Electrical and optical investigations of carbon clusters formed in organic films by ion implantation (Unbekannt)
- Neue Suche nach: Iizuka, M.
- Neue Suche nach: Kuniyoshi, S.
- Neue Suche nach: Kudo, K.
- Neue Suche nach: Tanaka, K.
- Neue Suche nach: Iizuka, M.
- Neue Suche nach: Kuniyoshi, S.
- Neue Suche nach: Kudo, K.
- Neue Suche nach: Tanaka, K.
- Neue Suche nach: Andersen, H. H.
- Neue Suche nach: Rehn, L. E.
In:
Beam Interactions with Materials and Atoms
2
;
1072
;
1993
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Electrical and optical investigations of carbon clusters formed in organic films by ion implantation
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Beteiligte:Iizuka, M. ( Autor:in ) / Kuniyoshi, S. ( Autor:in ) / Kudo, K. ( Autor:in ) / Tanaka, K. ( Autor:in ) / Andersen, H. H. / Rehn, L. E.
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Erschienen in:Beam Interactions with Materials and Atoms , 2 ; 1072NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B ; 80//81, 2 ; 1072
-
Verlag:
- Neue Suche nach: ELSEVIER
-
Erscheinungsdatum:01.01.1993
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Format / Umfang:1072 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
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Sprache:Unbekannt
- Neue Suche nach: 539.7
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 539.7 -
Datenquelle:
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- 729
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Implantation induced changes in quantum well structuresKalish, R. / Feldman, L. C. / Jacobson, D. C. / Weir, B. E. et al. | 1993
- 734
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Intermixing of MeV ion-implanted and annealed AlGaAs/GaAs superlatticesTamura, M. / Hashimoto, A. / Saito, T. et al. | 1993
- 742
-
Ion bombardment of SiO~2/Si and Si measured by in situ X-ray reflectivityChason, E. / Mayer, T. M. / McIlroy, D. / Matzke, C. M. et al. | 1993
- 747
-
Comparison of the effects of ion implantation induced interdiffusion in GaAs/AlGaAs and InGaAs/GaAs single quantum wellsBradley, I. V. / Gillin, W. P. / Homewood, K. P. / Grey, R. et al. | 1993
- 751
-
Regrowth and strain recovery of Sb implanted Si~1~-~xGe~x strained layersAtzmon, Z. / Eizenberg, M. / Zolotoyabko, E. / Hong, S. Q. et al. | 1993
- 755
-
Ion-beam-induced simultaneous epitaxial growth of - and cubic FeSi~2 in Si (100) at 320CDesimoni, J. / Behar, M. / Bernas, H. / Lin, X. W. et al. | 1993
- 759
-
Influence of impurities on ion beam induced TiSi~2 formationDehm, C. / Raum, B. / Kasko, I. / Ryssel, H. et al. | 1993
- 764
-
Ion beam synthesis of buried CrSi~2 layersDudda, C. / Mantl, S. / Dieker, C. / Dolle, M. et al. | 1993
- 768
-
The fabrication of epitaxial Ge~xSi~1~-~x layers by ion implantationElliman, R. G. / Wong, W. C. et al. | 1993
- 773
-
Ion implantation and annealing of Fe for semi-insulating layers formation in InPGasparotto, A. / Carnera, A. / Arzenton, G. / Tromby, M. et al. | 1993
- 777
-
Formation of relaxed Si~1~-~xGe~x layers on SIMOX by high-dose ^7^4Ge ion implantationHollaender, B. / Mantl, S. / Michelsen, W. / Mesters, S. et al. | 1993
- 781
-
A comparison of shallow and deep iron silicide layers fabricated by ion beam synthesisHunt, T. D. / Reeson, K. J. / Gwilliam, R. M. / Homewood, K. P. et al. | 1993
