Growth of high-quality InN using low-temperature intermediate layers by RF-MBE (Englisch)
- Neue Suche nach: Saito, Y.
- Neue Suche nach: Yamaguchi, T.
- Neue Suche nach: Kanazawa, H.
- Neue Suche nach: Kano, K.
- Neue Suche nach: Araki, T.
- Neue Suche nach: Nanishi, Y.
- Neue Suche nach: Teraguchi, N.
- Neue Suche nach: Suzuki, A.
- Neue Suche nach: Saito, Y.
- Neue Suche nach: Yamaguchi, T.
- Neue Suche nach: Kanazawa, H.
- Neue Suche nach: Kano, K.
- Neue Suche nach: Araki, T.
- Neue Suche nach: Nanishi, Y.
- Neue Suche nach: Teraguchi, N.
- Neue Suche nach: Suzuki, A.
In:
JOURNAL OF CRYSTAL GROWTH
;
237-239
;
1017-1021
;
2002
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Growth of high-quality InN using low-temperature intermediate layers by RF-MBE
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Beteiligte:Saito, Y. ( Autor:in ) / Yamaguchi, T. ( Autor:in ) / Kanazawa, H. ( Autor:in ) / Kano, K. ( Autor:in ) / Araki, T. ( Autor:in ) / Nanishi, Y. ( Autor:in ) / Teraguchi, N. ( Autor:in ) / Suzuki, A. ( Autor:in )
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Erschienen in:JOURNAL OF CRYSTAL GROWTH ; 237-239 ; 1017-1021
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Verlag:
- Neue Suche nach: ELSEVIER SCIENCE
-
Erscheinungsdatum:01.01.2002
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Format / Umfang:5 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 548
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 548 -
Datenquelle:
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Inhaltsverzeichnis – Band 237-239
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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- 8
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- 14
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- 21
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- 28
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- 35
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- 39
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- 55
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- 60
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Surface structure changes associated with Ga diffusion on Si(111)7x7 surfaceOnodera, T. / Ichikawa, T. / Mizoguchi, A. et al. | 2002
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- 641
-
Influence of Ca4GdO(BO3)3 doping on its propertiesukasiewicz, T. / Kityk, I. V. / Makowska-Janusik, M. / Majchrowski, A. / Ga&lz.xl / azka, Z. / Kaddouri, H. / Mierczyk, Z. et al. | 2002
- 645
-
Effect of crystallinity on the bulk laser damage and UV absorption of CLBO crystalsOno, R. / Kamimura, T. / Fukumoto, S. / Yap, Y. K. / Yoshimura, M. / Mori, Y. / Sasaki, T. / Yoshida, K. et al. | 2002
- 649
-
Growth and optical properties of a new nonlinear optical lanthanum calcium borate crystalXu, X. W. / Chong, T. C. / Zhang, G. Y. / Cheng, S. D. / Li, M. H. / Phua, C. C. et al. | 2002
- 654
-
The crystal growth and nonlinear optical properties of K2Al2B2O7Hu, Z. G. / Ushiyama, N. / Yap, Y. K. / Yoshimura, M. / Mori, Y. / Sasaki, T. et al. | 2002
- 658
-
The major problems of seeding and growth of barium borate crystals in terms of new data on phase relations in BaO-B2O3-Na2O systemTsvetkov, E. G. / Tyurikov, V. I. / Khranenko, G. G. et al. | 2002
- 663
-
Theoretical studies of nonlinear optical crystals in metal cluster compoundsWu, K. / Chen, X. / Snijders, J. G. / Sa, R. / Lin, C. / Zhuang, B. et al. | 2002
- 668
-
Morphologic characterization of DyxY1-xAl3(BO3)4 single crystals grown from the flux and vapour phaseMartazquez, R. / Caballero, M. A. / Gonzalez-Manas, M. / Kokanyan, E. P. / Ruiz, C. M. / Dieguez, E. et al. | 2002
- 672
-
Flux growth of large potassium titanyl phosphate crystals and their electro-optical applicationsWang, X. / Yuan, X. / Li, W. / Qi, J. / Wang, S. / Shen, D. et al. | 2002
- 677
-
Engineering of lithium niobate domain structure through the off-centered Czochralski growth techniqueBermudez, V. / Callejo, D. / Vilaplana, R. / Capmany, J. / Dieguez, E. et al. | 2002
- 682
-
Chemical and thermal conditions for the formation of stoichiometric LiNbO3Polgar, K. / Peter, A. / Poppl, L. / Ferriol, M. / Foldvari, I. et al. | 2002
- 687
-
Modeling of defects and surfaces in perovskite ferroelectricsBorstel, G. / Eglitis, R. I. / Kotomin, E. A. / Heifets, E. et al. | 2002
- 694
-
Growth and characterization of potassium tantalate niobate single crystals by the step-cooling techniqueIlangovan, R. / Ravi, G. / Subramanian, C. / Ramasamy, P. / Sakai, S. et al. | 2002
- 700
-
Growth and ferroelectric properties of Nd-doped strontium-barium niobate crystalsIvleva, L. I. / Volk, T. R. / Isakov, D. V. / Gladkii, V. V. / Polozkov, N. M. / Lykov, P. A. et al. | 2002
- 703
-
Crystal growth and physical properties of Cs2Nb4O11 and Rb2Nb4O11 single crystalsKharitonova, E. P. / Voronkova, V. I. / Yanovskii, V. K. / Stefanovich, S. Y. et al. | 2002
- 707
-
Growth habits of 3 and 4-inch langasite single crystalsUda, S. / Wang, S. Q. / Konishi, N. / Inaba, H. / Harada, J. et al. | 2002
- 714
-
High-quality langasite films grown by liquid phase epitaxyKlemenz, C. et al. | 2002
- 720
-
Growth of epitaxial substrate Gd3Ga5O12 (GGG) single crystal through pure GGG phase polycrystalline materialZhao, G. / Li, T. / Xu, J. et al. | 2002
- 725
-
MoO3-Li2O flux LPE growth of YIG films and its characterizationTakagi, T. / Fujino, M. / Fujii, T. et al. | 2002
- 730
-
The growth of TiO2 (rutile) single crystals using the FZ method under high oxygen pressurePark, J. K. / Shim, K. B. / Auh, K. H. / Tanaka, I. et al. | 2002
- 735
-
In situ measurement of Bi4Ge3O12 interface supercooling during melt crystal growthGolyshev, V. D. / Gonik, M. A. / Tsvetovsky, V. B. et al. | 2002
- 740
-
Bi4B2O9-crystal growth and some new attractive propertiesMuehlberg, M. / Burianek, M. / Edongue, H. / Poetsch, C. et al. | 2002
- 745
-
Optical properties of EFG grown Nd:YVO4 single crystals dependent on Nd concentrationHur, M. G. / Yang, W. S. / Suh, S. J. / Ivanov, M. A. / Kochurikhin, V. V. / Yoon, D. H. et al. | 2002
- 749
-
Growth of large Bi2Sr2CaCu2Oy single crystals by a modified vertical Bridgman methodTanaka, H. / Kishida, S. et al. | 2002
- 753
-
Growth of La-doped Bi2Sr2CaCu2Oz single crystals by a self-flux methodUemoto, H. / Maki, K. / Kishida, S. et al. | 2002
- 756
-
On the growth of underdoped Bi2Sr2CaCu2O8+d single crystals by TSFZ methodLiang, B. / Lin, C. T. et al. | 2002
- 762
-
Crystal growth of BiSrCaCuo thin films on submicron-sized step structuresIshibashi, T. / Yonemitsu, K. / Inagaki, K. / Sato, K. et al. | 2002
- 767
-
Construction of (Nd0.33Eu0.33Gd0.33)Ba2Cu3Ox phase diagram and its crystallizationHayakawa, Y. / Murai, T. / Aswal, D. K. / Kumagawa, M. et al. | 2002
- 772
-
Growth mechanism and additive effect of high-Tc superconducting crystalsChen, C. / Wondre, F. / Ryan, J. F. / Narlikar, A. V. / Samanta, S. B. et al. | 2002
