / Nakabayashi, M. / Hoshino, T. / Ohashi, W. et al. | 2010
- 123
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Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial GrowthLee, K.Y. / Lee, S.Y. / Huang, C.F. et al. | 2010
- 127
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Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High TemperatureJegenyes, N. / Lorenzzi, J. / Souliere, V. / Dazord, J. / Cauwet, F. / Ferro, G. et al. | 2010
- 131
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The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow CathodeHuguenin-Love, J. / Lauer, N.T. / Soukup, R.J. / Ianno, N.J. / Kment, S. / Hubicka, Z. et al. | 2010
- 135
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3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)D Arrigo, G. / Severino, A. / Milazzo, G. / Bongiorno, C. / Piluso, N. / Abbondanza, G. / Mauceri, M. / Condorelli, G. / La Via, F. et al. | 2010
- 139
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SiC Epitaxial Growth on Si(100) Substrates Using Carbon TetrabromideAttolini, G. / Bosi, M. / Rossi, F. / Watts, B.E. / Salviati, G. / Battistig, G. / Dobos, L. / Pecz, B. et al. | 2010
- 143
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Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si SubstratesAnzalone, R. / Locke, C. / Carballo, J. / Piluso, N. / Severino, A. / D Arrigo, G. / Volinsky, A.A. / La Via, F. / Saddow, S.E. et al. | 2010
- 147
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Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using OrganosilaneSaito, E. / Filimonov, S. / Suemitsu, M. et al. | 2010
- 151
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Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)Hens, P. / Wagner, G. / Holzing, A. / Hock, R. / Wellmann, P.J. et al. | 2010
- 155
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Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon SubstratesPortail, M. / Chassagne, T. / Roy, S. / Moisson, C. / Zielinski, M. et al. | 2010
- 159
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Tuning Residual Stress in 3C-SiC(100) on Si(100)Pezoldt, J. / Stauden, T. / Niebelschutz, F. / Alsioufy, M.A. / Nader, R. / Masri, P.M. et al. | 2010
- 163
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Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid PhaseKim-Hak, O. / Lorenzzi, J. / Jegenyes, N. / Ferro, G. / Carole, D. / Chaudouet, P. / Dezellus, O. / Chaussende, D. / Viala, J.C. / Brylinski, C. et al. | 2010
- 167
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Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC FilmsSeverino, A. / Camarda, M. / Piluso, N. / Italia, M. / Condorelli, G. / Mauceri, M. / Abbondanza, G. / La Via, F. et al. | 2010
- 171
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Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC SubstratesLorenzzi, J. / Zoulis, G. / Kim-Hak, O. / Jegenyes, N. / Carole, D. / Cauwet, F. / Juillaguet, S. / Ferro, G. / Camassel, J. et al. | 2010
- 175
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Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC SeedsVasiliauskas, R. / Marinova, M. / Syvajarvi, M. / Mantzari, A. / Andreadou, A. / Lorenzzi, J. / Ferro, G. / Polychroniadis, E.K. / Yakimova, R. et al. | 2010
- 179
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Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation EpitaxyZoulis, G. / Sun, J.W. / Beshkova, M. / Vasiliauskas, R. / Juillaguet, S. / Peyre, H. / Syvajarvi, M. / Yakimova, R. / Camassel, J. et al. | 2010
- 183
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Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of SubstratesBeshkova, M. / Lorenzzi, J. / Jegenyes, N. / Birch, J. / Syvajarvi, M. / Ferro, G. / Yakimova, R. et al. | 2010
- 187
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SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor DepositionKrishnan, B. / Kotamraju, S.P. / Sundaresan, S.G. / Koshka, Y. et al. | 2010
- 193
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Identification of Defects Limiting the Carrier Lifetime in n^- Epitaxial Layers of 4H-SiCKlein, P.B. et al. | 2010
- 199
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Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC EpilayersHayashi, T. / Asano, K. / Suda, J. / Kimoto, T. et al. | 2010
- 203
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Temperature Dependence of the Carrier Lifetime in 4H-SiC EpilayersKlein, P.B. / Myers-Ward, R.L. / Lew, K.K. / VanMil, B.L. / Eddy, C.R. / Gaskill, D.K. / Shrivastava, A. / Sudarshan, T.S. et al. | 2010
- 207
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Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay MethodMatsushita, Y. / Kato, M. / Ichimura, M. / Hatayama, T. / Ohshima, T. et al. | 2010
- 211
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CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial LayersMaximenko, S.I. / Freitas, J.A. / Picard, Y.N. / Klein, P.B. / Myers-Ward, R.L. / Lew, K.K. / Muzykov, P.G. / Gaskill, D.K. / Eddy, C.R. / Sudarshan, T.S. et al. | 2010
- 215
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Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC CrystalsJarasiunas, K. / Scajev, P. / Gudelis, V. / Klein, P.B. / Kato, M. et al. | 2010
- 219
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On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC HeterostructuresKadys, A. / Scajev, P. / Manolis, G. / Gudelis, V. / Jarasiunas, K. / Abramov, P.L. / Lebedev, S.P. / Lebedev, A.A. et al. | 2010
- 223
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Increase of SiC Substrate Resistance Induced by AnnealingStraubinger, T.L. / Woodin, R.L. / Witt, T. / Shovlin, J. / Dolny, G.M. / Sasahara, P. / Schmitt, E. / Weber, A.D. / Casady, J.B. et al. | 2010
- 227
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Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiCNaretto, M. / Perrone, D. / Ferrero, S. / Scaltrito, L. et al. | 2010
- 231
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Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted TransitionsGrivickas, V. / Gulbinas, K. / Grivickas, P. / Manolis, G. / Linnros, J. et al. | 2010