- 786
-
Effect of ion-beam mixing temperature on cobalt silicide formationKasko, I. / Dehm, C. / Frey, L. / Ryssel, H. et al. | 1993
- 790
-
Low-energy ion-beam-induced epitaxial crystallization of GaAsKobayashi, N. / Hasegawa, M. / Hayashi, N. et al. | 1993
- 795
-
On the ion beam synthesis of GaAsSb alloysKozanecki, A. / Groetzschel, R. et al. | 1993
- 798
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X-ray and channeling analysis of ion implanted gallium arsenideKozanecki, A. / Sealy, B. J. / Gwilliam, R. / Kidd, P. et al. | 1993
- 802
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High-dose implantations of Al into Si(111) and Si(100)Daley, R. S. / Musket, R. G. et al. | 1993
- 807
-
High-energy high-dose Ni irradiation of SOI structuresLindner, J. K. N. / Kersten, P. / Te Kaat, E. H. / Henke, S. et al. | 1993
- 813
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Thin buried oxide in implanted siliconMeda, L. / Bertoni, S. / Cerofolini, G. F. / Spaggiari, C. et al. | 1993
- 818
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Epitaxial metal island formation on Si(111) by cluster deposition from a beamJonk, P. / Hector, R. / Wittenberg, F. / Meiwes-Broer, K. H. et al. | 1993
- 822
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Direct formation of device worthy thin film SIMOX structures by low energy oxygen implantationNejim, A. / Li, Y. / Marsh, C. D. / Hemment, P. L. F. et al. | 1993
- 827
-
Reduction of lateral ion straggling for the fabrication of intermixed GaAs/AlGaAs quantum wiresPrins, F. E. / Lehr, G. / Burkard, M. / Schweizer, H. et al. | 1993
- 831
-
Growth and electrical properties of ion implanted FeSi~2 on (111)SiRadermacher, K. / Mantl, S. / Gerthsen, D. / Dieker, C. et al. | 1993
- 835
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MeV In-ion implantation for electrical isolation of p^+-InPRidgway, M. C. / Elliman, R. G. / Hauser, N. et al. | 1993
- 838
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Buried oxide layers formed by oxygen implantation on screened oxide silicon wafers: structural analysisSamitier, J. / Martinez, S. / Perez-Rodriguez, A. / Garrido, B. et al. | 1993
- 842
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Residual stress during local SIMOX process: Raman measurement and simulationSeidl, A. / Takai, M. / Sayama, H. / Haramura, K. et al. | 1993
- 846
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High-dose mixed Ga/As and Ga/P ion implantations in silicon single crystalsShiryaev, S. Y. / Nylandsted Larsen, A. et al. | 1993
- 851
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Segregation of dopants in ion beam synthesised CoSi~2 layersReeson, K. J. / Hunt, T. D. / Gwilliam, R. M. / Sealy, B. J. et al. | 1993
- 857
-
Concentration profiles of high dose MeV oxygen implanted siliconTouhouche, K. / Jackman, J. / Yelon, A. et al. | 1993
- 862
-
Precipitation kinetics in silicon during ion beam synthesis of buried silicide layersTrinkaus, H. / Mantl, S. et al. | 1993
- 867
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Ion beam synthesis of ternary (Fe~1~-~xCo~x)Si~2Wieser, E. / Panknin, D. / Skorupa, W. / Querner, G. et al. | 1993
- 872
