Force microscopy utilizing tunnel junction control (Unbekannt)
- Neue Suche nach: Kim, H. S.
- Neue Suche nach: Bryant, P. J.
- Neue Suche nach: Kim, H. S.
- Neue Suche nach: Bryant, P. J.
In:
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A VACUUMS SURFACES AND FILMS
;
10
, 4//1
;
641
;
1992
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Force microscopy utilizing tunnel junction control
-
Beteiligte:Kim, H. S. ( Autor:in ) / Bryant, P. J. ( Autor:in )
-
Erschienen in:
-
Verlag:
- Neue Suche nach: SLACK INCORPORATED
-
Erscheinungsdatum:01.01.1992
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Format / Umfang:641 pages
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Unbekannt
- Neue Suche nach: 621.55
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 621.55 -
Datenquelle:
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- 600
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Nanometer-scale instability at sliding interfaces: Tribological considerations in scanning tunneling microscopyJones, L. A. / Thomas, D. F. et al. | 1992
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Force microscopy utilizing tunnel junction controlKim, H. S. / Bryant, P. J. et al. | 1992
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- 713
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- 737
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Homojunction band discontinuities induced by dipolar intralayers: Al-As in GeMarsi, M. / La Rosa, S. / Hwu, Y. / Margaritondo, G. et al. | 1992
- 744
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Internally detected electron photoexcitation spectroscopy on heterostructuresColuzza, C. / Margaritondo, G. / Neglia, A. / Carluccio, R. et al. | 1992
- 749
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Surface and interface states for GaAs(100) (1 x 1) and (4 x 2)-c(8 x 2) reconstructionsVitomirov, I. M. / Raisanen, A. D. / Finnefrock, A. C. / Viturro, R. E. et al. | 1992
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Enhanced structural and electronic properties of strained Ge(100) films grown by molecular-beam epitaxy with a Sb surfactant layerRioux, D. / Hoechst, H. et al. | 1992
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Interfacial band alignments for LaF~3, NdF~3, and TmF~3 heterojunctions on Si(111)Colbow, K. M. / Gao, Y. / Tiedje, T. / Dahn, J. R. et al. | 1992
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- 802
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- 806
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- 812
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Surface electrical properties of HF-treated Si(100)Huang, L. J. / Lau, W. M. et al. | 1992
- 817
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Carbon and oxygen removal from silicon (100) surfaces by remote plasma cleaning techniquesThomas, R. E. / Mantini, M. J. / Rudder, R. A. / Malta, D. P. et al. | 1992
- 823
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Excimer laser cleaning and processing of Si(100) substrates in ultrahigh vacuum and reactive gasesWatanabe, J. K. / Gibson, U. J. et al. | 1992
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III-V surface processingIngrey, S. et al. | 1992
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- 912
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Etching of thin metal films using a ballistic modelTait, R. N. / Dew, S. K. / Smy, T. / Brett, M. J. et al. | 1992
- 916
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- 930
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Diffuse optical reflectivity measurements on GaAs during molecular-beam epitaxy processingLavoie, C. / Johnson, S. R. / Mackenzie, J. A. / Tiedje, T. et al. | 1992
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In situ real-time ellipsometry for film thickness measurement and controlHenck, S. A. et al. | 1992
- 939
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Monitoring of the aluminum nitride sputtering deposition by soft x-ray emission spectroscopyLegrand, P. B. / Dauchot, J. P. / Hecq, M. et al. | 1992
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- 965
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Electron beam patterning of SiO~2Allen, P. E. / Griffis, D. P. / Radzimski, Z. J. / Russell, P. E. et al. | 1992
- 970
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Synthesis and characterization of SiO~2 films deposited using tetraethylorthosilicate/ozone at low processing pressures (10^-^1 to 10^-^3)Stonnington, K. D. / Hsieh, K. Y. / King, L. L. H. / Bachman, K. J. et al. | 1992
- 974
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Polarization of electronic charge and distortion of surface geometry by a scanning tunneling microscopy tip: Si(100)Huang, Z.-H. / Weimer, M. / Allen, R. E. / Lim, H. et al. | 1992
- 978
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Theoretical studies of clean and hydrogenated diamond (100) by molecular mechanicsYang, Y. L. / D'Evelyn, M. P. et al. | 1992
- 985
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Si(111)(7 x 7) dangling bond contribution to surface recombinationHsu, J. W. P. / Bahr, C. C. / Vom Felde, A. / Downey, S. W. et al. | 1992
