Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition [7602-73] (Englisch)
- Neue Suche nach: Ni, X.
- Neue Suche nach: Wu, M.
- Neue Suche nach: Lee, J.
- Neue Suche nach: Li, X.
- Neue Suche nach: Baski, A.
- Neue Suche nach: Ozgur, U.
- Neue Suche nach: Morkoc, H.
- Neue Suche nach: SPIE (Society)
- Neue Suche nach: Ni, X.
- Neue Suche nach: Wu, M.
- Neue Suche nach: Lee, J.
- Neue Suche nach: Li, X.
- Neue Suche nach: Baski, A.
- Neue Suche nach: Ozgur, U.
- Neue Suche nach: Morkoc, H.
- Neue Suche nach: Chyi, Jen-Inn
- Neue Suche nach: SPIE (Society)
In:
Gallium nitride materials and devicess V
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7602 20
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2010
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition [7602-73]
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Beteiligte:Ni, X. ( Autor:in ) / Wu, M. ( Autor:in ) / Lee, J. ( Autor:in ) / Li, X. ( Autor:in ) / Baski, A. ( Autor:in ) / Ozgur, U. ( Autor:in ) / Morkoc, H. ( Autor:in ) / Chyi, Jen-Inn / SPIE (Society)
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Kongress:Conference; 5th, Gallium nitride materials and devicess V ; 2010 ; San Francisco, CA
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Erschienen in:Gallium nitride materials and devicess V ; 7602 20PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING ; 7602 ; 7602 20
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsort:Bellingham, Wash.
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Erscheinungsdatum:01.01.2010
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Format / Umfang:7602 20
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Anmerkungen:Includes bibliographical references and index.
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 76020A
-
Molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cellsChang, Yi-Lu / Mi, Zetian et al. | 2010
- 76020B
-
The comprehensive characteristics of quaternary AlInGaN with various TMI molar rateYu, Sheng-Fu / Chang, Shoou-Jinn / Chang, Sheng-Po / Lin, Ray-Ming et al. | 2010
- 76020C
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Ammonothermal growth of GaN substratesDwiliński, R. / Doradziński, R. / Garczyński, J. / Sierzputowski, L. / Kucharski, R. / Zajac, M. / Rudziński, M. / Strupiński, W. / Serafińczuk, J. / Kudrawiec, R. et al. | 2010
- 76020D
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Non-polar m-plane GaN film and polarized InGaN/GaN LED grown on LiAlO2(001) substratesZhang, R. / Xie, Z. L. / Liu, B. / Xiu, X. Q. / Fu, D. Y. / Zhang, Z. / Han, P. / Zheng, Y. D. / Zhou, S. M. et al. | 2010
- 76020E
-
Magnetic cages of GaN nanoclusters doped with Gd and NdKumar, Vijay / Zavada, John M. et al. | 2010
- 76020G
-
Extended defects in semipolar (11-22) gallium nitrideArroyo-Rojas Dasilva, Yadira / Ruterana, Pierre / Lahourcade, Lise / Monroy, Eva / Nataf, Gilles et al. | 2010
- 76020H
-
Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channelsMatulionis, Arvydas / Liberis, Juozapas / Morkoç, Hadis et al. | 2010
- 76020I
-
InGaN light-emitting diodes with highly transparent ZnO:Ga electrodesLiu, H. Y. / Li, X. / Ni, X. / Avrutin, V. / Izyumskaya, N. / Özgür, Ü. / Morkoç, H. et al. | 2010