- 235
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Electronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band MaterialsNisikawa, Y. et al. | 2010
- 239
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Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon CarbideTomita, T. / Iwami, M. / Yamamoto, M. / Deki, M. / Matsuo, S. / Hashimoto, S. / Nakagawa, Y. / Kitada, T. / Isu, T. / Saito, S. et al. | 2010
- 243
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Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC StructuresMochizuki, K. / Shimizu, H. / Yokoyama, N. et al. | 2010
- 247
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Calculation of Lattice Constant of 4H-SiC as a Function of Impurity ConcentrationMatsumoto, T. / Nishizawa, S. / Yamasaki, S. et al. | 2010
- 251
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Polytypism Study in SiC Epilayers Using Electron Backscatter DiffractionKosciewicz, K. / Strupinski, W. / Wierzchowski, W. / Wieteska, K. / Olszyna, A. et al. | 2010
- 255
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Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si RatiosPiluso, N. / Severino, A. / Camarda, M. / Anzalone, R. / Canino, A. / Condorelli, G. / Abbondanza, G. / La Via, F. et al. | 2010
- 259
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Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC HeterostructuresLebedev, A.A. / Abramov, P.L. / Bogdanova, E.V. / Davydov, S.Y. / Lebedev, S.P. / Nelson, D.K. / Oganesyan, G.A. / Razbirin, B.S. / Tregubova, A.S. et al. | 2010
- 263
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Determination of the Optical Bandgap of Thin Amorphous (SiC)~1~-~x(AlN)~x FilmsGuerra, J.A. / Winterstein, A. / Erlenbach, O. / Galvez, G. / De Zela, F. / Weingartner, R. / Winnacker, A. et al. | 2010
- 267
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Elastic Properties of Dense Organosilicate Glasses Dependent on the C/Si RatioKnaup, J.M. / Li, H. / Vlassak, J.J. / Kaxiras, E. et al. | 2010
- 271
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A Pictorial Tracking of Basal Plane Dislocations in SiC EpitaxyStahlbush, R.E. / Myers-Ward, R.L. / VanMil, B.L. / Gaskill, D.K. / Eddy, C.R. et al. | 2010
- 277
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On the Luminescence and Driving Force of Stacking Faults in 4H-SiCCaldwell, J.D. / Giles, A.J. / Stahlbush, R.E. / Ancona, M.G. / Glembocki, O.J. / Hobart, K.D. / Hull, B.A. / Liu, K.X. et al. | 2010
- 283
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Systematic First Principles Calculations of the Effects of Stacking Fault Defects on the 4H-SiC Band StructureCamarda, M. / Delugas, P. / Canino, A. / Severino, A. / Piluso, N. / La Magna, A. / La Via, F. et al. | 2010
- 287
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In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth RateFeng, G. / Suda, J. / Kimoto, T. et al. | 2010
- 291
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Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation DensityDudley, M. / Zhang, N. / Zhang, Y. / Raghothamachar, B. / Byrappa, S. / Choi, G. / Sanchez, E.K. / Hansen, D.M. / Drachev, R. / Loboda, M.J. et al. | 2010
- 295
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Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-EpitaxyDudley, M. / Zhang, N. / Zhang, Y. / Raghothamachar, B. / Sanchez, E.K. et al. | 2010
- 299
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Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiCKallinger, B. / Thomas, B. / Polster, S. / Berwian, P. / Friedrich, J. et al. | 2010
- 303
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Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in EpilayersKamata, I. / Nagano, M. / Tsuchida, H. et al. | 2010
- 307
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Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC EpilayersHassan, J. / Henry, A. / Bergman, J.P. et al. | 2010
- 311
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Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC SubstratesKatsuno, M. / Ohtani, N. / Nakabayashi, M. / Fujimoto, T. / Yashiro, H. / Tsuge, H. / Aigo, T. / Hoshino, T. / Hirano, H. / Ohashi, W. et al. | 2010
- 315
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Structure of Inclusions in 4^o Offcut 4H-SiC EpitaxyMahadik, N.A. / Stahlbush, R.E. / Qadri, S.B. / Glembocki, O.J. / Alexson, D.A. / Myers-Ward, R.L. / Tedesco, J.L. / Eddy, C.R. / Gaskill, D.K. et al. | 2010
- 319
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Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial LayersFujimoto, T. / Aigo, T. / Nakabayashi, M. / Satoh, S. / Katsuno, M. / Tsuge, H. / Yashiro, H. / Hirano, H. / Hoshino, T. / Ohashi, W. et al. | 2010
- 323
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Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal ProcessNagano, M. / Tsuchida, H. / Suzuki, T. / Hatakeyama, T. / Senzaki, J. / Fukuda, K. et al. | 2010
- 327
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Single Shockley Stacking Faults in As-Grown 4H-SiC EpilayersHassan, J. / Bergman, J.P. et al. | 2010
- 331
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Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS DiodesZhang, Q.C. / Agarwal, A. / Burk, A.A. / O Loughlin, M.J. / Palmour, J. / Stahlbush, R.E. / Scozzie, C. et al. | 2010
- 335
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Dislocation Activity in 4H-SiC in the Brittle DomainDemenet, J.L. / Amer, M. / Mussi, A. / Rabier, J. et al. | 2010
- 339
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Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiCKawahara, T. / Hatta, N. / Yagi, K. / Uchida, H. / Kobayashi, M. / Abe, M. / Nagasawa, H. / Zippelius, B. / Pensl, G. et al. | 2010
- 343
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Temperature-Dependence of the Leakage Current of 3C-SiC p^+-n Diodes Caused by Extended DefectsZippelius, B. / Krieger, M. / Weber, H.B. / Pensl, G. / Nagasawa, H. / Kawahara, T. / Hatta, N. / Yagi, K. / Uchida, H. / Kobayashi, M. et al. | 2010