- 778
-
Top-seeded solution growth of Ca-doped YBCO single crystalsLin, C. T. / Liang, B. / Chen, H. C. et al. | 2002
- 783
-
Crystal growth of YCuO2 delafossite containing triangular Cu planesIsawa, K. / Nagano, M. / Yamada, K. et al. | 2002
- 787
-
Bulk single-crystal growth of strontium ruthenates by a floating-zone methodIkeda, S. I. / Azuma, U. / Shirakawa, N. / Nishihara, Y. / Maeno, Y. et al. | 2002
- 792
-
Growth of bulk Pr2-xCexCuO4+d single crystals by B2O3 encapsulated flux techniqueJayavel, R. / Mochiku, T. / Ooi, S. / Hirata, K. et al. | 2002
- 796
-
Crystal growth of SrCu2O3 under high pressureLoffert, A. / Gross, C. / Assmus, W. et al. | 2002
- 801
-
Crystal growth of Ca12Al14O33 by the floating zone methodWatauchi, S. / Tanaka, I. / Hayashi, K. / Hirano, M. / Hosono, H. et al. | 2002
- 806
-
Growth of large La1-xSrxMnO3 single crystals under argon pressure by the floating-zone techniquePrabhakaran, D. / Coldea, A. I. / Boothroyd, A. T. / Blundell, S. J. et al. | 2002
- 810
-
Floating zone growth and properties of La1-xAxMnO3 (A=Ca,Sr) single crystalsShulyatev, D. / Karabashev, S. / Arsenov, A. / Mukovskii, Y. / Zverkov, S. et al. | 2002
- 815
-
Growth of large La2-xSrxNiO4+d single crystals by the floating-zone techniquePrabhakaran, D. / Isla, P. / Boothroyd, A. T. et al. | 2002
- 820
-
Historical review of quartz crystal growthIwasaki, F. / Iwasaki, H. et al. | 2002
- 828
-
Kinetics of dissolution and state of silica in hydrothermal solutions of Na2CO3 and NaOH, and accelerated method for the quartz crystal characterization against growth rateBalitsky, V. S. / Kurashige, M. / Balitskaya, L. V. / Iwasaki, H. et al. | 2002
- 833
-
Experimental study of the simultaneous dissolution and growth of quartz and topazBalitsky, V. S. / Balitskaya, L. V. / Lu, T. / Shigley, J. E. et al. | 2002
- 837
-
OH impurities in GaPO4 crystals: correlation between infrared absorption and mass loss during thermal treatmentJacobs, K. / Hofmann, P. / Klimm, D. et al. | 2002
- 843
-
Growth striations in GaPO4 single crystals obtained under hydrothermal conditionsBarz, R. U. / Grassl, M. / Gille, P. et al. | 2002
- 848
-
Piezoelectric single crystal Pb[(Zn1/3Nb2/3)0.93Ti0.07] O3 (PZNT 93/7) for ultrasonic transducersHarada, K. / Hosono, Y. / Kobayashi, T. / Yamashita, Y. / Wada, S. / Tsurumi, T. et al. | 2002
- 853
-
Growth of 3-in single crystals of piezoelectric Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 by the supported solution Bridgman methodMatsushita, M. / Tachi, Y. / Echizenya, K. et al. | 2002
- 858
-
Growth of Co-doped (Ba,Sr)TiO3 single crystals and their characterizationMadeswaran, S. / Giridharan, N. V. / Jayavel, R. / Subramanian, C. et al. | 2002
- 864
-
One possible mechanism of spiral/footing growth of Cz-grown Li6Gd(BO3)3Chaminade, J. P. / Viraphong, O. / Miyazawa, S. et al. | 2002
- 869
-
Growth of luminescent Zn2SiO4:Mn2+ particles inside oxidized porous silicon: emergence of yellow luminescenceTaghavinia, N. / Lerondel, G. / Makino, H. / Yamamoto, A. / Yao, T. / Kawazoe, Y. / Goto, T. et al. | 2002
- 874
-
X-ray diffraction and FTIR spectroscopy of heat treated R2O3:3Ga2O3:4B2O3 systemsBeregi, E. / Watterich, A. / Madarasz, J. / Toth, M. / Polgar, K. et al. | 2002
- 879
-
Growth of high-melting sesquioxides by the heat exchanger methodPeters, V. / Bolz, A. / Petermann, K. / Huber, G. et al. | 2002
- 884
-
Growth and crystal structure of the BeAl6O10 single crystalsAlimpiev, A. I. / Merkulov, A. A. / Solntsev, V. P. / Tsvetkov, E. G. / Matrosov, V. N. / Pestryakov, E. V. et al. | 2002
- 890
-
Growth and characterization of deuterated analog of l-arginine phosphate single crystalsHaja Hameed, A. S. / Ravi, G. / Ilangovan, R. / Nixon Azariah, A. / Ramasamy, P. et al. | 2002
- 894
-
Influence of neutral environment in the growth of Cr-doped LiCAF/LiSAF crystals: X-ray powder diffraction and EPR analysisVazquez, R. M. / Santos, M. T. / Lopez, F. J. / Bravo, D. / Dieguez, E. et al. | 2002
- 899
-
Peculiarities of the growth of disordered Na, R-fluorite (R=Y, Ce-Lu) single crystalsBlistanov, A. A. / Chernov, S. P. / Karimov, D. N. / Ouvarova, T. V. et al. | 2002
- 905
-
Nitride semiconductors-impact on the future worldAkasaki, I. et al. | 2002
- 912
-
Growth and characterization of freestanding GaN substratesMotoki, K. / Okahisa, T. / Nakahata, S. / Matsumoto, N. / Kimura, H. / Kasai, H. / Takemoto, K. / Uematsu, K. / Ueno, M. / Kumagai, Y. et al. | 2002
- 922
-
Bulk GaN growth by direct synthesis methodNishino, K. / Kikuta, D. / Sakai, S. et al. | 2002
- 926
-
The effect of metallic catalysts on the synthesis of GaN micro-crystalsRoh, C. H. / Park, Y. J. / Kim, E. K. / Shim, K. B. et al. | 2002
- 931
-
GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysisHirako, A. / Yoshitani, M. / Nishibayashi, M. / Nishikawa, Y. / Ohkawa, K. et al. | 2002
- 936
-
Quantum chemical study of gas-phase reactions of trimethylaluminium and triethylaluminium with ammonia in III-V nitride semiconductor crystal growthIkenaga, M. / Nakamura, K. / Tachibana, A. / Matsumoto, K. et al. | 2002
- 942
-
Key issues for obtaining high-quality GaN films by two-flow metalorganic vapor phase epitaxyMorimoto, K. / Inoue, N. et al. | 2002
- 947
-
Relaxation of misfit-induced stress in nitride-based heterostructuresTerao, S. / Iwaya, M. / Sano, T. / Nakamura, T. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2002
- 951
-
Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaNIwaya, M. / Terao, S. / Sano, T. / Ukai, T. / Nakamura, R. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2002
- 956
-
Metalorganic vapor phase epitaxy growth of AlGaN/GaN heterostructures on sapphire substratesHiroki, M. / Maeda, N. / Kobayashi, N. et al. | 2002
- 961
-
MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectorsNakada, N. / Ishikawa, H. / Egawa, T. / Jimbo, T. / Umeno, M. et al. | 2002
- 968
-
MOVPE growth and characterization of Al1-xInxN/GaN multiple layersKosaki, M. / Mochizuki, S. / Nakamura, T. / Watanabe, Y. / Yukawa, Y. / Nitta, S. / Yamaguchi, S. / Amano, H. / Akasaki, I. et al. | 2002
- 972
-
Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H-SiC substrate by LP-MOVPE for deep-UV emissionTakano, T. / Kurimoto, M. / Yamamoto, J. / Kawanishi, H. et al. | 2002
- 978
-
Growth of GaN and related materials by gas-source molecular-beam epitaxy using uncracked ammonia gasYoshida, S. et al. | 2002
- 983
-
Effect of hydrogen on morphological changes in columnar structure of GaN grown by ECR-MBEAraki, T. / Onogi, A. / Juni, N. / Nanishi, Y. et al. | 2002
- 988
-
Overgrowth of GaN layer on GaN nano-columns by RF-molecular beam epitaxyKusakabe, K. / Kikuchi, A. / Kishino, K. et al. | 2002
- 993
-
Effect of sapphire substrate nitridation on determining rotation domain in GaN growthYamaguchi, T. / Araki, T. / Saito, Y. / Kano, K. / Kanazawa, H. / Nanishi, Y. / Teraguchi, N. / Suzuki, A. et al. | 2002
