1.5m InGaAsP/InP Strained MQW Gain-coupled DFB Laser with an Improved Periodically Modulated Injection-Carrier Grating (Englisch)
- Neue Suche nach: Luo, Y.
- Neue Suche nach: Wen, G.-P.
- Neue Suche nach: Gan, Y.-N.
- Neue Suche nach: Zhang, K.-Q.
- Neue Suche nach: Sudoh, T. K.
- Neue Suche nach: Sudo, S.
- Neue Suche nach: Nakano, Y.
- Neue Suche nach: Tada, K.
- Neue Suche nach: Luo, Y.
- Neue Suche nach: Wen, G.-P.
- Neue Suche nach: Gan, Y.-N.
- Neue Suche nach: Zhang, K.-Q.
- Neue Suche nach: Sudoh, T. K.
- Neue Suche nach: Sudo, S.
- Neue Suche nach: Nakano, Y.
- Neue Suche nach: Tada, K.
In:
JOURNAL- KOREAN PHYSICAL SOCIETY
;
34
, supp
;
S101-S103
;
1999
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:1.5m InGaAsP/InP Strained MQW Gain-coupled DFB Laser with an Improved Periodically Modulated Injection-Carrier Grating
-
Beteiligte:Luo, Y. ( Autor:in ) / Wen, G.-P. ( Autor:in ) / Gan, Y.-N. ( Autor:in ) / Zhang, K.-Q. ( Autor:in ) / Sudoh, T. K. ( Autor:in ) / Sudo, S. ( Autor:in ) / Nakano, Y. ( Autor:in ) / Tada, K. ( Autor:in )
-
Erschienen in:JOURNAL- KOREAN PHYSICAL SOCIETY ; 34, supp ; S101-S103
-
Verlag:
- Neue Suche nach: KOREAN PHYS SOC
-
Erscheinungsdatum:01.01.1999
-
Format / Umfang:S101-S103
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 530
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 530 -
Datenquelle:
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- S1
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MBE Growth of High Quality Cubic GaN on GaAs SubstrateChen, H. / Liu, H.-F. / Li, Z.-Q. / Liu, S. / Huang, Q. / Zhou, J.-M. et al. | 1999
- S4
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MBE Growth and Characterization of (ZnMg)(SeTe)Chang, J. H. / Cho, M. W. / Makino, H. / Sekiguchi, T. / Yao, T. et al. | 1999
- S7
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Mono-Sized Semiconducting Carbon Nanotubes Formed in 1-nm-Sized Channels of Aluminophosphate Single CrystalTang, Z. K. / Sun, H. D. / Wang, J. / Chen, J. / Li, G. et al. | 1999
- S12
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The Role of Strain-driven In Migration in the Growth of Serf-assembled InAs Quantum Dots on InPYoon, S. / Moon, Y. / Lee, T.-W. / Hwang, H. / Yoon, E. / Kim, Y. D. et al. | 1999
- S16
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Erbium Doping of Silicon Quantum StructuresShin, J. H. / Han, H.-S. / Seo, S.-Y. / Lee, W.-H. et al. | 1999
- S21
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Crossover Between the Adiabatic and Diabatic Limits in Photoinduced Cooperative Structural ChangesKoshino, K. / Ogawa, T. et al. | 1999
- S25
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Analysis of the Surface Photoabsorption Signal During Serf-limited Submonolayer Growth of InP in Metalorganic Chemical Vapor DepositionLee, T.-W. / Hwang, H. / Moon, Y. / Yoon, E. / Kim, Y. D. et al. | 1999
- S28
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Composition Dependent Band Gap Variations of Ga~xIn~1~-~xP~ySb~xAs~1~-~y~-~z Lattice Matched to Different SubstratesShim, K. / Rabitz, H. et al. | 1999
- S32
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Electronic Subbands in In~xGa~1~-~xAs/In~yAl~1~-~yAs Pseudomorphic Heterostructures Grown by GSMBEChen, J. / Li, A. / Ren, Y. / Friedland, K. / Ploog, K. / Chen, Z. / Hu, C. et al. | 1999