- 76020K
-
Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applicationsVilalta-Clemente, Arantxa / Morales, Magali / Chauvat, Marie P. / Arroyo-Rojas Dasilva, Yadira / Poisson, Marie A. / Heuken, Michael / Giesen, Christoph / Ruterana, Pierre et al. | 2010
- 76020L
-
Quantum 1/f noise theory and experiment in QWIPsTruong, Amanda M. / Handel, Peter H. et al. | 2010
- 76020M
-
1/f noise: a window to HFET stabilityHandel, Peter H. / Sherif, Taher / Kayis, Cemil / Leach, Jacob / Zhu, Congyong / Morkoç, Hadis et al. | 2010
- 76020N
-
Analytical calculation of the quantum 1/f coherence parameter for HFETsHandel, Peter H. / Sherif, Taher S. et al. | 2010
- 76020O
-
Measurements of gate lag in high-quality nearly lattice matched InAlN/AlN/GaN HFET structuresLeach, J. H. / Wu, M. / Ni, X. / Li, X. / Özgür, Ü. / Morkoç, H. et al. | 2010
- 76020Q
-
Nano-ultrasonic based on GaN nano-layersSun, Chi-Kuang / Wen, Yu-Chieh / Chen, Yi-Hsin / Lin, Kung-Hsuan et al. | 2010
- 76020T
-
Scanning near-field optical spectroscopy of AlGaN-based light emitting diodesPinos, Andrea / Marcinkevičius, Saulius et al. | 2010
- 76020U
-
Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/Sapphire by 3ω methodTong, Hua / Zhang, Jing / Zhao, Hongping / Liu, Guangyu / Handara, Vincent A. / Herbsommer, Juan A. / Tansu, Nelson et al. | 2010
- 76020Y
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Effect of UV exposure on the surface charge behavior for GaNFoussekis, M. / Ferguson, J. D. / Ni, X. / Morkoç, H. / Reshchikov, M. A. / Baski, A. A. et al. | 2010
- 76020Z
-
Achieving p-InxGa1-xN alloys with high In contentsPantha, B. N. / Sedhain, A. / Li, J. / Lin, J. Y. / Jiang, H. X. et al. | 2010
- 76021A
-
Review of nitride infrared intersubband devicesTchernycheva, Maria / Julien, François H. / Monroy, Eva et al. | 2010
- 76021B
-
First-principles simulation of GaN material and devices: an application to GaN APDsBellotti, Enrico / Moresco, Michele / Bertazzi, Francesco et al. | 2010
- 76021E
-
Promising composite die-bonding materials for high-power GaN-based LED applicationsHorng, Ray-Hua / Hong, Jhih-Sin / Tsai, Yu-Li / Chen, Chia-Ju / Chen, Chih-Ming / Wuu, Dong-Sing et al. | 2010
- 76021F
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Realization of high-efficiency AlGaN-based ultraviolet light emittersJeon, Seong-Ran / Lee, Sung-Jai / Kang, In-Ki / Kim, Jai Bum / Hwang, Nam / Son, Sung-Jin et al. | 2010
- 76021G
-
Novel device concepts for high-efficiency InGaN-based light-emitting diodesZhao, Hongping / Liu, Guangyu / Ee, Yik-Khoon / Li, Xiao-Hang / Tong, Hua / Zhang, Jing / Huang, G. S. / Tansu, Nelson et al. | 2010
- 76021H
-
Role of interface roughness on lateral transport in InGaN/GaN LEDs: diffusion length, dislocation spacing, and radiative efficiencyLu, I-Lin / Wu, Yuh-Renn / Hinckley, John M. / Singh, Jasprit et al. | 2010
- 76021K
-
Development of high-power UV LEDs for epoxy curing applicationsLiu, W. H. / Chu, C. F. / Cheng, C. C. / Hsu, K. H. / Chung, Y. T. / Wang, Y. K. / Li, C. C. / Chu, J. Y. / Fan, F. H. / Cheng, H. C. et al. | 2010
- 76021L
