Recent developments in AlGaN-based laser diodes for short ultraviolet region (Invited Paper) [7939-43] (Englisch)
- Neue Suche nach: Yoshida, H.
- Neue Suche nach: Kuwabara, M.
- Neue Suche nach: Yamashita, Y.
- Neue Suche nach: Uchiyama, K.
- Neue Suche nach: Kan, H.
- Neue Suche nach: SPIE (Society)
- Neue Suche nach: Yoshida, H.
- Neue Suche nach: Kuwabara, M.
- Neue Suche nach: Yamashita, Y.
- Neue Suche nach: Uchiyama, K.
- Neue Suche nach: Kan, H.
- Neue Suche nach: Chyi, Jen-Inn
- Neue Suche nach: SPIE (Society)
In:
Gallium nitride materials and devices
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7939 0V
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2011
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Recent developments in AlGaN-based laser diodes for short ultraviolet region (Invited Paper) [7939-43]
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Beteiligte:Yoshida, H. ( Autor:in ) / Kuwabara, M. ( Autor:in ) / Yamashita, Y. ( Autor:in ) / Uchiyama, K. ( Autor:in ) / Kan, H. ( Autor:in ) / Chyi, Jen-Inn / SPIE (Society)
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Kongress:Conference; 6th, Gallium nitride materials and devices ; 2011 ; San Francisco, CA
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Erschienen in:Gallium nitride materials and devices ; 7939 0VPROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING ; 7939 ; 7939 0V
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsort:Bellingham
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Erscheinungsdatum:01.01.2011
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Format / Umfang:7939 0V
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Anmerkungen:"SPIE Photonics West" --cover. Includes bibliographical references and index.
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 79390A
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Kelvin probe measurements of p-type GaNFoussekis, M. / Ni, X. / Morkoç, H. / Reshchikov, M. A. / Baski, A. A. et al. | 2011
- 79390B
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Fermi level effect on strain of Si-doped GaNXie, Jinqiao / Mita, Seiji / Collazo, Ramón / Rice, Anthony / Tweedie, James / Sitar, Zlatko et al. | 2011
- 79390C
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The role of fluorine ions in GaN heterojunction transistors: applications and stabilityChen, Kevin J. et al. | 2011
- 79390E
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Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substratesLeach, J. H. / Biswas, N. / Paskova, T. / Preble, E. A. / Evans, K. R. / Wu, M. / Ni, X. / Li, X. / Özgür, Ü. / Morkoç, H. et al. | 2011
- 79390H
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New factors affecting HFET stability, 1/f noise, and reliabilityHandel, Peter H. / Morkoç, Hadis et al. | 2011
- 79390I
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Point defects in GaN and related group-III nitrides studied by means of positron annihilationUedono, Akira / Ishibashi, Shoji / Chichibu, Shigefusa F. / Akimoto, Katsuhiro et al. | 2011
- 79390J
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Role of In-segregation in anomalously large band-gap bowings of (In,Al,Ga)NGorczyca, I. / Suski, T. / Christensen, N. E. / Svane, A. et al. | 2011
- 79390M
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Bowing of biexciton binding in AlxGa1-xN ternary alloysYamada, Yoichi et al. | 2011
- 79390N
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Inhomogeneous carrier distribution in InGaN multiple quantum wells and its influences on device performancesRyu, Han-Youl / Shim, Jong-In et al. | 2011
- 79390O
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Thermoelectric properties of MOCVD-grown AlInN alloys with various compositionsZhang, Jing / Tong, Hua / Liu, Guangyu / Herbsommer, Juan A. / Huang, G. S. / Tansu, Nelson et al. | 2011