- 347
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6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial LayersRobert, T. / Marinova, M. / Juillaguet, S. / Henry, A. / Polychroniadis, E.K. / Camassel, J. et al. | 2010
- 351
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Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial LayerIshikawa, Y. / Sugawara, Y. / Saitoh, H. / Danno, K. / Kawai, Y. / Shibata, N. / Hirayama, T. / Ikuhara, Y. et al. | 2010
- 355
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Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiCHirano, R. / Tajima, M. / Itoh, K.M. et al. | 2010
- 359
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Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC SubstratesWasyluk, J. / Perova, T.S. / Kukushkin, S.A. / Osipov, A.V. / Feoktistov, N.A. / Grudinkin, S.A. et al. | 2010
- 363
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Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution GrowthSeki, K. / Morimoto, K. / Ujihara, T. / Tokunaga, T. / Sasaki, K. / Kuroda, K. / Takeda, Y. et al. | 2010
- 367
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The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation EpitaxyMarinova, M. / Mantzari, A. / Beshkova, M. / Syvajarvi, M. / Yakimova, R. / Polychroniadis, E.K. et al. | 2010
- 371
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A Study of Structural Defects in 3C-SiC Hetero-Epitaxial FilmsSeverino, A. / Anzalone, R. / Bongiorno, C. / La Via, F. et al. | 2010
- 375
-
Macrodefects in Cubic Silicon Carbide CrystalsJokubavicius, V. / Palisaitis, J. / Vasiliauskas, R. / Yakimova, R. / Syvajarvi, M. et al. | 2010
- 379
-
Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron MicroscopyChayasombat, B. / Kimata, Y. / Kato, T. / Tokunaga, T. / Sasaki, K. / Kuroda, K. et al. | 2010
- 383
-
TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC SeedsMarinova, M. / Zoulis, G. / Robert, T. / Mercier, F. / Mantzari, A. / Galben-Sandulache, I.G. / Kim-Hak, O. / Lorenzzi, J. / Juillaguet, S. / Chaussende, D. et al. | 2010
- 387
-
TEM and SEM-CL Studies of SiC NanowiresRossi, F. / Fabbri, F. / Attolini, G. / Bosi, M. / Watts, B.E. / Salviati, G. et al. | 2010
- 391
-
Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping ConcentrationsKim, K.S. / Chung, G.S. et al. | 2010
- 395
-
Theory of Neutral Divacancy in SiC: A Defect for SpintronicsGali, A. / Gallstrom, A. / Son, N.T. / Janzen, E. et al. | 2010
- 399
-
The Carbon Vacancy Related EI4 Defect in 4H-SiCSon, N.T. / Carlsson, P. / Isoya, J. / Morishita, N. / Ohshima, T. / Magnusson, B. / Janzen, E. et al. | 2010
- 403
-
Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiCScholle, A. / Greulich-Weber, S. / Rauls, E. / Schmidt, W.G. / Gerstmann, U. et al. | 2010
- 407
-
The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron IrradiationSteeds, J.W. et al. | 2010
- 411
-
New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ^4He Ion Irradiated 4H SiCYan, F. / Devaty, R.P. / Choyke, W.J. / Kimoto, T. / Ohshima, T. / Pensl, G. / Gali, A. et al. | 2010
- 415
-
LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC SubstratesSun, J.W. / Zoulis, G. / Lorenzzi, J. / Jegenyes, N. / Juillaguet, S. / Peyre, H. / Souliere, V. / Ferro, G. / Milesi, F. / Camassel, J. et al. | 2010
- 419
-
Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV ElectronsYan, F. / Devaty, R.P. / Choyke, W.J. / Danno, K. / Alfieri, G. / Kimoto, T. / Onoda, S. / Ohshima, T. / Reshanov, S.A. / Beljakowa, S. et al. | 2010
- 423
-
Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy ElectronsReshanov, S.A. / Beljakowa, S. / Zippelius, B. / Pensl, G. / Danno, K. / Alfieri, G. / Kimoto, T. / Onoda, S. / Ohshima, T. / Yan, F. et al. | 2010
- 427
-
Shallow Defects Observed in As-Grown and Electron-Irradiated or He^+-Implanted Al-Doped 4H-SiC EpilayersBeljakowa, S. / Reshanov, S.A. / Zippelius, B. / Krieger, M. / Pensl, G. / Danno, K. / Kimoto, T. / Onoda, S. / Ohshima, T. / Yan, F. et al. | 2010
- 431
-
A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam IrradiationLovlie, L. / Vines, L. / Svensson, B.G. et al. | 2010
- 435
-
Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiCBeyer, F.C. / Hemmingsson, C. / Pedersen, H. / Henry, A. / Isoya, J. / Morishita, N. / Ohshima, T. / Janzen, E. et al. | 2010
- 439
-
Deep Defects in 3C-SiC Generated by H^+- and He^+-Implantation or by Irradiation with High-Energy ElectronsWeidner, M. / Trapaidze, L. / Pensl, G. / Reshanov, S.A. / Schoner, A. / Itoh, H. / Ohshima, T. / Kimoto, T. et al. | 2010
- 443
-
Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence TechniquesManolis, G. / Zoulis, G. / Juillaguet, S. / Lorenzzi, J. / Ferro, G. / Camassel, J. / Jarasiunas, K. et al. | 2010
- 447
-
Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin ScatteringDevaty, R.P. / Clouter, M.J. / Ke, Y. / Choyke, W.J. et al. | 2010
- 451
-
Breakdown of Impurity Al in SiC PolytypesSankin, V.I. / Averkiev, N.S. / Monakhov, A.M. / Shkrebiy, P.P. / Lepneva, A.A. / Ostroumov, A.G. / Abramov, P.L. / Bogdanova, E.V. / Lebedev, S.P. / Strelchuk, A.M. et al. | 2010
- 455
-
Deep Levels Observed in High-Purity Semi-Insulating 4H-SiCAlfieri, G. / Kimoto, T. / Pensl, G. et al. | 2010
- 459
-
Thermal Activation and Cathodoluminescence Measurements of Tb^3^+-Doped a-(SiC)~1~-~x(AlN)~x Thin FilmsErlenbach, O. / Galvez, G. / Guerra, J.A. / De Zela, F. / Weingartner, R. / Winnacker, A. et al. | 2010
- 463
-
Detection and Electrical Characterization of Defects at the SiO~2/4H-SiC InterfaceKrieger, M. / Beljakowa, S. / Zippelius, B. / Afanas ev, V.V. / Bauer, A.J. / Nanen, Y. / Kimoto, T. / Pensl, G. et al. | 2010
- 469
-
Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray IrradiationTadjer, M.J. / Hobart, K.D. / Stahlbush, R.E. / McMarr, P.J. / Hughes, H.L. / Kub, F.J. / Haney, S.K. et al. | 2010
- 473
-
SiC and GaN MOS Interfaces - Similarities and DifferencesChow, T.P. et al. | 2010
- 479
-
Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO~2 InterfaceChatterjee, A. / Matocha, K. / Tilak, V. / Fronheiser, J.A. / Piao, H. et al. | 2010
- 483
-
