Superior molecular beam epitaxy (MBE) growth on (N11)A GaAs (Englisch)
- Neue Suche nach: Shtrikman, H.
- Neue Suche nach: Hanein, Y.
- Neue Suche nach: Soibel, A.
- Neue Suche nach: Meirav, U.
- Neue Suche nach: Shtrikman, H.
- Neue Suche nach: Hanein, Y.
- Neue Suche nach: Soibel, A.
- Neue Suche nach: Meirav, U.
In:
JOURNAL OF CRYSTAL GROWTH
;
201-202
, 2-3
;
221-225
;
1999
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Superior molecular beam epitaxy (MBE) growth on (N11)A GaAs
-
Beteiligte:Shtrikman, H. ( Autor:in ) / Hanein, Y. ( Autor:in ) / Soibel, A. ( Autor:in ) / Meirav, U. ( Autor:in )
-
Erschienen in:JOURNAL OF CRYSTAL GROWTH ; 201-202, 2-3 ; 221-225
-
Verlag:
- Neue Suche nach: ELSEVIER SCIENCE DIVISION
-
Erscheinungsdatum:01.01.1999
-
Format / Umfang:5 pages
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 548
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 548 -
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis – Band 201-202, Ausgabe 2-3
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
How molecular beam epitaxy (MBE) began and its projection into the futureCho, A.Y. et al. | 1999
- 8
-
Gas source molecular beam epitaxy as a multi-wafer epitaxial production technologyIzumi, S. / Kouji, Y. / Hayafuji, N. / Sato, K. et al. | 1999
- 12
-
Focused ion molecular-beam epitaxy - a novel approach to 3D device fabrication using simultaneous p- and n-type dopingSazio, P.J.A. / Vijendran, S. / Yu, W. / Beere, H.E. / Jones, G.A.C. / Linfield, E.H. / Ritchie, D.A. et al. | 1999
- 17
-
Noise, drift, and calibration in optical flux monitoring for MBEW. Jackson, A. / Pinsukanjana, P.R. / Gossard, A.C. / Coldren, L.A. et al. | 1999
- 22
-
In situ compositional control of advanced HgCdTe-based IR detectorsAlmeida, L.A. / Dinan, J.H. et al. | 1999
- 26
-
In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss - PhysicsBeaudoin, M. / Adamcyk, M. / Levy, Y. / MacKenzie, J.A. / Ritchie, S. / Tiedje, T. / Gelbart, Z. / Giesen, U. / Kelson, I. et al. | 1999
- 31
-
Real-time control of the MBE growth of InGaAs on InPRoth, J.A. / Chow, D.H. / Olson, G.L. / Brewer, P.D. / Williamson, W.S. / Johs, B. et al. | 1999
- 36
-
Optical pyrometry for in situ control of MBE growth of (Al,Ga)As"1"-"xSb"x compounds on InPBiermann, K. / Hase, A. / Kunzel, H. et al. | 1999
- 40
-
Feedback control of substrate temperature during the growth of near-lattice-matched InGaAs on InP using diffuse reflection spectroscopyJohnson, S.R. / Grassi, E. / Beaudoin, M. / Boonzaayer, M.D. / Tsakalis, K.S. / Zhang, Y.-H. et al. | 1999
- 45
-
Imaging energy analyzer for RHEED: energy filtered diffraction patterns and in situ electron energy loss spectroscopyStaib, P. / Tappe, W. / Contour, J.P. et al. | 1999
- 50
-
Phase-locked substrate rotation: new applications for RHEED in MBE growthBraun, W. / Moller, H. / Zhang, Y.-H. et al. | 1999
- 56
-
Island nucleation and growth during homoepitaxy on GaAs(001)-(2x4)Vvedensky, D.D. / Itoh, M. / Bell, G.R. / Jones, T.S. / Joyce, B.A. et al. | 1999
- 62
-
Mechanism of self-limiting epitaxial growth on nonplanar substratesBiasiol, G. / Kapon, E. et al. | 1999
- 67
-
Modelling of compound semiconductor epitaxyHeyn, C. / Franke, T. / Anton, R. et al. | 1999
- 73
-
First-principles investigation of Ga adatom migration on a GaAs(111)A surfaceTaguchi, A. / Shiraishi, K. / Ito, T. et al. | 1999
- 77
-
Theory of adsorption and diffusion of Si adatoms on H/Si(100) stepped surfaceNara, J. / Sasaki, T. / Ohno, T. et al. | 1999
- 81
-
Surface segregation behavior of Ge in comparison with B, Ga, and Sb: calculations using a first-principles methodUshio, J. / Nakagawa, K. / Miyao, M. / Maruizumi, T. et al. | 1999
- 85
-
Evaporation and step edge diffusion in MBESchinzer, S. / Sokolowski, M. / Biehl, M. / Kinzel, W. et al. | 1999
- 88
-
Activation energy for Ga diffusion on the GaAs(001)-(2x4) surface: an MBE-STM studyYang, H. / LaBella, V.P. / Bullock, D.W. / Ding, Z. / Smathers, J.B. / Thibado, P.M. et al. | 1999
- 93
-
Smoothing kinetics of CdTe(001)-surfaces:indication for a step/terrace exchange barrier - Atomistic and Collective ProcessesNeureiter, H. / Schinzer, S. / Sokolowski, M. / Umbach, E. et al. | 1999
- 97
-
Elastic interaction between defects on a surfacePeyla, P. / Vallat, A. / Misbah, C. et al. | 1999
- 101
-
Self-organized vicinal surfaces: a template for the growth of nanostructuresMartrou, D. / Gentile, P. / Magnea, N. et al. | 1999
- 106
-
In situ studies of III-V semiconductor film growth by molecular beam epitaxyJoyce, B.A. / Vvedensky, D.D. / Jones, T.S. / Itoh, M. / Bell, G.R. / Belk, J.G. et al. | 1999
- 113
-
In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III-V compoundsSilveira, J.P. / Briones, F. et al. | 1999
- 118
-
Atomic-level in situ real-space observation of Ga adatoms on GaAs(001)(2x4)-As surface during molecular beam epitaxy growthTsukamoto, S. / Koguchi, N. et al. | 1999
- 124
-
SEM imaging of fundamental growth processes during MBE of GaAs on (111)A substratesYamaguchi, H. / Homma, Y. et al. | 1999
- 128
-
In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopyTaferner, W.T. / Mahalingam, K. / Dorsey, D.L. / Eyink, K.G. et al. | 1999
- 132
-
In situ reflectance difference spectroscopy: nitrogen-plasma doping of MBE grown ZnTe layersStifter, D. / Bonanni, A. / Garcia-Rocha, M. / Schmid, M. / Hingerl, K. / Sitter, H. et al. | 1999
- 137
-
Surface characterization of III-V heteroepitaxial systems by laser light scatteringGonzalez, M.U. / Sanchez-Gil, J.A. / Gonzalez, Y. / Gonzalez, L. / Garca, R. / San Paulo, A. / Garca, J.M. et al. | 1999
- 141
-
Asymmetric behavior of monolayer holes after growth in GaAs molecular beam epitaxy revealed by in situ scanning electron microscopyTanahashi, K. / Kawamura, K. / Inoue, N. / Homma, Y. et al. | 1999
- 146
-
MBE growth and in situ electrical characterization of metal/semiconductor structuresChen, L.C. / Caldwell, D.A. / Muller, T.A. / Finstad, T.G. / Schildgen, W. / Palmstrom, C.J. et al. | 1999
- 150
-
Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxyHorikoshi, Y. et al. | 1999
- 159
-
Very high quality 2DEGS formed without dopant in GaAs/AlGaAs heterostructuresHarrell, R.H. / Thompson, J.H. / Ritchie, D.A. / Simmons, M.Y. / Jones, G.A.C. / Pepper, M. et al. | 1999
