The Research and Development for Collecting, Emitting, and Manipulating Energy (Englisch)
- Neue Suche nach: Li, T.
- Neue Suche nach: Materials Research Society
- Neue Suche nach: Li, T.
- Neue Suche nach: Li, Tingkai
- Neue Suche nach: Materials Research Society
In:
Compound semiconductors for generating, emitting, and manipulating energy: symposium held November 28-December 2, 2011, Boston, Massachusetts, U.S.A. /
;
79-86
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2012
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ISBN:
- Aufsatz (Konferenz) / Print
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Titel:The Research and Development for Collecting, Emitting, and Manipulating Energy
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Beteiligte:
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Kongress:Symposium, Compound semiconductors for generating, emitting, and manipulating energy: symposium held November 28-December 2, 2011, Boston, Massachusetts, U.S.A. / ; 2011 ; Boston, MA
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Erschienen in:MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 1396 ; 79-86
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Verlag:
- Neue Suche nach: Materials Research Society
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Erscheinungsort:Warrendale, Pa.
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Erscheinungsdatum:01.01.2012
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Format / Umfang:8 pages
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Anmerkungen:Symposium O was held November 28 - December 2 at the 2011 MRS Fall Meeting. Includes bibliographical references and index.
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ISBN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Understanding MOCVD Gas Chemistry to Reduce the Cost of Ownership for GaN LED and AsP CPV TechnologiesArmour, E.A. / Mitrovic, B. / Zhang, A. / Ebert, C. / Pophristic, M. / Paranjpe, A. / Materials Research Society et al. | 2012
- 15
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Optimization of the Optical and Electrical Properties of GaN Vertical Light Emitting Diode with Current Block LayerLu, N. / Liu, Z. / Guo, E. / Wang, L. / Melton, A. / Ferguson, I. / Materials Research Society et al. | 2012
- 21
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Enhanced Emission from In~xGa~1~-~xN-based LED Structures Using III-Nitride-based Distributed Bragg ReflectorLee, K. / Kadiyala, A. / Rodak, L.E. / Goswami, R. / Kumbham, V. / Bearce, B.A. / Justice, J. / Peacock, J. / Dawson, J.M. / Hornak, L.A. et al. | 2012
- 27
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Assessment of Transparent Conducting Zinc Oxide as a Tunneling Contact to p-GaNMusunuru, S. / Kumbham, V. / Justice, J. / Lee, K. / Korakakis, D. / Hornak, L.A. / Materials Research Society et al. | 2012
- 35
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Integrated Optoelectronic Devices on SiliconLiang, D. / Bowers, J.E. / Materials Research Society et al. | 2012
- 47
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Mid-Infrared Lead-Salt Surface Emitting Photonic Crystal Laser on SiliconWeng, B. / Li, L. / Qiu, J. / Shi, Z. / Materials Research Society et al. | 2012
- 53
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Cathodoluminescence Characterization of Si-doped Orientation Patterned GaAs CrystalsHortelano, V. / Martinez, O. / Jimenez, J. / Snure, M. / Lynch, C. / Bliss, D. / Materials Research Society et al. | 2012
- 59
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Synthesis and Characterization of Multi-Walled Carbon Nanotubes with Semiconductor Nanoparticles for OptoelectronicsSilva, M.F.O. / Rodrigues, W.N. / Ferlauto, A.S. / Ladeira, L.O. / Pinheiro, C.B. / Miquita, D.R. / Materials Research Society et al. | 2012
- 65
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Influences of Hydrogen Passivation on NIR Photodetection of n-type beta -FeSi~2/p-type Si Heterojunction Photodiodes Fabricated by Facing-targets Direct-current SputteringYamashita, K. / Promros, N. / Iwasaki, R. / Izumi, S. / Yoshitake, T. / Materials Research Society et al. | 2012
- 71
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1.54μm Luminescence of beta -FeSi~2 Grown on Au-coated Si SubstratesAkiyama, K. / Funakubo, H. / Itakura, M. / Materials Research Society et al. | 2012
- 79
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The Research and Development for Collecting, Emitting, and Manipulating EnergyLi, T. / Materials Research Society et al. | 2012
- 87
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ZnO/ZnSe Type II Core-Shell Nanowire Array Solar CellZhang, Y. / Li, D. / Wu, Z. / Zheng, J. / Lin, X. / Zhan, H. / Li, S. / Kang, J. / Bleuse, J. / Grenet, L. et al. | 2012
- 93
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Tailoring of CdS Nano Films Through CBD-Isochronal Synthesis for PV ApplicationsFatehmulla, A. / Aldhafiri, A.M. / Albrithen, H. / Al-Dossari, O. / Hassib, A.M. / Hussein, M.L. / Ambekar, J.D. / Amalnerkar, D.P. / Aslam, M. / Materials Research Society et al. | 2012
- 101
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A Systematic Study of the Thermoelectric Properties of GaN-based Wide Band Gap SemiconductorsHurwitz, E.N. / Kucukgok, B. / Melton, A.G. / Liu, Z. / Lu, N. / Ferguson, I.T. / Materials Research Society et al. | 2012
- 107
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Cost Performance Trade-Off in Thermoelectric Modules with Low Fractional Area CoverageYazawa, K. / Shakouri, A. / Materials Research Society et al. | 2012
- 115
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The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility TransistorsRen, F. / Pearton, S.J. / Liu, L. / Kang, T.-S. / Douglas, E.A. / Chang, C.Y. / Lo, C.-F. / Cullen, D.A. / Zhou, L. / Smith, D.J. et al. | 2012