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Production and in-situ analysis of microscale oxide structures in silicon by oxygen implantationWittmaack, K. et al. | 1993
- 877
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Effect of the incidence geometry on the ion induced Ni-silicides surface compositional modificationsVerucchi, R. / Scorzoni, C. / Valeri, S. et al. | 1993
- 881
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Interface structure during ion-beam-induced epitaxial crystallization of siliconCuster, J. S. / Battaglia, A. / Saggio, M. / Priolo, F. et al. | 1993
- 889
-
Ion implantation effects in silicon carbideMcHargue, C. J. / Williams, J. M. et al. | 1993
- 895
-
Ion beam synthesis of buried metallic and semiconducting silicidesMantl, S. et al. | 1993
- 901
-
Lattice damage in ion implanted silicon-germanium alloysHaynes, T. E. / Holland, O. W. et al. | 1993
- 906
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Ion beam synthesis of CoSi~2 in Si~1~-~xGe~x alloy layers with different Ge concentrationsLauwers, A. / Maex, K. / Vanhellemont, J. / Caymax, M. et al. | 1993
- 910
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Ion implantation of isoelectronic impurities into InPYamada, A. / Makita, Y. / Mayer, K. M. / Iida, T. et al. | 1993
- 915
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Influence of Al and P doping on optical and electrical properties of ion beam synthesized SiCBattaglia, A. / Derst, G. / Kalbitzer, S. et al. | 1993
- 919
-
Ion implantation and rapid thermal annealing of Au-Cd~xHg~1~-~xTe structuresGerasimenko, N. N. / Nesterov, A. A. / Vasil'ev, V. V. et al. | 1993
- 924
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Redistribution of magnesium in InAs during post-implantation annealingGerasimenko, N. N. / Myasnikov, A. M. / Obodnikov, V. I. / Safronov, L. N. et al. | 1993
- 927
-
Ion implantation doping of polycrystalline SiC thin films prepared by PECVDKroetz, G. / Hellmich, W. / Mueller, G. / Derst, G. et al. | 1993
- 931
-
Composition changes in Ar^+ and e^--bombarded SiC: an attempt to distinguish ballistic and chemically guided effectsMiotello, A. / Calliari, L. / Kelly, R. / Laidani, N. et al. | 1993
- 938
-
Disorder creation and annealing in Hg implanted CdTeTraverse, A. / Leo, G. / Alves, J. G. / Almeida, P. M. et al. | 1993
- 943
-
Polytype transitions in ion implanted silicon carbidePezoldt, J. / Kalnin, A. A. / Moskwina, D. R. / Savelyev, W. D. et al. | 1993
- 949
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Thermal stability of Si/CoSi~2 multiple layer systemsSchippel, S. / Witzmann, A. / Lindner, J. K. N. et al. | 1993
- 957
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The contribution of ion-beam techniques to the physics and technology of amorphous semiconductorsMueller, G. et al. | 1993
- 966
-
Environments of ion-implanted dopants in amorphous silicon at various stages of annealingGreaves, G. N. / Dent, A. J. / Dobson, B. R. / Kalbitzer, S. et al. | 1993
- 973
-
In situ analysis of irradiation-induced crystal nucleation in amorphous silicon: a "microscope" for thermodynamic processes in nucleationShin, J. H. / Atwater, H. A. et al. | 1993
- 978
-
Properties of fully implanted amorphous Si~xC~1~-~x:H alloysCompagnini, G. / Calcagno, L. / Foti, G. et al. | 1993
- 982
-