- S36
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Comparison of Effective Potential Method and Rayleigh-Ritz Method for the Calculation of Energy Levels of Quantum WiresShim, S. Y. / Lee, Y. K. / Kim, D. C. / Yoo, K. H. / Jung, M. / Kim, T. W. et al. | 1999
- S42
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InAs Quantum Dots in Al(Ga)As Cladding Layers: The Choice for O-dimensional Energy Level Engineering?Lee, U. H. / Lee, D. / Kim, Y. S. / Rhee, S. J. / Leem, Y. A. / Ko, H. S. / Kim, D. H. / Woo, J. C. / Lee, H. G. / Noh, S. K. et al. | 1999
- S46
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Addition Energy Spectra of Semiconductor Quantum DotsLee, I.-H. et al. | 1999
- S50
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Study on the Splitting of E~2-peak in Si-Ge Superlattice by Spectroscopic EllipsometryKim, T. J. / Ko, Y. D. / Kim, Y.-D. / Kwon, N. et al. | 1999
- S54
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Optical Studies on a Series of AlAs/GaAs Short Period SuperlatticesOh, M. S. / Choi, S. G. / Kim, Y. D. / Woo, D. H. / Koh, E. H. / Kim, S. H. / Kang, K. N. / Rhee, S. J. / Woo, J. C. et al. | 1999
- S58
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Pump-probe Measurement of ZnO Epitaxial Thin FilmsYamamoto, A. / Kido, T. / Goto, T. / Chen, Y. / Yao, T. / Kasuya, A. et al. | 1999
- S61
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Optical Study of InAs/GaAs Quantum Dots Using Spectroscopic EllipsometryLee, H. / Seong, E. Z. / Kim, S. M. / Son, M. H. / Min, B. D. / Kim, Y. / Kim, E. K. et al. | 1999
- S64
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Photoelectric Properties by Interface Effect of Organic/Inorganic(CuPc/PbTe) Multilayer Prepared by Pulsed Laser Deposition and Thermal EvaporationLee, H. Y. / Kang, Y. S. / Choi, B. C. / Jeong, J. H. / Tabata, H. / Kawai, T. et al. | 1999
- S69
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Coherent Carrier Dynamics in Semiconductor Superlattices Driven by AC and DC FieldsJe, K.-C. / Kim, Y. et al. | 1999
- S73
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Conductance-Voltage Characteristics of SiGe/Si Quantum-Well StructuresLu, F. / Zhang, S. K. / Jiang, Z. M. / Qin, J. / Hu, D. Z. / Wang, X. et al. | 1999
- S77
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Capacitance-Voltage Characteristics of Quantum Well StructuresMoon, C. R. / Lim, H. / Choe, B.-D. et al. | 1999
- S81
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Coulomb Blockade and Staircases in Self-organized Ag Nanoclusters on Sb-terminated Si(100) SurfacesYun, W. S. / Park, K.-H. / Ha, J. S. / Ko, Y.-J. / Park, K. et al. | 1999
- S85
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Improvements of Short-Channel Effects using Selectively Recess-etched FET (SRFET) with Two Gate RegionsBurm, J. / Choi, J. H. / Kim, D.-H. / Woo, J.-C. et al. | 1999
- S88
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Bistability Properties of AlGaAs/GaAs Modulation-Doped Field Effect Transistors with Embedded InAs Quantum DotsKim, J. W. / Lee, S. H. / Oh, J. E. / Lee, W. S. / Chung, K. W. et al. | 1999
- S92
-