- 79390P
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Hydrogen etch of GaN and its application to produce porous GaN cavesYeh, Yen-Hsien / Hsu, Ying-Chia / Wu, Yin-Hao / Chen, Kuei-Ming / Lee, Wei-I et al. | 2011
- 79390Q
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Plasmonic effects in In(Ga)NIvanov, Sergey V. / Shubina, Tatiana V. / Toropov, Alexey A. et al. | 2011
- 79390V
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Recent developments in AlGaN-based laser diodes for short ultraviolet regionYoshida, Harumasa / Kuwabara, Masakazu / Yamashita, Yoji / Uchiyama, Kazuya / Kan, Hirofumi et al. | 2011
- 79390W
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Recent results on the physical origin of the degradation of GaN-based LEDs and lasersMeneghini, M. / Trivellin, N. / Meneghesso, G. / Orita, K. / Takigawa, S. / Tanaka, T. / Ueda, D. / Zanoni, E. et al. | 2011
- 79390Y
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High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substratesRaring, James W. / Schmidt, Mathew C. / Poblenz, Christiane / Li, Ben / Chang, Yu-Chia / Mondry, Mark J. / Lin, You-Da / Krames, Michael R. / Craig, Richard / Speck, James S. et al. | 2011
- 79391A
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An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodesShim, Jong-In / Kim, Hyunsung / Shin, Dong-Soo / Ryu, Han-Youl et al. | 2011
- 79391C
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Modeling of III-nitride light-emitting diodes: progress, problems, and perspectivesKarpov, Sergey Yu. et al. | 2011
- 79391D
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Enhancement of external quantum efficiency in GaN based LEDsSon, Jun Ho / Lee, Jong-Lam et al. | 2011
- 79391E
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Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imagingYankovich, A. B. / Kvit, A. V. / Li, X. / Zhang, F. / Avrutin, V. / Liu, H. Y. / Izyumskaya, N. / Özgür, Ü. / Morkoç, H. / Voyles, P. M. et al. | 2011
- 79391G
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Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light-emitting diodesKolbe, Tim / Knauer, Arne / Stellmach, Joachim / Chua, Chris / Yang, Zhihong / Einfeldt, Sven / Vogt, Patrick / Johnson, Noble M. / Weyers, Markus / Kneissl, Michael et al. | 2011
- 79391J
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Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layersYang, Chih-Ciao / Sheu, Jinn-Kong / Huang, Min-Shun / Tu, Shang-Ju / Huang, Feng-Wen / Chang, Kuo-Hua / Lee, Ming-Lun / Lai, Wei-Chih et al. | 2011
- 79391O
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Two-dimensional drift-diffusion simulation of GaN HFETsFan, Qian / Morkoç, Hadis et al. | 2011
- 79391P
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Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channelsLeach, J. H. / Wu, M. / Morkoç, H. / Ramonas, M. / Matulionis, A. et al. | 2011
- 79391S
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1/f Noise in Schottky diodesHandel, Peter H. / Morkoç, Hadis et al. | 2011
- 79391T
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Fabrication and lasing characteristics of GaN nanopillarsLo, Ming-Hua / Cheng, Yuh-Jen / Kuo, Hao-Chung / Wang, Shing-Chung et al. | 2011
- 79391V
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Fabrication of high-efficiency LED using moth-eye structureSakurai, H. / Kondo, T. / Suzuki, A. / Kitano, T. / Mori, M. / Iwaya, M. / Takeuchi, T. / Kamiyama, S. / Akasaki, I. et al. | 2011
- 79391W
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Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substratesIzyumskaya, N. / Liu, S. J. / Okur, S. / Wu, M. / Avrutin, V. / Özgür, Ü. / Metzner, S. / Bertram, F. / Christen, J. / Zhou, L. et al. | 2011
- 79391X
