Efficent Low Cost Process for Single Step Metal Forming of 3D Interconnected Above-IC Inductors (Englisch)
- Neue Suche nach: Ghannam, A.
- Neue Suche nach: Ourak, L.
- Neue Suche nach: Bourrier, D.
- Neue Suche nach: Viallon, C.
- Neue Suche nach: Parra, T.
- Neue Suche nach: Ghannam, A.
- Neue Suche nach: Ourak, L.
- Neue Suche nach: Bourrier, D.
- Neue Suche nach: Viallon, C.
- Neue Suche nach: Parra, T.
In:
Solid-State device research
;
367-370
;
2011
-
ISBN:
- Aufsatz (Konferenz) / Print
-
Titel:Efficent Low Cost Process for Single Step Metal Forming of 3D Interconnected Above-IC Inductors
-
Beteiligte:Ghannam, A. ( Autor:in ) / Ourak, L. ( Autor:in ) / Bourrier, D. ( Autor:in ) / Viallon, C. ( Autor:in ) / Parra, T. ( Autor:in )
-
Kongress:European Conference, Solid-State device research ; 2011 ; Helsinki
-
Erschienen in:Solid-State device research ; 367-370ESSDERC -CONFERENCE- ; 367-370
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsort:Piscataway
-
Erscheinungsdatum:01.01.2011
-
Format / Umfang:4 pages
-
Anmerkungen:Includes bibliographical references and index
-
ISBN:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Analog Design Trends & Challenges in 28 and 20nm CMOS TechnologyDautriche, P. et al. | 2011
- 1
-
ESSDERC 2011 author index| 2011
- 1
-
ESSDERC 2011 Table of contents| 2011
- 5
-
Circuit Design in Organic Semiconductors TechnologiesHeremans, P. / Dehaene, W. / Steyaert, M. / Myny, K. / Marien, H. / Genoe, J. / Gelinck, G. / van Veenendaal, E. et al. | 2011
- 13
-
Photonics - Electronics Integration on CMOSFulbert, L. / Fedeli, J.-M. et al. | 2011
- 19
-
Brain-machine Interfaces as the New Frontier in Extreme MiniaturizationRabaey, J. et al. | 2011
- 25
-
High-k / Metal Gate Innovations Enabling Continued CMOS ScalingFrank, M. et al. | 2011
- 34
-
Fundamentals and current status of steep-slope tunnel field-effect transistorsSeabaugh, A. et al. | 2011
- 36
-
Current Status on GaN Based RF-Power DevicesUeda, T. / Tanaka, T. / Ueda, D. et al. | 2011
- 42
-
Multimode-Multiband Transceivers for Next Generation of Wireless CommunicationsParssinen, A. et al. | 2011
- 54
-
Wireless Medical Implant Technology - Recent Advances and Future DevelopmentsBradley, P. et al. | 2011
- 59
-
DC-DC Converters: From Discrete Towards Fully Integrated CMOSSteyaert, M. / Van Breussegem, T. / Meyvaert, H. / Callemeyn, P. / Wens, M. et al. | 2011
- 67
-
Metal Inserted Poly-Si with High Temperature Annealing for Achieving EOT of 0.62nm in La-Silicate MOSFETKawanago, T. / Lee, Y. / Kakushima, K. / Ahmet, P. / Tsutsui, K. / Nishiyama, A. / Sugii, N. / Natori, K. / Hattori, T. / Iwai, H. et al. | 2011
- 71
-
Thermally Robust Atomic Layer Deposited ZrO2 Gate Dielectric Films Upon the Post-Deposition AnnealingJung, H.-S. / Kim, H.K. / Lee, S.Y. / Lee, N.-I. / Park, T.J. / Hwang, C.S. et al. | 2011
- 75
-
Impact of Oxidation and Reduction Annealing on the Electrical Properties of Ge/La2O3/ZrO2 Gate StacksHenkel, C. / Hellstrom, P.-E. / Ostling, M. / Bethge, O. / Stoger-Pollach, M. / Bertagnolli, E. et al. | 2011
- 79
-
The Study of Flat-Band Voltage Shift Using Arsenic Ion-Implantation with High-k/Metal Inserted Poly Si Gate StacksKim, B. / Ji, Y. / Lee, S. / Jeon, B. / Lee, K. / Hong, K. / Park, S. et al. | 2011
- 83
-
Atomic Layer Deposition of 25-nm-Thin Sidewall Spacer for FinFET PerformanceEndo, K. / Matsukawa, T. / Ishikawa, Y. / Liu, Y. / O Uchi, S.-I. / Sakamoto, K. / Tsukada, J. / Yamauchi, H. / Masahara, M. et al. | 2011