Fabrication and Characterization of Complex-Coupled MQW-DFB Laser with an InGaAs Absorptive GratingOh, D. K. / Kim, M. G. / Kim, H. S. / Hwang, N. / Lee, H. T. / Pyun, K. E. / Park, C. D. et al. | 1999
- S96
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Analysis of QW with Strained Thin Layers for Polarization Insensitive Optical AmplifiersCho, Y. S. / Lee, S. / Kim, S. / Choi, W. Y. et al. | 1999
- S101
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1.5m InGaAsP/InP Strained MQW Gain-coupled DFB Laser with an Improved Periodically Modulated Injection-Carrier GratingLuo, Y. / Wen, G.-P. / Gan, Y.-N. / Zhang, K.-Q. / Sudoh, T. K. / Sudo, S. / Nakano, Y. / Tada, K. et al. | 1999
- S104
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Theoretical Analysis of InGaAsP/InGaAsP Multiple-Quantum-Wells Electroabsorption Modulators for the Application of High-Speed Low Driving Voltage Integrated Light SourceHao, Z.-B. / Guo, C.-L. / Zhang, W.-Y. / Luo, Y. et al. | 1999
- S109
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Coulomb Blockade in Turnstile with Multiple Tunnel JunctionsLee, S. C. / Yu, Y. / Kang, D. S. / Kim, D. C. / Choi, C. K. / Ryu, J. Y. et al. | 1999
- S115
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Magnetophonon Resonance of Quasi-Two-Dimensional Electronic System in Tilted Magnetic FieldsLee, S. C. / Kang, D. S. / Ryu, J. Y. / Kim, S. W. / Ahn, H. S. et al. | 1999
- S121
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Charge Relaxation Resistances and Charge Fluctuations in Mesoscopic ConductorsBuettiker, M. et al. | 1999
- S131
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Avalanche Breakdown of the Quantum Hall EffectsKomiyama, S. / Kawaguchi, Y. et al. | 1999
- S138
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Frenkel-Kontorova Model: Crossover from the Classical to the Quantum MechanicalHu, B. / Li, B. et al. | 1999
- S143
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Metal-Insulator Transition of 2D Electron Gas in a Random Magnetic FieldWang, X. R. / Xie, X. C. / Liu, D. Z. et al. | 1999
- S148
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Superconducting Proximity Effect in Mesoscopic Superconductor/Normal-Metal JunctionsTakayanagi, H. / Antonov, V. N. / Toyoda, E. et al. | 1999
- S155
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Properties of Ultrasmall Superconducting GrainsDi Lorenzo, A. / Falci, G. / Fazio, R. / Giaquinta, G. / Mastellone, A. / Hekking, F. W. J. et al. | 1999
- S161
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Coulomb Blockade without Tunnel JunctionsNazarov, Y. V. et al. | 1999
- S165
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Statistics of Conductance Peaks for Double Quantum DotsKaminski, A. / Glazman, L. I. et al. | 1999
- S170
-
Giant Negative Magneto-Resistance in Non-Magnetic Quantum Dot Arrays in the Nearest-Neighbor Hopping ConductionWang, X. R. et al. | 1999
- S175
-
Shell Structures and Level Statistics of a Quantum DotCha, M.-C. / Yang, S.-R. E. et al. | 1999
- S180
-
Generic Transmission Zeros in Time-reversal Symmetric Single Channel Transport through Quasi-1d SystemsLee, H.-W. et al. | 1999
- S185
-
First- and Second-Order Phase Transitions between Quantum and Classical Regimes for the Escape Rate of a Biaxial Spin SystemKim, G.-H. et al. | 1999