Structural relaxation in amorphous silicon prepared by ion implantationHiroyama, Y. / Motooka, T. / Tokuyama, T. / Wei, L. et al. | 1993
- 986
-
Recrystallization of In and P implanted InPKringhoej, P. / Shiryaev, S. Y. et al. | 1993
- 990
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Enhanced solid phase epitaxial recrystallization of amorphous silicon due to nickel silicide precipitation resulting from ion implantation and annealingKuznetsov, A. Y. / Khodos, I. I. / Mordkovich, V. N. / Vyatkin, A. F. et al. | 1993
- 994
-
Ion-beam-induced epitaxy in B-implanted silicon preamorphized with Ge ionsKuriyama, K. / Takahashi, H. / Shimoyama, K. / Hayashi, N. et al. | 1993
- 998
-
Theory of diffusion processes in implanted siliconAntoncik, E. et al. | 1993
- 1002
-
Studies of reactive ion etching using Colutron hot filament dc plasma ion sourcesBello, I. / Chang, W. H. / Feng, X. H. / Lau, W. M. et al. | 1993
- 1006
-
Study of ion-beam-induced epitaxy in Si by slow positron annihilation and RBS channelingHayashi, N. / Suzuki, R. / Watanabe, H. / Sakamoto, I. et al. | 1993
- 1010
-
Dry and wet etching properties of thermally grown silicon dioxide layer after N^+ ion implantation and annealingKudo, K. / Kuniyoshi, S. / Tanaka, K. et al. | 1993
- 1014
-
X-ray diffraction, Rutherford backscattering and channeling measurements on Pb inclusions in SiMilants, K. / Hendrickx, P. / Pattyn, H. et al. | 1993
- 1021
-
The multi-aspects of ion beam modification of insulatorsDavenas, J. / Thevenard, P. et al. | 1993
- 1028
-
Transport phenomena in implanted electroactive polymersMoliton, A. / Moreau, C. / Moliton, J.-P. / Froyer, G. et al. | 1993
- 1036
-
Ion implantation effects in Al~2O~3: hydration and optical absorptionArnold, G. W. et al. | 1993
- 1040
-
Defect generation and healing in SiC powder subjected to Ar implantationHeuberger, M. / Telle, R. / Petzow, G. et al. | 1993
- 1045
-
Heat-induced versus particle-beam-induced chemistry in polyimideMarletta, G. / Iacona, F. et al. | 1993
- 1050
-
Improvement of surface properties of polymers by ion implantationOechsner, R. / Kluge, A. / Zechel-Malonn, S. / Gong, L. et al. | 1993
- 1055
-
Chemical and energy deposition effects of keV ions on the adhesion of Cu films onto polymersTegen, N. / Wartusch, J. / Merkel, K.-H. et al. | 1993
- 1059
-
RBS study of oxidation processes in polypropylene and polyethylene implanted with fluorine ionsHnatowicz, V. / Havranek, V. / Kvitek, J. / Perina, V. et al. | 1993
- 1063
-
Infrared analysis of the irradiation effects in aromatic polyimide filmsXu, D. / Xu, X. L. / Du, G. D. / Wang, R. et al. | 1993
- 1067
-
Surface modification of polystyrene for improving wettability by ion implantationSuzuki, Y. / Kusakabe, M. / Iwaki, M. et al. | 1993
- 1072
-
Electrical and optical investigations of carbon clusters formed in organic films by ion implantationIizuka, M. / Kuniyoshi, S. / Kudo, K. / Tanaka, K. et al. | 1993
- 1076
-
Modification of conducting polymers by low energy reactive ion beams and their chemical effectsJung, K. G. / Schultze, J. W. / Buchal, C. et al. | 1993
- 1080
-
Characterization of Ag- and W-implanted polyimide filmsIwaki, M. / Yabe, K. / Fukuda, A. / Watanabe, H. et al. | 1993
- 1085
-
On the influence of low energy tantalum ion implantation on indentation fracture and hardness of -alumina single crystalsEnsinger, W. / Nowak, R. et al. | 1993
