Neutron scattering study of structural and magnetic properties of hexagonal MnTe (Englisch)
- Neue Suche nach: Szuszkiewicz, W.
- Neue Suche nach: Hennion, B.
- Neue Suche nach: Witkowska, B.
- Neue Suche nach: Lusakowska, E.
- Neue Suche nach: Mycielski, A.
- Neue Suche nach: Szuszkiewicz, W.
- Neue Suche nach: Hennion, B.
- Neue Suche nach: Witkowska, B.
- Neue Suche nach: Lusakowska, E.
- Neue Suche nach: Mycielski, A.
In:
PHYSICA STATUS SOLIDI C CONFERENCES
;
2
, 3
;
1141-1146
;
2005
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Neutron scattering study of structural and magnetic properties of hexagonal MnTe
-
Beteiligte:Szuszkiewicz, W. ( Autor:in ) / Hennion, B. ( Autor:in ) / Witkowska, B. ( Autor:in ) / Lusakowska, E. ( Autor:in ) / Mycielski, A. ( Autor:in )
-
Erschienen in:PHYSICA STATUS SOLIDI C CONFERENCES ; 2, 3 ; 1141-1146
-
Verlag:
- Neue Suche nach: Wiley - VCH
-
Erscheinungsdatum:01.01.2005
-
Format / Umfang:6 pages
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 530
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 530 -
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis – Band 2, Ausgabe 3
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 947
-
MOCVD growth of group III nitrides for high power, high frequency applicationsdi Forte Poisson, M.-A. / Magis, M. / Tordjman, M. / Sarazin, N. / di Persio, J. et al. | 2005
- 956
-
The effect of AlGaN and SiN interlayers on GaN/Si(111)Charles, M. B. / Kappers, M. J. / Humphreys, C. J. et al. | 2005
- 960
-
Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD systemKakanakova-Georgieva, A. / Kasic, A. / Hallin, C. / Monemar, B. / Janzen, E. et al. | 2005
- 964
-
Solar blind detectors based on AlGaN grown on sapphireDuboz, J.-Y. / Grandjean, N. / Omnes, F. / Reverchon, J.-L. / Mosca, M. et al. | 2005
- 972
-
Modeling of elastic, piezoelectric and optical properties of vertically correlated GaN/AlN quantum dotsJurczak, G. / Lepkowski, S. P. / Dluzewski, P. / Suski, T. et al. | 2005
- 976
-
Nitride-based surface acoustic wave devices and applicationsCalle, F. / Pedros, J. / Palacios, T. / Grajal, J. et al. | 2005
- 984
-
Novel noncontact thickness metrology for backend manufacturing of wide bandgap light emitting devicesWalecki, W. J. / Lai, K. / Souchkov, V. / Van, P. / Lau, S. H. / Koo, A. et al. | 2005
- 990
-
Electrochemical etching and CV-profiling of GaNWolff, T. / Rapp, M. / Rotter, T. et al. | 2005
- 994
-
Classic and novel methods of dislocation reduction in heteroepitaxial nitride layersJasinski, J. et al. | 2005
- 1006
-
Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaNJarasiunas, K. / Malinauskas, T. / Kadys, A. / Aleksiejunas, R. / Sudzius, M. / Miasojedovas, S. / Jursenas, S. / Zukauskas, A. / Gogova, D. / Kakanakova-Georgieva, A. et al. | 2005
- 1010
-
Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wellsChwalisz, B. / Wysmolek, A. / Korona, K. P. / Stepniewski, R. / Skierbiszewski, C. / Grzegory, I. / Porowski, S. et al. | 2005
- 1014
-
Resonant tunnelling and intersubband absorption in AlN - GaN superlatticesBaumann, E. / Giorgetta, F. R. / Hofstetter, D. / Wu, H. / Schaff, W. J. / Eastman, L. F. / Kirste, L. et al. | 2005
- 1019
-
Screening of built-in electric fields in group III-nitride laser diodes observed by means of hydrostatic pressureFranssen, G. / Suski, T. / Perlin, P. / Bohdan, R. / Bercha, A. / Adamiec, P. / Dybala, F. / Trzeciakowski, W. / Kazlauskas, K. / Tamulaitis, G. et al. | 2005
- 1023
-
Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wellsKazlauskas, K. / Tamulatis, G. / Jursenas, S. / Zukauskas, A. / Springis, M. / Cheng, Y.-C. / Wang, H.-C. / Huang, C.-F. / Yang, C. C. et al. | 2005
- 1027
-
The fundamental absorption edge of high crystalline quality GaN and that of amorphous GaN grown at low temperatureTrautman, P. / Pakula, K. / Baranowski, J. M. et al. | 2005
- 1031
-
Bowing of GaN bulk crystals with mismatched epitaxial structures of (AlInGa)NSarzynski, M. / Krysko, M. / Czernecki, R. / Targowski, G. / Krowicki, K. / Lucznik, B. / Grzegory, I. / Leszczynski, M. / Porowski, S. et al. | 2005
- 1035
-
Infrared and visible emission from electroluminescent device based on GaN: ErWojdak, M. / Braud, A. / Doualan, J. L. / Moncorge, R. / Wojtowicz, T. / Ruterana, P. / Marie, P. / Colder, A. / Eimer, S. / Mechin, L. et al. | 2005
- 1039
-
Giant traps associated with extended defects in GaN and SiCLook, D. C. / Fang, Z.-Q. / Krtschil, A. / Krost, A. et al. | 2005
- 1047
-
Theoretical model of transport characteristics of AlGaN/GaN high electron mobility transistorsAsgari, A. / Kalafi, M. / Faraone, L. et al. | 2005
- 1056
-
Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structuresGodlewski, M. / Ivanov, V. Y. / Lusakowska, E. / Bozek, R. / Miasojedovas, S. / Jursenas, S. / Kazlauskas, K. / Zukauskas, A. / Goldys, E. M. / Phillips, M. R. et al. | 2005
- 1060
-
Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMTKaminska, E. / Piotrowska, A. / Szczesny, A. / Kuchuk, A. / Lukasiewicz, R. / Golaszewska, K. / Kruszka, R. / Barcz, A. / Jakiela, R. / Dynowska, E. et al. | 2005
- 1065
-
GaN growth by sublimation sandwich methodKaminski, M. / Waszkiewicz, A. / Podsiadlo, S. / Zachara, J. / Ostrowski, A. / Gebicki, W. / Turos, A. / Strupinski, W. et al. | 2005
- 1069
-
Recombination dynamics in GaN/AlGaN low dimensional structures obtained by SiH~4 treatmentKorona, K. P. / Chwalisz, B. / Wysmolek, A. / Stepniewski, R. / Pakula, K. / Baranowski, J. M. / Kuhl, J. et al. | 2005
- 1073
-
Spontaneous superlattice formation in MOVPE growth of AlGaNPakula, K. / Bozek, R. / Baranowski, J. M. / Jasinski, J. et al. | 2005
- 1077
-
Close-spaced crystal growth and characterization of BP crystalsSchmitt, J. O. / Edgar, L. J. H. / Liu, L. / Nagarajan, R. / Szyszko, T. / Podsiadlo, S. / Wojciech, G. et al. | 2005
- 1081
-
The atomic structure of defects formed during doping of GaN with rare earth ionsWojtowicz, T. / Ruterana, P. / Lorenz, K. / Wahl, U. / Alves, E. / Ruffenach, S. / Halambalakis, G. / Briot, O. et al. | 2005
- 1085
-
Coupled II - VI semiconductor quantum dots: manipulation of spin polarization by inter-dot exchange interactionLee, S. / Furdyna, J. K. / Dobrowolska, M. et al. | 2005
- 1098
-
ZnSe-based laser diodes: New approachesGust, A. / Kruse, C. / Klude, M. / Roventa, E. / Kroger, R. / Sebald, K. / Lohmeyer, H. / Brendemuhl, B. / Gutowski, J. / Hommel, D. et al. | 2005
- 1106
-
A new approach to the growth of ZnO by vapour transportMunoz-Sanjose, V. / Tena-Zaera, R. / Martinez-Tomas, C. / Zuniga-Perez, J. / Hassani, S. / Triboulet, R. et al. | 2005
- 1115
-
Contactless CVT growth of ZnO crystalsGrasza, K. / Mycielski, A. et al. | 2005
- 1119
-
p-type conducting ZnO: fabrication and characterisationKaminska, E. / Piotrowska, A. / Kossut, J. / Butkute, R. / Dobrowolski, W. / Lukasiewicz, R. / Barcz, A. / Jakiela, R. / Dynowska, E. / Przezdziecka, E. et al. | 2005
- 1125
-
