The prediction of phases in ion beam mixed multilayers (Unbekannt)
- Neue Suche nach: Baumvol, I. J. R.
- Neue Suche nach: Baumvol, I. J. R.
- Neue Suche nach: Andersen, H. H.
- Neue Suche nach: Rehn, L. E.
In:
Beam Interactions with Materials and Atoms
1
;
363
;
1993
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:The prediction of phases in ion beam mixed multilayers
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Beteiligte:
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Erschienen in:NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B ; 80//81, 1 ; 363
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Verlag:
- Neue Suche nach: ELSEVIER
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Erscheinungsdatum:01.01.1993
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Format / Umfang:363 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Unbekannt
- Neue Suche nach: 539.7
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 539.7 -
Datenquelle:
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Inhaltsverzeichnis – Band 80//81, Ausgabe 1
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- 3
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Influence of ionization processes on radiation defect formationAscheron, C. / Biersack, J. P. / Goppelt-Langer, P. / Erxmeyer, J. et al. | 1993
- 7
-
Solid effect on the electronic stopping and application to range estimationNakagawa, S. T. et al. | 1993
- 12
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The effect of high charge states on the stopping and ranges of ions in solidsBiersack, J. P. et al. | 1993
- 16
-
Numerical evaluation of the electronic stopping power for heavy ions in solidsWang, Y.-N. / Ma, T.-C. et al. | 1993
- 20
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Chemical bond effects on the low-energy electronic stopping power of Li and He ions on saturated alcohols, ethers and aminesSoullard, J. / Cruz, S. A. / Cabrera-Trujillo, R. et al. | 1993
- 24
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Double scattering in elastic recoil spectraRepplinger, F. / Stoquert, J. P. / Siffert, P. et al. | 1993
- 28
-
Computer simulation of channeling implantation at high and medium energiesPosselt, M. et al. | 1993
- 33
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Energy loss and equilibrium charge distribution of nitrogen ions transmitted through thin silicon crystalsBentini, G. G. / Bianconi, M. / Nipoti, R. et al. | 1993
- 37
-
Energy loss and straggling of MeV ^4He ions in a Si/Sb multilayer targetNiemann, D. / Oberschachtsiek, P. / Kalbitzer, S. / Zeindl, H. P. et al. | 1993
- 41
-
Electronic stopping of hydrogen ions in graphite and amorphous carbonNecas, V. / Kaeferboeck, W. / Roessler, W. / Bauer, P. et al. | 1993
- 45
-
Kinetic approach to multiple scattering of heavy ions in the channeling regimeMuralev, V. A. et al. | 1993
- 49
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Shell effects observed in exit charge state distributions of 1-30 keV atomic projectiles transiting ultrathin carbon foilsFunsten, H. O. / Barraclough, B. L. / McComas, D. J. et al. | 1993
- 53
-
Range parameters of Au and Cs implanted into BN and SiC filmsFichtner, P. F. P. / Herberts, M. R. / Grande, P. L. / Behar, M. et al. | 1993
- 58
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Channeling effects in high energy ion implantation: Si(N)Berti, M. / Brusatin, G. / Carnera, A. / Gasparotto, A. et al. | 1993
- 62
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Range measurement of boron isotopes in silicon from 600 keV to 2 MeVGoppelt, P. / Biersack, J. P. / Gebauer, B. / Fink, D. et al. | 1993