- 87
-
Contact Resistance of TiW to Ultra-Thin Phase Change Material LayersRoy, D. / Klootwijk, J. / Gravesteijn, D. / Wolters, R. et al. | 2011
- 91
-
Physical and Electrical Characterization of Germanium or Tellurium Rich GeXTe1-X for Phase Change MemoriesNavarro, G. / Pashkov, N. / Bastien, J.-C. / Suri, M. / Perniola, L. / Sousa, V. / Maitrejean, S. / Persico, A. / Roule, A. / Toffoli, A. et al. | 2011
- 95
-
Reset Current Reduction in Phase-Change Memory Cell Using a Thin Interfacial Oxide LayerHubert, Q. / Jahan, C. / Toffoli, A. / Perniola, L. / Sousa, V. / Persico, A. / Nodin, J.-F. / Grampeix, H. / Aussenac, F. / de Salvo, B. et al. | 2011
- 99
-
First Demonstration of Phase Change Memory Device Using Solution Processed GeTe NanoparticlesJeyasingh, R.G.D. / Caldwell, M.A. / Milliron, D.J. / Wong, H.-S.P. et al. | 2011
- 103
-
Nanowire-Based RRAM Crossbar Memory with Metallic core-oxide Shell nanostructureCagli, C. / Nardi, F. / Harteneck, B. / Tan, Z. / Zhang, Y. / Ielmini, D. et al. | 2011
- 107
-
Comparative Study of Circuit Perspectives for Multi-Gate Structures at Sub-10nm NodeHuguenin, J.-L. / Lacord, J. / Monfray, S. / Coquand, R. / Skotnicki, T. / Ghibaudo, G. / Boeuf, F. et al. | 2011
- 111
-
Parasitic Bipolar Impact in 32nm Undoped Channel Ultra-Thin BOX (UTBOX) and Biased Ground Plane FDSOI High-k/Metal Gate TechnologyFenouillet-Beranger, C. / Perreau, P. / Boulenc, P. / Tosti, L. / Barnola, S. / Andrieu, F. / Weber, O. / Beneyton, R. / Perrot, C. / de Buttet, C. et al. | 2011
- 115
-
On the Efficiency of Stress Techniques in Gate-Last N-Type Bulk FinFETsEneman, G. / Collaert, N. / Veloso, A. / De Keersgieter, A. / De Meyer, K. / Hoffmann, T. et al. | 2011
- 119
-
AIN-Based MEMS Devices for Vibrational Energy Harvesting ApplicationsBertacchini, A. / Scorcioni, S. / Dondi, D. / Larcher, L. / Pavan, P. / Todaro, M.T. / Campa, A. / Carretto, G. / Petroni, S. / Passaseo, A. et al. | 2011
- 123
-
Holed MEM Resonators with High Aspect Ratio, for High Accuracy Frequency TrimmingCivet, Y. / Casset, F. / Carpentier, J.-F. / Icard, B. / Bustos, J. / Leverd, F. / Mercier, D. / Basrour, S. et al. | 2011
- 127
-
3D Stack Packaging Solution for BAW Devices: 3D Packaging Demonstrator and RF PerformanceSun, X. / Posada, G. / Majeed, B. / Zhang, W. / De Raedt, W. / Diekmann, C. / Eggs, C. / Schmidhammer, E. et al. | 2011
- 131
-
TCAD Study of the Detection Mechanisms in Silicon Nanoribbon-Based Gas SensorsSilvestri, L. / Reggiani, S. / Passi, V. / Ravaux, F. / Dubois, E. / Raskin, J.-P. / Clavaguera, S. / Carella, A. / Celle, C. / Simonato, J.-P. et al. | 2011
- 135
-
Understanding Device Performance by Incorporating 2D-Carrier Profiles from High Resolution Scanning Spreading Resistance Microscopy into Device SimulationsNazir, A. / Eyben, P. / Clarysse, T. / Hellings, G. / Schulze, A. / Mody, J. / De Meyer, K. / Vandervorst, W. et al. | 2011
- 139
-
Challenges in TCAD Simulations of Tunneling Field Effect TransistorsKampen, C. / Burenkov, A. / Lorenz, J. et al. | 2011
- 143
-
A Device Array for Efficient Bias-Temperature Instability MeasurementsSato, T. / Kozaki, T. / Tsutsui, H. / Ochi, H. / Uezono, T. et al. | 2011
- 147
-
A Compact NBTI Model for Accurate Analog Integrated Circuit Reliability SimulationMaricau, E. / Zhang, L. / Franco, J. / Roussel, P. / Groeseneken, G. / Gielen, G. et al. | 2011