- 998
-
In-situ real-time analysis on strain relaxation process in GaN growth on sapphire by RF-MBEXu, K. / Yano, N. / Jia, A. W. / Yoshikawa, A. / Takahashi, K. et al. | 2002
- 1003
-
Polarity control of GaN grown on sapphire substrate by RF-MBEXu, K. / Yano, N. / Jia, A. W. / Yoshikawa, A. / Takahashi, K. et al. | 2002
- 1008
-
GaN growth by compound source molecular beam epitaxyHonda, T. / Sato, K. / Hashimoto, T. / Shinohara, M. / Kawanishi, H. et al. | 2002
- 1012
-
Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxyOnojima, N. / Suda, J. / Matsunami, H. et al. | 2002
- 1017
-
Growth of high-quality InN using low-temperature intermediate layers by RF-MBESaito, Y. / Yamaguchi, T. / Kanazawa, H. / Kano, K. / Araki, T. / Nanishi, Y. / Teraguchi, N. / Suzuki, A. et al. | 2002
- 1022
-
Effect of atomic hydrogen irradiation on native oxides of InN surfaceOhashi, T. / Saito, Y. / Maruyama, T. / Nanishi, Y. et al. | 2002
- 1027
-
MBE growth of Eu- or Tb-doped GaN and its optical propertiesBang, H. / Morishima, S. / Li, Z. / Akimoto, K. / Nomura, M. / Yagi, E. et al. | 2002
- 1032
-
Effect of GaN buffer layer on crystallinity of InN grown on (111)GaAsGuo, Q. / Okada, A. / Kidera, H. / Tanaka, T. / Nishio, M. / Ogawa, H. et al. | 2002
- 1037
-
Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor depositionYoshida, S. / Kikawa, J. / Itoh, Y. et al. | 2002
- 1042
-
NH3 flow rates dependence of crystallinity in GaN thin films grown by reactive close-spaced method at low temperatureWatanabe, Y. / Sano, M. et al. | 2002
- 1047
-
Electron microscopy analyses of microstructures in ELO-GaNKuwano, N. / Horibuchi, K. / Kagawa, K. / Nishimoto, S. / Sueyoshi, M. et al. | 2002
- 1055
-
Carrier-gas dependence of ELO GaN grown by hydride VPEMiyake, H. / Bohyama, S. / Fukui, M. / Hiramatsu, K. / Iyechika, Y. / Maeda, T. et al. | 2002
- 1060
-
Reduction of defect density in GaN epilayer having buried Ga metal by MOCVDSumiya, M. / Kurumasa, Y. / Ohtsuka, K. / Kuwahara, K. / Takano, Y. / Fuke, S. et al. | 2002
- 1065
-
Reduction of threading dislocation density in AlXGa1-XN grown on periodically grooved substratesMochizuki, S. / Detchprohm, T. / Sano, S. / Nakamura, T. / Amano, H. / Akasaki, I. et al. | 2002
- 1070
-
Microstructures of two-step facet-controlled ELO-GaN grown by MOVPE method-effect of mask geometryHoribuchi, K. / Kuwano, N. / Miyake, H. / Hiramatsu, K. et al. | 2002
- 1075
-
Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolutionYoshimoto, M. / Saraie, J. / Nakamura, S. et al. | 2002
- 1079
-
Heteroepitaxial growth of gallium nitride on (111)GaAs substrates by radio frequency magnetron sputteringGuo, Q. X. / Okada, A. / Kidera, H. / Tanaka, T. / Nishio, M. / Ogawa, H. et al. | 2002
- 1084
-
Comparison of GaN growth processes on GaAs(111)A and (111)B substrates studied by ab initio calculationMatsuo, Y. / Kumagai, Y. / Irisawa, T. / Koukitu, A. et al. | 2002
- 1089
-
Growth parameter dependence of HVPE GaN and polarity and crystal quality of the grown layersNamerikawa, M. / Sato, T. / Takahashi, O. / Suemasu, T. / Hasegawa, F. et al. | 2002
- 1094
-
Effect of buffer layer on the growth of GaN on Si substrateLee, J. W. / Jung, S. H. / Shin, H. Y. / Lee, I. H. / Yang, C. W. / Lee, S. H. / Yoo, J. B. et al. | 2002
- 1099
-
Fabrication of GaN/AlGaN heterostructures on a (111)Si substrate by selective MOVPEKato, T. / Honda, Y. / Yamaguchi, M. / Sawaki, N. et al. | 2002
- 1104
-
Investigation of initial growth process for GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-assisted MBEYodo, T. / Ando, H. / Nosei, D. / Harada, Y. / Tamura, M. et al. | 2002
- 1110
-
Growth of wurtzite-GaN on Si(211) by metalorganic vapor phase epitaxyChen, X. F. / Honda, Y. / Kato, T. / Sawaki, N. et al. | 2002
- 1114
-
Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxySuda, J. / Matsunami, H. et al. | 2002
- 1118
-
New oxide crystal (La,Sr)(Al,Ta)O3 as substrate for GaN epitaxyukasiewicz, T. / Swirkowicz, M. / Sakowska, H. / Turos, A. / Leszczynski, M. / Ratajczak, R. et al. | 2002
- 1124
-
Effects of growth temperature in selective-area growth of cubic GaN on GaAs (100) by MOVPESanorpim, S. / Wu, J. / Onabe, K. / Shiraki, Y. et al. | 2002
- 1129
-
Structural analysis of Si-doped AlGaN/GaN multi-quantum wellsNakamura, T. / Mochizuki, S. / Terao, S. / Sano, T. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2002
- 1133
-
Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layersTabuchi, M. / Kyouzu, H. / Takeda, Y. / Yamaguchi, S. / Amano, H. / Akasaki, I. et al. | 2002
- 1139
-
Characterization of local structures around In atoms in Ga1-xInx layers by fluorescence EXAFS measurementsTabuchi, M. / Katou, D. / Kyouzu, H. / Takeda, Y. / Yamaguchi, S. / Amano, H. / Akasaki, I. et al. | 2002
- 1143
-
Influence of lattice polarity on wurzite GaN{0001} decomposition as studied by in situ gravimetric monitoring methodMayumi, M. / Satoh, F. / Kumagai, Y. / Takemoto, K. / Koukitu, A. et al. | 2002
- 1148
-
Growth and characterizations of InGaN on N- and Ga-polarity GaN grown by plasma-assisted molecular-beam epitaxyShen, X. Q. / Ide, T. / Shimizu, M. / Okumura, H. et al. | 2002
- 1153
-
CAICISS characterization of GaN films grown by pulsed laser depositionOhta, J. / Fujioka, H. / Furusawa, M. / Sasaki, A. / Yoshimoto, M. / Koinuma, H. / Sumiya, M. / Oshima, M. et al. | 2002
- 1158
-
G-GIXD characterization of GaN grown by laser MBETakahashi, H. / Ohta, J. / Fujioka, H. / Oshima, M. / Kimura, M. et al. | 2002
- 1163
-
Low-pressure MOCVD growth of GaN/AlGaN multiple quantum wells for intersubband transitionsHoshino, K. / Someya, T. / Hirakawa, K. / Arakawa, Y. et al. | 2002
- 1167
-
Valence transition of Eu ions in GaN near the surfaceMaruyama, T. / Morishima, S. / Bang, H. / Akimoto, K. / Nanishi, Y. et al. | 2002
- 1172
-
Effects of internal piezoelectric field on electronic states of InGaN quantum dots grown on GaNSaito, T. / Arakawa, Y. et al. | 2002
- 1176
-
On the capacitance-voltage characteristics of Al/BaTiO3/GaN MFS structuresSenthil Kumar, M. / Sumathi, R. R. / Giridharan, N. V. / Jayavel, R. / Kumar, J. et al. | 2002
- 1180
-
Growth of large high-quality SiC single crystalsOhtani, N. / Fujimoto, T. / Katsuno, M. / Aigo, T. / Yashiro, H. et al. | 2002
- 1187
-
Evolution of domain walls in 6H- and 4H-SiC single crystalsSiche, D. / Rost, H. J. / Doerschel, J. / Schulz, D. / Wollweber, J. et al. | 2002
- 1192
-
Mechanism of nitrogen incorporation in sublimation growth of SiCNaitoh, M. / Hara, K. / Hirose, F. / Onda, S. et al. | 2002
- 1196
-
Computational study on the SiC sublimation growthBottcher, K. / Schulz, D. et al. | 2002
- 1202
-
Synthesis and growth of 3C-SiC crystals from solution at 950degreeCTanaka, A. / Shiozaki, N. / Katsuno, H. et al. | 2002
- 1206
-
Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactorTsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K. et al. | 2002