- 1091
-
TEM-microstructural investigations of ion beam modified ceramics with respect to their macroscopic propertiesFischer, W. / Wolf, G. K. / Ruoff, H. / Katerbau, K.-H. et al. | 1993
- 1097
-
Ion implantation and ion beam assisted deposition onto cemented tungsten carbide and syalonGuzman, L. / Scotoni, I. / Miotello, A. / Elena, M. et al. | 1993
- 1101
-
Microstructural characterization of zirconia films produced by the dual ion beam deposition techniqueHuang, N. K. / Colligon, J. S. / Kheyrandish, H. / Tang, Y. S. et al. | 1993
- 1104
-
Ion beam induced epitaxial crystallization of sapphireZhou, W. / Sood, D. K. / Elliman, R. G. / Ridgway, M. C. et al. | 1993
- 1109
-
Ion irradiation-induced nano-scale polycrystallization of intermetallic and ceramic materialsWang, L. M. / Birtcher, R. C. / Ewing, R. C. et al. | 1993
- 1114
-
High energy heavy ion irradiation effects in -Al~2O~3Canut, B. / Ramos, S. M. M. / Thevenard, P. / Moncoffre, N. et al. | 1993
- 1119
-
Ion beam modification of aromatic polymersShukushima, S. / Nishikawa, S. / Matsumoto, Y. / Hibino, Y. et al. | 1993
- 1123
-
Electrical conductivity in niobium implanted TiO~2 rutileRamos, S. M. M. / Canut, B. / Brenier, R. / Gea, L. et al. | 1993
- 1128
-
Ion beam irradiation effect on solubility of spin-on glass to methanolYanagisawa, J. / Koh, Y.-B. / Gamo, K. et al. | 1993
- 1135
-
Waveguides and waveguide lasers fabricated by ion implantationChandler, P. J. / Townsend, P. D. et al. | 1993
- 1143
-
Processing high-T~c superconductors with GeV heavy ionsMarwick, A. D. / Civale, L. / Krusin-Elbaum, L. / Wheeler, R. et al. | 1993
- 1150
-
Ion implanted optical waveguides in KNbO~3 for efficient blue light second harmonic generationFleuster, M. / Buchal, C. / Fluck, D. / Guenter, P. et al. | 1993
- 1154
-
Composition changes in bombarded oxides and carbides: the distinction between ballistic, chemically guided, and chemically random behaviorKelly, R. / Bertoti, I. / Miotello, A. et al. | 1993
- 1164
-
Irradiation experiments on HTSC thin filmsKroener, T. / Linker, G. / Meyer, O. / Strehlau, B. et al. | 1993
- 1168
-
XPS studies on the charge states of Cr and Cu atoms implanted into -Al~2O~3 and MgO single crystalsFutagami, T. / Aoki, Y. / Yoda, O. / Nagai, S. et al. | 1993
- 1171
-
Modification of the optical spectra of glass by metal ion implantationYao, X. Y. / Fojas, P. B. / Brown, I. G. / Rubin, M. D. et al. | 1993
- 1174
-
Quantitative investigations of the removal of glass material by low energy ion beams with the use of optical interferometryWeiser, M. et al. | 1993
- 1178
-
Hydrogen assisted crystallisation of strontium titanateSimpson, T. W. / Mitchell, I. V. et al. | 1993
- 1182
-
Ion-implanted optical waveguides in zinc tungstateRodman, M. J. / Chandler, P. J. / Townsend, P. D. et al. | 1993
- 1185
-
Incorporation of Nd implanted in strontiumtitanate studied with photoluminescenceTenner, M. G. / Kessener, Y. A. R. R. / Overwijk, M. H. F. et al. | 1993
- 1189
-
Zirconium implantation into oxygen implanted ironTakahashi, J. / Terashima, K. / Iwaki, M. et al. | 1993
- 1192
-
Substrate effects in silver-implanted glassesMazzoldi, P. / Tramontin, L. / Boscolo-Boscoletto, A. / Battaglin, G. et al. | 1993
- 1197
-