- S189
-
Quantization on a Riemann Surface and Fractional Quantum Hall EffectLee, H. R. et al. | 1999
- S193
-
Voltage Distribution of the Narrow Disordered NIS InterfaceLee, S.-W. / Galaktionov, A. V. / Ryu, C.-M. et al. | 1999
- S199
-
Current Status of Group m-Nitride Semiconductors and Future ProspectsPark, Y.-S. et al. | 1999
- S220
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InGaN/GaN Quantum Well Structures Grown on Bulk GaN and Sapphire SubstratesSakai, S. et al. | 1999
- S224
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Spontaneous Polarization and Piezoelectric Field in Nitride Semiconductor HeterostructuresMorkoc, H. / Cingolani, R. / Lambrecht, W. / Gil, B. / Pavlidis, D. / Jiang, H.-X. / Lin, J. et al. | 1999
- S234
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Development of High-performance III-Nitride-based Semiconductor DevicesRazeghi, M. / Kung, P. / Walker, D. / Monroy, E. / Hamilton, M. / Sandvik, P. et al. | 1999
- S244
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Electron Transport Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapor DepositionCheong, M. G. / Kim, K. S. / Lee, K. J. / Yang, G. M. / Lim, K. Y. / Hong, C.-H. / Suh, E.-K. / Lee, H. J. / Yoshikawa, A. et al. | 1999
- S253
-
Electronic Structures of GaN NanotubesSeung Mi Lee / Young Hee Lee / Yong Gyoo Hwang / Cheol Jin Lee et al. | 1999
- S258
-
Polytypism in Silicon CarbideVlaskina, S. I. / Shin, D. H. et al. | 1999
- S261
-
Admittance Spectroscopy of Mg-doped GaN Grown by Molecular Beam Epitaxy Using RF Nitrogen SourcesKim, D. J. / Ryu, D. Y. / Kim, K. H. / Bojarczuk, N. A. / Karasinski, J. / Guha, S. / Lee, H. G. et al. | 1999
- S265
-
A New Annealing Technique for Semiconductor Layers in Si MOS TransistorsNoguchi, T. et al. | 1999
- S268
-
Gigantic Crystal Grain by Excimer Laser with a Pulse Duration of 200 ns and Its Application to TFTLee, K. H. / Hwang, J. T. / Jung, C. Y. / Ihn, T. H. / Yi, S. J. / Jeon, H. I. / Lee, W. G. / Choi, D. H. / Jang, J. / Zahorski, D. et al. | 1999
- S273
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Pd/Si/Pd/Ti/Au Ohmic Contacts to N-type InGaAs for High Temperature Operation of AlGaAs/GaAs HBTsPark, S. H. / Lee, T.-W. / Lee, J. M. / Min, B.-G. / Park, M.-P. / Kim, J. Y. / Kim, I.-H. et al. | 1999
- S277
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Spot Size Converter Integrated Polarization Insensitive Semiconductor Optical AmplifiersLee, J. S. / Kim, J. R. / Park, S. S. / Park, M. W. / Yu, J. S. / Lee, S. D. / Choo, A. G. / Kim, T. I. et al. | 1999
- S281
-
1550 nm Polarization Insensitive Laterally Tapered Travelling-Wave Semiconductor Laser Amplifiers with a Narrow Circular Beam DivergenceKim, J. R. / Lee, J. S. / Park, S. S. / Park, M. W. / Yu, J. S. / Lee, S. D. / Choo, A. G. / Kim, T. I. / Lee, Y. H. et al. | 1999
- S284
-
Model Study of Internal Field Emission from a Nitrogen-Doped DiamondMoon Sung Chung / Yoon, B.-G. / Lee, H. et al. | 1999
- S290
-
First-principles Calculations for the Vibrational Frequencies of H~2 and H~2^* Complexes in SiKim, Y.-S. / Jin, Y.-G. / Jeong, J.-W. / Chang, K. J. et al. | 1999
- S295
-