- 1213
-
High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor depositionNakazawa, S. / Kimoto, T. / Hashimoto, K. / Matsunami, H. et al. | 2002
- 1219
-
SiC homoepitaxy on Al-ion-implanted layers for fabricating power device structuresImaizumi, M. / Tanimura, J. / Tarui, Y. / Sugimoto, H. / Ohtsuka, K. / Takami, T. / Ozeki, T. et al. | 2002
- 1224
-
Selective homoepitaxy of 4H-SiC on (0001) and (1120) masked substratesChen, Y. / Kimoto, T. / Takeuchi, Y. / Matsunami, H. et al. | 2002
- 1230
-
Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxySyvajarvi, M. / Yakimova, R. / Kakanakova-Georgieva, A. / Sridhara, S. G. / Linnarsson, M. K. / Janzen, E. et al. | 2002
- 1235
-
Crystal growth of silicon carbide in hydrogen atmosphere by sublimation close space techniqueFurusho, T. / Lilov, S. K. / Ohshima, S. / Nishino, S. et al. | 2002
- 1239
-
A proposal for CVD growth of 15R-SiC by observing the etch pits on 15R-SiC (0001) C-faceNishiguchi, T. / Masuda, Y. / Ohshima, S. / Nishino, S. et al. | 2002
- 1244
-
3C-SiC hetero-epitaxial growth on undulant Si(001) substrateNagasawa, H. / Yagi, K. / Kawahara, T. et al. | 2002
- 1250
-
Lateral over-growth of 3C-SiC on patterned Si(111) substratesNishino, S. / Jacob, C. / Okui, Y. / Ohshima, S. / Masuda, Y. et al. | 2002
- 1254
-
In situ observation of reflection high-energy electron diffraction during the initial growth of SiC on Si using dimethylsilaneYasui, K. / Narita, Y. / Inubushi, T. / Akahane, T. et al. | 2002
- 1260
-
Growth kinetics in plasma CVD of a-SiC films from monomethylsilane revealed by in situ spectroscopyKaneko, T. / Miyakawa, N. / Yamazaki, H. / Iikawa, Y. et al. | 2002
- 1264
-
Orientation dependence of solid phase growth of implantation-induced amorphous layer in 6H-SiCNakamura, T. / Matsumoto, S. / Satoh, M. et al. | 2002
- 1269
-
Device-grade homoepitaxial diamond film growthOkushi, H. / Watanabe, H. / Ri, S. / Yamanaka, S. / Takeuchi, D. et al. | 2002
- 1277
-
Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor depositionTachiki, M. / Fujisaki, T. / Taniyama, N. / Kudo, M. / Kawarada, H. et al. | 2002
- 1281
-
Growth rate of high-quality large diamond crystalsSumiya, H. / Toda, N. / Satoh, S. et al. | 2002
- 1286
-
Growth morphology and change in growth conditions of a spinel-twinned natural diamondAbduriyim, A. / Kitamura, M. et al. | 2002
- 1291
-
Molecular-beam epitaxy of InAs on GaAs substrates with hole arrays patterned by focused ion beamMorishita, Y. / Ishiguro, M. / Miura, S. / Enmei, Y. et al. | 2002
- 1296
-
Luminescence in excess of 1.5mm at room-temperature of InAs quantum dots capped by a thin InGaAs strain-reducing layerTatebayashi, J. / Nishioka, M. / Arakawa, Y. et al. | 2002
- 1301
-
Uniform formation process of self-organized InAs quantum dotsYamaguchi, K. / Kaizu, T. / Yujobo, K. / Saito, Y. et al. | 2002
- 1307
-
Effect of buffer composition on lateral alignment of self-assembled In0.4Ga0.6As island arrays grown on GaAs (311)B substratesXu, H. Z. / Akahane, K. / Song, H. Z. / Okada, Y. / Kawabe, M. et al. | 2002
- 1312
-
Fabrication of GaN quantum dots by metalorganic chemical vapor selective depositionTachibana, K. / Someya, T. / Ishida, S. / Arakawa, Y. et al. | 2002
- 1316
-
Stranski-Krastanow growth of GaN quantum dots by metalorganic chemical vapor depositionMiyamura, M. / Tachibana, K. / Someya, T. / Arakawa, Y. et al. | 2002
- 1320
-
Alloying of CdSe/ZnSe quantum dot grown by an alternate molecular beam supplyOhishi, M. / Tanaka, K. / Fujimoto, T. / Yoneta, M. / Saito, H. et al. | 2002
- 1326
-
Preparation of ferromagnetic (In,Mn)As with relatively low hole concentration and Curie temperature 50KSlupinski, T. / Oiwa, A. / Yanagi, S. / Munekata, H. et al. | 2002
- 1331
-
Preparation of ferromagnetic quaternary (In,Ga,Mn)AsSlupinski, T. / Munekata, H. / Oiwa, A. et al. | 2002
- 1334
-
Effect of low-temperature annealing on the crystallinity of III-V-based diluted magnetic semiconductorsHashimoto, Y. / Hayashi, T. / Katsumoto, S. / Iye, Y. et al. | 2002
- 1339
-
Growth and properties of new III-V diluted magnetic semiconductor Ga1-xCrxAsZaets, W. / Saito, H. / Ando, K. et al. | 2002
- 1344
-
Preparation of quaternary magnetic alloy semiconductor epilayers (Ga,Mn,Fe)AsMoriya, R. / Munekata, H. / Kondo, T. / Oiwa, A. et al. | 2002
- 1349
-
Growth and properties of (Ga,Mn)As on Si (100) substrateZhao, J. H. / Matsukura, F. / Abe, E. / Chiba, D. / Ohno, Y. / Takamura, K. / Ohno, H. et al. | 2002
- 1353
-
Molecular beam epitaxy of (Ga,Mn)NKondo, T. / Kuwabara, S. / Owa, H. / Munekata, H. et al. | 2002
- 1358
-
Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0001) showing the ferromagnetic behaviour at room temperatureSonoda, S. / Shimizu, S. / Sasaki, T. / Yamamoto, Y. / Hori, H. et al. | 2002
- 1363
-
Room temperature ferromagnetism in novel magnetic semiconductors based on II-IV-V2 chalcopyrite compoundsSato, K. / Medvedkin, G. A. / Ishibashi, T. et al. | 2002
- 1370
-
Growth of (Cd,Mn)GeP2 ferromagnetic semiconductorHirose, K. / Medvedkin, G. A. / Ishibashi, T. / Nishi, T. / Sato, K. et al. | 2002
- 1374
-
MBE growth of MnTe/ZnTe superlattices on GaAs (100) vicinal substratesSuzuki, T. / Ishibe, I. / Nabetani, Y. / Kato, T. / Matsumoto, T. et al. | 2002
- 1378
-
Growth of Fe(100) on GaAs(100) for tunnel magneto-resistance junctionsManago, T. / Mizuguchi, M. / Akinaga, H. et al. | 2002
- 1383
-
MBE growth of ultrathin Co films on a Si(111) surface with ultrathin buffer layersHyomi, K. / Murayama, A. / Oka, Y. / Kondoh, S. / Falco, C. M. et al. | 2002
- 1388
-
Surface and bulk characterization of thermally induced defects during silicon single wafer epitaxyFeichtinger, P. / Goorsky, M. S. / Muemmler, F. / Rickborn, S. / Tran, Q. / Oster, D. / Moreland, J. et al. | 2002
- 1394
-
Effects of ions and electrons in electron-beam-excited plasma assisted CVD on nanocrystalline silicon film propertiesOhshita, Y. / Yamaguchi, K. / Motegi, H. / Yamaguchi, M. et al. | 2002
- 1399
-
Effect of UV-O2, NF3/H2 surface preparation on the crystalline defects in silicon homoepitaxy (Part I. A study on photochemical surface preparation in series)Sun, M. C. / Kim, D. H. / Kwon, S. K. et al. | 2002
- 1404
-
New Si atomic-layer-controlled growth technique with thermally cracked hydride moleculeSuda, Y. / Hosoya, N. / Shiratori, D. et al. | 2002
- 1410
-
Microchannel epitaxy: an overviewNishinaga, T. et al. | 2002
- 1418
-
Crystallographic orientation dependence of impurity incorporation during epitaxial lateral overgrowth of InPSun, Y. T. / Anand, S. / Lourdudoss, S. et al. | 2002
- 1423
-
Erbium-doped GaP grown by MOMBE and their optical propertiesSuemune, I. / Uesugi, K. / Shimozawa, T. / Kumano, H. / Machida, H. / Shimoyama, N. et al. | 2002
- 1428
-
Growth kinetics of GaP in LPEInatomi, Y. / Horiuchi, K. / Kato, A. / Kuribayashi, K. et al. | 2002
