Nanoscale Germanium MOS Dielectrics - Part I: Germanium Oxynitrides (Englisch)
- Neue Suche nach: Chui, C. O.
- Neue Suche nach: Ito, F.
- Neue Suche nach: Saraswat, K. C.
- Neue Suche nach: Chui, C. O.
- Neue Suche nach: Ito, F.
- Neue Suche nach: Saraswat, K. C.
In:
IEEE TRANSACTIONS ON ELECTRON DEVICES
;
53
, 7
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1501-1508
;
2006
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Nanoscale Germanium MOS Dielectrics - Part I: Germanium Oxynitrides
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Beteiligte:
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Erschienen in:IEEE TRANSACTIONS ON ELECTRON DEVICES ; 53, 7 ; 1501-1508
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Verlag:
- Neue Suche nach: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Erscheinungsdatum:01.01.2006
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Format / Umfang:8 pages
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 621.3 / 621
- Weitere Informationen zu Dewey Decimal Classification
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- 1501
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Nanoscale germanium MOS Dielectrics-part I: germanium oxynitridesChi On Chui, / Ito, F. / Saraswat, K.C. et al. | 2006
- 1501
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REVIEW ARTICLES - Nanoscale Germanium MOS Dielectrics -- Part I: Germanium OxynitridesChui, C.O. et al. | 2006
- 1509
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REVIEW ARTICLES - Nanoscale Germanium MOS Dielectrics -- Part II: High-k Gate DielectricsChui, C.O. et al. | 2006
- 1509
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Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectricsChi On Chui, / Kim, H. / Chi, D. / McIntyre, P.C. / Saraswat, K.C. et al. | 2006
- 1509
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Nanoscale Germanium MOS Dielectrics - Part II: High-Gate DielectricsChui, C. O. / Kim, H. / Chi, D. / Mcintyre, P. C. / Saraswat, K. C. et al. | 2006
- 1517
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Compound Semiconductor Devices - Origin of Improved RF Performance of AlGaN-GaN MOSHFETs Compared to HFETsMarso, M. et al. | 2006
- 1517
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Origin of Improved RF Performacne of AIGaN/GaN MOSHFETs Compared to HFETsMarso, M. / Heidelberger, G. / Indlekofer, K. M. / Bernat, J. / Fox, A. / Kordo, P. / Luth, H. et al. | 2006
- 1517
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Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETsMarso, M. / Heidelberger, G. / Indlekofer, K.M. / Bernat, J. / Fox, A. / Kordos, P. / Luth, H. et al. | 2006
- 1524
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Compound Semiconductor Devices - Experimental and Theorctical Examination of Orientation Effect on Piezoelectric Charge at Gate Periphery in AlGaN-GaN HFETsIshida, H. et al. | 2006
- 1524
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Experimental and theoretical examination of orientation effect on piezoelectric charge at gate periphery in AlGaN/GaN HFETsIshida, H. / Murata, T. / Ishii, M. / Hirose, Y. / Uemoto, Y. / Tanaka, T. / Ueda, D. et al. | 2006
- 1524
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Experimental and Theoretical Examination of Orientation Effect on Piezoelectric Charge at Gate Periphery in AIGaN/GaN HFETsIshida, H. / Murata, T. / Ishii, M. / Hirose, Y. / Uemoto, Y. / Tanaka, T. / Ueda, D. et al. | 2006
- 1530
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A 6-F/sup 2/ bit cell design based on one transistor and two uneven magnetic tunnel junctions structure and low power design for MRAMChien-Chung Hung, / Ming-Jer Kao, / Young-Shying Chen, / Yung-Hung Wang, / Yuan-Jen Lee, / Wei-Chuan Chen, / Lin, W.-C. / Kuei-Hung Shen, / Kuo-Lung Chen, / Shiuh Chao, et al. | 2006
- 1530
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A 6-$rmF^2&Bit Cell Design Based on One Transistor and Two Uneven Magnetic Tunnel Junctions Strucutre and Low Power Design for MRAMHung, C.-C. / Kao, M.-J. / Chen, Y.-S. / Wang, Y.-H. / Lee, Y.-J. / Chen, W.-C. / Lin, W.-C. / Shen, K.-H. / Chen, K.-L. / Chao, S. et al. | 2006
- 1530