Dynamical Simulations of Dry Oxidation and NO Annealing of SiO~2/4H-SiC Interface on C-Face at 1500K: From First PrinciplesOhnuma, T. / Miyashita, A. / Yoshikawa, M. / Tsuchida, H. et al. | 2010
- 487
-
Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETsNanen, Y. / Zippelius, B. / Beljakowa, S. / Trapaidze, L. / Krieger, M. / Kimoto, T. / Pensl, G. et al. | 2010
- 491
-
Nitridation of the SiO~2/SiC Interface by N^+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETsMoscatelli, F. / Poggi, A. / Solmi, S. / Nipoti, R. / Armigliato, A. / Belsito, L. et al. | 2010
- 495
-
Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted SubstratesOkamoto, D. / Yano, H. / Hatayama, T. / Fuyuki, T. et al. | 2010
- 499
-
Effect of NO Annealing on 6H- and 4H-SiC MOS Interface StatesBasile, A.F. / Rozen, J. / Chen, X.D. / Dhar, S. / Williams, J.R. / Feldman, L.C. / Mooney, P.M. et al. | 2010
- 503
-
Significant Decrease of the Interface State Density by NH~3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond ConfigurationIwasaki, Y. / Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. et al. | 2010
- 507
-
Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) SurfacesKagei, Y. / Kirino, T. / Watanabe, Y. / Mitani, S. / Nakano, Y. / Nakamura, T. / Hosoi, T. / Shimura, T. / Watanabe, H. et al. | 2010
- 511
-
Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate OxideMoon, J.H. / Yim, J.H. / Seo, H.S. / Kim, C.H. / Lee, D.H. / Cheong, K.Y. / Bahng, W. / Kim, N.K. / Kim, H.J. et al. | 2010
- 515
-
Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric OxideOkamoto, D. / Yano, H. / Oshiro, Y. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. et al. | 2010
- 519
-
Experimental Identification of Extra Type of Charges at SiO~2/SiC Interface in 4H-SiCNaik, H. / Li, Z. / Chow, T.P. et al. | 2010
- 523
-
A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS StructuresGutt, T. / Przewlocki, H.M. / Bakowski, M. et al. | 2010
- 527
-
EDMR and EPR Studies of 4H SiC MOSFETs and CapacitorsCochrane, C.J. / Bittel, B.C. / Lenahan, P.M. / Fronheiser, J.A. / Matocha, K. / Lelis, A.J. et al. | 2010
- 531
-
Electrical Properties and Gas Sensing Characteristics of the Al~2O~3/4H SiC Interface Studied by Impedance SpectroscopySobas, P.A. / Nilsen, O. / Fjellvag, H. / Svensson, B.G. et al. | 2010
- 535
-
Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)Takatsuka, A. / Tanaka, Y. / Yano, K. / Yatsuo, T. / Arai, K. et al. | 2010
- 539
-
Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface KineticsCamarda, M. / La Magna, A. / Canino, A. / La Via, F. et al. | 2010
- 543
-
Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) SurfacesIshida, Y. / Takahashi, T. / Okumura, H. / Arai, K. / Yoshida, S. et al. | 2010
- 547
-
Modal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant FrequencyKazantsev, D. et al. | 2010
- 551
-
Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman SpectroscopyYamaguchi, M. / Fujitsuka, M. / Ueno, S. / Miura, I. / Erikawa, W. / Tomita, T. et al. | 2010
- 555
-
Single Shockley Faults Enlargement during Micro-Photoluminescence Defects MappingCanino, A. / Camarda, M. / La Via, F. et al. | 2010
- 559
-
Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging CameraLee, K.Y. / Miyazaki, H. / Okamoto, Y. / Morimoto, J. et al. | 2010
- 565
-
Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC SubstratesYakimova, R. / Virojanadara, C. / Gogova, D. / Syvajarvi, M. / Siche, D. / Larsson, K. / Johansson, L.I. et al. | 2010
- 569
-
Growth Rate and Thickness Uniformity of Epitaxial GrapheneStrupinski, W. / Drabinska, A. / Bozek, R. / Borysiuk, J. / Wysmolek, A. / Stepniewski, R. / Kosciewicz, K. / Caban, P. / Korona, K. / Grodecki, K. et al. | 2010
- 573
-
Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric PressureBoeckl, J. / Mitchel, W.C. / Clarke, E. / Barbosa, R.L. / Lu, W.J. et al. | 2010
- 577
-
Graphene Growth on C and Si-Face of 4H-SiC - TEM and AFM StudiesBorysiuk, J. / Bozek, R. / Strupinski, W. / Baranowski, J.M. et al. | 2010
- 581
-
Differences between Graphene Grown on Si-Face and C-FaceCamara, N. / Caboni, A. / Huntzinger, J.R. / Tiberj, A. / Mestres, N. / Godignon, P. / Camassel, J. et al. | 2010
- 585
-
Epitaxial Graphene Elaborated on 3C-SiC(111)/Si EpilayersOuerghi, A. / Portail, M. / Kahouli, A. / Travers, L. / Chassagne, T. / Zielinski, M. et al. | 2010
- 589
-
Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with CarbonVassilevski, K. / Nikitina, I.P. / Horsfall, A.B. / Wright, N.G. / Johnson, C.M. et al. | 2010
- 593
-
Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon EvaporationAl-Temimy, A. / Riedl, C. / Starke, U. et al. | 2010
- 597
-
Epitaxial Graphene Growth Studied by Low-Energy Electron Microscopy and First-PrinciplesKageshima, H. / Hibino, H. / Nagase, M. et al. | 2010
- 603
-
Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman SpectroscopyRohrl, J. / Hundhausen, M. / Speck, F. / Seyller, T. et al. | 2010
- 607
-
Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current MappingSonde, S. / Giannazzo, F. / Huntzinger, J.R. / Tiberj, A. / Syvajarvi, M. / Yakimova, R. / Raineri, V. / Camassel, J. et al. | 2010
- 611
-
Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC SubstratesKamoi, S. / Hasuike, N. / Kisoda, K. / Harima, H. / Morita, K. / Tanaka, S. / Hashimoto, A. et al. | 2010
- 615
-
Optical Transmission of Epitaxial Graphene Layers on SiC in the Visible Spectral RangeDrabinska, A. / Borysiuk, J. / Strupinski, W. / Baranowski, J.M. et al. | 2010
- 619
-
Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H SurfaceGoss, J.P. / Briddon, P.R. / Wright, N.G. / Horsfall, A.B. et al. | 2010
- 623
-
Hydrogen Intercalation below Epitaxial Graphene on SiC(0001)Riedl, C. / Coletti, C. / Iwasaki, T. / Starke, U. et al. | 2010
- 629
-
Quasi-Freestanding Graphene on SiC(0001)Speck, F. / Ostler, M. / Rohrl, J. / Jobst, J. / Waldmann, D. / Hundhausen, M. / Ley, L. / Weber, H.B. / Seyller, T. et al. | 2010
- 633
-
Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary SubstratesCaldwell, J.D. / Anderson, T.J. / Hobart, K.D. / Culbertson, J.C. / Jernigan, G.G. / Kub, F.J. / Tedesco, J.L. / Hite, J.K. / Mastro, M.A. / Myers-Ward, R.L. et al. | 2010