- 65
-
Electronic stopping effects in Fe~6~0Co~4~0 films irradiated with high energy ionsRiviere, J. P. / Dinhut, J. F. / Paumier, E. / Dural, J. et al. | 1993
- 73
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Collision cascades in Zr~3FeHowe, L. M. / Rainville, M. H. / Phillips, D. / Plattner, H. et al. | 1993
- 80
-
Valence and conduction band electronic distributions in ion beam prepared samplesBelin, E. / Traverse, A. / Sonder, A. et al. | 1993
- 86
-
Radiation-induced disordering and defect production in Cu~3Au and Ni~3Al studied by molecular dynamics simulationDiaz de la Rubia, T. / Caro, A. / Spaczer, M. / Janaway, G. A. et al. | 1993
- 91
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An ion beam mixing model for compound formation: the case of Pd/SiDesimoni, J. / Traverse, A. et al. | 1993
- 94
-
Simulation of ion sputtering of rotating amorphous or polycrystalline solidsWege, S. / Bautsch, M. / Ruebesame, D. / Niedrig, H. et al. | 1993
- 98
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On the efficiency of deposited energy density for ion beam mixing processes with ions implanted during and after thin metal film depositionTashlykov, I. S. / Belyi, I. M. / Bobrovich, O. G. / Kalbitzer, S. et al. | 1993
- 102
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Instability of homogeneous distribution of radiation defects in metals in the case of heavily fluctuating defect productionDevyatko, Y. N. / Makletsov, A. A. / Tronin, V. N. et al. | 1993
- 106
-
Defect distributions in MeV ion bombarded siliconHallen, A. / Svensson, B. G. et al. | 1993
- 110
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Fluence dependent concentration of low-energy Ga implanted in SiGnaser, H. / Steltmann, J. / Oechsner, H. et al. | 1993
- 115
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Self-organizing processes in metals by low-energy ion beamsTereshko, I. V. / Khodyrev, V. I. / Tereshko, V. M. / Lipsky, E. A. et al. | 1993
- 120
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Ion-beam induced atomic transport at the Sb/Ni interfaceShi, F. / Weber, T. / Bolse, W. / Lieb, K. P. et al. | 1993
- 124
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Ion monitoring of ion beam dynamic mixing processChayahara, A. / Kiuchi, M. / Mokuno, Y. / Horino, Y. et al. | 1993
- 128
-
Damage profiles in MgO single crystals after krypton implantationFriedland, E. et al. | 1993
- 132
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Giant radiation damage produced by the impact of heavy molecular onto silicon single crystalCerofolini, G. F. / Bertoni, S. / Meda, L. / Balboni, R. et al. | 1993
- 137
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A refined model of the interface mixing in local thermal spikesBolse, W. et al. | 1993
- 142
-
Investigation of thin films by high-energy ERDAGoppelt, P. / Biersack, J. P. / Gebauer, B. / Fink, D. et al. | 1993
- 146
-
Time and energy dependent recoil distributions in mixturesBrasure, L. W. / Prinja, A. K. et al. | 1993
- 151
-
The ultimate depth resolution in SIMS profiling: low-energy ion beam mixing of Au-Pt interfaceLikonen, J. / Hautala, M. / Koponen, I. et al. | 1993
- 159
-
Atomic transport in ion mixed Pd/Co bilayerChae, K. H. / Jang, H. G. / Song, J. H. / Woo, J. J. et al. | 1993
- 163
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Ion beam mixing isotopic silver bilayers by 200 keV germaniumKing, B. V. / Jeynes, C. / Webb, R. P. / Kilner, J. A. et al. | 1993
- 167