- 151
-
Impact of the Carrier Distribution Function on Hot-Carrier Degradation ModelingTyaginov, S. / Starkov, I. / Jungemann, C. / Enichlmair, H. / Park, J.-M. / Grasser, T. et al. | 2011
- 155
-
X-Ray Radiation Effect on CMOS Imager with In-Pixel Buried-Channel Source FollowerChen, Y. / Tan, J. / Wang, X. / Mierop, A. / Theuwissen, A. et al. | 2011
- 159
-
SPICE-Based Performance Analysis of Ultra-Low Voltage Si Nanowire CMOS CircuitsTanaka, C. / Saitoh, M. / Ota, K. / Uchida, K. / Numata, T. et al. | 2011
- 163
-
A General Approach for Multivariate Statistical MOSFET Compact Modeling Preserving CorrelationsLange, A. / Sohrmann, C. / Jancke, R. / Haase, J. / Cheng, B. / Kovac, U. / Asenov, A. et al. | 2011
- 167
-
Predictive Modeling of Parasitic Substrate Currents in High-Voltage Smart Power IC'sConte, F.L. / Sallese, J.-M. / Kayal, M. et al. | 2011
- 171
-
Large-Signal GaN HEMT Electro-Thermal Model with 3D Dynamic Description of Self-HeatingBernardoni, M. / Delmonte, N. / Sozzi, G. / Menozzi, R. et al. | 2011
- 175
-
Light Emission Enhancement by Geometrical Scaling of Carrier Injectors in Si-Based LEDsPiccolo, G. / Puliyankot, V. / Kovalgin, A. / Hueting, R. / Heringa, A. / Schmitz, J. et al. | 2011
- 179
-
Low-Noise Single Photon Avalanche Diodes in 0.15 um CMOS TechnologyPancheri, L. / Stoppa, D. et al. | 2011
- 183
-
Optimized Silicon Photomultipliers with Optical TrenchesPagano, R. / Corso, D. / Lombardo, S. / Libertino, S. / Valvo, G. / Sanfilippo, D. / Russo, A. / Fallica, G. / Pappalardo, A. / Finocchiaro, P. et al. | 2011
- 187
-
High-Speed PNP PIN Phototransistors in a 0.18 μm CMOS ProcessKostov, P. / Gaberl, W. / Zimmermann, H. et al. | 2011
- 191
-
ALD High-k Layer Grating Couplers for Single and Double Slot On-Chip SOI PhotonicsNaiini, M. / Henkel, C. / Malm, G. / Ostling, M. et al. | 2011
- 195
-
Impact of Lateral Charge Migration on the Retention Performance of Planar and 3D SONOS DevicesMaconi, A. / Arreghini, A. / Compagnoni, C.M. / Van Den Bosch, G. / Spinelli, A.S. / Van Houdt, J. / Lacaita, A.L. et al. | 2011
- 199
-
A Study on Poly-Si Thin-Film Transistor (TFT) SONOS Memory Cells with Source/Drain EngineeringTsui, B.-Y. / Lai, R.-Y. et al. | 2011
- 203
-
Variability Analysis of Scaled Poly-Si Channel FinFETs and Tri-Gate Flash Memories for High Density and Low Cost Stacked 3D-Memory ApplicationLiu, Y. / Matsukawa, T. / Endo, K. / Ouchi, S. / Tsukada, J. / Yamauchi, H. / Ishikawa, Y. / Sakamoto, K. / Masahara, M. / Kamei, T. et al. | 2011
- 207
-
Counter-Lightly-Doped-Drain (C-LDD) Structure for Multi-Level Cell (MLC) NOR Flash Memory Free of Drain DisturbCai, Y. / Zhang, X. / Huang, R. et al. | 2011
- 211
-
Novel 4F2 DRAM Cell with Vertical Pillar Transistor(VPT)Chung, H. / Kim, H. / Kim, K. / Kim, J. / Song, K.-W. / Oh, Y.C. / Hwang, Y. / Hong, H. et al. | 2011
- 215
-
Ultra-Thin Flexible 100 V Chipfilm™ N-LDMOSAsif, A. / Richter, H. / Comtesse, C. / Burghartz, J. et al. | 2011
- 219
-
Self-Aligned S/D Regions for InGaAs MOSFETsCzornomaz, L. / El Kazzi, M. / Caimi, D. / Machler, P. / Rossel, C. / Bjoerk, M. / Marchiori, C. / Fompeyrine, J. et al. | 2011
- 223
-
Transport Characterisation of Ge pMOSFETS in Saturation RegimeDiouf, C. / Cros, A. / Monfray, S. / Mitard, J. / Rosa, J. / Boeuf, F. / Ghibaudo, G. et al. | 2011
- 227
-