- 637
-
Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)Jobst, J. / Waldmann, D. / Emtsev, K.V. / Seyller, T. / Weber, H.B. et al. | 2010
- 645
-
Defect Control in Growth and Processing of 4H-SiC for Power Device ApplicationsKimoto, T. / Feng, G. / Hiyoshi, T. / Kawahara, K. / Noborio, M. / Suda, J. et al. | 2010
- 651
-
Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiCKawahara, K. / Alfieri, G. / Hiyoshi, T. / Pensl, G. / Kimoto, T. et al. | 2010
- 655
-
Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETsFukuda, K. / Kinoshita, A. / Ohyanagi, T. / Kosugi, R. / Sakata, T. / Sakuma, Y. / Senzaki, J. / Minami, A. / Shimozato, A. / Suzuki, T. et al. | 2010
- 661
-
Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTsGhandi, R. / Domeij, M. / Esteve, R. / Buono, B. / Schoner, A. / Han, J.S. / Dimitrijev, S. / Reshanov, S.A. / Zetterling, C.M. / Ostling, M. et al. | 2010
- 665
-
Novel Fabrication Technology for Devices with nearly Temperature-Independent Forward CharacteristicsHeim, S. / Albrecht, A. / Bartsch, W. et al. | 2010
- 669
-
Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiCKato, M. / Ono, H. / Ichimura, M. et al. | 2010
- 673
-
Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad MetallizationsHilsenbeck, J. / Treu, M. / Rupp, R. / Ruschenschmidt, K. / Kern, R. / Holz, M. et al. | 2010
- 677
-
On the Viability of Au/3C-SiC Schottky Barrier DiodesEriksson, J. / Weng, M.H. / Roccaforte, F. / Giannazzo, F. / Di Franco, S. / Leone, S. / Raineri, V. et al. | 2010
- 681
-
Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate OxidesGrieb, M. / Noborio, M. / Peters, D. / Bauer, A.J. / Friedrichs, P. / Kimoto, T. / Ryssel, H. et al. | 2010
- 685
-
Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation AnnealingSenzaki, J. / Suzuki, T. / Shimozato, A. / Fukuda, K. / Arai, K. / Okumura, H. et al. | 2010
- 689
-
Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC StructuresStedile, F.C. / Correa, S.A. / Radtke, C. / Miotti, L. / Baumvol, I.J.R. / Soares, G.V. / Kong, F. / Han, J.S. / Hold, L. / Dimitrijev, S. et al. | 2010
- 693
-
The Limits of Post Oxidation Annealing in NORozen, J. / Zhu, X.G. / Ahyi, A.C. / Williams, J.R. / Feldman, L.C. et al. | 2010
- 697
-
Electrical Activation of B^+-Ions Implanted into 4H-SiCTsirimpis, T. / Krieger, M. / Weber, H.B. / Pensl, G. et al. | 2010
- 701
-
Manganese in 4H-SiCLinnarsson, M.K. / Audren, A. / Hallen, A. et al. | 2010
- 705
-
Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiCWatanabe, T. / Aya, S. / Hattori, R. / Imaizumi, M. / Oomori, T. et al. | 2010
- 709
-
Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap SemiconductorsRao, M.V. / Tian, Y.L. / Qadri, S.B. / Freitas, J.A. / Nipoti, R. et al. | 2010
- 713
-
Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiCWeng, M.H. / Roccaforte, F. / Giannazzo, F. / Di Franco, S. / Bongiorno, C. / Saggio, M. / Raineri, V. et al. | 2010
- 717
-
Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial SamplesOttaviani, L. / Biondo, S. / Morata, S. / Palais, O. / Sauvage, T. / Torregrosa, F. et al. | 2010
- 721
-
Effects of Helium Implantation on the Mechanical Properties of 4H-SiCBarbot, J.F. / Beaufort, M.F. / Audurier, V. et al. | 2010
- 725
-
Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma AshingHirono, S. / Torii, H. / Tajima, T. / Amazawa, T. / Umemura, S. / Kamata, T. / Hirabayashi, Y. et al. | 2010
- 729
-
TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiCTsao, B.H. / Lawson, J.W. / Scofield, J.D. / Baca, J.F. et al. | 2010
- 733
-
Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond FilmsTadjer, M.J. / Anderson, T.J. / Hobart, K.D. / Feygelson, T.I. / Butler, J.E. / Kub, F.J. et al. | 2010
- 737
-
Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion BarriersKuchuk, A.V. / Guziewicz, M. / Ratajczak, R. / Wzorek, M. / Kladko, V.P. / Piotrowska, A. et al. | 2010
- 741
-
SiC-Die-Attachment for High Temperature ApplicationsHeuck, N. / Palm, G. / Sauerberg, T. / Stranz, A. / Waag, A. / Bakin, A. et al. | 2010
- 745
-
Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature ApplicationsGuziewicz, M. / Kisiel, R. / Golaszewska, K. / Wzorek, M. / Stonert, A. / Piotrowska, A. / Szmidt, J. et al. | 2010
- 749
-
Development of a Wire-Bond Technology for SiC High Temperature ApplicationsHeuck, N. / Baars, F. / Bakin, A. / Waag, A. et al. | 2010
- 753
-
Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap MaterialsZielinski, M. / Moisson, C. / Monnoye, S. / Mank, H. / Chassagne, T. / Roy, S. / Bazin, A.E. / Michaud, J.F. / Portail, M. et al. | 2010
- 759
-
Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiCKawahara, K. / Alfieri, G. / Krieger, M. / Kimoto, T. et al. | 2010
- 763
-
Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing TechniqueKato, T. / Kinoshita, A. / Wada, K. / Nishi, T. / Hozomi, E. / Taniguchi, H. / Fukuda, K. / Okumura, H. et al. | 2010
- 767
-
Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe MicroscopyLebedev, S.P. / Dement ev, P.A. / Lebedev, A.A. / Petrov, V.N. / Titkov, A.N. et al. | 2010
- 771
-
Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl~2-O~2-SiC SystemHatayama, T. / Koketsu, H. / Yano, H. / Fuyuki, T. et al. | 2010
- 775
-
Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred EtchingOkamoto, T. / Sano, Y. / Hara, H. / Hatayama, T. / Arima, K. / Yagi, K. / Murata, J. / Sadakuni, S. / Tachibana, K. / Shirasawa, Y. et al. | 2010
- 779
-
Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based AmbienceKoketsu, H. / Hatayama, T. / Amijima, K. / Yano, H. / Fuyuki, T. et al. | 2010
- 783
-
Impact of CF~4 Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature AnnealingSugimoto, T. / Satoh, M. / Nakamura, T. / Mashimo, K. / Doi, H. / Shibagaki, M. et al. | 2010
- 787
-
4H-SiC Surface Morphology Etched Using ClF~3 GasHabuka, H. / Tanaka, K. / Katsumi, Y. / Takechi, N. / Fukae, K. / Kato, T. et al. | 2010
- 791
-
Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICsOkamoto, N. / Imanishi, K. / Kikkawa, T. / Nara, N. et al. | 2010
- 795
-
Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium NitrideSadakuni, S. / Murata, J. / Yagi, K. / Sano, Y. / Arima, K. / Hattori, A. / Okamoto, T. / Yamauchi, K. et al. | 2010