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Ion beam mixing of ceramic/metal interfacesCorts, T. / Traverse, A. / Bolse, W. et al. | 1993
- 172
-
Computer simulation of point-defect distributions generated by ion implantationJaraiz, M. / Arias, J. / Rubio, J. E. / Bailon, L. A. et al. | 1993
- 176
-
Lattice location and annealing studies of heavy ion implanted diamondHofsaess, H. / Restle, M. / Wahl, U. / Recknagel, E. et al. | 1993
- 180
-
Lattice location of Er in GaAs and Al~0~.~5Ga~0~.~5As layers grown by MBE on (100) GaAs substratesAlves, E. / Da Silva, M. F. / Evans, K. R. / Jones, C. R. et al. | 1993
- 184
-
Mercury implanted into aluminium: temperature and concentration dependence of the substitutional componentKhubeis, I. / Meyer, O. et al. | 1993
- 188
-
Lattice location and migration of lead in ironJagielski, J. / Turos, A. et al. | 1993
- 192
-
Lattice site occupation of iodine implanted into aluminiumHauser, T. / Gerber, R. / Xiong, G. C. / Strehlau, B. et al. | 1993
- 196
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Lattice location of implanted fluorine in diamondSmallman, C. G. / Fearick, R. W. / Derry, T. E. et al. | 1993
- 201
-
-NMR of ^1^2B in Si: a low-dose implantation studyFischer, B. / Seelinger, W. / Frank, H.-P. / Diehl, E. et al. | 1993
- 207
-
Recent advances in ion beam modification of metalsSmidt, F. A. / Hubler, G. K. et al. | 1993
- 217
-
Microscopic characteristics and electrochemical properties of carbon-implanted steels in a non-aqueous acetic acid mediumUeda, Y. / Sekiguchi, A. / Yuasa, M. / Sekine, I. et al. | 1993
- 221
-
Effect of Mg segregation at grain boundaries on corrosion behavior of intermetallic compound Ni~3Al(B)Liu, X. / Jian, B. / Wang, X. / Yang, G. et al. | 1993
- 225
-
Wear resistance of boron nitride coated metalAndoh, Y. / Nishiyama, S. / Sakai, S. / Ogata, K. et al. | 1993
- 229
-
Study of surface modification of WC-Co alloy by nitrogen implantationShi, W. D. / Wen, X. Y. / Liu, J. H. / Ren, C. S. et al. | 1993
- 233
-
Improvement in wear characteristics of steel tools by metal ion implantationRueck, D. M. / Boos, D. / Brown, I. G. et al. | 1993
- 237
-
Metallurgical study on hardness distribution by high energy ion implantation taking notice of solid-solubilityHigeta, K. / Yoshida, Y. / Sato, M. / Motonami, Y. et al. | 1993
- 242
-
Pulsed ion sources for surface modification of materialsKorenev, S. et al. | 1993
- 246
-
Improvement of rolling contact fatigue life of ion implanted M50 steelTorp, B. / Nielsen, B. R. / Dodd, A. / Kinder, J. et al. | 1993
- 250
-
Characteristics of the nitrogen ion implanted intermetallic compound TiAlWang, X. / Yang, Y. / Liu, X. / Zou, S. et al. | 1993
- 254
-
Effects of implantation treatments on micromechanical properties of M2 steelAlonso, F. / Viviente, J. L. / O�ate, J. I. / Torp, B. et al. | 1993
- 258
-
Depth profiles of C, N and O on carbon coated steel surfaces made by IBADKolitsch, A. / Hentschel, E. / Richter, E. et al. | 1993
- 262
-
A comparison of plasma immersion ion implantation with conventional ion implantationKenny, M. J. / Wielunski, L. S. / Tendys, J. / Collins, G. A. et al. | 1993
- 267
-
The pitting corrosion behavior of aluminum ion implanted with titaniumYao, X. Y. / Kumai, C. S. / Devine, T. M. / Fojas, P. B. et al. | 1993
- 271
-
Improvement of physical and chemical properties of steel implanted with Cr^+, Ti^+, Si^+ ionsTashlykov, I. S. / Belyi, I. M. / Bobrovich, O. G. / Tuljev, V. V. et al. | 1993
- 275
-
Electrochemical absorption of hydrogen into N^+, O^+ and Ar^+ implanted palladium electrodesTakahashi, K. / Ueshima, M. / Iwaki, M. et al. | 1993