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Nanoelectronics - A 6-F2 Bit Cell Design Based on One Transistor and Two Uneven Magnetic Tunnel Junctions Structure and Low Power Design for MRAMHung, C.-C. et al. | 2006
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Optoelectronics, Displays, and Imaging - Characteristics of an Address Discharge Time Lag in Terms of a Wall Voltage in an AC PDPShin, B.J. et al. | 2006
- 1543
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Simple model for quantum-dot semiconductor optical amplifiers using artificial neural networksAbabneh, J.I. / Qasaimeh, O. et al. | 2006
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Optoelectronics, Displays, and Imaging - Simple Model for Quantum-Dot Semiconductor Optical Amplifiers Using Artificial Neural NetworksAbabneh, J.I. et al. | 2006
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Optoelectronics, Displays, and Imaging - Vertically Integrated Amorphous Silicon Color Sensor ArraysKnipp, D. et al. | 2006
- 1551
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Vertically integrated amorphous silicon color sensor arraysKnipp, D. / Street, R.A. / Stiebig, H. / Krause, M. / Jeng-Ping Lu, / Ready, S. / Ho, J. et al. | 2006
- 1559
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Reducing power consumption in liquid-crystal displaysRuckmongathan, T.N. / Govind, M. / Deepak, G. et al. | 2006
- 1559
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Optoelectronics, Displays, and Imaging - Reducing Power Consumption in Liquid-Crystal DisplaysRuckmongathan, T.N. et al. | 2006
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Optoelectronics, Displays, and Imaging - Degradation Behavior of Avalanche Photodiodes With a Mesa Structure Observed Using a Digital OBIC MonitorTakeshita, T. et al. | 2006
- 1567
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Degradation behavior of avalanche photodiodes with a mesa structure observed using a digital OBIC monitorTakeshita, T. / Hirota, Y. / Ishibashi, T. / Muramoto, Y. / Ito, T. / Tohmori, Y. / Ito, H. et al. | 2006
- 1567
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Degradation Behaviour of Avalanche Photodiodes With a Mesa Structure Observed Using a Digital OBIC MonitorTakeshita, T. / Hirota, Y. / Ishibashi, T. / Muramoto, Y. / Ito, T. / Tohmori, Y. / Ito, H. et al. | 2006
- 1575
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Finite-element modeling of liquid-crystal hydrodynamics with a variable degree of orderJames, R. / Willman, E. / FernandezFernandez, F.A. / Day, S.E. et al. | 2006
- 1575
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Optoelectronics, Displays, and Imaging - Finite-Element Modeling of Liquid-Crystal Hydrodynamics With a Variable Degree of OrderJames, R. et al. | 2006
- 1583
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Reliability - On the Generation and Recovery of Interface Traps in MOSFETs Subjected to NBTI, FN, and HCI StressMahapatra, S. et al. | 2006
- 1583
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On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stressMahapatra, S. / Saha, D. / Varghese, D. / Kumar, P.B. et al. | 2006
- 1593
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Comparison Study of Tunneling Models for Schottky Field Effect Transistors and the Effects of Schottky Barrier LoweringVega, R. A. et al. | 2006
- 1593
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Comparison study of tunneling models for Schottky field effect transistors and the effect of Schottky barrier loweringVega, R.A. et al. | 2006
- 1593
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Silicon Devices - Comparison Study of Tunneling Models for Schottky Field Effect Transistors and the Effect of Schottky Barrier LoweringVega, R.A. et al. | 2006
- 1601
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Application of the 1-D silicon limit to varactorsvan Noort, W.D. / Deixler, P. / Havens, R.J. / Rodriguez, A. et al. | 2006
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- 1608
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- 1608
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Silicon Devices - Lateral Nonuniformity of Effective Oxide Charges in MOS Capacitors With Al2O3 Gate DielectricsHuang, S.-W. et al. | 2006
- 1608