Photoluminescence Study of 1018 meV Defect Lines from Ion-implanted SiliconLee, H. / Choi, S.-H. / Seong, E. / Kim, S. M. / Lim, H. J. et al. | 1999
- S299
-
Si/Ge Intermixing Phenomena on Ge/Si(100) SurfaceXiao Yan Zhu / Young Hee Lee / Kim, N.-K. et al. | 1999
- S305
-
Angle-Resolved XPS Investigation of the Fluorine-related Passivation Layer on Etched Al (Cu 1%) Surface Alter SF~6 TreatmentYoon, Y.-S. / Baek, K.-H. / Park, J.-M. / Kwon, K.-H. / Kim, C.-I. / Hwang, I.-G. et al. | 1999
- S310
-
Nonlinear Electrical Transport in Semiconductors: a Nonequilibrium Thermodynamics ApproachDeug Yong Kim / Chang Sub Kim et al. | 1999
- S315
-
Fabrication of 1.3 m Strained InGaAsP/InGaAsP MQW SSC-LD by Selective Area MOCVD GrowthKim, T. J. / Ji, J. K. / Keh, Y. C. / Kim, H. S. / Lee, S. D. / Choo, A. G. / Kim, T. I. et al. | 1999
- S318
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Lifetime Projection Model of Semiconductor Laser Diodes by Thermal DegradationHwang, N. / Kang, S.-G. / Lee, H.-T. / Lee, S.-H. / Joo, G.-C. / Song, M.-K. et al. | 1999
- S322
-
High Speed and Short Channel Transport Characteristics of Scaled Sub-100 nm Gate High Eelection Mobility TransistorsHan, J. et al. | 1999
- S326
-
20 GHz Bandwidth Electro-Absorption Modulator Integrated Distributed Feedback Laser Diode ModulePark, S.-S. / Seung Won Lee / Kim, M.-G. / Min Kyu Song et al. | 1999
- S330
-
Low Voltage Coefficient Double Polysilicon Capacitors Using Thin Dielectrics for Analog Circuit ApplicationsJae Sung Lee / Hoon Soo Park et al. | 1999
- S334
-
Longitudinal Spin-Charge Responses and Collective Modes in Spin-Polarized Quantum DevicesYi, K. S. / Hong, S. P. / Bae, Y. N. / Quinn, J. J. et al. | 1999
- S339
-
The Self-Heating Effect on SOI LIGBTs under the Steady-State ConditionKoo, Y.-D. / Kwon, O.-K. et al. | 1999
- S343
-
Textured ZnO Thin Films by RF Magnetron SputteringGinting, M. / Jeong Chul Lee / Kang, K.-H. / Kim, S.-K. / Kyung Hoon Yoon / Park, I.-J. / Song, J. et al. | 1999
- S347
-
Effect of Probe Contact Resistance on Precision Measurements of Sheet Resistance of Metallized Thin FilmsKwang Min Yu / Kook Jin Kim / Ryu Je Cheon / Jeon Hong Kang et al. | 1999
- S350
-
Effects of RF Plasma Parameters on the Growth of InGaN/GaN Heterostructures Using Plasma-Assisted Molecular Beam EpitaxyShim, K. H. / Paek, M. C. / Kim, K. H. / Hong, S. U. / Cho, K. I. / Lee, H. G. / Kim, J. et al. | 1999
- S355
-
Growth of Polycrystalline GaN and InGaN on Various SubstratesPark, D.-C. / Fujita, S. / Ko, H.-C. et al. | 1999
- S359
-
GaN Epitaxial Growth on a Si(III) Substrate Using Al~2O~3 as an Intermediate LayerOhshima, N. / Wakahara, A. / Ishida, M. / Yonezu, H. / Yoshida, A. / Jung, Y. C. / Miura, H. et al. | 1999
- S364
-
Growth and Characterization of GaN Thin Films on -SiC/Si Substrate Using Rapid Thermal Chemical Vapor DepositionMo, Y. H. / Nahm, K. S. / Yang, S. H. / Kim, K. C. / Lee, W. H. / Suh, E.-K. / Lim, K. Y. et al. | 1999
- S370
-
Dependence of Optical Property on the Defects in Si-doped GaN Grown by Metal Organic Chemical Vapor DepositionKim, C. / Kim, S. / Yi, J. / Choi, Y. / Yoo, T.-K. / Hong, C.-H. et al. | 1999
- S374
-
Time-resolved Photoluminescence Measurements in InGaN/GaN Quantum Wells Grown by MOCVDShin, E.-J. / Song, N. W. / Lee, J. I. / Kim, D. / Ryu, M. Y. / Yu, P. W. / Lee, D. / Choi, Y.-H. / Hong, C.-H. et al. | 1999