- 279
-
Electrochemical behavior of titanium implanted with nickel and tantalum ionsSugizaki, Y. / Yasunaga, T. / Satoh, H. et al. | 1993
- 285
-
Aqueous corrosion of ion beam mixed Ta films on 13% chromium steelHuang, N. K. et al. | 1993
- 289
-
High temperature oxidation of ion implanted 2011 aluminium alloyChu, J. W. / Dytlewski, N. / Evans, P. J. / Sood, D. K. et al. | 1993
- 294
-
Ion implantation of Raney copper catalystsDurbach, S. / Mellor, J. / Coville, N. J. / Derry, T. E. et al. | 1993
- 297
-
The effects of Ti implantation on corrosion and adhesion of TiN coated stainless steelBaba, K. / Nagata, S. / Hatada, R. / Daikoku, T. et al. | 1993
- 303
-
Phase formation in iron after high-fluence ion implantationRauschenbach, B. et al. | 1993
- 309
-
CEMS study of ^5^7Fe implantation in nickelMarest, G. / Parellada, J. / Principi, G. / Tosello, C. et al. | 1993
- 313
-
Modification of the thermal behavior of iron-carbonitrides induced by Kr bombardment on nitrogen-implanted low carbon steelFoerster, C. E. / Amaral, L. / Moncoffre, N. / Behar, M. et al. | 1993
- 317
-
Evolution of lead precipitates in ion implanted aluminiumBourdelle, K. K. / Johansen, A. / Schmidt, B. / Andersen, H. H. et al. | 1993
- 323
-
Investigation of buried AIN layers formed by nitrogen implantation into AlLin, C. / Li, Y. / Kilner, J. A. / Chater, R. J. et al. | 1993
- 327
-
Enhanced stability of nitrides in -Fe co-implanted with Cr + N or Al + NKopcewicz, M. / Jagielski, J. / Turos, A. / Gawlik, G. et al. | 1993
- 332
-
Formation of metastable carbide and fractal structure in Co thin films by carbon ion implantationLiu, B. X. / Tao, K. et al. | 1993
- 336
-
Characteristics of tool steel implanted with multi-energy B^+ and single-energy N~2^+ ionsOhtani, S. / Mizutani, Y. / Takagi, T. et al. | 1993
- 340
-
Microstructure and tribology of nitrogen implanted molybdenum and tungstenPalmetshofer, L. / Roedhammer, P. et al. | 1993
- 344
-
Introduction of nitrogen into metals by high intensity pulsed ion beamsPiekoszewski, J. / Langner, J. / Bialoskorski, J. / Kozlowska, B. et al. | 1993
- 348
-
High dose implantation of aluminium into ironReuther, H. / Nikolov, O. / Kruijer, S. / Brand, R. A. et al. | 1993
- 352
-
An investigation of phase formation by high dose silicon ion implantation into nickelRao, Z. / Williams, J. S. / Pogany, A. P. / Sood, D. K. et al. | 1993
- 357
-
Aggregation of iron implants in silverMarest, G. / Jaffrezic, H. / Stanek, J. / Binczycka, H. et al. | 1993
- 363
-
The prediction of phases in ion beam mixed multilayersBaumvol, I. J. R. et al. | 1993
- 370
-
Amorphization of metallic alloys by ion bombardmentZiemann, P. / Miehle, W. / Plewnia, A. et al. | 1993
- 379
-
Amorphous and quasicrystalline AlMn and AlFe phase synthesis by ion beam mixing and related transport propertiesPlenet, J. C. / Perez, A. / Rivory, J. / Laborde, O. et al. | 1993
- 386
-
In situ TEM study of ion induced amorphization at low temperature in Al~3TiJaouen, C. / Denanot, M. F. / Riviere, J. P. / Ruault, M. O. et al. | 1993
- 390
-
On the phase formation during ion beam mixing of Al-TiKyllesbech Larsen, K. / Skovmand, S. / Karpe, N. / Boettiger, J. et al. | 1993
- 394
-
Ion beam mixing of TiC/Fe bilayersGesan, P. / Delafond, J. / Cahoreau, M. / Eymery, J. P. et al. | 1993
- 398
-
The effect of pre- and postimplantation of carbon on the phase formation and surface mechanical properties of an ion beam mixed Fe-Ti multilayered systemHirvonen, J.-P. / Nastasi, M. / Jervis, T. R. / Zocco, T. G. et al. | 1993
- 404
-