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Minority-carrier lifetime and photon recycling in n-GaAsAhrenkiel, R. K. / Keyes, B. M. / Lush, G. B. / Melloch, M. R. et al. | 1992
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Nondestructive evaluation of silicon-on-insulator substrates using x-ray double crystal topographyMa, D. I. / Campisi, G. J. / Qadri, S. B. / Peckerar, M. C. et al. | 1992
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Interfacial reactions in the Co/Si/GaAs and Si/Co/GaAs systemsHsu, C. C. / Jin, G. L. / Ho, J. / Chen, W. D. et al. | 1992
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Limits on the use of tunneling to describe the Pd-Ge ohmic contact to GaAsHerrera-Gomez, A. / Meissner, P. L. / Bravman, J. C. / Spicer, W. E. et al. | 1992
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Influence of monoenergetic surface state occupation on Fermi level pinning of metal-GaAs interfacesDarling, R. B. et al. | 1992
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Kinetics of particle formation in the sputtering and reactive ion etching of siliconYoo, W. J. / Steinbruechel, C. et al. | 1992
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Powder dynamics in very high frequency silane plasmasDorier, J.-L. / Hollenstein, C. / Howling, A. A. / Kroll, U. et al. | 1992
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Plasma particulate contamination control. II. Self-cleaning tool designSelwyn, G. S. / Patterson, E. F. et al. | 1992
- 1060
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Interferometric thermometry measurements of silicon wafer temperatures during plasma processingDonnelly, V. M. / Ibbotson, D. E. / Chang, C.-P. et al. | 1992
- 1065
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Low temperature etch chuck: Modeling and experimental results of heat transfer and wafer temperatureWright, D. R. / Hartman, D. C. / Sridharan, U. C. / Kent, M. et al. | 1992
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Measurements of the Cl atom concentration in radio-frequency and microwave plasmas by two-photon laser-induced fluorescence: Relation to the etching of SiOno, K. / Oomori, T. / Tuda, M. / Namba, K. et al. | 1992
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Frequency effects in silane plasmas for plasma enhanced chemical vapor depositionHowling, A. A. / Dorier, J.-L. / Hollenstein, C. / Kroll, U. et al. | 1992
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Theoretical and experimental study of large aperture low energy e-beam source for semiconductor processingKovalev, A. S. / Mankelevich, Y. A. / Muratov, E. A. / Rakhimov, A. T. et al. | 1992
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Generation of high-density O~2 supermagnetron plasma for highly uniform plasma etchingKinoshita, H. / Nomoto, K. et al. | 1992
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Characterization of a novel microwave stripperPasierb, F. / Ghanbari, A. / Ameen, M. S. / Heinrich, R. S. et al. | 1992
- 1100
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Aluminum-4% Cu interconnect etching in a low-pressure magnetically enhanced reactorNarasimhan, M. / Sasserath, J. / Ghanbari, E. et al. | 1992
- 1106
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Reactive ion etching of HgCdTe with methane and hydrogenElkind, J. L. / Orloff, G. J. et al. | 1992
- 1113
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Flow and transport modeling of a low pressure plasma etching systemBradley, S. G. / Chen, C.-H. / Jasinski, T. J. et al. | 1992
- 1118
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Atomic hydrogen interactions with disordered regions in siliconSrikanth, K. / Ashok, S. et al. | 1992
- 1124
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Reactive ion etching of polyimidesiloxanes in fluorine-containing dischargesJeng, S. / Kwok, H. S. / Tyrell, J. A. et al. | 1992
- 1128
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Ballistic transport-reaction prediction of film conformality in tetraethoxysilane O~2 plasma enhanced deposition of silicon dioxideCale, T. S. / Raupp, G. B. / Gandy, T. H. et al. | 1992
- 1135
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Diagnostics of direct-current-magnetron discharges by the emission-selected computer-tomography techniqueMiyake, S. / Shimura, N. / Makabe, T. / Itoh, A. et al. | 1992
- 1140
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Modeling the uniformity in a magnetron etching systemParanjpe, A. P. / Moslehi, M. M. / Davis, C. J. et al. | 1992
- 1147
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Magnetron etching of GaAs: Etch characteristics and surface characterizationMeyyappan, M. / McLane, G. F. / Cole, M. W. / Laraeu, R. et al. | 1992
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Evaluation of sol-gel processing as a method for fabricating spherical-shell silica aerogel inertial confinement fusion targetsJang, K. Y. / Kim, K. et al. | 1992
- 1158
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D-T and D~2 retention in plastic shellsCollins, G. W. / Sanchez, J. J. / Fearon, E. M. et al. | 1992
- 1164
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Ion microtomography and particle-induced x-ray emission analysis of direct drive inertial confinement fusion targetsAntolak, A. J. / Pontau, A. E. / Morse, D. H. / Weirup, D. L. et al. | 1992
