MOVPE growth study of BxGa(1−x)N on GaN template substrate (Englisch)
- Neue Suche nach: Gautier, S.
- Neue Suche nach: Sartel, C.
- Neue Suche nach: Ould Saad Hamady, S.
- Neue Suche nach: Maloufi, N.
- Neue Suche nach: Martin, J.
- Neue Suche nach: Jomard, F.
- Neue Suche nach: Ougazzaden, A.
- Neue Suche nach: Gautier, S.
- Neue Suche nach: Sartel, C.
- Neue Suche nach: Ould Saad Hamady, S.
- Neue Suche nach: Maloufi, N.
- Neue Suche nach: Martin, J.
- Neue Suche nach: Jomard, F.
- Neue Suche nach: Ougazzaden, A.
In:
SUPERLATTICES AND MICROSTRUCTURES
;
40
, 4-6
;
233-238
;
2006
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:MOVPE growth study of BxGa(1−x)N on GaN template substrate
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Beteiligte:Gautier, S. ( Autor:in ) / Sartel, C. ( Autor:in ) / Ould Saad Hamady, S. ( Autor:in ) / Maloufi, N. ( Autor:in ) / Martin, J. ( Autor:in ) / Jomard, F. ( Autor:in ) / Ougazzaden, A. ( Autor:in )
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Erschienen in:SUPERLATTICES AND MICROSTRUCTURES ; 40, 4-6 ; 233-238
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Verlag:
- Neue Suche nach: Elsevier Science B.V., Amsterdam
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Erscheinungsdatum:01.01.2006
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Format / Umfang:6 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 620.11299
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 620.11299 -
Datenquelle:
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Inhaltsverzeichnis – Band 40, Ausgabe 4-6
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- 191
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PrefaceFreitas, J. / Gil, B. / Monemar, B. / Mueller, G. / Rupp, R. et al. | 2006
- 195
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Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspectiveMüller, St.G. / Brady, M.F. / Burk, A.A. / Hobgood, H.McD. / Jenny, J.R. / Leonard, R.T. / Malta, D.P. / Powell, A.R. / Sumakeris, J.J. / Tsvetkov, V.F. et al. | 2006
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Improvement of cubic silicon carbide crystals grown from solutionEid, J. / Santailler, J.L. / Ferrand, B. / Basset, A. / Passero, A. / Lewandowska, R. / Balloud, C. / Camassel, J. et al. | 2006
- 205
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Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactorHemmingsson, C. / Paskov, P.P. / Pozina, G. / Heuken, M. / Schineller, B. / Monemar, B. et al. | 2006
- 214
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High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxyHiroki, M. / Yokoyama, H. / Watanabe, N. / Kobayashi, T. et al. | 2006
- 219
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Integration of GaN thin films to SiO2–Si(100) substrates by laser lift-off and wafer fusion methodArokiaraj, J. / Soh, C.B. / Wang, X.C. / Tripathy, S. / Chua, S.J. et al. | 2006
- 225
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Epitaxial growth of 4H–SiC{0001} and reduction of deep levelsKimoto, T. / Wada, K. / Danno, K. et al. | 2006
- 233
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MOVPE growth study of BxGa(1−x)N on GaN template substrateGautier, S. / Sartel, C. / Ould Saad Hamady, S. / Maloufi, N. / Martin, J. / Jomard, F. / Ougazzaden, A. et al. | 2006
- 239
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Plasma-assisted molecular beam epitaxy of wurtzite GaMnN displaying ferromagnetism assessed by means of X-ray magnetic circular dichroismSarigiannidou, E. / Monroy, E. / Bellet-Amalric, E. / Mariette, H. / Galera, R.M. / Cibert, J. / Wilhelm, F. / Rogalev, A. et al. | 2006
- 246
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Structural properties of 10 μm thick InN grown on sapphire (0001)Dimakis, E. / Domagala, J.Z. / Delimitis, A. / Komninou, Ph. / Adikimenakis, A. / Iliopoulos, E. / Georgakilas, A. et al. | 2006
- 253
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Optical properties of nonpolar -plane GaN layersPaskov, P.P. / Paskova, T. / Monemar, B. / Figge, S. / Hommel, D. / Haskell, B.A. / Fini, P.T. / Speck, J.S. / Nakamura, S. et al. | 2006
- 253
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Optical properties of nonpolar Formula Not Shown -plane GaN layersPaskov, P. P. / Paskova, T. / Monemar, B. / Figge, S. / Hommel, D. / Haskell, B. A. / Fini, P. T. / Speck, J. S. / Nakamura, S. et al. | 2006
- 262
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GaN/AlN quantum dot photodetectors at 1.3–1.5 μmDoyennette, L. / Vardi, A. / Guillot, F. / Nevou, L. / Tchernycheva, M. / Lupu, A. / Colombelli, R. / Bahir, G. / Monroy, E. / Julien, F.H. et al. | 2006
