Si incorporation during molecular beam epitaxy growth of GaAs and preferential attachment of Si atoms at misorientation steps (Unbekannt)
- Neue Suche nach: Daeweritz, L.
- Neue Suche nach: Hagenstein, K.
- Neue Suche nach: Schuetzenduebe, P.
- Neue Suche nach: Daeweritz, L.
- Neue Suche nach: Hagenstein, K.
- Neue Suche nach: Schuetzenduebe, P.
In:
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A VACUUMS SURFACES AND FILMS
;
11
, 4/2
;
1802
;
1993
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ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Si incorporation during molecular beam epitaxy growth of GaAs and preferential attachment of Si atoms at misorientation steps
-
Beteiligte:
-
Erschienen in:
-
Verlag:
- Neue Suche nach: SLACK INCORPORATED
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Erscheinungsdatum:01.01.1993
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Format / Umfang:1802 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Unbekannt
- Neue Suche nach: 621.55
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 621.55 -
Datenquelle:
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Real-time scanning tunneling microscopy of phase transition and faceting on a vicinal Si(111) surfaceSuzuki, M. / Homma, Y. / Hibino, H. / Fukuda, T. et al. | 1993
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- 1830
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