Suppression of charge-up on the surface of glass during ion implantation by a large scale ion sourceAndoh, Y. et al. | 1993
- 1203
-
Formation of conductive layers on dielectric substrates by ion bombardmentPichugin, V. F. / Frangulian, T. S. / Kryuchkov, Y. Y. / Feodorov, A. N. et al. | 1993
- 1207
-
Spectroscopic analysis of proton induced fluorescence from cerium doped yttrium aluminum garnetFisher, J. H. / Hollerman, W. A. / Shelby, G. A. / Holland, L. R. et al. | 1993
- 1210
-
Plastic flow induced by ionization processes in ion-damaged MgOBrenier, R. / Canut, B. / Gea, L. / Ramos, S. M. M. et al. | 1993
- 1215
-
Effects of implantation dose on the inhomogeneous broadening of zero phonon lines in LiFBlieden, G. S. / Comins, J. D. / Derry, T. E. et al. | 1993
- 1219
-
Response of oxides to ion bombardment: the difference between inert and reactive ionsBertoti, I. / Kelly, R. / Mohai, M. / Toth, A. et al. | 1993
- 1226
-
Radiation damage in Tb-implanted CaF~2 observed by channeling and luminescence measurementsAono, K. / Kumagai, M. / Iwaki, M. / Aoyagi, Y. et al. | 1993
- 1230
-
Ion synthesis in coatings on glassesDeshkovskaya, A. / Yanishevskii, V. / Gritsai, S. / Lynkov, L. et al. | 1993
- 1233
-
Anomalous fringe pattern of Ag colloid in phosphate glasses by implantationMatsunami, N. / Hosono, H. et al. | 1993
- 1237
-
On the nature and efficiency of colouration of MgF~2 crystals by 100 keV ionsDavidson, A. T. / Raphuthi, A. M. J. / Comins, J. D. / Derry, T. E. et al. | 1993
- 1241
-
Study of Fe:Al~2O~3 ion beam sputtered thin films with various iron contentsThimon, F. / Marest, G. / Moncoffre, N. / Joshi, S. et al. | 1993
- 1245
-
Ion beam modification of Gd~2Ti~2O~7Weber, W. J. / Hess, N. J. et al. | 1993
- 1249
-
Structural modifications of yttrium iron garnet after high-energy heavy ion irradiationsCostantini, J. M. / Ravel, F. / Brisard, F. / Caput, M. et al. | 1993
- 1255
-
Radiation damage and flux pinning in high temperature superconductorsLiu, J. R. / Kulik, J. / Zhao, Y. J. / Chu, W. K. et al. | 1993
- 1259
-
Radiation defects in the oxygen sublattice of UO~2 single crystalsTuros, A. / Matzke, H. / Wielunski, M. / Nowicki, L. et al. | 1993
- 1264
-
Surface morphology changes in ion implanted chalcogenide films after annealingTsvetkova, T. / Balabanov, S. / Amov, B. / Djakov, A. et al. | 1993
- 1271
-
Focused ion beam lithographyMelngailis, J. et al. | 1993
- 1281
-
Plasma synthesis of metallic and composite thin films with atomically mixed substrate bondingBrown, I. G. / Anders, A. / Anders, S. / Dickinson, M. R. et al. | 1993
- 1288
-
Energy spread of a focused ion beam system with a supertipMaisch, T. / Wilbertz, C. / Miller, T. / Kalbitzer, S. et al. | 1993
- 1292
-
Maskless fabrication of contact vias by focused MeV heavy ion beamMokuno, Y. / Horino, Y. / Kinomura, A. / Chayahara, A. et al. | 1993
- 1296
-
Stitching Al films on SiO~2 substrates by Al ion implantationSu, X. W. / Zhang, Q. Y. / Jin, S. / Wang, R. et al. | 1993
- 1300
-
Interfacial properties of ion beam mixed Cu/SiO~2 systemKim, K. S. / Choi, I. S. / Lee, Y. S. / Kim, Y. W. et al. | 1993
- 1304
-
Adhesion enhancement of metallized thin films on alumina ceramics by ion beam mixingHasuyama, H. / Shima, Y. / Hayashi, N. / Sakamoto, I. et al. | 1993
- 1308
-
Development of a crack gauge by using ion beam mixingOhno, S. / Shigenaka, N. / Fuse, M. / Ibe, H. et al. | 1993