- 1434
-
Silicon doping into MBE-grown GaAs at high arsenic vapor pressuresMiyagawa, A. / Yamamoto, T. / Ohnishi, Y. / Nelson, J. T. / Ohachi, T. et al. | 2002
- 1440
-
Growth and characterization of carbon-doped low-temperature GaAsHerfort, J. / Ulrici, W. / Moreno, M. / Ploog, K. H. et al. | 2002
- 1445
-
X-ray diffraction analysis of LT-GaAs multilayer structuresFukushima, S. / Mukai, K. / Otsuka, N. et al. | 2002
- 1450
-
Growth of GaAs epitaxial layers on Si substrate with porous Si intermediate layer by chemical beam epitaxySaravanan, S. / Hayashi, Y. / Soga, T. / Jimbo, T. / Umeno, M. / Sato, N. / Yonehara, T. et al. | 2002
- 1455
-
Maskless selective direct growth and doping of GaAs using a Ga-Sn low energy focused ion beam for in-situ micro-device structures fabricationCho, D. H. / Suzuki, Y. / Tanaka, M. / Hachiro, M. / Pak, K. et al. | 2002
- 1460
-
A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxyMatsunaga, Y. / Naritsuka, S. / Nishinaga, T. et al. | 2002
- 1466
-
Characterization of GaAs on MnZn ferrite with a MnAs buffer layerIto, S. / Fujioka, H. / Kiwata, H. / Ikeda, T. / Oshima, M. et al. | 2002
- 1471
-
Quantitative imaging of InGaAs/GaAs layers using transmission electron microscopy methods: characterization of stresses and chemical compositionLeifer, K. / Buffat, P. A. / Cagnon, J. / Kapon, E. / Rudra, A. / Stadelmann, P. A. et al. | 2002
- 1476
-
Dependence on In content of InxGa1-xAs quantum dots grown along GaAs multiatomic steps by MOVPEIshihara, T. / Lee, S. / Akabori, M. / Motohisa, J. / Fukui, T. et al. | 2002
- 1481
-
Metalorganic vapor phase epitaxial growth of metastable GaAs1-xBix alloyOe, K. et al. | 2002
- 1486
-
High-density V-groove InGaAs/AlGaAs quantum wires on submicron gratings by constant growth techniqueTsurumachi, N. / Son, C. S. / Kim, T. G. / Ogura, M. et al. | 2002
- 1491
-
First successful growth of TlInGaAs layers on GaAs substrates by gas source MBELee, H. J. / Mizobata, A. / Konishi, K. / Maeda, O. / Asami, K. / Asahi, H. et al. | 2002
- 1495
-
Growth of TlGaAs by low-temperature molecular-beam epitaxyKajikawa, Y. / Kubota, H. / Asahina, S. / Kanayama, N. et al. | 2002
- 1499
-
In0.53Ga0.47As/GaAs0.5Sb0.5/In0.52Al0.48As asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxyKawamura, Y. / Kondo, A. / Fujimoto, M. / Higashino, T. / Takasaki, H. / Naito, H. / Inoue, N. et al. | 2002
- 1504
-
Uniform growth of high-quality 2-in diameter In0.53Ga0.47As/In0.52Al0.48As/InP and In0.2Ga0.8As/GaAs/AlGaAs multi-quantum well wafers by MBE with GaP and GaAs decomposition sourcesSong, J. D. / Kim, J. M. / Lee, Y. T. et al. | 2002
- 1510
-
Growth, characterization and avalanche photodiode application of strain compensated InGaAsP/InAlAs superlatticeSuzuki, A. / Yokotsuka, T. / Tanaka, H. / Yamada, A. / Ohki, Y. et al. | 2002
- 1515
-
Control of dark currents in multi-quantum well solar cells fabricated by atomic H-assisted molecular beam epitaxyOkada, Y. / Seki, S. / Takeda, T. / Kawabe, M. et al. | 2002
- 1519
-
Sb surface segregation effect on the phase separation of MBE grown InAsSbMiyoshi, H. / Suzuki, R. / Amano, H. / Horikoshi, Y. et al. | 2002
- 1525
-
A novel method to grow high quality In1-xGaxAs ELO and bridge layers with high indium compositionsBalakrishnan, K. / Iida, S. / Kumagawa, M. / Hayakawa, Y. et al. | 2002
- 1531
-
The preparation of B-Sb thin films by molecular flow region PVD processKumashiro, Y. / Nakamura, K. / Doi, Y. / Hirata, K. / Yokoyama, T. / Sato, K. et al. | 2002
- 1536
-
Fabrication of wurtzite quantum-well structures of CdSe/ZnCdSe by molecular beam epitaxyMatsumura, N. / Yasui, K. / Saraie, J. et al. | 2002
- 1541
-
HRTEM observation of CdSe/ZnSe SQWs grown on vicinal GaAs substrateNabetani, Y. / Kobayashi, Y. / Ito, Y. / Kato, T. / Matsumoto, T. et al. | 2002
- 1545
-
Epitaxial growth and characterization of Cl-doped ZnSe layer by MBEYoneta, M. / Nanami, K. / Uechi, H. / Ohishi, M. / Saito, H. / Yoshino, K. et al. | 2002
- 1550
-
Composition control of CdSeTe layers grown by molecular beam epitaxyMatsumura, N. / Sakamoto, T. / Saraie, J. et al. | 2002
- 1554
-
Amorphous Zn predeposition for growth of low-defect-density CdTe films and low-optical-loss Cd1-xMnxTe magneto-optic waveguide on GaAs substrateZaets, W. / Ando, K. et al. | 2002
- 1559
-
The effect of the electron irradiation on the electrical properties of thin polycrystalline CdSe and CdS layersAntohe, S. / Ruxandra, V. / Alexandru, H. et al. | 2002
- 1566
-
Defects-induced volume deviations in ZnSeEbe, H. / Sakurai, F. / Chen, Z. Q. / Uedono, A. / Zhang, B. P. / Segawa, Y. / Suto, K. / Nishizawa, J. i. et al. | 2002
- 1570
-
Luminescence properties of lithium-doped ZnS epitaxial layers grown by MOCVDNakamura, S. / Yamaguchi, J. / Takagimoto, S. / Yamada, Y. / Taguchi, T. et al. | 2002
- 1575
-
Preparation and Raman spectra of ZnSe/GaAs heteroepitaxial layersMitsumoto, T. / Kado, N. / Kitagawa, H. / Kitahara, K. / Mizuno, K. / Noda, Y. et al. | 2002
- 1580
-
Photoluminescence spectra of arsenic-doped ZnTe films grown by metalorganic vapor phase epitaxy (MOVPE) using triethylarsineHayashida, K. / Tanaka, T. / Nishio, M. / Chang, Y. / Wang, J. / Wang, S. / Guo, Q. / Ogawa, H. et al. | 2002
- 1585
-
Crystalline structure of CdTe directly grown on hydrogen-terminated Si(111) without pre-heat treatmentSeto, S. / Yamada, S. / Miyakawa, T. / Suzuki, K. et al. | 2002
- 1589
-
Structural and optical properties of Zn1-xMnxTe epilayers as diluted magnetic II-VI semiconductorsYu, Y. M. / Park, J. G. / Hyun, M. H. / Nam, S. / Byungsung, O. / Lee, K. S. / An, K. S. / Choi, Y. D. / Yoon, M. Y. / Yu, P. Y. et al. | 2002
- 1594
-
Comparison of hexagonal ZnS film properties on c- and a-sapphiresYoo, Y. Z. / Chikyow, T. / Ahmet, P. / Jin, Z. W. / Kawasaki, M. / Koinuma, H. et al. | 2002
- 1599
-
Energetics in the growth mechanism of semiconductor heteroepitaxyMiyagishima, N. / Okajima, K. / Oyama, N. / Shiraishi, K. / Takeda, K. / Ohno, T. / Ito, T. et al. | 2002
- 1603
-
A quadratic convergence method for MOVPE thermodynamic analysisHasegawa, T. / Koukitu, A. / Kumagai, Y. et al. | 2002
- 1610
-
Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrateUeno, K. / Tokuchi, S. / Saiki, K. / Koma, A. et al. | 2002
- 1615
-
Growth of CuCl nanostructures on CaF2(111) substrates by MBE-their morphology and optical spectraKawamori, A. / Edamatsu, K. / Itoh, T. et al. | 2002
- 1621
-
Charged native point defects in GaAs and other III-V compoundsHurle, D. T. et al. | 2002
- 1628
-
Experimental analysis and modeling of melt growth processesMuller, G. et al. | 2002
- 1638
-
Crystal growth under microgravity: present results and future prospects towards the International Space StationBenz, K. W. / Dold, P. et al. | 2002
- 1646
-
Protein crystal growth in space, past and futureDeLucas, L. J. / Moore, K. M. / Long, M. M. / Rouleau, R. / Bray, T. / Crysel, W. / Weise, L. et al. | 2002