- 127
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Copper Oxide Edge-Termination for GaN Schottky Barrier Diodes with Low Turn-on VoltageMinoura, Y. / Okamoto, N. / Kanamura, M. / Imada, T. / Ohki, T. / Imanishi, K. / Watanabe, K. / Joshin, K. / Kikkawa, T. / Materials Research Society et al. | 2012
- 133
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Properties of MOCVD-Grown GaN:Gd Films for Spintronic DevicesMelton, A.G. / Liu, Z. / Kucukgok, B. / Lu, N. / Ferguson, I. / Materials Research Society et al. | 2012
- 139
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Performance Comparison and Design Issue on Different GaN Power Transistor StructuresLee, C.-Y. / Hung, C.-C. / Kuo, W.-H. / Chen, Y.-S. / Lee, L.-S. / Yen, C.-T. / Lin, S.-F. / Xuan, R. / Ku, T.-K. / Tsai, M.-J. et al. | 2012
- 147
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Nonlinear Optical Techniques for Characterization of Wide Bandgap Semiconductor Electronic Properties: III-nitrides, SiC, and DiamondsJarasiunas, K. / Aleksiejunas, R. / Malinauskas, T. / Nargelas, S. / Scajev, P. / Materials Research Society et al. | 2012
- 159
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Couplings in GaAs/AlGaAs/Metal Photonic Waveguides with Metallic VariationsShih, M.-M. / Materials Research Society et al. | 2012
- 165
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Optical Characterization of a InGaN/GaN Microcavity with Epitaxial AlInN/GaN Bottom DBRFranke, A. / Bastek, B. / Sterling, S. / August, O. / Petzold, S. / Veit, P. / Christen, J. / Moser, P. / Wieneke, M. / Berger, C. et al. | 2012
- 171
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AlN/GaN Distributed Bragg Reflectors Grown via Metal Organic Vapor Phase Epitaxy using GaN Insertion LayersRodak, L.E. / Peacock, J. / Justice, J. / Korakakis, D. / Materials Research Society et al. | 2012
- 177
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GaN-based Neutron Scintillators with a ^6LiF Conversion LayerMelton, A.G. / Burgett, E. / Hertel, N. / Ferguson, I.T. / Materials Research Society et al. | 2012
- 183
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Effects of Silicon Doping and Threading Dislocation Density on Stress Evolution in AlGaN FilmsRedwing, J.M. / Manning, I.C. / Weng, X. / Eichfeld, S.M. / Acord, J.D. / Fanton, M.A. / Snyder, D.W. / Materials Research Society et al. | 2012
- 193
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Characterization of InGaN and InAlN Epilayers by Microdiffraction X-Ray Reciprocal Space MappingKachkanov, V. / Dolbnya, I.P. / O Donnell, K.P. / Lorenz, K. / Pereira, S. / Martin, R.W. / Edwards, P.R. / Watson, I.M. / Materials Research Society et al. | 2012
- 199
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Infrared Ellipsometry and Near-infrared-to-vacuum-ultraviolet Ellipsometry Study of Free-charge Carrier Properties in In-polar p-type InNSchoche, S. / Hofmann, T. / Sedrine, N.B. / Darakchieva, V. / Wang, X. / Yoshikawa, A. / Schubert, M. / Materials Research Society et al. | 2012
- 205
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Photoluminescencc study of damage introduced in GaN by Ar- and Kr-plasmas etchingNakano, Yoshitaka / Kawakami, Retsuo / Niibe, Masahito / Takeichi, Atsushi / Inaoka, Takeshi / Tominaga, Kikuo et al. | 2012
- 205
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Photoluminescence Study of Damage Introduced in GaN by Ar- and Kr-Plasmas EtchingNakano, Y. / Kawakami, R. / Niibe, M. / Takeichi, A. / Inaoka, T. / Tominaga, K. / Materials Research Society et al. | 2012
- 211
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The Influence of Si Doping to BP(100) Layer on Si(100) by TEMHirai, M. / Nishimura, S. / Nagayoshi, H. / Terashima, K. / Materials Research Society et al. | 2012
- 219
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Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/GaN HeterostructuresRajpalke, M.K. / Bhat, T.N. / Roul, B. / Kumar, M. / Krupanidhi, S.B. / Materials Research Society et al. | 2012
- 225
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Investigating GaSb(001) Dry Etching by ICP-RIE on a Non-Silicon Containing Sample Holder with no Organic GasesAlbrithen, H.A. / Petrich, G.S. / Kolodziejski, L.A. / Salhi, A. / Almuhanna, A.A. / Materials Research Society et al. | 2012
- 231
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Amorphous Silicon Bragg Reflectors Fabricated by Oblique Angle DepositionJang, S.J. / Yeo, C.I. / Lee, Y.T. / Materials Research Society et al. | 2012
- 237
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Manipulating 3C-SiC Nanowire Morphology through Gas Flow DynamicsTeker, K. / Otto, J.M. / Materials Research Society et al. | 2012
- 243
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Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions of GaN Buffer LayersNakano, Y. / Irokawa, Y. / Sumida, Y. / Yagi, S. / Kawai, H. / Materials Research Society et al. | 2012
- 249
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Epitaxial Growth and Characterization of Cubic GaN on BP/Si(100) SubstratesNishimura, S. / Hirai, M. / Terashima, K. / Materials Research Society et al. | 2012
- 255
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InN on GaN Heterostructure Growth by Migration Enhanced Epitaxial Afterglow (MEAglow)Binsted, P.W. / Butcher, K.S.A. / Alexandrov, D. / Terziyska, P. / Georgieva, D. / Gergova, R. / Georgiev, V. / Materials Research Society et al. | 2012
- 261
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Nuclear Spin Polarization by Out-of-plane Spin Injection from Ferromagnet Into an InAs HeterostructureIshikura, T. / Hiraki, T. / Matsuda, T. / Lee, J. / Yoh, K. / Materials Research Society et al. | 2012