- 163
-
An optimized digital alloy growth technique for accurate band gap engineeringGeiszelbrecht, W. / Pfeiffer, U. / Thranhardt, A. / Klutz, U. / Gossard, A.C. / Dohler, G.H. et al. | 1999
- 166
-
Surface structure transitions on (001) GaAs during MBEPreobrazhenskii, V.V. / Putyato, M.A. / Pchelyakov, O.P. / Semyagin, B.R. et al. | 1999
- 170
-
Experimental determination of the incorporation factor of As"4 during molecular beam epitaxy of GaAsPreobrazhenskii, V.V. / Putyato, M.A. / Pchelyakov, O.P. / Semyagin, B.R. et al. | 1999
- 174
-
Arsenic-free high-temperature surface cleaning of molecular beam epitxy (MBE)-grown AlGaAs layer with new passivation structureIizuka, K. / Watanabe, H. / Suzuki, T. / Okamoto, H. et al. | 1999
- 178
-
Growth and structural characteristics of (Ga,Al)As Bragg reflectors grown by MBE on nominal and vicinal (111)B GaAs substratesGuerret-Piecourt, C. / Fontaine, C. / Ponchet, A. et al. | 1999
- 183
-
Arsenic induced mass transport of GaAs on V-groove GaAs substrateMartin, D. / Robadey, J. / Filipowitz, F. / Gourgon, C. / Reinhart, F.K. et al. | 1999
- 187
-
MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxyEbert, C.B. / Eyres, L.A. / Fejer, M.M. / Harris, J.S. et al. | 1999
- 194
-
Growth of Ge layers with high hole mobility on surface controlled AlAs by molecular beam epitaxyMaeda, T. / Tanaka, H. et al. | 1999
- 198
-
Re-entrant behaviour in GaAs(111)A homoepitaxySteans, P.H. / Neave, J.H. / Zhang, J. / Tok, E.S. / Bell, G.R. / Joyce, B.A. / Jones, T.S. et al. | 1999
- 202
-
Heterojunction and interface space charge effects on interstitial Be diffusion during molecular beam epitaxy (MBE) growthPao, Y.-C. et al. | 1999
- 206
-
Electronic lifetime engineering using low-temperature GaAs in a quantum well structureStellmacher, M. / Berger, V. / Sirtori, C. / Nagle, J. et al. | 1999
- 212
-
Behavior of arsenic precipitation in low-temperature grown III-V arsenidesChang, M.N. / Hsieh, K.C. / Nee, T.-E. / Chuo, C.C. / Chyi, J.-I. et al. | 1999
- 217
-
Properties of C-doped LT-GaAs grown by MBE using CBr"4Liu, W.K. / Bacher, K. / Towner, F.J. / Stewart, T.R. / Reed, C. / Specht, P. / Lutz, R.C. / Zhao, R. / Weber, E.R. et al. | 1999
- 221
-
Superior molecular beam epitaxy (MBE) growth on (N11)A GaAsShtrikman, H. / Hanein, Y. / Soibel, A. / Meirav, U. et al. | 1999
- 226
-
MBE growth of AlGaAs/GaAs heterostructure and silicon doping on GaAs(n11)A (n=1-4) substratesOhachi, T. / Feng, J.M. / Asai, K. / Uwani, M. / Tateuchi, M. / Vaccaro, P.O. / Fujita, K. et al. | 1999
- 232
-
Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001)Gutakovsky, A.K. / Katkov, A.V. / Katkov, M.I. / Pchelyakov, O.P. / Revenko, M.A. et al. | 1999
- 236
-
Van der Waals epitaxy for highly lattice-mismatched systemsKoma, A. et al. | 1999
- 242
-
Growth of InAsP/InP quantum wells by solid source MBE on misoriented and exact InP (111)B: substrate temperature and arsenic species effectsDagnall, G. / Stock, S.R. / Brown, A.S. et al. | 1999
- 248
-
Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substratesGeorgakilas, A. / Michelakis, K. / Kayambaki, M. / Tsagaraki, K. / Macarona, E. / Hatzopoulos, Z. / Vila, A. / Becourt, N. / Peiro, F. / Cornet, A. et al. | 1999
- 252
-
Elastic relaxation phenomena in compressive Ga"0"."2In"0"."8As grown on (001) and (113)B InP at low lattice mismatchLacombe, D. / Ponchet, A. / Frechengues, S. / Drouot, V. / Bertru, N. / Lambert, B. / Le Corre, A. et al. | 1999
- 256
-
First-principles calculations on atomic and electronic structures of misfit dislocations in InAs/GaAs(110) and GaAs/InAs(110) heteroepitaxiesOyama, N. / Ohta, E. / Takeda, K. / Shiraishi, K. / Yamaguchi, H. et al. | 1999
- 260
-
Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBEChaldyshev, V.V. / Faleev, N.N. / Bert, N.A. / Musikhin, Y.G. / Kunitsyn, A.E. / Preobrazhenskii, V.V. / Putyato, M.A. / Semyagin, B.R. / Werner, P. et al. | 1999
- 263
-
InAlAs buffer layers grown lattice mismatched on GaAs with inverse stepsCordier, Y. / Ferre, D. et al. | 1999
- 267
-
Interfacial deep-level defects as probes for ultrathin InAs insertions in GaAsKrispin, P. / Lazzari, J.-L. / Kostial, H. et al. | 1999
- 271
-
Annealing effects on lattice-strain-relaxed In"0"."5Al"0"."5As/In"0"."5Ga"0"."5As heterostructures grown on GaAs substratesMishima, T. / Kudo, M. / Kasai, J. / Higuchi, K. / Nakamura, T. et al. | 1999
- 276
-
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructuresPolimeni, A. / Patane, A. / Henini, M. / Eaves, L. / Main, P.C. / Sanguinetti, S. / Guzzi, M. et al. | 1999
- 280
-
A gas-source MBE growth study of strained Ga"1"-"xIn"xP layers on GaAsSchuler, O. / Wallart, X. / Mollot, F. et al. | 1999
- 284
-
Indium surface segregation in strained GaInAs quantum wells grown on (111) GaAs substrates by MBEMarcadet, X. / Fily, A. / Collin, S. / Landesman, J.P. / Larive, M. / Olivier, J. / Nagle, J. et al. | 1999
- 290
-
InGaN-based blue light-emitting diodes and laser diodesNakamura, S. et al. | 1999
- 296
-
Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical propertiesCalleja, E. / Sanchez-Garca, M.A. / Sanchez, F.J. / Calle, F. / Naranjo, F.B. / Munoz, E. / Molina, S.I. / Sanchez, A.M. / Pacheco, F.J. / Garca, R. et al. | 1999
- 318
-
Reactive MBE of group III nitrides: high-quality homoepitaxial GaN and ultra-violet light-emitting diodesMayer, M. / Pelzmann, A. / Chung, H.Y. / Kamp, M. / Ebeling, K.J. et al. | 1999
- 323
-
GaN/GaInN-based light emitting diodes grown by molecular beam epitaxy using NH"3Grandjean, N. / Massies, J. et al. | 1999
- 327
-
MBE grown AlGaN/GaN MODFETs with high breakdown voltageVescan, A. / Dietrich, R. / Wieszt, A. / Tobler, H. / Leier, H. / Van Hove, J.M. / Chow, P.P. / Wowchak, A.M. et al. | 1999
- 332
-
Layered compound substrates for GaN growthYamada, A. / Ho, K.P. / Akaogi, T. / Maruyama, T. / Akimoto, K. et al. | 1999
- 336
-
A new initial growth method for pure cubic GaN on GaAs(001)Chen, H. / Liu, H.-f. / Li, Z.-q. / Liu, S. / Huang, Q. / Zhou, J.-m. / Wang, Y.-q. et al. | 1999
- 341
-
Growth and characterization of cubic AlGaN and AlN epilayers by RF-plasma assisted MBEKoizumi, T. / Okumura, H. / Balakrishnan, K. / Harima, H. / Inoue, T. / Ishida, Y. / Nagatomo, T. / Nakashima, S. / Yoshida, S. et al. | 1999
- 346
-