Effect of Be Segregation on NiSi/Si Schottky Barrier HeightsGudmundsson, V. / Hellstrom, P.-E. / Ostling, M. et al. | 2011
- 231
-
Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 SourceKoyama, M. / Shigemori, N. / Ozawa, K. / Tachi, K. / Kakushima, K. / Nakatsuka, O. / Ohmori, K. / Tsutsui, K. / Nishiyama, A. / Sugii, N. et al. | 2011
- 235
-
N-type doped germanium contact resistance extraction and evaluation for advanced devicesShayesteh, M. / Daunt, C. Ll M. / O'Connell, D. / Djara, V. / White, M. / Long, B. / Duffy, R. et al. | 2011
- 239
-
Electro-Thermal Characterization of SiGe HBTs with Pulse Measurement and Transient SimulationSahoo, A.K. / Fregonese, S. / Weiss, M. / Malbert, N. / Zimmer, T. et al. | 2011
- 243
-
Impact of Isolation Scheme on Thermal Resistance and Collector-Substrate Capacitance of SiGe HBTsYou, S. / Decoutere, S. / Van Huylenbroeck, S. / Sibaja-Hernandez, A. / Venegas, R. / De Meyer, K. et al. | 2011
- 247
-
TCAD Optimization of a Dual N/P-LDMOS TransistorPoli, S. / Reggiani, S. / Sharma, R.K. / Baccarani, G. / Gnani, E. / Gnudi, A. / Denison, M. et al. | 2011
- 251
-
Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 SourceZhao, Q.-T. / Yu, W. / Zhang, B. / Schmidt, M. / Richter, S. / Buca, D. / Hartmann, J.-M. / Luptak, R. / Fox, A. / Bourdelle, K. et al. | 2011
- 255
-
Electrical Results of Vertical Si N-Tunnel FETsVandooren, A. / Leonelli, D. / Rooyackers, R. / Arstila, K. / Groeseneken, G. / Huyghebaert, C. et al. | 2011
- 259
-
Electron-Hole Bilayer Tunnel FET for Steep Subthreshold Swing and Improved ON CurrentLattanzio, L. / De Michielis, L. / Ionescu, A.M. et al. | 2011
- 263
-
CMOS Without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature ApplicationsWessely, F. / Krauss, T. / Schwalke, U. et al. | 2011
- 267
-
Improved Extraction of GIDL in FDSOI Devices for Proper Junction Quality AnalysisXu, C. / Rafhay, Q. / Batude, P. / Romanjek, K. / Le Royer, C. / Tabone, C. / Previtali, B. / Jaud, M.-A. / Garros, X. / Mouis, M. et al. | 2011
- 271
-
Noise performance in strained Si heterojunction bipolar transistorsFjer, M. / Persson, S. / Escobedo-Cousin, Enrique / O'Neill, A.G. et al. | 2011
- 275
-
Extracting the Conduction Band Offset in Strained FinFETs from Subthreshold-Current Measurementsvan Hemert, T. / Kemaneci, B.K. / Hueting, R. / Esseni, D. / van Dal, M. / Schmitz, J. et al. | 2011
- 279
-
Compensation of Externally Applied Mechanical Stress by Stacking of Ultra-Thin ChipsEndler, S. / Rempp, H. / Harendt, C. / Burghartz, J. et al. | 2011
- 283
-
AlGaN/GaN Power Amplifiers for ISM Frequency ApplicationsKrausse, D. / Benkhelifa, F. / Reiner, R. / Quay, R. / Ambacher, O. et al. | 2011
- 287
-
Low Temperature Gate Dielectric Deposition for Recessed AlGaN/GaN MIS-HEMTsSaadat, O. / Palacios, T. et al. | 2011
- 291
-
Trench Depth Optimization for Energy Efficient Discrete Power Trench MOSFETsAlatise, O. / Parker-Allotey, N.-A. / Jennings, M. / Mawby, P. / Petkos, G. / Kennedy, I. et al. | 2011
- 295
-
Octagonal MOSFET: Reliable Device for Low Power Analog ApplicationsJoly, Y. / Lopez, L. / Portal, J.-M. / Aziza, H. / Masson, P. / Ogier, J.-L. / Bert, Y. / Julien, F. / Fornara, P. et al. | 2011
- 299
-
An Investigation on Steep-Slope and Low-Power Nanowire FETGnani, E. / Maiorano, P. / Reggiaini, S. / Gnudi, A. / Baccarani, G. et al. | 2011
- 303
-