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Original GaN-based LED structure on ZnO template by MOCVDLin, Ray-Ming / Yu, Sheng-Fu / Chen, Miin-Jang / Hsu, Wen-Ching et al. | 2010
- 76021M
-
Enhancement of light extraction efficiency of blue-light-emitting diodes by moth-eye structureKondo, T. / Suzuki, A. / Teramae, F. / Kitano, T. / Kaneko, Y. / Kawai, R. / Teshima, K. / Maeda, S. / Kamiyama, S. / Iwaya, M. et al. | 2010
- 76021N
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Internal quantum efficiency of m-plane InGaN on Si and GaNLee, J. / Ni, X. / Wu, M. / Li, X. / Shimada, R. / Özgür, Ü. / Baski, A. A. / Morkoç, H. / Paskova, T. / Mulholland, G. et al. | 2010
- 76021R
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Efficiency retention at high current injection levels inm-plane InGaN light emitting diodesLi, X. / Ni, X. / Lee, J. / Wu, M. / Özgür, Ü, / Morkoç, H. / Paskova, T. / Mulholland, G. / Evans, K. R. et al. | 2010
- 76021W
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Ab initio study of structural properties for zincblende AlInN: comparison of LDA and GGALiou, Bo-Ting / Wu, Bang-Yenn et al. | 2010
- 76021X
-
Output power enhancement of light-emitting diodes with defect passivation layerLo, Ming-Hua / Tu, Po-Min / Cheng, Yuh-Jen / Wang, Chao-Hsun / Hung, Cheng-Wei / Hsu, Shih-Chieh / Kuo, Hao-Chung / Zan, Hsiao-Wen / Wang, Shing-Chung / Chang, Chun-Yen et al. | 2010
- 760201
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Front Matter: Volume 7602| 2010
- 760202
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Growth of self-standing GaN substratesLee, Hyun-Jae / Fujii, Katsushi / Goto, Takenari / Kim, Chinkyo / Chang, Jiho / Hong, Soon-Ku / Cho, Meoungwhan / Yao, Takafumi et al. | 2010
- 760203
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Selective growth and impurity incorporation in semipolar GaN grown on Si substrateSawaki, N. / Honda, Y. / Hikosaka, T. / Tanaka, S. / Yamaguchi, M. / Koide, N. / Tomita, K. et al. | 2010
- 760212
-
Extended defects in nitride layers, influence on the quantum wells and quantum dotsRuterana, P. / Chauvat, M. P. / Arroyo Rojas Dasilva, Y. / Lei, H. / Lahourcade, L. / Monroy, E. et al. | 2010
- 760215
-
The lasing characteristics of GaN-based two-dimensional photonic crystal surface-emitting lasersChen, S. W. / Kao, T. T. / Wu, T. T. / Lu, T. C. / Kuo, H. C. / Wang, S. C. et al. | 2010
- 760217
-
GaN-based VCSELs: analysis of internal device physics and performance limitationsPiprek, Joachim / Li, Simon et al. | 2010
- 760218
-
High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimesRaring, James W. / Hall, Eric M. / Schmidt, Mathew C. / Poblenz, Christiane / Li, Ben / Pfister, Nick / Feezell, Daniel F. / Craig, Richard / Speck, James S. / DenBaars, Steven P. et al. | 2010
- 760219
-
Performance improvement of InGaN-based laser diodes by epitaxial layer structure designLiu, Jianping / Zhang, Yun / Lochner, Zachary / Kim, Seong-soo / Kim, Hyunsoo / Ryou, Jae-Hyun / Shen, Shyh-Chiang / Yoder, P. Doug / Dupuis, Russell D. / Wei, Qiyuan et al. | 2010
- 760220
-
Non-polarm-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor depositionNi, X. / Wu, M. / Lee, J. / Li, X. / Baski, A. / Özgür, Ü. / Morkoç, H. et al. | 2010
- 760221
-