Plasma-assisted MBE growth of GaN and InGaN on different substratesMamutin, V.V. / Sorokin, S.V. / Jmerik, V.N. / Shubina, T.V. / Ratnikov, V.V. / Ivanov, S.V. / Kop'ev, P.S. / Karlsteen, M. / Sodervall, U. / Willander, M. et al. | 1999
- 351
-
Nitrogen incorporation rate, optimal growth temperature, and AsH"3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-sourceKitatani, T. / Kondow, M. / Nakahara, K. / Larson, M.C. / Yazawa, Y. / Okai, M. / Uomi, K. et al. | 1999
- 355
-
Strain effect on the N composition dependence of GaNAs bandgap energy grown on (001) GaAs by metalorganic molecular beam epitaxyUesugi, K. / Morooka, N. / Suemune, I. et al. | 1999
- 359
-
Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxySchenk, H.P.D. / Kipshidze, G.D. / Lebedev, V.B. / Shokhovets, S. / Goldhahn, R. / Krau@blich, J. / Fissel, A. / Richter, W. et al. | 1999
- 365
-
Spatially resolved photoluminescence of laterally overgrown GaNGibart, P. / Beaumont, B. / Soo-Jin, C. et al. | 1999
- 371
-
Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBEAsahi, H. / Iwata, K. / Tampo, H. / Kuroiwa, R. / Hiroki, M. / Asami, K. / Nakamura, S. / Gonda, S. et al. | 1999
- 376
-
Defect related persistent effects in MBE grown gallium nitride epilayersReddy, C.V. / Balakrishnan, K. / Okumura, H. / Yoshida, S. et al. | 1999
- 382
-
Real-time control of the molecular beam epitaxy of nitridesMassies, J. / Grandjean, N. et al. | 1999
- 388
-
RHEED studies of the GaN surface during growth by molecular beam epitaxyHughes, O.H. / Cheng, T.S. / Novikov, S.V. / Foxon, C.T. / Korakakis, D. / Jeffs, N.J. et al. | 1999
- 392
-
Suppression of hexagonal GaN mixing by As"4 molecular beam in cubic GaN growth on GaAs (001) substratesHashimoto, A. / Motizuki, T. / Wada, H. / Masuda, A. / Yamamoto, A. et al. | 1999
- 396
-
Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxyLima, A.P. / Tabata, A. / Leite, J.R. / Kaiser, S. / Schikora, D. / Schottker, B. / Frey, T. / As, D.J. / Lischka, K. et al. | 1999
- 399
-
Characterisation of an RF atomic nitrogen plasma sourceVoulot, D. / McCullough, R.W. / Thompson, W.R. / Burns, D. / Geddes, J. / Cosimini, G.J. / Nelson, E. / Chow, P.P. / Klaassen, J. et al. | 1999
- 402
-
Enhancement of surface decomposition using supersonic beam: direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxyShen, X.Q. / Tanaka, S. / Iwai, S. / Aoyagi, Y. et al. | 1999
- 407
-
Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBETrampert, A. / Brandt, O. / Yang, B. / Jenichen, B. / Ploog, K.H. et al. | 1999
- 411
-
MBE of AlN on SiC and influence of structural substrate defects on epitaxial growthEbling, D.G. / Rattunde, M. / Steinke, L. / Benz, K.W. / Winnacker, A. et al. | 1999
- 415
-
MBE growth of GaN and AlGaN layers on Si(111) substrates: doping effectsSanchez-Garca, M.A. / Calleja, E. / Naranjo, F.B. / Sanchez, F.J. / Calle, F. / Munoz, E. / Sanchez, A.M. / Pacheco, F.J. / Molina, S.I. et al. | 1999
- 419
-
Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wellsXin, H.P. / Kavanagh, K.L. / Kondow, M. / Tu, C.W. et al. | 1999
- 423
-
Effect of the nucleation layer deposition temperature on the nature of defects in GSMBE GaN filmsVennegues, P. / Grandjean, N. / Massies, J. / Semond, F. et al. | 1999
- 429
-
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH"3 cracked on the growing surfaceZhang, J.-P. / Sun, D.-Z. / Li, X.-B. / Wang, X.-L. / Kong, M.-Y. / Zeng, Y.-P. / Li, J.-M. / Lin, L.-Y. et al. | 1999
- 433
-
Buffer layers for the growth of GaN on sapphire by molecular beam epitaxyEbel, R. / Fehrer, M. / Figge, S. / Einfeldt, S. / Selke, H. / Hommel, D. et al. | 1999
- 437
-
Growth evolution of cubic-GaN on sapphire (0001) substrate by metalorganic molecular beam epitaxySuda, J. / Kurobe, T. / Matsunami, H. et al. | 1999
- 441
-
AlN on sapphire and on SiC: CL and Raman studyKornitzer, K. / Limmer, W. / Thonke, K. / Sauer, R. / Ebling, D.G. / Steinke, L. / Benz, K.W. et al. | 1999
- 444
-
Epitaxial growth of GaN/Pd/GaN sandwich structureTanaka, U. / Maruyama, T. / Akimoto, K. et al. | 1999
- 448
-
Growth of ZnSe-(Zn,Mg)(S,Se) superlattices by molecular beam epitaxyKorn, M. / Albert, D. / Nurnberger, J. / Faschinger, W. et al. | 1999
- 453
-
Molecular beam epitaxy of CdS/ZnSe heterostructuresPetillon, S. / Dinger, A. / Grun, M. / Hetterich, M. / Kazukauskas, V. / Klingshirn, C. / Liang, J. / Weise, B. / Wagner, V. / Geurts, J. et al. | 1999
- 457
-
Chlorine doping of cubic CdS and ZnS grown by compound source molecular-beam epitaxyGrun, M. / Storzum, A. / Hetterich, M. / Kamilli, A. / Send, W. / Walter, T. / Klingshirn, C. et al. | 1999
- 461
-
Peculiarities of migration-enhanced-epitaxy (MEE) versus molecular beam epitaxy (MBE) growth kinetics of CdSe fractional monolayers in ZnSeSorokin, S. / Shubina, T. / Toropov, A. / Sedova, I. / Sitnikova, A. / Zolotareva, R. / Ivanov, S. / Kop'ev, P. et al. | 1999
- 465
-
CdTe epitaxial layers in ZnSe-based heterostructuresRubini, S. / Bonanni, B. / Pelucchi, E. / Franciosi, A. / Zhuang, Y. / Bauer, G. et al. | 1999
- 470
-
SIMS study of Al thermal diffusion in MBE-grown sandwiched-ZnSTe structuresMa, Z.H. / Smith, T. / Sou, I.K. et al. | 1999
- 474
-
Homoepitaxy of ZnSe on the citric acid etched (100)ZnSe surfaceKobayashi, M. / Wakao, K. / Nakamura, S. / Jia, A. / Yoshikawa, A. / Shimotomai, M. / Kato, Y. / Takahashi, K. et al. | 1999
- 477
-
Up-conversion effect of ZnSe-ZnTe superlattices with modulated periodicityWatanabe, K. / Chikarayumi, Y. / Tsubono, I. / Kimura, N. / Suzuki, K. / Sawada, T. / Imai, K. et al. | 1999
- 481
-
Cathodoluminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructuresSolov'ev, V.A. / Sorokin, S.V. / Sedova, I.V. / Mosina, G.N. / Ivanov, S.V. / Lugauer, H.-J. / Reuscher, G. / Keim, M. / Waag, A. / Landwehr, G. et al. | 1999
- 486
-
Formation of the charge balanced ZnSe/GaAs(110) interfaces by molecular beam epitaxyMaehashi, K. / Morota, N. / Murase, Y. / Yasui, N. / Shikimi, A. / Nakashima, H. et al. | 1999
- 490
-
Atomic layer epitaxy processes of ZnSe on GaAs(001) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)Ohtake, A. / Hanada, T. / Arai, K. / Komura, T. / Miwa, S. / Kimura, K. / Yasuda, T. / Jin, C. / Yao, T. et al. | 1999
- 494
-
Molecular-beam epitaxy of BeTe layers on GaAs substratesTournie, E. / Bousquet, V. / Faurie, J.-P. et al. | 1999
