In situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices [7768-26] (Englisch)
- Neue Suche nach: Kim, J.-Y.
- Neue Suche nach: Kwon, M.-K.
- Neue Suche nach: J., L.V.
- Neue Suche nach: Grego, S.
- Neue Suche nach: Islam, M.S.
- Neue Suche nach: SPIE (Society)
- Neue Suche nach: Kim, J.-Y.
- Neue Suche nach: Kwon, M.-K.
- Neue Suche nach: J., L.V.
- Neue Suche nach: Grego, S.
- Neue Suche nach: Islam, M.S.
- Neue Suche nach: Islam, M. Saiful
- Neue Suche nach: Kobayashi, Nobuhiko P.
- Neue Suche nach: Talin, Albert Alec
- Neue Suche nach: SPIE (Society)
In:
Nanoepitaxy : homo- and heterogeneous synthesis, characterization, and device integration of nanomaterials
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7768 0R
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2010
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:In situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices [7768-26]
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Beteiligte:Kim, J.-Y. ( Autor:in ) / Kwon, M.-K. ( Autor:in ) / J., L.V. ( Autor:in ) / Grego, S. ( Autor:in ) / Islam, M.S. ( Autor:in ) / Islam, M. Saiful / Kobayashi, Nobuhiko P. / Talin, Albert Alec / SPIE (Society)
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Kongress:Conference; 2nd, Nanoepitaxy : homo- and heterogeneous synthesis, characterization, and device integration of nanomaterials ; 2010 ; San Diego, CA
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Erschienen in:PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING ; 7768 ; 7768 0R
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsort:Bellingham, Wash.
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Erscheinungsdatum:01.01.2010
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Format / Umfang:7768 0R
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Anmerkungen:Includes bibliographical references and index.
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 77680A
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Dislocation reduction in CdTe epilayers grown on silicon substrates using buffered nanostructuresShintri, Shashidhar / Rao, Sunil / Li, Huafang / Bhat, Ishwara / Jha, Smita / Liu, C. / Kuech, Thomas / Palosz, Witold / Trivedi, Sudhir / Semendy, Fred et al. | 2010
- 77680B
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Coulomb staircase in fused semiconducting InP nanowires under light illuminationYamada, Hidenori / Yamada, Toshishige / Lohn, Andrew J. / Kobayashi, Nobuhiko P. et al. | 2010
- 77680H
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Temperature-dependent structural characterization of silicon <110> nanowiresKwon, Min-Ki / Kim, Ja-Yeon / J., Logeeswaran V. / Teng, Yi-Ju / Hsu, Hui-Lin / Baeza, Patricia Abellán / Arslan, Ilke / Islam, M. Saif et al. | 2010
- 77680I
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Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cellsKendrick, Chito E. / Eichfeld, Sarah M. / Ke, Yue / Weng, Xiaojun / Wang, Xin / Mayer, Theresa S. / Redwing, Joan M. et al. | 2010
- 77680J
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Tuning of the electronic characteristics of ZnO nanowire transistors and their logic device applicationHong, Woong-Ki / Jo, Gunho / Choe, Minhyock / Park, Woojin / Yoon, Jongwon / Lee, Takhee et al. | 2010
- 77680K
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III-nitride nanowires: growth, properties, and applicationsWang, George T. / Li, Qiming / Huang, Jianyu / Talin, A. Alec / Lin, Yong / Arslan, Ilke / Armstrong, Andrew / Upadhya, Prashanth C. / Prasankumar, Rohit P. et al. | 2010
- 77680L
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Surface modification of metal and metal coated nanoparticles to induce clusteringGowda, M. H. / Glembocki, O. J. / Geng, S. / Prokes, S. M. / Garces, N. / Caldwell, J. D. et al. | 2010
- 77680M
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Formation and plasmonic properties of silicon nanowire arrays produced by chemical etchingProkes, S. M. / Qi, Hua / Yung, Jenny / Glembocki, Orest et al. | 2010