X-ray diffraction study of residual stress modification in Cu/W superlattices irradiated by light and heavy ionsBadawi, K. F. / Goudeau, P. / Pacaud, J. / Jaouen, C. et al. | 1993
- 408
-
phase formation and dissolution under ion irradiation in Cu/Pd thin filmsQuan, Z. / Naundorf, V. / Macht, M.-P. / Wollenberger, H. et al. | 1993
- 412
-
Diffusion-induced grain boundary migration during ion beam mixing Au/Cu bilayersAlexander, D. E. / Baldo, P. M. / Rehn, L. E. et al. | 1993
- 417
-
Mixing effect of Fe/Ni multilayers of overall Fe~6~5Ni~3~5 compositionTosello, C. / Ferrari, F. / Brand, R. / Keune, W. et al. | 1993
- 421
-
Construction of free energy diagram and phase formation by ion mixing in the Ni-Nb systemBai, H. Y. / Zhang, Z. J. / Liu, B. X. et al. | 1993
- 424
-
Amorphization of In/Au-bilayers by low temperature ion beam mixingMiehle, W. / Plewnia, A. / Ziemann, P. et al. | 1993
- 428
-
Effect of ion beam irradiation in amorphous ferromagnetic alloysMatsumoto, N. / Bang, L. / Maeta, H. / Jakubovics, J. P. et al. | 1993
- 432
-
Surface composition changes of CuBe alloys under Ar^+ ion bombardment studied by Auger electron spectroscopyShopov, A. V. / Vichev, R. G. / Karpuzov, D. S. et al. | 1993
- 436
-
Ion beam mixing of Fe/Al multilayers: a CEMS studyAlexandre, J. L. / Vasconcellos, M. A. Z. / Huebler, R. / Teixeira, S. R. et al. | 1993
- 445
-
A comparison of IBAD films for wear and corrosion protection with other PVD coatingsEnsinger, W. / Schroeer, A. / Wolf, G. K. et al. | 1993
- 455
-
RBS and channeling study of the correlation between ion beam mixing and amorphization in a binary metal systemBenkoulal, T. / Jagielski, J. / Thome, L. / Vassent, B. et al. | 1993
- 459
-
Low energy ^1^5N and ^1^4N implantation in chromium analysed by NRA and RBSRose, M. / Baumann, H. / Markwitz, A. / Bethge, K. et al. | 1993
- 463
-
Properties of carbon nitride thin films prepared by ion and vapor depositionChubaci, J. F. D. / Sakai, T. / Yamamoto, T. / Ogata, K. et al. | 1993
- 467
-
Corrosion stability of TiN prepared by ion implantation and PVDHeide, N. / Schultze, J. W. et al. | 1993
- 472
-
Hydride formation in zirconium and titanium as a result of low energy ion bombardmentJackman, J. A. / Carpenter, G. J. C. / McCaffrey, J. et al. | 1993
- 476
-
Defect formation and defect-impurity interaction in the hexagonal transition metals Re and LuKoch, H. / Vianden, R. et al. | 1993
- 480
-
Behavior of nitrogen implanted into Zr at high fluenceMiyagawa, S. / Ikeyama, M. / Saitoh, K. / Nakao, S. et al. | 1993
- 485
-
High dose carbon implantation in nickelZhang, Z. H. / Chow, L. / Tao, Y. K. / Paschke, K. D. et al. | 1993
- 491
-
Phase transformations in Mo under simultaneous implantation of metal and gas ionsTyumentsev, A. N. / Pinzhin, Y. P. / Korotaev, A. D. / Behert, A. E. et al. | 1993
- 496
-
Evolution of profiles of implanted nitrogen in metal bilayersBourdelle, K. K. / Boerma, D. O. et al. | 1993
- 501
-
High dose implantation of yttrium and barium ions into copper: the use of a sacrificial carbon layer for enhanced retentionClapham, L. / Whitton, J. L. / Rueck, D. et al. | 1993
- 507
-
MeV implantation into semiconductorsWilliams, J. S. / Elliman, R. G. / Ridgway, M. C. / Jagadish, C. et al. | 1993
- 514
-
Mechanisms of amorphization in ion implanted crystalline siliconCampisano, S. U. / Coffa, S. / Raineri, V. / Priolo, F. et al. | 1993
- 519
-
Channeling and TEM investigations of pulse electron beam annealed GaAs implanted with PbAlberts, H. W. / Gaigher, H. L. / Bredell, L. J. et al. | 1993
- 523
-
The displacement damage produced in Si by 590 MeV protonsAlurralde, M. / Paschoud, F. / Victoria, M. / Gavillet, D. et al. | 1993