- 799
-
Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiCHatakeyama, T. / Suzuki, T. / Ichinoseki, K. / Matsuhata, H. / Fukuda, K. / Shinohe, T. / Arai, K. et al. | 2010
- 805
-
Gate Oxide Long-Term Reliability of 4H-SiC MOS DevicesYu, L.C. / Cheung, K.P. / Dunne, G. / Matocha, K. / Suehle, J.S. / Sheng, K. et al. | 2010
- 809
-
Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission ModelHijikata, Y. / Yaguchi, H. / Yoshida, S. et al. | 2010
- 813
-
In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-PressuresKouda, K. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. et al. | 2010
- 817
-
Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP StepsConstant, A. / Camara, N. / Godignon, P. / Berthou, M. / Camassel, J. / Decams, J.M. et al. | 2010
- 821
-
Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force MicroscopyKozono, K. / Hosoi, T. / Kagei, Y. / Kirino, T. / Mitani, S. / Nakano, Y. / Nakamura, T. / Shimura, T. / Watanabe, H. et al. | 2010
- 825
-
Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS DevicesNoborio, M. / Grieb, M. / Bauer, A.J. / Peters, D. / Friedrichs, P. / Suda, J. / Kimoto, T. et al. | 2010
- 829
-
Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiCEsteve, R. / Schoner, A. / Reshanov, S.A. / Zetterling, C.M. et al. | 2010
- 833
-
Reliability of Thin Thermally Grown SiO~2 on 3C-SiC Studied by Scanning Probe MicroscopyEriksson, J. / Weng, M.H. / Roccaforte, F. / Giannazzo, F. / Fiorenza, P. / Lorenzzi, J. / Ferro, G. / Raineri, V. et al. | 2010
- 837
-
Effects of Post-Deposition Annealing on CeO~2 Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiCLim, W.F. / Cheong, K.Y. / Lockman, Z. / Jasni, F.A. / Quah, H.J. et al. | 2010
- 841
-
Nanostructuring Techniques for 3C-SiC(100) NEMS StructuresHofer, M. / Stauden, T. / Rangelow, I.W. / Pezoldt, J. et al. | 2010
- 845
-
SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh EnvironmentPlacidi, M. / Perez-Tomas, A. / Godignon, P. / Mestres, N. / Abadal, G. / Chassagne, T. / Zielinski, M. et al. | 2010
- 849
-
Temperature Facilitated ECR-Etching for Isotropic SiC StructuringNiebelschutz, F. / Stauden, T. / Tonisch, K. / Pezoldt, J. et al. | 2010
- 853
-
Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiCChoyke, W.J. / D Urso, B. / Yan, F. / Devaty, R.P. et al. | 2010
- 857
-
Thinning of SiC Wafer by Plasma Chemical Vaporization MachiningSano, Y. / Kato, T. / Hori, T. / Yamamura, K. / Mimura, H. / Katsuyama, Y. / Yamauchi, K. et al. | 2010
- 861
-
Property Modification of 3C-SiC MEMS on Ge-Modified Si(100) SubstratesNiebelschutz, F. / Zhao, W.H. / Brueckner, K. / Tonisch, K. / Linss, M. / Hein, M.A. / Pezoldt, J. et al. | 2010
- 865
-
Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal CantileversAnzalone, R. / Camarda, M. / Alquier, D. / Italia, M. / Severino, A. / Piluso, N. / La Magna, A. / Foti, G. / Locke, C. / Saddow, S.E. et al. | 2010
- 869
-
Electric Discharge Machining for Silicon Carbide in Gases of Ar, Ar-CH~4 and Ar-CF~4 MixturesSugimoto, T. / Noro, T. / Yamaguchi, S. / Majima, H. / Kato, T. et al. | 2010
- 873
-
Effect of In Situ Doped Nitrogen Concentrations on the Characteristics of Poly 3C-SiC Micro ResonatorsChung, G.S. / Yoon, K.H. et al. | 2010
- 879
-
Active Devices for Power Electronics: SiC vs III-N Compounds - The Case of Schottky RectifiersBrylinski, C. / Menard, O. / Thierry-Jebali, N. / Cayrel, F. / Alquier, D. et al. | 2010
- 885
-
A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive LossesRupp, R. / Bjork, F. / Deboy, G. / Holz, M. / Treu, M. / Hilsenbeck, J. / Otremba, R. / Zeichen, H. et al. | 2010
- 889
-
Germanium - Silicon Carbide Heterojunction Diodes - A Study in Device Characteristics with Increasing Layer Thickness and Deposition TemperatureGammon, P.M. / Perez-Tomas, A. / Jennings, M.R. / Roberts, G.J. / Shah, V.A. / Covington, J.A. / Mawby, P.A. et al. | 2010
- 893
-
Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier HeightKinoshita, A. / Ohyanagi, T. / Yatsuo, T. / Fukuda, K. / Okumura, H. / Arai, K. et al. | 2010
- 897
-
4.6 kV, 10.5 mOhmxcm^2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial WafersVassilevski, K. / Nikitina, I.P. / Horsfall, A.B. / Wright, N.G. / Johnson, C.M. et al. | 2010
- 901
-
6.5 kV SiC PiN Diodes with Improved Forward CharacteristicsPeters, D. / Bartsch, W. / Thomas, B. / Sommer, R. et al. | 2010
- 905
-
Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN DiodesChung, G.Y. / Loboda, M.J. / Sundaresan, S.G. / Singh, R. et al. | 2010
- 909
-
Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown PerformanceBartsch, W. / Schoerner, R. / Dohnke, K.O. et al. | 2010
- 913
-
Analyses of High Leakage Currents in Al^+ Implanted 4H SiC pn Diodes Caused by Threading Screw DislocationsTsuji, T. / Tawara, T. / Tanuma, R. / Yonezawa, Y. / Iwamuro, N. / Kosaka, K. / Yurimoto, H. / Kobayashi, S. / Matsuhata, H. / Fukuda, K. et al. | 2010
- 917
-
Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI SubstrateVergne, B. / Scharnholz, S. / Konrath, J.P. / Couderc, V. / Leveque, P. / Spahn, E. et al. | 2010
- 921
-
Charge Collection Efficiency of 6H-SiC P^+N Diodes Degraded by Low-Energy Electron IrradiationIwamoto, N. / Onoda, S. / Ohshima, T. / Kojima, K. / Koizumi, A. / Uchida, K. / Nozaki, S. et al. | 2010
- 925
-
4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth MethodKrishnan, B. / Merrett, N. / Melnychuk, G. / Koshka, Y. et al. | 2010
- 929
-
Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and SimulationsVeliadis, V. / Hearne, H. / Stewart, E.J. / Howell, R. / Lelis, A.J. / Scozzie, C. et al. | 2010
- 933
-
Fast Switching with SiC VJFETs - Influence of the Device TopologyElpelt, R. / Friedrichs, P. / Biela, J. et al. | 2010
- 937
-
Performance of 15 mm^2 1200 V Normally-Off SiC VJFETs with 120 A Saturation CurrentRitenour, A. / Sheridan, D.C. / Bondarenko, V. / Casady, J.B. et al. | 2010
- 941
-
Radiation Hardness Evaluation of SiC-BGSITTanaka, Y. / Onoda, S. / Takatsuka, A. / Ohshima, T. / Yatsuo, T. et al. | 2010
- 945
-
Physics of Hysteresis in MESFET Drain I-V Characteristics: Simulation ApproachAdjaye, J. / Mazzola, M.S. et al. | 2010
