Low-energy electron-beam lithography using calixarene (Englisch)
- Neue Suche nach: Tilke, A.
- Neue Suche nach: Vogel, M.
- Neue Suche nach: Simmel, F.
- Neue Suche nach: Kriele, A.
- Neue Suche nach: Blick, R. H.
- Neue Suche nach: Lorenz, H.
- Neue Suche nach: Wharam, D. A.
- Neue Suche nach: Kotthaus, J. P.
- Neue Suche nach: Tilke, A.
- Neue Suche nach: Vogel, M.
- Neue Suche nach: Simmel, F.
- Neue Suche nach: Kriele, A.
- Neue Suche nach: Blick, R. H.
- Neue Suche nach: Lorenz, H.
- Neue Suche nach: Wharam, D. A.
- Neue Suche nach: Kotthaus, J. P.
In:
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER STRUCTURE
;
17
, 4
;
1594-1597
;
1999
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Low-energy electron-beam lithography using calixarene
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Beteiligte:Tilke, A. ( Autor:in ) / Vogel, M. ( Autor:in ) / Simmel, F. ( Autor:in ) / Kriele, A. ( Autor:in ) / Blick, R. H. ( Autor:in ) / Lorenz, H. ( Autor:in ) / Wharam, D. A. ( Autor:in ) / Kotthaus, J. P. ( Autor:in )
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Erschienen in:
-
Verlag:
- Neue Suche nach: AMERICAN INSTITUTE OF PHYSICS
-
Erscheinungsdatum:01.01.1999
-
Format / Umfang:4 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 621.55
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 621.55 -
Datenquelle:
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Specular electron scattering in metallic thin filmsEgelhoff, W. F. / Chen, P. J. / Powell, C. J. / Parks, D. / Serpa, G. / McMichael, R. D. / Martien, D. / Berkowitz, A. E. et al. | 1999
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-
Coherent soft x-ray scattering from InP islands on a semiconductor substrateAdamcyk, M. / Nicoll, C. / Pinnington, T. / Tiedje, T. / Eisebitt, S. / Karl, A. / Scherer, R. / Eberhardt, W. et al. | 1999
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Infrared study of Si surfaces and buried interfacesMilekhin, A. / Friedrich, M. / Hiller, K. / Wiemer, M. / Gessner, T. / Zahn, D. R. T. et al. | 1999
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- 1742
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- 1750
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DX centers in and heterostructuresWieder, H. H. / Sari, Huseyin et al. | 1999
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Behavior of a new ordered structural dopant source in InAs/(001) GaP heterostructuresGopal, V. / Chen, E.-H. / Kvam, E. P. / Woodall, J. M. et al. | 1999
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Nanoelectronic device applications of a chemically stable GaAs structureJanes, D. B. / Kolagunta, V. R. / Batistuta, M. / Walsh, B. L. / Andres, R. P. / Liu, Jia / Dicke, J. / Lauterbach, J. / Pletcher, T. / Chen, E. H. et al. | 1999
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Role of As~4 in Ga diffusion on the GaAs(001)-(2x4) surface: A molecular beam epitaxy-scanning tunneling microscopy studyYang, H. / Labella, V. P. / Bullock, D. W. / Thibado, P. M. et al. | 1999
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-
Role of in Ga diffusion on the GaAs(001)-(2×4) surface: A molecular beam epitaxy-scanning tunneling microscopy studyYang, H. / LaBella, V. P. / Bullock, D. W. / Thibado, P. M. et al. | 1999
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Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlatticesZuo, S. L. / Yu, E. T. / Allerman, A. A. / Biefeld, R. M. et al. | 1999
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Analysis of buried (Al,Ga)As interfaces after molecular-beam epitaxy overgrowthWassermeier, M. / Hey, R. / Höricke, M. / Wiebicke, E. / Kostial, H. et al. | 1999
- 1795
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Mechanistic studies of silicon oxidationWeldon, M. K. / Queeney, K. T. / Chabal, Y. J. / Stefanov, B. B. / Raghavachari, K. et al. | 1999
- 1803
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Constraint theory and defect densities at (nanometer -based dielectric)/Si interfacesPhillips, J. C. et al. | 1999
- 1806
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Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectricsLucovsky, G. / Wu, Y. / Niimi, H. / Misra, V. / Phillips, J. C. et al. | 1999
- 1813
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Suppression of boron transport out of polycrystalline silicon at polycrystalline silicon dielectric interfacesWu, Y. / Niimi, H. / Yang, H. / Lucovsky, G. / Fair, R. B. et al. | 1999
- 1823
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Energy-dependent conduction band mass of determined by ballistic electron emission microscopyLudeke, R. / Schenk, Andreas et al. | 1999
- 1831
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Band offsets for ultrathin and films on Si(111) and Si(100) from photoemission spectroscopyKeister, J. W. / Rowe, J. E. / Kolodziej, J. J. / Niimi, H. / Madey, T. E. / Lucovsky, G. et al. | 1999
- 1836
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Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor depositionMisra, V. / Lazar, H. / Wang, Z. / Wu, Y. / Niimi, H. / Lucovsky, G. / Wortman, J. J. / Hauser, J. R. et al. | 1999
- 1836
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Interracial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor depositionMisra, V. / Lazar, H. / Wang, Z. / Wu, Y. / Niimi, H. / Lucovsky, G. / Wortman, J. J. / Hauser, J. R. et al. | 1999
- 1840
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Remote plasma enhanced chemical vapor deposition in silicon based nanostructuresRack, M. J. / Hilt, L. L. / Vasileska, D. / Ferry, D. K. et al. | 1999
- 1848
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Self-organization in heteroepitaxyMeyer, T. / Klemenc, M. / Graf, T. / von Känel, H. et al. | 1999
- 1852
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Comparison of nanomachined III–V semiconductor substratesGrazulis, L. / Kelly, D. L. / Walker, D. E. / Tomich, D. H. / Eyink, K. G. / Lampert, W. V. et al. | 1999
- 1856
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Properties of nanometer-sized metal–semiconductor interfaces of GaAs and InP formed by an in situ electrochemical processHasegawa, Hideki / Sato, Taketomo / Kaneshiro, Chinami et al. | 1999
- 1867
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Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneitiesMönch, Winfried et al. | 1999
- 1877
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In situ electrical determination of reaction kinetics and interface properties at molecular beam epitaxy grown metal/semiconductor interfacesChen, L. C. / Palmstro/m, C. J. et al. | 1999
- 1884
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Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfacesYang, Y. / Mishra, S. / Cerrina, F. / Xu, S. H. / Cruguel, H. / Lapeyre, G. J. / Schetzina, J. F. et al. | 1999