- S378
-
Surface Morphology and Optical Properties of Epitaxial Al~xGa~1~-~xNJe Won Kim / Choi, I.-H. / Park, Y. K. / Yong Tae Kim et al. | 1999
- S382
-
Evolution of Crystalline Orientations of Polycrystalline GaN on Indium Tin Oxide/Glass Substrates by NitridationPark, D.-C. / Fujita, S. / Ko, H.-C. et al. | 1999
- S386
-
Tensile Strain Effects on GaN-based Quantum Well LasersYoon, S. J. / Lee, I. et al. | 1999
- S393
-
Donor-acceptor Pair and Free-to-bound Recombinations in Undoped Thick GaN Grown by HVPEPark, C. S. / Yu, P. W. / Kim, S. T. et al. | 1999
- S397
-
Ti/Ag Ohmic Contacts to n-type GaNLee, D. J. / Lee, S. H. / Park, H. C. et al. | 1999
- S401
-
Investigations of Mg-doped GaN grown by Metalorganic Chemical Vapor DepositionOh, C. S. / Kim, K. S. / Lee, K. J. / Choi, J. Y. / Cho, H. K. / Cha, O. H. / Yang, G. M. / Hong, C.-H. / Suh, E.-K. / Lim, K. Y. et al. | 1999
- S405
-
Structural and Optical Characteristics of Si Doped and si-Zn Codoped InGaN Films Grown by Metalorganic Chemical Vapor DepositionLee, K. J. / Kim, K. S. / Oh, C. S. / Choi, S. C. / Yang, G. M. / Hong, C.-H. / Lim, K. Y. / Lee, H. J. et al. | 1999
- S409
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The Effects of the Threading Dislocations on the Qualities in Undoped GaNKim, K. S. / Yang, G. M. / Kim, J.-H. / Lee, K. J. / Oh, C. S. / Lim, D. H. / Hong, C.-H. / Lim, K. Y. / Lee, H. J. / Byun, D. J. et al. | 1999
- S415
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Influence of Epilayer Thickness on Optical Properties in GaN Films Grown by MOCVDJeong, M. S. / Lee, W. H. / Lim, K. Y. / Suh, E.-K. / Lee, H. J. / An, H. Y. et al. | 1999
- S420
-
Degradation Processes Occur on the CdTe Thin Films Solar ElementsMirsagatov, S. A. / Shamirzaev, S. K. / Makhmudov, M. / Muzapharova, S. A. et al. | 1999
- S422
-
A New Switching Characteristics of Highly Doped Multi-Quantum WellSong, C.-K. / Kim, D.-H. et al. | 1999
- S427
-
Comparison of the Pd/Ge/Au/Ni/Au and Pd/Ge/Pd/Ti/Au Ohmic Contacts to N-type InGaAsPark, S. H. / Lee, J. M. / Lee, T.-W. / Park, M.-P. / Park, C. S. / Kim, I.-H. / Kim, J. Y. et al. | 1999
- S432
-
Etching Effect of Carbon Tetrabromide in the Vertical Growth of GaAs during Metalorganic Chemical Vapor DepositionPark, Y. K. / Kim, S.-I. / Son, C.-S. et al. | 1999
- S435
-
Fabrication of AlGaAs/GaAs Heteroface Solar CellsKim, H.-J. / Park, Y. K. / Kim, S.-I. / Eun Kyu Kim / Kim, T.-W. et al. | 1999
- S439
-
Magnetotransport and Charge Transfer Studies on Delta-Modulation-Doped In~xGa~1~-~xAs/Al~yGa~1~-~y-As Strained Single Quantum WellsJung, M. / Lee, D. U. / Kim, T. W. / Yoo, K. H. / Kim, M. D. / Park, H. S. / Kim, D. L. et al. | 1999
- S443
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The Effect of Structural-Phase Transitions in Metalization Layers on Radiation Stability of NbN~x-GaAs ContactsBelyaev, A. A. / Konakova, R. V. / Milenin, V. V. / Hotovy, I. / Piaczenski, G. et al. | 1999
- S447
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Reactions Between Phases and Electronic Processes at the TiB~x (TiN~x)-GaAs Heterostructures InterfacesMilenin, V. V. / Ermolovich, I. B. / Konakova, R. V. / Lyapin, V. G. / Belyaev, A. A. / Voitsikhovskiy, D. I. / Smijan, O. D. / Ivanov, V. N. / Boltovets, N. S. et al. | 1999