- 949
-
Characterization of SiC JFETs and its Application in Extreme Temperature (over 450^oC) Circuit DesignYang, J. / Fraley, J. / Western, B. / Schupbach, M. / Lostetter, A. et al. | 2010
- 953
-
Amplitude Shift Keyed Radio Communications for Hostile EnvironmentsBrennan, D.R. / Miao, B. / Vassilevski, K. / Wright, N.G. / Horsfall, A.B. et al. | 2010
- 957
-
Minimization of Drain-to-Gate Interaction in a SiC JFET Inverter Using an External Gate-Source CapacitorBerry, O. / Hamieh, Y. / Rael, S. / Meibody-Tabar, F. / Vieillard, S. / Bergogne, D. / Morel, H. et al. | 2010
- 961
-
Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250^oCLim, J.K. / Bakowski, M. / Nee, H.P. et al. | 2010
- 965
-
Circuit Modeling of Vertical Buried-Grid SiC JFETsTolstoy, G. / Peftitsis, D. / Lim, J.K. / Bakowski, M. / Nee, H.P. et al. | 2010
- 969
-
Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETsRyu, S.H. / Hull, B.A. / Dhar, S. / Cheng, L. / Zhang, Q.C. / Richmond, J. / Das, M.K. / Agarwal, A. / Palmour, J. / Lelis, A.J. et al. | 2010
- 975
-
Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETsPotbhare, S. / Akturk, A. / Goldsman, N. / Lelis, A.J. / Dhar, S. / Agarwal, A. et al. | 2010
- 979
-
Wafer-Level Hall Measurement on SiC MOSFETYu, L.C. / Cheung, K.P. / Tilak, V. / Dunne, G. / Matocha, K. / Campbell, J. / Suehle, J.S. / Sheng, K. et al. | 2010
- 983
-
Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V CharacteristicsLelis, A.J. / Green, R. / Habersat, D.B. / Goldsman, N. et al. | 2010
- 987
-
1360 V, 5.0 m Omega cm^2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)Kono, H. / Suzuki, T. / Mizukami, M. / Ota, C. / Harada, S. / Senzaki, J. / Fukuda, K. / Shinohe, T. et al. | 2010
- 991
-
Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO~2 Stacked Gate DielectricsHosoi, T. / Kagei, Y. / Kirino, T. / Watanabe, Y. / Kozono, K. / Mitani, S. / Nakano, Y. / Nakamura, T. / Watanabe, H. et al. | 2010
- 995
-
Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS DevicesOkamoto, M. / Iijima, M. / Yatsuo, T. / Fukuda, K. / Okumura, H. et al. | 2010
- 999
-
Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-AngleHarada, S. / Ito, S. / Kato, M. / Takatsuka, A. / Kojima, K. / Fukuda, K. / Okumura, H. et al. | 2010
- 1005
-
Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETsTilak, V. / Matocha, K. / Dunne, G. et al. | 2010
- 1009
-
Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating LayerTanehira, T. / Nakano, T. / Nakao, M. et al. | 2010
- 1013
-
Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion IrradiationLee, K.K. / Laird, J.S. / Ohshima, T. / Onoda, S. / Hirao, T. / Itoh, H. et al. | 2010
- 1017
-
9 kV, 1 cm^2 SiC Gate Turn-Off ThyristorsAgarwal, A. / Zhang, Q.C. / Callanan, R. / Capell, C. / Burk, A.A. / O Loughlin, M.J. / Palmour, J. / Temple, V. / Stahlbush, R.E. / Caldwell, J.D. et al. | 2010
- 1021
-
Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate DesignsSundaresan, S.G. / Issa, H. / Veereddy, D. / Singh, R. et al. | 2010
- 1025
-
10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiCZhang, Q.C. / Callanan, R. / Agarwal, A. / Burk, A.A. / O Loughlin, M.J. / Palmour, J. / Scozzie, C. et al. | 2010
- 1029
-
SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap EmitterMiyake, H. / Kimoto, T. / Suda, J. et al. | 2010
- 1033
-
2.2 kV SiC BJTs with Low V~C~E~S~A~T Fast Switching and Short-Circuit CapabilityDomeij, M. / Zaring, C. / Konstantinov, A.O. / Nawaz, M. / Svedberg, J.O. / Gumaelius, K. / Keri, I. / Lindgren, A. / Hammarlund, B. / Ostling, M. et al. | 2010
- 1037
-
Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and ElectroluminescenceFarese, L. / Malm, G. / Domeij, M. / Ostling, M. et al. | 2010
- 1041
-
Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar DevicesWerber, D. / Aigner, M. / Wachutka, G. et al. | 2010
- 1045
-
A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of V~F, Current Saturation Capability and Fast Switching SpeedZhang, Q.C. / Richmond, J. / Capell, C. / Agarwal, A. / Palmour, J. / O Brian, H. / Scozzie, C. et al. | 2010
- 1049
-
Fast Switch-Off of High Voltage 4H-SiC npn BJTs from Deep Saturation ModeIvanov, P.A. / Levinshtein, M.E. / Palmour, J. / Agarwal, A. / Zhang, J. et al. | 2010
- 1053
-
3kV 4H-SiC Thyristors for Pulsed Power ApplicationsElasser, A. / Losee, P.A. / Arthur, S. / Stum, Z. / Matocha, K. / Dunne, G. / Garrett, J.L. / Schutten, M. / Brown, D. et al. | 2010
- 1057
-
Operation of Silicon Carbide BJTs Free from Bipolar DegradationKonstantinov, A.O. / Domeij, M. / Zaring, C. / Keri, I. / Svedberg, J.O. / Gumaelius, K. / Ostling, M. / Reimark, M. et al. | 2010
- 1061
-
Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTsBuono, B. / Ghandi, R. / Domeij, M. / Malm, G. / Zetterling, C.M. / Ostling, M. et al. | 2010
- 1065
-
Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJTTajima, T. / Nakamura, T. / Watabe, Y. / Satoh, M. et al. | 2010
- 1069
-
Performance of Silicon Carbide Avalanche Photodiode Arrays and PhotomultipliersVert, A.V. / Soloviev, S.I. / Sandvik, P.M. et al. | 2010
- 1073
-
Optical Properties of Antireflective Subwavelength Structures on 4H-SiC for UV PhotodetectorsHirabayashi, Y. / Kaneko, S. / Akiyama, K. / Yasui, M. / Sakurazawa, K. et al. | 2010
- 1077
-
Impact Ionization in 4H-SiC Nuclear Radiation DetectorsIvanov, A.M. / Mynbaeva, M.G. / Sadokhin, A.V. / Strokan, N.B. / Lebedev, A.A. et al. | 2010
- 1081
-
Characterisation of Low Noise 4H-SiC Avalanche PhotodiodesGreen, J.E. / Loh, W.S. / David, J.P.R. / Tozer, R.C. / Soloviev, S.I. / Sandvik, P.M. et al. | 2010
- 1085
-
Fabrication and Characteristics of Micro Heaters Based on Polycrystalline 3C-SiC for High Temperature and VoltageChung, G.S. / Jeong, J.M. et al. | 2010
- 1089
-
Silicon Carbide APD with Improved Detection Sensitivity and StabilityBakowski, M. / Schoner, A. / Petermann, I. / Savage, S. et al. | 2010
- 1093
-
Silicon Carbide Based Energy Harvesting Module for Hostile EnvironmentsBaker, S. / Miao, B. / Brennan, D.R. / Vassilevski, K. / Wright, N.G. / Horsfall, A.B. et al. | 2010
- 1097
-