- 498
-
Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayerBousquet, V. / Laugt, M. / Vennegues, P. / Tournie, E. / Faurie, J.-P. et al. | 1999
- 502
-
Growth of ZnSe layers on @b(2x4)As, (ix3)Te, and (4x2)Ga-terminated (001)GaAs substratesCarbonell, L. / Etgens, V.H. / Koebel, A. / Eddrief, M. / Capelle, B. et al. | 1999
- 506
-
Structural and optical properties of high-quality ZnTe grown on GaAs using ZnSe/ZnTe strained-layer superlattices buffer layerTu, R.C. / Su, Y.K. / Huang, Y.S. / Chien, F.R. et al. | 1999
- 510
-
Strain relaxation of ZnCdSe quantum wells grown on (211)B GaAs measured using the piezoelectric effectMilnes, J.S. / Telfer, S.A. / Morhain, C. / Urbaszek, B. / Prior, K.A. / Cavenett, B.C. et al. | 1999
- 514
-
Molecular-beam epitaxy of Zn"xBe"1"-"xSe layers on vicinal Si(001) substratesChauvet, C. / Guenaud, C. / Vennegues, P. / Tournie, E. / Faurie, J.P. et al. | 1999
- 518
-
Two-dimensional growth mode promotion of ZnSe on Si(111) by using a nitrogen substrate surface treatmentMendez-Garca, V.H. / Lopez-Lopez, M. et al. | 1999
- 524
-
Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTeHe, L. / Wang, S.L. / Yang, J.R. / Yu, M.F. / Wu, Y. / Chen, X.Q. / Fang, W.Z. / Qiao, Y.M. / Gui, Y. / Chu, J. et al. | 1999
- 530
-
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffersPeng, C.S. / Chen, H. / Zhao, Z.Y. / Li, J.H. / Dai, D.Y. / Huang, Q. / Zhou, J.M. / Zhang, Y.H. / Tung, C.H. / Sheng, T.T. et al. | 1999
- 534
-
Optical Er-doping of Si during sublimational molecular beam epitaxyAndreev, B.A. / Andreev, A.Y. / Ellmer, H. / Hutter, H. / Krasil'nik, Z.F. / Kuznetsov, V.P. / Lanzerstorfer, S. / Palmetshofer, L. / Piplits, K. / Rubtsova, R.A. et al. | 1999
- 538
-
Surfactant-mediated growth of Ge/Si(001) studied by Raman spectroscopy and TEMBrill, G. / Smith, D.J. / Chandrasekhar, D. / Gogotsi, Y. / Prociuk, A. / Sivananthan, S. et al. | 1999
- 542
-
Surface morphology evolutions during the first stages of epitaxial growth of Si on Ge(001): a RHEED studyDentel, D. / Bischoff, J.L. / Kubler, L. / Faure, J. et al. | 1999
- 547
-
Influence of misfit and threading dislocations on the surface morphology of SiGe graded-layersGallas, B. / Hartmann, J.M. / Berbezier, I. / Abdallah, M. / Zhang, J. / Harris, J.J. / Joyce, B.A. et al. | 1999
- 551
-
Influence of crystal perfection on the reverse leakage current of the SiGe/Si p-n heterojunction diodesLiu, X.F. / Liu, J.P. / Li, J.P. / Wang, Y.T. / Li, L.Y. / Sun, D.Z. / Kong, M.Y. / Lin, L.Y. et al. | 1999
- 556
-
Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealingLiu, J.P. / Kong, M.Y. / Liu, X.F. / Li, J.P. / Huang, D.D. / Li, L.X. / Sun, D.Z. et al. | 1999
- 560
-
Ge concentration dependence of Sb surface segregation during SiGe MBENakagawa, K. / Sugii, N. / Yamaguchi, S. / Masanobu Miyao et al. | 1999
- 564
-
The effects of carbonized buffer layer on the growth of SiC on SiWang, Y.S. / Li, J.M. / Zhang, F.F. / Lin, L.Y. et al. | 1999
- 568
-
Atomic layer in situ etching and MBE regrowthEberl, K. / Lipinski, M. / Schuler, H. et al. | 1999
- 574
-
Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structuresHilburger, U. / Fix, W. / Mayer, R. / Geiszelbrecht, W. / Malzer, S. / Velling, P. / Prost, W. / Tegude, F.J. / Dohler, G.H. et al. | 1999
- 578
-
Patterned substrate overgrowth for optoelectronic device integration using chemical beam epitaxy (CBE)Poole, P.J. / Williams, R.L. / Lacelle, C. / Gupta, V. / Fraser, J.W. / Lamontagne, B. / Buchanan, M. et al. | 1999
- 582
-
Minimizing interface contamination in MBE overgrowthHey, R. / Wassermeier, M. / Horicke, M. / Wiebicke, E. / Kostial, H. et al. | 1999
- 586
-
Selective area regrowth of n-GaAs with reduced interface carrier depletion using arsenic passivationHeinlein, C. / K. Grepstad, J. / Fimland, B.-O. / Berge, T. et al. | 1999
- 590
-
Selective growth on facets and in situ mask removal for regrowthShiralagi, K. / Zhang, R. / Tsui, R. et al. | 1999
- 594
-
In situ cleaning of air-exposed InGaAs using trisdimethylaminoarsine for CBE regrowth aimed at optical devicesSugiura, H. / Mitsuhara, M. / Kondo, S. / Tsuzuki, K. et al. | 1999
- 599
-
In situ lateral structuring during II-VI MBE growth with Al"5"0Ga"5"0As-GaAs shadow masksSchumacher, C. / Faschinger, W. / Hock, V. / Resz, H.R. / Nurnberger, J. / Ehinger, M. et al. | 1999
- 604
-
Maskless selective area molecular beam epitaxy of semiconductors and metals using atomic step networks on siliconFinnie, P. / Homma, Y. et al. | 1999
- 610
-
Maskless selective epitaxy of In"xGa"1"-"xAs using low-energy In"0"."1"5Ga"0"."8"5-FIB and As"4 molecular beamCho, D.H. / Hachiro, M. / Abe, Y. / Pak, K. et al. | 1999
- 614
-
Kinetics of AsCl"3 chemical beam etching of GaAs(001), (111)A and (111)B surfacesGuyaux, J.L. / Ortion, J.-M. / Cordier, Y. / Kappers, M. / Chirlias, E. / Garcia, J.-C. et al. | 1999
- 619
-
Self-organized MBE growth of II-VI epilayers on patterned GaSb substratesWissmann, H. / Tran Anh, T. / Rogaschewski, S. / von Ortenberg, M. et al. | 1999
- 623
-
Potential barrier formed at n-ZnSe regrowth homointerface by molecular beam epitaxyYamagata, Y. / Sawada, T. / Imai, K. / Suzuki, K. et al. | 1999
- 627
-
Growth of high-quality epitaxial ZnO films on @a-Al"2O"3Fons, P. / Iwata, K. / Niki, S. / Yamada, A. / Matsubara, K. et al. | 1999
- 633
-
Formation of amorphous native oxides by very-low-temperature molecular beam epitaxy and water vapor oxidationChang, K.L. / Chou, L.J. / Hsieh, K.C. / Wohlert, D.E. / Pickrell, G.W. / Cheng, K.Y. et al. | 1999
- 638
-
Molecular-beam epitaxy of InAs on anodized GaAs substratesMorishita, Y. / Saitoh, T. / Kawai, S. et al. | 1999
- 643
-
Lattice mismatched molecular beam epitaxy on compliant GaAs/Al"xO"y/GaAs substrates produced by lateral wet oxidationLubyshev, D. / Mayer, T.S. / Cai, W.-Z. / Miller, D.L. et al. | 1999
- 648
-
Improvement of the surface morphology of the epitaxial @c-Al"2O"3 films on Si(111) grown using template growth with different temperatures by Al solid and N"2O gas source molecular beam epitaxy (MBE)Jung, Y.-C.Y.-C. / Miura, H. / Ishida, M. et al. | 1999
- 652
-
Electrical characterization of Al"2O"3 on Si from thermally oxidized AlAs and AlLiao, C.C. / Chin, A. / Tsai, C. et al. | 1999