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Impurity and recycling control with gettering in the Advanced Toroidal FacilitySimpkins, J. E. / Mioduszewski, P. K. / Isler, R. C. et al. | 1992
- 1174
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Deposition of deuterium and metals on divertor tiles in the DIII-D tokamakWalsh, D. S. / Doyle, B. L. / Jackson, G. L. et al. | 1992
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TiN film coatings on alumina radio frequency windowsMichizono, S. / Kinbara, A. / Saito, Y. / Yamaguchi, S. et al. | 1992
- 1185
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Simple aluminum gasket for use with both stainless steel and aluminum flangesLangley, R. A. et al. | 1992
- 1188
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Effects of surfaces on H-atom concentration in pulsed and continuous dischargesTserepi, A. D. / Dunlop, J. R. / Preppernau, B. L. / Miller, T. A. et al. | 1992
- 1193
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Appearance mass spectrometry of neutral radicals in radio frequency plasmasSugai, H. / Toyoda, H. et al. | 1992
- 1201
-
Time-resolved measurements of electron and ion concentrations in low-frequency sulfur hexafluoride dischargesUtagikar, A. / Thompson, B. E. et al. | 1992
- 1207
-
Langmuir probe measurements of the electron energy distribution function in radio-frequency plasmasScanlan, J. V. / Hopkins, M. B. et al. | 1992
- 1212
-
Influence of polymer formation on the angular dependence of reactive ion beam etchingBarklund, A. M. / Blom, H.-O. et al. | 1992
- 1217
-
High selectivity electron cyclotron resonance etching of submicron polysilicon gate structuresMa, D. X. / Lin, T.-A. / Chen, C.-H. et al. | 1992
- 1227
-
SiO~2/Si etching with CHF~3 in a high-field magnetronMcNevin, S. C. / Ciampa, N. A. / Miner, J. et al. | 1992
- 1232
-
Electron cycloton resonance etching of aluminum alloys with BCl~3-Cl~2-N~2Marx, W. F. / Ma, D. X. / Chen, C.-H. et al. | 1992
- 1238
-
Magnetically enhanced etching of sub-0.5 m polysilicon gatesBui, S. / Sasserath, J. / Ghanbari, E. et al. | 1992
- 1244
-
Recycling and particle control in DIII-DJackson, G. L. et al. | 1992
- 1252
-
Initial boronization of the DIII-D tokamakPhillips, J. / Hodapp, T. / Holtrop, K. / Jackson, G. L. et al. | 1992
- 1256
-
Plasma-materials interaction issues for the International Thermonuclear Experimental Reactor (ITER)Cohen, S. A. / Mattas, R. F. / Werley, K. A. et al. | 1992
- 1265
-
Ion and neutral energies in a multipolar electron cyclotron resonance plasma sourceKing, G. / Sze, F. C. / Mak, P. / Grotjohn, T. A. et al. | 1992
- 1270
-
Plasma uniformity and power deposition in electron cyclotron resonance etch toolsStevens, J. E. / Huang, Y. C. / Jarecki, R. L. / Cecchi, J. L. et al. | 1992
- 1276
-
Characterization of a large volume electron cyclotron resonance plasma for etching and deposition of materialsGhanbari, A. / Ameen, M. S. / Heinrich, R. S. et al. | 1992
- 1281
-
Investigation of the influence of electromagnetic excitation on electron cyclotron resonance discharge propertiesMak, P. / King, G. / Grotjohn, T. A. / Asmussen, J. et al. | 1992
- 1288
-
Self-consistent numerical model for analyzing thermal layering of liquid mixtures of hydrogen isotopes inside a spherical inertial confinement fusion targetSimpson, E. M. / Kim, K. / Bernat, T. P. et al. | 1992
- 1295
-
Poly-Si etching using electron cyclotron resonance microwave plasma sources with multipole confinementGorbatkin, S. M. / Berry, L. A. / Swyers, J. et al. | 1992
- 1303
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Anisotropic highly selective electron cyclotron resonance plasma etching of polysiliconGadgil, P. K. / Dane, D. / Mantei, T. D. et al. | 1992
- 1307
-
Cryogenic electron cyclotron resonance plasma etchingKi Woong Whang / Seok Hyun Lee / Ho Jun Lee et al. | 1992
- 1313
-
Low temperature etching of silicon trenches with SF~6 in an electron cyclotron resonance reactorWatts, A. J. / Varhue, W. J. et al. | 1992
- 1318
-
Surface damage threshold of Si and SiO~2 in electron-cyclotron-resonance plasmasLee, Y. H. et al. | 1992
- 1325
-
X-ray diagnostics for electron cyclotron resonance processing plasmasCastagna, T. J. / Shohet, J. L. / Ashtiani, K. A. / Hershkowitz, N. et al. | 1992
- 1331
-
Electron-sheath interaction in capacitive radio-frequency plasmasVender, D. / Boswell, R. W. et al. | 1992
- 1339
-
Two-dimensional model of glow discharges for a cylindrical geometryHashiguchi, S. et al. | 1992
- 1344
-
Modeling of magnetron etching dischargesMeyyappan, M. / Govindan, T. R. et al. | 1992
- 1349
-
Numerical model of bombarding ions energy distribution function in magnetron dischargeLukyanova, A. V. / Rakhimov, A. T. / Suetin, N. V. et al. | 1992
- 1352
-
High-power fast-atom beam source and its application to dry etchingShimokawa, F. et al. | 1992
- 1358
-
X-ray photoelectron spectroscopic study of the interaction of low energy carbon ions with GaAs and InPMeharg, P. F. A. / Ogryzlo, E. A. / Bello, I. / Lau, W. M. et al. | 1992
- 1365
-
X-ray photoelectron spectroscopic study of the interactions of fluorine ions with gallium arsenideWilliston, L. R. / Bello, I. / Lau, W. M. et al. | 1992
- 1371
-
Hydrogen based reactive ion etching of zinc sulfideOrloff, G. J. / Elkind, J. L. / Koch, D. et al. | 1992