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Lateral nonuniformity of effective oxide charges in MOS capacitors with Al/sub 2/O/sub 3/ gate dielectricsSzu-Wei Huang, / Jenn-Gwo Hwu, et al. | 2006
- 1615
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- 1615
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- 1623
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Silicon Devices - Modeling and Simulation of a Nanoscale Three-Region Tri-Material Gate Stack (TRIMGAS) MOSFET for Improved Carrier Transport Efficiency and Reduced Hot-Electron EffectsGoel, K. et al. | 2006
- 1623
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Modeling and simulation of a nanoscale three-region tri-material gate stack (TRIMGAS) MOSFET for improved carrier transport efficiency and reduced hot-electron effectsGoel, K. / Saxena, M. / Gupta, M. / Gupta, R.S. et al. | 2006
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Silicon Devices - On the Physical Understanding of the kT-Layer Concept in Quasi-Ballistic Regime of Transport in Nanoscale DevicesClerc, R. et al. | 2006
- 1634
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On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devicesClerc, R. / Palestri, P. / Selmi, L. et al. | 2006
- 1634
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On the Physical Understanding of the kT-Layer in Quasi-Ballistic Regime of Transport in Nanoscale DevicesClerc, R. / Palestri, R. / Selmi, L. et al. | 2006
- 1641
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Silicon Devices - Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETsHueting, R.J.E. et al. | 2006
- 1641
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Analysis of the subthreshold current of pocket or halo-implanted nMOSFETsHueting, R.J.E. / Anco Heringa, et al. | 2006
- 1647
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Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyondEneman, G. / Verheyen, P. / Rooyackers, R. / Nouri, F. / Washington, L. / Schreutelkamp, R. / Moroz, V. / Smith, L. / An De Keersgieter, / Jurczak, M. et al. | 2006
- 1647
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Scalability of the Si~1-x Ge~xSource/DrainTechnology for the 45-nm Technology Node and BeyondEneman, G. / Verheyen, P. / Rooyackers, R. / Nouri, F. / Washington, L. / Schreutelkamp, R. / Moroz, V. / Smith, L. / De Keersgieter, A. / Jurczak, M. et al. | 2006
- 1647
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Silicon Devices - Scalability of the Si1-xGex Source-Drain Technology for the 45-nm Technology Node and BeyondEneman, G. et al. | 2006
- 1657
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Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctionsRagnarsson, L.-A. / Severi, S. / Trojman, L. / Johnson, K.D. / Brunco, D.P. / Aoulaiche, M. / Houssa, M. / Kauerauf, T. / Degraeve, R. / Delabie, A. et al. | 2006
- 1657
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Silicon Devices - Electrical Characteristics of 8-°A EOT HfO2-TaN Low Thermal-Budget n-Channel FETs With Solid-Phase Epitaxially Regrown JunctionsRagnarsson, L.-°A et al. | 2006
- 1657
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Electrical Characteristics of 8-rmAA$EOTHfO~2TaN$Low Thermal-Budget n-Channel FETs With Solid-Phase Epitaxially Regrown JunctionsRagnarsson, L. / Severi, S. / Trojman, L. / Johnson, K. D. / Brunco, D. P. / Aoulaiche, M. / Houssa, M. / Kauerauf, T. / Degraeve, R. / Delabie, A. et al. | 2006
- 1669
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On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETsKnoch, J. / Min Zhang, / Mantl, S. / Appenzeller, J. et al. | 2006
- 1669
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Silicon Devices - On the Performance of Single-Gated Ultrathin-Body SOI Schottky-Barrier MOSFETsKnoch, J. et al. | 2006
- 1675
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Analysis and modeling of liquid-crystal tunable capacitorsChang, C.A. / Chih-Cheng Cheng, / Yeh, J.A. et al. | 2006
- 1675
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Solid-State Device Phenomena - Analysis and Modeling of Liquid-Crystal Tunable CapacitorsChang, C.A. et al. | 2006
- 1683
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Theory of electrothermal behavior of bipolar transistors: part III-impact ionizationRinaldi, N. / d'Alessandro, V. et al. | 2006