- 656
-
Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation processMatsuzaki, Y. / Yuasa, K.-i. / Shirakashi, J.-i. / Chilla, E.K. / Yamada, A. / Konagai, M. et al. | 1999
- 660
-
Ferromagnet/semiconductor hybrid structures grown by molecular-beam epitaxyTanaka, M. et al. | 1999
- 670
-
Ferromagnetic transition in II-VI semimagnetic QWs - The Magnetic Heavy Rare-earthsCibert, J. / Kossacki, P. / Haury, A. / Ferrand, D. / Wasiela, A. / Merle d'Aubigne, Y. / Arnoult, A. / Tatarenko, S. / Dietl, T. et al. | 1999
- 674
-
Microstructure formation during MnAs growth on GaAs(001)Schippan, F. / Trampert, A. / Daweritz, L. / Ploog, K.H. / Dennis, B. / Neumann, K.U. / Ziebeck, K.R.A. et al. | 1999
- 679
-
Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)AsShen, A. / Matsukura, F. / Guo, S.P. / Sugawara, Y. / Ohno, H. / Tani, M. / Abe, H. / Liu, H.C. et al. | 1999
- 684
-
InAs and (In,Mn)As nanostructures grown on GaAs(100), (211)B, and (311)B substratesS.P. / A. / Matsukura, F. / Ohno, Y. / Ohno, H. et al. | 1999
- 689
-
Tunneling spectroscopy and tunneling magnetoresistance in (GaMn)As ultrathin heterostructures - Condensed MatterHayashi, T. / Shimada, H. / Shimizu, H. / Tanaka, M. et al. | 1999
- 693
-
Epitaxial growth of magnetic Mn"2Sb"1"-"xAs"x thin films on (001)GaAsMiyanishi, S. / Akinaga, H. / Van Roy, W. / Tanaka, K. et al. | 1999
- 698
-
Low-temperature MBE growth of GaAs on magnetic metal substratesVan Roy, W. / Akinaga, H. / Miyanishi, S. et al. | 1999
- 702
-
Fe/GaAs(001) and Fe/GaSb(001) heterostructures: epitaxial growth and magnetic propertiesLepine, B. / Lallaizon, C. / Ababou, S. / Guivarc'h, A. / Deputier, S. / Filipe, A. / Nguyen Van Dau, F. / Schuhl, A. / Abel, F. / Cohen, C. et al. | 1999
- 707
-
In situ characterization of the growth dynamics in molecular beam epitaxy (MBE) of Mn-based II-VI compounds: self-organized Mn structures on CdTeBonanni, A. / Stifter, D. / Hingerl, K. / Seyringer, H. / Sitter, H. et al. | 1999
- 711
-
Semimagnetic II-VI heterostructures for resonant tunnelingKeim, M. / Lunz, U. / Hu, C.Y. / Zehnder, U. / Ossau, W. / Waag, A. / Landwehr, G. et al. | 1999
- 715
-
n- And p-type modulation doping of Te related semimagnetic II-VI heterostructuresArnoult, A. / Ferrand, D. / Huard, V. / Cibert, J. / Grattepain, C. / Saminadayar, K. / Bourgognon, C. / Wasiela, A. / Tatarenko, S. et al. | 1999
- 719
-
Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMSHarde, P. / Gibis, R. / Kaiser, R. / Kizuki, H. / Kunzel, H. et al. | 1999
- 723
-
Influence of a facetted surface on the epitaxial growth and properties of a magnetic thin filmNguyen Van Dau, F. / Sussiau, M. / Galtier, P. / Encinas, A. / Schuhl, A. et al. | 1999
- 727
-
Pressure and Hall sensors: what does MBE allow to do?Robert, J.L. / Contreras, S. / Sicart, J. / Mosser, V. / Kobbi, F. et al. | 1999
- 734
-
Strain relieved SiGe buffers for Si-based heterostructure field-effect transistorsHackbarth, T. / Hoeck, G. / Herzog, H.-J. / Zeuner, M. et al. | 1999
- 739
-
MBE grown selective recess structures for microwave and millimeter-wave power PHEMTsPao, Y.-C. / Tran, K. / Franklin, J. / Bailey, M. et al. | 1999
- 744
-
GSMBE grown In"0"."4"9Ga"0"."5"1P/(In)GaAs/GaAs high hole mobility transistor structuresChen, J.X. / Li, A.Z. / Yang, Q.K. / Lin, C. / Ren, Y.C. / Jin, S.R. / Qi, M. / Xu, H.G. / Chen, X.J. et al. | 1999
- 749
-
Very high electron mobilities at low temperatures in In"xGa"1"-"xAs/In"yAl"1"-"yAs HEMTs grown lattice-mismatched on GaAs substratesGozu, S.-i. / Tsuboki, K. / Hayashi, M. / Hong, C. / Yamada, S. et al. | 1999
- 753
-
High-mobility electron systems in remotely-doped InSb quantum wellsGoldammer, K.J. / Chung, S.J. / Liu, W.K. / Santos, M.B. / Hicks, J.L. / Raymond, S. / Murphy, S.Q. et al. | 1999
- 757
-
Optimization of layer structure for InGaAs channel pseudomorphic HEMTsPearson, J.L. / Holland, M.C. / Stanley, C.R. / Long, A.R. / Skuras, E. / Asenov, A. / Davies, J.H. et al. | 1999
- 761
-
Ultrashort FETs formed by GaAs/AlGaAs MBE regrowth on a patterned @d doped GaAs layerBurke, T.M. / Leadbeater, M.L. / Linfield, E.H. / Patel, N.K. / Ritchie, D.A. / Pepper, M. et al. | 1999
- 765
-
Magneto-resistance effect in InSb thin film grown using molecular beam epitaxyOkamoto, A. / Yoshida, T. / Muramatsu, S. / Shibasaki, I. et al. | 1999
- 769
-
Ohmic versus rectifying contacts through interfacial dipoles: Al/In"xGa"1"-"xAsMarinelli, C. / Sorba, L. / Muller, B.H. / Kumar, D. / Orani, D. / Rubini, S. / Franciosi, A. / De Franceschi, S. / Lazzarino, M. / Beltram, F. et al. | 1999
- 773
-
GaAs/Al"0"."4Ga"0"."6As triple barrier resonant tunneling diodes with (411)A super-flat interfaces grown by MBEShinohara, K. / Shimizu, Y. / Shimomura, S. / Hiyamizu, S. et al. | 1999
- 778
-
Vertical transport properties through pseudo-metallic InAs thin films grown on GaAs (111)A substratesYamaguchi, H. / Hirayama, Y. et al. | 1999
- 782
-
Modulation doped structure with thick strained InAs channel beyond the critical thicknessNakayama, T. / Miyamoto, H. et al. | 1999
- 786
-
Intrinsic modulation doping in InP-based structures: properties relevant to device applicationsBuyanova, I.A. / Chen, W.M. / Bi, W.G. / Zeng, Y.P. / Tu, C.W. et al. | 1999
- 790
-
Coupled double parabolic quantum wells grown with the analogue techniqueBargstadt-Franke, S. / Heyn, C. / Hansen, W. / Heitmann, D. et al. | 1999
- 795
-
Lateral inhomogeneities in engineered Schottky barriersHeun, S. / Schmidt, T. / Slezak, J. / Daz, J. / Prince, K.C. / Muller, B.H. / Franciosi, A. et al. | 1999
- 800
-
Dependencies of low-temperature electronic properties of MBE-grown GaAs/AlGaAs single heterojunctions upon arsenic speciesYamada, S. / Okayasu, J. / Gozu, S. / Hong, C.U. / Hori, H. et al. | 1999
- 805
-
Magneto-optical studies of GaAs/AlGaAs T-shaped quantum wire structures fabricated by cleaved edge overgrowthSorba, L. / Schedelbeck, G. / Wegscheider, W. / Bichler, M. / Bohm, G. / Abstreiter, G. et al. | 1999
- 810
-
Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10nm scale wires and side quantum wells (QWs) and their stimulated emission characteristicsKoshiba, S. / Watanabe, S. / Nakamura, Y. / Yamauchi, M. / Yoshita, M. / Baba, M. / Akiyama, H. / Sakaki, H. et al. | 1999
- 814
-