- 528
-
Annealing of defects created in silicon by MeV ion implantationSealy, L. / Barklie, R. C. / Brown, W. L. / Jacobson, D. C. et al. | 1993
- 532
-
Ion implantaion damage and annealing in GaSbCallec, R. / Poudoulec, A. / Salvi, M. / L'Haridon, H. et al. | 1993
- 538
-
Dose rate dependence of the ion-beam-induced epitaxial crystallization in siliconHeera, V. / Koegler, R. / Skorupa, W. / Groetzschel, R. et al. | 1993
- 543
-
Swelling of GaSb at low energies (1.3-14.5 keV)Gauneau, M. / Chaplain, R. / Rupert, A. / Toudic, Y. et al. | 1993
- 548
-
The effect of defects caused by Xe ion bombardment on the structure of Au/GaAs contactsJaroli, E. / Gyulai, J. / Pecz, B. / Veresegyhazy, R. et al. | 1993
- 552
-
Strain distribution in As^+ and Sb^+ ion implanted and annealed <100> SiHorvath, Z. E. / Peto, G. / Zsoldos, E. / Gyulai, J. et al. | 1993
- 556
-
Reduced reverse temperature of ion beam induced amorphization/crystallization for intermittent beam irradiation of silicon?Koegler, R. / Heera, V. / Skorupa, W. / Glaser, E. et al. | 1993
- 559
-
Dynamics of void formation during implantation of Si under self-annealing conditions and their influence on dopant distributionLulli, G. / Merli, P. G. / Migliori, A. / Brusatin, G. et al. | 1993
- 564
-
In situ detection of rearrangement processes during electron beam annealing of ion implanted InPMaurer, C. / Kallweit, R. / Baumann, H. / Bethge, K. et al. | 1993
- 569
-
Distribution of strain in Ge ion implanted silicon measured by high resolution X-ray diffractionPesek, A. / Kastler, P. / Lischka, K. / Palmetshofer, L. et al. | 1993
- 573
-
Defect levels in silicon bombarded with light ionsReisinger, J. / Palmetshofer, L. et al. | 1993
- 578
-
Pulsed UV laser irradiation effect for Sn^+-implanted GaAsShibata, H. / Makita, Y. / Ikeda, T. / Hasegawa, M. et al. | 1993
- 583
-
Near-surface defects formed by MeV ion implantation into siliconSayama, H. / Kinomura, A. / Yuba, Y. / Takai, M. et al. | 1993
- 583
-
Generation rate of point defects in silicon irradiated by MeV ionsSvensson, B. G. / Jagadish, C. / Williams, J. S. et al. | 1993
- 591
-
Annealing behavior of damage in Si-implanted InP studied by piezoelectric detection of photoacoustic signalYoshinaga, H. / Kawai, J. / Agui, T. / Uehara, F. et al. | 1993
- 596
-
The kinetics of self ion amorphization of siliconGoldberg, R. D. / Elliman, R. G. / Williams, J. S. et al. | 1993
- 603
-
Conductivity changes and impurity-defect interactions in ion-implanted amorphous siliconCoffa, S. / Priolo, F. / Poate, J. M. / Glarum, S. H. et al. | 1993
- 607
-
Photon assisted implantation (PAI)Biro, L. P. / Gyulai, J. / Ryssel, H. / Frey, L. et al. | 1993
- 612
-
Analysis of the SiO~2 defects originated by phosphorus implantation in MOS structuresBota, S. A. / Montserrat, J. / Perez-Rodriguez, A. / Morante, J. R. et al. | 1993
- 616
-
Optical investigation of implantation damage in GaAs/AlGaAs quantum wellsKieslich, A. / Straka, J. / Forchel, A. / Stoffel, N. G. et al. | 1993
- 620
-
Paramagnetic defects in silicon irradiated with 40 MeV As ionsDvurechenskii, A. V. / Karanovich, A. A. / Rybin, A. V. / Groetzschel, R. et al. | 1993
- 624
-
X-ray diffraction analysis of damage accumulation due to the nuclear energy loss of 50 keV and 1-2.2 MeV B ions implanted in siliconFabbri, R. / Lulli, G. / Nipoti, R. / Servidori, M. et al. | 1993
- 628
-
TEM study of Si^+, Ge^+ and C^+ implanted siliconKikuchi, Y. / Kase, M. / Kimura, M. / Yoshida, M. et al. | 1993
- 632
-