- 268
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DLTS study of n-type GaN grown by MOCVD on GaN substratesTokuda, Y. / Matsuoka, Y. / Ueda, H. / Ishiguro, O. / Soejima, N. / Kachi, T. et al. | 2006
- 274
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Time- and frequency-domain measurements of carrier lifetimes in GaN epilayersTamulaitis, G. / Mickevičius, J. / Vitta, P. / Žukauskas, A. / Shur, M.S. / Fareed, Q. / Gaska, R. et al. | 2006
- 279
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Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methodsWeyher, J.L. et al. | 2006
- 289
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Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxyLebedev, V. / Morales, F.M. / Cimalla, V. / Lozano, J.G. / González, D. / Himmerlich, M. / Krischok, S. / Schaefer, J.A. / Ambacher, O. et al. | 2006
- 295
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AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxyJoblot, S. / Cordier, Y. / Semond, F. / Chenot, S. / Vennéguès, P. / Tottereau, O. / Lorenzini, P. / Massies, J. et al. | 2006
- 300
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The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layerGloux, F. / Ruterana, P. / Wojtowicz, T. / Lorenz, K. / Alves, E. et al. | 2006
- 306
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Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengthsGuillot, F. / Amstatt, B. / Bellet-Amalric, E. / Monroy, E. / Nevou, L. / Doyennette, L. / Julien, F.H. / Dang, Le Si et al. | 2006
- 313
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Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaNIliopoulos, E. / Zervos, M. / Adikimenakis, A. / Tsagaraki, K. / Georgakilas, A. et al. | 2006
- 320
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Defect reduction in sublimation grown SiC bulk crystalsSchmitt, Erwin / Straubinger, Thomas / Rasp, Michael / Weber, Arnd-Dietrich et al. | 2006
- 328
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Titanium related luminescence in SiCHenry, A. / Janzén, E. et al. | 2006
- 332
-
Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on Formula Not Shown -SiC substratesNishikawa, A. / Kumakura, K. / Akasaka, T. / Makimoto, T. et al. | 2006
- 332
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Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on -SiC substratesNishikawa, Atsushi / Kumakura, Kazuhide / Akasaka, Tetsuya / Makimoto, Toshiki et al. | 2006
- 338
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Thermal conductivity, dislocation density and GaN device designMion, C. / Muth, J.F. / Preble, Edward A. / Hanser, Drew et al. | 2006
- 343
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Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopyAlvarez, J. / Houzé, F. / Kleider, J.P. / Liao, M.Y. / Koide, Y. et al. | 2006
- 350
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New results on diffusion lengths measurements in wide bandgap semiconductors, obtained from steady state photocarrier gratings (SSPG)Niehus, M. / Schwarz, R. et al. | 2006
- 359
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Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiCCordier, Y. / Chenot, S. / Laügt, M. / Tottereau, O. / Joblot, S. / Semond, F. / Massies, J. / Di Cioccio, L. / Moriceau, H. et al. | 2006
- 363
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Technology aspects of GaN-based diodes for high-field operationMutamba, Kabula / Yilmazoglu, Oktay / Sydlo, Cezary / Mir, Mostafa / Hubbard, Seth / Zhao, G. / Daumiller, Ingo / Pavlidis, Dimitris et al. | 2006
- 369
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Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AlInN on an N-face GaN surfaceRizzi, F. / Edwards, P.R. / Watson, I.M. / Martin, R.W. et al. | 2006
- 373
-
Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111)Roccaforte, F. / Iucolano, F. / Alberti, A. / Giannazzo, F. / Puglisi, V. / Bongiorno, C. / Di Franco, S. / Raineri, V. et al. | 2006
- 380
-
Commercial SiC device processing: Status and requirements with respect to SiC based power devicesTreu, M. / Rupp, R. / Blaschitz, P. / Hilsenbeck, J. et al. | 2006
- 388
-
Deep SiC etching with RIELazar, M. / Vang, H. / Brosselard, P. / Raynaud, C. / Cremillieu, P. / Leclercq, J.-L. / Descamps, A. / Scharnholz, S. / Planson, D. et al. | 2006
- 393
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Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO2 /Si and SiO2 /SiC interfacesTallarida, Massimo / Sohal, Rakesh / Schmeisser, Dieter et al. | 2006
- 399