- 77680R
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In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devicesKim, Ja-Yeon / Kwon, Min-Ki / J., Logeeswaran V. / Grego, Sonia / Islam, M. Saif et al. | 2010
- 77680S
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Growth of metallic nanowires on nanoporous alumina templates: nanocomb structuresAtar, Erdem / Vuppuluri, Ravikiran V. / Kaya, Savas et al. | 2010
- 776801
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Front Matter: Volume 7768| 2010
- 776802
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Catalyst-free GaN nanowire growth and optoelectronic characterizationBertness, Krist A. / Sanford, Norman A. / Schlager, John B. et al. | 2010
- 776805
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Tensile strained III-V self-assembled nanostructures on a (110) surfaceLee, Minjoo L. / Simmonds, Paul J. et al. | 2010
- 776806
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Group IV nanomembranes and nanoepitaxy: new properties via local and global strain engineeringCavallo, Francesca / Paskiewicz, Deborah M. / Scott, Shelley A. / Huang, MingHuang / Lagally, Max G. et al. | 2010
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Catalyst-free GaN nanowire growth and optoelectronic characterization (Invited Paper) [7768-01]Bertness, K.A. / Sanford, N.A. / Schlager, J.B. / SPIE (Society) et al. | 2010
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Formation and plasmonic properties of silicon nanowire arrays produced by chemical etching [7768-22]Prokes, S.M. / Qi, H. / Yung, J. / Glembocki, O. / SPIE (Society) et al. | 2010
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In situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices [7768-26]Kim, J.-Y. / Kwon, M.-K. / J., L.V. / Grego, S. / Islam, M.S. / SPIE (Society) et al. | 2010
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Tensile strained III-V self-assembled nanostructures on a (110) surface (Invited Paper) [7768-04]Lee, M.L. / Simmonds, P.J. / SPIE (Society) et al. | 2010
-
Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells (Invited Paper) [7768-17]Kendrick, C.E. / Eichfeld, S.M. / Ke, Y. / Weng, X. / Wang, X. / Mayer, T.S. / Redwing, J.M. / SPIE (Society) et al. | 2010
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Group IV nanomembranes and nanoepitaxy: new properties via local and global strain engineering [7768-05]Cavallo, F. / Paskiewicz, D.M. / Scott, S.A. / Huang, M. / Lagally, M.G. / SPIE (Society) et al. | 2010
-
Coulomb staircase in fused semiconducting InP nanowires under light illumination [7768-10]Yamada, H. / Yamada, T. / Lohn, A.J. / Kobayashi, N.P. / SPIE (Society) et al. | 2010
-
Temperature-dependent structural characterization of silicon <110> nanowires [7768-16]Kwon, M.-K. / Kim, J.-Y. / J., L.V. / Teng, Y.-J. / Hsu, H.-L. / Baeza, P.A. / Arslan, I. / Islam, M.S. / SPIE (Society) et al. | 2010
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Tuning of the electronic characteristics of ZnO nanowire transistors and their logic device application (Invited Paper) [7768-18]Hong, W.-K. / Jo, G. / Choe, M. / Park, W. / Yoon, J. / Lee, T. / SPIE (Society) et al. | 2010
-
III-nitride nanowires: growth, properties, and applications (Invited Paper) [7768-19]Wang, G.T. / Li, Q. / Huang, J. / Talin, A.A. / Lin, Y. / Arslan, I. / Armstrong, A. / Upadhya, P.C. / Prasankumar, R.P. / SPIE (Society) et al. | 2010
-
Dislocation reduction in CdTe epilayers grown on silicon substrates using buffered nanostructures [7768-09]Shintri, S. / Rao, S. / Li, H. / Bhat, I. / Jha, S. / Liu, C. / Kuech, T. / Palosz, W. / Trivedi, S. / Semendy, F. et al. | 2010
-
Growth of metallic nanowires on nanoporous alumina templates: nanocomb structures [7768-27]Atar, E. / Vuppuluri, R.V. / Kaya, S. / SPIE (Society) et al. | 2010
-
Surface modification of metal and metal coated nanoparticles to induce clustering [7768-20]Gowda, M.H. / Glembocki, O.J. / Geng, S. / Prokes, S.M. / Garces, N. / Caldwell, J.D. / SPIE (Society) et al. | 2010