Uniform quantum wire and quantum dot arrays by atomic hydrogen assisted MBE on patterned high-index substrates: role of atomic hydrogen in natural self-facetingNotzel, R. / Schonherr, H.-P. / Niu, Z. / Daweritz, L. / Ploog, K.H. et al. | 1999
- 819
-
Organised growth on vicinal surfaces: - segregation and disorder effectsLaruelle, F. / Cavanna, A. / Lelarge, F. / Wang, Z.Z. / Etienne, B. et al. | 1999
- 824
-
In"0"."1"5Ga"0"."8"5As/GaAs quantum wire structures grown on (553)B GaAs substrates by molecular beam epitaxyHiyamizu, S. / Ohno, Y. / Higashiwaki, M. / Shimomura, S. et al. | 1999
- 828
-
Fabrication of uniform InGaAs/GaAs quantum wires on V-grooved substrate by chemical beam epitaxyKim, S.-B. / Ro, J.-R. / Park, K.-W. / Lee, E.-H. et al. | 1999
- 833
-
Quasi-quantum-wire field-effect transistor fabricated by composition-controlled, selective growth in molecular beam epitaxySugaya, T. / Takahashi, T. / Nakagawa, T. / Ogura, M. / Sugiyama, Y. et al. | 1999
- 837
-
Room temperature continuous wave operation under optical pumping of a 1.48@mm vertical cavity laser based on AlGaAsSb mirrorHarmand, J.C. / Ungaro, G. / Sagnes, I. / Debray, J.P. / Sermage, B. / Rivera, T. / Meriadec, C. / Oudar, J.L. / Raj, R. / Olivier-martin, F. et al. | 1999
- 841
-
1.5@mm Ga(Al)Sb laser grown on GaAs substrate by MBEKoeth, J. / Bleuel, T. / Werner, R. / Forchel, A. et al. | 1999
- 844
-
Growth and operation tolerances for Sb-based mid-infrared lasersGrein, C.H. / Flatte, M.E. / Ehrenreich, H. et al. | 1999
- 849
-
Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5@mm laser structures on GaSb substratesSimanowski, S. / Walther, M. / Schmitz, J. / Kiefer, R. / Herres, N. / Fuchs, F. / Maier, M. / Mermelstein, C. / Wagner, J. / Weimann, G. et al. | 1999
- 854
-
Al"xIn"1"-"xAs"1"-"ySb"y/GaSb effective mass superlattices grown by molecular beam epitaxyWashington-Stokes, D. / Hogan, T.P. / Chow, P.C. / Golding, T.D. / Kirschbaum, U. / Littler, C.L. / Lukic, R. et al. | 1999
- 858
-
Composition control of GaSbAs alloysBosacchi, A. / Franchi, S. / Allegri, P. / Avanzini, V. / Baraldi, A. / Magnanini, R. / Berti, M. / De Salvador, D. / Sinha, S.K. et al. | 1999
- 861
-
X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxySato, A. / Ohtani, K. / Terauchi, R. / Ohno, Y. / Matsukura, F. / Ohno, H. et al. | 1999
- 864
-
Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signatureKaspi, R. et al. | 1999
- 868
-
Study of interfaces in GaInSb/InAs quantum wells by high-resolution X-ray diffraction and reciprocal space mappingTomich, D.H. / Mitchel, W.C. / Chow, P. / Tu, C.W. et al. | 1999
- 872
-
Optical properties of GaAs"0"."5Sb"0"."5 and In"0"."5"3Ga"0"."4"7As/GaAs"0"."5Sb"0"."5 type II single hetero-structures lattice-matched to InP substrates grown by molecular beam epitaxyYamamoto, A. / Kawamura, Y. / Naito, H. / Inoue, N. et al. | 1999
- 877
-
Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodesToivonen, M. / Savolainen, P. / Orsila, S. / Vilokkinen, V. / Pessa, M. / Corvini, P. / Fang, F. / Nabiev, R.F. / Jansen, M. et al. | 1999
- 882
-
63% wallplug efficiency MBE grown InGaAs/AlGaAs broad-area laser diodes and arrays with carbon p-type doping using CBr"4Jager, R. / Heerlein, J. / Deichsel, E. / Unger, P. et al. | 1999
- 886
-
GaAs/(GaAs)"4(AlAs)"2 quantum wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxyHigashiwaki, M. / Ikawa, S. / Shimomura, S. / Hiyamizu, S. et al. | 1999
- 891
-
Epitaxially stacked GaAs/GaAlAs lasers using a low-resistance tunnel junctionGarcia, J.C. / Rosencher, E. / Collot, P. / Laurent, N. / Guyaux, J.L. / Nagle, J. / Chirlias, E. et al. | 1999
- 896
-
1.3@mm InAsP p-type modulation doped MQW lasers grown by gas-source molecular-beam epitaxyShimizu, H. / Kumada, K. / Yamanaka, N. / Iwai, N. / Mukaihara, T. / Kasukawa, A. et al. | 1999
- 901
-
GSMBE grown infrared quantum cascade laser structuresLi, A.Z. / Chen, J.X. / Yang, Q.K. / Ren, Y.C. et al. | 1999
- 905
-
High characteristic temperature Be-doped In"0"."5Ga"0"."5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxyNee, T.-E. / Yeh, N.-T. / Lee, J.-M. / Chyi, J.-I. / Lee, C.-T. et al. | 1999
- 909
-
Gas source MBE growth of 1.3@mm-InAsP/InGaAsP quantum wells GRINSCH laser showing low threshold current density and high output powerYiu Chung, H. / Stareev, G. / Joos, J. / Golling, M. / Mahnsz, J. / Ebeling, K. et al. | 1999
- 914
-
Improved carrier confinement in GaInAs/AlGaAs lasers by MBE grown short period superlattice quantum well barriersSchafer, F. / Mayer, B. / Reithmaier, J.P. / Forchel, A. et al. | 1999
- 919
-
GaAs/AlGaAs quantum cascade intersubband and interminiband emitterStrasser, G. / Hvozdara, L. / Gianordoli, S. / Unterrainer, K. / Gornik, E. / Kruck, P. / Helm, M. et al. | 1999
- 923
-
High performance phosphorus-free 1.3 @mm AlGaInAs/InP MQW lasersPan, J.-W. / Chen, M.-H. / Chyi, J.-I. et al. | 1999
- 927
-
MBE-grown laser diodes based on beryllium containing II-VI semiconductors - Condens. MatterLugauer, H.-J. / Keim, M. / Reuscher, G. / Grabs, P. / Lunz, U. / Waag, A. / Landwehr, G. / Ivanov, S. / Shubina, T. / Toropov, A. et al. | 1999
- 933
-
Homoepitaxial laser diodes grown on conducting and insulating ZnSe substratesWenisch, H. / Fehrer, M. / Klude, M. / Isemann, A. / Groszmann, V. / Heinke, H. / Ohkawa, K. / Hommel, D. / Prokesch, M. / Rinas, U. et al. | 1999
- 938
-
p-Type doping of ZnSe and related materials controlled by diluting nitrogen in an inert gasTournie, E. / Brunet, P. / Faurie, J.-P. et al. | 1999
- 942
-
Ultra-low threshold ZnSe-based lasers with novel design of active regionIvanov, S.V. / Toropov, A.A. / Sorokin, S.V. / Shubina, T.V. / Lebedev, A.V. / Sedova, I.V. / Sitnikova, A.A. / Zolotareva, R.V. / Kop'ev, P.S. / Alferov, Z.I. et al. | 1999
- 946
-
Optical characterization of MBE grown ZnSe-based QW laser heterostructuresShubina, T.V. / Toropov, A.A. / Lebedev, A.V. / Ivanov, S.V. / Kop'ev, P.S. / Lugauer, H.-J. / Reuscher, G. / Keim, M. / Worschech, L. / Waag, A. et al. | 1999
- 950
-
The influence of magnesium on p-type doping and optoelectronic properties of Zn"1"-"xMg"xSe-based heterostructuresVogele, B. / Morhain, C. / Urbaszek, B. / Telfer, S.A. / Prior, K.A. / Cavenett, B.C. et al. | 1999
- 954
-