New Generation of SiC Based Biodevices Implemented on 4'' WafersGodignon, P. / Martin, I. / Gabriel, G. / Gomez, R. / Placidi, M. / Villa, R. et al. | 2010
- 1101
-
SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power SemiconductorsBiela, J. / Schweizer, M. / Waffler, S. / Wrzecionko, B. / Kolar, J.W. et al. | 2010
- 1107
-
Fully-Integrated 6H-SiC JFET Amplifiers for High-Temperature SensingPatil, A. / Fu, X.A. / Mehregany, M. / Garverick, S. et al. | 2010
- 1111
-
Application of SiC Normally-On JFETs in Photovoltaic Power Converters: Suitable Circuits and PotentialsAraujo, S.V. / Sahan, B. / Zacharias, P. / Rupp, R. / Zhang, X. et al. | 2010
- 1115
-
Fabrication of SiC JFET-Based Monolithic Integrated CircuitsFu, X.A. / Patil, A. / Lee, T.H. / Garverick, S. / Mehregany, M. et al. | 2010
- 1119
-
Electrical and Thermal Performance of 1200 V, 100 A, 200^oC 4H-SiC MOSFET-Based Power Switch ModulesScofield, J.D. / Merrett, N. / Richmond, J. / Agarwal, A. / Leslie, S. et al. | 2010
- 1123
-
Performance and Reliability of SiC MOSFETs for High-Current Power ModulesMatocha, K. / Losee, P.A. / Gowda, A. / Delgado, E. / Dunne, G. / Beaupre, R. / Stevanovic, L. et al. | 2010
- 1127
-
Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive CircuitIshikawa, K. / Ogawa, K. / Kameshiro, N. / Onose, H. / Nagasu, M. et al. | 2010
- 1131
-
Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC MaterialBanu, V. / Brosselard, P. / Jorda, X. / Godignon, P. / Millan, J. et al. | 2010
- 1135
-
Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from - 150 ^oC to +500 ^oCNeudeck, P.G. / Krasowski, M.J. / Chen, L.Y. / Prokop, N.F. et al. | 2010
- 1139
-
Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction TemperaturesTanimoto, S. / Nishio, N. / Suzuki, T. / Murakami, Y. / Ohashi, H. / Yamaguchi, H. / Okumura, H. et al. | 2010
- 1143
-
NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature ApplicationsLe-Huu, M. / Schrey, F.F. / Grieb, M. / Schmitt, H. / Haublein, V. / Bauer, A.J. / Ryssel, H. / Frey, L. et al. | 2010
- 1147
-
600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source ConfigurationVeliadis, V. / Urciuoli, D. / Hearne, H. / Ha, H.C. / Howell, R. / Scozzie, C. et al. | 2010
- 1151
-
Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFETKang, I.H. / Joo, S.J. / Bahng, W. / Kim, S.C. / Kim, N.K. et al. | 2010
- 1155
-
A Step toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJTTournier, D. / Bevilacqua, P. / Brosselard, P. / Planson, D. et al. | 2010
- 1159
-
Fabrication and Testing of 4H-SiC MESFETs for Analog Functions CircuitsDevie, A. / Tournier, D. / Godignon, P. / Vellvehi, M. / Montserrat, J. / Jorda, X. et al. | 2010
- 1163
-
Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power ConverterPotbhare, S. / Goldsman, N. / Akturk, A. / Lelis, A.J. et al. | 2010
- 1167
-
SiC JFETs for Power Module ApplicationsHilsenbeck, J. / Xi, Z. / Domes, D. / Ruschenschmidt, K. / Treu, M. / Rupp, R. et al. | 2010
- 1171
-
System Improvements of Photovoltaic Inverters with SiC-TransistorsKranzer, D. / Reiners, F. / Wilhelm, C. / Burger, B. et al. | 2010
- 1177
-
Discussion of Turn on Current Peaks of SiC Switches in Half BridgesKoch, I. / Canders, W.R. et al. | 2010
- 1183
-
AlN Substrates and Epitaxy ResultsMakarov, Y.N. / Chemekova, T.Y. / Avdeev, O.V. / Mokhov, N. / Nagalyuk, S.S. / Ramm, M.G. / Helava, H. et al. | 2010
- 1187
-
Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC SubstratesYazdi, G.R. / Vassilevski, K. / Cordoba, J.M. / Gogova, D. / Nikitina, I.P. / Syvajarvi, M. / Oden, M. / Wright, N.G. / Yakimova, R. et al. | 2010
- 1191
-
Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC SubstratesYounes, G. / Ferro, G. / Soueidan, M. / Brioude, A. / Cauwet, F. et al. | 2010
- 1195
-
Deep-Level Defects in AlN Single Crystals: EPR StudiesIlyin, I.V. / Soltamova, A.A. / Soltamov, V.A. / Khramtsov, V.A. / Mokhov, E.N. / Baranov, P.G. et al. | 2010
- 1199
-
Quality Control and Electrical Properties of Thin Amorphous (SiC)~1~-~x(AlN)~x Films Produced by Radio Frequency Dual Magnetron Sputteringde la Puente, G.G. / Erlenbach, O. / Guerra, J.A. / Hupfer, T. / Steidl, M. / De Zela, F. / Weingartner, R. / Winnacker, A. et al. | 2010
- 1203
-
Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiCDavydov, S.Y. / Lebedev, A.A. et al. | 2010
- 1207
-
2DEG HEMT Mobility vs Inversion Channel MOSFET MobilityPerez-Tomas, A. / Placidi, M. / Baron, N. / Chenot, S. / Cordier, Y. / Moreno, J.C. / Millan, J. / Godignon, P. et al. | 2010
- 1211
-
Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal OxidationRoccaforte, F. / Iucolano, F. / Giannazzo, F. / Di Franco, S. / Bongiorno, C. / Puglisi, V. / Raineri, V. et al. | 2010
- 1215
-
Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al~0~.~2Ga~0~.~8N Accumulation-Mode FET DevicesTadjer, M.J. / Hobart, K.D. / Mastro, M.A. / Anderson, T.J. / Imhoff, E.A. / Kub, F.J. / Hite, J.K. / Eddy, C.R. et al. | 2010
- 1219
-
2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) SubstratesTonisch, K. / Jatal, W. / Granzner, R. / Kittler, M. / Baumann, U. / Schwierz, F. / Pezoldt, J. et al. | 2010
- 1223
-
Energy Optimization of As+ Ion Implantation on SiO~2 Passivation Layer of AlGaN/GaN HEMTsLim, J.Y. / Choi, Y.H. / Kim, Y.S. / Kim, M.K. / Han, M.K. et al. | 2010
- 1227
-
Characteristics of Diamond SBD's Fabricated on Half Inch Size CVD Wafer Made by the ``Direct Wafer Fabrication Technique''Shikata, S. / Umezawa, H. / Yamada, H. / Tsubouchi, T. / Mokuno, Y. / Chayahara, A. et al. | 2010
- 1231
-
High Temperature Characteristics of Diamond SBDsUmezawa, H. / Ikeda, K. / Kumaresan, R. / Shikata, S. et al. | 2010
- 1235
-
Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC NanowiresRogdakis, K. / Bano, E. / Montes, L. / Bechelany, M. / Cornu, D. / Zekentes, K. et al. | 2010
- 1239
-
Nitrogen Centers in Nanodiamonds: EPR StudiesSoltamova, A.A. / Baranov, P.G. / Ilyin, I.V. / Vul, A.Y. / Kidalov, S.V. / Shakhov, F.M. / Mamin, G.V. / Silkin, N.I. / Orlinskii, S.B. / Salakhov, M.K. et al. | 2010
- 1243
-
Silicon-on-SiC, a Novel Semiconductor Structure for Power DevicesJennings, M.R. / Perez-Tomas, A. / Guy, O.J. / Lodzinski, M. / Gammon, P.M. / Burrows, S. / Covington, J.A. / Mawby, P.A. et al. | 2010