- 1313
-
Properties of ErBa~2Cu~3O~7~-~x thin films formed by ionized cluster beam deposition at low pressureShuhara, A. / Ritoh, N. / Takagi, T. / Haraguchi, E. et al. | 1993
- 1316
-
Thermal behavior study of Sb implanted into photoresist filmMaltez, R. L. / Amaral, L. / Behar, M. / Zawislak, F. C. et al. | 1993
- 1320
-
Thin films from energetic cluster impact; experiment and molecular dynamics simulationsHaberland, H. / Insepov, Z. / Karrais, M. / Mall, M. et al. | 1993
- 1324
-
Focused-ion-beam-induced tungsten deposition: theory and experimentOverwijk, M. H. F. / Van den Heuvel, F. C. et al. | 1993
- 1328
-
Transferring Gus gene into intact rice cells by low energy ion beamZengliang, Y. / Jianbo, Y. / Yuejin, W. / Beijiu, C. et al. | 1993
- 1332
-
Effects of H-implantation on the optical stability under photo-irradiation of urushi filmsAwazu, K. / Nishimura, Y. / Ichikawa, T. / Sakamoto, M. et al. | 1993
- 1336
-
High-intensity ionized cluster beams for surface modification: deposition and erosionGspann, J. et al. | 1993
- 1343
-
Advantages of dynamic ion beam mixingKiuchi, M. et al. | 1993
- 1349
-
Effects of Ar ion beam bombardment on the formation of cubic BN in IBEDTanabe, N. / Iwaki, M. et al. | 1993
- 1356
-
Synthesis and properties of microlaminate structures by ion beam assisted depositionWas, G. S. / Jones, J. W. / Kalnas, C. E. / Parfitt, L. J. et al. | 1993
- 1362
-
Electrical characterization of MOS structures fabricated on SF~6 and SF~6 + C~2ClF~5 reactive ion etched siliconCastan, E. / Vicente, J. / Barbolla, J. / Cabruja, E. et al. | 1993
- 1367
-
Etching rate modification in silicon oxide by ion implantation and rapid thermal annealingDominguez, C. / Garrido, B. / Montserrat, J. / Morante, J. R. et al. | 1993
- 1371
-
Surface morphology and epitaxy of -FeSi~2 obtained by ion beam assisted growthRavesi, S. / Terrasi, A. / La Mantia, A. et al. | 1993
- 1376
-
Basic characteristics of chromium nitride films by dynamic ion beam mixingSugiyama, K. / Hayashi, K. / Sasaki, J. / Ichiko, O. et al. | 1993
- 1380
-
The properties of titanium nitride prepared by dynamic ion mixingNagasaka, H. / Tsuchiya, N. / Kiuchi, M. / Chayahara, A. et al. | 1993
- 1384
-
First stages study of high energy ion beam assisted depositionArnault, J. C. / Delafond, J. / Templier, C. / Chaumont, J. et al. | 1993
- 1388
-
Low temperature fabrication of ceramic film by ICVD method using ion beamKiyama, S. / Hirano, H. / Domoto, Y. / Kuramoto, K. et al. | 1993
- 1392
-
IBAD growing of magnetic iron nitride thin filmsHuebler, R. / Teixeira, S. R. / Schreiner, W. H. / Baumvol, I. J. R. et al. | 1993
- 1397
-
The effects of deposition temperature and interlayer thickness on the adhesion of ion-assisted titanium nitride films produced with yttrium metal interlayersJones, A. M. / McCabe, A. R. / Bull, S. J. / Dearnaley, G. et al. | 1993
- 1402
-
Titanium nitride film formation by the dynamic ion beam mixing methodNakagawa, Y. / Ohtani, S. / Nakata, T. / Mikoda, M. et al. | 1993
- 1406
-
Titanium oxide films prepared by dynamic ion mixingSetsuhara, Y. / Aoki, H. / Miyake, S. / Chayahara, A. et al. | 1993
- 1409
-
Microstructural investigations on titanium nitride films formed by medium energy ion beam assisted depositionEnsinger, W. / Rauschenbach, B. et al. | 1993