- 1651
-
Effect of the axial temperature gradient on the formation of grown-in defect regions in Czochralski silicon crystals; reversion of the defect regions between the inside and outside of the Ring-OSFOkui, M. / Nishimoto, M. et al. | 2002
- 1657
-
Controlling oxygen concentration and distribution in 200mm diameter Si crystals using the electromagnetic Czochralski (EMCZ) methodWatanabe, M. / Eguchi, M. / Wang, W. / Hibiya, T. / Kuragaki, S. et al. | 2002
- 1663
-
The effects of boron impurity on the extended defects in CZ silicon crystals grown under interstitial rich conditionsTerashima, K. / Noguchi, H. et al. | 2002
- 1667
-
Variation of silicon melt viscosity with boron additionNishimura, S. / Matsumoto, S. / Terashima, K. et al. | 2002
- 1671
-
Measurement of microscopic growth rates in float zone silicon crystalsDold, P. / Schweizer, M. / Croll, A. / Benz, K. W. et al. | 2002
- 1678
-
Grown-in defects in silicon crystalsNakamura, K. / Saishoji, T. / Tomioka, J. et al. | 2002
- 1685
-
Silicon defect and impurity studies using float-zone crystal growth as a toolCiszek, T. F. / Wang, T. H. et al. | 2002
- 1692
-
Numerical simulation of effect of ampoule rotation for the growth of InGaSb by rotational Bridgman methodOzawa, T. / Hayakawa, Y. / Balakrishnan, K. / Kumagawa, M. et al. | 2002
- 1697
-
InP melts: investigation of wetting between boat materials in Bridgman growthShimizu, A. / Nishizawa, J. i. / Oyama, Y. / Suto, K. et al. | 2002
- 1701
-
Influence of temperature oscillations on the interface velocity during Bridgman crystal growthStelian, C. / Duffar, T. / Santailler, J. L. / Nicoara, I. et al. | 2002
- 1707
-
CVD growth of bulk polycrystalline ZnS and its optical propertiesZhenyi, F. / Yichao, C. / Yongliang, H. / Yaoyuan, Y. / Yanping, D. / Zewu, Y. / Hongchang, T. / Hongtao, X. / Heming, W. et al. | 2002
- 1711
-
The growth of CdTe bulk crystals using the multi-tube physical vapour transport systemSanghera, H. K. / Cantwell, B. J. / Aitken, N. M. / Brinkman, A. W. et al. | 2002
- 1716
-
Experimental and numerical study of the VGF growth of CdTe crystalOkano, Y. / Kondo, H. / Kishimoto, W. / Li, L. / Dost, S. et al. | 2002
- 1720
-
Heat treatment in semi-closed ampoule for obtaining stoichiometrically controlled cadmium tellurideZha, M. / Bissoli, F. / Zappettini, A. / Zuccalli, G. / Zanotti, L. / Paorici, C. et al. | 2002
- 1726
-
Photoluminescence study on compensating defects in CdTe:AlSong, S. H. / Wang, J. / Ishikawa, Y. / Seto, S. / Isshiki, M. et al. | 2002
- 1731
-
Growth and characterization of SPR-ZnS bulk crystalYoneta, M. / Ichino, K. / Yoshino, K. / Saito, H. / Ohishi, M. / Kobayashi, H. et al. | 2002
- 1736
-
Numerical methods for industrial vertical Bridgman growth of (Cd,Zn)TeLin, K. / Boschert, S. / Dold, P. / Benz, K. W. / Kriessl, O. / Schmidt, A. / Siebert, K. G. / Dziuk, G. et al. | 2002
- 1741
-
Modelling of the growth of ternary compound cadmium zinc telluride (in a semi-open Markov-like system) from the binary sources CdTe and ZnTeSanghera, H. K. / Cantwell, B. J. / Brinkman, A. W. et al. | 2002
- 1745
-
Optimization of VGF-growth of GaAs crystals by the aid of numerical modellingMuller, G. / Birkmann, B. et al. | 2002
- 1752
-
The axial and radial segregation due to the thermo-convection, the decrease of the melt in the ampoule and the effect of the precrystallization-zone in the semiconductor crystals grown in a Bridgman-Stockbarger system in a low gravity environmentMihailovici, M. M. / Balint, A. M. / Balint, S. et al. | 2002
- 1757
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Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growthEvstratov, I. Y. / Kalaev, V. V. / Zhmakin, A. I. / Makarov, Y. N. / Abramov, A. G. / Ivanov, N. G. / Korsakov, A. B. / Smirnov, E. M. / Dornberger, E. / Virbulis, J. et al. | 2002
- 1762
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Factors affecting the isotherm shape of semi-transparent BaF2 crystals grown by Bridgman methodBarvinschi, F. / Bunoiu, O. / Nicoara, I. / Nicoara, D. / Santailler, J. L. / Duffar, T. et al. | 2002
- 1769
-
Numerical study of interface shape control in the VGF growth of compound semiconductor crystalOkano, Y. / Kondo, H. / Dost, S. et al. | 2002
- 1773
-
Octahedral void defects in Czochralski siliconItsumi, M. et al. | 2002
- 1779
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Numerical study of transport phenomena in the THM growth of compound semiconductor crystalOkano, Y. / Nishino, S. s. / Ohkubo, S. s. / Dost, S. et al. | 2002
- 1785
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Effects of rotating magnetic fields on temperature and oxygen distributions in silicon meltKakimoto, K. et al. | 2002
- 1791
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Electrical measurements on molten TiO2 using a floating zone furnaceKatsumata, T. / Shiina, T. / Shibasaki, M. / Matsuo, T. et al. | 2002
- 1797
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Density of molten calcium fluorideJingu, S. / Chen, X. / Nishimura, S. / Oyama, Y. / Terashima, K. et al. | 2002
- 1802
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Magnetic field-induced alignment of steel microstructuresMaruta, K. / Shimotomai, M. et al. | 2002
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Effect of foreign particles: a comprehensive understanding of 3D heterogeneous nucleationLiu, X. Y. et al. | 2002
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Crystal nucleation and growth in binary phase-field theoryGranasy, L. / Borzsonyi, T. / Pusztai, T. et al. | 2002
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Characteristic lengthscales of step bunching in KDP crystal growth: in situ differential phase-shifting interferometry studyBooth, N. A. / Chernov, A. A. / Vekilov, P. G. et al. | 2002
- 1825
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Particle ordering at the initial stage of colloidal crystallization: implication for non-classical dynamic behaviorIshikawa, M. / Morimoto, H. / Maekawa, T. et al. | 2002
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Drop experiments on crystallization of InGaSb semiconductorHayakawa, Y. / Balakrishnan, K. / Komatsu, H. / Murakami, N. / Nakamura, T. / Koyama, T. / Ozawa, T. / Okano, Y. / Miyazawa, M. / Dost, S. et al. | 2002
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Crystallization from a molten zone and pendant drop under supercooling conditionsKimura, H. / Miyazaki, A. et al. | 2002
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Containerless crystallization of siliconKuribayashi, K. / Aoyama, T. et al. | 2002
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Bridgman growth of detached GeSi crystalsVolz, M. P. / Schweizer, M. / Kaiser, N. / Cobb, S. D. / Vujisic, L. / Motakef, S. / Szofran, F. R. et al. | 2002