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Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrateChiu, Ching-Hsueh / Lin, Da-Wei / Li, Zhen-Yu / Ling, Shih-Chun / Kuo, Hao-Chung / Lu, Tien-Chang / Wang, Shing-Chung / Liao, Wei-Tasi / Tanikawa, Tomoyuki / Honda, Yoshio et al. | 2011
- 79391Z
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Enhancement in light extraction efficiency of GaN-based vertical light-emitting diodes by AgCu-based reflectorsJeong, Tak / Kim, Seung Whan / Baek, Jong Hyeob et al. | 2011
- 79392A
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Growth of GaN single crystals by a Ca- and Ba-added Na flux methodUkegawa, H. / Konishi, Y. / Fujimori, T. / Miyoshi, N. / Imade, M. / Yoshimura, M. / Kitaoka, Y. / Sasaki, T. / Mori, Y. et al. | 2011
- 79392B
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Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical modelJang, Yuseong / Jang, Dong-Hyun / Shim, Jong-In / Shin, Dong-Soo et al. | 2011
- 79392D
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Direct observation of lattice constant variations depending on layer structures in an InGaN/GaN MQW LEDKimura, Shigeya / Tachibana, Koichi / Oka, Toshiyuki / Nago, Hajime / Yoshida, Hisashi / Nunoue, Shinya et al. | 2011
- 79392E
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Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodesLiu, H. Y. / Li, X. / Liu, S. / Ni, X. / Avrutin, V. / Izyumskaya, N. / Özgür, Ü. / Yankovich, A. B. / Kvit, A. V. / Voyles, P. M. et al. | 2011
- 79392F
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Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETsKayis, Cemil / Leach, Jacob H. / Zhu, C. Y. / Wu, Mo / Li, X. / Yang, X. / Misra, Veena / Handel, Peter H. / Özgür, Ü. / Morkoç, H. et al. | 2011
- 79392G
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Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistorsKayis, Cemil / Zhu, C. Y. / Wu, Mo / Li, Xing / Özgür, Ümit / Morkoç, Hadis et al. | 2011
- 79392H
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Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor depositionLin, Hsien-Yu / Liu, Hsueh-Hsing / Liao, Chen-Zi / Chyi, Jen-Inn et al. | 2011
- 79392J
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Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) templateChen, Cheng-Yu / Siao, Li-Han / Chyi, Jen-Inn / Chao, Chih-Kang / Wu, Chih-Hung et al. | 2011
- 79392K
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Current spreading effect in vertical GaN/InGaN LEDsLi, Chi-Kang / Wu, Yuh-Renn et al. | 2011
- 793901
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Front Matter: Volume 7939| 2011
- 793902
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Growth of bulk GaN crystal by Na flux methodImade, M. / Miyoshi, N. / Yoshimura, M. / Kitaoka, Y. / Sasaki, T. / Mori, Y. et al. | 2011
- 793903
-
Cathodoluminescence spectroscopy on selectively grown GaN nanowiresSchumann, T. / Gotschke, T. / Limbach, F. / Stoica, T. / Calarco, R. et al. | 2011
- 793904
-
Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiationYamaguchi, Tomohiro / Araki, Tsutomu / Nanishi, Yasushi et al. | 2011
- 793905
-
Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodesZhao, Hongping / Zhang, Jing / Liu, Guangyu / Toma, Takahiro / Poplawsky, Jonathan D. / Dierolf, Volkmar / Tansu, Nelson et al. | 2011
- 793907
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Photoluminescence of Mg-dopedm-plane GaN grown by MOCVD on bulk GaN substratesMonemar, Bo / Paskov, Plamen / Pozina, Galia / Hemmingsson, Carl / Bergman, Peder / Lindgren, David / Samuelson, Lars / Ni, Xianfeng / Morkoç, Hadis / Paskova, Tanya et al. | 2011
- 793910
-
The development of monolithic alternating current light-emitting diodeYeh, Wen-Yung / Yen, Hsi-Hsuan / Chan, Yi-Jen et al. | 2011
- 793913
-