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Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodesBluet, J.M. / Ziane, D. / Guillot, G. / Tournier, D. / Brosselard, P. / Montserrat, J. / Godignon, P. et al. | 2006
- 405
-
High-temperature failure of GaN LEDs related with passivationMeneghini, Matteo / Trevisanello, Lorenzo / Meneghesso, Gaudenzio / Zanoni, Enrico / Rossi, Francesca / Pavesi, Maura / Zehnder, Ulrich / Strauss, Uwe et al. | 2006
- 412
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New developments for nitride unipolar devices at 1.3–1.5 μm wavelengthsNevou, L. / Tchernycheva, M. / Doyennette, L. / Julien, F.H. / Warde, E. / Colombelli, R. / Guillot, F. / Leconte, S. / Monroy, E. / Remmele, T. et al. | 2006
- 418
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MBE growth of nitride-based photovoltaic intersubband detectorsMonroy, E. / Guillot, F. / Leconte, S. / Bellet-Amalric, E. / Baumann, E. / Giorgetta, F. / Hofstetter, D. / Nevou, L. / Tchernycheva, M. / Doyennette, L. et al. | 2006
- 426
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GaN micromachined FBAR structures for microwave applicationsMüller, A. / Neculoiu, D. / Vasilache, D. / Dascalu, D. / Konstantinidis, G. / Kosopoulos, A. / Adikimenakis, A. / Georgakilas, A. / Mutamba, K. / Sydlo, C. et al. | 2006
- 432
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Study of the structural and optical properties of GaN/AlN quantum dot superlatticesSkoulidis, N. / Vargiamidis, V. / Polatoglou, H.M. et al. | 2006
- 440
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UV-Raman scattering study of lattice recovery by thermal annealing of Eu+ -implanted GaN layersPastor, D. / Hernández, S. / Cuscó, R. / Artús, L. / Martin, R.W. / O’Donnell, K.P. / Briot, O. / Lorenz, K. / Alves, E. et al. | 2006
- 445
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Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xNRoqan, I.S. / Lorenz, K. / O’Donnell, K.P. / Trager-Cowan, C. / Martin, R.W. / Watson, I.M. / Alves, E. et al. | 2006
- 452
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Optical studies on a coherent InGaN/GaN layerCorreia, M.R. / Pereira, S. / Alves, E. / Arnaudov, B. et al. | 2006
- 458
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Energetics of the 30∘ Shockley partial dislocation in wurtzite GaNBelabbas, I. / Dimitrakopulos, G. / Kioseoglou, J. / Béré, A. / Chen, J. / Komninou, Ph. / Ruterana, P. / Nouet, G. et al. | 2006
- 464
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Stillinger–Weber parameters for In and N atomsLei, H.P. / Chen, J. / Petit, S. / Ruterana, P. / Jiang, X.Y. / Nouet, G. et al. | 2006
- 470
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Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layersYu, C.L. / Chang, S.J. / Chang, P.C. / Lin, Y.C. / Lee, C.T. et al. | 2006
- 476
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Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogenSartel, C. / Gautier, S. / Ould Saad Hamady, S. / Maloufi, N. / Martin, J. / Sirenko, A. / Ougazzaden, A. et al. | 2006
- 483
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Morphological properties of AlN and GaN grown by MOVPE on porous Si(111) and Si(111) substratesChaaben, N. / Yahyaoui, J. / Christophersen, M. / Boufaden, T. / El Jani, B. et al. | 2006
- 490
-
Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growthHalidou, I. / Benzarti, Z. / Bougrioua, Z. / Boufaden, T. / El Jani, B. et al. | 2006
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Thermodynamic analysis of Si doping in GaNHalidou, I. / Benzarti, Z. / Boufaden, T. / El Jani, B. et al. | 2006
- 501
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The role of a ZnO buffer layer in the growth of ZnO thin film on Al2O3 substrateKang, Hong Seong / Pang, Seong Sik / Kim, Jae Won / Kim, Gun Hee / Kim, Jong Hoon / Lee, Sang Yeol / Li, Y. / Wang, H. / Jia, Q.X. et al. | 2006
- 507
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Vertical electron transport study in GaN/AlN/GaN heterostructuresLeconte, S. / Monroy, E. / Gérard, J.-M. et al. | 2006
- 513
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Photoluminescence, cathodoluminescence, and reflectance study of AlN layers and AlN single crystalsPrinz, G.M. / Ladenburger, A. / Feneberg, M. / Schirra, M. / Thapa, S.B. / Bickermann, M. / Epelbaum, B.M. / Scholz, F. / Thonke, K. / Sauer, R. et al. | 2006
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Hydrogen-free CVD diamond synthesisHiraga, Shinji / Shimada, Shouhei / Takagi, Yoshiki / Kuribayashi, Kiyoshi / Hayashi, Tsuyoshi et al. | 2006
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Diamond particles synthesized with graphite spark method in two secondsHirai, Takayuki / Kawai, Toru / Takagi, Yoshiki / Shimizu, Osamu / Suda, Yoshihisa / Kanno, Yoshinori / Kuribayashi, Kiyoshi / Hayashi, Tsuyosi et al. | 2006