MBE growth of novel MgSe/ZnSeTe:N II-VI compound superlattice quasi-quaternaries on InP substrates and application to light-emitting diodesNomura, I. / Shinozaki, W. / Hattori, H. / Sano, T. / Che, S.-B. / Shimbo, H. / Kikuchi, A. / Shimomura, K. / Kishino, K. et al. | 1999
- 957
-
Molecular beam epitaxy growth of Be-chalcogenides and fabrication of ZnSe/ZnMgBeSe laser structuresCho, M.W. / Chang, J.H. / Koh, K.W. / Yao, T. et al. | 1999
- 961
-
Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers grown by molecular beam epitaxyTu, R.C. / Su, Y.K. / Lan, W.H. / Chien, F.R. et al. | 1999
- 965
-
High response photodiodes based on Be-chalcogenidesSiess, J. / Reuscher, G. / Grabs, P. / Lugauer, H.-J. / Schallenberg, T. / Ehinger, M. / Waag, A. / Landwehr, G. et al. | 1999
- 968
-
Visible-blind ultra-violet detectors with nano-second response timeMa, Z.H. / Sou, I.K. / Wong, K.S. / Yang, Z. / Wong, G.K.L. et al. | 1999
- 971
-
Observation of the photovoltaic effect in n-ZnSe/p-GaAs heterostructuresde Melo, O. / Santana, G. / Melendez-Lira, M. / Hernandez-Calderon, I. et al. | 1999
- 975
-
Characteristics of HgCdTe/CdTe hetero-epitaxial system and mid-wave diodes on 2 inch siliconDhar, N.K. / Zanatta, J.P. / Ferret, P. / Million, A. et al. | 1999
- 980
-
MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55@mm photodetectionde Lyon, T.J. / Baumgratz, B. / Chapman, G. / Gordon, E. / Hunter, A.T. / Jack, M. / Jensen, J.E. / Johnson, W. / Johs, B. / Kosai, K. et al. | 1999
- 985
-
Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodesOrsila, S. / Kongas, J. / Toivonen, M. / Savolainen, P. / Jalonen, M. / Pessa, M. et al. | 1999
- 990
-
Growth of resonant-cavity enhanced photodetectors by MBE with in situ feedback control using spectroscopic ellipsometryBeaudoin, M. / Kelkar, P. / Boonzaayer, M.D. / Braun, W. / Dowd, P. / Johnson, S.R. / Koelle, U. / Ryu, C.-M. / Zhang, Y.-H. et al. | 1999
- 994
-
High-efficiency top-emitting microcavity LEDs on GaAs and GaAs/Si substratesCarlin, J.F. / Royo, P. / Ilegems, M. / Gerard, B. / Marcadet, X. / Nagle, J. et al. | 1999
- 999
-
MBE growth of highly efficient lead-salt-based Bragg mirrors on BaF"2 (111) for the 4-6@mm wavelength regionSpringholz, G. / Schwarzl, T. / Heisz, W. / Seyringer, H. / Lanzerstorfer, S. / Krenn, H. et al. | 1999
- 1005
-
MBE growth of vertical-cavity surface-emitting laser structure without real-time monitoringWu, C.Z. / Tsou, Y. / Tsai, C.M. et al. | 1999
- 1010
-
Reduction of surface roughness of an AlAs/GaAs distributed Bragg reflector grown on Si with strained short-period superlatticesTsuji, T. / Yonezu, H. / Ohshima, N. et al. | 1999
- 1015
-
Optimization of the metamorphic growth of GaAs for long wavelength VCSELsBoucart, J. / Gaborit, F. / Fortin, C. / Goldstein, L. / Jacquet, J. / Leifer, K. et al. | 1999
- 1020
-
Growth of novel broadband high reflection mirrors by molecular beam epitaxySchon, S. / Zogg, H. / Keller, U. et al. | 1999
- 1024
-
Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55@mm emissionGenty, F. / Almuneau, G. / Chusseau, L. / Arnaud Wilk / Gaillard, S. / Boissier, G. / Grech, P. / Jacquet, J. et al. | 1999
- 1028
-
Precise growth of high uniformity vertical cavity devices using tunable dynamic optical reflectometryVan Dijk, F. / Bardinal, V. / Fontaine, C. / Bedel-Pereira, E. / Munoz-Yague, A. et al. | 1999
- 1032
-
Molecular beam epitaxy growth of MgZnSSe/ZnSSe/CdZnSe microcavity light-emitting diodes using in situ reflectance monitoringUusimaa, P. / Sipila, P. / Saarinen, M. / Toikkanen, L. / Rinta-Moykky, A. / Pessa, M. et al. | 1999
- 1036
-
II-VI infrared microcavity emitters with 2 postgrowth dielectric mirrorsRoux, C. / Filloux, P. / Mula, G. / Pautrat, J.-L. et al. | 1999
- 1040
-
Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectorsPeiris, F.C. / Lee, S. / Bindley, U. / Furdyna, J.K. / Stuckey, A.M. / Martin, M.R. / Buschert, J.R. et al. | 1999
- 1044
-
Molecular beam deposition of thin films of organic semiconductorsSassella, A. / Borghesi, A. / Pinotti, E. / Tubino, R. / Destri, S. / Porzio, W. et al. | 1999
- 1049
-
Optimization of MBE p-PbSe/Si (111) growthGautier, C. / Cambon, M. / Breton, G. / Nouaoura, M. / Averous, M. et al. | 1999
- 1053
-
CdF"2-CaF"2 superlattices on Si(111): MBE growth, structural and luminescence studiesSokolov, N.S. / Gastev, S.V. / Khilko, A.Y. / Kyutt, R.N. / Suturin, S.M. / Zamoryanskaya, M.V. et al. | 1999
- 1057
-
Heteroepitaxy of CuIn"xSe"y: - Material for high efficiency and stable thin film solar cellsTiwari, A.N. / Krejci, M. / Haug, F.-J. / Zogg, H. / Dobeli, M. / Zelezny, V. / Vorlicek, V. et al. | 1999
- 1061
-
Control of intrinsic defects in molecular beam epitaxy grown CuInSe"2Niki, S. / Fons, P.J. / Lacroix, Y. / Iwata, K. / Yamada, A. / Oyanagi, H. / Uchino, M. / Suzuki, Y. / Suzuki, R. / Ishibashi, S. et al. | 1999
- 1065
-
Delta p^+-doped InGaAs grown by gas source MBE for novel optoelectronic memory - J. Crystal GrowthSakata, H. / Nagao, Y. / Matsushima, Y. et al. | 1999
- 1069
-
Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applicationsAsahi, H. / Koh, H. / Takenaka, K. / Asami, K. / Oe, K. / Gonda, S. et al. | 1999
- 1073
-
Third-harmonic generation and growth mechanism of vanadyl-phthalocyanine single crystals prepared on KBr substrate by molecular beam epitaxyMaeda, A. / Okumura, N. / Furuhashi, H. / Yoshikawa, T. / Uchida, Y. / Kojima, K. / Ohashi, A. / Ochiai, S. / Ieda, M. / Mizutani, T. et al. | 1999
- 1077
-
Near-infrared intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxyMozume, T. / Yoshida, H. / Neogi, A. / Kudo, M. et al. | 1999
- 1081
-
Modeling of optical constants of InGaAs and InAlAs measured by spectroscopic ellipsometryGrassi, E. / Johnson, S.R. / Beaudoin, M. / Tsakalis, K.S. et al. | 1999
- 1085
-
Optical properties of In"xGa"1"-"xAs/GaAs MQW structures on (111)B GaAs grown by MBE: dependence on substrate miscutHopkinson, M. / Sanchez, J.J. / Gutierrez, M. / Gonzalez, D. / Aragon, G. / Izpura, I. / Garca, R. et al. | 1999
- 1089
-
Photoluminescence and Raman characterization of heavily doped Al"0"."3Ga"0"."7As grown by solid-source molecular beam epitaxy using carbon tetrabromideLubyshev, D. / Micovic, M. / Gratteau, N. / Cai, W.-Z. / Miller, D.L. / Ray, O. / Pusep, Y.A. / Silva, M.T.O. / Galzerani, J.C. / Bacher, K. et al. | 1999
- 1093
-
