Silicon drift detector; studies about geometry of electrodes and production technology (Englisch)
- Neue Suche nach: Beole, S.
- Neue Suche nach: Bonvicini, V.
- Neue Suche nach: Burger, P.
- Neue Suche nach: Casse, G.
- Neue Suche nach: Corsi, F.
- Neue Suche nach: De Venuto, D.
- Neue Suche nach: Giubellino, P.
- Neue Suche nach: Gramegna, G.
- Neue Suche nach: Kolojvari, A.
- Neue Suche nach: Manzari, V.
- Neue Suche nach: Beole, S.
- Neue Suche nach: Bonvicini, V.
- Neue Suche nach: Burger, P.
- Neue Suche nach: Casse, G.
- Neue Suche nach: Corsi, F.
- Neue Suche nach: De Venuto, D.
- Neue Suche nach: Giubellino, P.
- Neue Suche nach: Gramegna, G.
- Neue Suche nach: Kolojvari, A.
- Neue Suche nach: Manzari, V.
In:
Seventh European Symposium on Semiconductor Detectors
2/3
;
393-396
;
1996
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Silicon drift detector; studies about geometry of electrodes and production technology
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Beteiligte:Beole, S. ( Autor:in ) / Bonvicini, V. ( Autor:in ) / Burger, P. ( Autor:in ) / Casse, G. ( Autor:in ) / Corsi, F. ( Autor:in ) / De Venuto, D. ( Autor:in ) / Giubellino, P. ( Autor:in ) / Gramegna, G. ( Autor:in ) / Kolojvari, A. ( Autor:in ) / Manzari, V. ( Autor:in )
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Erschienen in:Seventh European Symposium on Semiconductor Detectors , 2/3 ; 393-396NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A ; 377, 2/3 ; 393-396
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Verlag:
- Neue Suche nach: ELSEVIER
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Erscheinungsdatum:01.01.1996
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Format / Umfang:4 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 539.7
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 539.7 -
Datenquelle:
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- 177
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Defects at the Si/SiO~2 interface: their nature and behaviour in technological processes and stressFuessel, W. / Schmidt, M. / Angermann, H. / Mende, G. / Flietner, H. et al. | 1996
- 184
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Recombination of nonequilibrium charge carriers in heavy ion tracks in siliconEremin, V. K. / Ilyashenko, I. N. / Strokan, N. B. / Schmidt, B. et al. | 1996
- 191
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Low energy response of silicon pn-junction detectorHartmann, R. / Hauff, D. / Lechner, P. / Richter, R. / Strueder, L. / Kemmer, J. / Krisch, S. / Scholze, F. / Ulm, G. et al. | 1996
- 197
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Modelling the effects of electrical traps in radiation detectorsKandiah, K. et al. | 1996
- 206
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Pair creation energy and Fano factor of silicon in the energy range of soft X-raysLechner, P. / Hartmann, R. / Soltau, H. / Strueder, L. et al. | 1996
- 209
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Detector calibration at the PTB radiometry laboratory at BESSYRabus, H. / Scholze, F. / Thornagel, R. / Ulm, G. et al. | 1996
- 217
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Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons, and pionsFeick, H. / Fretwurst, E. / Lindstroem, G. / Moll, M. et al. | 1996
- 224
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The effect of radiation induced defects on the performance of high resistivity silicon diodesMatheson, J. / Robbins, M. / Watts, S. et al. | 1996
- 228
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Investigations of donor and acceptor removal and long term annealing in silicon with different boron/phosphorus ratiosWunstorf, R. / Bugg, W. M. / Walter, J. / Garber, F. W. / Larson, D. et al. | 1996
- 234
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Effects of deep level defects in semiconductor detectorsLutz, G. et al. | 1996
- 244
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Process- and irradiation-induced defects in silicon devicesClaeys, C. / Simoen, E. / Vanhellemont, J. et al. | 1996
- 258
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Neutron induced defects in silicon detectors characterized by DLTS and TSC methodsFretwurst, E. / Dehn, C. / Feick, H. / Heydarpoor, P. / Lindstroem, G. / Moll, M. / Schuetze, C. / Schulz, T. et al. | 1996
- 265
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Investigation on the N~e~f~f reverse annealing effect using TSC/I-DLTS: relationship between neutron induced microscopic defects and silicon detector electrical degradationsLi, Z. / Li, C. J. / Eremin, V. / Verbitskaya, E. et al. | 1996
- 276