- S451
-
Asymmetric Double Quantum Well Structure as a Tunable Detector in the Far-Infrared RangeShin, U. / Shin, N. / Park, M.-J. / Lee, S.-J. et al. | 1999
- S455
-
Determination of Empirical Relationship between Vapor and Solid Phase Composition of GaInAsP in MOVPEDae Kon Oh / Kwang Eui Pyun / Hyun Soo Kim / Choi, I.-H. et al. | 1999
- S458
-
The Splitting of Heavy and Light Holes due to the Indium-Induced Strain in 3-Inch Indium-Alloyed Semi-Insulating GaAs SubstratesKim, J. S. / Park, S. W. / Yu, P. W. et al. | 1999
- S461
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Adsorption and Desorption of P on (001) InP Surface in Metalorganic Chemical Vapor Deposition by Surface PhotoabsorptionLee, T.-W. / Hwang, H. / Moon, Y. / Yooh, E. / Young Dong Kim et al. | 1999
- S464
-
X-ray Scattering Studies on the Strained InGaAs/InP and InGaAsP/InP Multi-quantum WellsOh, M. S. / Woo, D. H. / Koh, E. H. / Yahng, J. S. / Kim, S. H. / Kim, Y. D. et al. | 1999
- S468
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A New Control Method of Lattice Constant and Bandgap Energy for InGaAS/InP Liquid Phase EpitaxySu Hwan Oh / Sang Ku Hwang / Jeong Ho Kim / Hong, T. / Ho Sung Cho et al. | 1999
- S474
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The Growth of InGaAsP/InP MQW Layers Using a Modified Vertical LPE SystemSu Hwan Oh / Sang Ku Hwang / Hong, T. et al. | 1999
- S478
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High Breakdown Voltage P-HEMT Using Single Gate Lithography and Two-Step Gate Recess ProcessYoon, H.-S. / Lee, J.-H. / Park, B.-S. / Lee, C.-W. / Park, C.-S. et al. | 1999
- S482
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The Photoluminescence Study on Thermally Annealed ZnTe/CdTe Heterostructure InterfaceKim, I. J. / Kim, Y. H. / Hong, J. K. / Oh, K. N. / Shin, D. Y. / Kim, E. S. / Choi, I. S. / Chang, G. J. / Kim, S. U. / Parx, M. J. et al. | 1999
- S488
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CdSe/Zn~1~-~xCd~xSe Quantum Wire Aarray Structures Fabricated by Self-Organization TechniqueKo, H.-C. / Park, D.-C. / Fujita, S. et al. | 1999
- S492
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Fabrication and Optical Properties of ZnCdSe/ZnSe Quantum Wires with Strain-Induced Lateral ConfinementKo, H.-C. / Park, D.-C. / Fujita, S. et al. | 1999
- S496
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Dielectric Function of Cd~0~.~5~7Mg~0~.~4~3Te Alloy Film Studied by EllipsometryKim, T. J. / Kim, Y. D. / Yoo, S. D. / Aspnes, D. E. / Kossut, J. et al. | 1999
- S499
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Silicidation of Co/Ti, Co/Nb, and Co/Hf Bilayers on the Si (100) SubstrateKwon, Y. / Lee, C. / Kang, H.-K. / Bae, D.-L. et al. | 1999
- S504
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Thermal Stability of Nb-Si-N and Ta-Si-N as Diffusion Barriers between Cu and SiBae, H.-J. / Shin, Y.-H. / Lee, C. / Kim, J.-C. et al. | 1999
- S510
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Effects of Microwave Power on the Deposition and the Properties of ECR-CVD OxidesKang, M. / Koo, Y. / An, C. et al. | 1999
- S516