Electrical and optical characterization of defect levels caused in InGaAs by boron ion implantationYamamura, S. / Kimura, T. / Yugo, S. / Saito, R. et al. | 1993
- 636
-
Disorder in high-dose, high-energy O- and Si-implanted SiEllingboe, S. L. / Ridgway, M. C. et al. | 1993
- 640
-
Gold and platinum accumulation on buried defects in siliconRohr, P. / Grob, J. J. / Siffert, P. et al. | 1993
- 644
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Incorporation of In into Si preamorphized with Si, Ge and SnVianden, R. / Gwilliam, R. / Sealy, B. et al. | 1993
- 647
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Damage distribution in GaAs implanted at elevated temperatureKalitzova, M. / Karpuzov, D. / Pashov, N. / Vitali, G. et al. | 1993
- 653
-
Optical doping of silicon with erbium by ion implantationPolman, A. / Custer, J. S. / Snoeks, E. / Van den Hoven, G. N. et al. | 1993
- 659
-
High energy implantation of ^1^0B and ^1^1B into (100) silicon in channel and in random directionBogen, S. / Gong, L. / Frey, L. / Ryssel, H. et al. | 1993
- 663
-
Radiation defects passivation by neutron irradiation of hydrogen-implanted siliconBolotov, V. V. / Emeksuzyan, V. M. / Plotnikov, G. L. / Vologdin, E. N. et al. | 1993
- 667
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Negative differential resistance in proton-beam modified siliconBolotov, V. V. / Emeksuzyan, V. M. / Plotnikov, G. L. / Vologdin, E. N. et al. | 1993
- 670
-
The activation energy of electrical conduction of ion beam mixed Sb/n-Si Schottky contactsMalherbe, J. B. / Weimer, K. P. / Friedland, E. / Bredell, L. J. et al. | 1993
- 674
-
Codoping effects of As and Xe on ion-beam-induced epitaxial crystallization of SiHasegawa, M. / Kobayashi, N. / Hayashi, N. et al. | 1993
- 679
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An explanation of transient-enhanced diffusion and electrical activation of boron in crystalline silicon during postimplantation annealingJaeger, H. U. et al. | 1993
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Ion implantation of zirconium and hafnium in InP and GaAsKnecht, A. / Kuttler, M. / Scheffler, H. / Wolf, T. et al. | 1993
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Formation and characterization of shallow junctions by through-film ion implantation in GaAsShen, H. L. / Xu, H. L. / Xia, G. Q. / Zou, S. C. et al. | 1993
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Properties of Mn^+-implanted GaAsNiki, S. / Makita, Y. / Yamada, A. / Iida, T. et al. | 1993
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Ion implanted arsenic in siliconNylandsted Larsen, A. / Christensen, B. / Christensen, P. H. / Shiryaev, S. Y. et al. | 1993
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Structural characterization of nitrogen ion implantation into silicon for sensor technologyRomano-Rodriguez, A. / El-Hassani, A. / Samitier, J. / Perez-Rodriguez, A. et al. | 1993
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Structural and optical characterization of implanted and annealed semi-insulating GaAsTrudeau, Y. B. / Ares, R. / Kajrys, G. E. / Gagnon, G. et al. | 1993
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Defect production, annealing and electrical activation in Si^+ implanted InPWendler, E. / Mueller, P. / Bachmann, T. / Wesch, W. et al. | 1993
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High energy ion implantation in GaAsWesch, W. / Wendler, E. et al. | 1993
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Low temperature recrystallization of ion implanted InPMueller, P. / Wesch, W. / Solovyev, V. S. / Gaiduk, P. I. et al. | 1993