High-Frequency Analog GNR-FET Design CriteriaImperiale, I. / Gnudi, A. / Gnani, E. / Reggiani, S. / Baccarani, G. et al. | 2011
- 307
-
Phonon Limited Uniform Transport in Bilayer Graphene TransistorsPaussa, A. / Bresciani, M. / Esseni, D. / Palestri, P. / Selmi, L. et al. | 2011
- 311
-
Accumulation-Mode GAA Si NW nFET with Sub-5 nm Cross-Section and High Uniaxial Tensile StrainNajmzadeh, M. / Bouvet, D. / Grabinski, W. / Ionescu, A.M. et al. | 2011
- 315
-
Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-TransistorsCao, J. / Ionescu, A.M. et al. | 2011
- 319
-
Gas Sensors Based on Silicon Chip-to-Chip Synthesis of Tin Oxide NanowiresMutinati, G.C. / Brunet, E. / Maier, T. / Steinhauer, S. / Koeck, A. et al. | 2011
- 323
-
Nanomagnetic Logic: Demonstration of Directed Signal Flow for Field-Coupled Computing DevicesBreitkreutz, S. / Kiermaier, J. / Ju, X. / Csaba, G. / Schmitt-Landsiedel, D. / Becherer, M. et al. | 2011
- 327
-
A Low Cost Multi Quantum SiGe/Si/Schottky Structure for High Performance IR DetectorsKolahdouz, M. / Ostling, M. / Radamson, H. et al. | 2011
- 331
-
Characterization of Large-Scale Non-Uniformities in a 20k TDC/SPAD Array Integrated in a 130nm CMOS ProcessVeerappan, C. / Richardson, J. / Walker, R. / Li, D.U. / Fishburn, M. / Stoppa, D. / Borghetti, F. / Maruyama, Y. / Gersbach, M. / Henderson, R. et al. | 2011
- 335
-
High Mobility Channel from the Prospective of Random Telegraph NoiseCheung, K. / Campbell, J. / Oates, A. et al. | 2011
- 339
-
Accurate Measurements of the Charge Pumping Current Due to Individual MOS Interface Traps and Interactions in the Carrier Capture/Emission ProcessesTsuchiya, T. et al. | 2011
- 343
-
A Novel Technique for Extraction of Thermal Conductivity in Metallic Thin FilmsZong, Z.-X. / Qiu, Z.-J. / Liu, R. et al. | 2011
- 347
-
Numerical Analysis of a Novel MTJ Stack for High Readability and WritabilityRaychowdhury, A. / Augustine, C. / Somasekhar, D. / Tschanz, J. / Roy, K. / De, V. et al. | 2011
- 351
-
EM-TCAD Solving from 0-100 THz: a New Implementation of an Electromagnetic SolverChen, A. / Schoenmaker, W. / Banagaaya, N. / Schilders, W. / Wong, N. et al. | 2011
- 355
-
Numerical Analysis of Cosmic Radiation-Induced Failures in Power DiodesWeiss, C. / Aschauer, S. / Wachutka, G. / Hartl, A. / Hille, F. / Pfirsch, F. et al. | 2011
- 359
-
High-Quality p+n Ge Diodes Selectively Grown on Si with a Sub-300nm Transition RegionSammak, A. / de Boer, W.D. / Qi, L. / Nanver, L.K. et al. | 2011
- 363
-
Gold-Doped High-Resistivity Czochralski-Silicon for Integrated Passive Devices and 3D IntegrationAbuelgasim, A. / Mallik, K. / de Groot, K. / Ashburn, P. et al. | 2011
- 367
-
Efficent Low Cost Process for Single Step Metal Forming of 3D Interconnected Above-IC InductorsGhannam, A. / Ourak, L. / Bourrier, D. / Viallon, C. / Parra, T. et al. | 2011
- 371
-
Integration of Series-Connected On-Chip Solar Battery in a Triple-Well CMOS LSIHoriguchi, F. et al. | 2011
- 375
-
A Sub-ns Time-gated CMOS Single Photon Avalanche Diode Detector for Raman SpectroscopyNissinen, I. / Nissinen, J. / Lansman, A.-K. / Hallman, L. / Kilpela, A. / Kostamovaara, J. / Kogler, M. / Aikio, M. / Tenhunen, J. et al. | 2011
- 379
-
Two-Stage Trigger Silicon-Controller Rectifier (SCR) for Radio-Frequency (RF) ESD Protection in Nanometer TechnologiesHuang, S.-C. / Lee, J.-H. / Lee, Y.-H. / Chen, K.-H. / Wu, Y.-H. et al. | 2011
- i
-
[Front matter]| 2011