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Mn-doped GaN/AlN heterojunction for spintronic devicesDebernardi, Alberto et al. | 2006
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Optical properties of GaN nanocrystals embedded into silica matricesPodhorodecki, A. / Nyk, M. / Kudrawiec, R. / Misiewicz, J. / Pivin, J.C. / Strek, W. et al. | 2006
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Optical and structural studies in Eu-implanted AlN filmsPeres, M. / Cruz, A. / Soares, M.J. / Neves, A.J. / Monteiro, T. / Lorenz, K. / Alves, E. et al. | 2006
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Surface confinement of the InN-rich phase in thick InGaN on GaNKim, Taek-Seung / Kim, Sang-Woo / Kim, Han-Ki / Lee, Ji-Myon et al. | 2006
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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- applicationFissel, A. / Czernohorsky, M. / Osten, H.J. et al. | 2006
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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- Formula Not Shown applicationFissel, A. / Czernohorsky, M. / Osten, H. J. et al. | 2006
- 557
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Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescencePauc, N. / Phillips, M.R. / Aimez, V. / Drouin, D. et al. | 2006
- 562
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Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMTHa, Min-Woo / Lee, Seung-Chul / Kim, Soo-Seong / Yun, Chong-Man / Han, Min-Koo et al. | 2006
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New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructureHa, Min-Woo / Lee, Seung-Chul / Choi, Young-Hwan / Kim, Soo-Seong / Yun, Chong-Man / Han, Min-Koo et al. | 2006
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Energetics of dopant atoms in subsurface positions of diamond semiconductorMiyazaki, Takehide / Kato, Hiromitsu / Ri, Sung-Gi / Ogura, Masahiko / Tokuda, Norio / Yamasaki, Satoshi et al. | 2006
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A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devicesBen Salah, Tarek / Garrab, Hatem / Ghedira, Sami / Allard, Bruno / Risaletto, Damien / Raynaud, Christophe / Besbes, Kamel / Morel, Hervé et al. | 2006
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Semiempirical tight-binding modelling of III-N-based heterostructuresGürel, H. Hakan / Akinci, Özden / Ünlü, Hilmi et al. | 2006
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Hydrogenated amorphous silicon nitride deposited by DC magnetron sputteringMokeddem, K. / Aoucher, M. / Smail, T. et al. | 2006
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Modeling of trap-assisted tunneling in AlGaN/GaN heterostructure field effect transistors with different Al mole fractionsAsgari, A. / Karamad, M. / Kalafi, M. et al. | 2006
- 607
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Atomically flat GaMnN by diffusion of Mn into GaN( Formula Not Shown )Dumont, J. / Kowalski, B. J. / Pietrzyk, M. / Seldrum, T. / Houssiau, L. / Douhard, B. / Grzegory, I. / Porowski, S. / Sporken, R. et al. | 2006
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Atomically flat GaMnN by diffusion of Mn into GaN()Dumont, J. / Kowalski, B.J. / Pietrzyk, M. / Seldrum, T. / Houssiau, L. / Douhard, B. / Grzegory, I. / Porowski, S. / Sporken, R. et al. | 2006
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Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometryPezoldt, J. / Zgheib, Ch. / Lebedev, V. / Masri, P. / Ambacher, O. et al. | 2006
- 619
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Bias sensitive spectral sensitivity in double Formula Not Shown -SiC:H pin structuresLouro, P. / Fernandes, M. / Fantoni, A. / Lavareda, G. / Nunes de Carvalho, C. / Vieira, M. et al. | 2006
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Ni–Al ohmic contact to p-type 4H-SiCVang, H. / Lazar, M. / Brosselard, P. / Raynaud, C. / Cremillieu, P. / Leclercq, J.-L. / Bluet, J.-M. / Scharnholz, S. / Planson, D. et al. | 2006
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Radiation source dependence of device performance degradation for 4H-SiC MESFETsOhyama, H. / Takakura, K. / Uemura, K. / Shigaki, K. / Kudou, T. / Matsumoto, T. / Arai, M. / Kuboyama, S. / Kamezawa, C. / Simoen, E. et al. | 2006
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5 μm thick 3C-SiC layers grown on Ge-modified Si(100) substratesZgheib, Ch. / Nassar, E. / Hamad, M. / Nader, R. / Masri, P. / Pezoldt, J. / Ferro, G. et al. | 2006
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