Comparison of different template structures for high quality and self-separation thick GaN growthFang, Yen-Hsiang / Chao, Chu-Li / Chi, Tung-Wei / Chen, Kuei-Ming / Liu, Po-Chun / Tsay, Jenq-Dar et al. | 2010
- 760222
-
Analytical methods to study loss mechanisms and lifetime investigations of blue InGaN laser diodesMüller, J. / Brüderl, G. / Schillgalies, M. / Breidenassel, A. / Tautz, S. / Dini, D. / Lermer, T. / Lutgen, S. / Strauß, U. et al. | 2010
- 760223
-
Reduction in operating voltage of UV laser diodeIchikawa, Tomoki / Takeda, Kenichiro / Ogiso, Yuji / Nagata, Kengo / Iwaya, Motoaki / Kamiyama, Satoshi / Amano, Hiroshi / Akasaki, Isamu / Yoshida, Harumasa / Kuwabara, Masakazu et al. | 2010
- 760224
-
On carrier spillover in c- and m-plane InGaN light-emitting diodesLee, J. / Li, X. / Ni, X. / Özgür, Ü. / Morkoç, H. / Paskova, T. / Mulholland, G. / Evans, K. R. et al. | 2010
- 760225
-
Analysis and comparison of UV photodetectors based on wide bandgap semiconductorsWang, Qin / Savage, Susan / Noharet, Bertrand / Petermann, Ingemar / Persson, Sirpa / Almqvist, Susanne / Bakowski, Mietek / Andersson, Jan Y. et al. | 2010
-
Ammonothermal growth of GaN substrates (Invited Paper) [7602-11]Dwilinski, R. / Doradzinski, R. / Garczynski, J. / Sierzputowski, L. / Kucharski, R. / Zajac, M. / Rudzinski, M. / Strupinski, W. / Serafinczuk, J. / Kudrawiec, R. et al. | 2010
-
Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels [7602-16]Matulionis, A. / Liberis, J. / Morkoc, H. / SPIE (Society) et al. | 2010
-
Measurements of gate lag in high-quality nearly lattice matched InAlN/AlN/GaN HFET structures [7602-23]Leach, J.H. / Wu, M. / Ni, X. / Li, X. / Ozgur, U. / Morkoc, H. / SPIE (Society) et al. | 2010
-
Review of nitride infrared intersubband devices (Invited Paper) [7602-45]Tchernycheva, M. / Julien, F.H. / Monroy, E. / SPIE (Society) et al. | 2010
-
Comparison of different template structures for high quality and self-separation thick GaN growth [7602-74]Fang, Y.-H. / Chao, C.-L. / Chi, T.-W. / Chen, K.-M. / Liu, P.-C. / Tsay, J.-D. / SPIE (Society) et al. | 2010
-
Non-polar m-plane GaN film and polarized InGaN/GaN LED grown on LiAlO~2 (001) substrates (Invited Paper) [7602-12]Zhang, R. / Xie, Z.L. / Liu, B. / Xiu, X.Q. / Fu, D.Y. / Zhang, Z. / Han, P. / Zheng, Y.D. / Zhou, S.M. / SPIE (Society) et al. | 2010
-
Scanning near-field optical spectroscopy of AlGaN-based light emitting diodes [7602-28]Pinos, A. / Marcinkevicius, S. / SPIE (Society) et al. | 2010
-
First-principles simulation of GaN material and devices: an application to GaN APDs (Invited Paper) [7602-46]Bellotti, E. / Moresco, M. / Bertazzi, F. / SPIE (Society) et al. | 2010
-
Promising composite die-bonding materials for high-power GaN-based LED applications [7602-50]Horng, R.-H. / Hong, J.-S. / Tsai, Y.-L. / Chen, C.-J. / Chen, C.-M. / Wuu, D.-S. / SPIE (Society) et al. | 2010
-
Enhancement of light extraction efficiency of blue-light-emitting diodes by moth-eye structure [7602-58]Kondo, T. / Suzuki, A. / Teramae, F. / Kitano, T. / Kaneko, Y. / Kawai, R. / Teshima, K. / Maeda, S. / Kamiyama, S. / Iwaya, M. et al. | 2010
-