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Buoyant-thermocapillary and pure thermocapillary convective instabilities in Czochralski systemsSchwabe, D. et al. | 2002
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Non-invasive techniques for observing the surface behavior of molten siliconHibiya, T. / Nakamura, S. / Sumiji, M. / Azami, T. et al. | 2002
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Growth of homogeneous mixed crystals of In0.3Ga0.7As by the traveling liquidus-zone methodKinoshita, K. / Hanaue, Y. / Nakamura, H. / Yoda, S. / Iwai, M. / Tsuru, T. / Muramatsu, Y. et al. | 2002
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Coarsening dynamics in off-critically quenched binary systems under microgravity conditionsEnomoto, Y. et al. | 2002
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Three-dimensional GSMAC-FEM simulations of the deformation process and the flow structure in the floating zone methodKohno, H. / Tanahashi, T. et al. | 2002
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Mathematical simulation of the traveling heater method growth of ternary semiconductor materials under suppressed gravity conditionsLent, B. / Dost, S. / Redden, R. F. / Liu, Y. et al. | 2002
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Three-dimensional analysis of flow and segregation control by slow rotation for Bridgman crystal growth in microgravityLan, C. W. / Tu, C. Y. et al. | 2002
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Features of mass transfer for the laminar melt flow along the interfaceBykova, S. V. / Golyshev, V. D. / Gonik, M. A. / Tsvetovsky, V. B. / Frjazinov, I. V. / Marchenko, M. P. et al. | 2002
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Self-assembled Ge quantum dots on Si and their applicationsWang, K. L. / Liu, J. L. / Jin, G. et al. | 2002
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Ordering and self-organized growth of Si in the Si/SiO2 superlattice systemLockwood, D. J. / Grom, G. F. / Fauchet, P. M. / Tsybeskov, L. et al. | 2002
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Proof of kinetic influence in Ge nanowire formation on Si(113)Sumitomo, K. / Zhang, Z. / Omi, H. / Bottomley, D. J. / Ogino, T. et al. | 2002
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Crystallization of fine silicon particles from silicon monoxideMamiya, M. / Kikuchi, M. / Takei, H. et al. | 2002
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Development of ballistic electron cold cathode by a low-temperature processing of polycrystalline silicon filmsIchihara, T. / Honda, Y. / Aizawa, K. / Komoda, T. / Koshida, N. et al. | 2002
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Unexpected room temperature growth of silicon dioxide crystallites on passivated porous siliconStolyarova, S. / El-Bahar, A. / Nemirovsky, Y. et al. | 2002
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Mass production of multiwalled carbon nanotubes by hydrogen arc dischargeAndo, Y. / Zhao, X. / Inoue, S. / Iijima, S. et al. | 2002
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Vapor phase preparation of super-elastic carbon micro-coilsChen, X. / Motojima, S. / Iwanga, H. et al. | 2002
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Magnetoresistance in carbon micro-coils annealed at various temperaturesFujii, M. / Matsui, M. / Motojima, S. / Hishikawa, Y. et al. | 2002
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Formation of ultrafine platinum particles in an aqueous solution with a surfactantHahakura, S. / Isoda, S. / Ogawa, T. / Moriguchi, S. / Kobayashi, T. et al. | 2002
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Fabrication and structural control of nano-structured thin films by solid-state reaction of compositionally modulated multilayersMatsui, T. / Tsuda, H. / Mabuchi, H. / Morii, K. et al. | 2002
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Composition dependence of constituent phase of Fe-Si thin film prepared by MOCVDAkiyama, K. / Ohya, S. / Konuma, S. / Numata, K. / Funakubo, H. et al. | 2002
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Structural observation of Mn silicide islands on Si(111) 7x7 surface with UHV-TEMZhang, Q. / Takeguchi, M. / Tanaka, M. / Furuya, K. et al. | 2002
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Formation of b-FeSi2 thin films using laser ablationKomuro, S. / Katsumata, T. / Morikawa, T. / Kokai, H. / Zhao, X. / Aoyagi, Y. et al. | 2002
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Growth evolution of b-FeSi2 layers grown by Sb mediated reactive deposition epitaxyMakiuchi, S. / Koga, T. / Arakawa, T. / Tomoda, W. / Maeda, Y. / Saito, K. / Tatsuoka, H. / Kuwabara, H. et al. | 2002
- 1971
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Crystal growth of b-FeSi2 by temperature gradient solution growth method using Zn solventUdono, H. / Takaku, S. / Kikuma, I. et al. | 2002
- 1976
-
Single-crystal growth of binary and ternary rare earth silicidesBehr, G. / Loser, W. / Bitterlich, H. / Graw, G. / Souptel, D. / Sampathkumaran, E. V. et al. | 2002
- 1981
-
Liquid phase growth of bulk b-FeSi2 single crystals using Sb solventKuramoto, M. / Nose, Y. / Momose, Y. / Saito, K. / Tatsuoka, H. / Kuwabara, H. et al. | 2002
- 1986
-
Cu-based multinary compounds and their crystal growth: synthesis processes, phase diagrams and control of vapor pressuresMatsushita, H. / Katsui, A. / Takizawa, T. et al. | 2002
- 1993
-
Molecular beam epitaxial growth and characterization of CuInSe2 and CuGaSe2 for device applicationsNiki, S. / Yamada, A. / Hunger, R. / Fons, P. J. / Iwata, K. / Matsubara, K. / Nishio, A. / Nakanishi, H. et al. | 2002
- 2000
-
ZnGeP2 growth: melt non-stoichiometry and defect substructureVerozubova, G. A. / Gribenyukov, A. I. / Korotkova, V. V. / Vere, A. W. / Flynn, C. J. et al. | 2002
- 2005
-
Structural properties of Cu(Ga1-xInx)ySz bulk alloysKato, T. / Hayashi, S. / Kiuchi, T. / Ishihara, Y. / Nabetani, Y. / Matsumoto, T. et al. | 2002
- 2009
-
Single-crystal growth and optical properties of undoped and Ce3+ doped CaGa2S4Hidaka, C. / Takizawa, T. et al. | 2002
- 2014
-
Lattice dynamics of the chalcopyrite and defect stannite phases in the Cu-(In,Ga)-Se systemNomura, S. / Endo, S. et al. | 2002
- 2019
-
Growth and band gap of the filled tetrahedral semiconductor LiMgNKuriyama, K. / Nagasawa, K. / Kushida, K. et al. | 2002
- 2023
-
Visualization of light dispersion and structural phase transitions with light figuresYamamoto, N. / Mamedov, N. / Shinohara, T. / Kunie, A. et al. | 2002
- 2028
-
Heteroepitaxy-new challenges and opportunities for materials engineering through molecular beam epitaxyPloog, K. H. et al. | 2002
- 2035
-
Self-organized growth of nanosized flat dots and vertical magnetic Co pillars on Au(111)Fruchart, O. / Renaud, G. / Deville, J. P. / Barbier, A. / Scheurer, F. / Klaua, M. / Barthel, J. / Noblet, M. / Ulrich, O. / Mane-Mane, J. et al. | 2002