Etching formation of GaN micro optoelectronic device arrayFan, Qian / Lee, Frank / Yadavalli, Kameshwar / Lee, Michael S. / Chuang, Chih-Li / El-Ghoroury, Hussein et al. | 2011
- 793916
-
Unified model for the GaN LED efficiency droopPiprek, Joachim et al. | 2011
- 793917
-
Impact of ballistic electron transport on efficiency of InGaN based LEDsZhang, F. / Li, X. / Liu, S. / Okur, S. / Avrutin, V. / Özgür, Ü. / Morkoç, H. / Matulionis, A. / Kisin, M. et al. | 2011
- 793918
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InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodesChua, Christopher / Yang, Zhihong / Knollenberg, Clifford / Teepe, Mark / Cheng, Bowen / Strittmatter, Andre / Bour, David / Johnson, Noble M. et al. | 2011
- 793919
-
Properties of TCO anodes deposited by APCVD and their applications to OLEDsKorotkov, R. Y. / Ricou, P. / Fang, L. / Coffey, J. / Silverman, G. / Ruske, M. / Schwab, H. / Padmaperuma, A. B. / Gaspar, D. J. et al. | 2011
- 793920
-
Deep inductively coupled plasma etching of ELO-GaN grown with high fill factorGao, Haiyong / Lee, Jaesoong / Ni, Xianfeng / Leach, Jacob / Özgür, Ümit / Morkoç, Hadis et al. | 2011
- 793925
-
Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contactsLiu, Shu-Yen / Ye, Jhao-Cheng / Lin, Yu-Chuan / Chang, Kuo-Hua / Lee, Ming-Lun / Lai, Wei-Chih / Sheu, Jinn-Kong et al. | 2011
- 793927
-
High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) siliconKoukourakis, N. / Funke, D. A. / Gerhardt, N. C. / Hofmann, M. R. / Liebich, S. / Bückers, C. / Zinnkann, S. / Zimprich, M. / Beyer, A. / Chatterjee, S. et al. | 2011
-
Modeling of III-nitride light-emitting diodes: progress, problems, and perspectives (Invited Paper) [7939-14]Karpov, S.Y. / SPIE (Society) et al. | 2011
-
Enhancement in light extraction efficiency of GaN-based vertical light-emitting diodes by AgCu-based reflectors [7939-71]Jeong, T. / Kim, S.W. / Baek, J.H. / SPIE (Society) et al. | 2011
-
Growth of GaN single crystals by a Ca- and Ba-added Na flux method [7939-82]Ukegawa, H. / Konishi, Y. / Fujimori, T. / Miyoshi, N. / Imade, M. / Yoshimura, M. / Kitaoka, Y. / Sasaki, T. / Mori, Y. / SPIE (Society) et al. | 2011
-
Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model [7939-83]Jang, Y. / Jang, D.-H. / Shim, J.-I. / Shin, D.-S. / SPIE (Society) et al. | 2011
-
Direct observation of lattice constant variations depending on layer structures in an InGaN/GaN MQW LED [7939-85]Kimura, S. / Tachibana, K. / Oka, T. / Nago, H. / Yoshida, H. / Nunoue, S. / SPIE (Society) et al. | 2011
-
Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions [7939-37]Zhang, J. / Tong, H. / Liu, G. / Herbsommer, J.A. / Huang, G.S. / Tansu, N. / SPIE (Society) et al. | 2011
-
Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates [7939-68]Izyumskaya, N. / Liu, S.J. / Okur, S. / Wu, M. / Avrutin, V. / Ozgur, U. / Metzner, S. / Bertram, F. / Christen, J. / Zhou, L. et al. | 2011
-
Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiation (Invited Paper) [7939-03]Yamaguchi, T. / Araki, T. / Nanishi, Y. / SPIE (Society) et al. | 2011
-
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates (Invited Paper) [7939-20]Monemar, B. / Paskov, P. / Pozina, G. / Hemmingsson, C. / Bergman, P. / Lindgren, D. / Samuelson, L. / Ni, X. / Morkoc, H. / Paskova, T. et al. | 2011
-
The role of fluorine ions in GaN heterojunction transistors: applications and stability (Invited Paper) [7939-25]Chen, K.J. / SPIE (Society) et al. | 2011
-
1/f Noise in Schottky diodes [7939-64]Handel, P.H. / Morkoc, H. / SPIE (Society) et al. | 2011
-
Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes [7939-04]Zhao, H. / Zhang, J. / Liu, G. / Toma, T. / Poplawsky, J.D. / Dierolf, V. / Tansu, N. / SPIE (Society) et al. | 2011
-
Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light-emitting diodes [7939-18]Kolbe, T. / Knauer, A. / Stellmach, J. / Chua, C. / Yang, Z. / Einfeldt, S. / Vogt, P. / Johnson, N.M. / Weyers, M. / Kneissl, M. et al. | 2011