Reduction in operating voltage of UV laser diode [7602-76]Ichikawa, T. / Takeda, K. / Ogiso, Y. / Nagata, K. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. / Yoshida, H. / Kuwabara, M. et al. | 2010
-
Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applications [7602-19]Vilalta-Clemente, A. / Morales, M. / Chauvat, M.P. / Dasilva, Y.A.-R. / Poisson, M.A. / Heuken, M. / Giesen, C. / Ruterana, P. / SPIE (Society) et al. | 2010
-
1/f noise: a window to HFET stability [7602-21]Handel, P.H. / Sherif, T. / Kayis, C. / Leach, J. / Zhu, C. / Morkoc, H. / SPIE (Society) et al. | 2010
-
Achieving p-In~xGa~1~-~xN alloys with high In contents [7602-34]Pantha, B.N. / Sedhain, A. / Li, J. / Lin, J.Y. / Jiang, H.X. / SPIE (Society) et al. | 2010
-
Performance improvement of InGaN-based laser diodes by epitaxial layer structure design [7602-44]Liu, J. / Zhang, Y. / Lochner, Z. / Kim, S.-S. / Kim, H. / Ryou, J.-H. / Shen, S.-C. / Yoder, P.D. / Dupuis, R.D. / Wei, Q. et al. | 2010
-
High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes [7602-43]Raring, J.W. / Hall, E.M. / Schmidt, M.C. / Poblenz, C. / Li, B. / Pfister, N. / Feezell, D.F. / Craig, R. / Speck, J.S. / DenBaars, S.P. et al. | 2010
-
Realization of high-efficiency AlGaN-based ultraviolet light emitters (Invited Paper) [7602-51]Jeon, S.-R. / Lee, S.-J. / Kang, I.-K. / Kim, J.B. / Hwang, N. / Son, S.-J. / SPIE (Society) et al. | 2010
-
Output power enhancement of light-emitting diodes with defect passivation layer [7602-69]Lo, M.-H. / Tu, P.-M. / Cheng, Y.-J. / Wang, C.-H. / Hung, C.-W. / Hsu, S.-C. / Kuo, H.-C. / Zan, H.-W. / Wang, S.-C. / Chang, C.-Y. et al. | 2010
-
Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes [7602-63]Li, X. / Ni, X. / Lee, J. / Wu, M. / Ozgur, U. / Morkoc, H. / Paskova, T. / Mulholland, G. / Evans, K.R. / SPIE (Society) et al. | 2010
-
Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/Sapphire by 3 omega method [7602-29]Tong, H. / Zhang, J. / Zhao, H. / Liu, G. / Handara, V.A. / Herbsommer, J.A. / Tansu, N. / SPIE (Society) et al. | 2010
-
Effect of UV exposure on the surface charge behavior for GaN [7602-33]Foussekis, M. / Ferguson, J.D. / Ni, X. / Morkoc, H. / Reshchikov, M.A. / Baski, A.A. / SPIE (Society) et al. | 2010
-
GaN-based VCSELs: analysis of internal device physics and performance limitations [7602-42]Piprek, J. / Li, S. / SPIE (Society) et al. | 2010
-
Role of interface roughness on lateral transport in InGaN/GaN LEDs: diffusion length, dislocation spacing, and radiative efficiency [7602-53]Lu, I.-L. / Wu, Y.-R. / Hinckley, J.M. / Singh, J. / SPIE (Society) et al. | 2010
-
Development of high-power UV LEDs for epoxy curing applications (Invited Paper) [7602-56]Liu, W.H. / Chu, C.F. / Cheng, C.C. / Hsu, K.H. / Chung, Y.T. / Wang, Y.K. / Li, C.C. / Chu, J.Y. / Fan, F.H. / Cheng, H.C. et al. | 2010
-
On carrier spillover in c- and m-plane InGaN light-emitting diodes [7602-77]Lee, J. / Li, X. / Ni, X. / Ozgur, U. / Morkoc, H. / Paskova, T. / Mulholland, G. / Evans, K.R. / SPIE (Society) et al. | 2010
-
Selective growth and impurity incorporation in semipolar GaN grown on Si substrate (Invited Paper) [7602-02]Sawaki, N. / Honda, Y. / Hikosaka, T. / Tanaka, S. / Yamaguchi, M. / Koide, N. / Tomita, K. / SPIE (Society) et al. | 2010
-