- 1415
-
Ion beam mixing of Al-AlN multilayers for tribological and corrosion protectionHuebler, R. / Wolf, G. K. / Schreiner, W. H. / Baumvol, I. J. R. et al. | 1993
- 1419
-
Ion implantation assisted epitaxial alignment of oxide thin films prepared by spin-coating of liquid precursorsBraunstein, G. / Paz-Pujalt, G. R. et al. | 1993
- 1423
-
Synthesis of aluminum oxide thin films by ion beam and vapor deposition technologyOgata, K. / Yamaguchi, K. / Kiyama, S. / Hirano, H. et al. | 1993
- 1427
-
Role of ion beam energy for crystalline growth of thin filmsOgata, K. / Andoh, Y. / Fujimoto, F. et al. | 1993
- 1433
-
Ion beam modification and dopant activation in diamondPrins, J. F. et al. | 1993
- 1441
-
Adherence of diamondlike carbon coatings on total joint substrate materialsLankford, J. / Blanchard, C. R. / Agrawal, C. M. / Micallef, D. M. et al. | 1993
- 1446
-
Radiation damage study of polycrystalline CVD and natural type IIA diamonds using Raman and photoluminescence spectroscopiesHan, S. / Prussin, S. G. / Ager, J. W. / Pan, L. S. et al. | 1993
- 1451
-
The effect of carbon and nitrogen implantation on the abrasion resistance of type IIa (110) diamondAnderson, G. C. / Prawer, S. / Johnston, P. / McCulloch, D. et al. | 1993
- 1456
-
Doping of fullerenes by ion implantationKastner, J. / Kuzmany, H. / Palmetshofer, L. / Bauer, P. et al. | 1993
- 1460
-
Structural and chemical bonding investigation of tungsten implanted glassy carbonMcCulloch, D. / Hoffman, A. / Evans, P. J. / Prawer, S. et al. | 1993
- 1464
-
Characterization of hard amorphous carbon films implanted with nitrogen ionsFreire, F. L. / Achete, C. A. / Franceschini, D. F. / Gatts, C. et al. | 1993
- 1468
-
Dynamics of B sublimation from boron doped graphite USB15Schwoerer, R. / Garcia-Rosales, C. / Roth, J. et al. | 1993
- 1472
-
Modification of interfacial characteristics between diamondlike carbon films and substrates by using ion bombardmentHirvonen, J.-P. / Koskinen, J. / Koponen, I. / Likonen, J. et al. | 1993
- 1477
-
X-ray diffraction studies of self-ion irradiated synthetic single crystal diamondMaeta, H. / Haruna, K. / Bang, L. / Ono, F. et al. | 1993
- 1480
-
Cross-sectional transmission electron microscopy investigation of xenon irradiated glassy carbonMcCulloch, D. / Prawer, S. / Hoffman, A. / Sood, D. K. et al. | 1993
- 1485
-
The synthesis and properties of BN films prepared by ion irradiation and vapor depositionNishiyama, S. / Kuratani, N. / Ebe, A. / Ogata, K. et al. | 1993
- 1489
-
Structural characterization of ion implanted HOPG and glass-like carbon by laser Raman spectroscopyWatanabe, H. / Takahashi, K. / Iwaki, M. et al. | 1993
- 1494
-
Fluorine implantation-induced ESR splitting in a-C:H thin filmsWong, S. P. / Peng, S. / Ke, N. / Li, P. et al. | 1993
- 1499
-
Use of ion implantation for improving the adhesion of diamond-like carbon films deposited by means of other techniquesPivin, J. C. / Lee, T. J. / You, J. H. / Park, H. et al. | 1993
- 1502
-
Tribological evaluation of hydrogen-free ion beam deposited diamondlike carbon coatingsLempert, G. D. / Lifshitz, Y. / Rotter, S. / Armini, A. J. et al. | 1993
- 1507
-
Ion stimulated densification of amorphous carbon filmsUllmann, J. / Wolf, G. K. / Moeller, W. et al. | 1993