-
Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers [7939-54]Yang, C.-C. / Sheu, J.-K. / Huang, M.-S. / Tu, S.-J. / Huang, F.-W. / Chang, K.-H. / Lee, M.-L. / Lai, W.-C. / SPIE (Society) et al. | 2011
-
Fabrication and lasing characteristics of GaN nanopillars [7939-65]Lo, M.-H. / Cheng, Y.-J. / Kuo, H.-C. / Wang, S.-C. / SPIE (Society) et al. | 2011
-
Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate [7939-69]Chiu, C.-H. / Lin, D.-W. / Li, Z.-Y. / Ling, S.-C. / Kuo, H.-C. / Lu, T.-C. / Wang, S.-C. / Liao, W.-T. / Tanikawa, T. / Honda, Y. et al. | 2011
-
Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates [7939-27]Leach, J.H. / Biswas, N. / Paskova, T. / Preble, E.A. / Evans, K.R. / Wu, M. / Ni, X. / Li, X. / Ozgur, U. / Morkoc, H. et al. | 2011
-
Bowing of biexciton binding in Al~xGa~1~-~xN ternary alloys (Invited Paper) [7939-35]Yamada, Y. / SPIE (Society) et al. | 2011
-
High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates [7939-47]Raring, J.W. / Schmidt, M.C. / Poblenz, C. / Li, B. / Chang, Y.-C. / Mondry, M.J. / Lin, Y.-D. / Krames, M.R. / Craig, R. / Speck, J.S. et al. | 2011
-
Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template [7939-92]Chen, C.-Y. / Siao, L.-H. / Chyi, J.-I. / Chao, C.-K. / Wu, C.-H. / SPIE (Society) et al. | 2011
-
The development of monolithic alternating current light-emitting diode (Invited Paper) [7939-49]Yeh, W.-Y. / Yen, H.-H. / Chan, Y.-J. / SPIE (Society) et al. | 2011
-
Two-dimensional drift-diffusion simulation of GaN HFETs [7939-60]Fan, Q. / Morkoc, H. / SPIE (Society) et al. | 2011
-
Fermi level effect on strain of Si-doped GaN [7939-24]Xie, J. / Mita, S. / Collazo, R. / Rice, A. / Tweedie, J. / Sitar, Z. / SPIE (Society) et al. | 2011
-
Point defects in GaN and related group-III nitrides studied by means of positron annihilation (Invited Paper) [7939-31]Uedono, A. / Ishibashi, S. / Chichibu, S.F. / Akimoto, K. / SPIE (Society) et al. | 2011
-
New factors affecting HFET stability, 1/f noise, and reliability [7939-30]Handel, P.H. / Morkoc, H. / SPIE (Society) et al. | 2011
-
Etching formation of GaN micro optoelectronic device array [7939-52]Fan, Q. / Lee, F. / Yadavalli, K. / Lee, M.S. / Chuang, C.-L. / El-Ghoroury, H.S. / SPIE (Society) et al. | 2011
-
Impact of ballistic electron transport on efficiency of InGaN based LEDs [7939-09]Zhang, F. / Li, X. / Liu, S. / Okur, S. / Avrutin, V. / Ozgur, U. / Morkoc, H. / Matulionis, A. / Kisin, M. / SPIE (Society) et al. | 2011
-
Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor [7939-72]Gao, H. / Lee, J. / Ni, X. / Leach, J. / Ozgur, U. / Morkoc, H. / SPIE (Society) et al. | 2011
-
Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts [7939-77]Liu, S.-Y. / Ye, J.-C. / Lin, Y.-C. / Chang, K.-H. / Lee, M.-L. / Lai, W.-C. / Sheu, J.-K. / SPIE (Society) et al. | 2011
-
Plasmonic effects in In(Ga)N (Invited Paper) [7939-39]Ivanov, S.V. / Shubina, T.V. / Toropov, A.A. / SPIE (Society) et al. | 2011
-
Enhancement of external quantum efficiency in GaN based LEDs (Invited Paper) [7939-15]Son, J.H. / Lee, J.-L. / SPIE (Society) et al. | 2011
-
Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channels [7939-61]Leach, J.H. / Wu, M. / Morkoc, H. / Ramonas, M. / Matulionis, A. / SPIE (Society) et al. | 2011
-
Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors [7939-89]Kayis, C. / Zhu, C.Y. / Wu, M. / Li, X. / Ozgur, U. / Morkoc, H. / SPIE (Society) et al. | 2011
-
Growth of crack-free semi-polar (1-101) GaN on a 7^o-off (001) Si substrate by metal-organic chemical vapor deposition [7939-90]Lin, H.-Y. / Liu, H.-H. / Liao, C.-Z. / Chyi, J.-I. / SPIE (Society) et al. | 2011
-
Inhomogeneous carrier distribution in InGaN multiple quantum wells and its influences on device performances (Invited Paper) [7939-36]Ryu, H.-Y. / Shim, J.-I. / SPIE (Society) et al. | 2011