- 1683
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Solid-State Device Phenomena - Theory of Electrothermal Behavior of Bipolar Transistors: Part III -- Impact IonizationRinaldi, N. et al. | 2006
- 1683
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Theory of Electrothermal Behaviour of Bipolar Transistors: Part III - Impact IonizationRinaldi, N. / D�Alessandro, V. et al. | 2006
- 1698
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Electrothermal model for an SOI-based LIGBTGamage, S.S.H.U. / Pathirana, V. / Udrea, F. et al. | 2006
- 1698
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Solid-State Power and High Voltage - Electrothermal Model for an SOI-Based LIGBTGamage, S.S.H.U. et al. | 2006
- 1705
-
Solid-State Power and High Voltage - Impact of Substratc-Surface Potential on the Performance of RF Power LDMOSFETs on High-Resistivity SOIScholvin, J. et al. | 2006
- 1705
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Impact of substrate-surface potential on the performance of RF power LDMOSFETs on high-resistivity SOIScholvin, J. / Fiorenza, J.G. / del Alamo, J.A. et al. | 2006
- 1712
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Thermal behavior of a superjunction MOSFET in a high-current conductionRoig, J. / Stefanov, E. / Morancho, F. et al. | 2006
- 1712
-
Solid-State Power and High Voltage - Thermal Behavior of a Superjunction MOSFET in a High-Current ConductionRoig, J. et al. | 2006
- 1721
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Frequency and phase modulation performance of an injection-locked CW magnetronTahir, I. / Dexter, A. / Carter, R. et al. | 2006
- 1721
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- 1730
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Impact of strain-temperature stress on ultrathin oxideChia-Wei Tung, / Yi-Lin Yang, / Jenn-Gwo Hwu, et al. | 2006
- 1736
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BRIEFS - Impact of Strain-Temperature Stress on Ultrathin OxideTung, C.-W. et al. | 2006
- 1737
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BRIEFS - Measurement of Low-Noise Column Readout Circuits for CMOS Image SensorsKawai, N. et al. | 2006
- 1737
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Measurement of low-noise column readout circuits for CMOS image sensorsKawai, N. / Kawahito, S. et al. | 2006
- 1740
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BRIEFS - Analysis of Lateral IGBT With a Variation in Lateral Doping Drift Region in Junction Isolation TechnologyTadikonda, R. et al. | 2006
- 1740
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Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technologyTadikonda, R. / Hardikar, S. / Green, D.W. / Sweet, M. / Narayanan, E.M.S. et al. | 2006
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Corrections to “An Investigation of Low-Frequency Noise in Complementary SiGe HBTs”Zhao, E. / Krithivasan, R. / Sutton, A.K. / Jin, Z. / Cressler, J.D. / El-Kareh, B. / Balster, S. / Yasuda, H. et al. | 2006
- 1745
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COMMENTS AND CORRECTIONS - Corrections to "An Investigation of Low-Frequency Noise in Complementary SiGe HBTs"Zhao, E. et al. | 2006
- 1746
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ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Spintronics| 2006
- 1746
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Special issue on spintronics| 2006
- 1748
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ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY on Automotive Electronic Device Reliability| 2006
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ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Simulation and Modeling of Nanoelectronics Devices| 2006
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Eighth IEEE International Vacuum Electronics Conference| 2006
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Table of contents| 2006
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IEEE Transactions on Electron Devices publication information| 2006
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IEEE Transactions on Electron Devices information for authors| 2006