- 2041
-
Collision processes between sputtered particles on high speed rotating substrate and atomic mass dependence of sticking coefficientObara, K. / Fu, Z. / Arima, M. / Yamada, T. / Fujikawa, T. / Imamura, N. / Terada, N. et al. | 2002
- 2046
-
Thin-film epitaxial growth of the Heusler alloy Cu2AlMnBach, H. / Westerholt, K. / Geiersbach, U. et al. | 2002
- 2050
-
Preparation of superconducting epitaxial thin films of transition metal nitrides on silicon wafers by molecular beam epitaxyInumaru, K. / Okamoto, H. / Yamanaka, S. et al. | 2002
- 2055
-
Epitaxial growth of Se100-xTex alloy films deposited on (100) surfaces of KI and KBrNagashima, S. et al. | 2002
- 2061
-
Growth characteristics of CaxCd1-xF2 films on Si substrates using CaF2 buffer layerKambayashi, H. / Gotoh, T. / Maeda, H. / Tsutsui, K. et al. | 2002
- 2065
-
Crystal growth and evaporation of a triphenylboroxine thin filmIrie, S. / Sakamoto, A. / Ukeda, S. / Tokunaga, Y. / Isa, K. / Sasaki, T. / Sakurai, K. et al. | 2002
- 2071
-
Monolayer and bilayer formation of 17,19-dotetracontadiyne at a liquid/solid interfaceTakajo, D. / Fujiwara, E. / Irie, S. / Nemoto, T. / Isoda, S. / Ozaki, H. / Toda, N. / Tomii, S. / Magara, T. / Mazaki, Y. et al. | 2002
- 2076
-
Structural relationship between epitaxially grown para-sexiphenyl and mica (001) substratesPlank, H. / Resel, R. / Andreev, A. / Sariciftci, N. S. / Sitter, H. et al. | 2002
- 2082
-
Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystalsSchieber, M. / Schlesinger, T. E. / James, R. B. / Hermon, H. / Yoon, H. / Goorsky, M. et al. | 2002
- 2091
-
Growth of highly oriented LiNbO3 thin films through structure controlled metal alkoxide precursor solutionHirano, S. i. / Takeichi, Y. / Sakamoto, W. / Yogo, T. et al. | 2002
- 2098
-
Facet formation during fiber pulling from the meltEpelbaum, B. M. / Hofmann, D. et al. | 2002
- 2104
-
High-quality crystal growth of organic nonlinear optical crystal DASTTsunesada, F. / Iwai, T. / Watanabe, T. / Adachi, H. / Yoshimura, M. / Mori, Y. / Sasaki, T. et al. | 2002
- 2107
-
Stability of detached-grown germanium single crystalsSchweizer, M. / Volz, M. P. / Cobb, S. D. / Vujisic, L. / Motakef, S. / Szoke, J. / Szofran, F. R. et al. | 2002
- 2112
-
Influence of pressure control on the growth of bulk GaN single crystal using a Na fluxOnda, M. / Iwahashi, T. / Okamoto, M. / Yap, Y. K. / Yoshimura, M. / Mori, Y. / Sasaki, T. et al. | 2002
- 2116
-
Plasma characteristics of a multi-cusp plasma-sputter-type ion source for thin film formation of gallium nitrideFlauta, R. / Kasuya, T. / Ohachi, T. / Wada, M. et al. | 2002
- 2121
-
Growth of Ca2Si layers on Mg2Si/Si(111) substratesMatsui, H. / Kuramoto, M. / Ono, T. / Nose, Y. / Tatsuoka, H. / Kuwabara, H. et al. | 2002
- 2125
-
Preparation of (Bi,Sb)2S3 semiconductor films by photochemical deposition methodSasaki, H. / Shibayama, K. / Ichimura, M. / Masui, K. et al. | 2002
- 2130
-
Some aspects of the importance of metastable zone width and nucleation in industrial crystallizersUlrich, J. / Strege, C. et al. | 2002
- 2136
-
Growth behaviour of crystals formed by primary nucleation on different crystalliser scalesWesthoff, G. M. / Butler, B. K. / Kramer, H. J. / Jansens, P. J. et al. | 2002
- 2142
-
Effects of operating variables on the induction period of CaCl2-Na2CO3 systemTai, C. Y. / Chien, W. C. et al. | 2002
- 2148
-
Analysis of nucleation of zeolite A from clear solutionsMarui, Y. / Irie, R. / Takiyama, H. / Uchida, H. / Matsuoka, M. et al. | 2002
- 2153
-
The effect of additives on the co-crystallisation of calcium with barium sulphateHennessy, A. J. / Graham, G. M. et al. | 2002
- 2160
-
An assessment of the formation of electrodeposited scales using scanning electron and atomic force microscopyMorizot, A. P. / Neville, A. / Taylor, J. D. et al. | 2002
- 2166
-
Removal of carbon dioxide by reactive crystallization in a scrubber-kinetics of barium carbonate crystalsChen, P. C. / Kou, K. L. / Tai, H. K. / Jin, S. L. / Lye, C. L. / Lin, C. Y. et al. | 2002
- 2172
-
Scale formation of ice from electrolyte solutions on a scraped surface heat exchanger plateVaessen, R. J. / Himawan, C. / Witkamp, G. J. et al. | 2002
- 2178
-
The effect of isotopic substitution of deuterium for hydrogen on the morphology of products precipitated from synthetic Bayer solutionsLoh, J. S. / Watling, H. R. / Parkinson, G. M. et al. | 2002
- 2183
-
Crystallization phenomena of magnesium ammonium phosphate (MAP) in a fluidized-bed-type crystallizerHirasawa, I. / Kaneko, S. / Kanai, Y. / Hosoya, S. / Okuyama, K. / Kamahara, T. et al. | 2002
- 2188
-
Secondary nucleation due to crystal-impeller and crystal-vessel collisions by population balances in CFD-modellingLiiri, M. / Koiranen, T. / Aittamaa, J. et al. | 2002
- 2194
-
Relationship between growth rate and supercooling in the formation of ice lenses in a glass powderWatanabe, K. et al. | 2002
- 2199
-
Wet calcining of trona (sodium sesquicarbonate) and bicarbonate in a mixed solventGartner, R. S. / Witkamp, G. J. et al. | 2002
- 2205
-
Controlling factor of polymorphism in crystallization processKitamura, M. et al. | 2002
- 2215
-
Molecular modelling of the crystallization of polymorphs. Part I: The morphology of HMX polymorphster Horst, J. H. / Kramer, H. J. / van Rosmalen, G. M. / Jansens, P. J. et al. | 2002
- 2221
-
Polymorphic transformation of dl-methionine crystals in aqueous solutionsYamanobe, M. / Takiyama, H. / Matsuoka, M. et al. | 2002
- 2227
-
X-ray and vibrational spectroscopic study on polymorphism of trielaidinDohi, K. / Kaneko, F. / Kawaguchi, T. et al. | 2002
- 2233
-
Dissolution and phase transition of pharmaceutical compoundsGarcia, E. / Hoff, C. / Veesler, S. et al. | 2002
- 2240
-
Crystal growth of drug materials by spherical crystallizationSzabo-Revesz, P. / Hasznos-Nezdei, M. / Farkas, B. / Gocz, H. / Pintye-Hodi, K. / Ers, I. et al. | 2002
- 2246
-
Axial dispersion in a Kureha Crystal Purifier (KCP)Otawara, K. / Matsuoka, T. et al. | 2002
- 2251
-
Influences of reflux ratio on separation and purification of acrylic acid by inclined column crystallizerFunakoshi, K. / Uchida, H. / Takiyama, H. / Matsuoka, M. et al. | 2002
- 2257
-
Dynamic modeling and simulation of eutectic freeze crystallizationHimawan, C. / Vaessen, R. J. / Kramer, H. J. / Seckler, M. M. / Witkamp, G. J. et al. | 2002
- 2264
-
Report on the Meetings of the IOCG Executive Committee, Council and General Assembly held during ICCG-13/ICVGE-11 in Kyoto, Japan, 30 July-4 August 2001Nishinaga, T. et al. | 2002
- 2267
-
Author Index| 2002
- 2298
-
Subject Index| 2002
- vi
-
Contents ICCG-13/ICVGE-11 Part 3| 2002
- vi
-
ICCG-13/ICVGE-11| 2002
- vi
-
Contents ICCG-13/ICVGE-11 Part 2| 2002
- xiv
-
Chairpersons` prefaceNishinaga, T. / Takahashi, K. et al. | 2002
- xviii
-
Editors` preface| 2002
- xx
-
Contents ICCG-13/ICVGE-11 Part 1| 2002