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Fabrication and Characterization of the Ultra Shallow Junction Diode with Cobalt Silicide ContactGee Keun Chang / Ho Jung Chang / Woo Yong Ohm et al. | 1999
- S521
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Effects of Attractive Potential between Ultra-Low Energy Boron and Silicons and Boron Diffusion in the Beginning of Annealing: Molecular Dynamics StudyKang, J.-W. / Kang, E.-S. / Hwang, H.-J. et al. | 1999
- S526
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The Formation of CoSi~2 Thin Layer on Crystalline and Amorphous Si Substrates Using CoZr Alloy LayerPark, S. G. / Jeon, H. et al. | 1999
- S532
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MOCVD of Hexagonal Boron Nitride Thin Films on Si(100) Using New Single Source PrecursorsBoo, J.-H. / Lee, S.-B. / Yu, K.-S. / Kim, Y. / Kim, Y.-S. / Park, J. T. et al. | 1999
- S538
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Characteristics of Ultrathin Oxide Grown by High Pressure Oxidation for ULSI Device ApplicationsTae Moon Roh / Dae Woo Lee / Kim, J. / Sang Gi Kim / Jin Gun Koo / Kee Soo Nam / Dae Yong Kim et al. | 1999
- S542
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Effects of Drain Structures on the Hot-Carrier Degradation of High-Voltage LDMOS TransistorsLee, D. W. / Roh, T. M. / Kim, J. / Koo, J. G. / Nam, K. S. / Kim, D. Y. / Park, H. S. et al. | 1999
- S546
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Improved Method for Electro-optical Simulation of Liquid Crystal DisplaysJung, S.-M. / Park, W.-S. et al. | 1999
- S551
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Proposal on the Kickback Voltage Free TFT-LCD for Large-area ApplicationRyu, J. I. / Kim, K. N. / Yoo, K. H. / Bae, B. S. / Jang, J. et al. | 1999
- S555
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Deposition of SiC Thin Films by PECVDCho, N.-I. / Vlaskina, S. / Chang Kyo Kim et al. | 1999
- S558
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Fabrication and Characterization of High Voltage Ni/6H-SiC and Ni/4H-SiC Schottky Barrier DiodesLee, H.-S. / Lee, S.-W. / Dong Hyuk Shin / Park, H.-C. / Jung, W. et al. | 1999
- S562
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Growth of Nanocrystalline Silicon Carbide Thin Films by Plasma Enhanced Chemical Vapor DepositionLee, S. W. / Choi, Y. S. / Moon, J. Y. / Ahn, S. S. / Kim, H. Y. / Stun, D. H. et al. | 1999
- S567
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Monte Carlo Simulation on Electron Transport in Si~1~-~yC~y Alloy LayersIhm, S. H. / Seok, J. H. / Lee, C. H. / Lee, H. J. / Kim, J. Y. / Chun, S. K. et al. | 1999
- S571
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Monte Carlo Study of Impact Ionization in 0.1 m n-MOSFETsLee, I. et al. | 1999
- S577
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Frequency Chirping Characteristics of All Optical Wavelength Converter based on Cross-Gain and Cross-phase Modulation in Semiconductor Optical AmplifiersLee, H. / Kim, Y. / Jeong, J. et al. | 1999
- S582
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Analysis of Four-Wave Mixing in Semiconductor Optical Amplifiers for Optical Frequency Conversion and Optical Phase ConjugationKim, Y. / Lee, H. / Jeong, J. et al. | 1999