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Pion and proton induced radiation damage to silicon detectorsRiechmann, K. / Knoepfle, K. T. / Pugatch, V. M. et al. | 1996
- 284
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Irradiation tests of double-sided silicon strip detectors optimized for the ATLAS-inner-detector-regionGoessling, C. / Kaiser, B. / Rolf, A. / Wunstorf, R. / Andricek, L. / Hauff, D. / Kemmer, J. / Krisch, S. / Lutz, G. / Richter, R. H. et al. | 1996
- 290
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Damage-induced surface effects in silicon detectorsWunstorf, R. / Feick, H. / Fretwurst, E. / Lindstroem, G. / Lutz, G. / Osius, C. / Richter, R. H. / Rohe, T. / Rolf, A. / Schlichthaerle, P. et al. | 1996
- 298
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Analysis of trapping effects on charge transfer in proton irradiated pn-CCDsMeidinger, N. / Strueder, L. / Holl, P. / Soltau, H. / Zanthier, C. V. et al. | 1996
- 312
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Back-illuminated CCDs made by gas immersion laser dopingVan den Berg, M. L. / Den Boggende, A. J. F. / Bootsma, T. M. V. / Den Herder, J. W. / Jansen, F. A. / De Korte, P. A. J. / Van Zwet, E. J. / Eaton, T. / Ginige, R. et al. | 1996
- 320
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Intensified CCDs as position sensitive neutron detectorsDietze, M. / Felber, J. / Raum, K. / Rausch, C. et al. | 1996
- 325
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Fabrication of large-area CCD detectors on high-purity, float-zone siliconGregory, J. A. / Burke, B. E. / Cooper, M. J. / Mountain, R. W. / Kosicki, B. B. et al. | 1996
- 334
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X-ray spectroscopy using MOS CCDsHolland, A. D. et al. | 1996
- 340
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Performance of the pn-CCD X-ray detector system designed for the XMM satellite missionSoltau, H. / Holl, P. / Kemmer, J. / Krisch, S. / Zanthier, C. V. / Hauff, D. / Richter, R. / Braeuninger, H. / Hartmann, R. / Hartner, G. et al. | 1996
- 346
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Silicon drift detectors for high resolution room temperature X-ray spectroscopyLechner, P. / Eckbauer, S. / Hartmann, R. / Krisch, S. / Hauff, D. / Richter, R. / Soltau, H. / Strueder, L. / Fiorini, C. / Gatti, E. et al. | 1996
- 352
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Silicon drift detector with integrated p-JFET for continuous discharge of collected electrons through the gate junctionBertuccio, G. / Fasoli, L. / Fiorini, C. / Gatti, E. / Longoni, A. / Sampietro, M. / Hauff, D. / Kemmer, J. / Richter, R. et al. | 1996
- 357
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P-type silicon drift detectorsWalton, J. T. / Krofcheck, D. / O'Donnell, R. / Odyniec, G. / Partlan, M. D. / Wang, N. W. et al. | 1996
- 362
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A doublet of 3 in. cylindrical silicon drift detectors in the CERES experimentFaschingbauer, U. / Agakichiev, G. / Baur, R. / Ceretto, F. / Dress, A. / Fraenkel, Z. / Fuchs, C. / Gatti, E. / Glaessel, P. / Hess, F. et al. | 1996
- 367
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A 55 cm^2 cylindrical silicon drift detectorHoll, P. / Rehak, P. / Ceretto, F. / Faschingbauer, U. / Wurm, J. P. / Castoldi, A. / Gatti, E. et al. | 1996
- 375
-
A new silicon drift detector with reduced lateral diffusionCastoldi, A. / Rehak, P. / Holl, P. et al. | 1996
- 381
-
Fast tools for 3-D design problems in semiconductor detectorsCastoldi, A. / Gatti, E. et al. | 1996
- 387
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Development of large linear silicon drift detectors for the STAR experiment at RHICBellwied, R. / Beuttenmueller, R. / Chen, W. / DiMassimo, D. / Dou, L. / Dyke, H. / French, A. / Hall, J. R. / Hoffmann, G. W. / Humanic, T. et al. | 1996
- 393
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Silicon drift detector; studies about geometry of electrodes and production technologyBeole, S. / Bonvicini, V. / Burger, P. / Casse, G. / Corsi, F. / De Venuto, D. / Giubellino, P. / Gramegna, G. / Kolojvari, A. / Manzari, V. et al. | 1996
- 397
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The effect of metal field plates on multiguard structures with floating p^+ guard ringsAvset, B. S. / Evensen, L. et al. | 1996
- 404
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Transparent silicon strip sensors for the optical alignment of particle detector systemsBlum, W. / Kroha, H. / Widmann, P. et al. | 1996
- 409
-
Readout of a Si strip detector with 200 m pitchChochula, P. / Cindro, V. / Jeraj, R. / Macek, S. / Zontar, D. / Krammer, M. / Pernegger, H. / Pernicka, M. / Mariotti, C. et al. | 1996
- 412