Optical responses of exciton-polaritons confined in thin GaAs/AlGaAs coupled multi-quantum-well layersIsu, T. / Akiyama, K. / Tomita, N. / Nomura, Y. et al. | 1999
- 1097
-
The effect of oxygen incorporation on interfacial recombination in GaInP/AlGaInP double heterostructures grown by molecular beam epitaxy using a solid phosphorus valved cellNagao, S. / Diffily, R. / Gotoh, H. / Ito, H. / Kuroda, T. / Minami, F. et al. | 1999
- 1101
-
Highly strained In"xGa"1"-"xAs/InP quantum wells grown by solid source MBE for applications in the 2-2.3@mm spectral rangeJourba, S. / Gendry, M. / Regreny, P. / Hollinger, G. et al. | 1999
- 1105
-
Molecular beam epitaxy and characterization of CdF"2 layers on CaF"2(111)Kaveev, A.K. / Kyutt, R.N. / Moisseeva, M.M. / Schowalter, L.J. / Shusterman, Y.V. / Sokolov, N.S. / Suturin, S.M. / Yakovlev, N.L. et al. | 1999
- 1109
-
Novel prospects for self-assembled InAs/GaAs quantum boxesGerard, J.M. / Lematre, A. / Legrand, B. / Ponchet, A. / Gayral, B. / Thierry-Mieg, V. et al. | 1999
- 1117
-
Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasersKovsh, A.R. / Zhukov, A.E. / Egorov, A.Y. / Ustinov, V.M. / Shernyakov, Y.M. / Maximov, M.V. / Volovik, V.V. / Tsatsul'nikov, A.F. / Musikhin, Y.V. / Ledentsov, N.N. et al. | 1999
- 1121
-
Self-assembled InP quantum dots for red LEDs on Si and injection lasers on GaAsZundel, M.K. / Eberl, K. / Jin-Phillipp, N.Y. / Phillipp, F. / Riedl, T. / Fehrenbacher, E. / Hangleiter, A. et al. | 1999
- 1126
-
Molecular beam epitaxy of highly faceted self-assembled IV-VI quantum dots with bimodal size distributionPinczolits, M. / Springholz, G. / Bauer, G. et al. | 1999
- 1131
-
Size and shape engineering of vertically stacked self-assembled quantum dotsWasilewski, Z.R. / Fafard, S. / McCaffrey, J.P. et al. | 1999
- 1136
-
Vertically stacked quantum dots grown by ALMBE and MBEFrigeri, P. / Bosacchi, A. / Franchi, S. / Allegri, P. / Avanzini, V. et al. | 1999
- 1139
-
In"0"."5Ga"0"."5As quantum dot lasers grown on (100) and (311)B GaAs substratesPatane, A. / Polimeni, A. / Henini, M. / Eaves, L. / Main, P.C. / Hill, G. et al. | 1999
- 1143
-
1.75@mm emission from self-organized InAs quantum dots on GaAsUstinov, V.M. / Egorov, A.Y. / Zhukov, A.E. / Kovsh, A.R. / Ledentsov, N.N. / Maximov, M.V. / Volovik, B.V. / Tsatsul'nikov, A.F. / Kop'ev, P.S. / Alferov, Z.I. et al. | 1999
- 1146
-
Control of size and density of self-assembled InAs dots on (001)GaAs and the dot size dependent capping processKamiya, I. / Tanaka, I. / Sakaki, H. et al. | 1999
- 1150
-
Volume distributions of InAs/GaAs self-assembled quantum dots by Stranski-Krastanow modeEbiko, Y. / Muto, S. / Suzuki, D. / Itoh, S. / Shiramine, K. / Haga, T. / Nakata, Y. / Sugiyama, Y. / Yokoyama, N. et al. | 1999
- 1154
-
Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(001) surfaces misoriented to the [010] directionEvtikhiev, V.P. / Tokranov, V.E. / Kryganovskii, A.K. / Boiko, A.M. / Suris, R.A. / Titkov, A.N. et al. | 1999
- 1158
-
Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dotsKudryashov, I.V. / Evtikhiev, V.P. / Tokranov, V.E. / Kotel'nikov, E.Y. / Kryganovskii, A.K. / Titkov, A.N. et al. | 1999
- 1161
-
Self-organization of the InGaAs/GaAs quantum dots superlatticeZhuang, Q. / Li, H. / Pan, L. / Li, J. / Kong, M. / Lin, L. et al. | 1999
- 1164
-
Self-assembled InAs dots and quantum wires fabricated on patterned (311)A GaAs substrates by molecular beam epitaxyYoh, K. / Nakasaki, R. / Takabayashi, S. et al. | 1999
- 1168
-
Characterization of In"0"."5Ga"0"."5As quantum dot p-i-n structures with different matricesYeh, N.-T. / Nee, T.-E. / Chyi, J.-I. et al. | 1999
- 1172
-
Influence of Te on the morphology of InAs self-assembled nanocrystalsSafar, G.A.M. / Rodrigues, W.N. / Moreira, M.V.B. / de Oliveira, A.G. / Neves, B.R.A. / Vilela, J.M. / Andrade, M.S. / Rochet, F. et al. | 1999
- 1176
-
Alloying effects in self-assembled InAs/InP dotsBrault, J. / Gendry, M. / Grenet, G. / Hollinger, G. / Desieres, Y. / Benyattou, T. et al. | 1999
- 1180
-
Self-organized InAs islands on InP(311)B substrates emitting around 1.55@mmFrechengues, S. / Drouot, V. / Bertru, N. / Lambert, B. / Loualiche, S. / Le Corre, A. et al. | 1999
- 1186
-
In(Ga)As/GaAs self-organized quantum dot light emitters grown on silicon substratesLinder, K.K. / Phillips, J. / Qasaimeh, O. / Bhattacharya, P. / Jiang, J.C. et al. | 1999
- 1190
-
Nearest-neighbor spatial ordering of strain-induced islands using a subsurface island superlatticeSolomon, G.S. / Komarov, S. / Harris, J.S. et al. | 1999
- 1194
-
Local surface band modulation with MBE-grown InAs quantum dots measured by atomic force microscopy with conductive tipTanaka, I. / Kamiya, I. / Sakaki, H. et al. | 1999
- 1198
-
Ga-droplet-induced formation of GaAs nano-islands by chemical beam epitaxyRo, J.-R. / Kim, S.-B. / Park, K. / Lee, E.-H. / Jihwa Lee et al. | 1999
- 1202
-
Self-organized InAs quantum dots in a silicon matrixEgorov, A.Y. / Kovsh, A.R. / Ustinov, V.M. / Zhukov, A.E. / Maksimov, M.V. / Cirlin, G.E. / Ledentsov, N.N. / Bimberg, D. / Werner, P. / Alferov, Z.I. et al. | 1999
- 1205
-
Growth of stacked GaSb/GaAs self-assembled quantum dots by molecular beam epitaxySuzuki, K. / Arakawa, Y. et al. | 1999
- 1209
-
Controlled growth of quantum dots on mesa topShiralagi, K. / Zhang, R. / Tsui, R. et al. | 1999
- 1212
-
On the formation of self-assembled Ge/Si(001) quantum dotsLe Thanh, V. / Boucaud, P. / Zheng, Y. / Younsi, A. / Debarre, D. / Bouchier, D. / Lourtioz, J.-M. et al. | 1999
- 1218
-
MBE growth and characterization of ZnSe self-organized dotsMa, Z.H. / Sou, I.K. / Wong, K.S. / Yang, Z. / Wong, G.K.L. et al. | 1999
- 1222
-
Growth of self-assembled (Zn)CdSe nanostructures on ZnSe by migration enhanced epitaxyLeonardi, K. / Hommel, D. / Meyne, C. / Zettler, J.-T. / W.Richter et al. | 1999
- 1226
-
Nanoscale cluster formation on CdTe epilayersMarsal, L. / Samson, Y. / Rouviere, J.L. / Mariette, H. et al. | 1999
- 1231
-
Optical properties of nanostructures self-organized in CdSe/ZnSe fractional monolayer superlatticesToropov, A.A. / Shubina, T.V. / Sorokin, S.V. / Sedova, I.V. / Sitnikova, A.A. / Ivanov, S.V. / Karlsteen, M. / Willander, M. / Bergman, J.P. / Pozina, G.R. et al. | 1999
- 1235
-
Index| 1999
-
Editorial(s)| 1999