Extended defects in nitride layers, influence on the quantum wells and quantum dots (Invited Paper) [7602-37]Ruterana, P. / Chauvat, M.P. / Dasilya, Y.A.R. / Lei, H. / Lahourcade, L. / Monroy, E. / SPIE (Society) et al. | 2010
-
Analysis and comparison of UV photodetectors based on wide bandgap semiconductors [7602-78]Wang, Q. / Savage, S. / Noharet, B. / Petermann, I. / Persson, S. / Almqvist, S. / Bakowski, M. / Andersson, J.Y. / SPIE (Society) et al. | 2010
-
Molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cells [7602-09]Chang, Y.-L. / Mi, Z. / SPIE (Society) et al. | 2010
-
Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition [7602-73]Ni, X. / Wu, M. / Lee, J. / Li, X. / Baski, A. / Ozgur, U. / Morkoc, H. / SPIE (Society) et al. | 2010
-
Extended defects in semipolar (11-22) gallium nitride [7602-15]Dasilva, Y.A.-R. / Ruterana, P. / Lahourcade, L. / Monroy, E. / Nataf, G. / SPIE (Society) et al. | 2010
-
Analytical calculation of the quantum 1/f coherence parameter for HFETs [7602-22]Handel, P.H. / Sherif, T.S. / SPIE (Society) et al. | 2010
-
Growth of self-standing GaN substrates (Invited Paper) [7602-01]Lee, H.-J. / Fujii, K. / Goto, T. / Kim, C. / Chang, J. / Hong, S.-K. / Cho, M. / Yao, T. / SPIE (Society) et al. | 2010
-
The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate [7602-10]Yu, S.-F. / Chang, S.-J. / Chang, S.-P. / Lin, R.-M. / SPIE (Society) et al. | 2010
-
InGaN light-emitting diodes with highly transparent ZnO:Ga electrodes [7602-79]Liu, H.Y. / Li, X. / Ni, X. / Avrutin, V. / Izyumskaya, N. / Ozgur, U. / Morkoc, H. / SPIE (Society) et al. | 2010
-
Nano-ultrasonic based on GaN nano-layers (Invited Paper) [7602-25]Sun, C.-K. / Wen, Y.-C. / Chen, Y.-H. / Lin, K.-H. / SPIE (Society) et al. | 2010
-
The lasing characteristics of GaN-based two-dimensional photonic crystal surface-emitting lasers (Invited Paper) [7602-40]Chen, S.W. / Kao, T.T. / Wu, T.T. / Lu, T.C. / Kuo, H.C. / Wang, S.C. / SPIE (Society) et al. | 2010
-
Internal quantum efficiency of m-plane InGaN on Si and GaN [7602-59]Lee, J. / Ni, X. / Wu, M. / Li, X. / Shimada, R. / Ozgur, U. / Baski, A.A. / Morkoc, H. / Paskova, T. / Mulholland, G. et al. | 2010
-
Novel device concepts for high-efficiency InGaN-based light-emitting diodes (Invited Paper) [7602-52]Zhao, H. / Liu, G. / Ee, Y.-K. / Li, X.-H. / Tong, H. / Zhang, J. / Huang, G.S. / Tansu, N. / SPIE (Society) et al. | 2010
-
Original GaN-based LED structure on ZnO template by MOCVD [7602-57]Lin, R.-M. / Yu, S.-F. / Chen, M.-J. / Hsu, W.-C. / SPIE (Society) et al. | 2010
-
Ab initio study of structural properties for zincblende AlInN: comparison of LDA and GGA [7602-68]Liou, B.-T. / Wu, B.-Y. / SPIE (Society) et al. | 2010
-
Analytical methods to study loss mechanisms and lifetime investigations of blue InGaN laser diodes [7602-75]Muller, J. / Bruderl, G. / Schillgalies, M. / Breidenassel, A. / Tautz, S. / Dini, D. / Lermer, T. / Lutgen, S. / Strauss, U. / SPIE (Society) et al. | 2010
-
Magnetic cages of GaN nanoclusters doped with Gd and Nd [7602-13]Kumar, V. / Zavada, J.M. / SPIE (Society) et al. | 2010
-
Quantum 1/f noise theory and experiment in QWIPs [7602-20]Truong, A.M. / Handel, P.H. / SPIE (Society) et al. | 2010