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Strip detector design for ATLAS and HERA-B using two-dimensional device simulationRichter, R. H. / Andricek, L. / Gebhart, T. / Hauff, D. / Kemmer, J. / Lutz, G. / Weiss, R. / Rolf, A. et al. | 1996
- 422
-
Double-sided "radiation resistant" microstrip detectors: technology and resultsTonelli, G. / Focardi, E. / Wheadon, R. J. et al. | 1996
- 429
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Radiation hardness of punch-through and FET biased silicon microstrip detectorsWestgaard, T. I. / Avset, B. S. / Ahmed, N. N. / Evensen, L. et al. | 1996
- 435
-
A transimpedance amplifier using a novel current mode feedback loopJarron, P. / Anghinolfi, F. / Delagne, E. / Dabrowski, W. / Scharfetter, L. et al. | 1996
- 440
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CASTOR a VLSI CMOS mixed analog-digital circuit for low noise multichannel counting applicationsComes, G. / Loddo, F. / Hu, Y. / Kaplon, J. / Ly, F. / Turchetta, R. / Bonvicini, V. / Vacchi, A. et al. | 1996
- 446
-
Modeling and characterization of a radiation sensitive p-channel transistor in a floating n-wellErlebach, A. / Streil, T. / Richter, F. / Stephan, R. et al. | 1996
- 453
-
"Gate-to-gate" BJT obtained from the double-gate input JFET to reset charge preamplifiersFazzi, A. / Rehak, P. et al. | 1996
- 459
-
Signal processing in the front-end electronics of BaBar vertex detectorBecker, R. / Grillo, A. / Jacobsen, R. / Johnson, R. / Kipnis, I. / Levi, M. / Luo, L. / Manfredi, P. F. / Nyman, M. / Re, V. et al. | 1996
- 465
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DC and noise performance of C-HFET transistors at low drain current densitiesKarpinski, W. / Luebelsmeyer, K. / Pierschel, G. / Rente, C. / Tenbusch, F. et al. | 1996
- 470
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Low noise gamma-ray and X-ray detectors based on CdTe-materialsAabro, E. / Johansen, G. A. et al. | 1996
- 475
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Detection properties of LEC SI GaAs radiation detectors with the symmetrical contact configurationDubecky, F. / Darmo, J. / Hlavac, S. / Benovic, M. / Pikna, M. / Pelfer, P. G. / Foerster, A. / Kordos, P. et al. | 1996
- 479
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Performance of a coaxial geometry Cd~1~-~xZn~xTe detectorLund, J. C. / Olsen, R. W. / James, R. B. / Van Scyoc, J. M. / Eissler, E. E. / Blakeley, M. M. / Glick, J. B. / Johnson, C. J. et al. | 1996
- 484
-
Improving CdZnTe X-ray detector performance by cooling and rise time discriminationNiemelae, A. / Sipilae, H. / Ivanov, V. I. et al. | 1996
- 487
-
Recent progress in Cd~1~-~xZn~xTe radiation detectorsParnham, K. B. et al. | 1996
- 492
-
Material properties and room-temperature nuclear detector response of wide bandgap semiconductorsSchieber, M. / Lund, J. C. / Olsen, R. W. / McGregor, D. S. / Van Scyoc, J. M. / James, R. B. / Soria, E. / Bauser, E. et al. | 1996
- 496
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Thermal imaging camera with linear Pb~1~-~xSn~xSe-on-Si infrared sensor array and combined JFET/CMOS read-out electronicsMasek, J. / Fach, A. / John, J. / Mueller, P. / Paglino, C. / Zogg, H. / Buttler, W. et al. | 1996
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Photoconductors for 200-400 m: choices and challengesHaegel, N. M. et al. | 1996
- 508
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New developments in the field of silicon detectors for digital radiologyArfelli, F. / Barbiellini, G. / Bonvicini, V. / Cantatore, G. / Castelli, E. / Di Michiel, M. / Longo, R. / Olivo, A. / Poropat, P. / Prest, M. et al. | 1996
- 514
-
The application of high energy ion implantation for silicon radiation detectorsVon Borany, J. / Schmidt, B. / Groetzschel, R. et al. | 1996
- 521
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New pixel detector concepts based on junction field effect transistors on high resistivity siliconCesura, G. / Findeis, N. / Hauff, D. / Hoernel, N. / Kemmer, J. / Klein, P. / Lechner, P. / Lutz, G. / Richter, R. H. / Seitz, H. et al. | 1996
- 529
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X-ray polarimetry- a novel application of CCDsBoegner, M. / Buschhorn, G. / Kotthaus, R. / Oberhuber, R. / Rzepka, M. / Schmidt, K. H. et al. | 1996
- 532
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Studies on a 300 k pixel detector telescopeMiddelkamp, P. / Antinori, F. / Barberis, D. / Becks, K. H. / Beker, H. / Beusch, W. / Burger, P. / Campbell, M. / Cantatore, E. / Catanesi, M. G. et al. | 1996
- 536
-
Performance of large area proximity focused hybrid photo-diodesCalvi, M. / Cattdori, C. / Matteuzzi, C. / Tabarelli de Fatis, T. et al. | 1996
- 539
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Conference summaryDamerell, C. J. S. et al. | 1996