Growth by atomic layer epitaxy and characterization of thin films of ZnOKopalko, K. / Wojcik, A. / Godlewski, M. / Lusakowska, E. / Paszkowicz, W. / Domagala, J. Z. / Godlewski, M. M. / Szczerbakow, A. / Swiatek, K. / Dybko, K. et al. | 2005
- 1131
-
Multiphonon processes in ZnOKunert, H. W. / Brink, D. J. / Auret, F. D. / Malherbe, J. / Barnas, J. / Kononenko, V. et al. | 2005
- 1137
-
Catalyst growth of single crystal aligned ZnO nanorods on ZnO thin filmsZhao, D. / Andreazza, C. / Andreazza, P. et al. | 2005
- 1141
-
Neutron scattering study of structural and magnetic properties of hexagonal MnTeSzuszkiewicz, W. / Hennion, B. / Witkowska, B. / Lusakowska, E. / Mycielski, A. et al. | 2005
- 1147
-
Vibrational spectra of hydrogenated CdTePolit, J. / Kisiel, A. / Mycielski, A. / Marcelli, A. / Sheregii, E. / Cebulski, J. / Piccinini, M. / Guidi, M. C. / Robouch, B. V. / Nucara, A. et al. | 2005
- 1155
-
Defect distribution in CdTe after Cd saturated annealingBelas, E. / Grill, R. / Horodysky, P. / Moravec, P. / Franc, J. / Hoschl, P. et al. | 2005
- 1161
-
ZnS thin films deposited by spray pyrolysis techniqueDedova, T. / Krunks, M. / Volobujeva, O. / Oja, I. et al. | 2005
- 1167
-
Structural and optical characterization of epitaxial layers of CdTe/PbTe grown on BaF~2 (111) substratesDziawa, P. / Taliashvili, B. / Domuchowski, W. / Kowalczyk, L. / Lusakowska, E. / Mycielski, A. / Osinniy, V. / Story, T. et al. | 2005
- 1172
-
Electrical and optical properties of r.f. co-sputtered ZnTe-Cu thin filmsEl Akkad, F. / Thomas, M. et al. | 2005
- 1178
-
Point defect structure of CdTeCl crystals at high temperaturesFochuk, P. / Panchuk, O. / Shcherbak, L. / Siffert, P. et al. | 2005
- 1184
-
Dynamics of spin interactions in II - Mn - VI semiconductors studied with time-resolved optically detected magnetic resonanceYatsunenko, S. / Swiatek, K. / Ivanov, V. Y. / Khachapuridze, A. / Godlewski, M. et al. | 2005
- 1189
-
Photoluminescence mapping of p-to-n conversion in CdTe by annealing in Cd atmosphereHorodysky, P. / Belas, E. / Franc, J. / Grill, R. / Hlidek, P. / Toth, A. L. et al. | 2005
- 1194
-
Efficiency spectrum of a CdTe X- and gamma-ray detector with a Schottky diodeKosyachenko, L. A. / Maslyanchuk, O. L. et al. | 2005
- 1200
-
Atomic absorption photometry of excess Zn in ZnOLott, K. / Shinkarenko, S. / Kirsanova, T. / Turn, L. / Grebennik, A. / Vishnjakov, A. et al. | 2005
- 1206
-
Composition and properties of ZnS thin films prepared by chemical bath deposition from acidic and basic solutionsMakhova, L. V. / Konovalov, I. / Szargan, R. / Aschkenov, N. / Schubert, M. / Chasse, T. et al. | 2005
- 1212
-
Blocking of photoconductor surfaces by thin graded-gap layers as technique to serious improvement of excess charge carrier excitation efficiencyDrugova, A. / Kholodnov, V. / Nikitin, M. et al. | 2005
- 1218
-
Preparation and characterization of hexagonal MnTe and ZnO layersPrzezdziecka, E. / Kaminska, E. / Dynowska, E. / Butkute, R. / Dobrowolski, W. / Kepa, H. / Jakiela, R. / Aleszkiewicz, M. / Lusakowska, E. / Janik, E. et al. | 2005
- 1224
-
Fe photoionization transitions in ZnSSe: Fe crystals - photo-ESR studiesSwiatek, K. / Godlewski, M. / Surkova, T. P. et al. | 2005
- 1228
-
The properties of surface textured ZnO:Al films for thin film solar cellsYoo, J. / Lee, J. / Kim, S. / Yoon, K. / Park, I. J. / Dhungel, S. K. / Karunagaran, B. / Mangalaraj, D. / Yi, J. et al. | 2005
- 1233
-
X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxyZuniga-Perez, J. / Martinez-Tomas, C. / Munoz-Sanjose, V. et al. | 2005