-
Recent developments in AlGaN-based laser diodes for short ultraviolet region (Invited Paper) [7939-43]Yoshida, H. / Kuwabara, M. / Yamashita, Y. / Uchiyama, K. / Kan, H. / SPIE (Society) et al. | 2011
-
High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon [7939-79]Koukourakis, N. / Funke, D.A. / Gerhardt, N.C. / Hofmann, M.R. / Liebich, S. / Buckers, C. / Zinnkann, S. / Zimprich, M. / Beyer, A. / Chatterjee, S. et al. | 2011
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Growth of bulk GaN crystal by Na flux method (Invited Paper) [7939-01]Imade, M. / Miyoshi, N. / Yoshimura, M. / Kitaoka, Y. / Sasaki, T. / Mori, Y. / SPIE (Society) et al. | 2011
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Hydrogen etch of GaN and its application to produce porous GaN caves [7939-38]Yeh, Y.-H. / Hsu, Y.-C. / Wu, Y.-H. / Chen, K.-M. / Lee, W.-I. / SPIE (Society) et al. | 2011
-
Unified model for the GaN LED efficiency droop [7939-08]Piprek, J. / SPIE (Society) et al. | 2011
-
Properties of TCO anodes deposited by APCVD and their applications to OLEDs (Invited Paper) [7939-11]Korotkov, R.Y. / Ricou, P. / Fang, L. / Coffey, J. / Silverman, G. / Ruske, M. / Schwab, H. / Padmaperuma, A.B. / Gaspar, D.J. / SPIE (Society) et al. | 2011
-
Fabrication of high-efficiency LED using moth-eye structure [7939-67]Sakurai, H. / Kondo, T. / Suzuki, A. / Kitano, T. / Mori, M. / Iwaya, M. / Takeuchi, T. / Kamiyama, S. / Akasaki, I. / SPIE (Society) et al. | 2011
-
Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes [7939-87]Liu, H.Y. / Li, X. / Liu, S. / Ni, X. / Avrutin, V. / Izyumskaya, N. / Ozgur, U. / Yankovich, A.B. / Kvit, A.V. / Voyles, P.M. et al. | 2011
-
Cathodoluminescence spectroscopy on selectively grown GaN nanowires (Invited Paper) [7939-02]Schumann, T. / Gotschke, T. / Limbach, F. / Stoica, T. / Calarco, R. / SPIE (Society) et al. | 2011
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An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes [7939-12]Shim, J.-I. / Kim, H. / Shin, D.-S. / Ryu, H.-Y. / SPIE (Society) et al. | 2011
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Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imaging (Invited Paper) [7939-94]Yankovich, A.B. / Kvit, A.V. / Li, X. / Zhang, F. / Avrutin, V. / Liu, H.Y. / Izyumska, N. / Ozgur, U. / Morkoc, H. / Voyles, P.M. et al. | 2011
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Current spreading effect in vertical GaN/InGaN LEDs [7939-93]Li, C.-K. / Wu, Y.-R. / SPIE (Society) et al. | 2011
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Kelvin probe measurements of p-type GaN [7939-23]Foussekis, M. / Ni, X. / Morkoc, H. / Reshchikov, M.A. / Baski, A.A. / SPIE (Society) et al. | 2011
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Role of In-segregation in anomalously large band-gap bowings of (In,Al,Ga)N (Invited Paper) [7939-32]Gorczyca, I. / Suski, T. / Christensen, N.E. / Svane, A. / SPIE (Society) et al. | 2011
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Recent results on the physical origin of the degradation of GaN-based LEDs and lasers (Invited Paper) [7939-44]Meneghini, M. / Trivellin, N. / Meneghesso, G. / Orita, K. / Takigawa, S. / Tanaka, T. / Ueda, D. / Zanoni, E. / SPIE (Society) et al. | 2011
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InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes (Invited Paper) [7939-10]Chua, C. / Yang, Z. / Knollenberg, C. / Teepe, M. / Cheng, B. / Strittmatter, A. / Bour, D. / Johnson, N.M. / SPIE (Society) et al. | 2011
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Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs [7939-88]Kayis, C. / Leach, J.H. / Zhu, C.Y. / Wu, M. / Li, X. / Yang, X. / Misra, V. / Handel, P.H. / Ozgur, U. / Morkoc, H. et al. | 2011